CN100416793C - Method for improving isolation effect of apparatus in shallow groove isolation techniques - Google Patents
Method for improving isolation effect of apparatus in shallow groove isolation techniques Download PDFInfo
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- CN100416793C CN100416793C CNB2005101107045A CN200510110704A CN100416793C CN 100416793 C CN100416793 C CN 100416793C CN B2005101107045 A CNB2005101107045 A CN B2005101107045A CN 200510110704 A CN200510110704 A CN 200510110704A CN 100416793 C CN100416793 C CN 100416793C
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Abstract
This invention discloses one method to improve isolation effect applied in shallow groove tank isolation process, which comprises the following steps: before etching for isolation on isolation tank, injecting oxidation; annealing to make oxygen and silicon react to ensure the silicon oxide on STI bottom after etching.
Description
Technical field
The present invention relates to a kind of method of improving the device isolation effect, especially be applied to improve in the shallow ditch groove separation process method of device isolation effect.
Background technology
In the modem semi-conductor devices manufacturing process, shallow trench isolation is from (Shallow Trench lsolation, abbreviation STI) technology plays very enormous function, STI technology is by dig out a trapezoidal groove wide at the top and narrow at the bottom on silicon substrate, insert silica then therein, thereby play isolation effect.For the following technology of 0.18um, STI technology can play the good isolation effect when saving the design space.
But along with the continuous development of modern semiconductors manufacturing process, STI technology also exposes a lot of deficiencies, especially on its isolation effect, often can't satisfy design and producer's requirement fully.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method that is applied to improve in the shallow ditch groove separation process device isolation effect, and it can further improve the device isolation effect.
In order to solve above technical problem, the present invention proposes a kind of method that is applied to improve in the shallow ditch groove separation process device isolation effect, it had increased following steps successively before shallow groove isolation etching: oxygen injects, and adopts the repeatedly injection mode of different-energy; Annealing, make oxygen and pasc reaction and guarantee after the STI bottom position production silica of STI etching after finishing.
The present invention has increased following steps successively by before the STI etching: oxygen injects; Annealing, make oxygen and pasc reaction and guarantee after the STI bottom position production silica of STI etching after finishing, improve the isolation effect of STI with this.Inject by oxidation repeatedly, can increase in the STI bottom and one deck oxidation separator, further increase isolation effect.So, under the situation of identical STI width, strengthen isolation effect, also can under the situation that guarantees the same separation effect, reduce the STI width as far as possible, save area.
Description of drawings
Below in conjunction with the drawings and specific embodiments, the present invention is further elaborated.
Fig. 1 is a process flow diagram of the present invention:
Fig. 2 is an oxygen injection technology schematic diagram of the present invention;
Fig. 3 is that annealing process of the present invention forms the silicon nitride process schematic diagram
Fig. 4 is a STI etching technics schematic diagram of the present invention;
Fig. 5 is a resulting devices organigram of the present invention.
Embodiment
The present invention will be described below in conjunction with Fig. 1-5.At first carry out doing oxygen and inject (see figure 2) in the position that forms STI, anneal then, make oxygen and pasc reaction and guarantee after the STI bottom position of STI etching after finishing produce the silica (see figure 3), carry out STI etching (see figure 4) subsequently, pass through bed course oxide layer (LinearOxide) growth then, form resulting devices of the present invention at last, it is constructed as shown in Figure 5.
For concrete different manufacturing process, it should be noted that the position that the preceding oxygen of etching injects should reach near the STI bottom, the silica that is formed by annealing after making occupies bottom section after the STI etching, to guarantee to reach the desirable effect of patent, according to the different process requirement, in conjunction with the variation of the STI degree of depth, the degree of depth that oxygen injects should corresponding the adjusting.As the better isolation effect of needs, can increase the number of times that oxygen injects as one sees fit, promptly repeatedly carry out oxygen and inject with different-energy, be enough to occupy the STI bottom section with the silica that forms after guaranteeing, to reach better isolation effect.
Inject by current oxidation, can increase in the STI bottom and one deck oxidation separator, further increase isolation effect.So, under the situation of identical STI width, strengthen isolation effect, also can under the situation that guarantees the same separation effect, reduce the STI width as far as possible, save area.
Claims (3)
1. method that is applied to improve in the shallow ditch groove separation process device isolation effect, described shallow ditch groove separation process flow process may further comprise the steps at least successively, shallow groove isolation etching, the bed course oxide layer growth, it is characterized in that, before shallow groove isolation etching, increased following steps: oxygen injects, and described oxygen injects the repeatedly injection mode that adopts different-energy; Annealing makes oxygen and pasc reaction and generates silica at shallow trench isolation from the bottom.
2. the method that is applied to improve in the shallow ditch groove separation process device isolation effect as claimed in claim 1 is characterized in that, the position that described oxygen injects should be in the position of shallow groove isolation etching.
3. the method that is applied to improve in the shallow ditch groove separation process device isolation effect as claimed in claim 1 is characterized in that, described oxygen inject should arrive shallow trench isolation from the bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101107045A CN100416793C (en) | 2005-11-24 | 2005-11-24 | Method for improving isolation effect of apparatus in shallow groove isolation techniques |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101107045A CN100416793C (en) | 2005-11-24 | 2005-11-24 | Method for improving isolation effect of apparatus in shallow groove isolation techniques |
Publications (2)
| Publication Number | Publication Date |
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| CN1971872A CN1971872A (en) | 2007-05-30 |
| CN100416793C true CN100416793C (en) | 2008-09-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005101107045A Active CN100416793C (en) | 2005-11-24 | 2005-11-24 | Method for improving isolation effect of apparatus in shallow groove isolation techniques |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1204148A (en) * | 1997-06-26 | 1999-01-06 | 西门子公司 | Integrated circuit devices including shallow trench isolation |
| CN1260586A (en) * | 1999-01-11 | 2000-07-19 | 日本电气株式会社 | Method for forming slot on semiconductor device |
| US20030045079A1 (en) * | 2001-09-05 | 2003-03-06 | Chang Hun Han | Method for manufacturing mask ROM |
| CN1442895A (en) * | 2002-03-06 | 2003-09-17 | 矽统科技股份有限公司 | Mathod of forming shallow slot isolating ragion |
| JP2004031963A (en) * | 2002-06-25 | 2004-01-29 | Siliconix Inc | Selective oxidation with self-alignment in trench by ion implantation |
-
2005
- 2005-11-24 CN CNB2005101107045A patent/CN100416793C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1204148A (en) * | 1997-06-26 | 1999-01-06 | 西门子公司 | Integrated circuit devices including shallow trench isolation |
| CN1260586A (en) * | 1999-01-11 | 2000-07-19 | 日本电气株式会社 | Method for forming slot on semiconductor device |
| US20030045079A1 (en) * | 2001-09-05 | 2003-03-06 | Chang Hun Han | Method for manufacturing mask ROM |
| CN1442895A (en) * | 2002-03-06 | 2003-09-17 | 矽统科技股份有限公司 | Mathod of forming shallow slot isolating ragion |
| JP2004031963A (en) * | 2002-06-25 | 2004-01-29 | Siliconix Inc | Selective oxidation with self-alignment in trench by ion implantation |
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| Publication number | Publication date |
|---|---|
| CN1971872A (en) | 2007-05-30 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |