CN100399531C

CN100399531C - Silicon chip in special construction, its use, and preparation method

Info

Publication number: CN100399531C
Application number: CNB2005101100084A
Authority: CN
Inventors: 徐开勤; 陈春晖
Original assignee: Shanghai Hua Hong NEC Electronics Co Ltd
Current assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date: 2005-11-03
Filing date: 2005-11-03
Publication date: 2008-07-02
Anticipated expiration: 2025-11-03
Also published as: CN1959949A

Abstract

Besides silicon substrate, the disclosed silicon wafer with special construction possesses structure of two film layers: oxide film and silicon nitride. OX film structure is placed between silicon substrate and silicon nitride. The silicon wafer can be applicable to piece of block and control i.e. as filling piece, and silicon wafer for monitoring manufacturing process in technique of monitoring fabrication of semiconductor. Method for preparing silicon wafer includes steps: first, using furnace tube or chemical vapor deposition (CVD) method develops structure of OX film on silicon base plate, and thickness of film is 50-500 A; then using furnace tube or CVD method develops structure of silicon nitride film, and thickness of film is 500-3000 A. in the invention, silicon wafer is not influenced by environment easily so as to prolong service life of piece of block and control, and guarantee precision of measuring grains, and monitoring procedure. Cost of production is also reduced.

Description

A kind of silicon chip of special construction

Technical field

The present invention relates to a kind of silicon chip, its Use and preparation method, relate in particular to silicon chip of a kind of special construction and preparation method thereof, it can use as retaining control sheet in semiconductor fabrication.

Background technology

Retaining control sheet all is to use mating plate usually in the monitoring process of semiconductor manufacturing at present, if service time, mating plate of a specified duration surface was just contaminated easily, causes the error of particle inspection; On the other hand, after mating plate used, the surface can little by little form a lot of little defectives, can cause a lot of interference for the monitoring of 0.20um and following defective, also can cause the very mistake of measurement.And at present for 0.13/0.09um technology, the following defective of 0.20um is vital.To this problem, solution now is a predicament always, otherwise with shorten in useful life of mating plate get in return measurement accurately, or sacrifice the accuracy of measuring and the useful life of keeping mating plate; And the former can significantly increase cost, and the latter can impact the accuracy of production control.

Summary of the invention

The technical problem to be solved in the present invention provides a kind ofly can make silicon chip that monitoring process uses as retaining control sheet and preparation method thereof at semiconductor, and this silicon chip has special construction, can guarantee to reduce production costs the accuracy measured.

For solving the problems of the technologies described above, the silicon chip of special construction of the present invention is except that having silicon substrate, also on silicon substrate, has oxide-film (Oxidation, OX) and silicon nitride (SiN) two-layer film configuration, wherein the OX membrane structure places between silicon substrate and the silicon nitride, the thickness of oxide-film be 200 dusts to 500 dusts, the thickness of silicon nitride film is that 500 dusts are to 1000 dusts, this silicon chip can be applicable to semiconductor and makes conduct retaining control sheet in the monitoring process, promptly is used as the silicon chip of filler piece and processing procedure monitoring.

Compared with prior art, silicon chip among the present invention is owing to adopt the Si-OX-SiN three-decker, and the big hardness of SiN film, be not vulnerable to the influence of environment and produce a lot of pollutions and interference, can prolong the accuracy that retaining is controlled the useful life of sheet and guaranteed particle sizing, and finally improve the accuracy that semiconductor is made monitoring process, reduce production costs.

Description of drawings

Fig. 1 is silicon chip of the present invention and the comparison schematic diagram that is used as the silicon chip of mating plate usually;

Fig. 2 is a silicon chip preparation method's of the present invention schematic diagram.

Embodiment

The present invention is further detailed explanation below in conjunction with accompanying drawing.

As shown in Figure 1, be the silicon chip of special construction of the present invention and the comparison schematic diagram that is used as the silicon chip of mating plate usually.The common silicon chip as mating plate only has the silicon substrate single layer structure, and silicon chip of the present invention also has OX and silicon nitride two-layer film configuration on silicon substrate, and wherein the OX membrane structure places between silicon substrate and the silicon nitride.

As shown in Figure 2, be silicon chip preparation method's of the present invention schematic diagram, comprise two steps: one, on silicon substrate, at first adopt boiler tube or chemical vapour deposition technique (as plasma enhanced chemical vapor deposition, PE-CVD) growth OX; Two, on the OX film that step 1 generates with boiler tube or chemical vapour deposition technique, growth SiN.According to the test gained, growth OX thickness can be from 50 dusts to 500 dusts in the step 1; Growth SiN thickness can be from the 500-3000 dust in the step 2.Need point out the generation method of concrete OX and SiN in addition, should produce, advise using boiler tube production by the optimum embodiment of the present invention according to actual production capacity; The thickness of OX and SiN also should advise that by the optimum embodiment of the present invention the OX thickness is 200 dusts according to actual production capacity flexible simultaneously, and the SiN thickness can be from the 500-1000 dust.

Above-mentioned silicon chip can be made monitoring process at semiconductor and use as retaining control sheet, promptly make the silicon chip of general filler piece (dummy) and processing procedure monitoring (monitor), comprise particle inspection, rate of film build, etch rate, corrosion rate, film forming thickness, photoresist and BARC thickness etc.

In sum, the present invention can 1, reduce cost: compare usually as the silicon chip of mating plate, silicon chip of the present invention is owing to have harder SiN membrane structure, be not easy to be subjected to the damage of foreign particle and the erosion of general solution, even some pollutions are arranged, also can remove, and have any influence hardly by scouring.Therefore, thus the retaining control sheet of this structure can use for a long time and significantly reduces cost.2, improve the accuracy of particle detection: the SiN film of silicon chip of the present invention is not vulnerable to the influence of environment and forms small defective, therefore greatly reduces the interference to particle detection of blemish, has improved the accuracy of particle detection.

Claims

1. the silicon chip of a special construction has silicon substrate, it is characterized in that, has oxide-film and silicon nitride two-layer film configuration on described silicon substrate, and wherein said oxide-film structure places between silicon substrate and the silicon nitride, and described thickness of oxidation film is that 200 dusts are between 500 dusts; The silicon nitride thickness be 500 dusts between 1000 dusts, the silicon chip of described special construction is applied to semiconductor and makes in the monitoring process as retaining control sheet, promptly as the silicon chip of filler piece and processing procedure monitoring.