CN100399589C

CN100399589C - Wafer with highly efficient heat radiation and brightness

Info

Publication number: CN100399589C
Application number: CNB2004100932483A
Authority: CN
Inventors: 杨秋忠
Original assignee: Individual
Current assignee: Individual
Priority date: 2004-12-17
Filing date: 2004-12-17
Publication date: 2008-07-02
Anticipated expiration: 2024-12-17
Also published as: CN1790754A

Abstract

The present invention relates to a wafer with high-efficient heat radiation and brightness. When an etching of the wafer is made, the area of an etching luminescent layer can be decreased, and larger area of a luminescent layer is reserved to emit light; conductive layers of a P electrode and an N electrode are also paved in the positions of the P electrode and the N electrode, so the increase of the luminous surface and the glistening surface are achieved, the efficiency of heat radiation is enhanced, the present invention has the function an SMD trails an LED without the need of encapsulation, and the encapsulating cost can be reduced.

Description

The wafer of tool high efficiency heat radiation and brightness

Technical field

The invention provides the wafer of a kind of tool high efficiency heat radiation and brightness, can reduce the etching luminescent layer when being mainly the etching of making wafer, and can lay large-area conductive layer at P, N utmost point place, be provided with thus and make its light-emitting area increase, increase conductive area, increase light-emitting area and light-emitting area, improve radiating efficiency, need not encapsulate and just have the effect of SMD with flip LED.

Background technology

As shown in Figure 1, when the wafer of commonly using was made, the N utmost point 1 or the P utmost point 2 had an end (utmost point) that etching 3 is necessarily arranged, and this etching 3 has the action that destroys luminescent layer 4, caused the area of real luminescent layer 4 to reduce, and also just had the problem that brightness is lowered.

In addition, shown in Fig. 2,3, this wafer 5 is quite small, the N utmost point 6, the P utmost point 7 at existing wafer provide the electrode area A at routing 8 places all than big several times, have the problem of obvious minimizing light-emitting area, it is known product (wafer) problem, and general routing area is about 100 μ.

As shown in Figure 2, be the LED wafer solder technology that a kind of SMD method for making is made, its wafer 5 must be reserved routing positions, and by routing with wafer 5 conducting substrates, and be soldered to the PCB wiring board by substrate conducting circuit again.

As shown in Figure 3, the wafer weak heat-dissipating of commonly using, reason is: traditional heat-dissipating is owing to path length L, and S is little for the heat radiation heat-conducting area, so heat conduction is difficult for, high temperature problem is arranged.

As shown in Figure 4, next P, N pole-face that commonly uses wafer is long-pending quite little, only can routing or plant tin ball 9 in advance.

As Fig. 4 is the flip LED manufacturing technology, and its wafer is planted tin ball 9 in advance, its wafer is soldered on the substrate again, can adopt general tin cream to be soldered to the PCB wiring board with metacoxal plate.

Designer of the present invention is engaged in LED wafer and Related product manufacturing industry thereof for many years, know very well the manufacture method and the pluses and minuses thereof of LED wafer, so be devoted to improve its shortcoming, in the hope of making it more practical, through for many years effort research and repeatly for studying, design the present invention finally: the wafer of tool high efficiency heat radiation and brightness.

Summary of the invention

Main purpose of the present invention promptly is to eliminate above-mentioned each shortcoming, and the wafer of a kind of tool high efficiency heat radiation and brightness is provided.

LED wafer of the present invention is when the etching of making wafer, can reduce the etching luminescent layer, increase brightness, it is luminous to keep the large area light emitting layer, and its P, N electrode place lay the connected large-area conduction of one deck (heat conduction) layer, reaching increases light-emitting area and reflective surface, improve radiating efficiency, need not encapsulate and just have the function of SMD, and can be directly weld with the tin cream of general welding manner with flip LED, welding cost can reduce, thereby reduces packaging cost.

Conductive and heat-conductive layer of the present invention can be gold, silver, copper, aluminium, tin, alloy.

Description of drawings

Fig. 1: be the cut-away view of commonly using wafer;

Fig. 2: commonly use the SMD wafer for another and be welded in substrate is welded in the PCB wiring board again by substrate cut-away view;

Fig. 3: for another commonly uses the bottom view of wafer;

Fig. 4: for the another flip chip of commonly using utilizes the tin ball bonding to be welded in the cut-away view of PCB wiring board in substrate and substrate;

Fig. 5: be the cut-away view of the wafer of tool high efficiency heat radiation of the present invention and brightness;

Fig. 6: be the end perspective view of the wafer of tool high efficiency heat radiation of the present invention and brightness;

Fig. 7: be welded in PCB wiring board schematic diagram for the wafer of tool high efficiency heat radiation of the present invention and brightness.

The figure number explanation:

Commonly use part:

1.N the utmost point 2.P utmost point

3. etching 4. luminescent layers

5. the wafer 6.N utmost point

7.P the utmost point 8. routings

9. tin ball

Part of the present invention:

10. the wafer 20.P utmost point

30.N the utmost point 40. conduction materials

50. conduction material 60.PCB wiring board

70. tin cream

Embodiment

The invention provides the chip design of a kind of tool high efficiency heat radiation and brightness.

For enabling further to understand structural design of the present invention and technology, only conjunction with figs. is described in detail as follows:

As shown in Figure 5, the structure of LED wafer of the present invention is:

The one side of its wafer 10 is the tool P utmost point 20 and the N utmost point 30 via etching, lay two large-

area conduction materials

40,50 in the P utmost point 20 with the N utmost point 30 places subsequently, this two large tracts of

land conduction material

40,50 is the conducting P utmost point 20 and the N utmost point 30 respectively, reach magnifying electrode thus, large tracts of land heat conduction, so the tool high efficiency heat radiation, another purposes is that large tracts of land then has the increase reflective surface, need not encapsulate and just have the function of SMD, the minimizing packaging cost with flip LED.

As shown in Figure 6, the wafer of a kind of tool high efficiency heat radiation and brightness, mainly commonly use the general weak heat-dissipating of wafer, so reduce the etching luminescent layer during wafer fabrication, its difference by the difference at Fig. 3 label A and Fig. 6 label B place as can be known, convevtional diagram 3 label A's, be that its position is for routing, so the etching area strengthens, and the present invention need not routing, its etching area reduces in a large number, increases light-emitting area, and lays large-area conduction material 40 in polar surface, 50, the conduction material can be gold, silver, copper, aluminium, tin, alloy, this large-

area conduction material

40,50 have heat conduction and reflecting effect simultaneously, and the heat-conducting effect that increases forward brightness and large tracts of land conductive and heat-conductive material thereof is good, is able to efficiently radiates heat.

The wafer of commonly using itself is quite small, its P, the N utmost point are littler, for following process, all plant gold, silver, tin ball or bonding wire at P, the N utmost point in advance, and tool large tracts of land of the present invention conduction material P, the N utmost point can directly weld, and need not plant gold, silver, tin ball, and need not routing again, save considerable manufacturing, packaging cost and weld time.

As shown in Figure 5, make its wafer basic configuration for the mode multilayer of utilizing laying on the wafer fabrication, utilize etched mode to distinguish P, N polarity again, wherein illustrated P, N utmost point side, can re-lay large-

area conduction material

40,50 when making, so when being fixed in PCB wiring board 60 (as shown in Figure 7), its large-

area conduction material

40,50 can be fixedly welded on PCB wiring board 60 by the tin cream 70 of general welding, quicken production capacity, a large amount of welding manufacturing times of saving.

By as can be known above-mentioned, the wafer of tool high efficiency heat radiation of the present invention and brightness has effect as described below:

1. upside-down mounting and SMD weld wafer, all must increase the step of substrate welding or routing, be welded in the PCB wiring board with general welding again, and the present invention need not substrate and relevant routing or welding thereof, can skip over and directly large tracts of land conduction material position directly general welding be welded in the PCB wiring board, need not encapsulate and just have SMD, can reduce packaging cost with the function of flip LED.

2. the area of etching luminescent layer reduces, and its luminescent layer area is increased, and increases its luminosity.

3. large-area conductive and heat-conductive layer, effectively heat loss through conduction and conductive effect are good to make it, weld simple and easyly, can adopt outside the general welding, and its conductive and heat-conductive layer more can be reflective surface, increases its luminous and reflective brightness effect.

In sum, the present invention has splendid progressive practicality in like product, also finds no the identical construction existence formerly all over looking in domestic and international technical data about this class formation, the document simultaneously.

The foregoing description only in order to illustrate the present invention, not in the present invention's spirit scope, is known various distortion, modification and application that this operator does according to the present invention thus, all should belong to category of the present invention.

Claims

1. the wafer of tool high efficiency heat radiation and brightness is characterized in that this wafer P, N electrode place respectively set up the large tracts of land conductive and heat-conductive layer of one deck and its binding.

2. the wafer of tool high efficiency heat radiation as claimed in claim 1 and brightness is characterized in that the conductive and heat-conductive layer can be gold, silver, copper, aluminium, tin.