CN100379103C - Semiconductor laser device and optical information recording apparatus provided therewith - Google Patents
Semiconductor laser device and optical information recording apparatus provided therewith Download PDFInfo
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- CN100379103C CN100379103C CNB2005101317289A CN200510131728A CN100379103C CN 100379103 C CN100379103 C CN 100379103C CN B2005101317289 A CNB2005101317289 A CN B2005101317289A CN 200510131728 A CN200510131728 A CN 200510131728A CN 100379103 C CN100379103 C CN 100379103C
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Abstract
A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be produced at lower cost by reducing the operating power needed. The semiconductor laser device is provided with a negative electrode, a GaN substrate, a first n-type clad layer, an n-type light shielding layer that shields light, a second n-type clad layer, an n-type optical waveguide layer, a first carrier stop layer, an active layer, a second carrier stop layer, a p-type optical waveguide layer, a p-type clad layer, a p-type contact layer, and a positive electrode laid in this order.
Description
Technical field
The present invention relates to a kind of semiconductor laser device and the optical information recording apparatus that is provided with it, and more specifically, relate to a kind of semiconductor laser device and the optical information recording apparatus that is provided with it that has class Gauss far field pattern (Gaussian-like far-fieldpattem) in vertical direction.
Background technology
For example GaN, InN, AlN and alloy semiconductor thereof (are seen Applied Physics Letters 69, pp.4056-4058), have been made the sample at semiconductor laser device luminous from indigo plant to the ultra-violet (UV) band by using nitride semi-conductor material.This semiconductor laser device has at the last following layer according to described sequential cascade of n type GaN layer (3 μ m): n type In
0.05Ga
0.95N resilient coating, n type Al
0.05Ga
0.95N coating (0.5 μ m), n type GaN light waveguide-layer (0.1 μ m), In
0.2Ga
0.8N/n type In
0.05Ga
0.95N three mqw active layer (In
0.2Ga
0.8N/n type In
0.05Ga
0.95N=40 /80 * 3MQW), p type Al
0.2Ga
0.8N layer (200 ), p type GaN light waveguide-layer (0.1 μ m), p type Al
0.05Ga
0.95N coating (0.5 μ m) and p type GaN contact layer (0.2 μ m).The part active layer from its upper space down to p type Al
0.05Ga
0.95The N coating is etched, to stay the ridged bar with 2 μ m width, then, forms electrode on its top surface.This semiconductor laser device has optical waveguide structure, and in this structure, active layer and light waveguide-layer are clipped between the coating.Be limited in the optical waveguide structure from the light of active layer emission, and sharp penetrating taken place.
Yet above-mentioned conventional semiconductor laser device has following problem.When the present inventor makes above-mentioned semiconductor laser device and check at the far field of vertical direction pattern (FFP), the height that they find so to obtain at the strength ratio Gauss curve fitting curve of FFP base portion.The coupling efficiency that this semiconductor laser device that causes having such FFP is coupled to pickup optical system (pickup optical system) is low, because, when occur from semiconductor device couple light to pickup optical system the time, only used in light intensity to be the light in tens percent or the higher angular range of FFP peak strength, be not used at the light of the lower angle of light intensity.Therefore, semiconductor laser device need work in the work optics output of increase, and making needs to satisfy stricter index, causes lower rate of finished products and more expensive.Therefore, need reduce light intensity at the FFP base portion.In other words, need make the FFP shape more near gaussian-shape.
For the FFP that makes vertical direction more near gaussian-shape, in another example of conventional semiconductor laser device, so-called hierarchy (graded structure) has been proposed, in this structure, refractive index changes from the coating to the active layer continuously.This hierarchy can adopt crystal growth, makes by continuously changing semi-conductive mixed crystal ratio basically.
On the other hand, in another example of conventional semiconductor laser device, proposed a kind of coating or light waveguide-layer by the two-layer of different refractivity or structure that multilayer constitutes, refraction index profile is for more and more higher to active layer.This structure also has FFP shape that the effect identical with above-mentioned hierarchy make in vertical direction more near gaussian-shape.
Yet we have investigated above-mentioned these two kinds of structures and have found, both are effective a little at the FFP that makes vertical direction aspect gaussian-shape, and effect is not remarkable.
As mentioned above, in conventional semiconductor laser device, be different from gaussian-shape greatly in the FFP of vertical direction shape, and low to the coupling efficiency of pickup optical system.The work optics output that this has increased the semiconductor laser device need of work, making needs to satisfy stricter index.This causes low rate of finished products and expensive.
Summary of the invention
An object of the present invention is to provide a kind of semiconductor laser device, its measures of dispersion by the FFP shape that reduces greatly in vertical direction and gaussian-shape provides the higher coupling efficiency of pickup optical system, and can be by reducing required operating power with the low cost manufacturing.Another object of the present invention is to provide a kind of more cheap optical information recording apparatus by this semiconductor laser device.
To achieve these goals, according to an aspect of the present invention, semiconductor laser device have wherein light shielding layer, the first conduction type coating, active layer and the second conduction type coating according to this order from the stacked structure of substrate side.
Semiconductor laser device can have wherein the first conduction type coating, active layer, the second conduction type coating and light shielding layer according to this order from the stacked structure of substrate side.
Above-mentioned two structures can make up make semiconductor laser device have wherein first light shielding layer, the first conduction type coating, active layer, the second conduction type coating and second light shielding layer according to this order from the stacked structure of substrate side.
Adopt these structures, the measures of dispersion between the FFP of vertical direction shape and gaussian shape has significantly reduced.
Preferably, the first conduction type coating and the second conduction type coating comprise Al, and active layer comprises In.
Preferably, between the first conduction type coating and the second conduction type coating difference of Al mixed crystal ratio in 1%.
Preferably, the light refractive index of light shielding layer is than the light refractive index little 0.01 of the first conduction type coating or the second conduction type coating or more.
Preferably, the optical absorption coefficient of light shielding layer is 10000cm
-1Or it is bigger.
Preferably, be different from the first type surface of active layer side first type surface in the face of the first conduction type coating and distance between the active layer side first type surface of the light shielding layer that is provided with and the first conduction type coating and face that the second conduction type coating is different from the first type surface of active layer side first type surface and distance between the active layer side first type surface of the light shielding layer that is provided with and the second conduction type coating is 0.01 μ m or above but at 1.5 μ m or following.
The lower limit that defines above-mentioned distance range becomes excessive to prevent θ ⊥, defines its upper limit and produces the required minimum range of desired effects to keep light shielding layer.
Preferably, the bed thickness of light shielding layer is 0.01 μ m or above but at 3 μ m or following.
When the bed thickness of light shielding layer is 0.01 μ m or when above, light shielding layer can produce desired effects, and when its bed thickness be 3 μ m or when following, its growth is possible.
Preferably, light shielding layer is insulating barrier, metal level or air layer.
Preferably, light shielding layer is by SiO
2, ZrO
2, Al
2O
3, SiN, Al
xGa
1-xN (0＜x≤1), Al
yGa
1-yAs (0＜y≤1) and Al
zGa
1-zOne of P (0＜z≤1) forms.
The light shielding layer that is provided with can be the second conduction type electrode as being different from the first type surface of active layer side first type surface in the face of the second conduction type coating.
Preferably, first charge carrier that contains Al stops layer and is formed between the first conduction type coating and the active layer, and second charge carrier that contains Al stops layer and is formed between the second conduction type coating and the active layer.
Preferably, the part from the first conduction type coating to the second conduction type coating on refraction index profile about active layer mid-plane symmetry.
According to a further aspect in the invention, optical information recording apparatus is provided with above-mentioned semiconductor laser device.
According to the present invention, by suitably forming light shielding layer between the layer, may reduce the FFP shape of vertical direction and the measures of dispersion between the gaussian-shape greatly, therefore be increased to the coupling efficiency of pickup optical system, reduce required operating power, and realize semiconductor laser device with low cost.
In addition, according to the present invention,, may realize more cheap optical information recording apparatus by using above-mentioned semiconductor laser device.
Description of drawings
Fig. 1 is the schematic sectional view that the semiconductor laser device structure is shown;
Fig. 2 is illustrated in the FFP of vertical direction and the schematic diagram that the measures of dispersion between the Gauss changes with structural parameters;
Fig. 3 A is illustrated in the FFP of conventional semiconductor laser device vertical direction and the schematic diagram of Gauss curve fitting curve, and Fig. 3 B is illustrated in the FFP of vertical direction of semiconductor laser device of the present invention and the schematic diagram of Gauss curve fitting curve;
Fig. 4 A shows the result of calculation that optical electric field that obtain by emulation, in fiber waveguide distributes to 4F;
Fig. 5 is the schematic diagram of measured value of FFP that is illustrated in the vertical direction of conventional semiconductor laser device;
Fig. 6 shows when the hypothesis light shielding layer inserts three-decker, photodistributed simulation result;
Fig. 7 is the schematic sectional view that another case structure of semiconductor laser device of the present invention is shown.
Embodiment
Should be appreciated that, in this manual, the semi-conductive layer growth direction of " vertical direction " expression.In this manual, " with the measures of dispersion of gaussian-shape " expression shows that FFP shape is different from the value of the degree of gaussian-shape.Suppose that FFP is expressed as FFP (θ), and be called FIT (θ) by the Gaussian function of percent 40 or above observation data match of the peak strength of FFP (θ).So, the measures of dispersion with gaussian-shape provides by following formula:
(with the measures of dispersion of gaussian-shape)=and ∫ | FFP (θ)-FIT (θ) | d θ }/{ ∫ FFP (θ) d θ }
Herein, the following acquisition of FIT (θ).From comprising at least the one group of data { θ that observes with 0.1 ° of interval in ° scope of-40 °≤θ≤40, FFP (θ) } in, only extract percent 65 or one group of above observation data, to define one group of new data { θ, ln[FFP (θ)] } in FFP (θ) peak strength.Then, approach (least squares approximation) method, the quadratic function y=a θ of definition fitting data group by using least square
2+ b θ+c.By using coefficient a, b and the c of acquisition like this, FIT (θ) is expressed as follows:
FFP(θ)＝exp[y]
Fig. 1 is the schematic sectional view that the structure of semiconductor laser device 100 of the present invention is shown.Fig. 1 shows at the semiconductor laser device 100 perpendicular to the intercepting of resonant cavity direction.
As selection, for example, a n type coating 102 can be by n type Al
0.061GaN forms, and light shielding layer 103 can be formed by n type Al0.2GaN, and the 2nd n type coating 104 can be by n type Al
0.061GaN forms, and n type light waveguide-layer 105 can be formed by n type GaN, and first charge carrier stops layer 106 can be by n type Al
0.3GaN forms, and active layer 107 can form the multiple quantum well active layer of InGaN/InGaN, and second charge carrier stops layer 108 can be by p type Al
0.3GaN forms, and p type light waveguide-layer 109 can be formed by p type GaN, and p type coating 110 can be by p type Al
0.061GaN forms, and p type contact layer 111 can be formed by p type GaN.
Herein, positive electrode (the second conduction type electrode) 112 also serves as p type light shielding layer (the second conduction type light shielding layer).Note, between p type coating (second conduction type coating) 110 and p type contact layer 111, perhaps between p type contact layer 111 and positive electrode 112, can form p type light shielding layer (the second conduction type light shielding layer).
First charge carrier stops layer 106 and second charge carrier and stops layer and 108 comprise Al at least.Second charge carrier stops layer 108 and so forms to prevent that the electronics that is injected into active layer 107 from n type semiconductor layer one side from spilling into p type semiconductor layer one side.Being included in second charge carrier stops the Al of layer in 108 and serves as potential barrier to electronics.Herein first charge carrier stop layer 106 reason that contains Al be make part from the first conduction type coating to the second conduction type coating on refraction index profile about the mid-plane symmetry of active layer, and reduce measures of dispersion with gaussian-shape.
On the other hand, the 2nd n type coating 104 and p type coating 110 contain Al, and active layer 107 contains In.The existence of these elements makes and can form refraction index profile in the bed thickness direction, therefore improves the optical density of active layer 107, and so allows effectively to swash to penetrate generation.
Should be noted that the present invention only needs substrate, n type coating, active layer, p type coating and light shielding layer.For example, p type/n type light waveguide-layer, the first/the second charge carrier stop the layer etc. can omit as required because they are not main points of the present invention.In addition, in the above-described embodiments, adopt the GaN substrate, yet, in practice, also can replace and use for example Sapphire Substrate.In addition, active layer adopts the multi-quantum pit structure of InGaN/InGaN, yet, in practice, can adopt InGaN/GaN multi-quantum pit structure, GaN/AlGaN multi-quantum pit structure or single quantum.
Fig. 2 shows the FFP of the vertical direction that changes with structural parameters and the measures of dispersion between the gaussian-shape.Point A is illustrated in the conventional semiconductor laser device, and in the FFP of vertical direction and the measures of dispersion between the gaussian-shape, and some B is illustrated in the semiconductor laser device 100 of the present invention the FFP of vertical direction and the measures of dispersion between the gaussian-shape.State when solid line represents that the total bed thickness of the light waveguide-layer of conventional semiconductor laser device changes, and the state of dotted line when representing the light waveguide-layer variations in refractive index of conventional semiconductor laser device.As conspicuous from the figure that solid line and dotted line are shown, big more at half maximum full-shape (full angle at halfmaximum) the θ ⊥ of the FFP of vertical direction, more little with the measures of dispersion of gaussian-shape.
In conventional semiconductor laser device, when the refractive index of light waveguide-layer increases, tend to converge on about 0.06 value with the measures of dispersion of gaussian-shape, and rest on this place.On the other hand, θ ⊥ still increases, make be defined as θ ⊥/θ // ellipticity reduce.This has reduced the coupling efficiency to pickup optical system, and is undesirable from the angle of reality therefore.
In addition, in conventional semiconductor laser device, when total bed thickness of light waveguide-layer increases, tend to reduce with the measures of dispersion of gaussian-shape.Yet when total bed thickness of light waveguide-layer increased to such an extent that surpass some A, the some optical confinement factor of active layer was tended to reduce.This has increased the thresholding electric current, i.e. operating current, and be undesirable from the angle of reality therefore.
On the other hand, in semiconductor laser device 100, shown in a B, be reduced to for a short time greatly, and obtained the some optical confinement factor of the active layer that observes at an A to about 0.01 value with the measures of dispersion of gaussian-shape.
Fig. 3 A illustrates the FFP of vertical direction of conventional semiconductor laser device and the schematic diagram of Gauss curve fitting curve.In this figure, represent by solid line at the FFP of conventional semiconductor laser device vertical direction, and the Gauss curve fitting curve is illustrated by the broken lines.Be higher than the Gauss curve fitting curve in the light intensity of the base portion of the FFP of vertical direction.Fig. 3 B illustrates semiconductor laser device 100 at the FFP of vertical direction and the schematic diagram of Gauss curve fitting curve.FFP in semiconductor laser device 100 vertical direction is represented by solid line, and the Gauss curve fitting curve is illustrated by the broken lines.As shown in the figure, reduce with comparing greatly of in conventional semiconductor laser device, observing in the light intensity of the FFP base portion of semiconductor laser device 100 vertical direction.
The effect of light shielding layer of the present invention then, is described with reference to Fig. 4 A-4F.Now, suppose to adopt the layer wherein have given refractive index to be clipped in three-decker between the layer with less refractive index.By emulation, the calculating that optical electric field in the simplest this fiber waveguide distributes provides and is not the gaussian-shape shown in Fig. 4 C but as Fig. 4 base portion that A is shown in shape of swelling.Fig. 4 B be applied to Fig. 4 C function so that Fig. 4 A more near the actual distribution of optical electric field.Carry out Fourier transform and provided the FFP shape shown in Fig. 4 D on the optical electric field that so obtains distributes (Fig. 4 A), this shape is compared with gaussian-shape, swells from the centre to the base portion.This means that the FFP shape in three-decker is different from gaussian-shape.
Fig. 5 shows the measured value of conventional semiconductor laser device at the FFP of vertical direction.Distribution C represents measured value.Distribution D represents Gaussian function, its by use one group of least square approximatioss match and from measured value, select and peak strength percent 65 or more than the point that observes, and, shown in the simulation result of Fig. 4 D, have the shape of comparing protuberance from the centre to the base portion with gaussian-shape.
The existence of light shielding layer of the present invention makes the optical electric field shown in Fig. 4 A distribute near the shape shown in Fig. 4 C.Particularly, in semiconductor laser device, form the feasible intensity that may reduce in light blocked area in the optical electric field distribution of one of p side and n side or the base portion on both.The shape of this feasible FFP that may prevent in vertical direction is swelled from the centre to the base portion, makes the FFP shape near gaussian-shape.
Fig. 6 shows the result who injects light distributed simulation under the hypothesis in the three-decker at light shielding layer.Trunnion axis is represented bed thickness, and the measures of dispersion of vertical axis representative and gaussian-shape.It is 0.01,0.02,0.05,0.09 and 0.23 situation that curve E, F, G, H and I represent refringence between coating and the light shielding layer respectively.
As shown in Figure 6, when the refringence of light shielding layer and coating is 0.01 or when above, reduce with the appearance owing to light shielding layer of the measures of dispersion of gaussian-shape, and refringence is big more, above-mentioned effect is big more.The refractive index of supposing nitride-based semiconductor is 2.55, refringence maximum when light shielding layer is formed by air.Particularly, the difference of refractive index is 1.55 or littler.Preferably, adopt the AlGaN have greater than 0.1 Al mixed crystal ratio, make that the difference of refractive index is 0.05 or bigger.More preferably, adopt to have 0.2 or the AlGaN of above Al mixed crystal ratio, make that refringence is 0.09 or bigger.Further preferably, adopt the Al mixed crystal, make that the difference of refractive index is 0.23 or bigger than the AlGaN that is 1.
In addition, as shown in Figure 6, when the bed thickness of light shielding layer at least 0.01 μ m or when above, effect of the present invention produces, and light shielding layer is thick more, this effect is big more.With the measures of dispersion of gaussian-shape at specific bed thickness near constant value.Particularly, 1.5 μ m or following bed thickness are enough to obtain above-mentioned effect.Yet when the light shielding layer that adopts AlGaN injected the structure of coating, blocked up light shielding layer cracked in crystal easily owing to the different lattice constants of crystal.This influences the reliability of semiconductor laser device unfriendly.Therefore, the preferred 0.1 μ m of bed thickness or above but at 1.0 μ m or following.More preferably, bed thickness is 0.3 μ m or above but at 0.8 μ m or following.
In the present invention, when refractive index ratio the 2nd n type coating 104 little 0.01 of n type light shielding layer 103 or more for a long time, the effect of n type light shielding layer 103 is remarkable.Similarly, when the refractive index ratio p of p type light shielding layer type coating 110 little 0.01 or more for a long time, p type light shielding layer effect is remarkable.Reason is as follows.Making the refringence between conductivity type coating and the light shielding layer is Δ n0, and is x (positive direction sensing light shielding layer) at the coordinate of bed thickness direction.So, light intensity basically with the proportional decay of exp (a Δ n0x) (wherein a is a constant), and when Δ n0 was 0.1, it is remarkable that this decay becomes.The light refractive index of n type light shielding layer 103 be preferably 0.03 or more than, more preferably 0.05 or more than, more preferably, than the 2nd n type coating 104 little 0.1 or more.
Preferably, the distance of the active layer side first type surface of n type light shielding layer 103 and the 2nd n type coating 104 is 0.01 μ m or above but at 1.5 μ m or following.Similarly, the distance of the active layer side first type surface of p type light shielding layer and p type coating 110 is preferably 0.01 μ m or above but at 1.5 μ m or following.The lower limit of above-mentioned distance range so definition preventing that θ ⊥ from becoming too big, and its upper limit so definition produce the required minimum range of expectancy effect to keep light shielding layer.Above-mentioned distance between two-layer is preferably 0.2 μ m or above but at 1.0 μ m or following, and more preferably 0.4 μ m or above but at 0.8 μ m or following.
Preferably, n type light shielding layer 103 and p type light shielding layer thickness be 0.01 μ m or more than, make them can produce expectancy effect, and their preferred thickness are 3 μ m or following, it may be grown.
In addition, n type light shielding layer 103 and p type light shielding layer can be by insulating material SiO for example
2, ZrO
2, Al
2O
3Or SiN, semi-conducting material Al for example
xGa
1-xN (0＜x≤1), Al
yGa
1-yAs (0＜y≤1) or Al
zGa
1-zP (0＜z≤1) or metal material form, and perhaps form for example space of ELOG growth of air layer.
Preferably, the absorption coefficient of light of n type light shielding layer 103 and p type light shielding layer is 10000cm
-1Or more than.Reason is as follows.The absorption coefficient of light that makes light shielding layer is α [cm
-1], and be x (positive direction is the layer growth direction that starts from substrate surface) in the position of bed thickness direction.So, when light left the active layer propagation, light intensity was pressed exp (+α x) exponential damping, and the value of α is big more, and it is remarkable more to decay.Surpass threshold value 10000cm
-1, the decay beginning significantly.This is the preferred 10000cm of the absorption coefficient of light of n type light shielding layer 103 and p type light shielding layer
-1Or above reason.Note the preferred 50000cm of the above-mentioned absorption coefficient of light
-1Or more than, more preferably 100000cm
-1Or more than, and more preferably 500000cm
-1Or more than.
Preferably, the difference of the 2nd n type coating 104 and the Al mixed crystal ratio of p type coating 110 within 1% because, when satisfying this and require, the part refraction index profile from n type coating to p type coating about the active layer mid-plane near symmetry.Herein limiting value be made as 1% reason be refraction index profile can think the symmetry.
In addition, preferably from the vertical distribution of the optical index of n type coating 104 to p type coating 110 about active layer 107 symmetries littler because this makes with measures of dispersion of gaussian-shape.More preferably from light shielding layer 103 to positive electrode the vertical distribution of 112 optical index about active layer 107 symmetries littler because this makes with measures of dispersion of gaussian-shape.
Fig. 7 is the schematic sectional view of structure that another example of semiconductor laser device of the present invention is shown.Semiconductor laser device has on GaN substrate 101 the following layer according to described sequential cascade: the mask layer 114 of insulating material or metal material, n type Al
0.061The n type coating 102 of GaN, the n type light waveguide-layer 105 of n type GaN, n type Al
0.3First charge carrier of GaN stops layer 106, the multiple quantum well active layer 107 of InGaN/InGaN, p type Al
0.3Second charge carrier of GaN stops layer 108, the p type light waveguide-layer 109 of p type GaN, p type Al
0.061The p type coating 110 of GaN, the p type contact layer 111 of p type GaN, p type contact electrode 115 and positive electrode 112.P type coating 110 and p type contact layer 111 be etched to p type coating 110 by p type coating 110 half to stay bar shaped spine.The insulating barrier 116 that is used for electric current restriction in spine is formed on the whole surface of etching region basically.On the other hand, on the apparent surface of formation the one n type coating 102 of GaN substrate 101, form negative electrode 113.On the top of mask layer 114, form space (void) 117.
In this device, space 117 forms air layer, to be used as the light blocked area.Under some crystal growth conditions, may almost there be space 117 to produce.In this case, mask layer 114 is as the light blocked area.By insulating material SiO for example
2, ZrO
2, Al
2O
3Or the mask layer 114 that SiF forms is as the light blocked area, because the refringence between mask layer and the nitride semiconductor layer is 0.1 or bigger.By metal for example the mask layer that forms of Ti, Ni, Pd, W or Al 114 as the light blocked area, because it is by having 10000cm
-1Or the material of above absorption coefficient forms.
Preferably, light blocked area and the distance of n type coating 102 between the surface of active layer 107 1 sides are 0.01 μ m or above but at 1.5 μ m or following.The lower limit of above-mentioned distance range so definition preventing that θ ⊥ from becoming too big, and its upper limit so definition produce the required minimum range of expectancy effect to keep the light blocked area.Above-mentioned distance is preferably 0.2 μ m or above but at 1.0 μ m or following, and more preferably 0.4 μ m or above but at 0.8 μ m or following.
Preferably, light blocked area thickness be 0.01 μ m or more than, make to produce expectancy effect, and preferred 3 μ m or following making may be grown.
In addition, preferably the vertical distribution from n type light blocked area to the refractive index of positive electrode 112 is about active layer 107 symmetries, because this feasible measures of dispersion with gaussian-shape is littler.
Semiconductor laser device of the present invention can be used in the optical information recording apparatus, and information that provides with electrical signal form is provided in optical recording media for it.Optical information recording apparatus is provided with: the recording light launch control unit, and it makes semiconductor laser device launch recording laser according to the signal of telecommunication; The light focusing arrangement, it focuses on from the semiconductor laser device emitted laser; With the irradiation position control device, it adopts and is focused precalculated position and the recorded information of laser radiation in optical recording media that device focuses on.
Semiconductor laser device of the present invention can be used in the optical information recording apparatus, and this equipment is at optical recording media for example CD or the enterprising line item of DVD.
Claims (28)
1. semiconductor laser device comprises:
Light shielding layer;
The first conduction type coating;
Active layer; With
The second conduction type coating,
It is stacked from substrate side in this order,
Wherein the optical index of light shielding layer is than the optical index little 0.01 of the described first conduction type coating or more.
2. semiconductor laser device comprises:
Light shielding layer;
The first conduction type coating;
Active layer; With
The second conduction type coating,
It is stacked from substrate side in this order,
Wherein the absorption coefficient of light of light shielding layer is 10000cm
-1Or it is bigger.
3. semiconductor laser device comprises:
Light shielding layer;
The first conduction type coating;
Active layer; With
The second conduction type coating,
It is stacked from substrate side in this order,
Wherein light shielding layer is an insulating barrier.
4. semiconductor laser device comprises:
Light shielding layer;
The first conduction type coating;
Active layer; With
The second conduction type coating,
It is stacked from substrate side in this order,
Wherein light shielding layer is by SiO
2, ZrO
2, Al
2O
3, SiN, Al
xGa
1-xN (0＜x≤1), Al
yGa
1-yAs (0＜y≤1) and Al
zGa
1-zOne of P (0＜z≤1) forms.
5. semiconductor laser device comprises:
Light shielding layer;
The first conduction type coating;
Active layer; With
The second conduction type coating,
It is stacked from substrate side in this order,
Wherein light shielding layer is a metal level.
6. semiconductor laser device comprises:
Light shielding layer;
The first conduction type coating;
Active layer; With
The second conduction type coating,
It is stacked from substrate side in this order,
Wherein light shielding layer is an air layer.
7. semiconductor laser device comprises:
The first conduction type coating;
Active layer;
The second conduction type coating; With
Light shielding layer,
It is stacked from substrate side in this order,
Wherein the optical index of light shielding layer is than the optical index little 0.01 of the described second conduction type coating or more.
8. semiconductor laser device comprises:
The first conduction type coating;
Active layer;
The second conduction type coating; With
Light shielding layer,
It is stacked from substrate side in this order,
Wherein the absorption coefficient of light of light shielding layer is 10000cm
-1Or it is bigger.
9. semiconductor laser device comprises:
The first conduction type coating;
Active layer;
The second conduction type coating; With
Light shielding layer,
It is stacked from substrate side in this order,
Wherein light shielding layer is an insulating barrier.
10. semiconductor laser device comprises:
The first conduction type coating;
Active layer;
The second conduction type coating; With
Light shielding layer,
It is stacked from substrate side in this order,
Wherein light shielding layer is by SiO
2, ZrO
2, Al
2O
3, SiN, Al
xGa
1-xN (0＜x≤1), Al
yGa
1-yAs (0＜y≤1) and Al
zGa
1-zOne of P (0＜z≤1) forms.
11. a semiconductor laser device comprises:
The first conduction type coating;
Active layer;
The second conduction type coating; With
Light shielding layer,
It is stacked from substrate side in this order,
Wherein light shielding layer is a metal level.
12. a semiconductor laser device comprises:
The first conduction type coating;
Active layer;
The second conduction type coating; With
Light shielding layer,
It is stacked from substrate side in this order,
Wherein light shielding layer is an air layer.
13. a semiconductor laser device comprises:
The first conduction type coating;
Active layer;
The second conduction type coating; With
Light shielding layer,
It is stacked from substrate side in this order,
Wherein light shielding layer is the second conduction type electrode.
14. a semiconductor laser device comprises:
First light shielding layer;
The first conduction type coating;
Active layer;
The second conduction type coating; With
Second light shielding layer,
It is stacked from substrate side in this order,
Wherein the optical index of first light shielding layer is than the optical index little 0.01 of the described first conduction type coating or more, and
Wherein the optical index of second light shielding layer is than the optical index little 0.01 of the described second conduction type coating or more.
15. a semiconductor laser device comprises:
First light shielding layer;
The first conduction type coating;
Active layer;
The second conduction type coating; With
Second light shielding layer,
It is stacked from substrate side in this order,
Wherein the absorption coefficient of light of first and second light shielding layers is 10000cm
-1Or it is bigger.
16. a semiconductor laser device comprises:
First light shielding layer;
The first conduction type coating;
Active layer;
The second conduction type coating; With
Second light shielding layer,
It is stacked from substrate side in this order,
Wherein first and second light shielding layers are insulating barriers.
17. a semiconductor laser device comprises:
First light shielding layer;
The first conduction type coating;
Active layer;
The second conduction type coating; With
Second light shielding layer,
It is stacked from substrate side in this order,
Wherein first and second light shielding layers are by SiO
2, ZrO
2, Al
2O
3, SiN, Al
xGa
1-xN (0＜x≤1), Al
yGa
1-yAs (0＜y≤1) and Al
zGa
1-zOne of P (0＜z≤1) forms.
18. a semiconductor laser device comprises:
First light shielding layer;
The first conduction type coating;
Active layer;
The second conduction type coating; With
Second light shielding layer,
It is stacked from substrate side in this order,
Wherein first and second light shielding layers are metal levels.
19. a semiconductor laser device comprises:
First light shielding layer;
The first conduction type coating;
Active layer;
The second conduction type coating; With
Second light shielding layer,
It is stacked from substrate side in this order,
Wherein first and second light shielding layers are air layers.
20. the described semiconductor laser device of one of claim 1 to 19,
The wherein said first conduction type coating and the second conduction type coating comprise Al, and described active layer comprises In.
21. semiconductor laser device as claimed in claim 20,
The difference that aluminium mixed crystal between wherein said first conduction type coating and the described second conduction type coating compares is within 1%.
22. as one of claim 1 to 6 and 14 to 19 described semiconductor laser device,
Wherein be different from the first type surface of active layer side first type surface and distance between the described active layer side first type surface of the light shielding layer that is provided with and the described first conduction type coating is 0.01 μ m or above but at 1.5 μ m or following in the face of the described first conduction type coating.
23. as the described semiconductor laser device of one of claim 7 to 19,
Wherein be different from the first type surface of active layer side first type surface and distance between the described active layer side first type surface of the light shielding layer that is provided with and the described second conduction type coating is 0.01 μ m or above but at 1.5 μ m or following in the face of the described second conduction type coating.
24. as one of claim 1 to 6 and 14 to 19 described semiconductor laser device,
Wherein be different from the first type surface of active layer side first type surface and the bed thickness of the light shielding layer that is provided with is 0.01 μ m or above but at 3 μ m or following in the face of the described first conduction type coating.
25. as the described semiconductor laser device of one of claim 7 to 19,
Wherein be different from the first type surface of active layer side first type surface and the bed thickness of the light shielding layer that is provided with is 0.01 μ m or above but at 3 μ m or following in the face of the described second conduction type coating.
26. as the described semiconductor laser device of one of claim 1 to 19,
Wherein between described first conduction type coating and described active layer, form first charge carrier contain Al and stop layer, and between described second conduction type coating and described active layer, form second charge carrier that contains Al and stop layer.
27. as the described semiconductor laser device of one of claim 1 to 19,
Wherein the part from the described first conduction type coating to the described second conduction type coating on refraction index profile about the mid-plane symmetry of described active layer.
28. an optical information recording apparatus comprises as the described semiconductor laser device of one of claim 1 to 19.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP365431/04 | 2004-12-17 | ||
| JP2004365431 | 2004-12-17 | ||
| JP286889/05 | 2005-09-30 |
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| CN1790844A CN1790844A (en) | 2006-06-21 |
| CN100379103C true CN100379103C (en) | 2008-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101317289A Expired - Fee Related CN100379103C (en) | 2004-12-17 | 2005-12-16 | Semiconductor laser device and optical information recording apparatus provided therewith |
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|---|---|---|---|---|
| JPWO2018096850A1 (en) * | 2016-11-24 | 2019-10-17 | ソニー株式会社 | Surface emitting laser and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000294883A (en) * | 1999-04-05 | 2000-10-20 | Nec Corp | Nitride compound semiconductor laser element |
| US20030169794A1 (en) * | 2002-03-08 | 2003-09-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor laser |
| JP2004014818A (en) * | 2002-06-07 | 2004-01-15 | Fuji Photo Film Co Ltd | Semiconductor laser device |
| CN1513222A (en) * | 2001-05-31 | 2004-07-14 | ���ǻ�ѧ��ҵ��ʽ���� | Semiconductor element |
-
2005
- 2005-12-16 CN CNB2005101317289A patent/CN100379103C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000294883A (en) * | 1999-04-05 | 2000-10-20 | Nec Corp | Nitride compound semiconductor laser element |
| CN1513222A (en) * | 2001-05-31 | 2004-07-14 | ���ǻ�ѧ��ҵ��ʽ���� | Semiconductor element |
| US20030169794A1 (en) * | 2002-03-08 | 2003-09-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor laser |
| JP2004014818A (en) * | 2002-06-07 | 2004-01-15 | Fuji Photo Film Co Ltd | Semiconductor laser device |
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