CN117629190A - Mask glass for sun sensor and manufacturing method thereof - Google Patents
Mask glass for sun sensor and manufacturing method thereof Download PDFInfo
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- CN117629190A CN117629190A CN202311559401.6A CN202311559401A CN117629190A CN 117629190 A CN117629190 A CN 117629190A CN 202311559401 A CN202311559401 A CN 202311559401A CN 117629190 A CN117629190 A CN 117629190A
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- 239000011521 glass Substances 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 32
- 230000031700 light absorption Effects 0.000 claims abstract description 30
- 230000005540 biological transmission Effects 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 16
- 239000011651 chromium Substances 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 238000013016 damping Methods 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims description 37
- 238000013461 design Methods 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 230000000007 visual effect Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 description 12
- 230000003595 spectral effect Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 230000004044 response Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000009835 boiling Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
The invention relates to mask glass and a manufacturing method thereof, in particular to mask glass for a sun sensor and a manufacturing method thereof, which solve the problems that when the existing mask glass is assembled by the sun sensor and a linear array CCD structure is adopted for measuring a two-axis solar angle, a double-linear-array scheme is adopted, the whole structure is complex, the positioning precision is low, and the precise positioning and the positioning process are complex. The mask glass is characterized in that: comprises a mask substrate, a light absorption film system plated on the upper surface of the mask substrate, and a light filtering film system and an attenuation film system plated on the lower surface of the mask substrate in sequence; the light absorption film system is a mixture film system of metal chromium; an N-type light transmission slit is vertically arranged at the central position on the upper surface of the light absorption film system, and the depth of the N-type light transmission slit penetrates through the upper surface of the mask substrate; the filter film system is used for matching with a detector in the sun sensor; the damping film system is a mixture film system of metal chromium.
Description
Technical Field
The present invention relates to a mask glass and a method for manufacturing the same, and more particularly, to a mask glass for a solar sensor and a method for manufacturing the same.
Background
The solar sensor is a celestial body sensor which uses the sun as a reference azimuth and is used for measuring an included angle between a certain body axis or coordinate plane of the spacecraft and solar rays. The sun sensor is a common photoelectric attitude sensor in space flight tasks and can provide angle feedback between a specific axis and a sun vector on a space vehicle. Almost all spacecraft are required to be provided with a sun sensor so as to complete the attitude control task of each stage of the spacecraft according to the attitude feedback information provided by the sun sensor. According to different working modes, the sun sensors can be divided into the following three types: (1) "0-1" type sun sensor (also known as sun appearance sensor). It indicates with a digital signal 1 or 0 whether the sun is within the field of view of the sensor; (2) analog sun sensor. The output signal it produces is a continuous function of the star's relative solar vector orientation (solar angle); (3) digital sun sensor. It is capable of providing a discrete coded output signal whose output value is a function of the measured solar angle. The digital sun sensor is characterized in that: the method has the advantages of large field of view, high precision, long service life and high reliability, and is widely applied to various types of space vehicles.
The sun sensor mainly comprises three parts: an optical head, a sensor portion, and a signal processing portion. Wherein the optical head can adopt slit, aperture, lens, prism and other modes; the sensor part can adopt photocells, CMOS devices, code plates, gratings, photodiodes, linear array CCD, area array CCD, APS, SMART and other devices. Compared with the area array CCD, the linear array CCD has the advantages of small volume, low power consumption, low price and simple peripheral processing circuit, but the optical head is assembled with the existing mask glass, the sensor part adopts the existing digital solar sensor with the linear array CCD structure, and if the measurement of the two-axis solar angle is to be realized, a double-linear-array scheme is generally required, and the whole structure is complex.
Meanwhile, most of the existing digital solar sensors are based on the principle of small hole imaging, and the focal plane is preceded by a mask glass with a single light hole or a single slit. The sun sensor with the mask glass as a single light hole or a single slit has the advantages of simple structure, easiness in implementation and the like, but the field of view is relatively small, the measurement accuracy is adversely affected by noise, stray light and the like of an image sensor, and the positioning accuracy is low. In addition, when sunlight is obliquely incident, the existing mask glass for the sun sensor has great difference between the light spot intensity formed on the detector and the light spot intensity formed when the sunlight is vertically incident, and in order to realize accurate positioning, the light spot shape is usually observed by manually changing the exposure time, so that the positioning process is complex. Furthermore, the existing mask glass for the sun sensor and the detector protection window are easy to reflect back and forth to form stray light, and the positioning accuracy of the sun sensor is also adversely affected.
Disclosure of Invention
The invention aims to provide mask glass for a sun sensor and a manufacturing method thereof, which are used for solving the technical problems that when the sun sensor is assembled with the existing mask glass by an optical head, and the sensor part adopts a linear array CCD structure to measure the sun angle of two axes, a double-linear-array scheme is needed, so that the overall structure of the sun sensor is complex, and when the optical head of the sun sensor is assembled with the existing mask glass, the positioning precision is low, and the accurate positioning and the positioning process are complex.
In order to solve the technical problems, the invention adopts the following technical scheme:
a mask glass for a sun sensor, characterized in that:
comprises a mask substrate, a light absorption film system plated on the upper surface of the mask substrate, and a light filtering film system and an attenuation film system plated on the lower surface of the mask substrate in sequence;
the light absorption film system is a mixture film system of metal chromium; an N-type light transmission slit is vertically arranged in the middle position on the upper surface of the light absorption film system, and the depth of the N-type light transmission slit penetrates through the upper surface of the mask substrate;
the optical filter film is used for matching with a detector in the sun sensor and is used for realizing that the light spot intensity formed on the detector is basically consistent when sunlight is incident from different angles, wherein the light spot intensity basically consistent means that the error of the light spot intensity formed when the sunlight is obliquely incident is less than or equal to 10% relative to the light spot intensity formed when the sunlight is perpendicularly incident;
the damping film system is a mixture film system of metal chromium.
Further, in order to better adapt the mask glass to the severe mechanical environment such as strong vibration, impact, acceleration change and the like when the spacecraft actually works, so that the mask glass is ensured not to be broken when the spacecraft is used in the severe mechanical environment, the distance between the mask glass and the detector is kept stable, the mask glass is not subjected to rotary displacement, and further the mask glass has higher stability and reliability when the spacecraft is used in the actual working environment, and the mask substrate is made of a sapphire material;
the shape of the mask substrate is a circular rectangular structure formed by cutting a cylindrical substrate at symmetrical positions on two sides of an axis by two planes parallel to the axis of the cylinder;
one side of the N-type light transmission slit, which is positioned in the middle, is perpendicular to the two planes.
Further, in order to facilitate the subsequent coating and further to ensure that the intensity of the light spot formed on the detector remains substantially uniform when the final sunlight is incident from different angles, the thickness of the mask substrate is 1 mm.+ -. 0.1mm.
Further, in order to improve the absorption rate of the stray light and further reduce the influence of the stray light on the measurement accuracy, so that the final positioning accuracy is higher, the thickness of the light absorption film system is 200nm plus or minus 20nm.
Further, in order to ensure enough light spot energy, the final positioning accuracy is higher, the positioning is more accurate, the slit width of the N-type light transmission slit is 200-220 μm, and the included angle alpha between two adjacent edges of N of the N-type light transmission slit is 45 DEG + -10%.
Furthermore, in order to improve the absorption rate of stray light formed by easy back reflection between the mask glass and the detector protection window, the final positioning precision is higher, the positioning is more accurate, and the thickness of the attenuation film system is 100nm plus or minus 10nm.
Further, the detector is STAR1000 of FillFactory;
the filter film system is a multilayer dielectric film system composed of titanium dioxide and silicon dioxide, each layer of the filter film system is one quarter of the set working wavelength of the mask glass, the number of layers is 80, and the set visual field angle of the mask glass is (120+/-5 degrees) x (120+/-5 degrees).
Thus, when the detector is STAR1000 of FillFactory company, the intensity of the light spot formed on the detector is basically consistent when sunlight is incident from different angles, the exposure time is not required to be manually changed to observe the shape of the light spot, and the positioning process is simple.
Meanwhile, the invention also provides a manufacturing method of the mask glass for the sun sensor, which is characterized by comprising the following steps of:
step one: selecting a substrate blank corresponding to the thickness dimension, the radial dimension and the material according to the thickness dimension, the radial dimension and the material requirement of the mask substrate corresponding to the mask glass to be manufactured; then polishing the upper and lower surfaces of the substrate blank; cutting the outer contour of the polished substrate blank to make the outer contour of the polished substrate blank identical to the outer contour shape and size of the mask substrate corresponding to the mask glass to be manufactured, so as to obtain the mask substrate;
step two: plating a light-absorbing film system on the upper surface of the mask substrate prepared in the first step by adopting a film plating machine with an ion source, wherein the light-absorbing film system is a mixture film system of metal chromium, and an ion gun is started for assistance in the plating process until the thickness of the light-absorbing film system reaches the thickness required by design, and the plating of the light-absorbing film system is completed;
step three: placing the mask substrate after plating of the light absorption film system in the second step on a photoresist homogenizing machine, uniformly coating photoresist on the light absorption film system by adopting a rotating method, and taking down the mask substrate from the photoresist homogenizing machine after coating;
step four: placing the prefabricated N-type light transmission slit mask master mask above the photoresist of the mask substrate after the photoresist coating is completed in the step three, and then exposing the photoresist under the irradiation of an ultraviolet light source;
step five: placing the mask substrate subjected to exposure in the step four in a developing solution for corrosion until a film layer at an N-type light transmission joint of the photoresist becomes transparent and bright;
step six: cleaning and drying the mask substrate corroded in the fifth step;
step seven: a film plating machine with an ion source is adopted to plate a filter film system on the lower surface of the mask substrate after drying in the step six, the filter film system is used for matching with a detector in a sun sensor so as to keep the light spot intensity formed on the detector basically consistent when sunlight is incident from different angles, and the light spot intensity basically consistent means that the error of the light spot intensity formed when sunlight is obliquely incident is less than or equal to 10% relative to the light spot intensity formed when the sunlight is perpendicularly incident; opening an ion gun for assistance in the process of plating the filter film system until the number of layers of the filter film system reaches the number of layers required by design, and completing the plating of the filter film system;
step eight: and (3) plating an attenuation film system on the lower surface of the filter film system on the lower surface of the mask substrate which is plated by the filter film system in the step seven by adopting a film plating machine with an ion source, wherein the attenuation film system is a mixture film system of metal chromium, and an ion gun is started for assistance in the plating process until the thickness of the attenuation film system reaches the thickness required by design, and the attenuation film system is plated, so that the mask glass for the solar sensor is obtained.
Further, the etching performed in the step five in the developing solution specifically includes: soaking in mixed solution of 40% HF, concentrated sulfuric acid and water for 25-35 seconds, taking out, washing with distilled water, soaking in FeCl3 solution with mass percent concentration of 80% or more until the film layer at the N-type light-transmitting seam of the photoresist becomes transparent and bright.
Further, in the step six, the cleaning is to sequentially put warm water at 30-50 ℃ and absolute ethyl alcohol for cleaning; the drying is carried out by placing the materials in an oven at the temperature of between 85 and 105 ℃ for drying.
The beneficial effects of the invention are as follows:
(1) The invention relates to a mask glass for a solar sensor, which comprises a mask substrate, a light absorption film system plated on the upper surface of the mask substrate, and a light filtering film system and an attenuation film system which are plated on the lower surface of the mask substrate in sequence; the solar sensor is characterized in that an N-type light transmission slit is vertically arranged in the middle position on the upper surface of the light absorption film system, three light spots can be formed on the detector through the N-type light transmission slit, and further when the solar sensor is used for measuring the two-axis solar angle under the condition that the optical head is assembled with the mask glass and the sensor part adopts a linear array CCD structure, the two-axis solar angle measurement can be realized through a single linear array CCD, and the overall structure of the solar sensor is simpler; meanwhile, the filter film system is used for matching with the detector in the sun sensor, so that the material and the layer number of the filter film system can be adjusted according to the detector selected in the sun sensor, the light spot intensity formed on the detector is basically consistent when sunlight is incident from different angles, the light spot shape is observed without manually changing the exposure time in the accurate positioning process, and the positioning process is simple; furthermore, the N-type light transmission slit is vertically arranged at the central position on the upper surface of the light absorption film system, compared with the existing mask glass which adopts a structure with a single light hole or a single slit, the view field is enlarged, and the positioning accuracy is further improved; the light absorption film system adopts a metal chromium mixture film system, so that the absorption rate of stray light is improved, the influence of the stray light on the measurement precision can be reduced, and the positioning precision can be further improved; the attenuation film system adopts a metal chromium mixture film system, so that the absorption rate of stray light formed by easy back reflection between mask glass and a detector protection window is improved, the positioning accuracy is further improved, and the positioning is more accurate; therefore, the invention solves the technical problems that when the sun sensor is assembled with the existing mask glass by the optical head and the sensor part adopts a linear array CCD structure to measure the sun angle of two axes, a double-linear-array scheme is needed, so that the overall structure of the sun sensor is complex, and when the optical head of the sun sensor is assembled with the existing mask glass, the positioning precision is low, and the accurate positioning and the positioning process are complex. The mask glass for the sun sensor is used as a light introducer of the sun sensor, light is introduced to the single-line array CCD detector, so that the sun sensor can accurately calculate the sun angles of two axes.
(2) In the mask glass for the solar sensor, the material of the mask substrate is preferably sapphire, so that the mask glass can better adapt to the requirements of severe mechanical environment, such as strong vibration, impact, acceleration change and the like, when the mask glass is used in the severe mechanical environment, the mask glass cannot be broken; in the mask glass for the solar sensor, the mask substrate is preferably in a round rectangular structure, so that the mask glass is easy to assemble, does not generate rotary displacement, and can keep the distance between the mask glass and the detector stable and unchanged; therefore, the mask glass for the solar sensor has higher stability and reliability when being used in an actual working environment.
(3) Specific film system requirements of the filter film system are given for the STAR1000 detector of the common FillFactoy company in the invention so as to meet the common application requirements.
(4) The manufacturing method of the mask glass for the sun sensor is based on MEMS technology, the MEMS technology is a technology capable of manufacturing submicron precision patterns on a substrate, processing is not performed by utilizing direct interaction between a processing tool and a material, and the processing precision is determined by the resolution of an imaging system, such as the wavelength of light waves, the diameter of light beams and the like, and the precision of the processing tool is not the precision of the processing tool; therefore, the manufacturing method based on the MEMS technology is adopted to process the N-type light transmission slit at the central position on the upper surface of the light absorption film system, and compared with the micro-machining technology which is usually used for processing on metal, the processing precision is high; compared with a laser etching process in which the etching depth is difficult to control and the inconsistent etching depth is easy to occur, the gap depth is easy to control; the N-type light transmission slit manufactured by the method has high shape and size precision, and provides powerful guarantee for the accuracy of final positioning.
(5) In the manufacturing method of the mask glass for the solar sensor, when the film system is plated, the film system plating is carried out by adopting the film plating machine with the ion source, and the ion gun is opened for assistance in the film system plating process, so that the firmness of the film system plating can be effectively improved by proving, and the film system plating of the mask glass can adapt to severe working environments in actual use, such as extremely high temperature, extremely low temperature and the like.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a mask glass for a solar sensor of the present invention;
FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a graph of the spectral response of a selected detector in a sun sensor mated with a filter film system in designing the filter film system in an embodiment of a mask glass for a sun sensor of the present invention;
FIG. 4 is a spectral radiation pattern of solar radiation in earth orbit;
FIG. 5 is a plot of the product of the spectral response of the detector of FIG. 3 and the spectral radiation pattern of solar radiation in the earth orbit of FIG. 4;
FIG. 6 is a graph of the design of a filter film system in an embodiment of a mask glass for a solar sensor according to the present invention;
FIG. 7 is a graph of the design intensity versus measured intensity of a spot formed on a detector when sunlight is incident on an embodiment of the mask glass for a solar sensor of the present invention from different angles;
FIG. 8 is a pictorial view of an embodiment of a mask glass for a solar sensor of the present invention;
fig. 9 is a photograph of a real object of the present invention when a mask glass embodiment for a solar sensor is subjected to a boiling test and a liquid nitrogen test, wherein:
(a) Carrying out a water boiling test;
(b) Liquid nitrogen test is carried out;
fig. 10 is a flow chart of a method of manufacturing a mask glass for a solar sensor of the present invention.
The reference numerals in the drawings are as follows:
1-mask substrate, 2-light-absorbing film system, 3-filter film system, 4-attenuation film system, 5-N type light-transmitting slit, diameter dimension of cylindrical surface corresponding to phi d-round rectangular structure, distance between two rectangular planes corresponding to L-round rectangular structure, height dimension of N of H-N type light-transmitting slit, angle between N adjacent two sides of alpha-N type light-transmitting slit, Q 1 Design curve of filter film system at 0 degree of sunlight incidence angle, Q 2 Design curve of filter film system at sunlight incidence angle of 30 degrees, Q 3 Design curve of filter film system at 45 degrees of sunlight incidence angle, Q 4 Design curve of filter film system at 50 degrees of sunlight incidence angle, Q 5 Design curve of filter film system at 55 degrees of sunlight incidence angle, Q 6 -design curve of the filter film system at 60 degrees of solar incidence.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
Referring to fig. 1 and 2, the mask glass for a solar sensor of the present invention includes a mask substrate 1, a light absorbing film system 2 plated on an upper surface of the mask substrate 1, and a filter film system 3 and an attenuation film system 4 sequentially plated on a lower surface of the mask substrate 1.
The light absorbing film system 2 is a mixture film system of metal chromium; an N-type light transmission slit 5 is vertically arranged in the middle position on the upper surface of the light absorption film system 2, and the depth of the N-type light transmission slit 5 penetrates through the upper surface of the mask substrate 1; the optical filter system 3 is used for matching with a detector in the sun sensor, so as to keep the light spot intensity formed on the detector basically consistent when sunlight is incident from different angles, wherein the light spot intensity basically consistent means that the error of the light spot intensity formed when the sunlight is obliquely incident is less than or equal to 10% relative to the light spot intensity formed when the sunlight is perpendicularly incident; the damping film system 4 is a metal chromium mixture film system.
In order to better adapt the mask glass to the severe mechanical environment, such as strong vibration, impact, acceleration change and the like, when the spacecraft actually works, so as to ensure that the mask glass is not broken when the spacecraft is used in the severe mechanical environment, the material of the mask substrate 1 is preferably a sapphire material. The name of the sapphire is corundum, which belongs to corundum family minerals. The sapphire selected in this example was alumina, refractive index of 1.76, birefringence of 0.008, hardness of 9, density of 3.95g/cm 3 ～4.1g/cm 3 . In order to keep the distance between the mask glass and the detector stable and unchanged when the mask glass is used in a severe mechanical environment, the mask glass cannot be rotationally shifted, so that the mask glass has higher stability and reliability when the mask glass is used in an actual working environment, and the mask substrate 1 in the embodiment is preferably in a circular rectangular structure formed between two planes after the cylindrical substrate is cut into symmetrical positions on two sides of the axis by two planes parallel to the axis of the cylinder, as shown in fig. 1; one side of the N-type light transmission slit, which is positioned in the middle, is perpendicular to the two planes. In this embodiment, the diameter size Φd of the cylindrical surface corresponding to the circular rectangular structure is 26.5 -0.1 The distance L between two rectangular planes corresponding to the round rectangular structure is 16 mm -0.1 mm. In order to facilitate the subsequent coating and further to ensure that the intensity of the light spot formed on the detector remains substantially uniform when the final sunlight is incident from different angles, the thickness of the mask blank 1 is preferably 1mm±0.1mm, and the thickness of the mask blank 1 in this embodiment is 1mm.
In order to increase the absorption rate of the stray light and further reduce the influence of the stray light on the measurement accuracy so as to make the final positioning accuracy higher, the thickness of the light absorbing film system 2 is preferably 200nm±20nm, and in this embodiment, the thickness of the light absorbing film system 2 is 200nm. The light absorbing film system 2 can realize complete absorption of light with the wavelength of 200 nm-1200 nm. In order to ensure enough light spot energy, the final positioning accuracy is higher, the positioning is more accurate, the slit width of the N-type light transmission slit 5 is preferably 200-220 μm, and the included angle alpha between two adjacent edges of N of the N-type light transmission slit is preferably 45 DEG + -10%. Referring to fig. 1, in this embodiment, the included angle α between two adjacent sides of N of the N-type light-transmitting slit is 45 °, and the height dimension H of N of the N-type light-transmitting slit is 5.4mm.
The filter film system 3 is used for matching with a detector in a sun sensor, the film system is required to be determined according to the spectral response of the detector and the set visual field angle of mask glass, the filter film system 3 has the characteristics of completely cut-off of short waves and transmission of long wave bands, the final light intensity under different sunlight incidence angles is changed by adjusting cut-off wavelength, and further the light spot intensity formed on the detector is basically kept consistent when sunlight is incident from different angles. In this embodiment, the detector selected in the sun sensor is STAR1000 of FillFactory company, the field angle of the set mask glass is (120 degree+ -5 degree) × (120 degree+ -5 degree), and the filter film system 3 matched with the STAR1000 detector of FillFactory company is designed and calculated to be a multilayer dielectric film system composed of titanium dioxide and silicon dioxide, each layer of the filter film system has a thickness of one fourth of the set working wavelength of the mask glass, and the number of layers of the filter film system is 80. Therefore, when the detector is STAR1000 of FillFactory company, the light spot intensity formed on the detector is basically consistent when sunlight is incident from different angles, the exposure time is not required to be manually changed to observe the light spot shape, and the accurate positioning process is simple. The design process of the filter film system 3 is as follows:
according to the model of the detector selected in the sun sensor, a spectrum response diagram of the detector shown in fig. 3 is obtained, and as can be seen from fig. 3, the response capacities of the detector to light with different wavelengths are different. FIG. 4 is a spectral radiation pattern of solar radiation in the earth orbit, the solar radiation corresponding toBlackbody radiation at a surface temperature of 5800K. Then, according to the spectral response diagram of the detector shown in fig. 3 and the spectral radiation diagram of the solar radiation in the earth orbit shown in fig. 4, a product diagram of the spectral response diagram of the detector shown in fig. 3 and the spectral radiation diagram of the solar radiation in the earth orbit shown in fig. 4 is obtained, and the product of the two diagrams refers to a response curve of sunlight directly irradiated on the detector. The exposure time is not required to be changed when the sun sensor works, that is, the response intensity of the detector to sunlight incident at different angles is kept consistent, and for achieving the purpose, the film system requirement of the optical filter film system 3 can be obtained by selecting the exposure time, that is, knowing the proper response intensity of the detector and performing back-push calculation through a blackbody radiation formula, and selecting the film system material in the back-push calculation process, and then calculating the film system layer number. FIG. 6 is a graph of the design of a filter film system in an embodiment of a mask glass for a solar sensor of the present invention, wherein Q 1 Is the design curve of the filter film system when the incident angle of sunlight is 0 degree, Q 2 Is the design curve of a filter film system when the incident angle of sunlight is 30 degrees, Q 3 Is the design curve of the filter film system when the incident angle of sunlight is 45 degrees, Q 4 Is the design curve of the filter film system when the incident angle of sunlight is 50 degrees, Q 5 Is the design curve of the filter film system when the incident angle of sunlight is 55 degrees, Q 6 Is a design curve of a filter film system when the incident angle of sunlight is 60 degrees. As can be seen from fig. 6, the solar light incident angle is different and the spectral transmittance is different in the same film system. FIG. 7 is a graph of the designed intensity versus measured intensity of a spot formed on a detector when sunlight is incident on an embodiment of the mask glass for a solar sensor of the present invention from different angles. As can be seen from fig. 7, when sunlight is incident on the mask glass for the solar sensor according to the embodiment of the present invention from different angles, the light spot intensities formed on the detector are substantially uniform, so that the solar sensor can be operated without changing the exposure time, and the accuracy of the above-mentioned deduction calculation process is also verified.
In order to increase the absorption rate of stray light formed by back reflection between the mask glass and the detector protection window, and to make the final positioning accuracy higher, the thickness of the attenuation film system 4 is preferably 100nm + -10 nm. The thickness of the damping film system 4 in this example was 100nm. The attenuation film system 4 realizes complete absorption of light within the working wavelength range of the mask glass, namely, the absorption of light reflected by the detector window can be realized, and the influence of stray light is avoided.
Fig. 8 is a pictorial view of an embodiment of a mask glass for a solar sensor of the present invention. As can be seen from fig. 8, the N-type light transmission slit 5 on the mask glass for the solar sensor of this embodiment has clear edges, sharp edges and corners, and no pinholes on the surface of the mask glass. Fig. 9 is a photograph of a real object of the present invention when a mask glass embodiment for a solar sensor is subjected to a boiling test and a liquid nitrogen test, wherein: (a) performing a water boiling test; and (b) performing a liquid nitrogen test. Experiments prove that the mask glass for the sun sensor can bear the severe environment with alternating high and low temperatures, can adapt to the working environment of the sun sensor, and has good film firmness and high film reliability.
Referring to fig. 10, the present invention also provides a method for manufacturing a mask glass for a solar sensor, comprising the steps of:
step one: selecting a substrate blank corresponding to the thickness dimension, the radial dimension and the material according to the thickness dimension, the radial dimension and the material requirement of the mask substrate 1 corresponding to the mask glass to be manufactured; then polishing the upper and lower surfaces of the substrate blank; cutting the outer contour of the polished substrate blank to make the outer contour of the polished substrate blank identical with the outer contour shape and size of the mask substrate 1 corresponding to the mask glass to be manufactured, so as to obtain the mask substrate 1;
step two: plating a light-absorbing film system 2 on the upper surface of the mask substrate 1 prepared in the first step by adopting a film plating machine with an ion source, wherein the light-absorbing film system 2 is a mixture film system of metal chromium, and an ion gun is started for assistance in the plating process until the thickness of the light-absorbing film system 2 reaches the thickness required by design, and the plating of the light-absorbing film system 2 is completed;
step three: placing the mask substrate 1 after plating of the light absorption film system 2 in the second step on a spin coater, uniformly coating photoresist on the light absorption film system 2 by adopting a rotating method, and taking down the mask substrate 1 from the spin coater after coating;
step four: placing the prefabricated N-type light transmission slit mask master on the photoresist of the mask substrate 1 after the photoresist coating is completed in the step three, and then exposing the photoresist under the irradiation of an ultraviolet light source;
step five: placing the mask substrate 1 subjected to exposure in the step four in a developing solution for corrosion until a film layer at an N-type light transmission slit 5 of the photoresist becomes transparent and bright;
step six: cleaning and drying the mask substrate 1 corroded in the fifth step;
step seven: a film plating machine with an ion source is adopted to plate a filter film system 3 on the lower surface of the mask substrate 1 after drying in the step six, the filter film system 3 is used for matching with a detector in a sun sensor so as to realize that the light spot intensity formed on the detector is basically consistent when sunlight is incident from different angles, and the basically consistent light spot intensity means that the error of the light spot intensity formed when sunlight is obliquely incident is less than or equal to 10% relative to the light spot intensity formed when the sunlight is vertically incident; opening an ion gun for assistance in the process of plating the filter film system 3 until the number of layers of the filter film system 3 reaches the design requirement number of layers, and completing the plating of the filter film system 3;
step eight: and (3) plating an attenuation film system 4 on the lower surface of the filter film system 3 on the lower surface of the mask substrate 1 which is plated by the filter film system 3 in the step (seven) by adopting a film plating machine with an ion source, wherein the attenuation film system 4 is a metal chromium mixture film system, and an ion gun is started for assistance in the plating process until the thickness of the attenuation film system 4 reaches the design requirement thickness, and the attenuation film system 4 is plated, so that the mask glass for the solar sensor is obtained.
In this embodiment, in the polishing in the first step, the surface shape after the polishing is required to have an aperture equal to 2 and a local aperture equal to 0.2.
And fifthly, placing the substrate in a developing solution to perform corrosion specifically: soaking in mixed solution of 40% HF, concentrated sulfuric acid and water for 25-35 seconds, taking out, cleaning with distilled water, soaking in FeCl3 solution with mass percent concentration of 80% or more until the film layer at the N-type light-transmitting seam 5 of the photoresist becomes transparent and bright.
Step six, the cleaning is to sequentially put warm water at 30-50 ℃ and absolute ethyl alcohol for cleaning; the drying refers to the drying by placing in an oven at 85-105 ℃.
The mask glass for the sun sensor has the characteristics of easiness in processing, manufacturing and assembling, capability of avoiding rotary displacement, adaptability to severe working environment and mechanical environment of a spacecraft, high light transmission slit position and shape dimensional precision, basically consistent light spot intensity formed by incidence of sunlight with different angles on a detector and the like.
Claims (10)
1. A mask glass for a sun sensor, characterized by:
comprises a mask substrate (1), a light absorption film system (2) plated on the upper surface of the mask substrate (1), a light filtering film system (3) and an attenuation film system (4) plated on the lower surface of the mask substrate (1) in sequence;
the light absorption film system (2) is a mixture film system of metal chromium; an N-type light transmission slit (5) is vertically arranged in the middle position on the upper surface of the light absorption film system (2), and the depth of the N-type light transmission slit (5) penetrates through the upper surface of the mask substrate (1);
the optical filter film system (3) is used for matching with a detector in the sun sensor, so that when sunlight is incident from different angles, the light spot intensity formed on the detector is basically consistent, and the light spot intensity basically consistent means that the error of the light spot intensity formed when the sunlight is obliquely incident is less than or equal to 10% relative to the light spot intensity formed when the sunlight is perpendicularly incident;
the damping film system (4) is a mixture film system of metal chromium.
2. The mask glass for a solar sensor according to claim 1, wherein:
the material of the mask substrate (1) is a sapphire material;
the shape of the mask substrate (1) is a circular rectangular structure formed by cutting a cylindrical substrate at symmetrical positions on two sides of an axis by two planes parallel to the axis of the cylinder;
one side of the N-type light transmission slit, which is positioned in the middle, is perpendicular to the two planes.
3. The mask glass for a solar sensor according to claim 1, wherein:
the thickness of the mask blank (1) is 1mm + -0.1 mm.
4. A mask glass for a sun sensor according to claim 3, wherein:
the thickness of the light absorption film system (2) is 200nm plus or minus 20nm.
5. The mask glass for a solar sensor according to claim 4, wherein:
the width of the N-type light-transmitting slit (5) is 200-220 mu m, and the included angle (alpha) between two adjacent edges of N of the N-type light-transmitting slit is 45 DEG + -10%.
6. A mask glass for a sun sensor according to any one of claims 1 to 5, wherein:
the thickness of the attenuation film system (4) is 100nm +/-10 nm.
7. The mask glass for a solar sensor according to claim 6, wherein:
the detector is STAR1000 of FillFactory company;
the filter film system (3) is a multilayer dielectric film system composed of titanium dioxide and silicon dioxide, wherein the thickness of each layer is one quarter of the set working wavelength of the mask glass, the number of layers is 80, and the set visual field angle of the mask glass is (120+/-5 degrees) x (120+/-5 degrees).
8. A method of manufacturing a mask glass for a solar sensor according to any one of claims 1 to 7, comprising the steps of:
step one: selecting a substrate blank corresponding to the thickness dimension, the radial dimension and the material according to the thickness dimension, the radial dimension and the material requirement of the mask substrate (1) corresponding to the mask glass to be manufactured; then polishing the upper and lower surfaces of the substrate blank; cutting the outer contour of the polished substrate blank to make the outer contour of the polished substrate blank identical to the outer contour shape and size of the mask substrate (1) corresponding to the mask glass to be manufactured, so as to prepare the mask substrate (1);
step two: plating a light absorption film system (2) on the upper surface of the mask substrate (1) prepared in the first step by adopting a film plating machine with an ion source, wherein the light absorption film system (2) is a metal chromium mixture film system, and an ion gun is started for assistance in the plating process until the thickness of the light absorption film system (2) reaches the thickness required by design, and the plating of the light absorption film system (2) is completed;
step three: placing the mask substrate (1) plated by the light absorption film system (2) in the second step on a spin coater, uniformly coating photoresist on the light absorption film system (2) by adopting a rotating method, and taking down the mask substrate (1) from the spin coater after coating;
step four: placing the prefabricated N-type light-transmitting slit mask master mask above the photoresist of the mask substrate (1) after the photoresist coating is completed in the step three, and then exposing the photoresist under the irradiation of an ultraviolet light source;
step five: placing the mask substrate (1) subjected to exposure in the step four in a developing solution for corrosion until a film layer at an N-type light transmission slit (5) of the photoresist becomes transparent and bright;
step six: cleaning and drying the mask substrate (1) corroded in the fifth step;
step seven: a film plating machine with an ion source is adopted to plate a light filtering film system (3) on the lower surface of the mask substrate (1) dried in the step six, the light filtering film system (3) is used for matching with a detector in a sun sensor so as to keep the light spot intensity formed on the detector basically consistent when sunlight is incident from different angles, and the light spot intensity basically consistent means that the error of the light spot intensity formed when sunlight is obliquely incident is less than or equal to 10% relative to the light spot intensity formed when the sunlight is vertically incident; opening an ion gun for assistance in the process of plating the filter film system (3) until the number of layers of the filter film system (3) reaches the number of layers required by design, and completing plating of the filter film system (3);
step eight: and (3) plating an attenuation film system (4) on the lower surface of the optical filter film system (3) on the lower surface of the mask substrate (1) which is plated by adopting a film plating machine with an ion source, wherein the attenuation film system (4) is a metal chromium mixture film system, an ion gun is opened for assistance in the plating process until the thickness of the attenuation film system (4) reaches the design requirement thickness, and the attenuation film system (4) is plated, so that the mask glass for the solar sensor is obtained.
9. The method for manufacturing a mask glass for a solar sensor according to claim 8, wherein:
and fifthly, placing the substrate in a developing solution to perform corrosion, wherein the specific steps are as follows: soaking in mixed solution of 40% HF, concentrated sulfuric acid and water for 25-35 seconds, taking out, cleaning with distilled water, soaking in FeCl3 solution with mass percent concentration of 80% or more until the film layer at the N-type light-transmitting slit (5) of the photoresist becomes transparent and bright.
10. The method for manufacturing a mask glass for a sun sensor according to claim 8 or 9, characterized in that:
step six, cleaning is carried out by sequentially placing the materials into warm water at 30-50 ℃ and absolute ethyl alcohol; the drying is carried out by placing the materials in an oven at the temperature of between 85 and 105 ℃ for drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311559401.6A CN117629190A (en) | 2023-11-21 | 2023-11-21 | Mask glass for sun sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311559401.6A CN117629190A (en) | 2023-11-21 | 2023-11-21 | Mask glass for sun sensor and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN117629190A true CN117629190A (en) | 2024-03-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311559401.6A Pending CN117629190A (en) | 2023-11-21 | 2023-11-21 | Mask glass for sun sensor and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN117629190A (en) |
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- 2023-11-21 CN CN202311559401.6A patent/CN117629190A/en active Pending
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