CN100371806C - Display device sealing region pattern and its forming method - Google Patents
Display device sealing region pattern and its forming method Download PDFInfo
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- CN100371806C CN100371806C CNB2005100848543A CN200510084854A CN100371806C CN 100371806 C CN100371806 C CN 100371806C CN B2005100848543 A CNB2005100848543 A CN B2005100848543A CN 200510084854 A CN200510084854 A CN 200510084854A CN 100371806 C CN100371806 C CN 100371806C
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- material layer
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- substrate
- sealing region
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- 238000007789 sealing Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000011368 organic material Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- QPFRMFWZXZLUOH-UHFFFAOYSA-N [Si].C[N] Chemical compound [Si].C[N] QPFRMFWZXZLUOH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 230000008719 thickening Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 46
- 239000010409 thin film Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- -1 Mo) Chemical compound 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
The present invention relates to a display device sealing region pattern and a forming method thereof. The method comprises the following steps; firstly, a first base board and a second base board corresponding to the first base board are provided; subsequently, a preset material layer is arranged in the first base board; then, an organic material pattern layer is formed on the preset material layer and is provided with an opening with jagged patterns, wherein the opening exposes the preset material layer; an included angle of preset degree is formed between a side wall of the organic material pattern layer positioned at the opening with the jagged patterns, and the surface of the preset material layer; at last, preset sealing gum is placed at the opposite position of the jagged opening on the second base plate or is arranged in the jagged opening; the first base board and the second base board are pressed so that the first base board is attached to the second base board.
Description
Technical field
The present invention relates to a kind of display device, particularly relate to sealing region pattern of a kind of display device and forming method thereof.
Background technology
Because there are many factors that cause organic polymer layers quality decline in the thin-film transistor LCD device in context, and then causes performance loss, fluctuation of service and color distortion, and reduction of service life.Particularly, moisture may cause following point: the generation of crystallization and organic solid, the interface of electrode-organic layer produce electrochemical reaction, metal erosion, ion migration.In order to prevent the problems referred to above, thin-film transistor LCD device must suitably be encapsulated, and invades to avoid moisture.
Existing method for packing is to utilize a colored filter substrate to cover whole organic polymer layers, and with a sticking sealing above-mentioned colored filter substrate and thin-film transistor array base-plate is encapsulated.
Yet existing method for packing exists several problems, and for example sealing is peeled off, gap inequality (unevencell gap) and subsequent panel be to the problem of the sealing bubble that produced in the group technology (assembling).
Therefore what industry was needed a kind of improvement badly effectively is encapsulated in colored filter substrate method for packing on the thin-film transistor array base-plate.
Summary of the invention
One of purpose of the present invention is exactly to solve that sealing is peeled off and the problem of gap inequality (uneven cell gap).
Another object of the present invention solves the problem of panel to the sealing bubble that produced in the group technology (assembling) exactly.
For reaching above-mentioned purpose, the present invention mainly provides sealing region pattern of a kind of display device and forming method thereof.The method comprises the following steps: at first, provides one first substrate and to correspond to second substrate of first substrate.Then, form a material layer of being scheduled on this first substrate.Afterwards, form an organic material patterned layer on this predetermined material layer, it has the opening of a saw-tooth like pattern and exposes this predetermined material layer, and be positioned at the sidewall of this organic material patterned layer of opening part of this saw-tooth like pattern and material surface that should be predetermined between, form the angle of a predetermined angular.Then, place a predetermined sealing in this zigzag opening or be coated with a predetermined sealing on second substrate of relative zigzag aperture position, with this first substrate attachment in this second substrate.
In addition, the present invention also provides a kind of pattern of sealing region, comprise: the opening of a saw-tooth like pattern, be arranged in the organic material layer on one first substrate, expose a material layer of being scheduled to of this organic material layer below, and the sidewall of this organic material patterned layer of the opening part of this saw-tooth like pattern and should predetermined material surface between, form the angle of a predetermined angular; And a predetermined sealing, be positioned in this zigzag opening or on second substrate of corresponding this zigzag aperture position, to form a sealing region that is used to adhere to second substrate.
The method according to this invention, because the sidewall of this organic material patterned layer of the opening part of this saw-tooth like pattern and should predetermined material surface between, form the angle of a predetermined angular, therefore, to organizing in the technology, can avoid producing the problem of sealing bubble at follow-up panel.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Figure 1A is the top view that illustrates according to the sealing region of the thin-film transistor LCD device of a comparative example.
Figure 1B is that top view is amplified in the part that illustrates the sealing region of Figure 1A.
Fig. 1 C is the sectional view that illustrates the thin-film transistor LCD device that the horizontal intermittent line AA ' observation post according to Figure 1B gets.
Fig. 2 A to 2C is the process section that illustrates thin-film transistor LCD device according to one preferred embodiment of the present invention.
The simple symbol explanation
132,232～thin-film transistor array base-plate; 134,234～opening; 136～sealing region; Amplify the part of 138～sealing region; 140～colored filter substrate; 142,242～silicon nitride layer; 144,244～organic material layer; 244a～organic material patterned layer; 146,246～glue; 150～bubble; 242a～surface; 244b～sidewall; 248～photomask; 250～ultraviolet light; 260～colored filter substrate; θ, α～predetermined angular; AA '～horizontal intermittent line; M～sealing width; S～central shaft; W1, w2～A/F.
Embodiment
Comparative example
Figure 1A is the top view that illustrates according to the sealing region of the thin-film transistor LCD device of a comparative example.Display device shown in Figure 1A mainly comprises: thin-film transistor array base-plate 132, zigzag opening 134, sealing region 136, colored filter substrate 140.Wherein, placing a sealing 146 (shown in Fig. 1 C) in the zigzag opening 134, to form the above-mentioned sealing region 136 that is used for attachment film transistor (TFT) array substrate 132 and colored filter substrate 140.
Figure 1B is that top view is amplified in the part 138 that illustrates the sealing region of Figure 1A.Wherein, sealing width m between the zone be exactly so-called sealing region 136; The width w1 of zigzag opening 134 equals width w2.And sealing 146 (shown in Fig. 1 C) relatively is uniformly distributed in the both sides of the central shaft S of above-mentioned sealing region 136.In other example, the width w1 of zigzag opening 134 also can be not equal to width w2
According to above-mentioned comparative example, the formation method of above-mentioned sealing region pattern mainly comprises the following steps:
Shown in Fig. 1 C, at first provide a thin-film transistor array base-plate 132.Then, forming one deck for example is that the predetermined material layer of silicon nitride layer 142 is on this thin-film transistor array base-plate 132, as protective seam.
Then, form an organic material layer 144 on this silicon nitride layer 142.Afterwards, carry out a photoetching process, this organic material layer 144 of patterning.
Then, carry out an etch process, form this zigzag opening 134 (shown in Figure 1B) at this organic material layer 144.Afterwards, place a sealing 146 in this zigzag opening 134.
Because the sidewall of this zigzag opening 134 forms about 60 degree with this silicon nitride layer 142 surfaces or greater than 60 angle theta of spending.Therefore, when placement sealing 146 is in this zigzag opening 134, be easy to generate bubble 150.
Embodiment
According to one preferred embodiment of the present invention, a kind of formation method of sealing region pattern of display device comprises the following steps:
Shown in Fig. 2 A, the colored filter substrate 260 (shown in Fig. 2 C) that at first provides a thin-film transistor array base-plate 232 and to correspond to thin-film transistor array base-plate 232.Then, forming one deck for example is that the predetermined material layer of silicon nitride layer 242 is on this thin-film transistor array base-plate 232, as protective seam.In other embodiments, above-mentioned protective seam also can be the composite bed of silicon oxynitride layer, silicon oxide layer, organic dielectric layer or above-mentioned material.In other embodiments, above-mentioned predetermined material layer also can be molybdenum (molybdenum, Mo), titanium (titanium, Ti), aluminium (aluminum, Al), tantalum (Tantalum, Ta), the mixolimnion of metal oxide (metal oxide), metal nitride (metal nitride) or its above-mentioned metal, with as metal electrode layer.
Then, form an organic material layer 244 on this silicon nitride layer 242.Afterwards, carry out a photoetching process, see through this organic material layer 244 of semi-transparent mask 248 (half-tone mask) patterning with ultraviolet light 250.Wherein, this semi-transparent mask 248 has a predetermined pattern, and should predetermined pattern is that opening by different size is arranged in a combination; Because each opening has different penetrabilitys,, and make this organic material layer 244 after the follow-up development etch process of process, have the profile of inclination (taper) so corresponding organic material layer 244 has different depth of exposures under the different openings.Wherein, this organic material layer 244 comprise polymethylmethacrylate (polymethyl methacrylate, PMMA), methyl nitrogen silicon compound (photosensitive-methylsilsesquiazane, PS-MSZ) or the compound of other similarity.
Then, shown in Fig. 2 B, carry out an etch process, form the opening 234 of this saw-tooth like pattern at this organic material layer 244.This opening 234 is similar in appearance to the opening 134 of saw-tooth like pattern shown in Figure 1B.In other embodiments, above-mentioned photomask 248 can be GTG photomask (gray-tone mask) or palisade photomask (slit-pattern mask).In a preferred embodiment, but organic material layer 244 then can save this etch process if use the low dielectric organic material of sensitization.
Via above-mentioned photoengraving carving technology, an organic material patterned layer 244a is formed on this silicon nitride layer 242.Wherein, this organic material patterned layer 244a has the opening 234 of this saw-tooth like pattern and exposes this silicon nitride layer 242, and between the sidewall 244a and this silicon nitride layer 242 surperficial 242a of this organic material patterned layer 244a of the opening part of this saw-tooth like pattern, form the angle of a predetermined angle.And it is adjacent with the opening 234 of this saw-tooth like pattern that this organic material patterned layer 244a has a plurality of parts, and the thickness of these a plurality of parts can be along with the thickening away from the opening of this saw-tooth like pattern.
Above-mentioned predetermined angle is haply less than 60 degree.In other embodiments, the scope of this predetermined angle haply approximately between 20 to 60 the degree between, 50 to 60 the degree between or 10 to 20 the degree between, inferior good person haply approximately between between 30 to 40 degree or 40 to 50 degree between, preferred person is haply approximately between between 20 to 30 degree.
Afterwards, shown in Fig. 2 C, place a sealing 246 of being scheduled in this zigzag opening 234 or on second substrate with respect to zigzag opening 234, this thin-film transistor array base-plate 232 is attached to this colored filter substrate 260.
According to embodiments of the invention because the sidewall of this organic material patterned layer of the opening part of this saw-tooth like pattern and should predetermined material surface between, form the angle of a predetermined angular.Because the cause of the angle of above-mentioned predetermined angular, thus follow-up panel to group technology in, when the opening of this saw-tooth like pattern was inserted sealing, air was overflowed along the profile of tilt (taper) easily, therefore can avoid producing the problem of sealing bubble.
Though the present invention discloses as above with a plurality of preferred embodiments; the wherein specific element and the example of technology are to be used to illustrate the present invention; for example, organic polymer layers and protective seam, so it is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention, when changing arbitrarily and retouching, for example; material between displacement thin-film transistor array base-plate and colored filter substrate, and use method for packing of the present invention.Therefore protection scope of the present invention is as the criterion when looking the accompanying Claim person of defining.
Claims (20)
1. the formation method of the sealing region pattern of a display device comprises the following steps:
Second substrate that first substrate is provided and corresponds to first substrate;
Form predetermined material layer on this first substrate;
Form organic patterns of material layer on this predetermined material layer, it has the opening of a saw-tooth like pattern and exposes this predetermined material layer, and the sidewall of this organic material patterned layer of the opening part of this saw-tooth like pattern with should predetermined material surface between the angle of formation predetermined angular; And
Place predetermined sealing in this zigzag opening or on second substrate of corresponding zigzag aperture position, with this first substrate attachment in this second substrate.
2. formation method as claimed in claim 1, wherein this predetermined angular is less than 60 degree.
3. formation method as claimed in claim 1, wherein this predetermined angular is between 20 to 30 degree.
4. formation method as claimed in claim 1 should predetermined material layer be a protective seam wherein.
5. formation method as claimed in claim 1 should predetermined material layer be a metal electrode layer wherein.
6. formation method as claimed in claim 1, the wherein formation of this organic material patterned layer comprises:
Form organic material layer on this predetermined material layer; And
This organic material layer of patterning is to form the opening of this saw-tooth like pattern therein;
Wherein, it is adjacent with the opening of this saw-tooth like pattern that this organic material patterned layer has a plurality of parts, and the thickness of these a plurality of parts can be along with the thickening away from the opening of this saw-tooth like pattern.
7. formation method as claimed in claim 6, wherein this organic material patterned layer forms by a semi-transparent mask, GTG photomask or palisade photomask.
8. formation method as claimed in claim 6, wherein this organic material layer comprises polymethylmethacrylate or methyl nitrogen silicon compound.
9. display device, second substrate that comprises first substrate and correspond to first substrate, and in order to encapsulate the sealing region of this first substrate and second substrate, this sealing region comprises:
Predetermined material layer is formed on this first substrate;
Organic material layer, be formed on this predetermined material layer, and this organic material layer has the opening of saw-tooth like pattern, expose the material layer that to be scheduled to of this organic material layer below, and the sidewall of the organic material patterned layer of the opening part of this saw-tooth like pattern and should predetermined material surface between, form the angle of predetermined angular; And
Predetermined sealing is positioned in this zigzag opening, with this first substrate attachment in this second substrate.
10. the sealing region of display device as claimed in claim 9, wherein this predetermined angular is less than 60 degree.
11. the sealing region of display device as claimed in claim 9, wherein angle that should be predetermined is between 20 to 30 degree.
12. the sealing region of display device as claimed in claim 9 should predetermined material layer be a protective seam wherein.
13. the sealing region of display device as claimed in claim 9 should predetermined material layer be a metal electrode layer wherein.
14. the sealing region of display device as claimed in claim 9, wherein this organic material layer comprises polymethylmethacrylate or contains methyl nitrogen silicon compound.
15. a display device comprises sealing region, the pattern of this sealing region comprises:
The opening of saw-tooth like pattern, be arranged in the organic material layer on first substrate, expose the predetermined material layer of this organic material layer below, and the sidewall of this organic material patterned layer of the opening part of this saw-tooth like pattern and should predetermined material surface between, form the angle of predetermined angular; And
Predetermined sealing is positioned in this zigzag opening, to be formed for adhering to the sealing region of second substrate.
16. the pattern of sealing region as claimed in claim 15, wherein this predetermined angular is less than 60 degree.
17. the pattern of sealing region as claimed in claim 15, wherein this predetermined angular is situated between between 20 to 30 degree.
18. the pattern of sealing region as claimed in claim 15 should predetermined material layer be a protective seam wherein.
19. the pattern of sealing region as claimed in claim 15 should predetermined material layer be a metal electrode layer wherein.
20. the pattern of sealing region as claimed in claim 15, wherein this organic material layer comprises polymethylmethacrylate or methyl nitrogen silicon compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100848543A CN100371806C (en) | 2005-07-19 | 2005-07-19 | Display device sealing region pattern and its forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100848543A CN100371806C (en) | 2005-07-19 | 2005-07-19 | Display device sealing region pattern and its forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1719322A CN1719322A (en) | 2006-01-11 |
| CN100371806C true CN100371806C (en) | 2008-02-27 |
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| CNB2005100848543A Active CN100371806C (en) | 2005-07-19 | 2005-07-19 | Display device sealing region pattern and its forming method |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130017898A (en) * | 2011-08-12 | 2013-02-20 | 엘지이노텍 주식회사 | Touch window |
| CN102854667B (en) * | 2012-09-20 | 2017-05-17 | 京东方科技集团股份有限公司 | Liquid crystal device and manufacture method thereof |
| CN107039485A (en) | 2016-02-03 | 2017-08-11 | 昆山工研院新型平板显示技术中心有限公司 | A kind of pixel arrangement structure, evaporation mask plate and special-shaped display screen body |
| CN109599483B (en) * | 2018-12-05 | 2022-07-08 | 业成科技（成都）有限公司 | Piezoelectric ceramic device and method for forming the same |
| CN111261025A (en) * | 2020-01-19 | 2020-06-09 | 业成科技（成都）有限公司 | Display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889569A (en) * | 1995-02-24 | 1999-03-30 | Nec Corporation | Device used for liquid crystal display |
| JP2001174831A (en) * | 1999-12-21 | 2001-06-29 | Sony Corp | Liquid crystal display device |
| JP2003202577A (en) * | 2001-12-28 | 2003-07-18 | Sharp Corp | Liquid crystal display device |
| CN1578546A (en) * | 2003-06-27 | 2005-02-09 | 株式会社半导体能源研究所 | Display device and method of manufacturing thereof |
| US6861297B2 (en) * | 1999-12-17 | 2005-03-01 | Lg. Philips Lcd Co., Ltd. | Method of making a liquid crystal device |
| US6894737B2 (en) * | 2000-05-18 | 2005-05-17 | Lg. Philips Lcd Co., Ltd. | Liquid crystal display device having improved seal pattern and method of fabricating the same |
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2005
- 2005-07-19 CN CNB2005100848543A patent/CN100371806C/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889569A (en) * | 1995-02-24 | 1999-03-30 | Nec Corporation | Device used for liquid crystal display |
| US6861297B2 (en) * | 1999-12-17 | 2005-03-01 | Lg. Philips Lcd Co., Ltd. | Method of making a liquid crystal device |
| JP2001174831A (en) * | 1999-12-21 | 2001-06-29 | Sony Corp | Liquid crystal display device |
| US6894737B2 (en) * | 2000-05-18 | 2005-05-17 | Lg. Philips Lcd Co., Ltd. | Liquid crystal display device having improved seal pattern and method of fabricating the same |
| JP2003202577A (en) * | 2001-12-28 | 2003-07-18 | Sharp Corp | Liquid crystal display device |
| CN1578546A (en) * | 2003-06-27 | 2005-02-09 | 株式会社半导体能源研究所 | Display device and method of manufacturing thereof |
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Effective date of registration: 20240205 Address after: 825 Watercreek Avenue, Allen, Texas, USA, Unit 250 Patentee after: Optoelectronic Science Co.,Ltd. Country or region after: U.S.A. Address before: Hsinchu City, Taiwan, China Patentee before: AU OPTRONICS Corp. Country or region before: China |
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