CN100377318C - Etching technology for reducing plasma damage - Google Patents
Etching technology for reducing plasma damage Download PDFInfo
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- CN100377318C CN100377318C CNB2005101262873A CN200510126287A CN100377318C CN 100377318 C CN100377318 C CN 100377318C CN B2005101262873 A CNB2005101262873 A CN B2005101262873A CN 200510126287 A CN200510126287 A CN 200510126287A CN 100377318 C CN100377318 C CN 100377318C
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- plasma damage
- nonreactive gas
- etching technics
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Abstract
The present invention provides an etching technology for reducing plasma damage, which adds a nonreactive gas plasma process between a main etching step 1 and a main etching step 2. The etching technology of the present invention can release cumulative charges and effectively reduces the plasma damage.
Description
Technical field
The present invention relates to polycrystalline silicon etching process, relate to a kind of etching technics that reduces plasma damage particularly.
Background technology
In the 300mm semiconductor technology, conventional etching technics is as shown in the table:
| Etching technics | |||||||||
| Step BT main etching 1 main etching 2 | Last RF power (W) 250-400 300-600 300-600 | Following RF power (W) 20-80 20-160 20-160 | Chamber pressure (mT) 7-15 7-50 7-50 | C xH yF z (seem) 0-100 0-100 0-100 | Cl 2 (seem) 0-100 0-200 0-200 | HBr (seem) 0-300 100-500 | He (seem) 0-500 | HeO 2 (seem) 0-50 0-50 | Times 5 IEP OES |
| OE | 200-500 | 40-200 | 40-100 | 0-200 | 100-500 | 0-500 | 0-50 | 60 | |
Annotate: the RF-radio frequency, BT-nature silicon dioxide is opened the OE-over etching
Wherein, C
xH
yF
z: x=1, y=0,1, z=2x+2-y; Or x=2, y=0, z=2x+2; Or x=4, y=0,1, z=2x.
When using the bigger lines etching of depth-width ratio, the accumulation of electric charge causes plasma damage easily, as producing micro-channel phenomenon.
Summary of the invention
(1) technical problem that will solve
The purpose of this invention is to provide a kind of etching technics that reduces plasma damage.
(2) technical scheme
The etching technics that reduces plasma damage of the present invention, it increases the plasma process of nonreactive gas between main etching 1 and main etching 2 steps.Nonreactive gas is selected from Ar, N
2, a kind of among the He.
Etching technics of the present invention, the technological parameter of its nonreactive gas plasma process is set to: going up RF power is 10-800W for RF power, and following RF power is 0-200W, and chamber pressure is 7-100mT, the nonreactive gas flow is 5-500sccm, and the processing time is 2-100s.
Preferably, the technological parameter of nonreactive gas plasma process is set to: going up RF power is 100-500W, and following RF power is 0-100W, and chamber pressure is 20-80mT, and the nonreactive gas flow is 100-400sccm, and the processing time is 5-10s.
More preferably, the technological parameter of nonreactive gas plasma process is set to: going up radio-frequency power is 200W, and chamber pressure is 60mT, and the nonreactive gas flow is 200sccm, and the processing time is 10s.
(3) beneficial effect
Etching technics of the present invention can discharge the electric charge of accumulation, effectively reduces plasma damage.
Description of drawings
Fig. 1 has caused plasma damage when using the bigger lines etching of depth-width ratio;
Fig. 2 uses etching technics of the present invention effectively to reduce plasma damage.
Embodiment
Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
Embodiment 1 reduces the etching technics of plasma damage
And the difference of conventional etching technics is: it increases the Ar plasma process between main etching 1 and main etching 2 steps, and this process is carried out in the commercial etching machine of northern microelectronics.Concrete technological parameter is: going up RF power is 800W, and following RF power is 200W, and chamber pressure is 100mT, and the Ar flow is 500sccm, and the processing time is 100s.
Adopt this technology effectively to reduce plasma damage.
Embodiment 2 reduces the etching technics of plasma damage
And the difference of conventional etching technics is: it increases N between main etching 1 and main etching 2 steps
2Plasma process, this process is carried out in the commercial etching machine of northern microelectronics.Concrete technological parameter is: going up RF power is 10W, and following RF power is 200W, and chamber pressure is 7mT, N
2Flow is 5sccm, and the processing time is 2s.
Adopt this technology effectively to reduce plasma damage.
Embodiment 3 reduces the etching technics of plasma damage
And the difference of conventional etching technics is: it increases the He plasma process between main etching 1 and main etching 2 steps, and this process is carried out in the commercial etching machine of northern microelectronics.Concrete technological parameter is: going up radio-frequency power is 200W, and chamber pressure is 60mT, and the He flow is 200sccm, and the processing time is 10s.
Adopt this technology effectively to reduce plasma damage.
Embodiment 4 reduces the etching technics of plasma damage
And the difference of conventional etching technics is: it increases N between main etching 1 and main etching 2 steps
2Plasma process, this process is carried out in the commercial etching machine of northern microelectronics.Concrete technological parameter is: going up radio-frequency power is 500W, and chamber pressure is 80mT, N
2Flow is 100sccm, and the processing time is 5s.
Adopt this technology effectively to reduce plasma damage.
Embodiment 5 reduces the etching technics of plasma damage
And the difference of conventional etching technics is: it increases the He plasma process between main etching 1 and main etching 2 steps, and this process is carried out in the commercial etching machine of northern microelectronics.Concrete technological parameter is: going up radio-frequency power is 100W, and following radio-frequency power is 100W, and chamber pressure is 20mT, and the He flow is 400sccm, and the processing time is 8s.
Adopt this technology effectively to reduce plasma damage.
Claims (3)
1. etching technics that reduces plasma damage, it is characterized in that between main etching 1 and main etching 2 steps, increasing the plasma process of nonreactive gas, the technological parameter of described nonreactive gas plasma process is set to: going up radio-frequency power is 100-500W, following radio-frequency power is 0-100W, chamber pressure is 20-80mT, the nonreactive gas flow is 100-400sccm, and the processing time is 5-10s.
2. etching technics as claimed in claim 1 is characterized in that nonreactive gas is selected from Ar, N
2, a kind of among the He.
3. etching technics as claimed in claim 1 or 2 is characterized in that the technological parameter of nonreactive gas plasma process is set to: going up radio-frequency power is 200W, and chamber pressure is 60mT, and the nonreactive gas flow is 200sccm, and the processing time is 10s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101262873A CN100377318C (en) | 2005-12-02 | 2005-12-02 | Etching technology for reducing plasma damage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101262873A CN100377318C (en) | 2005-12-02 | 2005-12-02 | Etching technology for reducing plasma damage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1851878A CN1851878A (en) | 2006-10-25 |
| CN100377318C true CN100377318C (en) | 2008-03-26 |
Family
ID=37133352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101262873A Active CN100377318C (en) | 2005-12-02 | 2005-12-02 | Etching technology for reducing plasma damage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100377318C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273093A (en) * | 1994-04-01 | 1995-10-20 | Sony Corp | Plasma etching method |
| CN1700426A (en) * | 2004-05-21 | 2005-11-23 | 中国科学院微电子研究所 | Method for etching 15-50 nanowire wide polycrystalline silicon gate |
-
2005
- 2005-12-02 CN CNB2005101262873A patent/CN100377318C/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273093A (en) * | 1994-04-01 | 1995-10-20 | Sony Corp | Plasma etching method |
| CN1700426A (en) * | 2004-05-21 | 2005-11-23 | 中国科学院微电子研究所 | Method for etching 15-50 nanowire wide polycrystalline silicon gate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1851878A (en) | 2006-10-25 |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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