CN100399865C - A liftout photoelectric pole and producing method thereof - Google Patents
A liftout photoelectric pole and producing method thereof Download PDFInfo
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- CN100399865C CN100399865C CNB2004100568321A CN200410056832A CN100399865C CN 100399865 C CN100399865 C CN 100399865C CN B2004100568321 A CNB2004100568321 A CN B2004100568321A CN 200410056832 A CN200410056832 A CN 200410056832A CN 100399865 C CN100399865 C CN 100399865C
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Abstract
The present invention discloses a lift-out photoelectric pole and a producing method thereof. The lift-out photoelectric pole of the present invention comprises a substrate and an organic lighting layer positioned on the substrate. The present invention is characterized in that a rare earth element layer is arranged on the organic lighting layer; an Au layer is arranged on the rare earth element layer. The present invention uses a composite layer of lower power rare earth and Au or Cs F or a composite layer of the lower power rare earth and Au as top electric pole materials of the left-out photoelectric pole and has the advantages of good transmittance, good stability, low cost, etc. Compared with the device using Al and Ag or Al and Au as the lift-out photoelectric pole, the lighting efficiency of the electric pole of the present invention is improved to six to eight times. The light absorption and the light reflection caused by an Au film (10 nm) at the outer layer is smaller than these of an Ag film, and the Au film can not be oxidized; thus, the present invention well ensures the electrical stability and the lighting stability of the device, and well prevents steam from leaking into the organic layer. The lift-out photoelectric pole of the present invention has wide purposes for inorganic thin films, semi-conductors in lighting, photoelectric devices, optical detectors, etc.
Description
Technical field
The present invention relates to liftout optical electroluminescence device and preparation method thereof in the luminescent device field, particularly relate to a kind of liftout optical electrode and preparation method thereof.
Background technology
Organic light emission after obtained important breakthrough in 1987, its brightness, efficient and life-span etc. has satisfied the requirement that the plane shows.At present, common organic electroluminescence device is to be substrate with transparent electro-conductive glass, and light penetrates from the bottom; But require light to penetrate in some applications from the top.At some is under the situation of anode with ITO, also requires light from the top outgoing.The Organic Light Emitting Diode that ejects light has been opened up the frontier of organic luminescent device research and more wide application prospect, for example, when adopting silicon chip to make substrate, can on Si, carry out the organic light-emitting device drive circuit in advance, make organic luminous layer then, prepare liftout optical electrode at last, so just realized that silica-based photoelectricity is integrated.The resolution of silica-based organic display spare, refresh rate and power consumption generally all are better than existing organic luminescent device based on ITO.
For the luminous organic luminescent device in top, the selectable material of top electrode is many, but finally must try to achieve balance between light transmittance and conductivity.Adopt at present more have ITO and thin Al/Ag or LiF/Al/Ag composite bed (Al often is the nm magnitude), still, the former has very high requirement because deposit ITO is easy to damage organic luminous layer for equipment and technology; And the latter causes the device internal quantum efficiency low, and reflection is serious, and light transmittance is lower, and stability is also relatively poor in addition.
Summary of the invention
The purpose of this invention is to provide that a kind of work function is low, boundary reflection is little, liftout optical electrode that light transmittance is high and chemical stability is good and preparation method thereof.
Liftout optical electrode provided by the present invention comprises substrate and the organic luminous layer that is positioned on the substrate, and it is characterized in that: described organic luminous layer is provided with rare earth element layer, is provided with the Au layer on described rare earth element layer.
Wherein, described rare earth element layer is the rare earth element layer (low merit rare earth layer) with low work function, can be selected from the Sm layer by described rare earth element layer; The Yb layer; The alloy-layer of Sm and Yb; The composite bed that at least a element forms among the alloy of Sm and Yb and Sm, the Yb.According to the process conditions of preparation, adjust thickness as vacuum degree and used purity of raw materials, the rare earth element layer thickness is generally between 5-40nm.
For stability and the electrical contact performance that improves described top electrode, should be between 10-15nm at the golden layer thickness on the rare earth element layer.For guaranteeing higher light transmittance and lower square resistance, should be controlled at the gross thickness of low merit rare earth/Au composite bed between the 15-55nm.
Inject electronic capability in order to improve electrode, improve luminous efficiency, also often be marked with electron injecting layer CsF layer between organic luminous layer and rare earth element layer, its thickness is at 0.3-3nm.
Can add the masterplate of any figure at above-mentioned top electrode as required in use.
The preparation method of described liftout optical electrode comprises the steps: 1) on substrate, prepare organic luminous layer; 2) deposition of rare-earth element layer on described organic luminous layer; 3) plated metal gold on described rare earth element layer.
When preparation comprises the electrode of CsF layer structure, should be after the preparation organic layer, deposition CsF layer deposits low merit rare earth layer then earlier.
At the low merit rare earth layer of deposition, when Au layer and CsF layer, the vacuum degree of sample room is 10
-5More than the holder, device therefor can be vacuum evaporation apparatus, magnetron sputtering apparatus, electronics (ion) beam evaporation, Solid State Source molecular beam epitaxial device etc.
Liftout optical electrode structure of the present invention as shown in Figure 1, wherein A is for containing the electrode structure schematic diagram of low merit rare earth/Au layer, B is for containing the electrode structure schematic diagram of the low merit rare earth/Au of CsF/, among the figure, 1 is the Au layer; 2 are low merit rare earth layer; 3 is organic luminous layer; 4 is substrate; 5 is the CsF layer.
The present invention as the upper electrode material of liftout optical electrode, can take into account key elements such as light transmittance, stability and low cost with low merit rare earth/Au composite bed or the low merit rare earth of CsF//Au composite bed, and this thin layer can be with common vacuum deposition method (10
-5Holder) finishes.Compare with the device that adopts Al/Ag or Al/Au to make top electrode, electrode light-emitting efficient of the present invention improves 6-8 doubly, for example, the Yb layer of condition of equivalent thickness (50nm), just the aluminium light transmittance than condition of equivalent thickness exceeds about order of magnitude; And light absorption that outer field Au film (10nm) causes and light reflection are all little than the Ag film, and can be not oxidized, thereby have better guaranteed the electrical stability and the stability of photoluminescence of device, have again simultaneously to prevent that preferably steam from penetrating the effect of organic layer.Liftout optical electrode of the present invention is at inorganic thin film and semiconductor light emitting, and also there is extensive use aspects such as photoelectric device and photo-detector.
Description of drawings
Figure 1A-B is the structural representation of liftout optical electrode of the present invention.
Embodiment
Embodiment 1, has the liftout optical electrode preparation of Sm/Au layer
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, evaporation Sm and Au successively, thickness are respectively 15.0 and 15.0nm.Require vacuum degree 10
-6More than the holder, material purity is more than 99.99%, used bottom electrode substrate is the Si substrate, its organic luminous layer is NPB (60nm)/AlQ (60nm), organic material NPB and AlQ are respectively (N, N '-diphenyl-N-N ' two (1-naphthyl)-1,1 ' diphenyl-4,4 '-diamines) and oxine aluminium, preparation according to a conventional method.This moment, light transmittance determined jointly that by gold layer and Sm layer average transmittance is about 40%, and electric conductivity is stable.
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, evaporation CsF, Sm and Au successively, thickness are respectively 1.0,15.0 and 15.0nm.Vacuum degree requires 10
-5More than the holder, material purity is all more than 99.99%, and used bottom electrode substrate is a sheet metal, and its organic luminous layer is NPB (60nm)/AlQ (60nm), according to a conventional method preparation.This moment, light transmittance was about 40%, and electric conductivity is stable.
Embodiment 3, has the liftout optical electrode preparation of Yb/Au composite bed
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, evaporation Yb and Au successively, thickness are respectively 40.0 and 15.0nm, and this is top electrode (negative electrode).Require vacuum degree 10
-6More than the holder, material purity is more than 99.99%, and used bottom electrode is an ito glass, and its organic luminous layer is NPB (60nm)/AlQ (60nm), according to a conventional method preparation.This moment, the light transmittance average transmittance was about 20%, at 520nm higher light transmittance was arranged in the past.
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, evaporation CsF, Yb and Au successively, thickness are respectively 1.0,40.0 and 15.0nm.Vacuum degree requires 10
-6More than the holder, material purity is all more than 99.99%, and used bottom electrode is the Si substrate, and its organic luminous layer is NPB (60nm)/AlQ (60nm), according to a conventional method preparation.This moment, light transmittance was 20%, and electric conductivity is stable.
Embodiment 5, has the liftout optical electrode preparation of CsF/Sm, Yb alloy-layer/Au layer
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, evaporation CsF successively, the alloy of Sm and Yb and Au, thickness are respectively 3.0,5.0 and 15.0nm.Vacuum degree requires 10
-6More than the holder, material purity is all more than 99.99%, and used bottom electrode is the Si substrate, and its organic luminous layer is NPB (60nm)/AlQ (60nm), and Sm and Yb mass ratio are 1: 0.1 in the alloy of Sm and Yb, according to a conventional method preparation.This moment, light transmittance was more than 70%, and electric conductivity is stable.
Embodiment 6, has the liftout optical electrode preparation of composite bed/Au layer of CsF/Sm, Yb alloy and Sm
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, evaporation CsF successively, the alloy of Sm and Yb, Sm and Au, thickness are respectively 0.3,5.0,35.0 and 10.0nm.Vacuum degree requires 10
-6More than the holder, material purity is all more than 99.99%, and used bottom electrode is the Si substrate, and its organic luminous layer is NPB (60nm)/AlQ (60nm), and Sm, Yb mass ratio are 1: 10 in the alloy of Sm and Yb, according to a conventional method preparation.This moment, light transmittance was more than 60%, and electric conductivity is stable.
Claims (6)
1. a liftout optical electrode comprises substrate and the organic luminous layer that is positioned on the substrate, and it is characterized in that: described organic luminous layer is provided with the rare earth element layer that thickness is 5-40nm, and being provided with thickness on described rare earth element layer is the Au layer of 10-15nm.
2. liftout optical electrode according to claim 1 is characterized in that: described rare earth element layer is selected from the Sm layer; The Yb layer; The alloy-layer of Sm and Yb; The composite bed that at least a element forms among the alloy of Sm and Yb and Sm, the Yb.
3. liftout optical electrode according to claim 1 and 2 is characterized in that: also have the CsF layer between described organic luminous layer and the rare earth element layer.
4. liftout optical electrode according to claim 3 is characterized in that: described CsF layer thickness is 0.3-3nm.
5. prepare the method for the described liftout optical electrode of claim 1, comprise the steps: 1) on substrate, prepare organic luminous layer; 2) deposition of rare-earth element layer on described organic luminous layer; 3) plated metal gold on described rare earth element layer.
6. method according to claim 5 is characterized in that: described rare earth element layer is selected from the Sm layer; The Yb layer; The alloy-layer of Sm and Yb; The composite bed that at least a element forms among the alloy of Sm and Yb and Sm, the Yb.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100568321A CN100399865C (en) | 2004-08-23 | 2004-08-23 | A liftout photoelectric pole and producing method thereof |
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| CNB2004100568321A CN100399865C (en) | 2004-08-23 | 2004-08-23 | A liftout photoelectric pole and producing method thereof |
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| CN100399865C true CN100399865C (en) | 2008-07-02 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237270A (en) * | 1997-07-28 | 1999-12-01 | 摩托罗拉公司 | Electron emitter |
| US6281627B1 (en) * | 1999-01-21 | 2001-08-28 | Tdk Corporation | Organic electroluminescent device with a high resistant inorganic electron injecting layer |
| US6703180B1 (en) * | 2003-04-16 | 2004-03-09 | Eastman Kodak Company | Forming an improved stability emissive layer from a donor element in an OLED device |
| US6734622B1 (en) * | 1999-03-24 | 2004-05-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Organic electroluminescent component for an organic light-emitting diode |
| US20040157167A1 (en) * | 2002-12-26 | 2004-08-12 | Seiko Epson Corporation | Manufacturing method of organic electroluminescent device, organic electroluminescent device, and electronic apparatus |
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- 2004-08-23 CN CNB2004100568321A patent/CN100399865C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237270A (en) * | 1997-07-28 | 1999-12-01 | 摩托罗拉公司 | Electron emitter |
| US6281627B1 (en) * | 1999-01-21 | 2001-08-28 | Tdk Corporation | Organic electroluminescent device with a high resistant inorganic electron injecting layer |
| US6734622B1 (en) * | 1999-03-24 | 2004-05-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Organic electroluminescent component for an organic light-emitting diode |
| US20040157167A1 (en) * | 2002-12-26 | 2004-08-12 | Seiko Epson Corporation | Manufacturing method of organic electroluminescent device, organic electroluminescent device, and electronic apparatus |
| US6703180B1 (en) * | 2003-04-16 | 2004-03-09 | Eastman Kodak Company | Forming an improved stability emissive layer from a donor element in an OLED device |
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