CN100383891C - Carbon nano tube magnetic random access storge - Google Patents
Carbon nano tube magnetic random access storge Download PDFInfo
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- CN100383891C CN100383891C CNB2004100743509A CN200410074350A CN100383891C CN 100383891 C CN100383891 C CN 100383891C CN B2004100743509 A CNB2004100743509 A CN B2004100743509A CN 200410074350 A CN200410074350 A CN 200410074350A CN 100383891 C CN100383891 C CN 100383891C
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
Abstract
The present invention discloses a magnetic random access memory (MRAM) which adopts carbon nanometer tubes as barrier layers. The magnetic thin film memory unit of the MRAM unit is a magnetic tunnel junction (MTJ) which adopts the carbon nanometer tubes as the barrier layers, and the information write operation of the MRAM unit is completed by the combined action of magnetic fields which are generated by one current parallel to the magnetic thin film memory unit and the other current perpendicular to and flowing the magnetic thin film memory unit. The present invention which adopts the carbon nanometer tubes as the barrier layers ensures the uniformity of the resistance of the tunnel junction, and simultaneously overcomes lots of defects caused by adopting Al2O3 as the barrier layer, such as pinholes, etc.
Description
Technical field
The present invention relates to a kind of magnetoresistance effect multilayer film that get up by latest developments and can constitute random access memory (RAM, Random Access Memory) mnemon in, this RAM is so-called electrodes of magnetoresistive random access memory (Magnetoresistive RAM), is called for short MRAM.
Background technology
One, the magnetic memory cell among the MRAM
As the storage unit of MRAM, comprise a such membrane structure in the thin magnetic film at least: [F1/NF/F2].Wherein F1 and F2 represent two magnetic material layers, and NF represents layer of non-magnetic material, and the NF layer is between F1 layer and F2 layer.The direction of magnetization that has and only have one deck among F1 and the F2 is fixed (being called nailed layer) by the material of extraneous certain layer or several layers, thus can not be under little external magnetic field effect random variation; And one deck is a soft magnetosphere in addition, and its direction of magnetization can change (being called free layer) under little external magnetic field effect.The thickness of layer of non-magnetic material is very little, and typical thickness is between 0.5nm and 3.0nm.As storage unit, when the direction of magnetization of F1, F2 was identical, the thin magnetic film storage unit showed low resistance states with such thin magnetic film; And when the direction of magnetization of F1, F2 was opposite, the thin magnetic film storage unit then showed high resistance states.
Therefore, the thin magnetic film storage unit exists two stable resistance states, and free layer can make it recorded information with respect to the direction of magnetization of nailed layer in the thin magnetic film storage unit by changing; And, can obtain the information of its preservation by detecting the resistance states of thin magnetic film storage unit.
Usually the magnetic film structure that adopts is at present: Ta (5nm)/Cu (20nm)/Py (5nm)/IrMn (10nm)/CoFe (4nm)/Al (1.0nm)-oxide/CoFe (4nm)/Py (20nm)/Cu (20nm)/Ta (5nm).The also useful FeMn of pinning material, PtMn's, industrial general employing FeMn is because its price is relatively cheap.Free layer and nailed layer can change to some extent because of requiring different-thickness, and the method that adopts artificial pinning is also arranged recently.The key factor that influences MTJ (MTJ) performance is a barrier layer, the quality of barrier layer directly has influence on the size of the long-pending arrow (RA) of the size of tunnel junction magneto-resistor ratio (TMR) and resistance and interface area, and these two indexs just MTJ as the place of the key of a MRAM part.More general way is Al at present
2O
3As barrier layer.Al
2O
3There are a lot of problems as barrier layer: at first, Al
2O
3The general Al film about growth 1 nanometer earlier that adopts, oxidation forms Al then
2O
3Generally need take a long time and between oxygen debtization and peroxidating, seek good oxidization time.Be difficult to form large-area even oxidation in addition, the tunnel junction of working it out so just is difficult to guarantee the homogeneity of resistance, forms a lot of defectives simultaneously easily, and (as pinhole etc.) reduces the TMR effect.Secondly, the particle of Al is bigger, therefore is difficult for the very thin film of growth, and effectively to reduce the value of RA, the membrane structure of the other materials of continued growth thereon simultaneously also is subjected to very big influence.
Two, typical mram cell structure
The structure of the thin magnetic film storage unit that adopts usually as shown in Figure 1 at present.This MRAM structural arrangements needs three metal wiring layer M1, M2, M3 and a transition metal layer TM altogether on Semiconductor substrate.Except readout word line RWL, its ground wire GND, write word line WWL are in respectively in the different metal wiring layers with bit line BL.The thin magnetic film storage unit is connected with the drain region of transistor ATR by transition metal layer TM, metal wiring layer M2, M1 and relevant contact hole, and the source region of transistor ATR then is connected with ground wire GND, and the grid of transistor ATR also is readout word line RWL simultaneously.
Information writes to be worked in coordination with by bit line BL and write word line WWL and finishes in the thin magnetic film storage unit.When bit line BL and write word line WWL with the certain time sequence relation when writing working current, the resultant magnetic field in both magnetic field that electric current produced will make the direction of magnetization of free layer in the thin magnetic film storage unit be turned to specific direction, and this direction of magnetization can be stabilized in a state that is supposed in two steady state (SS) after the electric current of cancelling bit line BL, write word line WWL.Promptly realized writing and preserving of information in the thin magnetic film storage unit thus.
The information that reads in the thin magnetic film storage unit is then controlled by readout word line RWL.When allowing to read, readout word line RWL is on a suitable level in control, makes transistor ATR conducting.Exist this moment one by bit line BL (metal wiring layer M3) through thin magnetic film storage unit, transition metal layer TM, contact hole, metal wiring layer M2, contact hole, metal wiring layer M1, contact hole, transistor ATR drain region, transistor ATR source region and the electric path of the ground wire GND that arrives.Therefore, give a suitable read current, can extract the current resistance states of thin magnetic film storage unit by bit line BL.Promptly realized reading of information in the thin magnetic film storage unit thus.
As mentioned above, the MRAM of this kind structure need reach three metal wiring layer and a transition metal layer and form it and be electrically connected, and makes manufacturing process complexity, the cost height of MRAM.In addition, before making the thin magnetic film storage unit, technological operations such as deposition for several times, wiring, punching, insulating medium landfill have been passed through on the substrate, make that the profile pattern of thin magnetic film storage unit manufacturing face is relatively poor, must carry out special surface and throw flat PROCESS FOR TREATMENT (such as chemically mechanical polishing CMP, Chemical-Mechanical Polishing) could satisfy the specific (special) requirements of thin magnetic film memory films to its substrate surface planarization, this also is a problem that increases technology difficulty and manufacturing cost.
Summary of the invention
At the problem of above-mentioned existence, the object of the present invention is to provide a kind ofly with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, guaranteed the homogeneity of tunnel junction resistance, overcome employing Al simultaneously
2O
3Defective as barrier layer formation.
For achieving the above object, the invention provides a kind ofly, comprising: the memory cell array that constitutes as the thin magnetic film storage unit of barrier layer by carbon nano-tube with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer; By the memory read/write control module array that transistor ATR unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate; Transition metal layer, described thin magnetic film storage unit is connected with described transistor ATR unit via this transition metal layer; And word line WL (Word Line) and bit line BL (Bit Line), described word line WL also is the grid of described transistor ATR simultaneously, described bit line BL is arranged in the top of described thin magnetic film storage unit, vertical mutually with described word line WL, directly link to each other with described thin magnetic film storage unit, and vertical with the direction of easy axis of thin magnetic film storage unit.In addition, on the described bit line BL of each bar in the MRAM array current-limiting mechanism is set, its effect is the maximum current that limits its place current path institute energy process.
The invention provides another kind ofly, comprising: the memory cell array that constitutes as the thin magnetic film storage unit of barrier layer by carbon nano-tube with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer; By the memory read/write control module array that transistor ATR unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate; Transition metal layer, described thin magnetic film storage unit is connected with described transistor ATR unit via this transition metal layer; And word line WL and two bit lines BL1, BL2, described word line WL also is the grid of described transistor ATR simultaneously, described two bit lines BL1, BL2 are arranged in the top of described thin magnetic film storage unit, bit line BL1 is vertical mutually with described word line WL, and it is vertical with the direction of easy axis of thin magnetic film storage unit, bit line BL2 directly links to each other with described thin magnetic film storage unit, and is isolated mutually by an insulation course and bit line BL1.
The invention provides another with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube, comprising: the memory cell array that constitutes as the thin magnetic film storage unit of barrier layer by carbon nano-tube as barrier layer; By the memory read/write control module array that transistor ATR unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate; Contact hole and transition metal layer, described thin magnetic film storage unit is connected with described transistor ATR unit with transition metal layer via this contact hole; And two word line WL1, WL2 and bit line BL, described word line WL1 also is the grid of described transistor ATR simultaneously, described word line WL2 and described bit line BL are arranged in the top of described thin magnetic film storage unit, described bit line BL is vertical mutually with described word line WL2, and it is vertical with the direction of easy axis of thin magnetic film storage unit, word line WL2 directly links to each other with described thin magnetic film storage unit, and is isolated mutually by an insulation course and bit line BL.
The present invention adopts carbon nano-tube as barrier layer, has guaranteed the homogeneity of tunnel junction resistance, has overcome employing Al simultaneously
2O
3The many defectives that form as barrier layer are as pinhole etc.
Description of drawings
Fig. 1 is the schematic three dimensional views of the MAGNETIC RANDOM ACCESS MEMORY mram cell structure of prior art;
Fig. 2 is the mram cell structural representation that the present invention adopts the MAGNETIC RANDOM ACCESS MEMORY embodiment 1 of vertical current writing mode;
Fig. 3 is first cut-open view of the mram cell structure of embodiments of the invention 1;
Fig. 4 is the overall schematic of the mram cell structure additional bit line current current-limiting mechanism of embodiments of the invention 1;
Fig. 5 is a vertical write current and the space magnetic field synoptic diagram of parallel write current in the generation of thin magnetic film storage unit place among the present invention;
Fig. 6 is the mram cell structural representation that the present invention adopts the MAGNETIC RANDOM ACCESS MEMORY embodiment 2 of vertical current writing mode;
Fig. 7 is first cut-open view of the mram cell structure of embodiments of the invention 1.
Fig. 8 is the mram cell structural representation of the variation of the present invention MAGNETIC RANDOM ACCESS MEMORY embodiment 2 of adopting the vertical current writing mode;
Fig. 9 is first cut-open view of mram cell structure of the variation of embodiments of the invention 2.
Embodiment
Preparation nanotube barrier layer.
For overcoming Al
2O
3As the existing problem of barrier layer, we adopt nanotube as barrier layer.Specific practice is as follows: grow earlier cushion and pinning layer Ta (5nm)/Cu (20nm)/Py (5nm)/IrMn (10nm)/CoFe (4nm), one deck SiO then grows
2, adopt electron beam exposure to add the method for chemical reaction etching or employing focused ion beam at SiO
2The hole of some 1～100 nanometers of processing on the film, the bottom, cavity communicates with CoFe.Growing nano-tube in these holes, the length of control nanotube makes it expose the hole slightly.At last at SiO
2Superficial growth free layer: CoFe (4nm)/Py (20nm)/Cu (20nm)/Ta (5nm).Have two kinds of methods can change the resistance of MTJ: the one, the quantity in control cavity, and then the quantity of control nanotube; The one, the diameter of control nanotube.Can easier control the height of potential barrier like this, can go up largely again simultaneously and improve with Al
2O
3The unfavorable factor of bringing as potential barrier.
Embodiment 1:
As Fig. 2, shown in Figure 3, thin magnetic film memory cell array in the mram memory is combined by a large amount of mram cell 1, in a mram cell 1, comprise one with carbon nano-tube thin magnetic film storage unit 2, transistor ATR 4, transition metal layer 3b, contact hole 3e and 3f and one group of wiring, that is: bit line BL 3a, word line WL 3d and ground wire GND 3c as barrier layer.Thin magnetic film storage unit 2 interconnects by transition metal layer 3b with transistor ATR 4.On the layout bit line BL 3a is arranged in thin magnetic film storage unit 2 above and directly link to each other with thin magnetic film storage unit 2, simultaneously vertical mutually with the direction of easy axis of thin magnetic film storage unit 2.
As shown in Figure 3, whole M ram cell 1 is made of several layers 5a, 5b, 5c, 5d, 5e, and the non-functional area in these layers is buried the medium landfill by insulation.Metal wiring layer only has two- layer 5b, 5d in mram cell 1, i.e. bit line BL 3a place layer 5d and ground wire GND 3c, transition metal layer 3b place layer 5b.Below and its upper electrode that thin magnetic film storage unit 2 is arranged in bit line BL 3a directly are connected with bit line BL 3a; The lower electrode of thin magnetic film storage unit 2 is connected with the drain electrode 4c of transistor ATR 4 by transition metal layer 3b, contact hole 3f.The easy magnetizing axis of the free layer in the thin magnetic film storage unit 2 is vertical mutually with the long side direction of bit line BL 3a.
In order to make the electric current on the write operation process neutrality line BL 3a can have the one part of current of suitable size to branch to by thin magnetic film storage unit 2 to the path of ground wire GND 3c, need on each the bit lines BL in the MRAM array one or several current-limiting mechanism be set, be illustrated in figure 4 as the synoptic diagram that a current-limiting mechanism is set.Like this, the electric current on bit line BL is less than the current limit of current-limiting mechanism, i.e. I≤I
sThe time, most electric current all from bit line by and the shunting of the thin magnetic film storage unit 2 of not flowing through.I
sConcrete size determine by the magnetization reversal characterisitic parameter of thin magnetic film storage unit, and make size for I
sThe magnetic field that produces of electric current can not cause the magnetization reversal of thin magnetic film storage unit.As I＞I
sThe time, under the effect of current-limiting mechanism, make I
1=I
sAnd I
1+ I
2At this moment=I just exists two mutually perpendicular electric current I
1And I
2, the former is surperficial parallel with the thin magnetic film storage unit, and the Surface Vertical of the latter and thin magnetic film storage unit.By this electric current I
1And I
2The magnetic field at the thin magnetic film storage unit free layer place that produces is (I as shown in Figure 5
2Distribution be example with a distribution of current).By electric current I
1The magnetic field that produces is on the easy axis of property thin film memory cell, and by electric current I
2The magnetic field that produces then is the toroidal magnetic field in the free aspect of thin magnetic film storage unit, by the argumentation of background technology part as can be known, under such resultant magnetic field acts on, can realize the magnetization reversal of thin magnetic film storage unit, i.e. the writing of information among the MRAM.At this moment I
2=I-I
1=I-I
s, its size is also determined by the magnetization reversal characterisitic parameter of thin magnetic film storage unit, and is made size be I
2And I
sThe resultant magnetic field that produces of electric current can cause the magnetization reversal of thin magnetic film storage unit.For the drive current of MRAM array outside, the write current of the MRAM of present embodiment has only one, i.e. I=I
S+ I
2
Thus, with Fig. 5, unit shown in Figure 6 is an example, in the addressing read operation of MRAM, at first be that selecteed word line WL 3d gives a suitable level so that transistor ATR 4 is in conducting state, be to import a read current on the selecteed bit line BL 3a then, then read current by bit line BL 3a through thin magnetic film storage unit 2, transition metal layer 3b, contact hole 3f, the transistor ATR 4c that drains, transistor ATR source electrode 4a, contact hole 3e and reach ground wire GND 3c, thereby obtain the current resistance states of thin magnetic film storage unit 2, i.e. data of being stored in the mram cell 1; In the addressing write operation of MRAM, at first also be that selecteed word line WL 3d gives a suitable level so that transistor ATR 4 is in conducting state, on bit line BL 3a, import write current then.This write current is divided into the shunting I that is parallel to selected thin magnetic film storage unit 2 under the effect of current-limiting mechanism
1With perpendicular to the shunting I of the selected thin magnetic film storage unit 2 and the selected thin magnetic film storage unit 2 to GND 3c of flowing through
2, the resultant magnetic field that they produce will cause the magnetization reversal of thin magnetic film storage unit, also promptly finish writing of data.
Current-limiting mechanism on the bit line BL can be provided with and be integrated in the peripheral circuit of MRAM array, and it can be made of diode, triode etc.
Embodiment 2:
As Fig. 6, shown in Figure 7, in a mram cell 1, comprise one with carbon nano-tube thin magnetic film storage unit 2, transistor ATR 4, transition metal layer 3b, contact hole 3e and 3f and one group of wiring, that is: bit line BL1 3a, bit line BL2 3g, word line WL 3d and ground wire GND 3c as barrier layer.Thin magnetic film storage unit 2 interconnects by transition metal layer 3b with transistor ATR 4.On layout, the top and the bit line BL2 3g that bit line BL1 3a, BL2 3g are arranged in thin magnetic film storage unit 2 directly link to each other with thin magnetic film storage unit 2, and be simultaneously vertical mutually with the easy magnetizing axis of thin magnetic film storage unit 2; Bit line BL1 3a and BL2 3g are isolated by insulation course 5e, and both are parallel to each other.
As shown in Figure 7, whole M ram cell 1 is made of several layers 5a, 5b, 5c, 5d, 5e, 5f, 5g, and the non-functional area in these layers is buried the medium landfill by insulation.Metal wiring layer has three layers of 5b, 5d and 5f in mram cell 1, i.e. bit line BL1 3a place layer 5f, bit line BL2 3g place layer 5d and ground wire GND 3c, transition metal layer 3b place layer 5b.Below and its upper electrode that thin magnetic film storage unit 2 is arranged in bit line BL1 3a, BL2 3g directly are connected with bit line BL2 3g; The lower electrode of thin magnetic film storage unit 2 is connected with the drain electrode 4c of transistor ATR 4 by transition metal layer 3b, contact hole 3f.The direction of easy axis of the free layer in the thin magnetic film storage unit 2 is vertical mutually with the long side direction of bit line BL1 3a, BL2 3g, and bit line BL1 3a and BL2 3g are parallel to each other.
In the addressing read operation of present embodiment, at first be that selecteed word line WL 3d gives a suitable level so that transistor ATR 4 is in conducting state, be that selecteed bit line BL23g goes up read current of importing then, then read current reaches ground wire GND 3c by bit line BL2 3g through thin magnetic film storage unit 2, transition metal layer 3b, contact hole 3f, transistor ATR drain electrode 4c, transistor ATR source electrode 4a, contact hole 3e, thereby obtain the current resistance states of thin magnetic film storage unit 2, i.e. data of being stored in the mram cell 1; In the addressing write operation, at first also be that selecteed word line WL 3d gives a suitable level so that transistor ATR 4 is in conducting state, on bit line BL1 3a, BL2 3g, concern the write current that imports separately then with certain time sequence.Electric current on the bit line BL1 3a is parallel to selected thin magnetic film storage unit 2, electric current on the bit line BL23g will be flowed through selected thin magnetic film storage unit 2 and be arrived GND 3c, the resultant magnetic field that they produce will cause the magnetization reversal of thin magnetic film storage unit, the people that writes who has also promptly finished data.
Compare with embodiment 1, current-limiting mechanism has been cancelled in this enforcement, realizes configuration respectively to two write currents to increase by a bit lines.
The variation of embodiment 2:
As Fig. 8, shown in Figure 9, this variation with the direction of the bit line BL2 3g among the embodiment 2 from parallel with bit line BL1 3a change into parallel with word line WL 3d.Name with word line WL2 in this example, change original word line into WL1 to show difference simultaneously.The structure of other parts all with basically identical described in the embodiment 2, repeat no more here.
In the addressing read operation of this variation, at first be that selecteed word line WL1 3d gives a suitable level so that transistor ATR 4 is in conducting state, be that selecteed word line WL23g goes up read current of importing then, then read current reaches ground wire GND 3c by word line WL2 3g through thin magnetic film storage unit 2, transition metal layer 3b, contact hole 3f, transistor ATR drain electrode 4c, transistor ATR source electrode 4a, contact hole 3e, thereby obtain the current resistance states of thin magnetic film storage unit 2, i.e. data of being stored in the mram cell 1; In the addressing write operation, at first also be that selecteed word line WL1 3d gives a suitable level so that transistor ATR 4 is in conducting state, on bit line BL 3a, word line WL2 3g, concern the write current that imports separately then with certain time sequence.Electric current on the bit line BL 3a is parallel to selected thin magnetic film storage unit 2, electric current on the word line WL2 3g will be flowed through selected thin magnetic film storage unit 2 and be arrived GND 3c, the resultant magnetic field that they produce will cause the magnetization reversal of thin magnetic film storage unit 2, also promptly finish writing of data.
This variation is suitable with manufacturing, control and effect, the effect of embodiment 2 basically.
Claims (23)
1. one kind with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, comprising:
A) the memory control unit array that constitutes by transistor ATR (4) unit, this control module array is integrated in the Semiconductor substrate;
B) memory cell array that constitutes by thin magnetic film storage unit (2);
C) contact hole (3e, 3f) and transition metal layer, described thin magnetic film storage unit (2) is connected with described transistor ATR (4) unit with transition metal layer via contact hole (3f);
D) word line WL (3d) and bit line BL (3a), described bit line BL (3a) are arranged in the top of described thin magnetic film storage unit (2), directly are connected and vertical with the direction of easy axis of thin magnetic film storage unit with it;
It is characterized in that the barrier layer of described thin magnetic film storage unit (2) is a carbon nano-tube.
2. a kind ofly it is characterized in that with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube also be provided with current-limiting mechanism, this current-limiting mechanism can be made of diode, triode according to claim 1 is described as barrier layer; One or more current-limiting mechanism all is connected respectively in the peripheral circuit that is arranged on the MRAM array with each bit lines BL.
3. according to claim 1 or 2 described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, it is characterized in that, the basic structure of described thin magnetic film storage unit (2) is made of two-layer magnetic material layer and the layer of non-magnetic material between two magnetospheres, and canned data is represented by the magnetized state of one of them magnetic material layer and preserved.
4. described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 3, it is characterized in that, described bit line BL (3a) is vertical mutually with described word line WL (3d), and the direction of easy axis of described thin magnetic film storage unit (2) is vertical mutually with described bit line BL (3a).
5. a kind ofly it is characterized in that according to claim 4 is described that described word line WL (3d) is simultaneously as the grid of described transistor ATR (4) unit with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer.
6. described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 5, it is characterized in that, in the process of sense information, described transistor ATR (4) conducting, read current are introduced by described bit line BL (3a) and are obtained canned data in the described thin magnetic film storage unit (2).
7. described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 6, it is characterized in that, the interior metal wiring layer is total up to two-layer, promptly described bit line BL (3a) place layer (5d) and described transition metal layer (3b) and ground wire GND (3c) place layer (5b).
8. one kind with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, comprising:
A) the memory read/write control module array that constitutes by transistor ATR (4) unit, this read-write control unit array is integrated in the Semiconductor substrate;
B) memory cell array that constitutes by thin magnetic film storage unit (2);
C) contact hole (3e, 3f);
D) word line WL (3d) and two bit lines BL1 (3a), BL2 (3g);
E) transition metal layer (3b); Described thin magnetic film storage unit (2) is connected with described transistor ATR (4) unit with described contact hole (3f) via this transition metal layer (3b); Described bit line BL1 (3a) and BL2 (3g) are isolated, are parallel to each other on direction by insulating medium, and described bit line BL2 (3g) directly is connected with described thin magnetic film storage unit (2) simultaneously.
It is characterized in that the barrier layer of described thin magnetic film storage unit (2) is made by carbon nano-tube.
9. described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 8, it is characterized in that, the basic structure of described thin magnetic film storage unit (2) is made of two-layer magnetic material layer and the layer of non-magnetic material between two magnetospheres, and canned data is represented by the magnetized state of one of them magnetic material layer and preserved.
10. according to claim 9 or 10 described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, it is characterized in that, the direction of described bit line BL1 (3a) and BL2 (3g) is vertical with the direction of easy axis of described thin magnetic film storage unit (2), and vertical mutually with the direction of described word line WL (3d).
11. a kind ofly it is characterized in that according to claim 10 is described described word line WL (3d) is simultaneously as the grid of described transistor ATR (4) unit with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer.
12. it is described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 11, it is characterized in that, in the process of sense information, described transistor ATR (4) conducting, read current are introduced by described bit line BL2 (3g) and are obtained canned data in the described thin magnetic film storage unit (2).
13. it is described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 12, it is characterized in that, its write operation process by the electric current that is parallel to described thin magnetic film storage unit (2) on the described bit line BL1 (3a) with introduce from described bit line BL2 (3g), finish perpendicular to the acting in conjunction of the electric current of the thin magnetic film storage unit (2) and the described thin magnetic film storage unit (2) of flowing through.
14. it is described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 13, it is characterized in that, the interior metal wiring layer is total up to three layers, promptly described bit line BL (3a) place layer, described bit line BL (3g) place layer and described ground wire GND (3c) and transition metal layer (3b) place layer.
15. one kind with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, comprising:
A) the memory read/write control module array that constitutes by transistor ATR (4) unit, this read-write control unit array is integrated in the Semiconductor substrate;
B) memory cell array that constitutes by thin magnetic film storage unit (2);
C) contact hole (3e, 3f);
D) two word line WL1 (3d), WL2 (3g) and bit line BL (3a); Described word line WL2 (3g) directly is connected with described thin magnetic film storage unit (2) and is vertical mutually with described bit line BL (3a);
It is characterized in that the barrier layer of described thin magnetic film storage unit (2) is made by carbon nano-tube.
16. it is described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 15, it is characterized in that, the basic structure of described thin magnetic film storage unit (2) is made of two-layer magnetic material layer and the layer of non-magnetic material between two magnetospheres, and canned data is represented by the magnetized state of one of them magnetic material layer and preserved.
17. it is described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 16, it is characterized in that, described bit line BL (3a) is vertical with the direction of easy axis of described thin magnetic film storage unit (2), and vertical mutually with described word line WL1 (3d), WL2 (3g).
18. a kind ofly it is characterized in that according to claim 17 is described with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, described bit line BL (3a) be arranged in the top of described word line WL2 (3g) and with it insulation isolate.
19. described a kind of according to claim 18 with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, it is characterized in that the grid of described word line WL (3d) while as described transistor ATR (4) unit.
20. it is described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 19, it is characterized in that in the process of sense information, described transistor ATR (4) conducting, read current are introduced by described word line WL2 (3g) and are obtained canned data in the described thin magnetic film storage unit (2).
21. it is described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 20, it is characterized in that also comprising transition metal layer (3b), described thin magnetic film storage unit (2) is connected with described transistor ATR (4) unit with described contact hole (3f) via this transition metal layer (3b).
22. described a kind of according to claim 21 with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer, it is characterized in that its write operation process by the electric current that is parallel to described thin magnetic film storage unit (2) on the described bit line BL (3a) with introduce from described word line WL2 (3g), finish perpendicular to the acting in conjunction of the electric current of the thin magnetic film storage unit (2) and the described thin magnetic film storage unit (2) of flowing through.
23. it is described a kind of with the MAGNETIC RANDOM ACCESS MEMORY of carbon nano-tube as barrier layer according to claim 22, it is characterized in that the interior metal wiring layer is total up to three layers, be described bit line BL (3a) place layer, described word line WL2 (3g) place layer, and described ground wire GND (3c) and described transition metal layer (3b) place layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1392618A (en) * | 2001-03-19 | 2003-01-22 | 佳能株式会社 | Magnetic resistance element and magnetic random access storage using said element |
| CN2751412Y (en) * | 2004-09-10 | 2006-01-11 | 中国科学院物理研究所 | A carbon nanotube magnetic RAM |
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| CN1392618A (en) * | 2001-03-19 | 2003-01-22 | 佳能株式会社 | Magnetic resistance element and magnetic random access storage using said element |
| CN2751412Y (en) * | 2004-09-10 | 2006-01-11 | 中国科学院物理研究所 | A carbon nanotube magnetic RAM |
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