CN100408717C - Preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method - Google Patents
Preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method Download PDFInfo
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- CN100408717C CN100408717C CNB021214484A CN02121448A CN100408717C CN 100408717 C CN100408717 C CN 100408717C CN B021214484 A CNB021214484 A CN B021214484A CN 02121448 A CN02121448 A CN 02121448A CN 100408717 C CN100408717 C CN 100408717C
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Abstract
The present invention relates to a process for preparing magnetic-driven memory alloy monocrystals by a zone melting unidirectional solidification process. The present invention adopts a zone melting unidirectional solidification process, and a Ni<50 to 58>Mn<20 to 30>Ga<20 to 25> alloy monocrystal is prepared by controlling the melting zone length, the temperature gradient and the crystalline growth velocity; the process route comprises: (1) a master alloy is smelted by a vacuum induction process, the vacuum degree of a substrate reaches 10<-2> to 10<-3>Pa, and then argon is charged until the pressure reaches (0.3 to 0.7)*10<3>Pa; (2) a bar is directly cast in a vacuum induction furnace; (3) zone melting unidirectional solidification is carried out, the melting zone length is controlled within the range of 10 to 20 millimeters, the temperature gradient of solidification is from 200 to 1000 K/cm, and the crystalline growth velocity is from 1 to 20 mm/min; (4) a NiMnGa alloy monocrystal is prepared; (5) the chemical composition of the NiMnGa alloy monocrystal is measured by chemical analysis or electron microprobes (energy spectrums); (6) the martensitic transformation temperature is measured by a thermal analysis system, and the magnetic-driven effect is measured by a magnetoconstriction measuring system. The present invention adopts the zone melting unidirectional solidification process to effectively prepare the NiMnGa alloy monocrystal, the axial composition deviation of the NiMnGa alloy monocrystal can be controlled within the range of 0.3%, and the martensitic transformation temperature deviation is less than 5 DEG C.
Description
(1) technical field:
A kind of preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method of the present invention belongs to novel technique.
(2) background technology:
It is very responsive to alloying constituent that nickel manganese gallium (NiMnGa) magnetic drives the martensitic transformation temperature of alloy, and, changing with alloying constituent, martensite occurs 5 layers, 7 layers and do not have multiple structure such as modulation.Preparation NiMnGa magnetic driven memory alloy monocrystalline mainly is with Bridgman method and crystal pulling method now.Because the vapour pressure height of Mn element in the NiMnGa alloy, Ga element fusing point is low, when above-mentioned prepared NiMnGa alloy, Mn and the volatilization of Ga element, be difficult to obtain the uniform NiMnGa alloy monocrystalline of composition vertically, cause altering a great deal, even multiple martensitic structure occurs, can't use along the axial martensitic transformation temperature of monocrystalline.Therefore, preparing vertically the uniform NiMnGa alloy monocrystalline of composition becomes this alloy and is able to one of key application sexual factor.
The purpose of this invention is to provide a kind of technology with preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method, change the preparation technology of NiMnGa alloy monocrystalline, prepare that composition is even vertically, the martensitic transformation temperature deviation is less than 5 ℃ high quality NiMnGa alloy monocrystalline.
(3) summary of the invention:
A kind of preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method of the present invention, it is the method that adopts the molten directional freeze in district, by control zone length, thermograde and crystalline growth velocity, preparation alloying constituent and atom proportioning are Ni
50-58Mn
20-30Ga
20-25Alloy monocrystalline, its operational path is:
(1) vacuum induction method master alloy melting, back of the body end vacuum tightness reaches 10
-1-10
-3Pa (handkerchief), applying argon gas is to 0.3-0.7 * 10 then
5Pa (handkerchief);
(2) directly casting is excellent in the vacuum induction furnace;
(3) distinguish molten directional freeze, the control zone length is at the 10-20 millimeter, the temperature of solidification gradient 200-1000K/cm (℃/cm), crystalline growth velocity is 1-20mm/min (millimeter/minute);
(4) prepare the NiMnGa alloy monocrystalline;
(5) measure chemical ingredients with chemical analysis or electronic probe (power spectrum);
(6) measure martensitic transformation temperature with Thermo System, magnetostriction measurement systems measurement magnetic driven effect.
A kind of employing preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method of the present invention, its advantage is: prepare the NiMnGa alloy monocrystalline effectively, alloy composition deviation vertically can be controlled in 0.3% scope, and the martensitic transformation temperature deviation is less than 5 ℃.
(4) description of drawings:
The molten directional freeze in Fig. 1 district prepares nickel manganese gallium alloy process flow sheet
(5) embodiment:
A kind of preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method of the present invention, it is the method that adopts the molten directional freeze in district, by control zone length, thermograde and crystalline growth velocity, preparation Ni
50-58Mn
20-30Ga
20-25Alloy monocrystalline, its operational path is a (see figure 1):
(1) vacuum induction method master alloy melting, back of the body end vacuum tightness reaches 10
-2Pa, applying argon gas to 0.5 * 10 then
5Pa;
(2) directly casting is excellent in the vacuum induction furnace;
(3) distinguish molten directional freeze, the control zone length is at 10 millimeters, and the temperature of solidification gradient is at 500K/cm, and crystalline growth velocity is 8mm/min;
(4) prepare the NiMnGa alloy monocrystalline.
(5) measure chemical ingredients with chemical analysis or electronic probe (power spectrum);
(6) measure martensitic transformation temperature with Thermo System, magnetostriction measurement systems measurement magnetic driven effect.
Adopt the method for the molten directional freeze in district, prepare the NiMnGa alloy monocrystalline effectively, alloy composition deviation vertically can be controlled in 0.3% scope, and the martensitic transformation temperature deviation is less than 5 ℃.
Claims (1)
1. the method for a preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method is characterized in that: it is the method that adopts the molten directional freeze in district, by control zone length, thermograde and crystalline growth velocity, and preparation Ni
50-58Mn
20-30Ga
20-25Alloy monocrystalline, its operational path is:
(1) vacuum induction method master alloy melting, back of the body end vacuum tightness reaches 10
-2-10
-3Pa, applying argon gas is to 0.3-0.7 * 10 then
5Pa;
(2) directly casting is excellent in the vacuum induction furnace;
(3) distinguish molten directional freeze, the control zone length is at the 10-20 millimeter, and the temperature of solidification gradient is at 200-1000K/cm, and crystalline growth velocity is 1-20mm/min;
(4) prepare the NiMnGa alloy monocrystalline;
(5) with chemical analysis or electron probe determination chemical ingredients;
(6) measure martensitic transformation temperature with Thermo System, magnetostriction measurement systems measurement magnetic driven effect.
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CNB021214484A CN100408717C (en) | 2002-06-21 | 2002-06-21 | Preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method |
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CNB021214484A CN100408717C (en) | 2002-06-21 | 2002-06-21 | Preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method |
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CN1465736A CN1465736A (en) | 2004-01-07 |
CN100408717C true CN100408717C (en) | 2008-08-06 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101982893A (en) * | 2010-10-13 | 2011-03-02 | 南京大学 | Ni-Mn based ferromagnetic shape memory alloy/piezoelectric composite and application in magnetoelectric effect thereof |
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DE102010021856A1 (en) * | 2010-05-28 | 2011-12-01 | Eto Magnetic Gmbh | Process for producing a single crystal MSM body |
CN102130292A (en) * | 2011-01-06 | 2011-07-20 | 北京理工大学 | Method for increasing magnetoelectric property of gradient material |
CN103757704A (en) * | 2014-01-24 | 2014-04-30 | 南京理工大学 | Preparation of nickel-base single-crystal high-temperature alloy through light floating zone melting directional solidification method |
CN109371473A (en) * | 2018-11-20 | 2019-02-22 | 北京航空航天大学 | A kind of method that twin in NiMnGa monocrystalline is eliminated in power thermal coupling |
CN110565169B (en) * | 2019-10-28 | 2021-01-26 | 西北有色金属研究院 | Method for cultivating Mo-Nb-W-Zr alloy single crystal seed crystal |
Citations (3)
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JPH0769774A (en) * | 1993-08-30 | 1995-03-14 | Nippon Telegr & Teleph Corp <Ntt> | Single crystal production and equipment therfor |
JPH08259393A (en) * | 1995-03-16 | 1996-10-08 | Agency Of Ind Science & Technol | Layer structure manganese oxide-based single crystal and it production |
JP2001279356A (en) * | 2000-03-28 | 2001-10-10 | Tokin Corp | Ni-Mn-Ga SERIES SHAPE MEMORY ALLOY AND ITS PRODUCTION METHOD |
-
2002
- 2002-06-21 CN CNB021214484A patent/CN100408717C/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0769774A (en) * | 1993-08-30 | 1995-03-14 | Nippon Telegr & Teleph Corp <Ntt> | Single crystal production and equipment therfor |
JPH08259393A (en) * | 1995-03-16 | 1996-10-08 | Agency Of Ind Science & Technol | Layer structure manganese oxide-based single crystal and it production |
JP2001279356A (en) * | 2000-03-28 | 2001-10-10 | Tokin Corp | Ni-Mn-Ga SERIES SHAPE MEMORY ALLOY AND ITS PRODUCTION METHOD |
Non-Patent Citations (6)
Title |
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定向凝固技术的研究进展. 杨森等.兵器材料科学与工程,第23卷第2期. 2000 |
定向凝固技术的研究进展. 杨森等.兵器材料科学与工程,第23卷第2期. 2000 * |
磁性形状记忆材料Ni-Mn-Ga研究现状. 高智勇等.功能材料,第32卷第1期. 2001 |
磁性形状记忆材料Ni-Mn-Ga研究现状. 高智勇等.功能材料,第32卷第1期. 2001 * |
铁磁形状记忆合金Ni52.2Mn23.8Ga24的马氏体相变及其物理表征. 高淑侠等.物理学报,第51卷第2期. 2002 |
铁磁形状记忆合金Ni52.2Mn23.8Ga24的马氏体相变及其物理表征. 高淑侠等.物理学报,第51卷第2期. 2002 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101982893A (en) * | 2010-10-13 | 2011-03-02 | 南京大学 | Ni-Mn based ferromagnetic shape memory alloy/piezoelectric composite and application in magnetoelectric effect thereof |
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