CN100408720C - Method for implementing plasma temp-rising injection penetration and device thereof - Google Patents
Method for implementing plasma temp-rising injection penetration and device thereof Download PDFInfo
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- CN100408720C CN100408720C CNB2005100104891A CN200510010489A CN100408720C CN 100408720 C CN100408720 C CN 100408720C CN B2005100104891 A CNB2005100104891 A CN B2005100104891A CN 200510010489 A CN200510010489 A CN 200510010489A CN 100408720 C CN100408720 C CN 100408720C
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Abstract
The present invention relates to a method for implementing plasma heating and penetration and a device thereof, which belongs to the technical field of the injection of a base iron of plasma. The present invention needs to solve the problem of the difficult selection of penetration technological parameters caused by heating a workpiece only by injecting the plasma in the penetration technological process. The signal input end of an infrared temperature measuring device 5 of the present invention is connected with a temperature testing mouth of a vacuum chamber 10. The output end of the 5 is connected with the input end of an auxiliary heat source controller 6, the output end of 6 is connected with the input end of an auxiliary heat source 4, and a heat resistance regulating block 2 is fixed between a working table 11 and a water cooled electrode device 3. The method of the present invention is characterized in that a workpiece 1 is cooled below set penetration temperature by the 2 and the 3; then, the 6 is controlled to regulate the output power of the 4 by the workpiece temperature feedback by the 5; the workpiece is below the set penetration temperature by the 4. The present invention has the advantage that the heating and penetration processing of the workpiece at the arbitrary penetration temperature of 200 to 500 DEG C is realized so that heating and penetration technology design has great flexibility and repeated control performance.
Description
Technical field
The invention belongs to the technical field that plasma based ion is injected, be specifically related to a kind of method and device of realizing temp-rising injection penetration technology.
Background technology
Plasma temp-rising injection penetration is a kind of novel technique that grows up for the shortcoming that overcomes common plasma based ion injection modified layer more shallow (＜0.1 μ m).Plasma temp-rising injection penetration is that (generally at 200-500 ℃) carries out the method that plasma based ion is injected to workpiece at a certain temperature.Energetic ion can make workpiece surface produce a large amount of defectives when injecting workpiece, and when workpiece temperature was low, the mobility of injecting ion and defective was very poor, and at this moment modified layer is very shallow; After the temperature rise of workpiece reached certain value, the mobility of injecting ion and defective increased, and injected ion and greatly strengthened to workpiece internal divergence ability, and modified layer thickness is greatly increased.The plasma temp-rising injection penetration technology organically combines ion implantation and diffusion, can relative temperature than the lowland condition under and obtain thick surface reforming layer in short time.
In ion implantation process, energetic ion injects sample, finally stays in the workpiece, and the kinetic energy of energetic ion is converted into heat energy, and the temperature of workpiece is raise, and this part energy can be used as a thermal source.But ion implantation heating efficiency to workpiece changes with the variation of processing parameter (injecting voltage and current density), only rely on ion implantation energy that workpiece is heated, can select to produce very big restriction to the temp-rising injection penetration processing parameter, as at low injecting voltage and low when injecting electric current, ion implantation heat effect is very little, can't realize that the notes of comparatively high temps ooze; And under the condition of high injecting voltage and high injection electric current, ion implantation heat effect is very strong, may make the temperature of workpiece surpass preset temperature.Therefore to realize controlling flexibly plasma temp-rising injection penetration technology, need the design additional unit, and whether additional device rationally be the key that can the temp-rising injection penetration technology effectively realize.
Summary of the invention
In order to solve the injection that only relies on plasma body in the existing notes cementation process process workpiece heating is made the problem of cementation process difficult parameters to select of annotating, the invention provides a kind of method and device thereof of realizing plasma temp-rising injection penetration.The inventive system comprises vacuum chamber, radio-frequency (RF) plasma reactor, high-voltage pulse power source and worktable, the plasma body output terminal of radio-frequency (RF) plasma reactor connects the plasma body input aperture of vacuum chamber, it also comprises infrared temperature measurement apparatus, the auxiliary thermal source controller, auxiliary thermal source, thermal resistance regulating block and water cooled electrode device, described thermal resistance regulating block is the cylinder of hollow, the right side of described cylinder has one first through hole, the left side of described cylinder has one second through hole, the length of described thermal resistance regulating block is 30～100 millimeters, and the barrel bore of described thermal resistance regulating block is 15～34 millimeters; The material of described thermal resistance regulating block is a kind of in copper, steel, aluminium and their alloy; The detectable signal input terminus of infrared temperature measurement apparatus connects the temperature test mouth of vacuum chamber, the signal output part of infrared temperature measurement apparatus connects the signal input part of auxiliary thermal source controller, the control signal output terminal of auxiliary thermal source controller connects the control signal input terminus of auxiliary thermal source, the thermal resistance regulating block is fixed between worktable and the water cooled electrode device, auxiliary thermal source, thermal resistance regulating block and worktable are in the vacuum chamber, the head end of water cooled electrode device is in the vacuum chamber, the end of water cooled electrode device is fixed on the locular wall of vacuum chamber, and the end electrodes of water cooled electrode device connects the output terminal of high-voltage pulse power source.Method of the present invention realizes by following steps: one, the temperature rise of measuring and calculating workpiece under the condition of the area density of selected ion implanting voltage and current, and annotating the range of choice of oozing voltage is 5～50KV (kilovolt), annotating the area density of oozing electric current is 0.01～0.2mA/cm
2(every square centimeter of milliampere); Two, select the material and the shape of thermal resistance regulating block according to the temperature rise of the workpiece of the first step measuring and calculating, in order to guarantee that the water cooled electrode device can ooze the notes that the temperature of workpiece is cooled to set below the temperature in the process that notes ooze, annotate the range of choice of oozing temperature be 200～500 ℃ (degree centigrade); Three, workpiece is horizontal positioned, an end of workpiece is fixed on the inner face of worktable, and workpiece is needed the plasma body input aperture of the one side of modification towards vacuum chamber; Four, the detectable signal input terminus of infrared temperature measurement apparatus connects the temperature test mouth of vacuum chamber, the signal output part of infrared temperature measurement apparatus connects the signal input part of auxiliary thermal source controller, the control signal output terminal of auxiliary thermal source controller connects the control signal input terminus of auxiliary thermal source, the thermal resistance regulating block is fixed between worktable and the water cooled electrode device, with the radiating surface of the auxiliary thermal source the other end towards workpiece; Five, ooze in the process of processing workpiece being carried out conventional the notes, temperature with the real-time monitoring workpiece of infrared temperature measurement apparatus, the notes that the temperature of workpiece are cooled to set when the water cooled electrode device ooze temperature when following, the auxiliary thermal source controller is according to the heating power of the feedback temperature Signal Regulation auxiliary thermal source of infrared temperature measurement apparatus, and the notes that make the temperature of workpiece rise to setting ooze temperature.
When the first step measuring and calculating of method, the energy transformation of utilizing principle of conservation of energy to calculate in the vacuum chamber can get W
Rh-W
Cl=σ * S * T
4-IV, wherein W
RhHeating power, W for auxiliary thermal source
ClFor heat loss through conduction power, the σ of thermal resistance regulating block and water cooled electrode device is that Stefan constant, S are that radiation surface area, the T of auxiliary thermal source is that workpiece temperature rise, I ooze voltage for annotating the mean current, the V that ooze for annotating, carry out heat calculation according to above-mentioned formula, can obtain to annotate and ooze voltage and notes and ooze the thermal resistance of corresponding relation (as shown in Figure 5) between temperature and the workpiece temperature rise and thermal resistance regulating block and annotate the relation curve (as shown in Figure 4) that oozes between the voltage; As seen from Figure 5, ooze under the parameter at different notes, along with the injection of plasma body, the temperature of workpiece is tending towards constant, therefore can ooze the temperature rise that parameter and Fig. 5 estimate workpiece according to selected notes; As seen from Figure 4, the thermal resistance range of choice of thermal resistance regulating block is 0.55～47.6K/W (opening every watt), ooze the size that voltage can be selected the thermal resistance of thermal resistance regulating block and determine the thermal resistance regulating block according to annotating, the material of thermal resistance regulating block can be copper, steel, aluminium and alloy thereof etc.Can obtain a total foundation according to heat calculation: when the low notes of high temperature ooze voltage, the bombardment power height that the power ratio that needs auxiliary thermal source to provide is ion implantation then needs thermal resistance regulating block and water cooled electrode device that very strong heat conducting and radiating ability is arranged when the high notes of low temperature ooze voltage.For fear of the complicated calculations when selecting the thermal resistance regulating block, can select the heat conductivility best material, so, the notes that also can make the notes infiltrate journey of workpiece maintain setting by the adjusting auxiliary thermal source ooze temperature.The present invention is by the output rating of adjustment auxiliary thermal source and the cooling power of water-cooled thermal resistance adjustable electrode (it is made of thermal resistance regulating block and water cooled electrode device), and coupled ion is annotated the cementation process parameter and realized workpiece temperature control.
Invention effect: can be implemented in the temp-rising injection penetration that any notes ooze under the temperature in 200～500 ℃ to workpiece by the present invention and handle, make the design of temp-rising injection penetration technology have great handiness and repeat controllability.Notes of the present invention ooze the workpiece after the processing, its wear resistance and erosion resistance rise to original tens times, can be used for various precision drive wearing pieces of under high speed, high temperature and fully loaded transportation condition, working, the aerospace precision component of especially under extreme conditions working and the cutting tool of various difficult-to-machine materials etc.
Description of drawings
Fig. 1 is the structural representation of apparatus of the present invention; Fig. 2 is the longitudinal section synoptic diagram of water cooled electrode device 3 among Fig. 1; Fig. 3 is the longitudinal section synoptic diagram of thermal resistance regulating block 2 among Fig. 1; Fig. 4 is the thermal resistance value of thermal resistance regulating block 2 under all temps and annotates the relation curve that oozes voltage; Fig. 5 annotates for plasma body and oozes the relation curve of temperature and injection length.
Embodiment
Embodiment one: referring to Fig. 1 and Fig. 2, the device of this embodiment is by vacuum chamber 10, radio-frequency (RF) plasma reactor 7, high-voltage pulse power source 9, worktable 11, infrared temperature measurement apparatus 5, auxiliary thermal source controller 6, auxiliary thermal source 4, thermal resistance regulating block 2 and water cooled electrode device 3 are formed, the plasma body output terminal of radio-frequency (RF) plasma reactor 7 connects the plasma body input aperture of vacuum chamber 10, the detectable signal input terminus of infrared temperature measurement apparatus 5 connects the temperature test mouth of vacuum chamber 10, the signal output part of infrared temperature measurement apparatus 5 connects the signal input part of auxiliary thermal source controller 6, the control signal output terminal of auxiliary thermal source controller 6 connects the control signal input terminus of auxiliary thermal source 4, thermal resistance regulating block 2 is fixed between worktable 11 and the water cooled electrode device 3, auxiliary thermal source 4, thermal resistance regulating block 2 and worktable 11 are in the vacuum chamber 10, the head end of water cooled electrode device 3 is in the vacuum chamber 10, the end of water cooled electrode device 3 is fixed on the locular wall of vacuum chamber 10, and the end electrodes 3-2-1 of water cooled electrode device 3 connects the output terminal of high-voltage pulse power source 9.
Embodiment two: referring to Fig. 1 and Fig. 2, this embodiment with the difference of embodiment one is: described water cooled electrode device 3 is by insulated enclosure cover 3-1, metal cylinder 3-2, insulation piston 3-3, water inlet pipe 3-4 and rising pipe 3-5 form, insulation piston 3-3 is provided with two through holes, the end of water inlet pipe 3-4 and rising pipe 3-5 is inserted in the metal cylinder 3-2 by two through holes on the described insulation piston 3-3 respectively, the end sealing of metal cylinder 3-2, the other end of metal cylinder 3-2 is tightly connected with the side surface of insulation piston 3-3, the outer face of the side surface of metal cylinder 3-2 and insulation piston 3-3 is enclosed with insulated enclosure cover 3-1, the other end of metal cylinder 3-2 is provided with end electrodes 3-2-1 and end electrodes 3-2-1 and exposes in the outside of insulated enclosure cover 3-1 and with the output terminal of high-voltage pulse power source 9 and link to each other, the other end of water inlet pipe 3-4 and rising pipe 3-5 also exposes in the outside of insulated enclosure cover 3-1, and thermal resistance regulating block 2 is fixed between the seal face of the outer face of worktable 11 and metal cylinder 3-2.Other compositions are identical with embodiment one with annexation.Water enters into metal cylinder 3-2 in order to absorb the heat energy of thermal resistance regulating block 2 by the workpiece 1 of worktable 11 transmission from water inlet pipe 3-4.
Embodiment three: referring to Fig. 2 and Fig. 3, this embodiment with the difference of embodiment one is: described thermal resistance regulating block 2 is the cylinder of hollow, the right side of described cylinder has one first through hole 2-1, the left side of described cylinder has one second through hole 2-2, the length L of described thermal resistance regulating block 2 is 30～100 millimeters, and the barrel bore D of described thermal resistance regulating block 2 is 15～34 millimeters.Other compositions are identical with embodiment one with annexation.Can regulate its heat-conductive characteristic by the size that changes thermal resistance regulating block 2.
Embodiment four: referring to Fig. 1 and Fig. 2, this embodiment with the difference of embodiment three is: it also comprises connecting screw rod 12, the center, outer face of worktable 11 has a threaded hole, the threaded hole of the outer face of described worktable 11 is fixedlyed connected with an end of connecting screw rod 12, the seal face of the metal cylinder 3-2 of water cooled electrode device 3 is provided with in a shrinkage pool 3-2-2 and the described shrinkage pool 3-2-2 and is provided with internal thread, and the other end of connecting screw rod 12 is fixedlyed connected with the shrinkage pool 3-2-2 of metal cylinder 3-2 with the second through hole 2-2 by the first through hole 2-1 of thermal resistance regulating block 2.Other compositions are identical with embodiment three with annexation.Make device be easy to installation and removal by the screw rod connection.
Embodiment five: referring to Fig. 1 and Fig. 2, this embodiment with the difference of embodiment one is: it also comprises support bar 8, and auxiliary thermal source 4 is fixed on the upper end of support bar 8, and the radiating surface of auxiliary thermal source 4 is towards workpiece 1.Other compositions are identical with embodiment one with annexation.
Embodiment six: referring to Fig. 1 and Fig. 2, this embodiment with the difference of embodiment two is: the outside surface of described insulated enclosure cover 3-1 is provided with flange 3-1-1, and flange 3-1-1 is fixedlyed connected with the locular wall of vacuum chamber 10.Other compositions are identical with embodiment two with annexation.
Embodiment seven: referring to Fig. 1, this embodiment with the difference of embodiment one is: described auxiliary thermal source 4 is low pressure superpower tungsten-iodine lamps of band reflection unit.Other compositions are identical with embodiment one with annexation.The output rating of described auxiliary thermal source 4 is 0～1800W; Can realize with 6 100W/25V tungsten-iodine lamps parallel with one another.
Embodiment eight: referring to Fig. 1, this embodiment with the difference of embodiment one is: the material of described thermal resistance regulating block 2 can be the material that copper, steel, aluminium and their alloy etc. have heat conductivility.Other compositions are identical with embodiment one with annexation.
Embodiment nine: referring to Fig. 1, adopt the device of embodiment one, the method of this embodiment is carried out according to the following steps: one, the temperature rise of measuring and calculating workpiece 1 under the condition of the area density of selected ion implanting voltage and current, the range of choice that notes ooze voltage is 5～50KV, and annotating the area density of oozing electric current is 0.01～0.2mA/cm
2Two, select the material and the shape of thermal resistance regulating block 2 according to the temperature rise of the workpiece 1 of the first step measuring and calculating, in order to guarantee that water cooled electrode device 3 can ooze the notes that the temperature of workpiece 1 is cooled to set below the temperature in the process that notes ooze, annotating the range of choice of oozing temperature is 200～500 ℃; Three, workpiece 1 is horizontal positioned, an end of workpiece 1 is fixed on the inner face of worktable 11, and workpiece 1 is needed the plasma body input aperture of the one side of modification towards vacuum chamber 10; Four, with the radiating surface of auxiliary thermal source 4 the other end towards workpiece 1; Five, ooze in the process of processing workpiece 1 being carried out conventional the notes, temperature with infrared temperature measurement apparatus 5 real-time monitoring workpieces 1, the notes that the temperature of workpiece 1 are cooled to set when water cooled electrode device 3 ooze temperature when following, auxiliary thermal source controller 6 is according to the heating power of the feedback temperature Signal Regulation auxiliary thermal source 4 of infrared temperature measurement apparatus 5, and the notes that make the temperature of workpiece 1 rise to setting ooze temperature.The thermal resistance range of choice of described thermal resistance regulating block 2 is 0.55～47.6K/W.
Embodiment ten: this embodiment with the difference of embodiment nine is: the pure iron workpiece is annotated oozed processing, after processing in 4 hours, the thickness of workpiece modified layer can reach 300 μ m, and the wear resistance of modified layer rises to original 2 times, and selection of process parameters is as shown in the table:
Embodiment 11: this embodiment with the difference of embodiment nine is: stainless steel work-piece is annotated oozed processing, it is 200～300 ℃ that notes ooze temperature, and annotating the area density of oozing electric current is 0.1mA/cm
2, annotate that to ooze voltage be 25KV, after handling through 4 hours, the thickness of workpiece modified layer can reach 9 μ m, and nano surface hardness is brought up to 18GPa by 3GPa (Ji Pa), and under the DRY SLIDING, and the wear resistance of workpiece modified layer has improved 20 times, erosion resistance and has improved 6 times.Other steps are identical with embodiment nine.
Embodiment 12: this embodiment with the difference of embodiment 11 is: the M50 steel workpiece is annotated oozed processing, after processing in 4 hours, the thickness of workpiece modified layer surpasses 20 μ m, nano surface hardness is brought up to 16GPa by 8GPa, and the wear resistance of workpiece modified layer has improved 5 times.Other steps are identical with embodiment 11.
Claims (7)
1. device of realizing plasma temp-rising injection penetration, comprise vacuum chamber (10), radio-frequency (RF) plasma reactor (7), high-voltage pulse power source (9) and worktable (11), the plasma body output terminal of radio-frequency (RF) plasma reactor (7) connects the plasma body input aperture of vacuum chamber (10), it is characterized in that it also comprises infrared temperature measurement apparatus (5), auxiliary thermal source controller (6), auxiliary thermal source (4), thermal resistance regulating block (2) and water cooled electrode device (3), described thermal resistance regulating block (2) is the cylinder of hollow, the right side of described cylinder has one first through hole (2-1), the left side of described cylinder has one second through hole (2-2), the length of described thermal resistance regulating block (2) is 30～100 millimeters, and the barrel bore of described thermal resistance regulating block (2) is 15～34 millimeters; The material of described thermal resistance regulating block (2) is a kind of in copper, steel, aluminium and their alloy; The detectable signal input terminus of infrared temperature measurement apparatus (5) connects the temperature test mouth of vacuum chamber (10), the signal output part of infrared temperature measurement apparatus (5) connects the signal input part of auxiliary thermal source controller (6), the control signal output terminal of auxiliary thermal source controller (6) connects the control signal input terminus of auxiliary thermal source (4), thermal resistance regulating block (2) is fixed between worktable (11) and the water cooled electrode device (3), auxiliary thermal source (4), thermal resistance regulating block (2) and worktable (11) are in the vacuum chamber (10), the head end of water cooled electrode device (3) is in the vacuum chamber (10), the end of water cooled electrode device (3) is fixed on the locular wall of vacuum chamber (10), and the end electrodes (3-2-1) of water cooled electrode device (3) connects the output terminal of high-voltage pulse power source (9).
2. a kind of device of realizing plasma temp-rising injection penetration according to claim 1, it is characterized in that described water cooled electrode device (3) is by insulated enclosure cover (3-1), metal cylinder (3-2), insulation piston (3-3), water inlet pipe (3-4) and rising pipe (3-5) are formed, insulation piston (3-3) is provided with two through holes, one end of water inlet pipe (3-4) and rising pipe (3-5) is inserted in the metal cylinder (3-2) by two through holes on the described insulation piston (3-3) respectively, the one end sealing of metal cylinder (3-2), the other end of metal cylinder (3-2) is tightly connected with the side surface of insulation piston (3-3), the outer face of the side surface of metal cylinder (3-2) and insulation piston (3-3) is enclosed with insulated enclosure cover (3-1), the other end of metal cylinder (3-2) is provided with end electrodes (3-2-1) and end electrodes (3-2-1) and exposes in the outside of insulated enclosure cover (3-1) and with the output terminal of high-voltage pulse power source (9) and link to each other, the other end of water inlet pipe (3-4) and rising pipe (3-5) also exposes in the outside of insulated enclosure cover (3-1), and thermal resistance regulating block (2) is fixed between the seal face of the outer face of worktable (11) and metal cylinder (3-2).
3. a kind of device of realizing plasma temp-rising injection penetration according to claim 1 is characterized in that it also comprises support bar (8), and auxiliary thermal source (4) is fixed on the upper end of support bar (8), and the radiating surface of auxiliary thermal source (4) is towards workpiece (1).
4. a kind of device of realizing plasma temp-rising injection penetration according to claim 1 is characterized in that described auxiliary thermal source (4) is the tungsten-iodine lamp of band reflection unit.
5. a kind of device of realizing plasma temp-rising injection penetration according to claim 1 and 2, it is characterized in that it also comprises connecting screw rod (12), the center, outer face of worktable (11) has a threaded hole, the threaded hole of the outer face of described worktable (11) is fixedlyed connected with an end of connecting screw rod (12), the seal face of the metal cylinder (3-2) of water cooled electrode device (3) is provided with in a shrinkage pool (3-2-2) and the described shrinkage pool (3-2-2) and is provided with internal thread, and the other end of connecting screw rod (12) is fixedlyed connected with the shrinkage pool (3-2-2) of metal cylinder (3-2) with second through hole (2-2) by first through hole (2-1) of thermal resistance regulating block (2).
6. a kind of device of realizing plasma temp-rising injection penetration according to claim 2 is characterized in that the outside surface of described insulated enclosure cover (3-1) is provided with flange (3-1-1), and flange (3-1-1) is fixedlyed connected with the locular wall of vacuum chamber (10).
7. utilize the described device of claim 1 to realize the method for plasma temp-rising injection penetration, it is characterized in that it carries out according to the following steps: one, the temperature rise of measuring and calculating workpiece (1) under the condition of the area density of selected ion implanting voltage and current, the range of choice that notes ooze voltage is 5～50KV, and annotating the area density of oozing electric current is 0.01～0.2mA/cm
2Two, select the material and the shape of thermal resistance regulating block (2) according to the temperature rise of the workpiece (1) of the first step measuring and calculating, in order to guarantee that water cooled electrode device (3) can ooze the notes that the temperature of workpiece (1) is cooled to set below the temperature in the process that notes ooze, annotating the range of choice of oozing temperature is 200～500 ℃; Three, workpiece (1) is horizontal positioned, an end of workpiece (1) is fixed on the inner face of worktable (11), and workpiece (1) is needed the plasma body input aperture of the one side of modification towards vacuum chamber (10); Four, the signal output part of infrared temperature measurement apparatus (5) connects the signal input part of auxiliary thermal source controller (6), the control signal output terminal of auxiliary thermal source controller (6) connects the control signal input terminus of auxiliary thermal source (4), thermal resistance regulating block (2) is fixed between worktable (11) and the water cooled electrode device (3), with the radiating surface of auxiliary thermal source (4) the other end towards workpiece (1); Five, ooze in the process of processing workpiece (1) being carried out conventional the notes, temperature with the real-time monitoring workpiece (1) of infrared temperature measurement apparatus (5), the notes that the temperature of workpiece (1) are cooled to set when water cooled electrode device (3) ooze temperature when following, auxiliary thermal source controller (6) is according to the heating power of the feedback temperature Signal Regulation auxiliary thermal source (4) of infrared temperature measurement apparatus (5), and the notes that make the temperature of workpiece (1) rise to setting ooze temperature.
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| CNB2005100104891A CN100408720C (en) | 2005-10-31 | 2005-10-31 | Method for implementing plasma temp-rising injection penetration and device thereof |
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| CNB2005100104891A CN100408720C (en) | 2005-10-31 | 2005-10-31 | Method for implementing plasma temp-rising injection penetration and device thereof |
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| CN100408720C true CN100408720C (en) | 2008-08-06 |
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| US8124508B2 (en) * | 2010-03-31 | 2012-02-28 | Advanced Ion Beam Technology, Inc. | Method for low temperature ion implantation |
| CN102601677B (en) * | 2012-03-30 | 2014-02-05 | 大连理工大学 | Atmospheric cold plasma jet auxiliary cutting method |
| CN113471051B (en) * | 2021-07-20 | 2023-08-08 | 电子科技大学长三角研究院(湖州) | Coreactor for Joule heat and plasma |
Citations (4)
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|---|---|---|---|---|
| JPH06236856A (en) * | 1993-02-09 | 1994-08-23 | Hitachi Ltd | Plasma processing apparatus |
| JPH0721959A (en) * | 1993-06-28 | 1995-01-24 | Nissin Electric Co Ltd | Charged particle beam radiating device |
| CN2195551Y (en) * | 1994-08-15 | 1995-04-26 | 核工业西南物理研究院 | Multi-function omnibearing reinforcing gravity pouring ion-filling machine |
| US5952061A (en) * | 1996-12-27 | 1999-09-14 | Stanley Electric Co., Ltd. | Fabrication and method of producing silicon films |
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2005
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06236856A (en) * | 1993-02-09 | 1994-08-23 | Hitachi Ltd | Plasma processing apparatus |
| JPH0721959A (en) * | 1993-06-28 | 1995-01-24 | Nissin Electric Co Ltd | Charged particle beam radiating device |
| CN2195551Y (en) * | 1994-08-15 | 1995-04-26 | 核工业西南物理研究院 | Multi-function omnibearing reinforcing gravity pouring ion-filling machine |
| US5952061A (en) * | 1996-12-27 | 1999-09-14 | Stanley Electric Co., Ltd. | Fabrication and method of producing silicon films |
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