CN100390968C - Cover glass for semiconductor package and method for producing same - Google Patents
Cover glass for semiconductor package and method for producing same Download PDFInfo
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- CN100390968C CN100390968C CNB2004800040982A CN200480004098A CN100390968C CN 100390968 C CN100390968 C CN 100390968C CN B2004800040982 A CNB2004800040982 A CN B2004800040982A CN 200480004098 A CN200480004098 A CN 200480004098A CN 100390968 C CN100390968 C CN 100390968C
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- 239000006059 cover glass Substances 0.000 title claims abstract description 126
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000011521 glass Substances 0.000 claims abstract description 130
- 230000003746 surface roughness Effects 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 40
- 239000000203 mixture Substances 0.000 claims description 34
- 230000005260 alpha ray Effects 0.000 claims description 28
- 239000007787 solid Substances 0.000 claims description 25
- 238000003280 down draw process Methods 0.000 claims description 23
- 238000004806 packaging method and process Methods 0.000 claims description 23
- 230000004927 fusion Effects 0.000 claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 229910052776 Thorium Inorganic materials 0.000 claims description 13
- 229910052770 Uranium Inorganic materials 0.000 claims description 13
- 239000003513 alkali Substances 0.000 claims description 12
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 12
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 12
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000007791 liquid phase Substances 0.000 description 24
- 239000005357 flat glass Substances 0.000 description 22
- 238000004031 devitrification Methods 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000012545 processing Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 238000000227 grinding Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229910006404 SnO 2 Inorganic materials 0.000 description 6
- 239000006025 fining agent Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 229910000640 Fe alloy Inorganic materials 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
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- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
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- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
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- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
A cover glass for semiconductor packages (10) is a glass sheet comprising a first transparent face (10a) and a second transparent face (10b) which are opposite to each other in the thickness direction and a lateral surface (10c) constituting the sides of the glass sheet. The cover glass (10) has dimensions of 14 x 16 x 0.5 mm. The first transparent face (10a) and the second transparent face (10b) are unpolished surfaces, and respectively have a surface roughness (Ra) of not more than 0.5 nm.
Description
Technical field
The present invention relates to be installed on the semiconductor package body (package) of taking in solid photographic device or laser diode the front, protection solid photographic device or laser diode and be used as cover glass for semiconductor package and the manufacture method thereof that light inlet window uses.
Background technology
In the front of solid photographic device, in order to protect semiconductor element, be equipped with cover glass with flat transparent surface.This cover glass is used the adhesives sealing of being made by various organic resins or low-melting glass and is bonded on the packaging body of being made by ceramic material such as aluminium oxide or metal material or resin material; be accommodated in the solid photographic device of the inside of packaging body with protection, and play a role as the light inlet window of visible light etc.
As solid photographic device, in the photosemiconductor that uses mostly, CCD (ChargeCoupled Device) or CMOS (Complementary Metal Oxide Semiconductor) are arranged now.Though CCD mainly is equipped in the video camera in order to obtain high meticulous image, in recent years,, thereby utilize scope to enlarge rapidly owing to the accelerated development that utilizes of the data processing of image.Particularly, it is equipped in digital camera or the portable phone, for the image transitions that height is meticulous is electronic information data and being used more.In addition, CMOS also is known as CMOS (Complementary Metal Oxide Semiconductor), because comparing with CCD can miniaturization, consumed power also is reduced to about 1/5th, can also utilize the manufacturing process of microprocessor in addition, therefore have that expense can not increase in equipment investment, advantage such as can make at an easy rate, be equipped on more in the image input device of portable phone or small personal computers and so on gradually.
CCD or CMOS be owing to need correctly be converted to electronic information with image, and therefore the cover glass that uses therein is provided with strict standard for adhering to of its lip-deep dirt or damage, foreign matter etc., requires high-grade cleanliness factor.In addition, except the cleanliness factor on surface, also require not have bubble, texture, crystal etc., prevent sneaking into of foreign matters such as platinum in glass inside.In addition, in order to seal bondingly well, also require to have the thermal coefficient of expansion approximate with package material with various packaging body.In addition, this kind glass is not in order to reduce in long-time inner surface quality grade, also is required aspect weatherability goodly, for can lightweight, requires density lower in addition.
In addition, in the CCD purposes, when in cover glass, containing as radioisotopic U (uranium) or Th (thorium), just be easy to from glass, radiate alpha ray, when its exit dose more for a long time owing to can cause soft error (soft error), therefore require not contain as far as possible U, Th.Thus, when making the CCD cover glass, take to use high-purity raw, the inwall of the fusion tank of fused raw material countermeasure such as is made with few refractory body of radioisotope or platinum.For example, in following patent documentation 1～3, propose to have the solid photographic device packaging body that has reduced radioisotope, reduced the alpha ray exit dose scheme of cover glass.
Patent documentation 1: specially permit communique No. 2660891
Patent documentation 2: the spy opens flat 6-211539 communique
Patent documentation 3: the spy opens flat 7-215733 communique
As mentioned above, the solid photographic device packaging body, and increases because the widening of purposes, expansion that view data is utilized hastily with the use amount of cover glass.But solid photographic device packaging body is in the past used cover glass owing to use method manufacturing as described below, so the surface quality rank difference, is unsuitable in addition producing in enormous quantities.That is, when making solid photographic device packaging body is used cover glass, at first with frit fusion in fusion tank, carrying out the deaeration texture to remove after homogenizing, glass melts is added mould and castable is perhaps pulled out glass melts continuously on extended plate, make given shape.Then, after making slowly cooling of the glass shaping body of gained (glass ingot), being cut into certain thickness,, its cut-out is processed as intended size by the big sheet glass that attrition process forms given thickness is implemented on its surface.Like this, though the solid photographic device packaging body all is implemented attrition process with the transparent surface two sides of cover glass,, will form countless fine concavo-convex (microlesion) on the surface owing to be implemented grinding.On the other hand, solid photographic device is realized high pixelization, miniaturization just gradually in recent years, accompany with it, the tendency that the light income minimizing of each element is just arranged, but because of the film that sees through to cover glass grinds form fine concavo-convex and will make the easy scattering of incident light, the light income deficiency of the element of a directive part consequently, probably produces misoperation in element.
In addition, the solid photographic device packaging body ought have been sneaked into foreign matter or bubble with cover glass in glass, or in surface attachment during dust etc., just can't obtain good display image, because this can become fatal defects as cover glass, therefore before selling cover glass, must carry out the image inspection.But, as mentioned above, owing on the transparent surface of cover glass, be formed with countless fine concavo-convex, therefore carrying out in image checks, because concavo-convex on the transparent surface of cover glass, irradiates light reflects, and very dark part the situation about having or not that can't correctly detect foreign matter or dust will be arranged thereby mix to have the part that looks very bright and to look.
In addition, though, can make concavo-convex littler by the transparent surface of cover glass being implemented very accurate and long attrition process, but, this kind precise finiss is unsuitable for producing in enormous quantities, in order to tackle rapid increase in demand, just need increase equipment significantly.In addition, though this precise finiss processing is to utilize the spin finishing processing machine that has possessed dermatine, when automatically supplying with the slip that in water etc., has disperseed free abrasives such as cerium oxide, carry out, enter among the dermatine but have the glass powder that produces because of grinding, form the situation of jut in the part of dermatine.The jut that is somebody's turn to do the dermatine that is formed by glass powder can cut the surface of cover glass when grinding, thereby becomes the reason that forms groove partly.In addition, therefore this kind groove is checked in the operation and can be missed at the image that utilizes e-machine sometimes owing to have than broad, shallow shape, when this kind cover glass is equipped on the solid camera head, will present black streaking in display image.And in the cerium oxide that uses as free abrasive, contain Th as impurity, after grinding, if can not will remove fully attached to the cerium oxide on the cover glass, it also might become the alpha ray source.
The grinding of the productive precision of aforesaid infringement or because of grind produce to the harmful effect of solid photographic device characteristic as long as implement to grind, will become unavoidable problem to a certain extent.
Summary of the invention
The present invention finishes in view of described situation, and its purpose is, makes the transparent surface of cover glass for semiconductor package level and smooth by not grinding, and eliminates to be accompanied by and grinds the variety of issue that produces.
The feature of the cover glass for semiconductor package of finishing in order to solve described technical problem of the present invention is, transparent surface is non-abradant surface, and its surface roughness (Ra) is below 1.0nm.Here, " Ra " is the arithmetic average roughness (arithmetical meanroughness) by JIS B0601-1994 definition.
In addition, the feature of cover glass for semiconductor package of the present invention is, formed by the glass tube down-drawing or (float) method of floating, and the surface roughness of transparent surface (Ra) is below 1.0nm.
In addition, the feature of cover glass for semiconductor package of the present invention is that % represents with quality, contains SiO
2: 52～70%, Al
2O
3: 5～20%, B
2O
3: 5～20%, alkaline-earth metals oxide: 4～30%, the basic composition of ZnO:0～5%, do not contain alkali metal oxide in fact, the mean thermal expansion coefficients in 30～380 ℃ temperature range is 30～85 * 10
-7/ ℃, the glass viscosity under the liquidus temperature is 10
5.2More than the dPas.
In addition, the feature of cover glass for semiconductor package of the present invention is that % represents with quality, contains SiO
2: 58～75%, Al
2O
3: 0.5～15%, B
2O
3: 5～20%, alkali metal oxide: 1～20%, alkaline-earth metals oxide: 0～20%, the basic composition of ZnO:0～10%, the mean thermal expansion coefficients in 30～380 ℃ temperature range are 30～85 * 10
-7/ ℃, the glass viscosity under the liquidus temperature is 10
5.2More than the dPas.
In addition, the feature of the manufacture method of cover glass for semiconductor package of the present invention is, drops into frit in the fusion tank that inwall is formed by refractory body at least, after the fusion, utilizes glass tube down-drawing or unsteady method to be configured as tabular.
Cover glass for semiconductor package of the present invention is because transparent surface is non-abradant surface, its surface roughness (Ra) is below 1.0nm, therefore just can suppress the misoperation of the element that causes by the incident scattering of light, can in the image inspection, correctly detect having or not of foreign matter or dust etc. in addition, thereby can prevent that the such demonstration of similar black streaking is bad.And, grind and cut the attrition process operation owing to can omit precision, therefore can produce in enormous quantities at an easy rate, in addition,, do not use free abrasive owing to do not need to grind, therefore just can prevent the Alpha-ray radiation that causes by cerium oxide.
In addition, according to the manufacture method of cover glass for semiconductor package of the present invention, can make easily that the platinum pit is few, transparent surface is non-abradant surface, the cover glass for semiconductor package of surface roughness (Ra) below 1.0nm.
Description of drawings
Fig. 1 is the stereogram of the cover glass for semiconductor package among the expression embodiment.
Fig. 2 is the key diagram that expression utilization is overflowed the method for glass tube down-drawing shaping plate glass.
Fig. 3 is that expression utilizes laser scriber big sheet glass to be cut off the key diagram of method for processing.
Embodiment
The transparent surface of cover glass for semiconductor package of the present invention is non-abradant surface, and its surface roughness (Ra) is below 1.0nm.The cover glass that this kind surface quality grade is high can utilize glass tube down-drawing or unsteady method to be shaped.As glass tube down-drawing, though be suitable for glass tube down-drawing or the slot draw method of overflowing, but particularly for the situation of overflowing glass tube down-drawing, because glass surface is a Free Surface, do not contact with other member, by control melting condition or molding condition, just can obtain to have required wall thickness (for the situation of cover glass for semiconductor package be 0.05～0.7mm), the good glass sheet of surface smoothing, therefore preferably.Promptly, when glass tube down-drawing is overflowed in employing, obtain level and smooth surface owing to can not carry out attrition process ground to surface (transparent surface), therefore just can not form the microlesion that causes by grinding, make surface roughness (Ra) below the 1.0nm, preferably below the 0.5nm, the more preferably cover glass below the 0.3nm.Like this, (Ra) is more little for the surface roughness of the transparent surface of cover glass, and then the incidence of the misoperation of the element that is caused by the scattered light of the transparent surface of cover glass is just low more, and it is just high more to detect the precision that the image of foreign matter etc. checks in addition.And surface roughness (Ra) is the amount of the grade of presentation surface flatness, can measure based on the experimental technique of JIS B0601 by using.
In addition, as unsteady method, can use with melten glass in the metal tin bath from reducing atmosphere to fusion on supply with and be configured as tabular method, on supporter, supply with melten glass and make supporter and the glass folder slide mutually every the thin layer that vapor film is formed the vapor film that agent gasified be configured as tabular method (with reference to the spy open flat 9-295819 communique, the spy opens 2001-192217 communique etc.).And therefore the cover glass that is shaped with the float method also can implement attrition process as required owing to compare poorer aspect the surface quality grade with the cover glass made from glass tube down-drawing.But, under this situation, also should shorten milling time as far as possible and reduce productive reduction, in addition, also should reduce as far as possible because of grinding the harmful effect that produces to the solid photographic device characteristic.
In addition, the viscosity (liquid phase viscosity) of the glass of cover glass for semiconductor package of the present invention under liquidus temperature is 10
5.2When dPas is above, in glass, just be difficult to produce the devitrification thing, thus can
To utilize the shaping of glass tube down-drawing.That is, as the SiO that is shaped with glass tube down-drawing
2-Al
2O
3-B
2O
3-RO (or R
2O) during the class glass substrate, the viscosity of the glass in the shaped portion is about as much as 10
5.0DPas.Thus, when the liquid phase viscosity of glass 10
5.0Near the dPas or below it the time, just in the glass that has been shaped, produce the devitrification thing easily.When in glass, producing the devitrification thing,, therefore just can't use as cover glass because light transmission is compromised.Like this, when with down-draw method molding glass, the liquid phase viscosity of glass is high more good more, and as cover glass for semiconductor package, liquid phase viscosity need be 10
5.2More than the dPas.Liquid phase viscosity preferred 10
5.4More than the dPas, more preferably 10
5.8More than the dPas.
In addition, cover glass for semiconductor package of the present invention is by being made as 30～85 * 10 with the mean thermal expansion coefficients in 30～380 ℃ the temperature range
-7/ ℃, even use adhesives and the aluminium oxide packaging body of making by organic resin or low-melting glass (about 70 * 10
-7/ ℃) or various resin-encapsulated body sealing bonding, can not produce distortion in inside yet, can keep good sealing adhering state for a long time.The preferred thermal coefficient of expansion of cover glass is 35～80 * 10
-7/ ℃, preferred thermal coefficient of expansion is 50～75 * 10
-7/ ℃.
In addition, cover glass for semiconductor package of the present invention is by being restricted to 0.01c/cm with the alpha ray exit dose
2Below the hr, just can realize the minimizing of the soft error of the solid photographic device that causes by alpha ray.Like this, for the alpha ray exit dose is made as 0.01c/cm
2Below the hr, preferably prevent from the amount of the U in the glass to be suppressed at below the 10ppb, the Th amount is suppressed at below the 20ppb from the sneaking into of the impurity of raw material or fusion tank.Solid photographic device owing to be accompanied by high pixelization, miniaturization is easy to generate the soft error that is caused by alpha ray, so the alpha ray exit dose of cover glass preferably is made as 0.005c/cm
2Below the hr, more preferably be made as 0.003c/cm
2Below the hr.In addition, the U amount preferably is made as below the 5ppb, and the Th amount preferably is made as below the 10ppb, more preferably the U amount is made as below the 4ppb, and the Th amount is made as below the 8ppb.And, owing to U compares with Th, the easier alpha ray that radiates, so the tolerance of U is compared still less with the tolerance of Th.
In addition, cover glass for semiconductor package of the present invention when the density of glass be 2.55g/cm
3Below (preferred 2.45g/cm
3Below), when the alkali stripping quantity is 1.0mg following (below the preferred 0.1mg, more preferably 0.01mg is following), just is specially adapted to be equipped on carrying of using in the room outside and uses in the e-machine.That is, therefore video camera, numeric type camera, portable phone, PDA machines such as (Personal Digital Assistant) are required light weight and are suitable for gripping to move owing to use without, have high weather resistance.So the solid photographic device encapsulation that is used for these purposes uses cover glass except the characteristic of light weight, also must have following characteristic simultaneously, promptly, have stable weatherability, even too harsh without environment uses down, the surface quality grade can not reduce yet.Thus, particularly be used for the cover glass of this purposes, preferably coming lightweight, or improving weatherability by reducing the alkali stripping quantity by the density that reduces glass.
In addition, the preferred 0.05～0.7mm of the wall thickness of cover glass for semiconductor package of the present invention.Because wall thickness is big more, then transmitance is just low more, and the lightweight of machine in addition, slimming are just difficult more, therefore not ideal enough.In addition, cross when thin when wall thickness, practical intensity will be not enough, or the bending of big sheet glass becomes big and is difficult to and handles.Preferred wall thickness is 0.1～0.5mm, and further preferred wall thickness is 0.1～0.4mm.
In addition, more than the preferred 65GPa of the Young's modulus of cover glass for semiconductor package of the present invention, more preferably more than the 67GPa.Young's modulus is illustrated in easy deformation is to which kind of degree under the state that cover glass has been applied in certain external force, and Young's modulus is big more, and then cover glass just is difficult to distortion more.The Young's modulus of cover glass is high more, then just can prevent to apply on semiconductor element direct pressure, and the result just can prevent damage of elements.
In addition, cover glass for semiconductor package of the present invention is worked as the specific Young's modulus (Young's modulus/density) of cover glass at 27GPa/gcm
-3When above, because therefore the characteristic that can satisfy light weight and be difficult to be out of shape is particularly suitable for as the solid photographic device cover glass that is used for carrying with e-machine.From then on plant viewpoint and consider that solid photographic device is the bigger the better with the specific Young's modulus of cover glass, preferred 28GPa/gcm
-3More than.
In addition, cover glass for semiconductor package of the present invention when Vickers hardness 500 when above owing to be difficult to add damage from the teeth outwards, therefore preferred.Its reason is, when forming small damage on the surface in the assembling procedure of e-machine or conveyance operation at cover glass, the image after on being equipped on solid photographic device check will become in the operation bad.Preferred Vickers hardness is more than 520.
Among the present invention, particularly when considering weatherability, preferably represent, contain SiO with quality %
2: 52～70%, Al
2O
3: 5～20%, B
2O
3: 5～20%, alkaline-earth metals oxide: 4～30%, the basic composition of ZnO:0～5%, do not contain the cover glass of alkali metal oxide in fact.Have this kind composition cover glass since the alkali stripping quantity therefore less than 0.01mg, even have the good advantage of using appearance ratings also can not reduce for a long time in weatherability aspect.And what is called " not containing in fact " is meant that the content of this composition is less than 2000ppm among the present invention.In addition, the alkali stripping quantity can be measured based on the experimental technique of JIS R3502 by using.
The qualification reason of each composition of described formation cover glass is described as follows.
SiO
2Be the principal component that becomes the skeleton that constitutes glass, though producing effect aspect the weatherability that improves glass, served as for a long time, the high temperature viscosity of glass will rise, and meltbility worsens, and liquid phase viscosity has the tendency that uprises.Thus, SiO
2Content be 52～70%, preferred 53～67%, more preferably 55～65%.
Al
2O
3Though be to improve the weatherability of glass and the composition of liquid phase viscosity, served as for a long time, the high temperature viscosity of glass rises, and meltbility has the tendency of deterioration.Thus, Al
2O
3Content be 5～20%, preferred 8～19%, more preferably 10～18%.
B
2O
3Be to play a role as flux, reduce glass viscosity, improve the composition of meltbility.In addition, be the composition that is used to improve liquid phase viscosity.But, work as B
2O
3In the time of too much, the weatherability of glass has the tendency of reduction.Thus, B
2O
3Content be 5～20%, preferred 6～15%, more preferably 7～13%.
Alkaline-earth metals oxide (MgO, CaO, SrO, BaO) be improve the weatherability of glass and reduce glass viscosity, improve the composition of meltbility, but served as for a long time, glass is devitrification easily just, and density has the tendency of rising.Thus, the content of alkaline-earth metals oxide is 4～30%, and is preferred 5～20%, more preferably 6～16%.
Particularly CaO becomes more readily available high-purity raw, is the composition that significantly improves glass melting and weatherability.When the content of CaO less than 1.5% the time, described effect is little, on the contrary, when surpassing 15%, weatherability just reduces.In order to realize more stable grade, the content of CaO is preferred 2～12%, and more preferably 3～10%.
In addition, therefore BaO and SrO in the time will reducing density, preferably are restricted to content separately below 12%, below 10% because the density of glass is significantly risen, and preferably both content are represented to be restricted to 6.5～13% with total amount in addition.In addition, therefore BaO and SrO in the time will reducing the alpha ray exit dose, should represent both content to be restricted to below 8.5% with total amount owing to contain radioisotope easily in raw material, preferably are restricted to below 3%, more preferably are restricted to below 1.4%.
Though ZnO has the glass melting of improvement, suppress B
2O
3Or the alkaline-earth metals oxide effect of from melten glass, volatilizing, but ought contain in a large number sometimes, because the easy devitrification of glass, density rises, and is therefore not ideal enough.So, be limited on its content below 5%, preferred below 3%, more preferably below 1%.
But, when containing alkali metal oxide (Na
2O, K
2O, Li
2O) time, owing to increasing from the alkali stripping quantity in the glass, weatherability reduces, and therefore preferably its content being suppressed is less than 0.2%.In order to realize more stable weatherability, preferably the content inhibition with alkali metal oxide is less than 0.1%, and more preferably suppressing is less than 0.05%.
In addition, the alkali metal oxide in glass can suppress to be used for its sealing is bonded in the advantage of the ageing of binders on the packaging body more in addition.That is, though the solid photographic device packaging body uses organic resin (for example epoxy resin) next bonding with cover glass more, when containing the alkali composition in cover glass, alkali becomes branch's stripping in binding agent lentamente.Organic resins such as epoxy resin are owing to have the character that the influence because of the alkali composition reduces cementability, so the adhesive strength between cover glass and the packaging body just is easy to slowly reduce.Consequently, between produces the gap, or cover glass peels off, and can not bring into play the situation of protecting the so desirable purpose of solid photographic device thereby have.
In addition, in the present invention, when considering the problem of manufacture view, preferably represent, contain SiO with quality %
2: 58～75%, Al
2O
3: 0.5～15%, B
2O
3: 5～20%, alkali metal oxide: 1～20%, alkaline-earth metals oxide: 0～20%, the cover glass of the basic composition of ZnO:0～10%.Cover glass meltbility with this kind composition improves, and carries out the adjustment of liquid phase viscosity easily.
The qualification reason of each composition of described formation cover glass is described as follows.
SiO
2Be the principal component that becomes the skeleton that constitutes glass, though producing effect aspect the weatherability that improves glass, served as for a long time, the high temperature viscosity of glass will rise, and meltbility worsens, and liquid phase viscosity has the tendency that uprises.Thus, SiO
2Content be 58～75%, preferred 58～72%, more preferably 60～70%, most preferably 60～68.5%.
Al
2O
3Though be the composition essential in order to improve liquid phase viscosity, served as for a long time, the high temperature viscosity of glass rises, and meltbility has the tendency of deterioration.Thus, Al
2O
3Content be 0.5～15%, preferred 1.1～12%, more preferably 3.5～12%, most preferably 6～11%.
B
2O
3Be to play a role as flux, reduce glass viscosity, improve the composition of meltbility.In addition, be the composition that is used to improve liquid phase viscosity.But, work as B
2O
3In the time of too much, the weatherability of glass has the tendency of reduction.Thus, B
2O
3Content be 5～20%, preferred 9～18%, more preferably 11～18%, most preferably 12～18%.
Alkali metal oxide (Na
2O, K
2O, Li
2O) though be the viscosity that reduces glass, improve meltbility and adjust the composition of thermal coefficient of expansion and liquid phase viscosity effectively, ought contain in a large number sometimes, the weatherability of glass is understood remarkable variation.Thus, the content of alkali metal oxide is 1～20%, and is preferred 5～18%, more preferably 7～13%.
Na particularly
2O, the effect of adjusting thermal coefficient of expansion is big, in addition K
2The effect that O improves liquid phase viscosity is big.Thus, when with Na
2O and K
2O and time spent, just can when keeping high liquid phase viscosity, adjust thermal coefficient of expansion.Thus, Na
2The content of O is preferred 0.1～11%, K
2The content of O is preferred 0.1～8%, when with both and time spent, preferably represent to contain 7.6～18% with total amount in addition.
Among the present invention, when with (Na
2O+K
2O)/Na
2When the ratio of O limits according to the mode that reaches 1.1～10, just obtain high liquid phase viscosity easily.Should (Na
2O+K
2O)/Na
2The ratio of O is preferred 1.1～5, and more preferably 1.2～3.
In addition, among the present invention, reduce SiO more
2, increase Al
2O
3And K
2O, then liquid phase viscosity just has the tendency of rising more, when with SiO
2/ (Al
2O
3+ K
2When ratio O) limits according to the mode that reaches 3～12, preferred 4～10, then can in the weatherability of keeping glass and meltbility, obtain high liquid phase viscosity.
But, because Li
2Therefore O contains radioisotope easily in raw material, its content should be restricted to 0～5%, and is preferred 0～3%, and more preferably 0～1%, most preferably 0～0.5%.
Alkaline-earth metals oxide (MgO, CaO, SrO, BaO) be improve the weatherability of glass and reduce glass viscosity, improve the composition of meltbility, but served as for a long time, glass is devitrification easily just, and density has the tendency of rising.Thus, the content of alkaline-earth metals oxide is 0～20%, and is preferred 0.5～18%, more preferably 1.0～18%.
Particularly CaO becomes more readily available high-purity raw, significantly improves the composition of glass melting and weatherability.Preferably contain 0.5～10%, more preferably contain 1～8%.But therefore BaO and SrO in the time will reducing density, preferably represent their content to be limited in below 13% with total amount because the density of glass is risen, preferred below 10%, more preferably below 7%.In addition, therefore BaO and SrO work as and the alpha ray exit dose will be reduced to 0.01c/cm owing to contain radioisotope easily in raw material
2When hr is following, preferably content separately is limited in below 3%, more preferably is restricted to below 1.4%.
The effect of ZnO aspect the raising weatherability is good, also has the glass melting of improvement in addition, suppresses B
2O
3Or the bases metal oxide effect of from melten glass, volatilizing.Particularly at Al
2O
3Content under the situation below 3% because the significantly reduced tendency of weatherability arranged, therefore preferably contain more than 2%, more preferably contain the ZnO more than 4.5%.But when containing ZnO in a large number, because the easy devitrification of glass, density rises in addition, thus the content of ZnO should to suppress be below 10%, preferred below 9%, more preferably below 6%.
In addition, among the present invention, except described composition, can also in the scope of the characteristic of not damaging glass, contain the P below 5%
2O
5, Y
2O
3, Nb
2O
3, La
2O
3Deng composition, or contain 3% various fining agents at the most.As fining agent, can use Sb
2O
3, Sb
2O
5, F
2, Cl
2, C, SO
3, SnO
2Or more than a kind or 2 kinds of the metal dust of Al, Si etc.
As
2O
3Owing to can in very wide temperature province (about 1300～1700 ℃), produce clarification gas, so be widely used as the fining agent of the glass of this kind all the time, still in raw material, contain radioisotope easily.And, As
2O
3Toxicity is very strong, might contaminated environment when the processing of the manufacturing process of glass or cullet etc.Thus, As
2O
3Should not contain in fact.In addition, therefore PdO, CdO should avoid using because toxicity is also very strong.In addition, Sb
2O
3, Sb
2O
5Also with As
2O
3Identical, be the good composition of clarifying effect, but, therefore preferably do not contain as far as possible still because toxicity is very strong.
Thus, for the SiO among the present invention
2-Al
2O
3-B
2O
3The situation of-RO class glass is as fining agent, preferably according to making Sb
2O
3And Sb
2O
5With total amount represent to reach 0.05～2.0%, F
2, Cl
2, SO
3, C, SnO
2With the total amount (Cl particularly that represents to reach 0.1～3.0%
2: 0.005～1.0%, SnO
2: the mode of ratio 0.01～1.0%) is used.In addition, for SiO
2-Al
2O
3-B
2O
3-R
2The situation of O class glass is because meltbility is good, therefore preferably according to making Sb
2O
3And Sb
2O
5With total amount represent to reach below 0.2%, F
2, Cl
2, SO
3, C, SnO
2The mode of representing to reach 0.1～3.0% ratio with total amount contains.
In addition, though Fe
2O
3Also can be used as fining agent and use, but owing to can make glass coloring, so its content should be restricted to below the 500ppm, below the preferred 300ppm, more preferably below the 200ppm.CeO
2Use though also can be used as fining agent, owing to can making glass coloring, so its content should be restricted to below 2%, and is preferred below 1%, more preferably below 0.7%.TiO
2Though have the weatherability of improving glass, the effect that reduces high temperature viscosity, owing to can encourage by Fe
2O
3That causes is painted, and therefore the words that contain in a large number are unfavorable.But, if Fe
2O
3Below 200ppm, then can make it to contain 5% at the most.ZrO
2Though be the composition that improves weatherability, owing to containing radioisotope easily in raw material, so its content should be restricted to 0～2%, and is preferred 0～0.5%, more preferably below the 500ppm.
Cover glass for semiconductor package of the present invention is by when having described basic composition, adopts high-purity raw and by the fusion environment of preparing according to the mode that is difficult to sneak into impurity, just can critically control U, Th, Fe
2O
3, PbO, TiO
2, MnO
2, ZrO
2Deng content.Particularly for meeting near the Fe that impacts of transmitance the ultraviolet ray
2O
3, PbO, TiO
2, MnO
2, can control with 1～100ppm magnitude respectively, U, Th for the reason of the soft error that becomes the CCD element that is caused by alpha ray can control with the magnitude of 0.1～10ppb respectively.And, though CCD easily because of alpha ray causes soft error, preferably will be made as less than 0.005c/cm from the alpha ray exit dose of cover glass now
2H, but, be difficult to cause the soft error that causes by alpha ray for the situation of CMOS, if from the alpha ray exit dose of cover glass less than 0.5c/cm
2H just can use.So, making CMOS, not necessarily using high-purity raw with under the situation of cover glass, U, the Th when also not needing to reduce fusion in addition sneaks into.
Below, as an example of manufacture method of the present invention, the method for making the few cover glass for semiconductor package of alpha ray exit dose is described.
At first, have the mode of the glass of required composition, prepare the frit temper according to formation.Frit uses the few high-purity raws of impurity such as U, Th.More particularly, use the following high-purity raw of each comfortable 5ppb of content of U, Th.Then, the frit after being in harmonious proportion is dropped into fusion tank and carries out fusion.Though fusion tank also can use platinum container (comprising platinum rhodium container) owing in glass, sneak into the platinum pit easily, therefore preferably at least the inwall of fusion tank (end face, side, bottom surface) make by the few refractory body of U, Th.Specifically, aluminium oxide refractory body (for example aluminum oxide electroforming brick) or quartzy refractory body (for example quartz brick) be owing to be difficult to be etched, and the content of U, Th can be made as respectively below the 1ppm, and the stripping in glass of U, Th is few, and is therefore preferred.Then, in defecator, carry out homogenize (deaeration, texture are removed) of melten glass.This defecator is as long as made by refractory body or platinum.And, in general the zirconia refractory body is very good aspect erosion resisting, but on the other hand, owing to contain a lot of radioisotopes, therefore should avoid using, if but reduce impurity level in the zirconia refractory body, be made as the content of U, Th below the 1ppm respectively, then can use it for the inwall of fusion tank, make the few cover glass for semiconductor package of alpha ray exit dose.
Thereafter, the melten glass that will have been homogenized is made tabular with drop-down (down-draw) method, obtains having the glass sheet of required thickness.As glass tube down-drawing, can use drop-down (overflowdown-draw) method or slot draw (slot down-draw) method of overflowing.The glass sheet cut-out that so obtains is processed as given size, makes cover glass by carrying out chamfer machining as required.
Below, will describe with cover glass packaging body of the present invention based on embodiment.
Fig. 1 represents the cover glass for semiconductor package 10 among the embodiment.This cover glass for semiconductor package 10 is to have possessed the 1st transparent surface 10a and the 2nd transparent surface 10b that faces mutually along the thickness of slab direction, the plate glass that constitutes the side 10c of periphery.This cover glass 10 is of a size of 14 * 16 * 0.5mm, and the 1st transparent surface 10a and the 2nd transparent surface 10b are non-abradant surface, and its surface roughness (Ra) is all below 0.5nm.In addition, though diagram is omitted, side 10c has chamfer shape.
Below, the result of the evaluation experimental of the manufacture method of described cover glass for semiconductor package and performance thereof is described.
The initial manufacturing process of plate glass is for making the operation of the big sheet glass more than 500nm on one side.As mentioned above, when forming the good plate glass of surface quality grade, most preferably overflow glass tube down-drawing.What is called is overflowed glass tube down-drawing as shown in Figure 2, is to flow into melten glass 12 in the groove of being made by refractory body 11, and the melten glass 12 that overflows from the both sides of groove 11 is merged in the bottom of groove 11, forms tabular and method that move downwards.According to this method,, therefore just can obtain the good big sheet glass 13 of flatness because the Free Surface of melten glass forms the table back side of plate glass.In addition, by control melting condition and molding condition, just can easily form wall thickness is that 0.05～0.7mm, surface roughness (Ra) are the following big sheet glass 13 of 1.0nm.Thus, just can not grind the surface of big sheet glass 13, only be processed as given size, make cover glass for semiconductor package by cut-out.
As the method for will this big sheet glass 13 cutting off, can utilize mechanical scriber or laser scriber.So-called laser scriber, at first use the hot working laser cutting device, on a side's of big sheet glass face, about 20% thickness until the thickness of slab direction, in the laser beam translational speed is under the condition of 180 ± 5mm/sec or 220 ± 5mm/sec, laser output 120 ± 5W or 160 ± 5W, implements the cancellate processing of chessboard.Then, as conceptually representing among Fig. 3, machined surface 13a with respect to big sheet glass 13, from its opposite side metal wire type end 14 is moved along direction of action M, simultaneously by with the machined surface 13a side of big sheet glass 13 with anchor clamps (diagram slightly) pushing, push cutting to the machined surface 13a stress application of big sheet glass 13.By cutting like this, just can obtain to be made into the cancellate rectangular plate glass of having been cut apart along preset lines of chessboard.The rectangular plate glass that has so been carried out the pushing cutting processing is utilized vacuum tweezer (diagram slightly) respectively to the subsequent processing conveyance.After this, by rectangular plate glass is pushed cutting processing once more, just can obtain to have the cover glass of given size in length and breadth.
Table 1 is that expression is by SiO
2-Al
2O
3-B
2O
3The packaging body of the present invention that-RO class glass the is made table of the embodiment (sample No.1～5) of cover glass.
Table 1
(quality %)
| Sample No. forms | 1 | 2 | 3 | 4 | 5 | |
| SiO 2 | 59.0 | 63.0 | 58.0 | 59.0 | 59.0 | |
| Al 2O 3 | 15.0 | 16.0 | 16.0 | 15.0 | 17.0 | |
| B 2O 3 | 10.0 | 10.0 | 8.0 | 10.0 | 8.0 | |
| MgO | - | - | 1.0 | 1.0 | 3.0 | |
| CaO | 6.0 | 8.0 | 4.0 | 5.0 | 4.0 | |
| SrO | 5.0 | 1.0 | 2.0 | 3.0 | 8.0 | |
| BaO | 3.0 | 1.0 | 10.0 | 6.0 | - | |
| ZnO | 1.0 | - | - | - | - | |
| Na 2O | - | - | - | - | - | |
| K 2O | - | - | - | - | - | |
| Li 2O | - | - | - | - | - | |
| Sb 2O 3 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | |
| Alkali stripping quantity (mg) | ＜0.01 | ＜0.01 | ＜0.01 | ＜0.01 | ＜0.01 | |
| Density (g/cm 3) | 2.49 | 2.38 | 2.55 | 2.49 | 2.51 | |
| Young's modulus (GPa) | 70 | 70 | 70 | 68 | 77 | |
| Specific Young's modulus (Gpa/gcm -3) | 28 | 29 | 27 | 27 | 31 | |
| Vickers hardness | 600 | 580 | 590 | 570 | 610 | |
| Thermal coefficient of expansion [30-380 ℃] (* 10 -7/℃) | 38 | 33 | 37 | 37 | 37 | |
| Liquidus temperature (℃) | 1065 | 1105 | 1030 | 1055 | 1130 | |
| Liquid phase viscosity (dPas) | 6.0 | 6.0 | 6.7 | 6.1 | 5.2 | |
| Alpha ray exit dose (c/cm 2·hr) | 0.0076 | 0.0035 | 0.0156 | 0.0108 | 0.0075 | |
The glass specimen of table 1 is made as described below.At first, will add platinum rhodium crucible according to the frit that the mode of the composition that reaches table 1 is modulated, in having the electrofuse stove of agitating function, fusion under 1600 ℃, 20 hours condition.Then, glass specimen is made in slowly cooling by melten glass is flowed out on carbon plate, has studied all characteristics.
Can be clear that from table 1 the alkali stripping quantity of any one glass is all considerably less, in addition, for density, Young's modulus, specific Young's modulus, Vickers hardness, thermal coefficient of expansion, all be the value that satisfies the desired condition of cover glass for semiconductor package.In addition, because liquidus temperature is below 1130 ℃, liquid phase viscosity is 10
5.2More than the dPas, so devitrification resistance is good.
In addition, table 2, the 3rd, expression is by SiO
2-Al
2O
3-B
2O
3-R
2The packaging body of the present invention that O class glass the is made table of the embodiment (sample No.6～17) of cover glass.
Table 2
(quality %)
| Sample No. forms | 6 | 7 | 8 | 9 | 10 | 11 | ||
| SiO 2 | 68.8 | 65.8 | 68.4 | 68.3 | 68.8 | 67.8 | ||
| Al 2O 3 | 7.0 | 8.0 | 5.2 | 7.5 | 7.0 | 8.0 | ||
| B 2O 3 | 13.1 | 13.1 | 10.9 | 13.1 | 13.1 | 13.1 | ||
| MgO | - | 0.4 | - | - | - | - | ||
| CaO | 2.2 | 0.6 | 3.2 | - | 0.6 | 0.6 | ||
| SrO | - | - | - | - | - | - | ||
| BaO | - | - | - | - | - | - | ||
| ZnO | - | 1.2 | 0.9 | - | - | - | ||
| Na 2O | 6.7 | 8.6 | 5.6 | 8.9 | 6.7 | 8.6 | ||
| K 2O | 1.9 | 2.0 | 5.7 | 1.9 | 3.5 | 1.6 | ||
| Li 2O | - | - | - | - | - | - | ||
| TiO 2 | - | - | - | - | - | - | ||
| Sb 2O 3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | ||
| Cl | - | - | - | - | - | - | ||
| SnO 2 | - | - | - | - | - | - | ||
| SO 3 | - | - | - | - | - | - | ||
| Fe 2O 3 | 30ppm | 30ppm | 30ppm | 30ppm | 30ppm | 30ppm | ||
| U(ppb) | 4 | Undetermined | Undetermined | Undetermined | Undetermined | 4 | ||
| Th(ppb) | 2 | Undetermined | Undetermined | Undetermined | Undetermined | 2 | ||
| Thermal coefficient of expansion (* 10 -7/℃) | 55.8 | 62.8 | 64.9 | 62.0 | 59.0 | 60.4 | ||
| Density (g/cm 3) | 2.35 | 2.37 | 2.42 | 2.36 | 2.35 | 2.35 | ||
| The viscosity deformation point (℃) | 535 | 517 | 536 | 518 | 514 | 520 | ||
| Gradually cold spot (℃) | 571 | 554 | 576 | 561 | 558 | 561 | ||
| Softening point (℃) | 765 | 743 | 760 | 755 | 760 | 754 | ||
| 10 4(℃) | 1119 | 1091 | 1093 | 1077 | 1102 | 1087 | ||
| 10 3(℃) | 1345 | 1301 | 1292 | 1282 | 1316 | 1300 | ||
| 10 2.5(℃) | 1500 | 1456 | 1434 | 1434 | 1471 | 1455 | ||
| Liquidus temperature (℃) | 884 | 728 | 882 | 817 | 822 | Devitrification not | ||
| Liquid phase viscosity (dPas) | 5.9 | 7.9 | 5.8 | 6.6 | 6.6 | Devitrification not | ||
| Alpha ray exit dose (c/cm 2·hr) | 0.0020 | 0.0022 | 0.0021 | 0.0021 | 0.0020 | 0.0021 | ||
Table 3
(quality %)
| Sample No. forms | 12 | 13 | 14 | 15 | 16 | 17 | ||
| SiO 2 | 66.5 | 68.8 | 66.8 | 65.8 | 66.9 | 68.3 | ||
| Al 2O 3 | 8.0 | 7.0 | 7.0 | 8.0 | 7.5 | 7.0 | ||
| B 2O 3 | 13.1 | 12.0 | 13.1 | 13.1 | 13.1 | 13.1 | ||
| MgO | - | - | - | - | - | - | ||
| CaO | 0.6 | 2.2 | 2.2 | 0.6 | 2.2 | 0.6 | ||
| SrO | - | - | - | - | - | 0.8 | ||
| BaO | - | - | - | - | - | 0.8 | ||
| ZnO | 1.6 | - | - | - | - | - | ||
| Na 2O | 7.9 | 6.7 | 8.6 | 8.6 | 6.2 | 6.7 | ||
| K 2O | 2.0 | 3.0 | 2.0 | 2.0 | 3.0 | 2.4 | ||
| Li 2O | - | - | - | - | 0.5 | - | ||
| TiO 2 | 1.6 | |||||||
| Sb 2O 3 | 0.3 | 0.3 | 0.3 | 0.3 | - | - | ||
| Cl | - | - | - | - | 0.2 | - | ||
| SnO 2 | - | - | - | - | 0.3 | 0.3 | ||
| SO 3 | - | - | - | - | - | 100ppm | ||
| Fe 2O 3 | 30ppm | 30ppm | 30ppm | 10ppm | 30ppm | 30ppm | ||
| U(ppb) | Undetermined | Undetermined | 4 | 4 | Undetermined | Undetermined | ||
| Th(ppb) | Undetermined | Undetermined | 2 | 2 | Undetermined | Undetermined | ||
| Thermal coefficient of expansion (* 10 -7/℃) | 59.9 | 59.1 | 62.8 | 61.4 | 60.6 | 55.8 | ||
| Density (g/cm 3) | 2.36 | 2.37 | 2.39 | 2.36 | 2.36 | 2.33 | ||
| The viscosity deformation point (℃) | 509 | 531 | 530 | 510 | 527 | 521 | ||
| Gradually cold spot (℃) | 552 | 574 | 568 | 552 | 568 | 561 | ||
| Softening point (℃) | 752 | 764 | 745 | 744 | 759 | 761 | ||
| 10 4(℃) | 1106 | 1117 | 1059 | 1086 | 1095 | 1109 | ||
| 10 3(℃) | 1331 | 1341 | 1261 | 1306 | 1306 | 1333 | ||
| 10 2.5(℃) | 1483 | 1494 | 1401 | 1461 | 1454 | 1486 | ||
| Liquidus temperature (℃) | Devitrification not | 867 | 855 | 822 | 842 | 853 | ||
| Liquid phase viscosity (dPas) | Devitrification not | 6.1 | 5.9 | 6.4 | 6.3 | 6.2 | ||
| Alpha ray exit dose (c/cm 2·hr) | 0.0021 | 0.0021 | 0.0021 | 0.0021 | 0.0023 | 0.0030 | ||
Each sample in the table 2,3 is made as followsly.
At first, the high purity glass raw material that to modulate according to the mode of the composition that becomes table drops in the crucible by platinum rhodium, aluminium oxide, quartzy any one making, in having the electrofuse stove of agitating function, fusion under 1550 ℃, 6 hours condition, this melten glass is flowed out on carbon plate, then the slow cooling of this glass sheet has been formed glass specimen.
From table, can be clear that each glass specimen all is the value that satisfies the desired condition of cover glass for semiconductor package for thermal coefficient of expansion, density, alpha ray exit dose, and, owing to be equivalent to 10
2.5The temperature of the viscosity of dPas is below 1500 ℃, so meltbility is good, because liquidus temperature is below 884 ℃, liquid phase viscosity is 10
5.8More than the dPas, so devitrification resistance is good.
And the alkali stripping quantity in the table is based on that JIS R3502 measures.Density is to utilize known Archimedes' principle to measure.Specific Young's modulus is to destroy spring rate determinator (KI-11) by using clock to spin (strain) manufacture-illegal, utilizes Young's modulus that the flexural resonance method measures and density to calculate.Vickers hardness is based on JIS Z2244-1992 mensuration.Thermal coefficient of expansion is to use dilatometer, has measured the mean thermal expansion coefficients in 30～380 ℃ the temperature range.Liquidus temperature is the particle diameter that each glass specimen is broken for 300～500 μ m, it is added platinum alloy crucible, in temperature gradient furnace, keep utilizing microscopic examination after 8 hours, be determined at glass specimen inside and can see the maximum temperature of devitrification (crystal foreign matter), this temperature is made as liquidus temperature.In addition, the viscosity with the glass under the liquidus temperature is made as liquid phase viscosity.No.1,12 glass specimen are not seen devitrification, and devitrification resistance is good especially.The content of U, Th utilizes ICP-MASS to measure.In addition, deformation point and gradually cold spot be to measure according to the method for ASTMC336-71, softening point is to measure according to the method for ASTM C338-93.10
4DPas temperature, 10
3DPas temperature and 10
2.5The dPas temperature is to utilize known platinum ball czochralski method to try to achieve.10
2.5The dPas temperature is to have measured to be equivalent to as 10 of high temperature viscosity
2.5The value of the temperature of pool, this value is low more, and then meltbility is just good more.The alpha ray exit dose is to use ultra low levels alpha ray determinator (sumitomo chemical company system LACS-4000M) to measure.
In addition, with the No.1,6,11 of table 1～3, glass specimen fusion in experiment fusion tank (aluminium oxide refractory body system) of 14 and 15, make the tabular of thickness 0.5mm with overflowing glass tube down-drawing, by not grinding its surface, utilize laser scriber to implement to cut off processing, having made longitudinal size is that 14mm, lateral dimension are the cover glass of 16mm.
In addition, in order to compare, according to the mode of the glass that becomes sample No.1 with frit in described experiment fusion tank after the fusion, castable is the size of 800 * 300 * 300mm, by using fret saw to cut, being processed as thickness of slab is the tabular of 1.5mm.Thereafter, by using grindstone to implement precise finiss processing on the two sides of this plate glass, form big sheet glass (wall thickness is 0.5mm), implement to utilize the cut-out processing of laser scriber, having made longitudinal size is that 14mm, lateral dimension are the cover glass of 16mm.
To the surface roughness (Ra) of the transparent surface (the 1st transparent surface and the 2nd transparent surface) of the table back of the body of each cover glass of making like this, use contact pin type surface roughness measurement machine リ ス テ Star プ (Tayler-Hobson corporate system) to measure.Its result is illustrated in the table 4.
Table 4
| Sample No. | 1 | 6 | 11 | 14 | 15 | Comparative example |
| Surface roughness (Ra) the 1st transparent surface the 2nd transparent surface | 0.15nm 0.20nm | 0.20nm 0.15nm | 0.23nm 0.19nm | 0.20nm 0.18nm | 0.18nm 0.16nm | 0.56nm 0.98nm |
From table 4, can be clear that, the surface roughness (Ra) of the 1st transparent surface of the cover glass of embodiment and the 2nd transparent surface is all below 0.23nm, has very good even surface, although but the cover glass of comparative example has been implemented precise finiss processing, surface roughness (Ra) is still more than 0.56nm.In addition, after the transparent surface to each cover glass has carried out with atomic force microscope (AFM) observing, find on the cover glass of comparative example, spread all over and formed countless microlesions all sidedly, and on the cover glass of embodiment, but do not see this kind damage.
The industrial possibility of utilizing
Packaging body of the present invention is suitable for as solid photographic device packaging body cover glass with cover glass, and in addition, the cover glass that can be used as to take in the various semiconductor package body headed by the packaging body of laser diode uses. In addition, this cover glass is because the mean thermal expansion coefficients in 30～380 ℃ the temperature range is 30～85 * 10-7/ ℃, therefore except the alumina packaging body, in the various packaging bodies of being made by resin, tungsten metal, cobalt alloy, molybdenum, 36Ni-Fe alloy, 42Ni-Fe alloy, 45Ni-Fe alloy, 46Ni-Fe alloy, 52Ni-Fe alloy etc., it is bonding also can to use organic resin or low-melting glass to seal.
Claims (21)
1. a cover glass for semiconductor package is characterized in that, transparent surface is non-abradant surface, and its surface roughness Ra is below 1.0nm, and % represents with quality, and described cover glass for semiconductor package contains SiO
2: 52～70%, Al
2O
3: 5～20%, B
2O
3: 5～20%, alkaline-earth metals oxide: 4～30%, the basic composition of ZnO:0～5%, and do not contain alkali metal oxide in fact.
2. cover glass for semiconductor package according to claim 1 is characterized in that, is shaped by glass tube down-drawing or unsteady method.
3. cover glass for semiconductor package according to claim 2 is characterized in that glass tube down-drawing is for overflowing glass tube down-drawing.
4. according to any described cover glass for semiconductor package in the claim 1～3, it is characterized in that the glass viscosity under the liquidus temperature is 10
5.2More than the dPas.
5. cover glass for semiconductor package according to claim 1 is characterized in that, the mean thermal expansion coefficients in 30～380 ℃ the temperature range is 30～85 * 10
-7/ ℃.
6. cover glass for semiconductor package according to claim 1 is characterized in that the alpha ray exit dose is at 0.01c/cm
2Below the hr.
7. cover glass for semiconductor package according to claim 1 is characterized in that the alkali stripping quantity is below 1.0mg.
8. cover glass for semiconductor package according to claim 1 is characterized in that, wall thickness is 0.05～0.7mm.
9. cover glass for semiconductor package according to claim 1 is characterized in that density is at 2.55g/cm
3Below.
10. according to any described cover glass for semiconductor package in claim 1～3 or 5～9, it is characterized in that, be used to take in the packaging body of solid photographic device.
11. according to any described cover glass for semiconductor package in claim 1～3 or 5～9, it is characterized in that, be used to take in the packaging body of laser diode.
12. a cover glass for semiconductor package is characterized in that, is formed by glass tube down-drawing or unsteady method, the surface roughness Ra of transparent surface is below 1.0nm, and % represents with quality, contains SiO
2: 52～70%, Al
2O
3: 5～20%, B
2O
3: 5～20%, alkaline-earth metals oxide: 4～30%, the basic composition of ZnO:0～5%, do not contain alkali metal oxide in fact, the mean thermal expansion coefficients in 30～380 ℃ the temperature range is 30～85 * 10
-7/ ℃, the glass viscosity under the liquidus temperature is 10
5.2More than the dPas.
13. cover glass for semiconductor package according to claim 12 is characterized in that, from the alpha ray exit dose of glass at 0.01c/cm
2Below the hr.
14. cover glass for semiconductor package according to claim 12 is characterized in that, the U content in the glass is below 10ppb, and Th content is below 20ppb.
15. according to any described cover glass for semiconductor package in the claim 12～14, it is characterized in that, do not contain As in fact
2O
3
16. the manufacture method of a cover glass for semiconductor package is characterized in that, drops into frit in the fusion tank that inwall is formed by refractory body at least, after the fusion, it is tabular to utilize glass tube down-drawing or unsteady method to be configured as, and described frit is represented according to becoming with quality %, contains SiO
2: 52～70%, Al
2O
3: 5～20%, B
2O
3: 5～20%, alkaline-earth metals oxide: 4～30%, the basic composition of ZnO:0～5%, do not contain alkali metal oxide in fact, the mean thermal expansion coefficients in 30～380 ℃ the temperature range is 30～85 * 10
-7/ ℃, the glass viscosity under the liquidus temperature is 10
5.2The mode of the glass that dPas is above is modulated and is formed.
17. the manufacture method of cover glass for semiconductor package according to claim 16 is characterized in that, glass tube down-drawing is for overflowing glass tube down-drawing.
18. the manufacture method of cover glass for semiconductor package according to claim 16 is characterized in that, refractory body for from aluminium oxide refractory body, quartzy refractory body, zirconia refractory body one group, select more than a kind or 2 kinds.
19. the manufacture method of cover glass for semiconductor package according to claim 16 is characterized in that, in the refractory body content of contained U and Th each below the comfortable 1ppm.
20. the manufacture method of cover glass for semiconductor package according to claim 16 is characterized in that, in the frit content of contained U and Th each below the comfortable 5ppb.
21. the manufacture method according to any described cover glass for semiconductor package in the claim 16～20 is characterized in that, the frit quilt is according to becoming the alpha ray exit dose at 0.01c/cm
2The mode of the glass that hr is following is modulated and is formed.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003041411 | 2003-02-19 | ||
| JP41411/2003 | 2003-02-19 | ||
| JP339209/2003 | 2003-09-30 | ||
| JP35383/2004 | 2004-02-12 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710006305 Division CN100546041C (en) | 2003-02-19 | 2004-02-16 | Cover glass for semiconductor package and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1748303A CN1748303A (en) | 2006-03-15 |
| CN100390968C true CN100390968C (en) | 2008-05-28 |
Family
ID=36167009
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800040982A Expired - Fee Related CN100390968C (en) | 2003-02-19 | 2004-02-16 | Cover glass for semiconductor package and method for producing same |
| CN 200710006305 Expired - Fee Related CN100546041C (en) | 2003-02-19 | 2004-02-16 | Cover glass for semiconductor package and manufacture method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710006305 Expired - Fee Related CN100546041C (en) | 2003-02-19 | 2004-02-16 | Cover glass for semiconductor package and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN100390968C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227116A (en) * | 2013-03-29 | 2013-07-31 | 日月光半导体制造股份有限公司 | Light-transmitting casing, manufacturing method thereof and optical module employing light-transmitting casing |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102448901B (en) * | 2009-03-19 | 2015-11-25 | 日本电气硝子株式会社 | Non-alkali glass |
| CN110767668B (en) * | 2019-12-30 | 2020-03-27 | 杭州美迪凯光电科技股份有限公司 | CLCC packaging body cover plate with nanoscale surface, packaging body and camera module |
| CN112010561B (en) * | 2020-09-17 | 2022-04-15 | 成都光明光电股份有限公司 | Packaging glass |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11209145A (en) * | 1998-01-20 | 1999-08-03 | Nippon Electric Glass Co Ltd | Window glass for optical semiconductor |
| JP2000143286A (en) * | 1998-09-04 | 2000-05-23 | Nippon Electric Glass Co Ltd | Tube glass less liable to leach lead |
| WO2001056941A1 (en) * | 2000-02-04 | 2001-08-09 | Schott Glas | Alkali-containing aluminum borosilicate glass and utilization thereof |
| CN1347151A (en) * | 2000-10-10 | 2002-05-01 | 华泰电子股份有限公司 | Package structure of CCD pick-up chip |
-
2004
- 2004-02-16 CN CNB2004800040982A patent/CN100390968C/en not_active Expired - Fee Related
- 2004-02-16 CN CN 200710006305 patent/CN100546041C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11209145A (en) * | 1998-01-20 | 1999-08-03 | Nippon Electric Glass Co Ltd | Window glass for optical semiconductor |
| JP2000143286A (en) * | 1998-09-04 | 2000-05-23 | Nippon Electric Glass Co Ltd | Tube glass less liable to leach lead |
| WO2001056941A1 (en) * | 2000-02-04 | 2001-08-09 | Schott Glas | Alkali-containing aluminum borosilicate glass and utilization thereof |
| CN1347151A (en) * | 2000-10-10 | 2002-05-01 | 华泰电子股份有限公司 | Package structure of CCD pick-up chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227116A (en) * | 2013-03-29 | 2013-07-31 | 日月光半导体制造股份有限公司 | Light-transmitting casing, manufacturing method thereof and optical module employing light-transmitting casing |
| CN103227116B (en) * | 2013-03-29 | 2016-01-20 | 日月光半导体制造股份有限公司 | Its optical module of light-permeable shell and manufacture method thereof and application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1748303A (en) | 2006-03-15 |
| CN100546041C (en) | 2009-09-30 |
| CN101071817A (en) | 2007-11-14 |
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