CN100413014C - Field emission display - Google Patents

Field emission display Download PDF

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Publication number
CN100413014C
CN100413014C CNB2004100265935A CN200410026593A CN100413014C CN 100413014 C CN100413014 C CN 100413014C CN B2004100265935 A CNB2004100265935 A CN B2004100265935A CN 200410026593 A CN200410026593 A CN 200410026593A CN 100413014 C CN100413014 C CN 100413014C
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CN
China
Prior art keywords
field emission
emission display
anode
fluorescence coating
negative electrode
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Expired - Fee Related
Application number
CNB2004100265935A
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Chinese (zh)
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CN1670899A (en
Inventor
简士哲
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CNB2004100265935A priority Critical patent/CN100413014C/en
Publication of CN1670899A publication Critical patent/CN1670899A/en
Application granted granted Critical
Publication of CN100413014C publication Critical patent/CN100413014C/en
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Abstract

The present invention discloses a field emitting displayer which comprises a cathode, a high resistance layer, a plurality of tips, an anode and a fluorescent layer, wherein the high resistance layer is formed on the cathode, the tips are vertically arranged on the high resistance layer, and the anode is coated with the fluorescent layer which comprises a plurality of scattering particles. Under the action of the scattering particles, incident fluorescent light is scattered to every direction in order to improve the diffusivity of a light beam. Therefore, the present invention can achieve uniform image displaying effects.

Description

Field Emission Display
[technical field]
The invention relates to a kind of Field Emission Display.
[background technology]
Most popular display is that (but more and more higher along with what image definition and display screen size were required, CRT monitor more and more can't satisfy people's demand to cathode ray tube for Cathode RayTube, CRT) display on the our times.In recent years, flat-panel monitor development and is widely used in electronic applications such as personal computer rapidly.Using the most general flat-panel monitor at present is LCD, but there are many shortcomings in LCD at manufacture view, and for example, the speed of the unformed silicon of deposition is slow on face glass, yield is lower.Secondly, LCD needs the backlight of higher-energy, causes waste yet most of energy that backlight produces all can not be utilized.Moreover the display image of LCD is subjected to the restriction at ambient brightness and visual angle, promptly is difficult to see its image at bright environment with at the visual angle of broad.In addition, the response time of LCD is depended on the response time of liquid crystal material to applied field, and therefore, the response speed of LCD is slower, and the response time of exemplary lcd generally arrives 75ms between 25ms.The application of above-mentioned drawbacks limit LCD aspect many as high definition TV, large-sized panel display device etc.Compare LCD, plasma display then is more suitable for being applied to high definition TV and giant display.But the plasma display consumes power is more, and the heat of its generation is also too many.
Developed other flat-panel monitor again in recent years on LCD and plasma display basis, Field Emission Display promptly is a kind of of this flat-panel monitor.Field Emission Display applies voltage by the tip on the target and causes electronics to send from the tip, and bump is deposited on fluorescence coating on the positive plate and luminous generation image then.Field Emission Display is compared with plasma display with LCD, has higher contrast, wider visual angle, higher brightness, lower energy loss, shorter response time and wideer operating temperature range.
An a kind of sub-pixel unit of prior art Field Emission Display can be with reference to Fig. 1, and this sub-pixel unit 1 comprises one first substrate, 6, one second substrates, 3, one metal films, 9, one slot liner bodies, 8, one gate 7, one tips, 10, one transparency electrodes 4 and fluorescence coatings 5.Wherein, metal film 9 uses as negative electrode, and transparency electrode 4 is used as anode, and most advanced and sophisticated 10 use as electron emission source.
Metal film 9 is positioned on first substrate 6, slot liner body 8 is positioned on the metal film 9 and this slot liner body 8 is kept apart gate 7 and metal film 9, a plurality of most advanced and sophisticated 10 vertical arrangements are on metal film 9, and transparency electrode 4 is positioned on second substrate 3, and fluorescence coating 5 is coated on the transparency electrode 4.
But above-mentioned Field Emission Display has following defective:
At first, the tip makes difficulty.In Field Emission Display, electronic transmitting efficiency will directly have influence on its luminous and resolution, but for now, still there is technical barrier in most advanced and sophisticated manufacturing process, thus cause electronic transmitting efficiency lower, thus influence the luminous and resolution of Field Emission Display.
Secondly, even adopt identical technical process also to realize most advanced and sophisticated uniformity not too easily.Because each pixel all is made of a plurality of sub-pixels, thereby a little unit goes wrong and can't badly influence the function of whole pixel, if but most advanced and sophisticated on pixel skewness, then will present unsettled image on the display.
Once more, Field Emission Display is to utilize the electron bombard fluorescence coating and spontaneous radiation is luminous, but because uniformity is realized than difficult in the tip that is arranged on the pixel, thereby cause the electronics of launching from the tip to impinge upon on the fluorescence coating, cause the light that sends also to present uneven phenomenon uneven.Simultaneously, be to improve image brightness, the fluorescence coating on the anode is thinner usually, so electron emission source electricity can not fully absorb by fluorescence coating, reduces the electro-optical efficiency of Field Emission Display thus, causes the phenomenon of non-uniform light to take place.
[summary of the invention]
For overcoming the problem of prior art Field Emission Display non-uniform light, the invention provides a kind of luminous Field Emission Display uniformly.
The technical scheme that technical solution problem of the present invention is adopted is: a kind of Field Emission Display is provided, it comprises a negative electrode, a resistive formation, a plurality of tip, an anode and a fluorescence coating, this resistive formation is formed on this negative electrode, these a plurality of most advanced and sophisticated vertical arrangements are on this resistive formation, this fluorescence coating is coated on this anode, wherein, has a plurality of scattering particless in this fluorescence coating, these a plurality of scattering particless are made by silicon dioxide, and the size of these a plurality of scattering particless is between 1 μ m~50 μ m.
Compared to prior art, because Field Emission Display of the present invention adds a plurality of scattering particless in its fluorescence coating, therefore be subjected to the attraction of accelerating voltage on this positive plate and to clash into fluorescence coating luminous when the electronics that launch from these a plurality of tips, this moment is under the effect of these a plurality of scattering particless, the fluorescence of incident will be to all directions scattering, thereby improve the diffusivity of light beam, reach than the uniform image display effect.
[description of drawings]
Fig. 1 is the sectional view of a sub-pixel unit of prior art Field Emission Display.
Fig. 2 is the phantom of Field Emission Display pixel cell of the present invention.
Fig. 3 is the enlarged drawing of Fig. 2 III part.
[embodiment]
Seeing also Fig. 2 and Fig. 3, is the preferred forms of Field Emission Display of the present invention.This Field Emission Display comprises a plurality of pixel cells 2, and wherein each pixel cell 2 comprises a substrate 150, a negative electrode 152, a resistive formation 154, a plurality of most advanced and sophisticated 140, one slot liner body 142, a gate 156, a supporter 130, a transparent panel 160, an anode 162 and a fluorescence coating 164.
This negative electrode 152 is arranged on this substrate 150, this resistive formation 154 is formed on this negative electrode 152, these a plurality of most advanced and sophisticated 140 vertical arrangements are on this resistive formation 154, this slot liner body 142 is separated this negative electrode 152 and this gate 156, this supporter 130 is separated this gate 156 and this anode 162, this anode 162 is positioned on this transparent panel 160, and this fluorescence coating 164 is coated on this anode 162 and wherein has a plurality of scattering particless 132.
This negative electrode 152 is made of metal, so negative electrode 152 has good electrical conductivity.This resistive formation 154 is made up of the oxide of silicon, and this resistive formation 154 has the effect of resistance buffering.This a plurality of most advanced and sophisticated 140 uses as electron emission source.The height of this supporter 130 can be used for controlling the distance between this gate 156 and this anode 162, thereby effectively reduces emission voltage.This anode 162 is because of nucleophobic bump, thus the conduction of employing and thermal conductivity preferably material make, such as metal material, this anode 162 is ground connection directly, thereby simplify circuit design and improve radiating effect, the reliability of increase Field Emission Display of the present invention.
This a plurality of scattering particles 132 is made by silicon dioxide, but the size of particle and quantity can have influence on the diffusion of light, the many more diffusion effects of the big more quantity of particle are good more, the visual angle is also big more, but briliancy can reduce, so need reasonably to select the size of particle, the size of present embodiment scattering particles 132 is between 1 μ m~50 μ m.
When the pixel cell 2 of Field Emission Display of the present invention is worked, thereby an emission voltage is added in and makes electronics a plurality of most advanced and sophisticated 140 send the formation electron stream from this between this negative electrode 152 and this gate 156, this electron stream one be formed at accelerating voltage between this gate 156 and this anode 162 attract under this fluorescence coating 164 of bump and luminous, this light is dispersed to all directions after these a plurality of scattering particles 132 scatterings, improve the diffusivity of light beam, thereby reach than the uniform image display effect.
The size or density edge of these a plurality of scattering particless 132 and these a plurality of most advanced and sophisticated 140 relative these anode 162 surfaces away from direction increase gradually, after a plurality of most advanced and sophisticated 140 electron beams of launching clash into this fluorescence coating 164 from this, this fluorescence coating 164 is luminous with spontaneous radiation, light one way or another under the effect of these a plurality of scattering particless 132 is dispersed, since the size or density edge of these a plurality of scattering particless 132 and these a plurality of most advanced and sophisticated 140 relative these anode 162 surfaces away from direction increase gradually, therefore the fluorescence that goes out of this fluorescence coating spontaneous radiation probability that is mapped to these a plurality of scattering particless 132 these anode 162 surfaces that edge and this a plurality of most advanced and sophisticated 140 is relative away from direction increase gradually, therefore the scattering angle of light will improve constantly, thereby make to have wider visual angle, improve luminous uniformity thus from the light of these anode 162 outgoing.

Claims (8)

1. Field Emission Display, comprise a negative electrode, a resistive formation, a gate, a plurality of tip, an anode and a fluorescence coating, this resistive formation is arranged on this negative electrode, these a plurality of tips and this gate have certain intervals, this fluorescence coating is coated on this anode, it is characterized in that: this fluorescence coating has a plurality of scattering particless, and these a plurality of scattering particless are made by silicon dioxide, and the size of these a plurality of scattering particless is between 1 μ m~50 μ m.
2. Field Emission Display as claimed in claim 1 is characterized in that: the size edge of these a plurality of scattering particless this anode surface relative with these a plurality of tips away from direction increase gradually.
3. Field Emission Display as claimed in claim 1 is characterized in that: the density edge of these a plurality of scattering particless this anode surface relative with these a plurality of tips away from direction increase gradually.
4. Field Emission Display as claimed in claim 1 is characterized in that: further comprise a substrate, this negative electrode is made of metal, and is positioned on this substrate.
5. Field Emission Display as claimed in claim 1 is characterized in that: further comprise a transparent panel, this anode is made by metal material, and is positioned on this transparent panel.
6. Field Emission Display as claimed in claim 5 is characterized in that: this anode is a transparency electrode.
7. Field Emission Display as claimed in claim 6 is characterized in that: this transparency electrode is an indium tin oxide.
8. Field Emission Display as claimed in claim 1 is characterized in that: this resistive formation is made up of the oxide of silicon.
CNB2004100265935A 2004-03-16 2004-03-16 Field emission display Expired - Fee Related CN100413014C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2004100265935A CN100413014C (en) 2004-03-16 2004-03-16 Field emission display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004100265935A CN100413014C (en) 2004-03-16 2004-03-16 Field emission display

Publications (2)

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CN1670899A CN1670899A (en) 2005-09-21
CN100413014C true CN100413014C (en) 2008-08-20

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4299450A (en) * 1978-08-18 1981-11-10 Sharp Kabushiki Kaisha Elastomer display
CN1467775A (en) * 2002-07-12 2004-01-14 �踻�����ܹ�ҵ(����)���޹�˾ Field emission display device
CN1467786A (en) * 2002-07-12 2004-01-14 鸿富锦精密工业(深圳)有限公司 Field emission display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4299450A (en) * 1978-08-18 1981-11-10 Sharp Kabushiki Kaisha Elastomer display
CN1467775A (en) * 2002-07-12 2004-01-14 �踻�����ܹ�ҵ(����)���޹�˾ Field emission display device
CN1467786A (en) * 2002-07-12 2004-01-14 鸿富锦精密工业(深圳)有限公司 Field emission display device

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