CN100371741C - Method and system for high speed laser directly writing of diffraction light change image - Google Patents
Method and system for high speed laser directly writing of diffraction light change image Download PDFInfo
- Publication number
- CN100371741C CN100371741C CNB2005100957752A CN200510095775A CN100371741C CN 100371741 C CN100371741 C CN 100371741C CN B2005100957752 A CNB2005100957752 A CN B2005100957752A CN 200510095775 A CN200510095775 A CN 200510095775A CN 100371741 C CN100371741 C CN 100371741C
- Authority
- CN
- China
- Prior art keywords
- laser
- light
- image
- optical
- beam splitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The present invention discloses a diffracted light image changing high speed laser write through method. Incidence parallel lights pass through diaphragm and a lens and image on a beam splitting element, beam-slitting lights respectively pass through a lens assembly and converge to generate an interference fringe optical field, and interference fringes of different orientations are photoengraved successively to form micro grating images of different orientations. The present invention is characterized in that a solid state ultraviolet laser pumped by a semiconductor generates the laser beams; the present invention uses TTL signal control to realize the pulse output of the laser beams; two groups of the beam-slitting laser beams have zero optical path difference; an optical system and a photoresist dry plate move respectively on two perpendicular one-dimensional directions; photolithography is carried out in a continual motion and continual pulse exposing mode. In this way, the present invention realizes high speed laser photolithography system and ensures that the original edition manufacturing of large areas of diffracted light images with micron fringe structure is shortened between a plurality of hours and seventeen hours. The present invention goes into the stage of industrial application in a real sense and is an important breakthrough of digitalization advanced manufacturing technique in the laser holographic technical field.
Description
Technical field
The present invention relates to a kind of high speed method for making and system thereof of diffraction light change image, be used to make diffraction light change image and other have the image and the device of optically-variable characteristic.
Background technology
Diffraction light change image (Diffraction Optical Variable Image Device, DOVID) have three-dimensional or behavioral characteristics, include the micron order striped in each picture element, striped combination can formation 3D, dynamic image, under white light, the light chromatic dispersion is become the rainbow color, form color change and change of shape.The method of making the diffraction optics variable image learns a skill as advanced optical, is widely used in the making of false proof physical supports such as currency, visa, ID card, topsecret papers and various wrappage.From the suitability for industrialized production angle, the production of micrometer structure need be undertaken by the method for moulding replication, promptly at first diffraction light change image is recorded on the mother matrix, forms the relief type structure; Make metallograph again; By the mold pressing compacting, realize producing in batches at last.And technical difficult points is the design and the making of mother matrix.
At present, be used for diffraction light change image (mother matrix) false proof and packing and mainly be method for making by Optical Variable Imaging and photo-composing system thereof (referring to Chinese invention patent, publication number CN1350211A), the method for making of digital 3 D and light variation image and photo-composing system thereof (referring to Chinese invention patent, publication number CN1350212A) are made.The essential record medium that it adopts is the photoresist dry plate.
The sensitization sensitive area of photoresist dry plate is royal purple light or ultraviolet light, and characteristics are can form the relief type structure after exposing, and are convenient to follow-up industrialization and duplicate and produce, and shortcoming is the low (10mJ/cm of luminous sensitivity
2).In contrast to this, when making the planographic image, the important numbers output device of employing is a laser photocomposing system, and its recording materials have adopted silver salt type recording film, luminous sensitivity height (several μ J/cm
2), can support high speed sensitization to low power laser, therefore, laser photocomposing system is than the plane picture plate-making output that is easier to realize the high speed large format.Usually, in holographic optics, when recording materials are the silver salt dry plate, adopt He-Ne laser instrument (632.8nm), when recording materials are the photoresist dry plate, mainly adopt argon ion (Ar as interfering light source
+) laser instrument (457.9nm, 448.0nm) and the royal purple wavelength of helium cadmium (He-Cd) laser instrument (441.6nm) be used to interfere record, these three kinds of laser instruments all belong to the gaseous state type, output continuous wave (Continuous wave, laser instrument CW), common characteristic is that beam mode is good: TEM
00Mould, the monochromaticity height has long coherent length (20 centimetres to several meters long) and good optical quality: M
2～1.0, linear polarization＞100: 1.
In real system, the stability and the laser instrument cost performance of the transverse mode of the coherence of laser instrument, light beam, light beam output when considering beam interference, the laser instrument that is used for the making of an array holographic (dot-matrix hologram) or Optical Variable Imaging (DOVID) both at home and abroad is helium cadmium (He-Cd) laser instrument, output wavelength 441.6nm, light beam are TEM
00Mould.According to the difference of model, as the He-Cd laser instrument of common cadmium vapor, about light beam coherent length 100mm, peak power output is about 120mW; Mix the light beam coherent length 300mm of the He-Cd laser instrument of isotope cadmium, power reaches 180mW.In actual light path, because the luminous energy total losses reach 60% (reflection 3%, modulation 20%, transmission 17%, beam splitting 20% etc.), wherein only the optical energy loss of acousto-optic modulator just reaches about 20%, light beam with power 100mW is an example, on recording materials, be actually used in and interfere the luminous power of exposure to be about 40mW, consider the sensitivity～10mJ/cm of photoresist
2, be 1.5mm as beam diameter from laser instrument output, through after projection optical system miniature, the spot definition on the recording materials is 0.08mm, the power density on photoresist is 6.25 * 10
5(mW/cm
2), about 16 microseconds of time shutter.When photoetching, the displacement of photoresist dry plate should be less than 1/8 of fringe period, otherwise striped will blur, if fringe spatial frequency is 1000pairlines/mm, so, the amount of movement that the photoresist dry plate is allowed is 1/8 micron, allows in the interference system that the relative moving speed of photoresist dry plate should be less than 7.8mm/s, and this is the limiting velocity that adopts He-Cd laser fabrication light variation image etching system to be allowed.In fact, in order to guarantee the grating flute profile and the diffraction efficiency of grating of photoetching, generally need the increase time shutter to reach certain photoetching grooved degree of depth, real exposure time will be increased to the 40-80 microsecond, and relative moving speed should be less than 3.2mm/s.In order to improve the influence of unfavorable factors such as kinematic system mechanical stability and reduction mechanical vibration, on the movement control mode of real system, adopted droped beat towards control model, be distance back of kinetic control system operation earlier, suspend a time interval and make system stability, in time out, insert single exposure, enter operation exposure process next time then.Usually because serviceable life＜4000 of He-Cd laser instrument hour, use a period of time after, output power will drop to below 70% of index, like this, the travelling speed of real system drops to～2.0mm/s, actual photoetching speed is about 25 points/s.If with spot definition is the light variation image that 0.08mm comes photoetching 600mm * 800mm area, the time that needs was about more than 1 month.Therefore, adopt the diffraction light change image photoetching photo-composing system only actually of He-Cd laser instrument can make small size and (be not more than the diffraction image of 50mm * 50mm).In addition, the acousto-optic modulator that adopts in the photoetching photo-composing system (Acoustic opticalmodulator, AOM) used 1 order diffraction light as beam-switching, light beam has a fleet angle, make troubles for the Adjustment System light path, simultaneously, the transducer in the acousto-optic modulator causes light beam to become ellipse, influences beam quality.
The light variation image of above-mentioned size is normally used for the photoetching of trademark image; Or be spliced into the picture of large image scale version by the mode of image sets version, but its image is periodically to repeat.
If can solve the high speed of large tracts of land light variation image makes, the laser direct writing system of diffraction light change image is also as laser photocomposing system, has very wide industrial prospect, industries such as printing will increase a kind of novel three-dimensional and the plate-making technology of dynamic image and the manufacturing means that novel light becomes printing material, and image also will enter the epoch of 3D, mobilism and micrometer structure.
For addressing the above problem the method for consideration, the one, the sensitivity that improves recording materials.But up to the present, the material that is fit to is the photoresist dry plate, is difficult to further increase substantially the sensitivity of photoresist dry plate.
The 2nd, improve the laser utilization factor.Yet, from above-mentioned analysis as can be known, on the principle, even the efficiency of light energy utilization by the improvement system adopts the He-Cd laser instrument also can not make system can reach higher travelling speed.
Therefore, the main path that improves system's photoetching speed is to abandon using the traditional mode of He-Cd laser instrument, adopts the new pattern laser light source of higher laser power density, to shorten the time shutter, improve travelling speed, to improve the diffraction light change image production method.
We know, in the photography applications of pulse portrait holography, are that (694nm, Pulse Wave, ruddiness PW) are as light source, with highly sensitive (5-10 μ J/cm with solid-state ruby laser
2) ruddiness sensitizing silver salt dry plate as recording materials, this solid-state ruby laser coherent length can reach several meters.But the 694nm red light wavelength is to the not sensitization fully of photoresist dry plate.The Nd:YAG laser instrument that is used for industrial processes (as laser marking etc.), output wavelength 1060nm, average power can reach 50W, light beam pulsewidth～20ns, laser repetition pulse frequency 50kHz, through Nd:YAG laser output wavelength 532nm after the process of frequency multiplication, average power can reach 25W.Yet because the difference of purposes, laser marking, perforation processing tool need obtain sufficiently high power density, and therefore, the light beam of this class Nd:YAG laser instrument output is many transverse modes hot spot, and the light beam coherent length is extremely short, the poor (M of optical quality
2＜10), can not produce the interference optical field of enough quality.Simultaneously, the light of Nd:YAG laser instrument 1060nm and 532nm is very obvious in the thermal effect that the metal surface is added man-hour, mainly form high-energy-density, produce high temperature in the part and come ablator, belong to the hot-working category basically by focusing on, machining precision is limited, on the other hand, photoresist is not to the light sensation light of 1060nm and 532nm, therefore, the Nd:YAG laser instrument that is used for laser marking can not form high-quality micron order interference fringe, and the photoetching that more can not be used for the micron order striped is directly write.
Summary of the invention
The object of the invention provides a kind of method and system of at a high speed making diffraction light change image of being suitable for, and to change existing system the complicated of the kinematic system that causes that need pause, improves manufacturing speed, makes it to be suitable for the making of large format diffraction light change image.
For achieving the above object, the technical solution used in the present invention is: a kind of high speed laser directly write method of diffraction light change image, laser beam datum is become a parallel beam, the incident directional light is through diaphragm, lens imaging is to beam splitting element, be divided into two-beam, light beams was focused on the recording materials through lens combination respectively in described minute, produce the interference fringe light field at intersecting area, by the photoresist photographic plate recording, make optical system and the relative motion of photoresist dry plate, the interference fringe of photoetching different orientation will form the low-light grid image of different orientation successively, until the making of finishing whole diffraction light change image, by adopting semiconductor pumped solid-state ultraviolet laser to generate described laser beam, adopt the light source of the wavelength of frequency tripling 351nm/355nm or quadruple 263nm/266nm as system, outgoing laser beam satisfies single transverse mode TEM
00, optical quality M
2＜1.2, the requirement of coherent length＞0.1mm, linear polarization; Utilize the TTL signal controlling, realize the pulse output of laser beam, pulsed frequency 0-15kHz, described two component light beams have zero optical path difference; Described optical system and photoresist dry plate move on orthogonal two one dimension directions respectively, adopt continuous motion, continuous impulse Exposure mode to carry out photoetching.
Adopt the high speed laser directly one-writing system of the diffraction light change image of above-mentioned method for making, by the optical interference head, motion platform and control system constitute, described optical interference head comprises the Lights section, imaging system and spectral interference system before the beam splitting, include diaphragm in the imaging system before the described beam splitting, the spectral interference system includes beam splitting element and two-way quartz lens group, two-way beam split beam convergence is on the photoresist recording materials that place on the motion platform, described the Lights section is by ultraviolet source, collimating mirror group and the TTL power supply that can modulate are formed, ultraviolet source is for adopting semiconductor pumped solid-state ultraviolet laser, by optical fiber the laser crystal medium is carried out pumping by semiconductor laser, the interior frequency multiplication of an actor's rendering of an operatic tune of going forward side by side, output frequency tripling and quadruple, the pulsed frequency of described TTL power supply control laser beam; Described optical interference head is connected two the mutually perpendicular motion in one dimension of direction of motion mechanisms respectively with described motion platform, and control system is made of X-Y two-dimensional motion control device; Optical element in the described optical interference head adopts the fused silica glass material of ultraviolet light.
In the technique scheme, described " imaging system before the beam splitting " structure can be same as the prior art, looks the difference of the beam split mode of employing, comprises diaphragm, object lens, catoptron (with miniature lens).Described diaphragm can adopt the accent rectangular aperture or (Digital Micro-Mirror Device is DMD) as the diaphragm of importing directional light with the low-light catoptron.Described " diffraction light change image " is meant the image by the unit optical grating constitution, the orientation of unit grating wherein and empty frequency have infinite many combinations, make image have the optical characteristics that multiple light such as color change, dynamic effect and three-dimensional sense become effect, it comprises plane picture (2D), the longitudinal layered image in plane (2D/3D), three-dimensional image (3D), Optical Variable Imaging (OVD, or be called the spatial multichannel image), digital coding image (having bar code or two-dimension code function), numeral point shape encrypted image etc.Referring to the synoptic diagram of a kind of diffraction light change image shown in the accompanying drawing 1, the unit grating of same orientation and empty frequency is arranged in one or more squares, and entire image is combined by a plurality of such squares.When changing the observation place, can observe square frame line generation telescopic variation, provided the subimage on two different viewing angles among the figure, respectively by the identical unit optical grating constitution of orientation, the subgraph that any one Optical Variable Imaging all can be regarded as by several different grating orientations constitutes on each subimage.The optical convergence that described " spectral interference system " produces beam splitting forms interference fringe on the photoresist recording materials; Note the image by the unit optical grating constitution on photosensitive material, because the coherent length of pulsed laser is short, the spectral interference system should guarantee the zero optical path difference of light path.On system operation mode, take the pattern of kinematic system continuous motion, continuous impulse exposure simultaneously, forms of motion is circuitous line by line (Raster).
In the technique scheme, described beam splitting element comprises beam splitter and reflecting element, described beam splitter adopts two groups of right-angle prism gummeds to form, wherein one side is plated semi-transparent semi-reflecting multilayer dielectric film, export parallel to each other and two-beam that direction is opposite, adopt two right-angle prisms as the total internal reflection element, form equidirectional directional light.By adjusting two distances between the total internal reflection right-angle prism, above-mentioned interference type optical head can be realized zero optical path difference.Adjust the distance between this two prisms synchronously, can change the angle of the interference light that forms after the lens focus, reach the purpose that changes luminous point internal interference fringe spacing.The above-mentioned beam splitting element efficiency of light energy utilization is about 80%.
Second kind of scheme adopts raster beam-splitting, beam splitting element is made of many groups phase grating, the variation range of grating cycle d is 1 micron-20 microns, substrate is a fused quartz, if the grating flute profile is a rectangular distribution, the grooved degree of depth satisfies h=2 λ (n-1), here λ is the ultraviolet wavelength of use, n is the light refractive index of substrate, and like this, ± 1 grade of light gross energy can reach 80%.
Further technical scheme, the wavelength of described semiconductor pump laser is 800nm, the pulse laser wavelength that produces through the solid-state ultraviolet laser of pumping is frequency tripling 351nm/355nm or quadruple 263nm/266nm.
The present invention with the semiconductor pumped solid-state pulse laser of ultraviolet light output as light source, produce luminous point with micron, submicron order interference fringe by the interferometric optical head, utilize the output of the TTL signal controlling laser pulse of computing machine output, in the operation of controlled motion system, adopt the continuous impulse exposure mode, carrying out high-speed vector quantization photoetching on recording materials directly writes and makes diffraction light change image, and, make the making of large tracts of land diffraction light change image goods enter the industrial applications stage with this method for making realization high speed laser directly write photoetching system.
The present invention proposes to adopt semiconductor pumped solid-state ultraviolet laser (Diode-Pumped Solid State Laser first in the photoetching write-through system of diffraction light change image, DPSSL), use this semiconductor pumped frequency tripling (DPSSFTL:Diode-Pumped Solid State Frequency TripleLaser, frequency tripling: 351-355nm) and quadruple (DPSSFFL:Diode-Pumped Solid StateFrequency Fourth Laser, quadruple: 263nm/266mm) these two kinds of wavelength are as the light source of system, here frequency tripling, the semiconductor pumped solid-state ultraviolet laser of quadruple, adopt the semiconductor laser of 800nm the laser crystal medium to be carried out pumping, frequency multiplication in an actor's rendering of an operatic tune of going forward side by side by optical fiber.Output beam need have following characteristic: single transverse mode (TEM
00), optical quality M
2＜1.2, certain coherent length (＞0.1mm gives the suitable design of beam splitting system and adjusts distance), linear polarization (100: 1) can be passed through TTL signal controlling light beam pulse frequency simultaneously, can adjust the control bundle energy by electric current.
Use for the DPSSL that cooperates ultraviolet light output, optical element in the system also has strict performance requirement, single pulse energy output＞100J, pulse width 20ns-50ns, light beam is focused into 80 microns hot spot, and the power density of light beam reaches (＞0.78 * 10
8One 1.5 * 10
8W/cm
2), optical system should have the characteristic that sees through of good ultraviolet light, and light-splitting device should be able to bear the luminous energy of high power density and impact; Because the coherent length of pulsed laser is short, the spectral interference system should guarantee the zero optical path difference of light path; Use the fused silica glass material of ultraviolet light to make custom-designed interferometric optical head.
For above-mentioned pulse width, make kinematic system under less than the operation of the speed of 6m/s, satisfy the requirement of in time shutter system's displacement＜1/8 micron, therefore, adopt the photoetching write-through system of DPSSL to have high speed characteristics.Separate mode is adopted in the two-dimensional motion control of system, first of LASER Light Source and interferometric optical as motion in one dimension (directions X), another ties up platform motion (Y direction), the bidimensional self-movement, like this, the area of the motion platform of overall optical etching system drops to 1/4 of the area that adopts fixed optics head+XY bidimensional platform mode.Owing in semiconductor pumped solid-state laser, adopted the TTL interface, by the control signal that computing machine sends, directly control the output of laser pulse, like this, save acousto-optic modulator in the system, make that the collimation of optical system is easier.
Under above-mentioned beam characteristics, system will adopt the photoetching control mode of operation continuously, continuous impulse exposure, kinematic system is not suspended between exposure period, like this, promoted the travelling speed of system greatly, form a kind of high speed and made the method for diffraction optics variable image, can support the making of large format diffraction light change image fully.
Because the technique scheme utilization, the present invention compared with prior art has following advantage:
The present invention with DPSSL frequency tripling, laser of quadruple wavelength applications in directly writing with the photoetching of micron order light variation image, because pulse width is about 20ns, during writing down, move distance is less than 1/8 fringe period, and the travelling speed of system can reach 6.25m/s like this.With the operation less than this speed, the interference fringe diffraction efficiency of photoetching will not influenced by movement velocity.Therefore, the mode that system makes diffraction light change image no longer is operation-pause-exposure mode, but the circuitous progressive scan mode operation of system not stop continuously simultaneously, carried out the pulse exposure continuously by computing machine output data control signal.The output frequency of gating pulse can be controlled the distance between the photoetching interference fringe point.
In the above described manner, we calculate under different resolution, different travelling speed, the time of the diffraction image of 600mm * 800mm area is directly write in system's photoetching: as spot definition is 80 microns (image resolution ratios that are equivalent to 317dpi), travelling speed 6.25m/s (can adopt linear electric motors), about 16 minutes of time; Travelling speed 0.5m/s, about 3.33 hours of time, if travelling speed drops to 0.05m/s (employing servomotor), spot definition is increased to 0.16mm (image resolution ratio that is equivalent to 158dpi), and then about 16.6 hours of time is directly write in photoetching.With respect to the required time more than 1 month of diffraction light change image photoetching photo-composing system photoetching equal area of adopting the He-Cd laser instrument as light source, the realization of the production method of above-mentioned diffraction image is a huge technical progress.
2. because in the mechanical movement process, operational system is vibrated inevitably, especially the vibration perpendicular to interfering beam will cause the overlapping region of two light beams to descend.The ultraviolet light beam wavelength is shorter, reduces through the beam diffraction angle behind the raster beam-splitting, helps improving the overlapping quality of luminous point.As 500line pairs/mm phase grating 351nm ± the 1 order diffraction angle of cut is 20 degree, and is 25.5 degree at the angle of cut of 441.6nm.Because the platform that mechanical motion produces vibration will cause two luminous point degrees of overlapping to descend, usually, lap can not be greater than 30% interfering time point in permission, if the minimum spot size of system is 40 microns, like this, the 351nm ultraviolet light allows amplitude ± 34 micron of mechanical vibration, the blue light 441.6nm of He-Cd laser instrument, allowing the mechanical vibration amplitude is ± 29 microns.Thereby ultraviolet light more helps the high-speed cruising of back-up system, has reduced the requirement on machining accuracy of kinematic system simultaneously.
3. behind the employing ultraviolet light, the beam angle that produces same micron striped diminishes, lens for same angular aperture, imaging len can be collected the more beam splitting light of wide-angle, when the angle of the light on recording materials reaches 40 when spending, to form the interference optical field of sub-micron (0.5 micron fringe period), form light variation image with zero order light modulation characteristics.This is the function that adopts He-Cd laser instrument 441.6nm to realize.
4. adopt the TTL signal directly to control the pulse output of laser instrument, system saves acousto-optic modulator, helps the convenience of light path adjustment and the raising of the efficiency of light energy utilization.
5. because the size of DPSSL is less, can adopt the flying optical head mode, move with kinetic control system, system adopts optical head and platform to move separate mode, reduced the area of kinetic control system in the whole photoetching write-through system, help the manufacturing of high-precise motion control system, be convenient to the realization of large format photoetching.With respect to the He-Cd laser instrument,, can only fixedly mount and adopt the mode of fixed optics head because volume is very big;
6. other advantages behind the employing DPSSL light source are, the power output of DPSSL can be adjusted, and the photolithographic exposure amount can be adjusted by the size of electric current, and the pulse width of laser remains unchanged, help accurate control exposure, improve the quality of interference fringe and the travelling speed of system.The He-Cd laser instrument can not be adjusted the light beam output power, and the adjustment of exposure is to realize by the pulsed modulation width that AOM changes light beam, and the prolongation of time shutter will require the dead time of kinetic control system to increase, and influence travelling speed.
7. the photoresist dry plate is high more than 5 times for blue light (441.6nm) for the remolding sensitivity of ultraviolet light (as 351nm), help selecting for use the lower ultraviolet laser of average power or, improve the ratio of performance to price of system or the serviceable life of prolongation laser instrument with lower power operation.Can reach 20,000 hours the average length of working life of DPSSL, the mission life of He-Cd laser instrument 4,000 hours, and both costs are suitable, mission life improves more than 5 times.
8. because the laser thermal effect that the Ultra-Violet Laser wavelength has is little, beam splitter, the lens that adopt quartz material to make help using the laser beam of bigger average power, directly in other non-photosensitive material photomask surface interference fringes.
From above-mentioned advantage explanation as can be known, adopt the diffraction light change image photoetching write-through system of DPSSL, not only realized high-speed cruising, simultaneously, radical change the production method of image, improved the stability of fabricating quality, make and realize becoming a reality of large tracts of land light variation image, thereby the invention provides better, the method for making of diffraction light change image more easily, be the major technological breakthrough in laser interference lithography field.
Description of drawings
The synoptic diagram that accompanying drawing 1 is separated for diffraction light change image unit grating orientation and empty frequency division among the present invention;
Accompanying drawing 2 is the structural representation of interfere type optical head in the embodiment of the invention one;
Accompanying drawing 3 is the structural representation of photoetching write-through system in the embodiment of the invention one;
Accompanying drawing 4 is the synoptic diagram of the method for operation (dot matrix rainbow grating) of photoetching write-through system in the embodiment of the invention one and the example two;
Accompanying drawing 5 is the structural representation of photoetching write-through system in the embodiment of the invention two;
Accompanying drawing 6 is the structural representation of interfere type optical head in the embodiment of the invention two;
Accompanying drawing 7 is the synoptic diagram of the method for operation (light beam effect) of the change striped orientation of photoetching write-through system in the embodiment of the invention one and the example two;
Accompanying drawing 8 is the structural representation of photoetching write-through system in the embodiment of the invention four;
Accompanying drawing 9 is the synoptic diagram that middle photoetching write-through system changes striped orientation and input information in the embodiment of the invention one and the example two in square luminous point;
Wherein: [1], LASER Light Source; [2], beam expander and collimating mirror; [3], iris; [4], lens; [5], catoptron; [6], semi-transparent semi-reflecting beam splitter; [7], prism mirror; [8], imaging lens group; [9], high speed turntable; [10], tangential movement system; [11], recording materials; [12], worktable; [13], power supply; [14], [15], kinetic control system; [16], computing machine; [17], lens; [18], beam splitting element; [19], micro-reflector.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one: shown in accompanying drawing 2-4, a kind of method for making of diffraction light change image, convert image distribution to pulse control signal, according to wherein the orientation and the empty frequency of unit grating are adjusted beam splitting element (6 synchronously, turning to 7), carry out interferometric optical head and platform motion, beam splitting element high speed rotating and light pulse input, the continuous impulse exposure on recording materials of making a circulation line by line simultaneously, platform, interferometric optical head, beam splitting element need not to suspend during exposure, until the making of finishing entire image.The method of operation of system is referring to Fig. 4.
Realize the laser lithography straight-writing system of said method, comprise by DPSSL LASER Light Source 1, beam expander and collimating mirror 2, iris 3, lens 4, catoptron 5 and the lens combination 8 of ultraviolet light output and form the 4F system jointly, rectangular aperture is become a reduced image on recording materials 11 surfaces with TTL signaling interface.Because the position of beam splitting element is irrelevant with the shape of final luminous point, so beam splitting element is as far as possible near lens 4, so that the light beam bundle spot on semi-transparent semi-reflecting beam splitter 6 is bigger.By 7 reflections of two prisms catoptron,, the directional light after the beam splitting is focused on the recording materials 11 after the beam splitting by imaging lens group 8.The above-mentioned interfere type optical head that constitutes by LASER Light Source, beam splitting element, imaging system, be assemblied in the directions X tangential movement system 10, on the worktable 12 that is placed on the motion of Y direction of recording materials 11, and the power supply 13, kinetic control system 14,15 and the computing machine 16 that comprise TTL and power control.Described iris can become rectangle with light beam, and described beam splitter 6,7 is placed on the high speed turntable 9, and high speed turntable 9 can rotate, described recording materials 11 be placed on the worktable 12 and be positioned at beam splitting after on the focal plane of imaging system; Described kinetic control system adopts linear electric machine or servomotor.Accompanying drawing 3 is synoptic diagram of whole high speed photoetching write-through system.
In the present embodiment, intersecting the luminous point size generally changes between 0.005 milli comes at 10 millimeters, the shape that intersects luminous point can be a round dot, square, to beam splitting element adjustment crossing light angle is changed between 5 ° to 40 °, and recording materials 11 can be to blue light sensitization to black light.
Embodiment two: shown in accompanying drawing 5 and accompanying drawing 6, a kind of photoetching write-through system that is used to make digital diffraction light change image, comprise by LASER Light Source 1, beam expander and collimating mirror 2, variable rectangular diaphragm 3, imaging system (lens f1 before the beam splitting, f2 and diaphragm constitute the 4F system of miniature function), the light path system that imaging system is formed after the beam splitting (comprises beam splitting element 18, imaging lens group 8, high speed turntable 9), above-mentioned by light source, imaging system before the beam splitting, the interfere type optical head that imaging system constitutes after the beam splitting, be assemblied in the directions X tangential movement system 10, on the worktable 12 that is placed on the motion of Y direction of recording materials 11, and the power supply 13 that comprises TTL and power control, kinetic control system 14,15 and computing machine 16.
Described light source 1 can be a ultraviolet output pulsed laser light source; Described rectangular aperture can be regulated.Described beam splitting element 18 is quartzy phase grating, is placed on the turntable 9, and turntable 9 can rotate selects different phase gratings, thereby changes the angle of interfering; Described recording materials 11 be placed on the worktable 12 and be positioned at beam splitting after on the focal plane of imaging system; Imaging system comprises lens 4, catoptron 5 and lens 17 before the described beam splitting, and imaging system is focused at diffraction light on the recording materials 11 after the described beam splitting, can be to close the bundle image device by what two groups of lens constituted.
In the present embodiment, in crossing luminous point (20-160 micron) microtexture can also be arranged, minimal structure can reach 2-5 micron size.
Example three: a kind of method for making of diffraction light change image, earlier image is resolved into different subimages by the orientation of interference fringe, respectively each subimage is moved exposure continuously, between the subimage exposure period, grating in the optical head need not rotation, only carrying out need rotating beam-splitting optical grating when subimage switches, this production method has been avoided the rotation of wide-angle between continuous operating period, has improved the continuity of photolithographic operation and the fabricating quality of diffraction light change image.
The laser direct writing system of present embodiment, general structure is identical with embodiment one.
Embodiment four: shown in accompanying drawing 8, a kind of photoetching write-through system that is used to make digital diffraction light change image, comprise by LASER Light Source 1, beam expander and collimating mirror 2, reflective slms---micro-reflector 3, imaging system (lens f1 before the beam splitting, f2 and iris constitute the 4F system of miniature function), the light path system that imaging system is formed after the beam splitting (comprises beam splitting element 18, imaging lens group 8, rotating mechanism 9), above-mentioned by light source, imaging system before the beam splitting, the interference capability optical head that imaging system constitutes after the beam splitting, be assemblied in the directions X tangential movement system 10, on the worktable 12 that is placed on the motion of Y direction of recording materials 11, and the power supply 13 that comprises TTL and power control, kinetic control system 14,15 and computing machine 16.
Described light source 1 can be a ultraviolet output pulsed laser light source; (Digital Micro-Mirror Device DMD), can bear the power density of UV laser beam to the micro-reflector that described spatial light modulator 3 is a reflection-type.Described beam splitting element 18 is quartzy phase grating, is placed on the turntable 9, and turntable 9 can rotate selects different phase gratings, thereby changes the angle of interfering; Described recording materials 11 be placed on the worktable 12 and be positioned at beam splitting after on the focal plane of imaging system; Imaging system comprises lens 4, catoptron 5 and lens 17 before the described beam splitting, and imaging system is focused at diffraction light on the recording materials 11 after the described beam splitting, can be to close the bundle image device by what two groups of lens constituted.
In the present embodiment, in crossing luminous point (20-160 micron) microtexture can also be arranged, minimal structure can reach 2-5 micron size.
Embodiment five: on the basis of embodiment four, in the continuous impulse exposure,, the light spot form that is imaged on the recording materials is carried out real time altering by the signal modulation of DMD, the shape of luminous point can be any geometric configuration, also literal or coded image.Can constitute high speed photoetching thus and directly write diffraction light change image with large information capacity.
The laser direct writing system of present embodiment, general structure is identical with embodiment four.
Embodiment six: on the basis of embodiment five, input speckle microstructure on DMD, beam splitting element is rotated to blank space, not beam split of laser beam like this, directly see through imaging lens group, on recording materials, the dimension of this microstructure is at the 2-5 micron to the little knot micropatterning of speckle, change the distribution of microstructure graph, the diffraction light change image after photoetching is directly write has low chromatic dispersion or the diffusing characteristics of colour killing.
The laser direct writing system of present embodiment, general structure is identical with embodiment four.
Embodiment seven: on the basis of embodiment two, with after the beam splitting element beam splitting ± 1 order diffraction light and zero order light shelves fall, allow ± 2 grades of light transmissions, if the spatial frequency of phase grating is 500line pairs/mm, then form the sub-micron interference fringe in 0.5 micron cycle on recording materials, the image of Xing Chenging has the characteristics of bigger chromatic dispersion and zero order light modulation thus.Equally, only allow zero order light and+1 grade of interference of light, the light variation image of formation has moderate chromatic dispersion.
The laser direct writing system of present embodiment, general structure is identical with embodiment two.
Embodiment eight: on the basis of embodiment two, iris is reached minimum, beam splitting element rotates to blank space, not beam split of laser beam directly sees through imaging lens group, and the luminous point on the recording materials is focused on about the 1-5 micron, improve the repetition frequency of pulse laser, can carry out the two-dimensional vector figure and directly write, said system becomes the precise laser straight-writing system of single beam, can carry out the photoetching of precision circuit plate, mask.
The laser direct writing system of present embodiment, general structure is identical with embodiment two, and quartz lens f3 adopts shorter focal length (microscope that numerical aperture is higher).
Embodiment nine: on the basis of embodiment one, adopt the bigger ultraviolet output DPSSL of average power, UV laser beam as 3-5W, through beam splitting and lens combination imaging, the interference light point focusing is to the 40-80 micron, formation on material is enough to make the power density of material gasification, because ultraviolet light is on the spectral absorption peak of material, when photoetching is directly write, the thermal effect of material is very low, like this, can adopt low-melting plastic material directly to write down the light variation image of micrometer structure, if power is higher, but direct-write photoetching on the material that then fusing point is higher.
The laser direct writing system of present embodiment, general structure is identical with embodiment one.
Claims (1)
1. the high speed laser directly write method of a diffraction light change image is characterized in that:
Laser beam is collimated into a parallel beam through the collimating mirror group, incident parallel beam process diaphragm, lens imaging are to beam splitting element, be divided into two-beam, light beams was focused on the recording materials through the quartz lens group respectively in described minute, produce the interference fringe light field at intersecting area,, make optical interference head and the relative motion of photoresist dry plate by the photoresist photographic plate recording, the interference fringe of photoetching different orientation will form the low-light grid image of different orientation successively, until the making of finishing whole diffraction light change image;
Wherein, described optical interference head comprises the Lights section, the preceding imaging system of beam splitting and spectral interference system, include diaphragm in the imaging system before the described beam splitting, described spectral interference system includes beam splitting element and two-way quartz lens group, and described the Lights section is made up of ultraviolet source, collimating mirror group and the TTL power supply that can modulate;
By adopting semiconductor pumped solid-state ultraviolet laser is that described ultraviolet source generates described laser beam, adopts the wavelength of the wavelength of frequency tripling 351nm/355nm or quadruple 263nm/266nm as light source, and outgoing laser beam satisfies single transverse mode TEM
00, optical quality M
2＜1.2, the requirement of coherent length＞0.1mm, linear polarization; Utilize the pulsed frequency of described TTL power supply control laser beam of modulating, realize the pulse output of laser beam, pulsed frequency 0-15kHz;
Described two component light beams have zero optical path difference; Described optical interference head and photoresist dry plate move on orthogonal two one dimension directions respectively, adopt continuous motion, continuous impulse Exposure mode to carry out photoetching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100957752A CN100371741C (en) | 2005-11-17 | 2005-11-17 | Method and system for high speed laser directly writing of diffraction light change image |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100957752A CN100371741C (en) | 2005-11-17 | 2005-11-17 | Method and system for high speed laser directly writing of diffraction light change image |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1786748A CN1786748A (en) | 2006-06-14 |
| CN100371741C true CN100371741C (en) | 2008-02-27 |
Family
ID=36784280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100957752A Active CN100371741C (en) | 2005-11-17 | 2005-11-17 | Method and system for high speed laser directly writing of diffraction light change image |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100371741C (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916042A (en) * | 2010-07-23 | 2010-12-15 | 长春理工大学 | Multi-beam semiconductor laser interference nanoimprinting technology and system |
| CN101975976B (en) * | 2010-08-30 | 2015-03-04 | 北京工业大学 | Photonic crystal micro-nano structure direct-writing method based on metal nanoparticles |
| CN102602127B (en) * | 2012-03-09 | 2014-04-09 | 方平 | Blue-violet laser carving system and engraving method thereof |
| CN103424996B (en) * | 2013-09-03 | 2016-03-02 | 苏州大学 | A kind of optical machining system and method |
| CN103729673B (en) * | 2014-01-28 | 2017-01-04 | 苏州大学 | A kind of three-dimension code and preparation method thereof |
| US10054859B2 (en) | 2016-01-06 | 2018-08-21 | Soochow University | Real-time variable parameter micro-nano optical field modulation system and interference lithography system |
| CN109031632B (en) * | 2017-06-12 | 2021-02-02 | 中国航空制造技术研究院 | Portable multispectral long-focus collimator and device thereof |
| CN107984879B (en) * | 2017-11-27 | 2019-10-25 | 中国印刷科学技术研究院有限公司 | A kind of drum type platemaking machine imaging size control method |
| CN108649092A (en) * | 2018-06-28 | 2018-10-12 | 华侨大学 | A kind of concentrating solar battery of integrated fractal ring |
| CN109445253B (en) * | 2018-12-25 | 2021-03-05 | 合肥芯碁微电子装备股份有限公司 | Rapid scanning exposure method based on DMD leveling state |
| CN110187424B (en) * | 2019-05-05 | 2021-06-01 | 中国科学院上海光学精密机械研究所 | Picometer smooth comb, manufacturing device and manufacturing method thereof |
| CN111708257B (en) * | 2020-07-06 | 2021-09-03 | 吉林大学 | Holographic raster scanning photoetching exposure monitoring and controlling method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1168981A (en) * | 1996-06-19 | 1997-12-31 | 南京大学 | Method for mfg. gratings on the surface of ultraviolet adsorption material, and the products thereof |
| US6268893B1 (en) * | 1996-03-11 | 2001-07-31 | American Bank Note Holographics | Method and apparatus for a fringe direct writing system |
| CN1151410C (en) * | 2001-11-07 | 2004-05-26 | 苏州苏大维格数码光学有限公司 | Digital 3D optical variable image making process and laser photocomposition system |
| US20040146076A1 (en) * | 2003-01-24 | 2004-07-29 | Dudley David R. | Diode pumped laser with intracavity harmonics |
| CN1182445C (en) * | 2001-10-29 | 2004-12-29 | 苏州大学 | Optical variable image making method and its photocomposition system |
-
2005
- 2005-11-17 CN CNB2005100957752A patent/CN100371741C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268893B1 (en) * | 1996-03-11 | 2001-07-31 | American Bank Note Holographics | Method and apparatus for a fringe direct writing system |
| CN1168981A (en) * | 1996-06-19 | 1997-12-31 | 南京大学 | Method for mfg. gratings on the surface of ultraviolet adsorption material, and the products thereof |
| CN1182445C (en) * | 2001-10-29 | 2004-12-29 | 苏州大学 | Optical variable image making method and its photocomposition system |
| CN1151410C (en) * | 2001-11-07 | 2004-05-26 | 苏州苏大维格数码光学有限公司 | Digital 3D optical variable image making process and laser photocomposition system |
| US20040146076A1 (en) * | 2003-01-24 | 2004-07-29 | Dudley David R. | Diode pumped laser with intracavity harmonics |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1786748A (en) | 2006-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100371741C (en) | Method and system for high speed laser directly writing of diffraction light change image | |
| JP4716663B2 (en) | Laser processing apparatus, laser processing method, and structure manufactured by the processing apparatus or processing method | |
| CN100495215C (en) | Method and device for light etching micrometer structure of smooth surface | |
| CN106406061B (en) | Method for manufacturing volume holographic element | |
| EP1666926B1 (en) | Apparatus for applying optical gradient forces | |
| US7123340B2 (en) | Lithograph with moving lens and method of producing digital holograms in a storage medium | |
| WO2008109618A9 (en) | System and method for making seamless holograms, optically variable devices and embossing substrates | |
| CN110703577B (en) | Preparation method of super-surface color hologram and optical system | |
| US7492442B2 (en) | Adjustable resolution interferometric lithography system | |
| CN108983555B (en) | Processing method for improving three-dimensional micro-nano structure based on composite scanning | |
| CN109343162A (en) | Laser direct-writing device and its laser direct writing method based on super lens | |
| Poleshchuk et al. | Laser writing systems and technologies for fabrication of binary and continuous relief diffractive optical elements | |
| CN100349024C (en) | Method and apparatus for laser directly writing of micro-light variation image | |
| US5640257A (en) | Apparatus and method for the manufacture of high uniformity total internal reflection holograms | |
| Choi et al. | Interferometric inscription of surface relief gratings on optical fiber using azo polymer film | |
| CN1151410C (en) | Digital 3D optical variable image making process and laser photocomposition system | |
| CN209224557U (en) | Light-cured type 3D printing equipment and its image exposing system | |
| CN108710268A (en) | A kind of parallel lithography system and method based on two-photon polymerized exposure | |
| US20070258119A1 (en) | Optical Device, an Optical System and a Method of Manufacturing a Holographic Optical Element | |
| WO2006003457A1 (en) | An optical device, an optical system and a method of manufacturing a holographic optical element | |
| US3619023A (en) | Optical element for generating contour stripes | |
| CN217493057U (en) | Quick scanning type nanoscale three-dimensional laser processing device | |
| CN114918532B (en) | Rapid scanning type nanoscale three-dimensional laser processing device and method | |
| CN110119071A (en) | Interference lithography system, printing equipment and interference photoetching method | |
| Livingstone et al. | Development of micro/nano structure pattern generation using direct-beam interferometry |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 1, ten Zi street, Canglang District, Suzhou City, Jiangsu Province, zip code: 215006 Co-patentee after: SVG Optronics, Co., Ltd. Patentee after: Soochow University Address before: 1, ten Zi street, Canglang District, Suzhou City, Jiangsu Province, zip code: 215006 Co-patentee before: Suda Weige Digital Optics Co., Ltd., Suzhou Patentee before: Soochow University |
|
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: Suzhou, Jiangsu province Suzhou Industrial Park, Su Hong Road, North Bell Street, No. 478 Patentee after: SVG Optronics, Co., Ltd. Address before: International Science and Technology Park, No. 328 Airport Road, Suzhou Industrial Park, Jiangsu, China Patentee before: SVG Optronics, Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Ten Azusa Street Canglang District of Suzhou City, Jiangsu Province, No. 1 215006 Co-patentee after: SUZHOU SUDAVIG SCIENCE AND TECHNOLOGY GROUP Co.,Ltd. Patentee after: Suzhou University Address before: Ten Azusa Street Canglang District of Suzhou City, Jiangsu Province, No. 1 215006 Co-patentee before: SVG OPTRONICS, Co.,Ltd. Patentee before: Suzhou University |
|
| CP01 | Change in the name or title of a patent holder |