CN100385637C - Fabricating method for lead frame of integrated circuit, and lead frame prepared by the method - Google Patents
Fabricating method for lead frame of integrated circuit, and lead frame prepared by the method Download PDFInfo
- Publication number
- CN100385637C CN100385637C CNB2006100274562A CN200610027456A CN100385637C CN 100385637 C CN100385637 C CN 100385637C CN B2006100274562 A CNB2006100274562 A CN B2006100274562A CN 200610027456 A CN200610027456 A CN 200610027456A CN 100385637 C CN100385637 C CN 100385637C
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- China
- Prior art keywords
- lead frame
- wire frame
- leading wire
- processing
- clamping heads
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The present invention discloses an improved processing method of an integrated circuit leading wire frame and a leading wire frame processed by using the method. The method comprises the processes that a leading wire frame needing clinching process is clamped on a processing mould, the processing mould comprises two clamping heads, and the two clamping heads respectively clamp both sides of a part needing clinching in a displacement way on the leading wire frame; the two clamping heads make corresponding displacement movement in the direction vertical to the clamping surface of the leading wire frame; the leading wire frame is disassembled from the clamping heads; the clinching process is completed. The present invention is characterized in that the distance between the opposite lateral faces of the two clamping heads is between one mil and two mils. The method causes the width of the processed clinched position of the leading wire frame to be minimized, greatly saves space and is good for reducing the volume of an integrated circuit package or enlarging the dimension of a package sheet; simultaneously, because of cutting, the metal rebound is small, and thus, the present invention is convenient to control the flatness of a wiring region.
Description
Technical field
The present invention relates to a kind of processing method of circuit lead frame, more specifically, the shearing that the relates to a kind of circuit lead frame processing method of bending.The present invention also provides a kind of circuit lead frame that uses this method processing.
Background technology
Integrated circuit package structure generally includes a lead frame, and this lead frame comprises a slide holder and a distribution area and the terminal pin that is communicated with the distribution area; Ic core is on chip to be attached on this slide holder, and integrated circuit (IC) chip is connected with the distribution area by gold thread, forms integrated circuit (IC) chip by the path of terminal pin to the outside exchange transmission signal of telecommunication.Those structures form packaged integrated circuit through the plastic packaging mold pressing.
The standard design of present partly integrated circuit lead frame (as TO series) structure is that the distribution area and the overhanging lead-in wire of lead frame is in same plane, and be higher than slide holder, with it not on same plane.So just cause that to use gold thread to carry the distribution drop of chip and lead district very big, can cause two problems thus: 1. gold thread bending, in plastic packaging operation subsequently easily by plastic packaging material towards bending, be easy to cause short circuit; 2. gold thread is longer, and the excessive distribution camber that causes of drop is bigger, has waste of material, is unfavorable for reducing the encapsulation price.Therefore, a kind of new method is by the sinking of being bended in the distribution zone of lead frame, can reduce the drop of distribution significantly, effectively saves gold thread, and impact resistance has also obtained reinforcement.
There is a kind of metal material method of bending at present, but be not applied in the processing aspect of bending, lead frame distribution area as yet, as shown in Figure 1, finish by means of having a pair of relative chuck 6a and the anchor clamps of 6b, metal material 10 is placed in the cavity of mould, two chuck 6a and 6b keep a distance X and clamp the zone to be processed of metal material 10 respectively, right latter two chuck carries out relative displacement perpendicular to material 10 clamping faces, thereby to metal material 10 application of forces, utilize the ductility of metal, with metal material 10 bendings.But, if the method for directly this kind being bended is applied in the processing in the distribution zone of lead frame, make the distribution area to the sinking of bending of slide holder direction, the crooked position width X that the then this mode of bending forms is bigger, the resilience of metal in addition, the evenness after difficult control is bended.Like this, for a lot of compact package (as QFN/DFN etc.), in a certain size plastic packaging space,, can influence the width in paster zone greatly if the length of bending of distribution area is excessive; And adding man-hour at framework, the control of the evenness of its distribution area is also cumbersome.
Summary of the invention
The present invention be directed to above-mentioned method for metal working and be applied in the defective that has now on the circuit lead frame, a kind of shearing processing method of lead frame is proposed, promptly, avoid producing excessive X length as shown in Figure 1, the mode that lead frame is bended changes the dislocation cut mode into from the bending mode, the width at the position of bending is minimized, saved the space greatly, help reducing the volume of integrated circuit encapsulation or enlarge the load size; Simultaneously,, make that its metal resilience is very little, be convenient to the evenness in distribution zone is controlled because this kind sheared the application of processing method.
Another object of the present invention is to provide a kind of circuit lead frame that uses this kind processing method to produce.
For realizing purpose of the present invention, the invention provides a kind of processing method of circuit lead frame, may further comprise the steps:
A) lead frame with required processing is clamped on the processing mold, and described processing mold comprises two relative chucks, and described two chucks are to be close to the both sides that the mode of fitting clamps the position of need bending on the described lead frame;
B) described two chucks are done relative displacement with the direction perpendicular to the clamping face of described lead frame;
C) described lead frame is taken off from described chuck, finish the processing of bending.
Preferably, when described two chucks need bend the position on clamping described lead frame, the distance of fitting between its relative side was between 1mil to 2mil.
Like this, because the distance between two chuck sides of mould is very little, almost be adjacent to mutually, therefore, relative displacement by two chucks is during to the lead frame application of force, utilize the extension slipping property of metal material, metal is bended with the dislocation shear pattern, but not the bending of the elasticity of original form is bended.The result of this method of bending has further dwindled the length of lead frame on the one hand, thereby reduces encapsulation volume; Metal resilience that the more important thing is this kind processing mode on the other hand is very little, is convenient to the evenness in distribution zone is controlled.
Preferably, the distance of described relative displacement is half of described blaster fuse frame material thickness.
Use said method can realize another object of the present invention, promptly provide to have the lead frame that the cut mode dislocation is bended.
The lead frame that uses processing method provided by the invention and use this processing method to make, thus the length that both can reduce lead frame is saved encapsulated space, can avoid again producing the metal resilience, is convenient to the evenness in distribution zone is controlled.
Description of drawings
Fig. 1 is the schematic side view of the processing mode that bends of metal material employing in the prior art;
Fig. 2 is the schematic side view of shearing bending machining mode of the present invention;
Fig. 3 is a schematic side view of utilizing the lead frame that the inventive method produces.
Embodiment
Be described further below with reference to the technique effect of accompanying drawing, to understand the present invention fully design of the present invention, concrete structure and generation.
Lead frame processing method of the present invention please refer to Fig. 2, mould same among utilization and prior art Fig. 1 is finished, this mould has two chuck 6a and 6b, and lead frame 10 is placed in the cavity of mould, the zone to be processed that two chuck 6a and 6b clamp lead frame respectively.Unlike the prior art be that two chuck 6a of mould side relative with 6b is close to fits.In the present embodiment, when two chucks are fitted, distance X between its two opposite side surfaces is 1mil, two chucks keep this distance to clamp the both sides of lead frame 10 machining areas respectively, it is motionless that chuck 6b keeps, and chuck 6a carries out relative displacement with the direction perpendicular to the lead frame clamping face with respect to chuck 6b, utilizes the cold draw slipping property, form the dislocation shearing and bend, as shown in Figure 2.The distance of shearing the degree of depth and be relative displacement is by frame material intensity and thickness decision thereof, is generally half thickness of lead frame distribution area material.The thickness of lead frame distribution region material is generally between 5mil～20mil, so the distance of the dislocation after the relative displacement is generally about 2.5mil～10mil.After the processing, make that the frame material length after the processing minimizes like this, promptly the length of X1 is obviously dwindled among the relative Fig. 1 of X1, has saved the space greatly; Metal resilience after the dislocation of this kind extension simultaneously processing is very little, is convenient to the evenness in distribution zone is controlled.
Among the present invention, the distance between two chucks is not limited to 1mil.According to practical operation, for realize shearing processing and prevent that lead frame from being cut off, the distance between two chucks generally can remain between 1mil～2mil, all can realize purpose of the present invention well.
Figure 3 shows that the lead frame structure figure that adopts after this method is processed, lead frame 10 comprises slide holder 101 and is used for the block 102 that the signal of telecommunication is connected, chip 11 is fixed on the slide holder 101 of lead frame, by gold thread 12 block 102 of chip 11 with lead frame electrically connected, specifically be meant in the present embodiment, gold thread be welded on the distribution zone of terminal pin.By shearing processing method shown in Figure 2, make the distribution zone of lead frame 10 shear to slide holder 101 directions, during side-looking, the distribution zone has the step shape to the slide holder direction, i.e. the dislocation bending part of an approximate right angle.Like this, making provides the lead frame 10 and the radian of the gold thread 12 of chip 11 electric connections to reduce, and has effectively saved gold thread, reduces packaging cost; Strengthen the impact resistance of gold thread simultaneously, made it not flexible when the plastic packaging encapsulating, avoided the possibility of short circuit to a great extent.
The present invention not only is applicable to the processing of bending of lead-in wire above-mentioned zone, also is not limited to specific lead frame, bend all available this method of method of sinking/rising of the shearing of the optional position of any lead frame.
Claims (3)
1. circuit lead frame processing method, this method may further comprise the steps:
A) lead frame with required processing is clamped on the processing mold, and described processing mold comprises two relative chucks, it is characterized in that, described two chucks are to be close to the both sides that the mode of fitting clamps the position of need bending on the described lead frame;
B) described two chucks are done relative displacement with the direction perpendicular to the clamping face of described lead frame;
C) described lead frame is taken off from described chuck, finish the processing of bending.
2. circuit lead frame processing method as claimed in claim 1 is characterized in that, when described two chucks need bend the position on clamping described lead frame, the distance of fitting between its relative side was more than or equal to 1mil and smaller or equal to 2mil.
3. circuit lead frame processing method as claimed in claim 1 is characterized in that, described relative displacement is the bend material thickness at position of the dislocation of half described lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100274562A CN100385637C (en) | 2006-06-08 | 2006-06-08 | Fabricating method for lead frame of integrated circuit, and lead frame prepared by the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100274562A CN100385637C (en) | 2006-06-08 | 2006-06-08 | Fabricating method for lead frame of integrated circuit, and lead frame prepared by the method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1873934A CN1873934A (en) | 2006-12-06 |
| CN100385637C true CN100385637C (en) | 2008-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100274562A Active CN100385637C (en) | 2006-06-08 | 2006-06-08 | Fabricating method for lead frame of integrated circuit, and lead frame prepared by the method |
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| Country | Link |
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| CN (1) | CN100385637C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105161299A (en) * | 2015-09-29 | 2015-12-16 | 株洲宏达陶电科技有限公司 | Preparation method for multi-core-set porcelain capacitor lead wire and lead wire |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02308563A (en) * | 1989-05-23 | 1990-12-21 | Shinko Electric Ind Co Ltd | Lead frame |
| JPH06260586A (en) * | 1993-03-09 | 1994-09-16 | Hitachi Ltd | Semiconductor device |
| JPH113963A (en) * | 1997-06-12 | 1999-01-06 | Sony Corp | Resin-sealed semiconductor device and lead frame |
| JP2000260797A (en) * | 1993-08-09 | 2000-09-22 | Hitachi Ltd | Manufacture of semiconductor device |
| US6376901B1 (en) * | 1999-06-08 | 2002-04-23 | Texas Instruments Incorporated | Palladium-spot leadframes for solder plated semiconductor devices and method of fabrication |
-
2006
- 2006-06-08 CN CNB2006100274562A patent/CN100385637C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02308563A (en) * | 1989-05-23 | 1990-12-21 | Shinko Electric Ind Co Ltd | Lead frame |
| JPH06260586A (en) * | 1993-03-09 | 1994-09-16 | Hitachi Ltd | Semiconductor device |
| JP2000260797A (en) * | 1993-08-09 | 2000-09-22 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH113963A (en) * | 1997-06-12 | 1999-01-06 | Sony Corp | Resin-sealed semiconductor device and lead frame |
| US6376901B1 (en) * | 1999-06-08 | 2002-04-23 | Texas Instruments Incorporated | Palladium-spot leadframes for solder plated semiconductor devices and method of fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1873934A (en) | 2006-12-06 |
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