CN100372119C - Semiconductor structure with composite polycrystalline silicon layer and display panel applying same - Google Patents
Semiconductor structure with composite polycrystalline silicon layer and display panel applying same Download PDFInfo
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- CN100372119C CN100372119C CNB2005100519599A CN200510051959A CN100372119C CN 100372119 C CN100372119 C CN 100372119C CN B2005100519599 A CNB2005100519599 A CN B2005100519599A CN 200510051959 A CN200510051959 A CN 200510051959A CN 100372119 C CN100372119 C CN 100372119C
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 246
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000002131 composite material Substances 0.000 title claims description 31
- 229920005591 polysilicon Polymers 0.000 claims abstract description 243
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 84
- 239000013078 crystal Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 description 16
- 238000005224 laser annealing Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000005499 laser crystallization Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
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Abstract
A semiconductor structure comprises a substrate; a first polysilicon region formed on the substrate; a second polysilicon region formed on the substrate and separated from the first polysilicon region by a gap; an insulating layer formed on the substrate and covering the first polysilicon region and the second polysilicon region; and a third polysilicon region formed on the insulating layer and above the gap. When the third polysilicon region is applied to a display panel, the grain boundary direction of the third polysilicon region in the active display region forms an angle with the channel direction of the active layer, and the grain boundary direction of the third polysilicon region in the driving circuit region is approximately parallel to the channel direction of the active layer.
Description
Technical field
The present invention relates to a kind of semiconductor structure of tool composite polysilicon layer and the display floater of application thereof, particularly relate to a kind of the have semiconductor structure of the low compound polysilicon of specific crystal boundary direction and surface roughness and the display floater of application thereof.
Background technology
Organic light emission (Organic Electroluminescence) flat-panel screens is a current driving element, can be divided into passive type matrix method (Passive Matrix Method) and active type matrix method (Active Matrix Method) according to type of drive.(Thin Film Transistor, TFT) collocation electric capacity storage device are controlled the intensity gray scale performance of organic illuminating element (OLED) and active organic luminuous display (AMOLED) utilizes thin-film transistor.
Roughly, the cost of manufacture and the technology door of passive type organic light emitting display (PMOLED) are lower, but it is unclear to be subject to drive current usefulness, resolution can't improve, and under passive drive, scanning line selection to pixel can be lighted, but can't keep brightness, so the application product size limitations is in about 5 " in.Active organic luminuous display is then because there is the event of electric capacity storage assembly, after the inswept pixel of scan line, this pixel still can keep original brightness, hereat OLED does not need to be driven to very high brightness, therefore preferred life-span performance can be reached, also high-resolution demand can be reached.Moreover the drive current usefulness of active organic luminuous display is better than the passive type organic light emitting display, and pixel and electrical components TFT can be integrated on the glass substrate.
The technology of growth TFT on glass substrate, can be amorphous silicon (Amorphous Silicon, a-Si) manufacturing process and low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS) manufacturing process, the maximum of LTPSTFT and a-Si TFT is its electrical and complicated and simple difference of manufacturing process respectively.LTPS TFT has higher carrier mobility, and the higher carrier mobility means that TFT can provide the electric current that more fills part, yet more complicated on its manufacturing process; Otherwise a-Si TFT then, though the carrier mobility of a-Si is not so good as LTPS, its manufacturing process is simpler.
Become the technical elements of polysilicon at the conversion amorphous silicon, developed at present and multiple method for crystallising, quasi-molecule laser annealing (Excimer Laser Annealing for example, ELA) technology, continuous crystallisation (Continuous Grain Silicon, CGS) technology, laser transverse crystallizing (Sequential LateralSolidification, SLS) technology and metal induced transverse crystallizing (Metal Induced LateralCrystallization, MILC) technology etc.And that the laser that is used also has is multiple, as excimer laser (Excimer Laser), and continuous wave laser (Continuous Wave (CW) Laser) and laser beam pulses (Laser Beam Pulse) etc.Wherein, compare, use the continuous wave laser annealing way can obtain the polysilicon membrane of big crystallite dimension with the quasi-molecule laser annealing method.Generally speaking, the crystal grain big carrier mobility that heals is better, can be up to about 566cm with the carrier mobility of n type element
2Therefore at present/s-V is attracted attention with continuous wave laser again at the technical elements that the conversion amorphous silicon becomes polysilicon most.
Yet, utilize continuous wave laser (CW Laser) polysilicon grain that annealing way produced, its crystal boundary (Grain Boundary) is difficult to control, and very coarse of polysilicon layer surface, please refer to Fig. 8 (a), Fig. 9 (a), very big influence electrically arranged for application element thereof.With thin-film transistor (Thin FilmTransistor, TFT) active layer in the element is an example, if the polysilicon layer surface very coarse (i.e. surface irregularity) in the active layer, when above polysilicon layer, forming a grid oxic horizon (Gate Oxide Layer), can change near the oxide layer structure of polysilicon layer high spot, make follow-uply easily the oxide layer eating thrown to be exposed polysilicon layer when carrying out the etching manufacturing process.In addition, when applying a voltage, be easy to generate the phenomenon of point discharge in the prominence on coarse polysilicon layer surface, cause the electrical performance of element on the same substrate very unstable in TFT.In order to obtain more level and smooth polysilicon layer surface, still changing amorphous silicon in the quasi-molecule laser annealing mode becomes polysilicon traditionally.
Fig. 1 illustrates a kind of schematic diagram of semiconductor structure of traditional tool composite polysilicon layer.As shown in Figure 1, having a patterned insulation layer 4 on substrate 2, for example is an oxide layer, and deposition one amorphous silicon layer above patterned insulation layer 4 utilizes the quasi-molecule laser annealing mode to convert amorphous silicon layer to a polysilicon layer 6 more then.Though use the quasi-molecule laser annealing mode can form the lower polysilicon surface of roughness, yet the crystal grain that is produced is less, please refer to Fig. 8 (b), accompanying drawing 9 (b), carrier mobility is low, its electrical performance is not good during as the element of active layer.
Therefore, how to develop one and can produce specific crystal boundary direction and the low polysilicon layer of surface roughness, the element that makes application is the carrier mobility height not only, and electrical performance is also stable and good, and real is developer's one significant effort target.
Summary of the invention
In view of this, purpose of the present invention is exactly the display floater in semiconductor structure that a kind of tool composite polysilicon layer is provided and application thereof, it is the crystal boundary and the low surface roughness of rule, can make its carrier mobility height of display floater of application, and have excellent electrical property.
According to purpose of the present invention, a kind of semiconductor structure is proposed, comprising: a substrate; One first polysilicon region is formed on the substrate; One second polysilicon region is formed on the substrate, and and first polysilicon region between separate a spacing; One insulating barrier is formed on the substrate, and covers first polysilicon region and second polysilicon region; And one the 3rd polysilicon region, be formed on the insulating barrier, and be positioned at the top of spacing.
According to purpose of the present invention, a kind of display floater is also proposed, comprise that a substrate and a composite polysilicon layer are formed on the substrate.Comprise an active formula viewing area and one drive circuit zone on the substrate.Composite polysilicon layer comprises: one first composite polysilicon layer is positioned at active formula viewing area; Second composite polysilicon layer is positioned at drive circuit area.
Wherein, first composite polysilicon layer comprises one first polysilicon region, one second polysilicon region and one the 3rd polysilicon region, and separate one first spacing between first polysilicon region and second polysilicon region, the 3rd polysilicon region is positioned at the top of first spacing, and first polysilicon region, second polysilicon region and the 3rd polysilicon region are with one first insulating barrier electrical isolation, and an active layer channel direction of the crystal boundary direction of the 3rd polysilicon region and active formula viewing area at angle.
Wherein, second composite polysilicon layer comprises one the 4th polysilicon region, one the 5th polysilicon region and one the 6th polysilicon region, and separate one second spacing between the 4th polysilicon region and the 5th polysilicon region, the 6th polysilicon region is positioned at the top of second spacing, and the 4th polysilicon region, the 5th polysilicon region and the 6th polysilicon region are with one second insulating barrier electrical isolation, and the crystal boundary direction of the 6th polysilicon region is roughly parallel to an active layer channel direction of drive circuit area.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Fig. 1 illustrates a kind of schematic diagram of semiconductor structure of traditional tool composite polysilicon layer.
Fig. 2, it illustrates the schematic diagram according to the semiconductor structure of the tool composite polysilicon layer of one embodiment of the present invention.
Fig. 3 A～3E, it illustrates the manufacture method according to the semiconductor structure of first embodiment of the invention.
Fig. 4 A～4F, it illustrates the manufacture method according to the semiconductor structure of second embodiment of the invention.
Fig. 5 illustrates a kind of schematic diagram of active formula display element.
Fig. 6 A, 6B illustrate its crystal boundary of semiconductor structure of application one embodiment of the invention and the arrangement schematic diagram of active layer channel direction respectively.
Fig. 7 A, 7B illustrate the semiconductor structure of application one embodiment of the invention respectively in the generalized section of active formula viewing area and drive circuit area.
Fig. 8 (a) schemes for the scanning electron microscope (SEM) of the polysilicon membrane that continuous wave laser is produced.
Fig. 8 (b) schemes for the scanning electron microscope (SEM) of the polysilicon membrane that excimer laser is produced.
Fig. 9 (a) schemes for the atomic force microscope (AFM) of the polysilicon membrane that continuous wave laser is produced.
Fig. 9 (b) schemes for the atomic force microscope (AFM) of the polysilicon membrane that excimer laser is produced.
Figure 10 (a) be tradition with the continuous wave laser crystallization produced more than atomic force microscope (AFM) figure (height of observation=460nm) of polycrystal silicon film.
Figure 10 (b) be according to the embodiment of the invention with the continuous wave laser crystallization produced more than atomic force microscope (AFM) figure (height of observation=397nm) of polycrystal silicon film.
Figure 11 (a) is the scanning electron microscope with the produced polysilicon membrane of continuous wave laser crystallization (SEM) figure according to the embodiment of the invention.
Figure 11 (b) is the partial enlarged drawing of Figure 11 (a), and its crystal boundary direction all can be grown up along specific direction.
Figure 12 is the calculating schematic diagram of center line average boldness Ra.
Figure 13 is the calculating schematic diagram of rugosity maximum Rt.
Figure 14 is the calculating schematic diagram of radical sign mean square root rugosity Rms.
The simple symbol explanation
2,11,31,41,601: substrate
4: patterned insulation layer
6: polysilicon layer
14,34,44,74,84: the first polysilicon regions
16,36,46,76,86: the second polysilicon regions
18,38,48,78,88: insulating barrier
20,40,50,80,90: the three polysilicon regions
D, d1, d2: spacing
32,42: the first amorphous silicon layers
33,43: the first amorphous silicon regions
35,43: the second amorphous silicon regions
39,49: the second amorphous silicon layers
60: active formula display element
603: active formula viewing area
605: drive circuit area
GB1, GB2: crystal boundary
CH1, CH2: active layer passage
703: the first composite polysilicon layers
705: the second composite polysilicon layers
Embodiment
Please refer to Fig. 2, it illustrates the schematic diagram according to the semiconductor structure of the tool composite polysilicon layer of one embodiment of the present invention.Semiconductor structure comprises a substrate 11, one first polysilicon regions 14, one second polysilicon region 16, an insulating barrier 18 and one the 3rd polysilicon region 20.Wherein, first polysilicon region 14 and second polysilicon region 16 are formed on the substrate 11, and separate a spacing d between the two.Insulating barrier 18 is formed on the substrate 11, covers and electrical isolation first polysilicon region 14 and second polysilicon region 16.The 3rd polysilicon region 20 is formed on the insulating barrier 18, and is positioned at the top of spacing d.
Below with two embodiment the manufacture method that forms semiconductor structure of the present invention is described.
First embodiment
Please refer to Fig. 3 A～3E, it illustrates the manufacture method according to the semiconductor structure of first embodiment of the invention.At first, provide a substrate 31, and form one first amorphous silicon layer 32 on substrate 31, as shown in Figure 3A.Then, patterning first amorphous silicon layer 32 is to form one first amorphous silicon region 33 and one second amorphous silicon region 35 on substrate 31, shown in Fig. 3 B.At this moment, first amorphous silicon region 33 and second amorphous silicon region 35 are separated a spacing d.
Then, form an insulating barrier 38 on substrate 31, and cover first amorphous silicon region 33 and second amorphous silicon region 35, shown in Fig. 3 C.Wherein, insulating barrier 38 for example is an oxide layer, and its thickness range is between 10nm and 500nm.Afterwards, form one second amorphous silicon layer 39 again on insulating barrier 38, shown in Fig. 3 D.At last, impose an annealing in process, to convert first amorphous silicon region 33, second amorphous silicon region 35 and second amorphous silicon layer 39 to first polysilicon region 34, second polysilicon region 36 and the 3rd polysilicon region 40 respectively, shown in Fig. 3 E.
In first embodiment, preferably with a continuous wave laser (CW Laser) annealing way scanning substrate 31, with step as annealing in process.When heating with continuous wave laser; can be with first amorphous silicon region 33; second amorphous silicon region 35 (lower floor) and second amorphous silicon layer 39 (upper strata) melt; therefore the silicon of second amorphous silicon layer, 39 liquid state can be concentrated by eminence because of surface tension and flow to lower; when solidifying afterwards; liquid silicon can be solidified by lower mediad both sides; this sample loading mode can obtain a smooth surface because of the projection of avoiding solidifying time extruding to cause; that is according to the surface roughness of embodiment crystallization; shown in Figure 10 (b); than coming lowly according to the surface roughness of conventional junction crystallization; shown in Figure 10 (a); and because this structure gives a specific direction of heat flow; make crystal grain can produce the crystal boundary of a rule, as Figure 11 (a) along the specific direction growth; shown in Figure 11 (b).
Second embodiment
Please refer to Fig. 4 A～4F, it illustrates the manufacture method according to the semiconductor structure of second embodiment of the invention.At first, provide a substrate 41, and form one first amorphous silicon layer 42 on substrate 41, shown in Fig. 4 A.Then, patterning first amorphous silicon layer 42 is to form one first amorphous silicon region 43 and one second amorphous silicon region 45 on substrate 41, shown in Fig. 4 B.At this moment, first amorphous silicon region 43 and second amorphous silicon region 45 are separated a spacing d.
Then, crystallization first amorphous silicon region 43 and second amorphous silicon region 45 are to form first polysilicon region 44 and second polysilicon region 46 respectively, shown in Fig. 4 C.Crystallization mode can be continuous wave laser annealing, quasi-molecule laser annealing or pulse type laser annealing wherein any, be not particularly limited at this.
Then, form an insulating barrier 48 on substrate 41, and cover first polysilicon region 44 and second polysilicon region 46, shown in Fig. 4 D.Wherein, insulating barrier 48 for example is an oxide layer, and its thickness range is between 10nm and 500nm.Afterwards, form one second amorphous silicon layer 49 again on insulating barrier 48, shown in Fig. 4 E.At last, impose an annealing in process, to convert second amorphous silicon layer 49 to the 3rd polysilicon region 50, shown in Fig. 4 F.In a second embodiment, preferably with a pulse type laser annealing way scanning substrate 41, to form the 3rd polysilicon region 50.
The rugosity experiment
Structure (as shown in Figure 1) after semiconductor structure behind the laser crystallization of the present invention (as shown in Figure 2) and the conventional laser crystallization measures its shaggy degree, and the part measurement is listed in table one.
Table one
| Center line average boldness Ra (nm) | Root mean square rugosity Rms (nm) | Rugosity maximum Rmax (nm) | |
| Traditional structure | 22.1 | 15.1 | 460.1 |
| Structure of the present invention | 2.8 | 3.5 | 19.9 |
Shown in table one result: semiconductor structure of the present invention can reduce the average roughness degree (Ra, Rms) of difference of height (Rt, Rmax) and unit are really effectively.
Find from experimental result repeatedly: semiconductor structure of the present invention, no matter be made by the manufacture method of first embodiment or second embodiment, its rugosity maximum of the 3rd polysilicon region 20 with certain party tropism crystallization is approximately less than 25nm, and root mean square (Rms) rugosity is approximately less than 5nm.Roughness calculating method is as follows:
Center line average boldness Ra-please refer to Figure 12.The direction of center line, get its measurement length L from roughness curve, and the absolute value of the bias of center line of this part and roughness curve in addition the resulting value of average computation be center line average boldness Ra.As for measurement length in the JIS standard be with cutoff value be principle more than 3 times, be that 5 times with cutoff value are principle in the ISO standard.When being the decision content on surface with Ra, its value is the concavo-convex average computation of doing with the measurement length total length, so in part there is the following time of situation of scratch greatly, does not also have too much influence for Ra.
Rugosity maximum Rt (Rmax)-please refer to Figure 13.Get its datum length L from roughness curve, up and down during closing, the difference of (crest is to trough) is rugosity maximum Rt (Rmax) between its two straight line with two parallel straight lines at heart line position therein.
Root mean square rugosity Rms (Rq)-please refer to Figure 14.The direction of center line, get its measurement length L from roughness curve, and the deviate of center line of this part and roughness curve square do integration in the interval of measurement length L, be root mean square rugosity Rms (Rq) and open radical sign again in value of its interval average gained.
In addition, when practical application, zones of different has different performance requirements in the display element, and therefore the polysilicon layer with directivity crystallization of the present invention can be done proper arrangement according to the needs of application element thereof.Please be simultaneously with reference to Fig. 5,6A～6B, 7A～7B.Fig. 5 illustrates a kind of schematic diagram of active formula display element.Fig. 6 A, 6B illustrate the crystal boundary of its semiconductor structure of application one embodiment of the invention and the arrangement schematic diagram of active layer channel direction respectively.
As shown in Figure 5, be example with an active formula display element 60, generally comprise an active formula viewing area (Displaying Region) (or claiming pixel region) 603 and one drive circuit zone (Current Driving Region) 605 on the substrate 601.
Whether pay attention to the electrical uniformity in active formula viewing area 603 good, therefore, at the semiconductor structure of using one embodiment of the invention during in active formula viewing area 603, active layer passage (CH1) direction that preferably makes its crystal boundary of polysilicon layer (GB1) with directivity crystallization and active formula viewing area is (non-parallel setting) θ at angle, as shown in Figure 6A.The scope of angle θ for example is about 5 degree between 85 degree.Certainly, when the scope of angle θ is spent greater than 90, then this angle can be considered as 180-θ degree, and the scope of this 180-θ degree for example is about 5 degree between 85 degree.Under preferable case, the angle of this angle θ or 180-θ is 45 degree.
In drive circuit area 605, then pay attention to the electrical performance of carrier mobility (Mobility).And the grain size of polysilicon and crystal boundary systematicness all can impact carrier mobility in the drive circuit area 605.Therefore, at the semiconductor structure of using one embodiment of the invention during in drive circuit area 605, preferably make its crystal boundary of polysilicon layer (GB2) be roughly parallel to active layer passage (CH2) direction of drive circuit area 605, shown in Fig. 6 B with directivity crystallization.
Fig. 7 A, 7B illustrate the semiconductor structure of application one embodiment of the invention respectively in the generalized section of active formula viewing area and drive circuit area.When being applied to active formula viewing area 603, shown in Fig. 7 A, semiconductor structure has one first composite polysilicon layer 703 and is formed on the substrate 601.First composite polysilicon layer 703 comprises first polysilicon region 74, one second polysilicon region 76 and one the 3rd polysilicon region 80, and separates one first spacing d1 between first polysilicon region 74 and second polysilicon region 76.The 3rd polysilicon region 80 is positioned at the top of the first spacing d1, and first polysilicon region 74, second polysilicon region 76 and the 3rd polysilicon region 80 are with first insulating barrier, 78 electrical isolation, and an active layer channel direction of the crystal boundary direction of the 3rd polysilicon region 80 and active formula viewing area 603 at angle.
When being applied to drive circuit area 605, shown in Fig. 7 B, semiconductor structure has one second composite polysilicon layer 705 and is formed on the substrate 601.Second composite polysilicon layer 705 comprises one the 4th polysilicon region 84, one the 5th polysilicon region 86 and one the 6th polysilicon region 90, and separates one second spacing d2 between the 4th polysilicon region 84 and the 5th polysilicon region 86.The 6th polysilicon region 90 is positioned at the top of the second spacing d2, and the 4th polysilicon region 84, the 5th polysilicon region 86 and the 6th polysilicon region 90 are with one second insulating barrier, 88 electrical isolation, and the crystal boundary direction of the 6th polysilicon region 90 is roughly parallel to an active layer channel direction of drive circuit area 605.
As mentioned above, according to the semiconductor structure of one embodiment of the invention, its polysilicon layer not only has the crystallization (crystal boundary rule) of a specific direction, carrier mobility is increased, and its surface roughness is low, can increase the electrical of application element thereof.
In sum; though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention; can do a little change and retouching, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (20)
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| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| US20020036289A1 (en) * | 2000-09-25 | 2002-03-28 | Takuo Tamura | Liquid crystal display element and method of manufacturing the same |
| US20030030074A1 (en) * | 2001-08-13 | 2003-02-13 | Walker Andrew J | TFT mask ROM and method for making same |
| US20030218169A1 (en) * | 2002-01-17 | 2003-11-27 | Atsuo Isobe | Semiconductor device and semiconductor device production system |
| US20030231263A1 (en) * | 2001-11-30 | 2003-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device and manufacturing method thereof |
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| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| US20020036289A1 (en) * | 2000-09-25 | 2002-03-28 | Takuo Tamura | Liquid crystal display element and method of manufacturing the same |
| US20030030074A1 (en) * | 2001-08-13 | 2003-02-13 | Walker Andrew J | TFT mask ROM and method for making same |
| US20030231263A1 (en) * | 2001-11-30 | 2003-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device and manufacturing method thereof |
| US20030218169A1 (en) * | 2002-01-17 | 2003-11-27 | Atsuo Isobe | Semiconductor device and semiconductor device production system |
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