CN100372134C - A Prague reflector structure for LED - Google Patents
A Prague reflector structure for LED Download PDFInfo
- Publication number
- CN100372134C CN100372134C CNB03138854XA CN03138854A CN100372134C CN 100372134 C CN100372134 C CN 100372134C CN B03138854X A CNB03138854X A CN B03138854XA CN 03138854 A CN03138854 A CN 03138854A CN 100372134 C CN100372134 C CN 100372134C
- Authority
- CN
- China
- Prior art keywords
- distributed bragg
- bragg reflector
- prague
- thickness
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 238000000985 reflectance spectrum Methods 0.000 abstract description 18
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 230000010363 phase shift Effects 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 10
- 101100442490 Artemisia annua DBR2 gene Proteins 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
The present invention discloses a Prague reflector structure for LEDs, which is an emitter composed of two sets or more than two sets of Prague reflectors. The present invention is characterized in that a phase adjusting layer is arranged between the Prague reflectors, and the optical thickness of the phase adjusting layer is different from the thickness of the layers of the Prague reflectors at both sides of the phase adjusting layer; the thickness of the phase adjusting layer can be adjusted, and the periodicity of the Prague reflectors can be adjusted; because the phase adjusting layer is arranged between the Prague reflectors which are overlapped, the shapes of reflectance spectra can be effectively adjusted, and the aim of reflection can be effectively achieved. The present invention is favorable to the improvement of the luminescence efficiency of the LEDs.
Description
Technical field
The present invention relates to a kind of Bragg reflection body structure that can be used for light-emitting diode.
Background technology
Distributed bragg reflector is a kind of cycle material structure, generally includes two kinds of refractive index differences, and optical thickness equals the periodic unit material of 1/4th optical wavelength.Distributed bragg reflector is widely used in the photoelectric device design, with part incident light reflected back incident zone.For the light of low incidence angle, the reflectance spectrum width of distributed bragg reflector is limited, can't reflect the light of all incidence angles simultaneously.In order to improve Bragg reflection efficient and reflection angle, need to improve the reflectance spectrum width.Existing method adopts the distributed bragg reflector of stacked again different reflection kernel wavelength, or cycle gradual change distributed bragg reflector improves the reflectance spectrum width.
At this, we are example with Al GaInP four-element LED, set forth concrete structure of the present invention and application.Fig. 1 is the conventional structure of light-emitting diode.Comprise a substrate 1,2, the first kinds of conductivity charge carriers of distributed bragg reflector inject limiting layer 3, and 4, the second kinds of conductivity of active layer and the charge carrier of control emission wavelength inject limiting layer 5, and current extending 6.The effect of distributed bragg reflector in this structure is that maximal efficiency ground reflects visible light the GaAs substrate that absorbs to radiant light.
Desirable distributed bragg reflector reply radiant light does not absorb, reflection coefficient height, and reflection spectrum width.Yet above requirement can't reach simultaneously.Do not absorb for radiant light, its refringence that can be used for the material of distributed bragg reflector is restricted, more little for the distributed bragg reflector refringence with same period number, reflectance spectrum is narrow more, and reflectivity is low more.For the distributed bragg reflector of identical refringence, periodicity is many more, and reflectivity is high more, but reflectance spectrum is narrow more.In order to realize the reflectance spectrum of broad, can adopt a cover not absorb DBR and the mutually stacked method of a cover DBR (refringence is bigger).But the method is poor to the control of reverberation spectral pattern.
Summary of the invention
The object of the invention is to propose a kind of Bragg reflection body structure that can be used for light-emitting diode, to improve reflectance spectrum shape, improves light extraction efficiency.
The present invention proposes a kind of Bragg reflection body structure that can be used for light-emitting diode, overlap the emitter that above distributed bragg reflector is formed by two covers or two, it is characterized in that between per two cover distributed bragg reflectors one deck phase place being set adjusts layer, its optical thickness is different from any cover Bragg reflection bulk layer thickness of any side.
The thickness of phase place adjustment layer can be adjusted, and the periodicity of distributed bragg reflector can be adjusted.
Adjust layer because the present invention increases phase place between mutually stacked distributed bragg reflector, the reflectance spectrum shape is carried out effectively adjusted, more effectively reach the reflection purpose; The phase shift distributed bragg reflector has bigger spectrum width and better composes shape, changes gently on the spectrum top, helps improving the luminous efficiency of light-emitting diode.
Description of drawings
Fig. 1 is the conventional structure schematic diagram of light-emitting diode;
Fig. 2 is a phase shift distributed bragg reflector structural representation of the present invention;
Fig. 3 is phase shift distributed bragg reflector and two kinds of reflectance spectrum comparison diagrams that conventional Bragg reflection body structure is corresponding;
Fig. 4 is the reflection spectrogram of another kind of phase shift distributed bragg reflector.
Specific embodiment
The present invention proposes a kind of Bragg reflection body structure that can be used for light-emitting diode, overlap the emitter that above distributed bragg reflector is formed by two covers or two, it is characterized in that being provided with one deck phase place and adjust layer between distributed bragg reflector, its optical thickness is different from the Bragg reflection bulk layer thickness of its both sides; The thickness of phase place adjustment layer can be adjusted, and the periodicity of distributed bragg reflector can be adjusted; Adjust layer because the present invention increases phase place between mutually stacked distributed bragg reflector, row is effectively adjusted during to the reflectance spectrum shape, more effectively reaches the reflection purpose; The phase shift distributed bragg reflector has bigger spectrum width and better composes shape, changes gently on the spectrum top, helps improving the luminous efficiency of light-emitting diode.
With reference to Fig. 2, for the 595mm radiation wavelength, a cover distributed bragg reflector DBR1 is that the Al0.6Ga0.4As/AlAs of 1.03 times of 1/4 wavelength forms by thickness, has 18 cycles, and phase place adjustment layer thickness is the Al0.6Ga0.4As of 1/2 wavelength.Another set of distributed bragg reflector DBR2 is that thickness is the Al0.6Ga0.4As/AlAs composition of 1.08 times of 1/4 wavelength, has 4 cycles.
Fig. 3 is phase shift distributed bragg reflector and two kinds of reflectance spectrums that conventional distributed bragg reflector is corresponding.Dotted line is the combination of no phase shift DBR1 and DBR2; Heavy line is the reflectance spectrum (DBR1) that DBR1 produces separately.Can see that though DBR1 has higher foveal reflex rate, reflectance varies is not mild, and reflectance spectrum is narrower.No phase shift DBR is stacked, and the broad reflectance spectrum is arranged, but spectrum shape is not mild on the spectrum top.The introducing that the phase shift distributed bragg reflector has bigger spectrum width and better composes phase-shifted region is the Bragg reflection spectral shape is carried out more effective adjustment, to increase the design freedom of reflectance spectrum.
Fig. 4 is the reflectance spectrum of another kind of phase shift distributed bragg reflector.The structure of this phase shift distributed bragg reflector is: for the 595mm radiation wavelength, a cover distributed bragg reflector DBR1 is that the Al0.6Ga0.4As/AlAs of 1.11 times of 1/4 wavelength forms by thickness, has 10 cycles; It is the Al0.6Ga0.4As of 1.4 times of 1/4 wavelength that phase place is adjusted layer thickness; Another set of distributed bragg reflector DBR2 is that thickness is the Al0.6Ga0.4As/AlAs composition of 1.0 times of 1/45 wavelength, has 14 cycles.This phase shift distributed bragg reflector has bigger reflection spectrum width (116mm), three the contour reflection peaks of having an appointment on the spectrum top.This reflectance spectrum shape can be carried out active adjustment to the light-emitting diode rising angle.
Claims (2)
1. Bragg reflection body structure that can be used for light-emitting diode, overlap the emitter that above distributed bragg reflector is formed by two covers or two, it is characterized in that between per two cover distributed bragg reflectors one deck phase place being set adjusts layer, its optical thickness is different from any cover Bragg reflection bulk layer thickness of any side.
2. a kind of Bragg reflection body structure that can be used for light-emitting diode according to claim 1 is characterized in that the thickness of phase place adjustment layer can be adjusted, and the periodicity of distributed bragg reflector can be adjusted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03138854XA CN100372134C (en) | 2003-07-23 | 2003-07-23 | A Prague reflector structure for LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03138854XA CN100372134C (en) | 2003-07-23 | 2003-07-23 | A Prague reflector structure for LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1571173A CN1571173A (en) | 2005-01-26 |
| CN100372134C true CN100372134C (en) | 2008-02-27 |
Family
ID=34470623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB03138854XA Expired - Lifetime CN100372134C (en) | 2003-07-23 | 2003-07-23 | A Prague reflector structure for LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100372134C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859852B (en) * | 2010-05-13 | 2011-09-14 | 厦门市三安光电科技有限公司 | Manufacturing process for improving capacity of aluminum gallium indium phosphorus light-emitting diodes |
| CN102856453B (en) * | 2012-09-14 | 2016-03-30 | 合肥彩虹蓝光科技有限公司 | There is the quaternary system LED chip of Bragg reflection structure |
| CN109728199A (en) * | 2019-01-03 | 2019-05-07 | 京东方科技集团股份有限公司 | Reflecting electrode and preparation method thereof, Organic Light Emitting Diode and display device |
| CN112909139A (en) * | 2021-02-01 | 2021-06-04 | 扬州乾照光电有限公司 | LED chip based on DBR structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920542A (en) * | 1988-11-25 | 1990-04-24 | Alcatel N.V. | Tunable semiconductor laser |
| CN1267108A (en) * | 2000-03-21 | 2000-09-20 | 广州亮达光电器件有限公司 | Electronic Bragg reflector and its application in LED |
| CN1355569A (en) * | 2000-11-27 | 2002-06-26 | 国联光电科技股份有限公司 | Structure of LED and its preparing process |
-
2003
- 2003-07-23 CN CNB03138854XA patent/CN100372134C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920542A (en) * | 1988-11-25 | 1990-04-24 | Alcatel N.V. | Tunable semiconductor laser |
| CN1267108A (en) * | 2000-03-21 | 2000-09-20 | 广州亮达光电器件有限公司 | Electronic Bragg reflector and its application in LED |
| CN1355569A (en) * | 2000-11-27 | 2002-06-26 | 国联光电科技股份有限公司 | Structure of LED and its preparing process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1571173A (en) | 2005-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106611811B (en) | Light-emitting diode chip for backlight unit with distributed Bragg reflector | |
| US5793062A (en) | Transparent substrate light emitting diodes with directed light output | |
| JP4173556B2 (en) | Ultraviolet / blue LED-phosphor device that efficiently converts ultraviolet / blue light into visible light | |
| US9865783B2 (en) | Distributed Bragg reflector on an aluminum package for an LED | |
| US20170358722A1 (en) | Led with scattering features in substrate | |
| US20110233589A1 (en) | Light-emitting device, light-emitting device package and lighting system | |
| US9385258B2 (en) | Optoelectronic semiconductor device with protective and reflective sheaths | |
| US20080035944A1 (en) | Radiation emitting element | |
| CN104115050A (en) | Optical element for uniform lighting | |
| TW200814376A (en) | Lighting arrangement | |
| CN111092138A (en) | Flip-chip type light emitting diode chip | |
| CN108700731A (en) | Optical lens and lamp unit and the lighting apparatus with it | |
| US11862756B2 (en) | Solid state transducer dies having reflective features over contacts and associated systems and methods | |
| US20230024758A1 (en) | Light emitting device | |
| CN107370021A (en) | Surface emitting laser device | |
| CN100372134C (en) | A Prague reflector structure for LED | |
| US20100289047A1 (en) | Light Emitting Element and Illumination Device | |
| US20050104078A1 (en) | Light-emitting diode having chemical compound based reflective structure | |
| JP2003179255A (en) | Method of selectively providing quantum well in flip chip light emitting diode for improving light extraction | |
| CN101689591B (en) | Optoelectronic semiconductor chip | |
| CN100477298C (en) | A LED epitaxy structure | |
| JP2003209293A (en) | Light emitting diode | |
| US10937934B2 (en) | Light emitting device package and lighting source device | |
| JP4135528B2 (en) | Lighting device | |
| WO2009107661A1 (en) | Light emitter and semiconductor light-emitting device using same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: XIAMEN SAN'AN ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAN-AN ELECTRONICS CO., LTD., XIAMEN Effective date: 20071102 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20071102 Address after: 361009 Fujian city of Xiamen Province Lu Ling Road No. 1721 Applicant after: Xiamen San'an Electronics Co.,Ltd. Address before: 361009, Xiamen, Fujian City, Zhejiang Province, wing Ling Kai Kaiyuan science and Technology Park on the third floor Applicant before: Xiamen San'an Electronics Co.,Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SAN-AN ELECTRONICS CO., LTD., XIAMEN Free format text: FORMER OWNER: XIAMEN SAN'AN ELECTRONICS CO., LTD. Effective date: 20080201 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20080201 Address after: Fujian province Xiamen City Luling Road No. 1721 Patentee after: Xiamen San'an Electronics Co.,Ltd. Address before: Fujian province Xiamen City Luling Road No. 1721 Patentee before: Xiamen San'an Electronics Co.,Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: SANAN OPTO-EELECTRICAL SCIENCE CO., LTD., XIAMEN Free format text: FORMER OWNER: SAN-AN ELECTRONICS CO., LTD., XIAMEN Effective date: 20080829 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20080829 Address after: Fujian province Xiamen City Luling Road No. 1725 1721 Patentee after: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: Fujian province Xiamen City Luling Road No. 1721 Patentee before: Xiamen San'an Electronics Co.,Ltd. |
|
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Anhui Sanan Optoelectronics Co.,Ltd. Assignor: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Contract record no.: 2011340000311 Denomination of invention: A Prague reflector structure for LED Granted publication date: 20080227 License type: Exclusive License Open date: 20050126 Record date: 20110811 |
|
| CX01 | Expiry of patent term |
Granted publication date: 20080227 |
|
| CX01 | Expiry of patent term |