CN100414437C - Sun sensor optical mask and manufacturing method therefor - Google Patents
Sun sensor optical mask and manufacturing method therefor Download PDFInfo
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- CN100414437C CN100414437C CNB2007101003948A CN200710100394A CN100414437C CN 100414437 C CN100414437 C CN 100414437C CN B2007101003948 A CNB2007101003948 A CN B2007101003948A CN 200710100394 A CN200710100394 A CN 200710100394A CN 100414437 C CN100414437 C CN 100414437C
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- shading layer
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Abstract
This invention relates to one aviation position measurement control system sensor and relates to one solar sensitive optical mask film and its process method, wherein the mask film is composed of mask film base slice, filter layer film coated on mask base slice and light resistance film on filter layer; the mask film process method comprises the following steps: a, processing mask film base slice; b, coating optical layer film; c, coating resistance optical film; d, coating light etch glue; e, exposure; f eroding; g, clearing and drying.
Description
Technical field
The present invention relates to the attitude sensor technology in the spacecraft attitude Measurement and Control System, relate in particular to a kind of sun sensor optical mask and manufacture method thereof.
Background technology
Spacecraft is called attitude in the orientation in space, has one to be called attitude control in the Control work of spacecraft.The control system of spacecraft normally is made up of sensor, controller and topworks's three parts, wherein sensor is in order to measure some absolute or relative physical quantity, attitude sensor then is used for measuring relative angle position or the angular velocity of spacecraft body coordinate system with respect to certain frame of reference, to determine the attitude of spacecraft.Sun sensor is at the most widely used class sensor of aviation field, all is equipped with sun sensor on the satellite usually.Sun sensor is to come really by the position of the body coordinate system of measuring the relative spacecraft of the sun
Decide the attitude of satellite.
The formation of sun sensor mainly comprises three aspects: optical head, Sensor section and signal processing.Wherein optical head can adopt modes such as slit, aperture, lens, prism.In order to make sunray be received and realize the function of attitude measurement before the light sensor of sun sensor light hole or light penetrating slit need be set by the light sensor of sun sensor.In order to guarantee measuring accuracy, light hole or light penetrating slit are all smaller, generally about tens microns to 500 microns.
The light hole or the printing opacity of sun sensor are sewed with two kinds of method for makings at present, a kind of is to adopt micromachined to make light-transmission metallic hole or light penetrating slit, another kind is to be that the basis makes optical mask with MEMS (micro electro mechanical system) (MEMS, Micro ElectroMechanical Systems) production technology.Light-transmission metallic hole or the light penetrating slit processing cost is low, technology is simple, but because there are certain geometric thickness in light-transmission metallic hole or light penetrating slit, its light spot image generation shape distortion causes attitude measurement accuracy low when the sunshine oblique incidence.MEMS technology is not to utilize the direct interaction of machining tool and material, its restriction micro three-dimensional structure dimensional accuracy be not the size of machining tool itself, but the resolution of imaging system, the wavelength of light wave for example, the diameter of light beam etc.
At present, MEMS technology is the unique technology that can make the sub-micrometer precision figure in substrate, is mainly used to make the deposition of thin film sacrificial layer in mask, the bulk silicon technological cavity burn into surface treatment and corrosion etc.Therefore, the optical mask that adopts photoetching technique to make sun sensor is current domestic and international research focus, jet promotion laboratory (JPL) as US National Aeronautics and Space Administration (NASA), its optical mask manufacture craft is: chromium plating on silicon chip, gold-plated on the chromium layer again, the corresponding figure of etching on gold layer at last.In this technology, silicon chip can see through near infrared light, and the chromium layer has played the effect of bonding silicon chip and gold layer on the one hand, also reaches the effect that decay to some extent sees through light by changing its thickness on the other hand.But when the sunshine oblique incidence optics mask, light passes through the physical length lengthening of chromium layer to the chromium layer, sees through light intensity and also diminishes thereupon as the optical attenuation layer, and this situation is more serious along with the increase of sunshine oblique incidence angle.The gold layer can not absorb the light that is reflected by photo sensitive device as shading layer, thereby forms the reflection veiling glare.These factors are unfavorable for that sun sensor improves field range and overcomes the veiling glare influence.In addition, its silicon chip that adopts all is difficult to adapt to the abominable mechanical environment of Aero-Space, as: strong vibration, impact and acceleration etc.
Summary of the invention
In view of this, fundamental purpose of the present invention is the defective at existing optical mask, provides the spectral-transmission favtor of a kind of precision height, reliability height, filter layer not change, can adapt to the optical mask and the manufacture method thereof of abominable mechanical environment with the solar incident angle degree.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of sun sensor optical mask includes photomask substrate, is coated on lip-deep optical filtering tunic system of photomask substrate and is coated on the shading layer film system that the optical filtering tunic is fastened, and photomask substrate is made by white stone; Optical filtering tunic system is by the alternately laminated multilayer dielectric film system that forms of silicon and silicon dioxide, and described optical filtering tunic is that every layer thickness was 1/4th of selected operation wavelength during intermediary's plasma membrane was; Shading layer film system is that described shading layer film is to be provided with light hole by the alternately laminated multilayer dielectric film system that forms of chromium and gold.Wherein, the thickness of described photomask substrate is 500 μ m～800 μ m.
In the such scheme, described optical filtering tunic is to be to begin from the side near photomask substrate, and successively by silicon and the alternately laminated multilayer dielectric film system that constitutes of silicon dioxide, the number of plies that this optical filtering tunic is is 30 layers from inside to outside; Described shading layer film system be from be close to the filter layer film be the side beginning from inside to outside successively with the multilayer dielectric film system of chromium and golden alternately laminated formation, the number of plies of this shading layer film system is 10 layers.
Wherein, described optical filtering tunic is that characteristic is a high-pass type optical filtering tunic system, and it is 0 to wavelength less than the optical transmission rate of 950nm, to wavelength greater than the optical transmission rate of 1150nm more than 80%; Described shading layer film system is 0 to wavelength less than the optical transmission rate of 1150nm, and the light hole that the shading layer film is fastened is one or more hole or seam, and aperture or gap width be 95 μ m～105 μ m, and adjacent hole or slit spacing are more than 700 μ m.
A kind of sun sensor optical mask manufacture method comprises the steps:
A, employing thickness are the white stone substrate of 500 μ m, and with its upper and lower surface polishing, make photomask substrate;
B, plate optical filtering tunic system with rotary process on photomask substrate on KW-4 type sol evenning machine, 30 layer dielectrics that this film system is made up of silicon and silicon dioxide are that every layer thickness is 1/4th of a described mask operation wavelength;
C, fasten the method plating shading layer film system that adopts evaporation at the optical filtering tunic, 10 layer dielectrics that this shading layer film system is made up of gold and silicon are that the thickness of every layer of medium is 1/4th of described mask operation wavelength;
D, fasten at the shading layer film and to be coated with photoresist;
E, will have the mask mother matrix of one or more apertures or seam pattern to place the top of photoresist, then under the ultraviolet ray irradiation to resist exposure;
F, with mask be placed on prepared, the solution component is bottled hydrochloric acid (HCl) and bottled nitric acid (HNO
3) volume ratio is that the resistance luminescent material that the shading layer film that the photoresist tapping is exposed is fastened erodes in three to one the corrosive liquid, thereby forms light hole.
G, mask put into distilled water and absolute ethyl alcohol successively and cleans after, be placed in the baking oven Celsius 95 ℃ and dry.
Therefore, adopt sun sensor optical mask of the present invention and manufacture method thereof, have the following advantages and characteristics:
1), based on MEMS technology, the size and dimension precision height of formed light hole.
2), shading layer is very thin, light spot image amorphism distortion during the oblique incidence of sunshine light.
3), the shading layer multilayer dielectric film system that adopts chromium and gold to form, effectively the absorbing wavelength scope is at the light of 950nm～1100nm, can make no reflection events veiling glare on the light-sensitive surface of sun sensor light activated element.
4), have the optical attenuation layer in the film system, when the sunshine oblique incidence, seeing through light intensity does not have significant change.
5), adopt white stone as photomask substrate, can adapt to abominable mechanical environment.
Description of drawings
Fig. 1 (a) is the structural representation of mask of the present invention; Fig. 1 (b) is the vertical view of Fig. 1 (a);
Fig. 2 is the quantum efficiency figure of sun sensor light activated element spectral response;
Fig. 3 is solar radiation relative distribution plan of its spectral energy on Earth's orbit;
Fig. 4 is the filter layer spectral-transmission favtor design curve synoptic diagram of mask of the present invention;
Fig. 5 is the realization flow synoptic diagram of mask manufacture method of the present invention;
Fig. 6 is the perspective view of mask of the present invention;
Fig. 7 is the spectral-transmission favtor J curve effectJ figure of mask actual measurement of the present invention;
Fig. 8 is the experimental provision structural representation of mask simulation test of the present invention;
Formed light spot image when Fig. 9 (a) is just penetrating for mask of the present invention is applied to sun sensor light;
Formed light spot image when Fig. 9 (b) is applied to the oblique fire of sun sensor light for mask of the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiments of the present invention are described in detail.
Fig. 1 (a) is the structural representation of mask of the present invention; Fig. 1 (b) is the vertical view of Fig. 1 (a).
Shown in Fig. 1 (a), this mask is 2 and to be coated on the optical filtering tunic be that shading layer film on 2 is 3 to form by a slice photomask substrate 1, a lip-deep optical filtering tunic being coated on photomask substrate 1.
Wherein, photomask substrate 1 is by the white stone manufacturing.White stone has another name called sapphire, belongs to a kind of in the nephrite, and its hardness is 6.5, and mean intensity is 3617kg/cm
2, it has obdurability through the crushing strength experimental verification, is that photomask substrate can adapt to abominable mechanical environment so select it.The thickness of photomask substrate 1 of the present invention is 0.4mm～0.6mm, be that cylindric finished product white stone rod cutting about 12mm forms by diameter, and bottom surface is all handled through glossing on the substrate of cutting back gained.According to actual conditions, if the shape difference of white stone rod, the photomask substrate shape after the cutting is also different thereupon.
The optical filtering tunic is 2 to have adopted by the alternately laminated multilayer dielectric film system that constitutes of silicon and silicon dioxide.This multilayered medium film structure can be controlled the spectral-transmission characteristics of filter layer flexibly by the thickness of controlling each layer medium; according to the optical filtering tunic is the difference of selected operation wavelength; every layer thickness is 1/4th of this operation wavelength in the dielectric coating series; and near a side of the photomask substrate beginning, this optical filtering tunic system from inside to outside successively by silicon, silicon dioxide is alternately laminated constitutes.The operating wavelength range of mask is 950nm～1100nm in the present embodiment, through experiment confirm, the multilayer dielectric film of filter layer is number of plies best results when being 30 layers in the present embodiment, and this filter layer is a high-pass type optical filtering tunic system, the performance characteristics of this optical filtering tunic system is: is 0 for wavelength less than the optical transmission rate of 950nm, to wavelength greater than the optical transmission rate of 1150nm more than 80%.
The shading layer film is 3 to be to be made of the multilayer dielectric film system that chromium and gold are laminated.Specifically: this shading layer film system is the side beginning from adjacent filter layer film, and by chromium with golden medium is alternately laminated constitutes, and the number of plies that constitutes the multilayer dielectric film system of the chromium of this shading layer film system and gold layer is 10 layers.The performance characteristics of shading layer film in present embodiment system is: this shading layer film system effectively absorbing wavelength at the light of 950nm～1100nm, thereby prevent to form the interference hot spot by the veiling glare that light activated element reflects, be that 0 to be wavelength stopped fully less than the light of 950nm to optical transmission rate simultaneously, and have a light hole or light penetrating slit on the shading layer at least less than the 950nm wavelength.The quantity of light hole or seam is in general at one or more, and aperture or to stitch wide be 95 μ m～105 μ m, and the spacing between hole or the seam is more than the 700 μ m.Shading layer film in the present embodiment is to have 2 light holes on 3, and Circularhole diameter is 100 μ m, pitch of holes 700 μ m.The shape of light hole, quantity and the actual conditions according to selected mask mother matrix of distributing then are different and correspondingly change.
Fig. 2 is the quantum efficiency figure of sun sensor light activated element spectral response, and as shown in Figure 2, among the quantum efficiency figure of sun sensor light activated element spectral response, the saturated light electron number of each pixel is 135000.Solar radiation is equivalent to the blackbody radiation of surface temperature 5800K, and on Earth's orbit, its power density is about 1400W/m
2
Fig. 3 is solar radiation relative distribution plan of its spectral energy on Earth's orbit, and as shown in Figure 3, elemental area is got 15 μ m in the present embodiment
2, solar spectrum energy distributes and multiply by the corresponding transmissivity of each spectrum of filter layer, multiply by each elemental area again, can obtain the luminous energy of solar radiation to each pixel.Be converted into the quantum efficiency that multiply by the light activated element spectral response after the photon number according to Planck law, obtain solar radiation to photoelectron number that each pixel produced.
Fig. 4 is the filter layer spectral-transmission favtor design curve synoptic diagram of mask of the present invention, according to above-mentioned derivation, obtains filter layer spectral-transmission favtor design curve.
The manufacture method of the optical mask among the present invention is based on the MEMS production technology, makes in the environment of cleanliness factor more than 10.
Fig. 5 is the realization flow synoptic diagram of mask manufacture method of the present invention, and as shown in Figure 5, the specific implementation flow process of manufacture method of the present invention may further comprise the steps:
Step 501: with diameter is that the white stone rod of 12mm is a raw material, and cutting into thickness is that 500um, diameter are the cylindric matrix of 12mm, and bottom surface on the matrix is carried out glossing handle, and forms photomask substrate 1.
Step 502: is 2 in the plating of the one side of aforementioned mask substrate with the multilayer dielectric film system that is made of silicon and the silicon dioxide tunic that promptly filters.
Described optical filtering tunic is 2 to be plate the optical filtering tunic with rotary process on photomask substrate to be on the KW-4 type sol evenning machine that U.S. SIGMA-ALDRICH company makes; the 30 layer dielectrics system that this optical filtering tunic system is made up of silicon and silicon dioxide, every layer thickness is 1/4th of a mask operation wavelength.
Step 503: above-mentioned optical filtering tunic be on 2 plating being that the shading layer film is 3 by chromium and the alternately laminated multilayer dielectric film system that constitutes of gold.
In the present embodiment, adopting the method for evaporation is that plating shading layer film is 3 on 2 at the optical filtering tunic, and described shading layer film is 3 to be multilayer dielectric film systems of 10 layers, and every layer thickness is 1/4th of mask operation wavelength in this multilayer dielectric film system.
Step 504: the shading layer film after above-mentioned steps is finished is to be coated with photoresist on 3.
Step 505: have the mask mother matrix of 2 small sircle hole patterns to be pressed on the shading layer film that imposes photoresist drafting and fasten, under the ultraviolet ray irradiation, photoresist is exposed then.
Step 506: with mask be placed on prepared, the solution component is bottled hydrochloric acid (HCl) and bottled nitric acid (HNO
3) volume ratio is that the resistance luminescent material that the shading layer film that the photoresist tapping is exposed is fastened erodes in three to one the corrosive liquid, thereby forms light hole.
Step 507: with mask be successively placed in distilled water and the absolute ethyl alcohol clean after, be placed on temperature and be in 95 ℃ the baking oven, keep making it more than 30 minutes oven dry.
Fig. 6 adopts such scheme and technology manufacturing for the perspective view of mask of the present invention, this mask, and as shown in Figure 6, the diameter of this finished product is 12.6mm, and thickness is 0.46mm.
Fig. 7 is the measured spectra transmittance graph design sketch of mask of the present invention, and finishing the testing tool that uses in this spectral transmission rate curve test experiments is the near-infrared spectrometers of the model of U.S. CONTROL DEVELOP-MENT company as NIR-900.
Fig. 8 is the experimental provision structural representation of mask simulation test of the present invention, as shown in Figure 8, in this experiment, to adopt the sun sensor of this optical mask to be installed on two turntables, solar simulator is in order to provide the illumination of enough light intensity, computing machine is in order to handle the image that collects in the experiment, used two-axle rotating table is that to be controlled automatically by BJ University of Aeronautics ﹠ Astronautics be that the model of development is the high-acruracy survey turntable of KJ-2100C in the experiment, and solar simulator adopts the solar simulator of Changchun photoelectric technology Research Institute.Its principle is: according to the difference of the angle of turntable rotation, come simulated solar light to shine the situation of the optical mask of sun sensor with different incident angles.Solar simulator irradiation intensity in the experiment is 0.2 solar constant, and the irradiation bore is 200mm, the light angle of collimation is 32 '.Here, solar constant is meant that at the distance sun one astronomical unit place wherein the mean distance between the sun and the earth astronomically is being called " astronomical unit " with the vertical unit area of sunray direction received total solar radiation energy in the unit interval.
Formed light spot image when Fig. 9 (a) is just penetrating for mask of the present invention is applied to sun sensor light, formed light spot image when Fig. 9 (b) is applied to the oblique fire of sun sensor light for mask of the present invention, shown in Fig. 9 (a), Fig. 9 (b), be that optical mask of the present invention is installed in sun sensor imageing sensor top, the hot spot details sectional drawing of the formed solar facula image of illumination is provided by solar simulator, wherein Fig. 9 (a) is the situation of sunray normal incidence, and hot spot maximum light intensity gray scale is 170; Fig. 9 (b) is the situation of sunray 50 degree incidents, and hot spot maximum light intensity gray scale is 163.The sectional drawing and the test result of experiment all show: light spot shape rule, and when the sunray oblique incidence, the hot spot light intensity is constant substantially reaches the requirement of predetermined technical indicator.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.
Claims (8)
1. a sun sensor optical mask includes photomask substrate, is coated on lip-deep optical filtering tunic system of photomask substrate and is coated on the shading layer film system that the optical filtering tunic is fastened, and it is characterized in that photomask substrate is made by white stone; Optical filtering tunic system is by the alternately laminated multilayer dielectric film system that forms of silicon and silicon dioxide, and described optical filtering tunic is that every layer thickness was 1/4th of selected operation wavelength during intermediary's plasma membrane was; Shading layer film system is that described shading layer film is to be provided with light hole by the alternately laminated multilayer dielectric film system that forms of chromium and gold.
2. sun sensor optical mask according to claim 1 is characterized in that, the thickness of described photomask substrate is 500 μ m～800 μ m.
3. sun sensor optical mask according to claim 1; it is characterized in that; described optical filtering tunic is to be to begin from the side near photomask substrate, and successively by silicon and the alternately laminated multilayer dielectric film system that constitutes of silicon dioxide, the number of plies that this optical filtering tunic is is 30 layers from inside to outside.
4. sun sensor optical mask according to claim 1, it is characterized in that, described shading layer film system be from be close to the filter layer film be the side beginning from inside to outside successively with the multilayer dielectric film system of chromium and golden alternately laminated formation, the number of plies of this shading layer film system is 10 layers.
5. according to claim 1,2 or 3 described sun sensor optical masks, it is characterized in that, described optical filtering tunic is that characteristic is a high-pass type optical filtering tunic system, and it is 0 to wavelength less than the optical transmission rate of 950nm, to wavelength greater than the optical transmission rate of 1150nm more than 80%.
6. according to claim 1,2 or 4 described sun sensor optical masks, it is characterized in that described shading layer film system is 0 to wavelength less than the optical transmission rate of 1150nm.
7. according to each described sun sensor optical mask in the claim 1 to 4, it is characterized in that, the light hole that described shading layer film is fastened is one or more hole or seam, and aperture or gap width be 95 μ m～105 μ m, and adjacent hole or slit spacing are more than 700 μ m.
8. a sun sensor optical mask manufacture method is characterised in that this method comprises the steps:
A, employing thickness are the white stone substrate of 500 μ m, and with its upper and lower surface polishing, make photomask substrate;
B, plate optical filtering tunic system with rotary process on photomask substrate on the sol evenning machine, 30 layer dielectrics that this film system is made up of silicon and silicon dioxide are that every layer thickness is 1/4th of a described mask operation wavelength;
C, fasten the method plating shading layer film system that adopts evaporation at the optical filtering tunic, 10 layer dielectrics that this shading layer film system is made up of gold and silicon are that the thickness of every layer of medium is 1/4th of described mask operation wavelength;
D, fasten at the shading layer film and to be coated with photoresist;
E, will have the mask mother matrix of one or more apertures or seam pattern to place the top of photoresist, under the ultraviolet ray irradiation to resist exposure;
F, with mask be placed on prepared, the solution component is a hydrochloric acid and the nitric acid volume ratio is in three to one the corrosive liquid, erode the resistance luminescent material that shading layer film that the photoresist tapping exposes is fastened, thereby form light hole.
G, mask put into distilled water and absolute ethyl alcohol successively and cleans after, be placed in the baking oven Celsius 95 ℃ and dry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101003948A CN100414437C (en) | 2007-06-11 | 2007-06-11 | Sun sensor optical mask and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101003948A CN100414437C (en) | 2007-06-11 | 2007-06-11 | Sun sensor optical mask and manufacturing method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101063807A CN101063807A (en) | 2007-10-31 |
| CN100414437C true CN100414437C (en) | 2008-08-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101003948A Expired - Fee Related CN100414437C (en) | 2007-06-11 | 2007-06-11 | Sun sensor optical mask and manufacturing method therefor |
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| CN (1) | CN100414437C (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169675A (en) * | 1993-12-16 | 1995-07-04 | Natl Res Inst For Metals | Substrate material for electron beam lithography |
| JP2005292162A (en) * | 2004-03-31 | 2005-10-20 | Toppan Printing Co Ltd | Halftone phase shifting mask blank, halftone phase shift mask and pattern transfer method |
| JP2006148113A (en) * | 2004-11-16 | 2006-06-08 | Samsung Electronics Co Ltd | Mask for reflecting electromagnetic wave and method for manufacturing same |
-
2007
- 2007-06-11 CN CNB2007101003948A patent/CN100414437C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169675A (en) * | 1993-12-16 | 1995-07-04 | Natl Res Inst For Metals | Substrate material for electron beam lithography |
| JP2005292162A (en) * | 2004-03-31 | 2005-10-20 | Toppan Printing Co Ltd | Halftone phase shifting mask blank, halftone phase shift mask and pattern transfer method |
| JP2006148113A (en) * | 2004-11-16 | 2006-06-08 | Samsung Electronics Co Ltd | Mask for reflecting electromagnetic wave and method for manufacturing same |
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| Publication number | Publication date |
|---|---|
| CN101063807A (en) | 2007-10-31 |
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