CN100388436C - Metal fuse structure of semiconductor assembly part and its manufacturing method - Google Patents
Metal fuse structure of semiconductor assembly part and its manufacturing method Download PDFInfo
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- CN100388436C CN100388436C CNB021197210A CN02119721A CN100388436C CN 100388436 C CN100388436 C CN 100388436C CN B021197210 A CNB021197210 A CN B021197210A CN 02119721 A CN02119721 A CN 02119721A CN 100388436 C CN100388436 C CN 100388436C
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Abstract
The present invention relates to a metal fuse structure of a semiconductor component and a manufacturing method thereof. A weak connection part which is easy to fuse is formed, and manufacturing processes of extra exposure, etching, deposition, etc. do not need to be added. At least one ditch can be etched in a dielectric layer, and a metallic layer can be plated in the dielectric layer during the period that a fuse is etched according to the present invention in order to generate one or a plurality of metallic fuses with low step covered weak connection parts at the side wall of the ditch. A fuse neck with narrow width can also be designed in a fuse in the layout of a semiconductor integrated circuit according to the present invention to form a fuse with a weak connection part. Compared with a conventional metallic fuse with uniform width, the metallic fuses with the low step covered weak connection parts formed according to the present invention are easy to fuse by laser beam to obtain a good fusing rate.
Description
Technical field
The invention relates to one and metal fuse structure of semiconductor assembly part, particularly relevant for the manufacture method that links the metal fuse structure of (Weak Link) a little less than a kind of tool.
Background technology
Integrated circuit package has generally included fusible lead or fuse, to be used for internal memory or logical circuit distribution again.For example, but at the program read-only memory of can erasing (ElectricallyErasable and Programmable Read Only Memories, EEPROM), DRAM (Dynamic Random Access Memory) (Dynamic Random Access Memories, DRAM) and static random access memory (Static Random Access Memories, SRAM) in the suchlike semiconductor memory, in case when finding the memory cell of defective, the fuse that can use repairing or redundant technique (RedundancyTechnology) to link to each other with these defective memory cells by laser blown, optionally substitute again, with the yield that increases semiconductor memory cell and reduce production costs with standby memory cell.Similarly, logical circuit also can carry out circuit mending or distribution again by cutting off fuse.For example, generally is to make a large amount of online logic locks at first in logic chip, in the end cut off the fuse of online of unwanted circuit to form the chip that tool is intended to logic function according to customer demand again during process stage.
Typically, the material that is used to make the metal fuse of semiconductor subassembly is to comprise aluminium, copper or tungsten.Because metal fuse normally forms simultaneously with the plain conductor of top layer, and semiconductor subassembly needs enough mechanical strengths when detecting and engage, so the thickness of top layer metallic layer is very thick usually, for example is about 12000 dusts.When fuse was formed at the thick top layer metallic layer of this kind, laser energy that blow out fuse is required and time were relatively to increase.If the time of fusing is not enough, then the energy shortage that absorbs of fuse is easy causes unfavorable fusing yield, if prolong the time of fusing, then can reduce processing procedure efficient, increases cost of energy and damage other assembly around the fuse easily, does not meet economic benefit.Therefore, need a kind of new fuse-wires structure badly to address the above problem.
Summary of the invention
Because in the foregoing invention background, some problems that the metal fuse of commonly using semiconductor subassembly is met with when being formed at top layer metallic layer, for example metal layer thickness too thick, expend laser energy and be difficult for reaching shortcoming such as desirable fusing yield, add the character of consideration metal fuse and the demand of successive process, the present invention proposes a kind of new metal fuse structure and forming method thereof, to address the above problem.
Purpose of the present invention is for providing the manufacture method of the metal fuse that links a little less than a kind of tool.
Another object of the present invention can reduce the required laser energy of metal fuse fusing and improve the fusing yield, and need not add extra fabrication steps for the metal fuse that links a little less than a kind of tool is provided.
According to above-described purpose, the manufacture method of the weak metal fuse that links of tool is may further comprise the steps among the present invention: form one first dielectric layer on the semiconductor base material, be to be embedded with conductor layer in first dielectric layer wherein, then form one second dielectric layer on first dielectric layer, form at least one hole then in second dielectric layer, the metal level that forms the low ladder covering of a tool (Step Coverage) at last is on second dielectric layer.Wherein, the metal level that is formed on the sidewall of second dielectric layer is that the low ladder of tool covers, thereby is formed with the weak binding that is beneficial to laser blown.
According to above-described purpose, metal fuse structure of the present invention is to include the semiconductor base material at least; One first dielectric layer shape has been embedded with conductor layer in first dielectric layer on semiconductor substrate, the upper surface of first dielectric layer and conductor layer is through planarization so that the upper surface copline of first dielectric layer and conductor layer; One second dielectric layer shape is to form at least one irrigation canals and ditches in second dielectric layer on first dielectric layer; One barrier layer is on second dielectric layer and at least one irrigation canals and ditches; One metal level is on barrier layer; And one protective layer on metal level, wherein be formed at metal level on the trench sidewall and be that the low ladder of tool covers and the weak linking portion that forms fuse helps laser blown.
According to the manufacture method of the metal fuse that links a little less than the tool of the present invention not needs increase processing procedures such as any extra exposure, etching and deposition.According to first to three embodiment of the present invention, by during the fuse etching, in dielectric layer, forming at least one irrigation canals and ditches, and form a metal level on irrigation canals and ditches, just can form the weak metal fuse that links of tool.Because the step coverage of irrigation canals and ditches is not good, therefore the metal level that is formed on the trench sidewall has the weak linking portion that becomes fuse than minimal thickness.The weak quantity that links is to look actual demand to can be one or more, and the length of weak binding and the degree of depth can be decided according to the slope of irrigation canals and ditches and width.A fourth embodiment in accordance with the invention can be when integrated circuit layout forms the neck of a narrow width in fuse-wires structure, this neck is the weak linking portion that becomes in the whole fuse-wires structure.
Compared to known metal fuse structure, the formed metal fuse structure of the method according to this invention is at least one weak linking portion of tool, more easily by laser blown, can increase the fusing yield and reduce the processing procedure cost.
Description of drawings
Fig. 1 is the generalized section of known metal fuse structure;
Fig. 2 A one Fig. 2 C is the processing procedure generalized section of the metal fuse structure of a preferred embodiment of the present invention;
Fig. 2 D is the partial enlarged drawing of the weak linking portion of the metal fuse among Fig. 2 C;
Fig. 3 is the generalized section of the metal fuse structure of another preferred embodiment of the present invention;
Fig. 4 A is the generalized section of the metal fuse structure of the another preferred embodiment of the present invention;
Fig. 4 B is the partial enlarged drawing of the weak linking portion of the metal fuse among Fig. 4 A;
Fig. 5 comprises the local integrated circuit layout of the metal fuse structure of a preferred embodiment again according to the present invention.
The figure number explanation:
10,110,210,310 base materials
20,120,220,320 first dielectric layers
22,122,222,322 conductor layers
30,130,230,330 second dielectric layers
32,132 interlayer holes
36,136 connectors
40,140,240,340 barrier layers
50,150,250,350 metal fuse layers
131 photoresist layers
134,234,334 irrigation canals and ditches
152,252,352 weak bindings
410 fuses
412 necks
414A, 414B fuse end
420A, 420B Metal Contact window connector
430A, 430B lead
440 fuse windows
450 guard rings
Embodiment
The some problems that by laser blown the time, met with in view of above-mentioned known fuse-wires structure, the present invention provides a kind of metal fuse structure of semiconductor assembly part, to use laser semiconductor subassembly to be repaired or during redundant technique, can reach blow out fuse effectively easily, metal fuse structure wherein of the present invention is characterised in that to have the weak linking portion that low ladder covers.
Fig. 1 is the generalized section of known metal fuse structure.As shown in Figure 1, be to form first dielectric layer 20 on the semiconductor substrate 10, be to be embedded with multiplex conductor layer 22 in first dielectric layer 20 wherein, for example can comprise plural layer inner metal dielectric layer (Inter-Metal Dielectric), be formed at the metal interconnect on each inner metal dielectric layer, and be formed at metal plug in the inner metal dielectric layer in order to couple the metal interconnect of each inner metal dielectric layer upper and lower.The conductor layer 22 of finishing first dielectric layer 20 bury underground after, usually use chemical mechanical milling method (ChemicalMechanical Polishing, CMP) upper surface to first dielectric layer 20 and conductor layer 22 carries out planarization, so that the upper surface copline of first dielectric layer 20 and conductor layer 22.Then form second dielectric layer 30 on first dielectric layer 20, utilize little shadow (Photolithography) and dry ecthing procedure in second dielectric layer 30, to form interlayer hole (ViaHole) 32 again.Then, form barrier layer 40 diffusion and electromigration (Electromigration) with the metal level that prevents follow-up formation on second dielectric layer 30, form metal level 50 again on barrier layer 40, at last metal level 50 is carried out little shadow and dry ecthing procedure to define the profile of fuse.Traditionally, fuse metal level common and top layer forms simultaneously, because semiconductor subassembly needs enough mechanical strengths when detecting and engage, so the thickness of top layer metallic layer is very thick usually, for example is about 12000 dusts.When fuse was formed at so thick top layer metallic layer, need expend higher laser energy or long fusing time could be with fuse failure, and is difficult for reaching desirable fusing yield.Therefore, the present invention proposes a kind of fuse-wires structure and manufacture method thereof that improves the fusing yield.
Fig. 2 A-Fig. 2 C is the processing procedure generalized section that illustrates the metal fuse structure of first preferred embodiment according to the present invention.Shown in Fig. 2 A, be to form first dielectric layer 120 on the semiconductor substrate 110, be to be embedded with conductor layer 122 in first dielectric layer 120 wherein, conductor layer 122 for example can comprise the plural layer inner metal dielectric layer, be formed at the metal interconnect on each inner metal dielectric layer, and is formed at connector in the inner metal dielectric layer in order to couple the upper and lower metal interconnect of each inner metal dielectric layer.Preferably, the method that forms first dielectric layer 120 can be used chemical vapour deposition technique.The material of first dielectric layer 120 can comprise silica or other dielectric material that is fit to, and the material of conductor layer 122 can comprise copper or aluminium.In the present embodiment, the material of first dielectric layer 120 is a silica and the material of conductor layer is a copper.After the making of finishing first dielectric layer 120 and conductor layer 122, can adopt chemical mechanical milling method that the upper surface of first dielectric layer 120 and conductor layer 122 is carried out planarization so that the upper surface copline of its grade.
Then, deposit second dielectric layer 130 on first dielectric layer 120, form then a photoresist layer 131 on second dielectric layer 130 to define interlayer hole 132 and fuse irrigation canals and ditches 134, again via dry ecthing procedure to shift the photoresistance pattern on second dielectric layer 130, remove photoresist layer 131 at last.Preferably, the material of second dielectric layer 130 can comprise silica (SiOx) or other dielectric material that is fit to, and dry ecthing procedure can use and include CF4, C4F8, CHF3, N2; The mist of Ar, CO carries out.In the present embodiment, the interlayer hole 132 that is formed at second dielectric layer 130 is to aim at respectively and expose conductor layer 122 in first dielectric layer, and fuse irrigation canals and ditches 134 are to be formed between this two interlayer hole 132.
Consult Fig. 2 B, after removing photoresist layer 131, then form upper surface and the sidewall surfaces of a barrier layer 140, with the diffusion and the electromigration of the metal level that prevents follow-up formation in second dielectric layer 130, interlayer hole 132 and fuse irrigation canals and ditches 134.The material of barrier layer can comprise titanium nitride, tantalum nitride, tantalum or tungsten titanium etc.Then, form a metal level 150 on barrier layer 140, shown in Fig. 2 C.Preferably, the generation type of metal level 150 can be used sputter (Sputtering) mode, the material of jet-plating metallization layer 150 can comprise aluminium or copper, and interlayer hole 132 is that the metal filled by sputter forms metal plug 136, and with first dielectric layer 120 in conductor layer 122 electric coupling.Because sputter is not good to the step coverage of irrigation canals and ditches structure, most jet-plating metallization is to be deposited on chip surface, and at the less metal thickness of irrigation canals and ditches both sides deposition.Therefore, in the present embodiment, the metal level that is formed at trench sidewall 152 is to have lower ladder to cover (shown in Fig. 2 D), becomes the weak linking portion in the whole fuse-wires structure, thereby helps laser blown.The visual demand of the quantity of the weak binding of metal fuse structure and be one or more, and the length of weak binding and thickness can be decided according to slope, width and the actual demand of fuse irrigation canals and ditches.
Fig. 3 is the generalized section that illustrates the metal fuse structure of second preferred embodiment of the present invention.The generation type of the metal fuse structure of present embodiment is roughly similar to Fig. 2 A-Fig. 2 C those shown, only is to use different photoresistance pattern (not shown) in the present embodiment, so that second dielectric layer 230 forms the irrigation canals and ditches of different section profiles behind dry ecthing procedure.As shown in Figure 3, be to form irrigation canals and ditches 234 in second dielectric layer 230, these irrigation canals and ditches 234 are to expose in first dielectric layer 220 two adjacent conductor layers 222, are to ignore interlayer hole in second dielectric layer of present embodiment.Similarly, form a barrier layer 240 and a metal level 250 in regular turn on second dielectric layer 230 and fuse irrigation canals and ditches 234.The structure of present embodiment is the simple in structure of more traditional fuse (as shown in Figure 1), and because of need not interlayer hole, metal fuse is directly to link to each other with the lead of lower floor.Except that this, owing to the low ladder of the metal level tool on the sidewall 252 that is formed at fuse irrigation canals and ditches 234 covers, cause the metal layer thickness that is formed at fuse trench sidewall 252 thinner, thereby become the weak linking portion of fuse-wires structure for this reason, help laser blown.
Fig. 4 A is the generalized section that illustrates the metal fuse structure of the 3rd preferred embodiment of the present invention.The generation type of the metal fuse structure of present embodiment is roughly similar to Fig. 2 A-Fig. 2 C those shown, employed photoresistance pattern is anti-phase (ReverseTone) photoresistance pattern for Fig. 2 A-Fig. 2 C in the thought present embodiment, and therefore formed fuse shape is opposite with the fuse shape of Fig. 2 C.Shown in Fig. 4 A, second dielectric layer 330 is being to form two irrigation canals and ditches 334 behind little shadow and dry ecthing procedure, and these two irrigation canals and ditches 334 are to expose in first dielectric layer 320 two adjacent conductor layers 322 respectively.Then, form a barrier layer 340 and a metal level 350 in regular turn on second dielectric layer 330 and fuse irrigation canals and ditches 334.Similarly, the sidewall 352 of fuse irrigation canals and ditches 334 has low ladder and covers, thus be formed at the metal layer thickness thin (shown in Fig. 4 B) on the trench sidewall 352, so become the weak linking portion of fuse-wires structure for this reason and help laser blown.
General in the process of carrying out laser blown, if when the width of fuse was too big, the required laser energy of blow out fuse was big and the time is longer; On the contrary, if the width of fuse is too narrow or too thin hour, because easily being arranged by dielectric layer on every side, the fuse institute heat energy that absorbent laser heat energy correspondingly reduces and fuse absorbed itself dissipates, so be difficult for reaching the required temperature of fuse failure.Therefore, the present invention proposes a kind of fuse-wires structure that helps laser blown.Fig. 5 illustrates the integrated circuit layout that includes according to the fuse-wires structure of fourth embodiment of the invention.As shown in Figure 5, finished the integrated circuit of part on the semiconductor base material, wherein metal fuse 410 is to be formed between two adjacent Metal Contact window connector 420A, the 420B, and laser beam is with fuse 410 fusing via fuse window 440 (shown in dotted line).Usually, around metal fuse 410, can form guard ring 450 and suffer moisture attack to prevent metal fuse.Metal fuse 410 is to include fuse end 414A, the 414B that a fuse neck 412 and two connects contact hole connector 420A, 420B respectively, and fuse neck 412 is to have narrower width.Two Metal Contact window connector 420A, 420B link to each other with other common semiconductor subassembly by lead 430A, 430B respectively.Fuse-wires structure compared to the consistent width of known tool, the fuse-wires structure of the narrower width neck of tool is to form a weak linking portion on whole fuse-wires structure in the present embodiment, be easier to by laser blown, thus required laser energy of blow out fuse and time can be reduced, and reach desirable fusing yield.The quantity of the neck of fuse-wires structure is that the demand of looking can be one or more, and the width of neck and length can be decided according to being intended to specification.After the making of finishing metal fuse, usually can with the electricity slurry strengthen chemical vapour deposition (CVD) (PECVD) mode deposit one to two layer of dielectric layer (for example silicon nitride layer or silicon oxide layer) on metal fuse with as protective layer (Passivation).This dielectric layer can carry out little shadow and the weld pad (Bonding Pad) of dry ecthing procedure to expose assembly together again, is used for carrying out the test of assembly and the usefulness of structure dress.
As previously discussed, the formed metal fuse structure of said method is that nature is formed with the weak linking portion that is beneficial to laser blown according to the present invention, does not need fuse to be carried out processing procedures such as extra little shadow and etching again.Consider the mechanical strength requirements of semiconductor subassembly when detecting and engage, the metal fuse structure that said method forms according to the present invention is to form simultaneously with top layer metallic layer, do not need to reduce metal layer thickness and just can be formed with the weak linking portion that is beneficial to laser blown, improve the yield of laser blown operation.
Claims (9)
1. the manufacture method of a metal fuse is characterized in that, this method comprises the following steps:
Form one first dielectric layer on the semiconductor base material, have at least two leads in this first dielectric layer;
Form one second dielectric layer on this first dielectric layer;
Carry out the single micro image etching procedure, form at least one hole in this second dielectric layer to expose this at least two lead simultaneously; And
Formation has at least one fuse conductive line of low ladder covering on this second dielectric layer and in this at least one hole, to electrically connect this at least two lead.
2. the manufacture method of metal fuse as claimed in claim 1 is characterized in that, this at least one hole comprises two interlayer holes and irrigation canals and ditches, and this two interlayer hole exposes this at least two lead respectively, and these irrigation canals and ditches are formed between this two interlayer hole.
3. the manufacture method of metal fuse as claimed in claim 1 is characterized in that, this at least one hole comprises two irrigation canals and ditches, and these two irrigation canals and ditches expose this at least two lead respectively.
4. the manufacture method of metal fuse as claimed in claim 1 is characterized in that, the method that forms this at least one fuse conductive line comprises sputtering method.
5. the manufacture method of metal fuse as claimed in claim 1 is characterized in that, the material of this at least one fuse conductive line is selected from the group that is made up of aluminium, copper and tungsten.
6. a metal fuse structure is characterized in that, this structure comprises:
One first dielectric layer is positioned on the semiconductor base material;
At least two leads are arranged in this first dielectric layer;
One second dielectric layer is positioned on this first dielectric layer and this two lead at least, has at least one hole in this second dielectric layer to expose this at least two lead, and this at least one hole is formed by the micro image etching procedure that carries out single; And
At least one fuse conductive line is arranged on this second dielectric layer and this at least one hole, and this fuse conductive line covers for low ladder on the sidewall of this at least one hole.
7. metal fuse structure as claimed in claim 6 is characterized in that, this at least one hole comprises two interlayer holes and irrigation canals and ditches, and this two interlayer hole exposes this at least two lead respectively, and these irrigation canals and ditches are between this two interlayer hole.
8. metal fuse structure as claimed in claim 6 is characterized in that, this at least one hole comprises two irrigation canals and ditches, and these two irrigation canals and ditches expose this at least two lead respectively.
9. metal fuse structure as claimed in claim 6 is characterized in that the material of this at least one fuse conductive line is selected from the group that is made up of aluminium, copper and tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021197210A CN100388436C (en) | 2002-05-15 | 2002-05-15 | Metal fuse structure of semiconductor assembly part and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021197210A CN100388436C (en) | 2002-05-15 | 2002-05-15 | Metal fuse structure of semiconductor assembly part and its manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| CN1459831A CN1459831A (en) | 2003-12-03 |
| CN100388436C true CN100388436C (en) | 2008-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB021197210A Expired - Lifetime CN100388436C (en) | 2002-05-15 | 2002-05-15 | Metal fuse structure of semiconductor assembly part and its manufacturing method |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060163734A1 (en) * | 2005-01-24 | 2006-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fuse structure and method for making the same |
| US7651893B2 (en) * | 2005-12-27 | 2010-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal electrical fuse structure |
| CN105789178A (en) * | 2014-12-25 | 2016-07-20 | 中航（重庆）微电子有限公司 | Fuse structure, semiconductor device comprising fuse structure and preparation method |
| CN109087904B (en) * | 2018-08-01 | 2021-02-09 | 成都光启机电设备工程有限公司 | Trimming resistor and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02277264A (en) * | 1989-04-18 | 1990-11-13 | Toyota Autom Loom Works Ltd | Trimming resistor |
| CN1165390A (en) * | 1996-04-17 | 1997-11-19 | 住友电装株式会社 | Fuse combination, method of making the same, and fuse circuit including the same |
| US6074940A (en) * | 1997-07-26 | 2000-06-13 | Samsung Eletronics Co., Ltd. | Method of making a fuse in a semiconductor device and a semiconductor device having a fuse |
| US6261873B1 (en) * | 1999-04-29 | 2001-07-17 | International Business Machines Corporation | Pedestal fuse |
-
2002
- 2002-05-15 CN CNB021197210A patent/CN100388436C/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02277264A (en) * | 1989-04-18 | 1990-11-13 | Toyota Autom Loom Works Ltd | Trimming resistor |
| CN1165390A (en) * | 1996-04-17 | 1997-11-19 | 住友电装株式会社 | Fuse combination, method of making the same, and fuse circuit including the same |
| US6074940A (en) * | 1997-07-26 | 2000-06-13 | Samsung Eletronics Co., Ltd. | Method of making a fuse in a semiconductor device and a semiconductor device having a fuse |
| US6261873B1 (en) * | 1999-04-29 | 2001-07-17 | International Business Machines Corporation | Pedestal fuse |
| US20010034084A1 (en) * | 1999-04-29 | 2001-10-25 | International Business Machines Corporation | Method for making a pedestal fuse |
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| CN1459831A (en) | 2003-12-03 |
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