CN100376904C - CWDM light filter - Google Patents
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- CN100376904C CN100376904C CNB200410071703XA CN200410071703A CN100376904C CN 100376904 C CN100376904 C CN 100376904C CN B200410071703X A CNB200410071703X A CN B200410071703XA CN 200410071703 A CN200410071703 A CN 200410071703A CN 100376904 C CN100376904 C CN 100376904C
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Abstract
The present invention relates to a CWDM optical filter which comprises a first part and a second part, wherein the first part comprises at least two Fabry-Perot resonant cavity structures; the second part comprises a film layer structure with a non-quarter wavelength; the film layer structure is formed by that a plurality of film layers of high and low refractivity are alternately and repeatedly overlapped on the first part; the Fabry-Perot resonant cavity structures of the first part use a usual structure; the film thickness of the non-quarter wavelength is in a range which uses 1470 nm as the center wavelength randomly generated by a computer according to a given wavelength range in advance.
Description
Technical field
The present invention is about a kind of optical filter, especially a kind of coarse wavelength division multiplexing systems (CWDM that is applicable to; Coarse wavelength division multiplex) CWDM optical filter.
Background technology
Optical filter claims that perhaps light filter (optical filter) is a kind of wavelength selector spare, in optical fiber telecommunications system and light sensor system important application is arranged.Optical filter is divided into passive and active two major types, and the basis of passive light wave filter is prism, diffraction grating and spectrum (frequency) wave filter; And active optical filter is the combination of passive device and tunable wave detector, each wave detector be tuned to a specific frequency.
A kind of interference membranous type light filter is arranged in the passive light wave filter, and its material that adopts high and low refractive index is deposited on the thickness (being generally λ/4) of design in advance on the substrate that material such as glass makes, to meet the requirements of the wavelength response characteristic.Usually, the deielectric-coating interference light filter is that the high index of refraction of λ/4 and the film overlapping of low-refraction are made by every layer thickness, and the phase place of the light of high refractive index layer internal reflection can not be offset, and the phase place of the light of low-index layer internal reflection then can be offset 180 °.Because the difference (multiples of 2* λ/4) of light stroke, reflection ray one by one is overlapping in front compound, produces the high strength folded light beam in the narrow range of wavelengths, and the output wavelength beyond this wavelength coverage then can reduce suddenly.This class light filter can be used as high-pass filters, optical low-pass filter or high reflection layer.And, because its optical characteristics depends on reflection, the transmissison characteristic of blooming, its blooming generally is coated with into bandpass filter (band-passfilter), short-pass or long wave pass filter (low pass filter or high passfilter) or band ends optical filter (band reject filter).
China utility model patent ZL98223744.8 provide four a kind of 4.65 microns half-wave narrow band pass filters, and it is substrate with the alundum (Al, and zinc selenide and lead telluride are film material, adopts the vacuum coating method manufacturing.Senior inferior, the most wave structure of wall is adopted in the design of film system; Cut-off region TMAX＜0.3%.But it is applicable to micro CO gas analysis fields such as chemical industry, environmental protection, iron and steel, colliery and medical science.
Utilize advanced coating technique the multilayer dielectric film interference light filter can be made super arrowband type bandpass filter, can be made into dense wavelength division multiplexing device (DWDM thus, densewavelength division multiplexing), its multipling channel interval (channelspace) is less than 1nm.
Chinese patent application CN01139082.4 discloses a kind of super narrow bandpass optical film filter, be included in the optical glass substrate, the bottom film repeatedly formed by the randomness rete alternative stacked of the randomness rete of low-refraction and high index of refraction of vacuum evaporation successively, intermediate layer film of repeatedly forming by the randomness rete alternative stacked of the randomness rete of high index of refraction and middle refractive index and the top film of repeatedly forming by the randomness rete alternative stacked of the randomness rete of high index of refraction and middle refractive index.Its randomness rete is to be produced by the method for random fluctuation.
U.S. Pat P6,404,521 have disclosed a kind of filter system that is used to adjust the dwdm system light transmission, and it adopts the optical fiber tree structure on N+1 rank, when it combines with a multilayer film light filter, can realize the light isolation features.This multilayer film light filter can adopt Fabry-Perot etalon (FPE; Fabry-Perot Etalon).
For Metropolitan Area Network (MAN), system is less demanding to the transmission attenuation of single-mode fiber, does not also need to use fiber amplifier.Can use the wide window of 1200-1700nm like this, with adjacent wavelength interval be loosened to 10 or 20nm can constitute the wavelength-division multiplex system on tens of roads equally, this is Coarse Wavelength Division Multiplexing (CWDM, a coarse wavelength division multiplex) system.Spacing between the different wave length that transmits in same optical fiber is to distinguish the major parameter of DWDM and CWDM.The wavelength spacing of dwdm system is generally 200GHz (1.6nm), 100GHz (0.8nm) or 50GHz (0.4nm), may have narrower spacing in the system in the future.But, the CWDM technology has then made full use of the short characteristics of Metropolitan Area Network (MAN) transmission range, needn't be subjected to EDFA (Erbiumdoped fiber amplifier) to amplify the restriction of wave band, but can be on the whole optical fiber transmission window of 1310-1560nm, with much wideer that wavelength-division multiplex is carried out in wavelength interval than dwdm system.
Aspect multiplexer (multiplexer) and demodulation multiplexer (demultiplexer), the cost difference of DWDM and CWDM mainly is because the number of plies that the wave filter of CWDM comprises is few, so the cost of CWDM wave filter is lower than the cost of DWDM wave filter.General nearly 300 layers of the 0.8nm wave filter that uses in the dwdm system, and nearly 150 layers of the 20nm wave filter of CWDM system.The cost of CWDM wave filter lacks 50% than the cost of DWDM wave filter.In the CWDM system, the interval of adjacent wavelength-channels can be loosened to 20nm, therefore can use cheap multiplexer, demodulation multiplexer etc., thereby is minimized the cost of CWDM system.
At present, the wavelength division multiplexer that uses in the dwdm system of 0.8 channel spacing of widely using adopts the multilayer films interference light filter exactly.Comparatively desirable inteferometer coating light filter is the non-equal thickness interference bandpass filter of λ/4 multilayer films, and its design philosophy is that the multilayer film of λ/4 constitutes by inserting matching layer (coupl inglayer) in the middle of the assembly of thin films (cavity) of two high reflections.The synthetic film of multilayer film stack of two high reflections is that the overlay region exists a reflection minimal value, and the effect of inserting matching layer is a cancellation reflection minimal value, promptly reaches zone of reflections broadening.The thickness that multilayer film is low by the 2n+1 layer, high index of refraction overlaps mutually of its high reflection is that the thickness of 1/4th centre wavelengths constitutes.
General optical communication CWDM optical filter mostly adopts the identical assembly of thin films of several structures of quarter-wave storehouse to form, but in its 1260nm-1640nm wave band except the affiliated signal of this optical filter other wavelength coverage can produce light leak or noise.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art, a kind of coarse wavelength division multiplexing systems (CWDM that is applicable to is provided; Coarse wavelength division multiplex) CWDM optical filter.
Technical essential of the present invention is: a kind of CWDM optical filter is provided, comprises first and second portion, first comprises at least two Fabry-Perot cavity structures; Wherein, second portion is included in non-1/4th film layer structures that repeat alternately to pile up with the high and low refractive index rete several layers in the first.
Non-quarter-wave thickness is according to wavelength coverage given in advance, is that centre wavelength produces by computer random with 1470nm.
At least two Fabry-Perot cavity structures of first are followed this rule: (LH)
36L (HL)
3H (LH)
32L (HL)
3H (LH)
46L (HL)
4H (LH)
34L (HL)
3H (LH)
46L (HL)
4H (LH)
34L (HL)
3H (LH)
46L (HL)
4H (LH)
32L (HL)
3H (LH)
36L (HL)
2H/N
sWherein, N
sThe expression substrate, L represents λ
0/ 4 low-index film; H represents λ
0/ 4 high refractive index layer, λ
0Expression centre wavelength.
Central wavelength lambda of the present invention
0Can be 1470nm or 1490nm; Peak transmittance is greater than 90%; And its cutoff wavelength is: shortwave 1230nm-1457nm, long wave 1483nm-1830nm.
The surface finish diameter of substrate is 90mm, the thick 10mm of being, can comprise elements such as monox, barium, lithium, sodium.
Link with linking layer (coupling layer) between adjacent two Fabry-Perot cavity structures of first.Each Fabry-Perot cavity structure is made up of the multiple film layer structure (stack) of two odd numbers or even level.The matching layer of each Fabry-Perot cavity structure (spacer layer) adopts the thickness of the quarter-wave low-refraction of even-multiple.
General optical communication CWDM optical filter mostly adopts quarter-wave to pile up the identical assembly of thin films of several structures and forms, but in its 1260nm-1640nm wave band except the affiliated signal of this optical filter other wavelength coverage can produce light leak or noise.The present invention eliminates the CWDM optical filter of noise on the basis of adopting the identical resonator cavity (cavity) of several structures of quarter-wave storehouse, continue to pile up the different quarter-wave rete of several structures, make it can eliminate this light leak or noise phenomenon, thereby can in the wavelength band of optical communication, be more widely used.
Description of drawings
Fig. 1 is the film layer structure synoptic diagram of first in the preferred embodiment of the present invention;
Fig. 2 is the film layer structure synoptic diagram of second portion in the preferred embodiment of the present invention;
Fig. 3 is the film layer structure overall schematic of CWDM optical filter of the present invention;
Fig. 4 is the spectrum character diagram of the first of CWDM optical filter of the present invention; And
Fig. 5 is the spectrum character diagram of CWDM optical filter of the present invention.
Embodiment
Now, CWDM of the present invention (coarse wavelengthdivision multiplex) optical filter is described in further detail in conjunction with Figure of description.
Shown in Fig. 1,2 and 3, the present invention comprises first and second portion about a kind of CWDM optical filter 1.Wherein, first comprises at least two Fabry-Perot cavities (Fabry-Perot cavity) structure; Second portion is included in and repeats in the first alternately to pile up several layers of non-quarter-wave film layer structure with the high and low refractive index rete.
The number of plies of the high and low refractive index rete that alternately piles up in the second portion can be 28 layers, 40 layers, 50 layers or 60 layers, or the like.The concrete number of plies can determine that the present invention is preferable enforcement rete number with 40 layers according to specific requirement and applied environment.
At least two Fabry-Perot cavity structures of first are followed following rule: (LH)
36L (HL)
3H (LH)
32L (HL)
3H (LH)
46L (HL)
4H (LH)
34L (HL)
3H (LH)
46L (HL)
4H (LH)
34L (HL)
3H (LH)
46L (HL)
4H (LH)
32L (HL)
3H (LH)
36L (HL)
2H/N
sWherein, N
sThe expression substrate, L represents λ
0/ 4 low-index film; H represents λ
0/ 4 high refractive index layer, λ
0Expression centre wavelength.
In eight channels that optical communication is used always (1470nm, 1490nm, 1510nm, 1530nm, 1550nm, 1570nm, 1590nm, 1610nm), the present invention mainly is at this channel of 1470nm, the design concept of other channel all is to extend according to this channel, and for example centre wavelength is displaced to also applicable the present invention of words of 1490nm.Therefore, central wavelength lambda 0 of the present invention can be 1470nm or 1490nm.
The peak transmittance of CWDM optical filter 1 of the present invention is greater than 90%; And its cutoff wavelength is: shortwave 1230nm-1457nm, long wave 1483nm-1830nm.Substrate 10 surface finish diameters are 90mm, the thick 10mm of being, can comprise elements such as monox, barium, lithium, sodium.The material of low-index film can adopt silicon oxide film, and the material of high refractive index layer can be an oxide film.Each 1/4th rete (low-index film, high refractive index layer etc.) and the material of substrate 10 of CWDM optical filter 1 of the present invention can be determined according to specific requirement or condition.
Link with linking layer (coupling layer) between adjacent two Fabry-Perot cavity structures of first.Each Fabry-Perot cavity structure is made up of the multiple film layer structure (stack) of two odd numbers or even level.The matching layer of each Fabry-Perot cavity structure (spacer layer) 15 adopts the thickness of the quarter-wave low-refraction of even-multiple.
As shown in Figure 1, pile up the quarter-wave film of high index of refraction above the substrate 10 of CWDM optical filter 1 of the present invention earlier after, pile up the quarter-wave film of low-refraction again, afterwards 136 layers of sequence stacks to the according to this again.Wherein, the 6th layer is piled up 6 times with quarter-wave, the 20th layer is piled up 2 times with quarter-wave, the 36th layer is piled up 6 times with quarter-wave, the 52nd layer is piled up 4 times with quarter-wave, the 68th layer is piled up 6 times with quarter-wave, the 84th layer is piled up 4 times with quarter-wave, the 100th layer is piled up 6 times with quarter-wave, the 116th layer is piled up 2 times with quarter-wave, the 130th layer is piled up 6 times with quarter-wave ... more than to eliminate CWDM optical filter 1 usefulness of noise high for the present invention, low-index film is with the design of quarter-wave membrane stack phase one, and its spectrum character diagram has noise at the wave band of 1260nm-1288nm as shown in Figure 4.If will eliminate this noise, then must add the film stack design of subordinate phase.
Go out with non-quarter-wave membrane stack again on last one deck that is designed to design of subordinate phase in the phase one, be exactly in that non-quarter-wave rete obtains second portion of the present invention till the 165th layer with the high and low refractive index material stacks again on the 136th layer.
As illustrated in fig. 1 and 2, the film layer structure of a preferred embodiment of the present invention also can be described as a whole:
First: be located on the glass substrate 10 for the 1st layer, be high refractive index layer, thickness is a quarter-wave; The 2nd layer is low-index film, is stacked on the 1st floor height refractivity film layer, and thickness is a quarter-wave; The 6th layer is low-index film, is stacked on the 5th tunic layer, and thickness is 6 times a quarter-wave; The 20th layer is low-index film, is stacked on the 19th tunic layer, and thickness is 2 times a quarter-wave; The 36th layer is low-index film, is stacked on the 36th tunic layer, and thickness is 6 times a quarter-wave; The 52nd layer is low-index film, is stacked on the 51st tunic layer, and thickness is 4 times a quarter-wave; The 68th layer is low-index film, is stacked on the 67th tunic layer, and thickness is 6 times a quarter-wave; The 84th layer is low-index film, is stacked on the 83rd tunic layer, and thickness is 4 times a quarter-wave; The 100th layer is low-index film, is stacked on the 99th tunic layer, and thickness is 6 times a quarter-wave; The 116th layer is low-index film, is stacked on the 115th tunic layer, and thickness is 2 times a quarter-wave; The 130th layer is low-index film, is stacked on the 129th tunic layer, and thickness is 6 times a quarter-wave; The 136th layer is low-index film, is stacked on the 135th tunic layer, and thickness is a quarter-wave.
Second portion: the 137th layer is high refractive index layer, is stacked on the 136th tunic layer, and thickness is 0.6147 times a quarter-wave; The 138th layer is low-index film, is stacked on the 137th layer, and thickness is 0.9150 times a quarter-wave; The 139th layer is high refractive index layer, is stacked on the 138th layer, and thickness is 0.8560 times a quarter-wave; The 140th layer is low-index film, is stacked on the 139th tunic layer, and thickness is 0.8383 times a quarter-wave; The 141st layer is high refractive index layer, is stacked on the 140th tunic layer, and thickness is 0.7836 times a quarter-wave; The 142nd layer is low-index film, is stacked on the 141st tunic layer, and thickness is 0.8146 times a quarter-wave; The 143rd layer is high refractive index layer, is stacked on the 142nd tunic layer, and thickness is 0.7698 times a quarter-wave; The 144th layer is low-index film, is stacked on the 143rd tunic layer, and thickness is 0.7993 times a quarter-wave; The 145th layer is high refractive index layer, is stacked on the 144th tunic layer, and thickness is 0.8286 times a quarter-wave; The 146th layer is low-index film, is stacked on the 145th tunic layer, and thickness is 0.9172 times a quarter-wave; The 147th layer is high refractive index layer, is stacked on the 146th tunic layer, and thickness is 0.8540 times a quarter-wave; The 148th layer is low-index film, is stacked on the 147th tunic layer, and thickness is 1.1421 times a quarter-wave; The 149th layer is high refractive index layer, is stacked on the 148th tunic layer, and thickness is 0.8356 times a quarter-wave; The 150th layer is low-index film, is stacked on the 149th tunic layer, and thickness is 0.8967 times a quarter-wave; The 151st layer is high refractive index layer, is stacked on the 150th tunic layer, and thickness is 0.8087 times a quarter-wave; The 152nd layer is low-index film, is stacked on the 151st tunic layer, and thickness is 0.8479 times a quarter-wave; The 153rd layer is high refractive index layer, is stacked on the 152nd tunic layer, and thickness is 0.8031 times a quarter-wave; The 154th layer is low-index film, is stacked on the 153rd tunic layer, and thickness is 0.8515 times a quarter-wave; The 155th layer is high refractive index layer, is stacked on the 154th tunic layer, and thickness is 0.8362 times a quarter-wave; The 156th layer is low-index film, is stacked on the 155th tunic layer, and thickness is 0.8571 times a quarter-wave; The 157th layer is high refractive index layer, is stacked on the 156th tunic layer, and thickness is 0.8816 times a quarter-wave; The 158th layer is low-index film, is stacked on the 157th tunic layer, and thickness is 0.8610 times a quarter-wave; The 159th layer is high refractive index layer, is stacked on the 158th tunic layer, and thickness is 0.8008 times a quarter-wave; The 160th layer is low-index film, is stacked on the 159th tunic layer, and thickness is 0.9363 times a quarter-wave; Dip stratum is a high refractive index layer, is stacked on the 160th tunic layer, and thickness is 0.8614 times a quarter-wave; The 162nd layer is low-index film, is stacked on the dip stratum rete, and thickness is 0.7339 times a quarter-wave; The 163rd layer is high refractive index layer, is stacked on the 162nd tunic layer, and thickness is 0.8306 times a quarter-wave; The 164th layer is low-index film, is stacked on the 163rd tunic layer, and thickness is 0.8871 times a quarter-wave; The 165th layer is high refractive index layer, is stacked on the 164th tunic layer, and thickness is 0.5526 times a quarter-wave.(spectrum character diagram of second portion please be joined shown in Figure 5, and the noise of selected channel one side is eliminated)
Usually, the thickness of quarter-wave film is that an extreme value o'clock is arranged in nd=λ/4, adopts penetration precision 0.01% automatic monitored control system to carry out film thickness monitoring, that is to say that (peak value or valley) light control system stops monitoring at once when thickness reaches extreme value.The refractive index of high refractive index layer is generally 2.1-2.4, and the refractive index of low-index film is generally 1.44.Non-quarter-wave thickness is according to wavelength coverage given in advance, is that centre wavelength produces by computer random with 1470nm.
The CWDM optical filter that general optical communication is used mostly adopts quarter-wave to pile up the identical assembly of thin films of several structures and forms, but in its 1260nm-1640nm wave band except the affiliated signal of this optical filter other wavelength coverage can produce light leak or noise.The CWDM optical filter that the present invention eliminates noise is adopting quarter-wave to pile up on the basis of the identical resonator cavity of several structures (cavity), continue to pile up the different quarter-wave rete of several structures, make it can eliminate this light leak or noise phenomenon, thereby can in the wavelength band of optical communication, be more widely used.
Claims (12)
1. a CWDM optical filter comprises first and second portion, and first comprises at least two Fabry-Perot cavity structures; Second portion is included in and repeats in the first alternately to pile up several layers of non-quarter-wave film layer structure with the high and low refractive index rete; Wherein, second portion comprises 29 layers of high and low refractive index rete that alternately piles up, and the thickness of its non-quarter-wave film layer is according to wavelength coverage given in advance, is that centre wavelength produces by computer random with 1470nm.
2. CWDM optical filter as claimed in claim 1, wherein: at least two Fabry-Perot cavity structures of first are followed this rule:
(LH)
36L (HL)
3H (LH)
32L (HL)
3H (LH)
46L (HL)
4H (LH)
34L (HL)
3H (LH)
46L (HL)
4H (LH)
34L (HL)
3H (LH)
46L (HL)
4H (LH)
32L (HL)
3H (LH)
36L (HL)
2H/N
sWherein, N
sThe expression substrate, L represents λ
0/ 4 low-index film; H represents λ
0/ 4 high refractive index layer.
3. CWDM optical filter as claimed in claim 2, wherein: first can be made up of 136 tunic layers.
4. CWDM optical filter as claimed in claim 3, wherein: the film layer structure of second portion is: the 137th layer is high refractive index layer, is stacked on the 136th tunic layer, and thickness is 0.6147 times a quarter-wave; The 138th layer is low-index film, is stacked on the 137th layer, and thickness is 0.9150 times a quarter-wave; The 139th layer is high refractive index layer, is stacked on the 138th layer, and thickness is 0.8560 times a quarter-wave; The 140th layer is low-index film, is stacked on the 139th tunic layer, and thickness is 0.8383 times a quarter-wave; The 141st layer is high refractive index layer, is stacked on the 140th tunic layer, and thickness is 0.7836 times a quarter-wave; The 142nd layer is low-index film, is stacked on the 141st tunic layer, and thickness is 0.8146 times a quarter-wave; The 143rd layer is high refractive index layer, is stacked on the 142nd tunic layer, and thickness is 0.7698 times a quarter-wave; The 144th layer is low-index film, is stacked on the 143rd tunic layer, and thickness is 0.7993 times a quarter-wave; The 145th layer is high refractive index layer, is stacked on the 144th tunic layer, and thickness is 0.8286 times a quarter-wave; The 146th layer is low-index film, is stacked on the 145th tunic layer, and thickness is 0.9172 times a quarter-wave; The 147th layer is high refractive index layer, is stacked on the 146th tunic layer, and thickness is 0.8540 times a quarter-wave; The 148th layer is low-index film, is stacked on the 147th tunic layer, and thickness is 1.1421 times a quarter-wave; The 149th layer is high refractive index layer, is stacked on the 148th tunic layer, and thickness is 0.8356 times a quarter-wave; The 150th layer is low-index film, is stacked on the 149th tunic layer, and thickness is 0.8967 times a quarter-wave; The 151st layer is high refractive index layer, is stacked on the 150th tunic layer, and thickness is 0.8087 times a quarter-wave; The 152nd layer is low-index film, is stacked on the 151st tunic layer, and thickness is 0.8479 times a quarter-wave; The 153rd layer is high refractive index layer, is stacked on the 152nd tunic layer, and thickness is 0.8031 times a quarter-wave; The 154th layer is low-index film, is stacked on the 153rd tunic layer, and thickness is 0.8515 times a quarter-wave; The 155th layer is high refractive index layer, is stacked on the 154th tunic layer, and thickness is 0.8362 times a quarter-wave; The 156th layer is low-index film, is stacked on the 155th tunic layer, and thickness is 0.8571 times a quarter-wave; The 157th layer is high refractive index layer, is stacked on the 156th tunic layer, and thickness is 0.8816 times a quarter-wave; The 158th layer is low-index film, is stacked on the 157th tunic layer, and thickness is 0.8610 times a quarter-wave; The 159th layer is high refractive index layer, is stacked on the 158th tunic layer, and thickness is 0.8008 times a quarter-wave; The 160th layer is low-index film, is stacked on the 159th tunic layer, and thickness is 0.9363 times a quarter-wave; Dip stratum is a high refractive index layer, is stacked on the 160th tunic layer, and thickness is 0.8614 times a quarter-wave; The 162nd layer is low-index film, is stacked on the dip stratum rete, and thickness is 0.7339 times a quarter-wave; The 163rd layer is high refractive index layer, is stacked on the 162nd tunic layer, and thickness is 0.8306 times a quarter-wave; The 164th layer is low-index film, is stacked on the 163rd tunic layer, and thickness is 0.8871 times a quarter-wave; The 165th layer is high refractive index layer, is stacked on the 164th tunic layer, and thickness is 0.5526 times a quarter-wave.
5. CWDM optical filter as claimed in claim 2, wherein: described central wavelength lambda 0 is 1470nm.
6. CWDM optical filter as claimed in claim 2, wherein: described central wavelength lambda 0 is 1490nm.
7. as claim 2 or 5 or 6 described CWDM optical filters, wherein: its peak transmittance is greater than 90%.
8. as claim 3 or 6 or 7 described CWDM optical filters, wherein: its cutoff wavelength is: shortwave 1230nm-1457nm, long wave 1483nm-1830nm.
9. as claim 2 or 5 or 6 described CWDM optical filters, wherein: the surface finish diameter of described substrate is 90mm, the thick 10mm of being, comprises elements such as monox, barium, lithium, sodium.
10. as claim 2 or 5 or 6 described CWDM optical filters, wherein: link with linking layer between adjacent two Fabry-Perot cavity structures of first.
11. CWDM optical filter as claimed in claim 10, wherein: each Fabry-Perot cavity structure is made up of the multiple film layer structure of two odd numbers or even level.
12. CWDM optical filter as claimed in claim 2, wherein: the matching layer of each Fabry-Perot cavity structure adopts the thickness of the quarter-wave low-refraction of even-multiple.
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| CNB200410071703XA CN100376904C (en) | 2004-07-16 | 2004-07-16 | CWDM light filter |
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|---|---|---|---|
| CNB200410071703XA CN100376904C (en) | 2004-07-16 | 2004-07-16 | CWDM light filter |
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| CN117991431A (en) * | 2024-04-03 | 2024-05-07 | 南京九川科学技术有限公司 | Filter device, imaging system and preparation method of filter device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354371A (en) * | 2001-12-07 | 2002-06-19 | 中国科学院上海技术物理研究所 | Super narrow bandpass optical film filter and film layer thickness generation method |
| JP2004029524A (en) * | 2002-06-27 | 2004-01-29 | Nippon Telegr & Teleph Corp <Ntt> | Optical multilayer film filter |
| JP2004037830A (en) * | 2002-07-03 | 2004-02-05 | Nippon Telegr & Teleph Corp <Ntt> | Optical multilayer film filter |
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2004
- 2004-07-16 CN CNB200410071703XA patent/CN100376904C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354371A (en) * | 2001-12-07 | 2002-06-19 | 中国科学院上海技术物理研究所 | Super narrow bandpass optical film filter and film layer thickness generation method |
| JP2004029524A (en) * | 2002-06-27 | 2004-01-29 | Nippon Telegr & Teleph Corp <Ntt> | Optical multilayer film filter |
| JP2004037830A (en) * | 2002-07-03 | 2004-02-05 | Nippon Telegr & Teleph Corp <Ntt> | Optical multilayer film filter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI585471B (en) * | 2014-10-28 | 2017-06-01 | 鴻海精密工業股份有限公司 | Filter and lens module having same |
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| CN1721887A (en) | 2006-01-18 |
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