CN100414789C - Semiconductor laser pumping intracavity and frequency folding cavity resonator laser - Google Patents
Semiconductor laser pumping intracavity and frequency folding cavity resonator laser Download PDFInfo
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- CN100414789C CN100414789C CNB2004100109176A CN200410010917A CN100414789C CN 100414789 C CN100414789 C CN 100414789C CN B2004100109176 A CNB2004100109176 A CN B2004100109176A CN 200410010917 A CN200410010917 A CN 200410010917A CN 100414789 C CN100414789 C CN 100414789C
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Abstract
The present invention belongs to semiconductor laser pumping coessential laser device which is composed of a semiconductor laser device 3-1, an optical coupling system 3-2, a reflection cavity mirror 3-3, a gain medium 3-4, a sum frequency crystal 3-5, an output coupling mirror 3-6 and a reflection cavity mirror 3-7. The gain medium 3-4 generates base frequency lasers with a wavelength lambada1 and a wavelength lambada2 by the pumping action of the semiconductor laser device 3-1; the base frequency lasers generate sum frequency lasers with a wavelength lambada3 which is different from the wavelength lambada1 and the wavelength lambada2 in the sum frequency crystal 3-5 through nonlinear sum frequency. In a folding laser resonant cavity, two arms form two girdles, wherein one girdle is matched with a pumping light mode to obtain large pumping efficiency, and the other smaller girdle obtains high sum frequency efficiency in the sum frequency crystal. In the present invention, the base frequency lasers pass through the sum frequency crystal in two directions to generate sum frequency lasers to be output, and then, the utilization ratio of the sum frequency lasers is improved. The present invention is a semiconductor laser pumping intracavitary sum frequency laser device with a folding resonant cavity, which has the advantages of simple structure, high efficiency and bidirectional output of sum frequency lasers.
Description
Technical field:
The invention belongs to semiconductor laser pumping Solid State Laser technical field, relate to a kind of new technology of the ld pumping solid state laser that obtains and export frequently.
Background technology:
Semiconductor laser focuses on or near the subsides is coupled in the gain medium from end face as pump light source, can well mate with the fundamental frequency optical mode that excites in the chamber.By nonlinear optics mixing effects such as intracavity frequency doubling and frequency, difference frequencies, can obtain other long wavelength laser.Ld pumping solid state laser is compared with traditional lamp pump laser, has the beam quality that high conversion efficiency is become reconciled.The main application of mixing laser device is an intracavity frequency doubling laser in the semiconductor laser pumping chamber at present.This technology has been widely used in the product of semiconductor laser pumping intracavity frequency doubling red, green and blue light laser.
Have different wavelength with two fundamental frequency light that participate in frequency translation in the frequency laser, select to determine the nonlinear crystal of cutting, can obtain and wavelength output frequently.Fig. 1 be have two branch arms and a common arm compound resonant cavity with the frequency laser structure.This structure is by semiconductor laser 1-1 and 1-8, optical coupling system 1-2 and 1-9, reflecting cavity mirror 1-3 and 1-10, gain media 1-4 and 1-11 and bundle mirror 1-12 and crystal 1-5 and output coupling mirror 1-6 form frequently; Two independent arms and public arm are formed sub resonant cavity respectively, produce two different wavelength, place nonlinear crystal in public arm, by new with acquisition frequently for frequently wavelength output.U.S. Patent No. 5.802.086 proposes the structure of a straight cavate resonance-cavity laser of employing shown in Figure 2.This structure is by semiconductor laser 2-1, optical coupling system 2-2, reflecting cavity mirror 2-3, gain media 2-4 and frequency crystal 2-5, output coupling mirror 2-6 forms, adopt a gain medium,, obtain new wavelength output by in the chamber and frequently with two above transition wavelengths.
The detailed content of invention:
In order to solve that background technology adopts composite resonant cavity as shown in Figure 1 and frequency laser, complex structure, debug difficulty, less stable; The straight cavate resonant cavity of employing shown in Figure 2 and frequency laser, obtained with only unidirectional output frequently, the low problem of efficient, the objective of the invention is to propose in a kind of semiconductor laser pumping chamber of folded resonator, efficient height and the two-way output of light frequently simple in structure and frequency laser.
Principle of the present invention and structure are made up of semiconductor laser 1, optical coupling system, first reflecting cavity mirror, gain media and frequency crystal, output coupling mirror and second reflecting cavity mirror as shown in Figure 3; By first reflecting cavity mirror, gain media with crystal, output coupling mirror and second reflecting cavity mirror are formed in the chamber and frequency, folded resonator frequently; Resonant cavity is made up of two arms, an arm is arranged by first reflecting cavity mirror, gain media and output coupling mirror, another arm is pressed output coupling mirror and crystal and the arrangement of second reflecting cavity mirror frequently, and two arms are folding at the output coupling mirror place, and angle folding is between 10 ° to 90 °; Gain media and frequency crystal and output coupling mirror are placed in the laserresonator, and selecting the different laser transition spectral line of gain media is wavelength X
1And wavelength X
2The wavelength X that gain media produces
1And wavelength X
2Basic frequency beam is reflexed to by output coupling mirror and frequently in the crystal, by with the nonlinear interaction of frequency crystal, wavelength is λ
1And wavelength X
2Fundamental frequency light by being λ with frequently producing wavelength
3First and light frequently, wavelength is λ
3After reflecting by second reflecting cavity mirror, first and frequency light enters and the frequency crystal; Non-switched part wavelength X
2And wavelength X
1Fundamental frequency light reflex to by second reflecting cavity mirror and frequently in the crystal, producing wavelength by the nonlinear interaction with the frequency crystal is λ
3Second portion and light frequently, wavelength X
3Output to outside the folded resonator by output coupling mirror after two parts and the optical superposition frequently, obtain a wavelength X
3And frequency laser.
Be coated with the deielectric-coating of pump light anti-reflection near the surface of optical coupling system at first reflecting cavity mirror; Is plane or concave surface at first reflecting cavity mirror near the surface of gain media, and on the plane or the concave surface preparation to pump light anti-reflection and wavelength X
2And wavelength X
1The high anti-multilayer dielectric film of fundamental frequency light.
Two logical light faces at gain media prepare wavelength X
2And wavelength X
1The deielectric-coating of fundamental frequency light anti-reflection.
The high reflecting surface of fundamental frequency light at output coupling mirror prepares wavelength X
2And wavelength X
1Fundamental frequency light high anti-, wavelength is λ
3With the anti-reflection multilayer dielectric film of frequency light, in the preparation of the another side of output coupling mirror to wavelength X
3With the anti-reflection film of frequency light.
Prepare wavelength X at two logical light faces with the frequency crystal
2And wavelength X
1Fundamental frequency light and wavelength X
3With the deielectric-coating of frequency light three-wavelength anti-reflection.
Reflecting surface at second reflecting cavity mirror prepares wavelength X
2, wavelength X
1Fundamental frequency light and wavelength X
3With the high anti-deielectric-coating of frequency light three-wavelength.
First reflecting cavity mirror is directly prepared the pump light plane of incidence at gain media.
With frequency fold resonator laser, form in the semiconductor laser pumping chamber as shown in Figure 5 by semiconductor laser, first reflecting cavity mirror, gain media and frequency crystal, output coupling mirror and second reflecting cavity mirror; By first reflecting cavity mirror, gain media and crystal frequently, the output coupling mirror and second reflecting cavity mirror form in the chamber and frequency, folded resonator; Resonant cavity is made up of two arms, an arm is arranged by first reflecting cavity mirror, gain media and output coupling mirror, another arm is pressed output coupling mirror and crystal and the arrangement of second reflecting cavity mirror frequently, and two arms are folding at the output coupling mirror place, and angle folding is between 10 ° to 90 °; First reflecting cavity mirror directly prepares the pump light plane of incidence at gain media, and near subsides of the pump light of semiconductor laser is coupled in the gain media; Gain media and frequency crystal and output coupling mirror are placed in the laserresonator, and selecting the different laser transition spectral line of gain media is wavelength X
1And wavelength X
2The wavelength X that gain media produces
1And wavelength X
2Basic frequency beam is reflexed to by output coupling mirror and frequently in the crystal, by with the nonlinear interaction of frequency crystal, wavelength is λ
1And wavelength X
2Fundamental frequency light by being λ with frequently producing wavelength
3First and light frequently, wavelength is λ
3After reflecting by second reflecting cavity mirror, first and frequency light enters and the frequency crystal; Non-switched part wavelength X
2And wavelength X
1Fundamental frequency light reflex to by second reflecting cavity mirror and frequently in the crystal, producing wavelength by the nonlinear interaction with the frequency crystal is λ
3Second portion and light frequently, wavelength X
3Output to outside the folded resonator by output coupling mirror after two parts and the optical superposition frequently, obtain a wavelength X
3And frequency laser.
With the frequency crystal on the preparation to wavelength X
2, wavelength X
1Fundamental frequency light and wavelength X
3With the high anti-deielectric-coating of frequency light three-wavelength.
Wavelength X wherein
1, wavelength X
2And wavelength X
3Satisfy with frequency and concern 1/ λ
3=1/ λ
2+ 1/ λ
1Press wavelength X with the frequency crystal
2And wavelength X
1The direction cutting that is complementary with position frequently, make wavelength X
2And wavelength X
1With the frequency crystal in conllinear satisfy the position when propagating and be complementary and concern n
3/ λ
3=n
2/ λ
2+ n
1/ λ
1, n wherein
3, n
2And n
1It is respectively wavelength X
3, wavelength X
2And wavelength X
1With the frequency crystal in refractive index when propagating.
The film system preparation of first reflecting cavity mirror requires wavelength X
1And wavelength X
2Two wavelength have high reflectance, and the pumping wavelength that the while noise spectra of semiconductor lasers is sent has high permeability; The film system preparation of output coupling mirror requires λ
1And wavelength X
2The high reflectance that on the direction of laser incidence angle θ, has of fundamental frequency light, simultaneously to frequency light wavelength λ
3Has high permeability; The film system preparation of second reflecting cavity mirror requires wavelength X
1, wavelength X
2And wavelength X
3Has high reflectance.
During laser works of the present invention: the semiconductor laser as pump light source sends pump light, is coupled in the gain medium by optical coupling part; The pumping light power that sends when semiconductor laser surpasses resonant cavity to wavelength X
2And wavelength X
1During the threshold power that vibrates in resonant cavity, gain medium has produced wavelength X
2And wavelength X
1Deng the fundamental frequency light of two different wave lengths, between first reflecting cavity mirror and second reflecting cavity mirror, propagate vibration, in gain medium, amplify; When fundamental frequency light by and frequently during crystal, by nonlinear optics with interact frequently, produced and be different from wavelength X
2And wavelength X
1The 3rd wavelength be λ
3With frequency light.The wavelength of a direction propagation is λ
3With frequency light by after second reflecting cavity mirror reflection once more by and crystal frequently, the wavelength of propagating with other direction is λ
3With frequency light combination after, output to outside the laserresonator by output coupling mirror.And the structure of this resonant cavity is the folded resonator of Fig. 3.
Because the present invention adopts the folded resonator structure, the combined type resonant cavity that has solved background technology shown in Figure 1 brings complex structure, debugs difficulty, and the problem of less stable makes that this invention is simple in structure, debugs easily, and is good as product stability.
Because the present invention adopts the structure of folded resonator, solved that background technology shown in Figure 2 adopts straight cavate resonant cavity and frequency laser, obtained with only unidirectional output frequently, inefficient problem.The present invention as shown in Figure 3 have two advantages with frequency laser: since on two arms of refrative cavity, can have respectively with a tight waist, through the cavity resonator structure design, one of them is girdled the waist in the arm at gain medium place, the pump light pattern optimization of matching of basic mode size and incident obtains maximum pumping efficiency; Make another arm girdle the waist with the frequency crystal in, and can the focusing length that keeps laser beam with and crystal length coupling and laser power density is no more than and frequently under the situation of crystal and its surface optical film damage threshold frequently, effectively reduce the basic frequency beam waist, improve the fundamental frequency optical power density, obtain high and frequency efficient; To be that fundamental frequency light is two-way all can pass through the unidirectional output of output coupling mirror by what crystal produced with frequency light to another advantage of this structure, increased the utilance with frequency light.For this reason, the present invention can obtain simple in structure, efficient is high, in folded resonator and the semiconductor laser pumping chamber two-way output of frequency light and frequency laser.
Description of drawings:
Fig. 1 is laser pumping of combined type resonant cavity semiconductor and the frequency laser structure chart that background technology has two sub resonant cavities
Fig. 2 is in the straight cavate resonant cavity semiconductor of the background technology laser pump cavity and the frequency laser structure chart
Fig. 3 is a structural representation of the present invention
Fig. 4 is in the semiconductor laser pumping chamber of the direct preparation of plane of incidence reflecting cavity mirror on gain medium and frequency 593.5nm, and 589nm and 501nm laser adopt embodiments of the invention four.
Fig. 5 is that plane of incidence reflecting cavity mirror directly prepares on gain medium, closely pastes in the semiconductor laser pumping chamber that is coupled and frequency 593.5nm, the 589nm and the 501nm laser employing embodiment of the invention five.
Fig. 6 be reflecting cavity mirror directly preparation with the frequency crystal on the semiconductor laser pumping chamber in and 593.5nm frequently, 589nm and 501nm laser adopt embodiments of the invention six.
Embodiment:
Structure of the present invention comprises semiconductor laser 3-1, optical coupling system 3-2, the first reflecting cavity mirror 3-3, gain media 3-4 and frequency crystal 3-5, the output coupling mirror 3-6 and the second reflecting cavity mirror 3-7.
Embodiments of the invention one, similar with Fig. 3: wherein semiconductor laser 3-1 can adopt semiconductor laser array or adopt semiconductor laser, optical coupling system 3-2 is usually by spherical mirror, aspherical mirror, cylindrical mirror, GRIN Lens, optical fiber, composition such as prism or binary optical lenses, resonant cavity is made up of two arms, an arm is by the first reflecting cavity mirror 3-3, gain media 3-4 and output coupling mirror 3-6 arrange, another arm is pressed output coupling mirror 3-6, arrange with the frequency crystal 3-5 and the second reflecting cavity mirror 3-7, two arms are folding at the output coupling mirror place, and its angle folding can be selected 10 °; All greater than 99.5%, the transmitance of wavelength 808nm is greater than 80% multilayer dielectric film to the reflectivity of wavelength 1342nm and 1064nm for the preparation of the concave surface of the first reflecting cavity mirror 3-3.The preparation of the plane of the first speculum 3-3 to the transmitance of wavelength 808nm greater than 99% anti-reflection film.Gain media 3-4 adopts Nd:YVO
4Laser crystal, its laser transition wavelength is 1342nm and 1064nm, pairing energy level transition is respectively
4F
3/2Arrive
4I
13/2With
4F
3/2Arrive
4I
11/2Nd:YVO
4Two logical light face preparations of laser crystal are to 1342nm and 1064nm dual wavelength anti-reflection film, and transmitance is greater than 99%.With frequency crystal 3-5 be LBO, KTP or other nonlinear crystal, wherein LBO and KTP press cutting with frequency I class phase matched and II class phase matched direction of wavelength 1342nm and wavelength 1064nm respectively, two logical light faces of this crystal all prepare the three-wavelength anti-reflection film to 1342nm, 1064nm and 593.5nm, and transmitance is greater than 99%.The preparation of the concave surface of output coupling mirror 3-6 to the reflectivity of wavelength 1342nm and 1064nm all greater than 99.5%, to the transmitance of wavelength 593.5nm greater than 80% multilayer dielectric film.The preparation of the plane of output coupling mirror 3-6 to the transmitance of wavelength 593.5nm greater than 99% anti-reflection film.The second reflecting cavity mirror 3-7 is concave mirror or level crossing, and a plane preparation of the concave surface of its concave mirror or level crossing has the multilayer dielectric film of high reflectance to wavelength 1342nm, 1064nm and 593.5nm etc.Wherein to the reflectivity of wavelength 1342nm and 1064nm greater than 99.5%, to the reflectivity of 593.5nm greater than 95%.
When semiconductor laser or semiconductor laser array 3-1 work, along with the increase of pump power, at Nd:YVO
4The interior fundamental frequency light that produces two wavelength of 1342nm and 1064nm vibrates in resonant cavity, during by LBO or KTP, produces the 593.5nm yellow laser, is exported by output coupling mirror 3-6.
Embodiments of the invention two are similar with embodiment one, and angle folding can be selected 10 °; The preparation of the plane of the first reflecting cavity mirror 3-3 to the transmitance of 808nm greater than 99% anti-reflection film.The preparation of the concave surface of reflecting cavity mirror 3-3 to the reflectivity of wavelength 1319nm and 1064nm all greater than 99.5%, to the transmitance of wavelength 808nm greater than 80% multilayer dielectric film.Gain media 3-4 is adopted as the Nd:YAG laser crystal, and its laser transition wavelength is 1319nm and 1064nm, and pairing energy level transition is respectively
4F
3/2Arrive
4I
13/2With
4F
3/2Arrive
4I
11/2Two logical light face preparations of Nd:YAG laser crystal are to 1319nm and 1064nm dual wavelength anti-reflection film, and transmitance is greater than 99%.With frequency crystal 3-5 be LBO or KTP nonlinear crystal, wherein LBO and KTP respectively by the I class of wavelength 1319nm and wavelength 1064nm and frequently the position be complementary and II class and the position direction cutting that is complementary frequently, prepare 1319nm, 1064nm and 589nm three-wavelength anti-reflection film with two logical light faces of frequency crystal 3-5, transmitance is greater than 99%.The preparation of the planar film of output coupling mirror 3-6 system requires transmitance to wavelength 589nm greater than 99%.The recessed face mask series preparation of output coupling mirror 3-6 requires reflectivity to wavelength 1319nm and 1064nm all greater than 99.5%, to the transmitance of wavelength 589nm greater than 80%.The film system preparation of reflecting cavity mirror 3-7 requires the high-reflecting film to three wavelength such as wavelength 1319nm, 1064nm and 589nm.Wherein to the reflectivity of wavelength 1319nm and 1064nm greater than 99.5%, to the reflectivity of 589nm greater than 95%.
When semiconductor laser or semiconductor laser array 3-1 work, the yellow laser of 589nm is exported by output coupling mirror 3-6.
Embodiments of the invention three are similar with embodiment one, and angle folding can be selected 10 °; The preparation of the concave surface of reflecting cavity mirror 3-3 to the reflectivity of wavelength 946nm and 1064nm all greater than 99.5%, to the transmitance of wavelength 808nm greater than 80% multilayer dielectric film.The preparation of the plane of speculum 3-3 to the transmitance of 808nm greater than 99% anti-reflection film.It is 946nm and 1064nm that laser crystal 3-4 adopts the laser transition wavelength of Nd:YAG laser crystal, and pairing energy level transition is respectively
4F
3/2Arrive
4I
9/2With
4F
3/2Arrive
4I
11/2Two logical light face preparations of Nd:YAG laser crystal are to 946nm and 1064nm dual wavelength anti-reflection film, and transmitance is greater than 99%.With frequency crystal 3-5 be LBO or KTP nonlinear crystal, wherein LBO and KTP respectively by the I class of wavelength 946nm and wavelength 1064nm and frequently the position be complementary and II class and the position direction cutting that is complementary frequently, prepare 946nm, 1064nm and 501nm three-wavelength anti-reflection film with two logical light faces of frequency crystal 3-5, transmitance is greater than 99%.The recessed face mask series preparation of output coupling mirror 3-6 requires reflectivity to wavelength 946nm and 1064nm all greater than 99.5%, to the transmitance of wavelength 501nm greater than 80%.The preparation of the planar film of output coupling mirror 3-6 system requires transmitance to wavelength 501nm greater than 99%.The film system preparation of reflecting cavity mirror 3-7 requires the high-reflecting film to three wavelength such as wavelength 946nm, 1064nm and 501nm.Wherein to the reflectivity of wavelength 946nm and 1064nm greater than 99.5%, to the reflectivity of 501nm greater than 95%.
When semiconductor laser or semiconductor laser array 3-1 work, the celadon laser of 501nm is exported by output coupling mirror 3-6.
The embodiment of the invention four as shown in Figure 4, with embodiment one, embodiment two and embodiment three are similar, angle folding can be selected 45 °; It is the pump light plane of incidence that the first reflecting cavity mirror 4-3 directly is coated on gain medium 4-4.Corresponding to embodiment one, Nd:YVO
4The film of gain medium 4-4 system requires: the pump light plane of incidence to the reflectivity of wavelength 1342nm and 1064nm all greater than 99.5%, to the transmitance of wavelength 808nm greater than 80%; The another side preparation is to 1342nm and 1064nm dual wavelength anti-reflection film, and transmitance is greater than 99%.Corresponding to embodiment two, the film of Nd:YAG gain medium 4-4 system require be: the pump light plane of incidence to the reflectivity of wavelength 1319nm and wavelength 1064nm all greater than 99.5%, to the transmitance of wavelength 808nm greater than 80%; Another side is to 1319nm and 1064nm dual wavelength anti-reflection film, and transmitance is greater than 99%.Corresponding to embodiment three, the film of Nd:YAG gain medium 4-4 system require be: the pump light plane of incidence to the reflectivity of wavelength 946nm and wavelength 1064nm all greater than 99.5%, to the transmitance of wavelength 808nm greater than 80%; Another side is to 946nm and 1064nm dual wavelength anti-reflection film, and transmitance is greater than 99%.
The embodiment of the invention five as shown in Figure 5, and is similar with embodiment three, is that optical coupling system is removed, and the luminous point that makes semiconductor laser directly is coupled near subsides of pump light in the gain medium 5-4 near gain medium 5-4.Wherein the luminous point of semiconductor laser to the right plane of gain medium 5-4 or the distance of sphere less than 6 microns.Angle folding can be selected 90 °.
The embodiment of the invention six as shown in Figure 6, with embodiment one, embodiment two and embodiment three are similar, just the second speculum 6-7 directly prepare with frequency crystal 6-5 on, directly prepare the highly reflecting films of wavelength 1342nm, 1064nm and 593.5nm (corresponding to embodiment one) or wavelength 1319nm, 1064nm and 589nm three wavelength such as (corresponding to embodiment two) or the highly reflecting films of wavelength 946nm, 1064nm and 501nm three wavelength such as (corresponding to embodiment three) at the high reflecting surface with frequency crystal 6-5, the film of another side is constant.Angle folding can be selected 30 °.
Claims (9)
1. fold resonator laser in the semiconductor laser pumping chamber and frequently is by semiconductor laser (3-1), optical coupling system (3-2), first reflecting cavity mirror (3-3), gain media (3-4) with crystal (3-5), output coupling mirror (3-6) and second reflecting cavity mirror (3-7) are formed frequently; It is characterized in that: by first reflecting cavity mirror (3-3), gain media (3-4) with crystal (3-5), output coupling mirror (3-6) and second reflecting cavity mirror (3-7) are formed in the chamber and frequency, folded resonator frequently; Resonant cavity is made up of two arms, an arm is arranged by first reflecting cavity mirror (3-3), gain media (3-4) and output coupling mirror (3-6), another arm is pressed output coupling mirror (3-6) and crystal (3-5) and second reflecting cavity mirror (3-7) arrangement frequently, two arms are located to fold at output coupling mirror (3-6), and angle folding is between 10 ° to 90 °; Gain media (3-4) and frequency crystal (3-5) and output coupling mirror (3-6) are placed in the laserresonator, and selecting the different laser transition spectral line of gain media (3-4) is wavelength X
1And wavelength X
2The wavelength X that gain media (3-4) produces
1And wavelength X
2Basic frequency beam is reflexed to by output coupling mirror (3-6) and frequently in the crystal (3-5); By with the nonlinear interaction of frequency crystal (3-5), wavelength is λ
1And wavelength X
2Fundamental frequency light by being λ with frequently producing wavelength
3First and light frequently, wavelength is λ
3After reflecting by second reflecting cavity mirror (3-7), first and frequency light enters and frequency crystal (3-5); Non-switched part wavelength X
2And wavelength X
1Fundamental frequency light reflex to by second reflecting cavity mirror (3-7) and frequently in the crystal (3-5), producing wavelength by the nonlinear interaction with frequency crystal (3-5) is λ
3Second portion and light frequently, wavelength X
3Output to outside the folded resonator by output coupling mirror (3-6) after two parts and the optical superposition frequently, obtain a wavelength X
3And frequency laser.
2. with frequency fold resonator laser, it is characterized in that: the deielectric-coating that is coated with the pump light anti-reflection at first reflecting cavity mirror (3-3) near the surface of optical coupling system (3-2) in the semiconductor laser pumping according to claim 1 chamber; Is plane or concave surface at first reflecting cavity mirror (3-3) near the surface of gain media (3-4), and on the plane or the concave surface preparation to pump light anti-reflection and wavelength X
2And wavelength X
1The high anti-multilayer dielectric film of fundamental frequency light.
3. with frequency fold resonator laser, it is characterized in that in the semiconductor laser pumping according to claim 1 chamber: two logical light faces at gain media (3-4) prepare wavelength X
2And wavelength X
1The deielectric-coating of fundamental frequency light anti-reflection.
4. with frequency fold resonator laser, it is characterized in that in the semiconductor laser pumping according to claim 1 chamber: the high reflecting surface of fundamental frequency light at output coupling mirror (3-6) prepares wavelength X
2And wavelength X
1Fundamental frequency light high anti-, wavelength is λ
3With the anti-reflection multilayer dielectric film of frequency light, in the preparation of the another side of output coupling mirror (3-6) to wavelength X
3With the anti-reflection film of frequency light.
5. with frequency fold resonator laser, it is characterized in that in the semiconductor laser pumping according to claim 1 chamber: prepare wavelength X at two logical light faces with frequency crystal (3-5)
2And wavelength X
1Fundamental frequency light and wavelength X
3With the deielectric-coating of frequency light three-wavelength anti-reflection.
6. with frequency fold resonator laser, it is characterized in that: the reflecting surface at second reflecting cavity mirror (3-7) prepares wavelength X in the semiconductor laser pumping according to claim 1 chamber
2, wavelength X
1Fundamental frequency light and wavelength X
3With the high anti-deielectric-coating of frequency light three-wavelength.
7. with frequency fold resonator laser, it is characterized in that in the semiconductor laser pumping according to claim 1 chamber: the pump light plane of incidence of the direct preparation of first reflecting cavity mirror (4-3) at gain media (4-4).
8. fold resonator laser in the semiconductor laser pumping chamber and frequently is by semiconductor laser (5-1), first reflecting cavity mirror (5-3), gain media (5-4) with crystal (5-5), output coupling mirror (5-6) and second reflecting cavity mirror (5-7) are formed frequently; It is characterized in that: by first reflecting cavity mirror (5-3), gain media (5-4) and crystal (5-5) frequently, output coupling mirror (5-6) and second reflecting cavity mirror (5-7) are formed in the chamber and frequency, folded resonator; Resonant cavity is made up of two arms, an arm is arranged by first reflecting cavity mirror (5-3), gain media (5-4) and output coupling mirror (5-6), another arm is pressed output coupling mirror (5-6) and crystal (5-5) and second reflecting cavity mirror (5-7) arrangement frequently, two arms are located to fold at output coupling mirror (5-6), and angle folding is between 10 ° to 90 °; First reflecting cavity mirror (5-3) directly prepares the pump light plane of incidence at gain media (5-4), and near subsides of the pump light of semiconductor laser (5-1) is coupled in the gain media (5-4); Gain media (5-4) and frequency crystal (5-5) and output coupling mirror (5-6) are placed in the laserresonator, and selecting the different laser transition spectral line of gain media (5-4) is wavelength X
1And wavelength X
2The wavelength X that gain media (5-4) produces
1And wavelength X
2Basic frequency beam is reflexed to by output coupling mirror (5-6) and frequently in the crystal (5-5), by with the nonlinear interaction of frequency crystal (5-5), wavelength is λ
1And wavelength X
2Fundamental frequency light by being λ with frequently producing wavelength
3First and light frequently, wavelength is λ
3After reflecting by second reflecting cavity mirror (5-7), first and frequency light enters and frequency crystal (5-5); Non-switched part wavelength X
2And wavelength X
1Fundamental frequency light reflex to by second reflecting cavity mirror (5-7) and frequently in the crystal (5-5), producing wavelength by the nonlinear interaction with frequency crystal (5-5) is λ
3Second portion and light frequently, wavelength X
3Output to outside the folded resonator by output coupling mirror (5-6) after two parts and the optical superposition frequently, obtain a wavelength X
3And frequency laser.
9. according to fold resonator laser in claim 1 or the 8 described semiconductor laser pumping chambeies and frequently, it is characterized in that: going up preparation to wavelength X with frequency crystal (6-5)
2, wavelength X
1Fundamental frequency light and wavelength X
3With the high anti-deielectric-coating of frequency light three-wavelength.
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| CN1707878A (en) | 2005-12-14 |
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Assignee: Changchun New Industries Photoelectric Technology Co., Ltd. Assignor: Changchun Inst. of Optics and Fine Mechanics and Physics, Chinese Academy of Sci Contract record no.: 2010220000025 Denomination of invention: Semiconductor laser pumping intracavity and frequency folding cavity resonator laser Granted publication date: 20080827 License type: Exclusive License Open date: 20051214 Record date: 20100527 |
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