CN100368502C - Abrasive grain and semiconductor block slicing method using the same - Google Patents
Abrasive grain and semiconductor block slicing method using the same Download PDFInfo
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- CN100368502C CN100368502C CNB2005101341004A CN200510134100A CN100368502C CN 100368502 C CN100368502 C CN 100368502C CN B2005101341004 A CNB2005101341004 A CN B2005101341004A CN 200510134100 A CN200510134100 A CN 200510134100A CN 100368502 C CN100368502 C CN 100368502C
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Abstract
To provide abrasive grains and a semiconductor block slicing method suitable for use in semiconductor block slicing high in productivity. In this semiconductor block slicing method, a wire 6 from a supply reel 8 is arranged between a plurality of space-keeping rollers 5, and a slurry which is an abrasive grain/mineral oil mixture is supplied for slicing while the wire 6 is taken up to a take-up reel. In the grains that meet the purpose, linearity falls in the range of 1.4 to 2.4, and the total volume of grains with their volume diameters falling in between the average volume diameter -2 to +1 [mu]m accounts for >=65% of the whole grain volume.
Description
The present invention's application number that to be applicant Kyoto Ceramic Co., Ltd propose on November 25th, 2003 be 200310118127.5, denomination of invention divides an application for " abrasive particle and with the dicing method of the semiconductor piece of this abrasive particle " patent application.
Technical field
The present invention relates to a kind of abrasive particle that when semiconductor piece etc. being cut into slices, uses and the dicing method that uses the semiconductor piece of this abrasive particle with scroll saw.
Background technology
The semiconductor wafer that is used for semiconductor element or solar cell is formed by monocrystalline made from vertical pulling method or casting and polycrystalline semiconductor piece.For example, polycrystalline silicon wafer is general with the method manufacturing that is called injection molding.So-called this injection molding is to pour into a mould melted silicon in the mold that is made of the graphite that scribbles releasing agent etc., forms the method for silicon ingot by cooling curing.By or the end of removing this silicon ingot, or cut into and wish that size carries out cutting, the ingot blank that cutting is good is sliced into the size of regulation again, obtains monocrystalline and polycrystalline silicon chip thus.
As the device that cuts out certain thickness wafer from such semiconductor piece, adopt scroll saw.This scroll saw is that a steel wire coil with the piano wire of about 100～300 μ m of diameter etc. keeps drawing back in parallel to each other at a certain distance with in a plurality of grooves on the roller 5 around being arranged at interval, makes steel wire along a direction or twocouese walking.On one side for this steel wire provides the cutting fluid of mixing abrasive particles such as SiC in oil or water that is referred to as slip, on one side with semiconductor piece by being pressed on the silk, at leisure semiconductor piece is cut into slices.That is, utilize the machinability of the abrasive particle of taking away by steel wire, semiconductor piece is cut into slices.In the section that utilizes this scroll saw, can cut into slices to a plurality of semiconductor pieces simultaneously, in addition, compare with other dicing methods that use peripheral edge and interior Zhou Ren etc., section precision height, and, because the steel wire that uses is thin, has the advantage that can reduce slot loss (cutting expense).
The abrasive particle that is made of SiC that uses this moment is generally controlled (for example, opening 2000-309016 number with reference to the spy) with particle diameter.Like this, be limited in a certain scope, the slot loss can be kept within the specific limits the thickness deviation of the wafer that can suppress to cut by particle diameter with SiC.
, adopt the dicing method of above-mentioned semiconductor piece in the past, though can suppress the deviation of the thickness of the wafer of cutting into slices to a certain extent owing to aspect machinability, have deviation, exist section semiconductor wafer the surface or rise and fall or the problem of damage.
This is because owing to do not control the linear lag, camber, the size distribution of particle, enter the low particle of cutting force in abrasive particle, the cause that can not cut into slices smoothly.
Fig. 7 is the figure of explanation with the profile status of the wafer of the cutting-off method section of in the past semiconductor piece.Among the figure 6 represents steel wire, 9 expression wafers, 10 expression steel wire direction of travel outlet sides.Steel wire 6 is on one side to the walking of steel wire direction of travel, Yi Bian cut out wafer 9.At this moment, adopt the dicing method of semiconductor piece in the past,, be easy to generate defectives such as surface undulation or damage at steel wire direction of travel outlet side 10.This be because, owing to, the abrasive particle of competent high cutting force is arranged at the inlet side of steel wire direction of travel, though steel wire 6 travelings are smooth, be difficult near outlet side 10, provide the strong abrasive particle of cutting force so.Therefore, for the single crystal wafer etc., after cut-out, generally eliminate rising and falling or damage etc. by milled processed.But, so just increase man-hour, reduce productivity.
Summary of the invention
The present invention be directed to the problems referred to above and propose, purpose provides a kind of excellent in machinability and high abrasive particle of productivity and adopt the dicing method of the semiconductor piece of this abrasive particle to semiconductor piece.
Abrasive particle of the present invention, it is the abrasive particle that the cutting fluid of when semiconductor piece cuts out certain thickness wafer, using, adopts, its composition is SiC, the particle diameter corresponding with the average-volume of abrasive particle (being called average volume particle diameter) be in the scope of 6～16 μ m, and the linear lag is more than the 70 volume % at the SiC particle of 1.4～2.4 scope.
In addition, the dicing method of semiconductor piece of the present invention keeps batching the limit by the limit with winding off spindle and supplying with the slip that mixes above-mentioned abrasive particle in water or wet goods liquid with disposing the steel wire of being supplied with by wire feeding shaft between the roller at a plurality of intervals, and semiconductor piece is cut into slices.
As mentioned above, if employing the present invention, because abrasive particle is to be that SiC particle 70 volume %s more than constitute in 6～16 μ m and the linear lag at the particle of 1.4～2.4 scopes by average volume particle diameter, so when semiconductor piece is cut into slices, can carry out the high section of machinability.
In addition, in the present invention, not only consider the machinability at initial stage, and consider and keep this machinability.Therefore, at the same time to the large-scale semiconductor piece that can not cut into slices or number in the past during more in the past than the semiconductor piece of Duoing, owing to can keep its machinability, so can improve productivity.
In above-mentioned abrasive particle, more preferably the linear lag is more than the 70 volume % at the particle of 1.8～2.0 scopes.
In addition, if camber 1.2～1.8 scopes particle be more than the 70 volume %,, therefore be preferred then because machinability improves, more preferably camber 1.4～1.6 scopes particle be more than the 70 volume %.
The preferred silicon of above-mentioned semiconductor piece.
Can cut into slices to a plurality of above-mentioned semiconductor pieces simultaneously.
In addition, abrasive particle of the present invention is characterized in that, is made of following particle, that is, from the particle diameter than the average-volume of corresponding abrasive particle be the little 2 μ m of average volume particle diameter to the cumulative volume than the particle of the big 1 μ m of average volume particle diameter be the particle more than 65% of total abrasive particle volume.
For above-mentioned abrasive particle, more preferably constitute by following particle, that is, and from than the little 2 μ m of average volume particle diameter to the cumulative volume than the particle of the big 1 μ m of average volume particle diameter be the particle more than 70% of total abrasive particle volume.
In addition, the dicing method of semiconductor piece of the present invention, be to keep the steel wires supplied with by wire feeding shaft with configuration between the roller at a plurality of intervals, batch the limit by the limit with winding off spindle and supply with the slip that in water and wet goods liquid, mixes above-mentioned abrasive particle, the method that semiconductor piece is cut into slices.
If employing foregoing invention, because abrasive particle is to adopt following particle, promptly, from the particle diameter than the average-volume of corresponding abrasive particle be the little 2 μ m of average volume particle diameter to the cumulative volume than the particle of the big 1 μ m of average volume particle diameter be more than 65% of total abrasive particle volume, preferred particle more than 70%, so, when semiconductor piece was cut into slices, the problem that can suppress to produce in the past was that wafer surface rises and falls or damage.Thus, do not need to carry out required surface treatments such as grinding such as silicon single crystal wafer in the past.Therefore, can be sliced into the suitable for example wafer of solar cell device.
In the volume distributed median of above-mentioned abrasive particle, the preferred volume ratio is that maximum particle diameter is more than average volume particle diameter.
Description of drawings
Fig. 1 is the sketch chart of scroll saw that expression is used for the dicing method of semiconductor piece.
Fig. 2 is the figure of the shape of explanation abrasive particle.
Fig. 3 is the figure of other shapes of explanation abrasive particle.
Fig. 4 is the figure of another other shapes of explanation abrasive particle.
Fig. 5 is the figure of the volume distributed median of expression abrasive particle.
Fig. 6 is the figure of volume distributed median of the abrasive particle of other figures of expression.
Fig. 7 is the sectional view that the condition of surface of the wafer that obtains by semiconductor piece is cut into slices is described.
Embodiment
Below, the embodiment that present invention will be described in detail with reference to the accompanying.
Device constitutes
Fig. 1 is the sketch chart that expression is used to implement scroll saw of the present invention.Scroll saw is the device that cuts out certain thickness wafer from semiconductor piece.
In Fig. 1,1 is that slip supplying-nozzle, 2 is that slip receptor, 3a and 3b are that semiconductor piece, 4 is that sheet cutting table, 5 is that maintenance roller, 6 is that steel wire, 7 is that steeping vat, 8 is wire feeding shaft at interval.Usually being provided with 2～4 keeps at interval with roller 5.
This scroll saw is wound on a steel wire 6 of the piano wire of about 100～300 μ m of diameter etc. to be arranged at and keeps at interval with on a plurality of grooves on the roller 5, and configuration in parallel to each other at a certain distance makes steel wire along a direction or twocouese traveling.
On this scroll saw 6, from the cutting fluid of oil or water mixing abrasive particles such as SiC of slip supplying-nozzle 1 by the so-called slip of slip receptor 2 supplies.Supply with slip on one side, on one side semiconductor piece 3a, 3b (being called " semiconductor piece 3 " during common name) by being pressed on the steel wire 6, are slowly cut into slices to semiconductor piece upward from the below of semiconductor piece 3.At this moment, utilize the cutting force of the abrasive particle of taking away by steel wire 6, semiconductor piece 3 is cut into slices.
The quantity of the semiconductor piece of section as shown in Figure 1, can be 2, also can be more than 1 or 2.
Below, the numerical value of definition expression abrasive particle shape.
So-called " linear lag " is the maximum length (maximum diameter) of 1 abrasive particle and the ratio of maximum secting area, uses:
The linear lag=[(maximum length)
2/ maximum secting area] * (π/4)
Expression.At positive bowlder, the linear lag is 1, and is high more from just justifying the linear lag far away more.
In addition, " camber " of abrasive particle is the maximum perimeter of 1 mill and the ratio of maximum secting area, uses:
Camber=[(maximum perimeter)
2/ maximum secting area] * (1/ (4 π))]
Expression.At positive bowlder, camber is 1, and the value of the long more camber of girth is big more.
Same with this linear lag, the numerical value of flat ratio as the shape of expression abrasive particle also can use " needle-like than ".Needle-like is than using:
Needle-like ratio=absolute maximum length/width across corners
Expression.
So-called width across corners is meant and definitely greatly enhances most the length that at right angles intersects.
In addition, measure this linear lag or camber etc. with the sweep type laser microscope.
Fig. 2～Fig. 4 is the mode chart of explanation abrasive particle shape.As shown in Figure 2, be that the positive bowlder linear lag becomes 1 at the cross-sectional shape of abrasive particle P, when as shown in Figure 3 oval, high linearity is bigger than 1 more more for oval flat ratio.
It is the above particles of 70 volume % that abrasive particles such as SiC adopt the particle of the linear lag 1.4～2.4.In the abrasive particle of average volume particle diameter 6～16 μ m, be 1.4 when following in the linear lag, the shape of abrasive particle is being near shown in Figure 2 just round, the machinability variation.2.4 when above,, because other abrasive particle of this abrasive particle cut, weaken the cutting hardness of abrasive particle integral body in the linear lag, be difficult to reuse although the machinability at initial stage is good.
In addition, when average volume particle diameter is lower than 6 μ m since when section abrasive particle become and be difficult to rotation, so steel wire becomes and can not advance smoothly, thereby has silicon wafer surface or fluctuating or the problems such as damage or steel wire broken string that cut out that produce.
When average volume particle diameter surpasses 16 μ m,, therefore not preferred because the slot loss becomes big.
In addition, if being 1.4～2.4 particle, the linear lag is lower than 70 volume %, then since 1.4～2.4 beyond ratio uprise, therefore become near just round, or machinability variation, though or the machinability at initial stage is high but because other abrasive particle of this abrasive particle cut, weaken the cutting hardness of abrasive particle integral body, therefore becoming is difficult to reuse.
In addition, the linear lag is preferably in 1.8～2.0.Owing to by selected like this, can reduce the deviation of abrasive particle shape, reduce the cut of this abrasive particle, so whole abrasive particles can both be effective to cutting to other abrasive particles.
In addition, preferably this abrasive particle is that the particle of camber 1.2～1.8 is the above abrasive particles of 70 volume %.
When camber 1.2 when following, form near just round shape shown in Figure 2, machinability variation.In addition,,,, be difficult to reuse, also be not suitable for owing to be cut easily during in cutting in the projection around the SiC shown in Figure 4 although the machinability at initial stage is good 1.8 when above.
In addition, if the particle of camber 1.2～1.8 is lower than more than the 70 volume %, then because the ratio of the abrasive particle beyond the camber 1.2～1.8 becomes too high, so machinability variation or be difficult to reuse.
In addition, camber is preferably in 1.4～1.6.
In addition, also can be used as circularity and represent this camber.Should " circularity " be the inverse of camber.Also can adopt circularity (シ ス メ ッ Network ス) tester directly to measure circularity.
The circularity of measuring gained is relatively good at 0.84～0.87 o'clock.
Use needle-like than the time, preferably the needle-like ratio is set in 1.2～1.8, more preferably be set in 1.4～1.6.
Abrasive particle in the scope of the above-mentioned linear lag and camber can especially effectively be brought into play its effect when adopting the SiC abrasive particle that silico briquette is cut into slices.
In addition, have the above-mentioned linear lag or the abrasive particle of camber, can once pulverize with ball mill, pulverize with other ball mill secondary then, or obtain with the pulverizing of pulverizer secondary by baking quartz, tar and salt.
Below, introduce the volume distributed median of contained abrasive particle in the slip.
In the present invention, will be made as a (the μ m of unit) with respect to the particle diameter (being called " average volume particle diameter ") of the average-volume of contained abrasive particle in the slip.Adopt a to reach the abrasive particle of the distribution more than 65% of total abrasive particle volume for the cumulative volume of the abrasive particle of-2 μ m～+ 1 μ m.In addition, for the volume distributed median of abrasive particle, measure with the measuring method (the grinding tool granularity test method of grinding material) of JIS R6002.
Fig. 5 is the graphic representation of explanation abrasive particle volume distributed median.How many volumes are illustrated in a certain particle size region exists account for percent what abrasive particle of total abrasive particle.A represents average volume particle diameter among the figure.Average volume particle diameter a is the value of the integrated value of particle diameter and volume divided by the cumulative volume gained of abrasive particle.At this moment, the volume distributed median of abrasive particle can be with mensuration such as laser counters.
If employing the present invention, preferable particle size amounts to more than 65% of total abrasive particle volume at the volume from (a-2) μ m to the abrasive particle of (a+1) mu m range.If increase the ratio of abrasive particle that particle diameter is lower than the small particle size of (a-2) μ m, the abrasive particle of small particle size gets lodged between the abrasive particle of big particle diameter, hinders the work of abrasive particle integral body.On the contrary, if increase the ratio that particle diameter surpasses the big particle diameter abrasive particle of (a+1) μ m, deviation in the generation face aspect the thickness of the wafer that cutting obtains.That is, particle diameter helps cutting most at the abrasive particle from (a-2) μ m to (a+1) mu m range.
For example, when average volume particle diameter a was 15 μ m, preferable particle size reached more than 65% of total abrasive particle volume at the cumulative volume of the abrasive particle of 13 μ m～16 mu m ranges.
By the selected slip that adds the abrasive particle of realizing volume distributed median like this, the problem that can suppress in the past promptly takes place to rise and fall or damage at steel wire direction of travel outlet side 10 (with reference to Fig. 7).This be because of particle diameter from (a-2) μ m to the cutting force of the abrasive particle of (a+1) mu m range reason bigger than other scopes.
In addition, if particle diameter amounts to more than 70% of total abrasive particle volume at the volume from (a-2) μ m to the abrasive particle of (a+1) mu m range, can more effectively bring into play its effect.
In addition, the definition volumetric ratio is maximum particle diameter b.Fig. 6 shows this maximum volume particle diameter b.As shown in Figure 6, in the volume distributed median of whole abrasive particle, maximum volume particle diameter b is preferably in more than the average volume particle diameter a.That is:
b＞a
Thus, can further improve cutting force.By the ratio of the big particle diameter abrasive particle of minimizing like this, all abrasive particles that can effectively turn round help cutting easily.
Like this, if make particle diameter reach more than 65% of total abrasive particle volume, can utilize sizing screening at cumulative volume from (a-2) μ m to the particle of (a+1) mu m range.The fractionated method has wet classification and dry classification, but in order to make particle diameter reach more than 65% of total abrasive particle volume at the cumulative volume from (a-2) μ m to the abrasive particle of (a+1) mu m range, preferably carries out wet classification.This is because wet classification can screen the particle of small particle size more accurately.
In the operation of wet classification, have and adopt upwelling, horizontal flow and only based on the classification of leaving standstill, especially excellent in separation accuracy is the classification that utilizes upwelling.
In addition, utilize the classification of upwelling, roughly be divided into based on the situation of batch operation (taking out the particle of once supplying with one by one) and the situation of continous way operation (taking out the particle of supplying with continuously continuously).
Wherein, adopt upwelling and, the influx of classification liquid is set in the bottom of assorting cylinder, the pulp flow outlet that contains fine particle is set, the supplying opening of slip is set at pars intermedia on top based on the basic sorting equipment of batch operation.
As classification liquid, adopt the density ratio usually by the low liquid of classification particle.By the fractionated particle in classification liquid, owing to action of gravity is sunk, therefore with respect to classification liquid, be relatively and move down, but owing to continue to supply with classification liquid from the influx of assorting cylinder bottom, and upwards move in assorting cylinder, so the sedimentation of the rising of this classification liquid and particle offsets, the particle long period of slip shape is trapped in the assorting cylinder.
At this moment, the settling velocity of the slip shape particle of supplying with in assorting cylinder depends on these particles, and the thick more sedimentation of particle more early.That is, with the comparison of the lift velocity of classification liquid in, more early settled composition (coarse particle) is downward, is not that coarse particle (fine particle) moves up.
Its result in assorting cylinder, can form with the particle particle that directly corresponding particle diameter is big more offside in the laminate structure of below.
More than, embodiments of the present invention have been described, but enforcement of the present invention is not limited to above-mentioned embodiment, within the scope of the invention, can implement numerous variations.
Prepare only to have controlled average volume particle diameter abrasive particle, controlled the abrasive particle of the average volume particle diameter and the linear lag and controlled average volume particle diameter and the abrasive particle of the linear lag and camber.When the average volume particle diameter of abrasive particle is lower than 6 μ m and since when section abrasive particle become and be difficult to rotation, so steel wire traveling smoothly that becomes, thus have the surface of the silicon wafer that cuts out or rise and fall or problem that damage or steel wire break.
When average volume particle diameter surpasses 16 μ m,, therefore not preferred because the slot wearing and tearing become big.Therefore all be unified in 14.7 μ m.
Prepare 2 pieces that constitute by the polysilicon of the rectangular parallelepiped of about 150 * 150 * 300mm of size that casts with casting, cut into slices with scroll saw for 5 times repeatedly with identical abrasive particle.
The good article rate of the 1st time of this moment and the wafer of the 5th (wafer surface not damaged or fluctuating be non-defective unit) is shown in table 1.
The average volume particle diameter of abrasive particle, the linear lag and camber, after making into uniform state at the abrasive particle that stirs 1Lot 1.5t, being reduced to 16 by left and right sides method of offset divides, after 22 abrasive particles of taking-up are measured arbitrarily from each, in 22 data, remove 320 the distribution altogether of 20 data of maximum value and minimum value and calculate.
Table 1
| No. | Average volume particle diameter (μ m) | The ratio of the linear lag 1.4～2.4 (%) | The ratio of the linear lag 1.8～2.0 (%) | The ratio of camber 1.2～1.8 (%) | The ratio of camber 1.4～1.6 (%) | The 1st time good article rate (%) | The good article rate of the 5th (%) |
| 1 | 14.7 | 64.6 | 59.7 | 69.3 | 63.7 | 75.2 | 62.3 |
| 2 | 14.7 | 67.4 | 60.8 | 68.4 | 64.5 | 74.5 | 73.9 |
| 3 | 14.7 | 71.2 | 65.3 | 68.9 | 63.8 | 81.3 | 79.7 |
| 4 | 14.7 | 73.5 | 67.5 | 67.5 | 63.6 | 93.1 | 78.4 |
| 5 | 14.7 | 74.8 | 68.2 | 68.1 | 64.0 | 93.4 | 80.7 |
| 6 | 14.7 | 76.4 | 71.6 | 69.7 | 63.8 | 92.9 | 86.9 |
| 7 | 14.7 | 78.5 | 72.1 | 67.5 | 64.1 | 87.7 | 83.6 |
| 8 | 14.7 | 83.3 | 75.0 | 68.3 | 63.7 | 90.8 | 85.3 |
| 9 | 14.7 | 76.2 | 71.7 | 66.2 | 55.2 | 77.9 | 73.6 |
| 10 | 14.7 | 76.5 | 71.4 | 67.3 | 56.8 | 78.1 | 74.9 |
| 11 | 14.7 | 76.4 | 71.2 | 70.9 | 64.1 | 93.7 | 88.1 |
| 12 | 14.7 | 76.7 | 71.6 | 72.3 | 67.5 | 97.3 | 87.3 |
| 13 | 14.7 | 76.1 | 71.8 | 74.2 | 70.7 | 95.6 | 90.4 |
| 14 | 14.7 | 76.3 | 71.3 | 76.4 | 72.8 | 97.2 | 90.1 |
When the abrasive particle in the past of the condition No.1 that has only controlled average volume particle diameter, No.2, the 1st time good article rate is 74.5～75.2%, and the good article rate of the 5th is 62.3～73.9%.
And in the condition No.3 that has controlled the average volume particle diameter and the linear lag～14, the ratio of the linear lag 1.4～2.4 is in above condition No.3～8 of 70% volume, the 1st time good article rate, the 5th good article rate good article rate height during all than the abrasive particle in the past of the condition of employing No.1, No.2.
In addition, especially in condition No.3～8, become condition No.6～8 more than the 70 volume %,, be than higher value even the good article rate of the 5th also surpasses 85% for the ratio of the linear lag 1.8～2.0.
In addition, in the ratio control of the linear lag 1.4～2.4 of condition No.9～14 is that 76.1～76.7 volume %, 1.8～2.0 ratio control are in the abrasive particle of 71.2～71.8 volume %, for the ratio of camber 1.2～1.8 is condition No.11～14 more than the 70 volume %, the 1st time good article rate surpasses 90%, presents high value.
If particularly adopt the ratio of camber 1.4～1.6 to surpass the condition No.13 of 70 volume %, 14 abrasive particle, then the good article rate of the 5th also surpasses 90%, becomes higher value.
With scroll saw the piece that the polysilicon of the rectangular parallelepiped of size 150 * 150 * 300mm of casting with casting constitutes is cut into slices.
As abrasive particle, adopt following 5 kinds.Arbitrary average volume particle diameter all is 14.7 μ m.
The distribution of particle diameter, after making into uniform state at the abrasive particle that stirs 1Lot 1.5t, be reduced to 16 by left and right sides method of offset and divide, after 22 abrasive particles of taking-up are measured arbitrarily from each, in 22 data, remove 320 the distribution altogether of 20 data of maximum value and minimum value and calculate.
(1) abrasive particle of volume distributed median in the past, the volume aggregate-value of total abrasive particle are that the particle diameter of 97% o'clock abrasive particle is that its volume aggregate-value is 1.5～1.8 times of particle diameter of 50% o'clock abrasive particle.
(2) abrasive particle of volume distributed median in the past, average volume particle diameter in-2 μ m～+ 1 μ m zone (that is the total of the volume of) abrasive particle, 12.7 μ m～15.7 μ m, become whole abrasive particles volume 64.5%.The maximum volume particle diameter of this abrasive particle is 15.0 μ m.
(3) abrasive particle of volume distributed median of the present invention, average volume particle diameter in-2 μ m～+ 1 μ m zone (that is the total of the volume of) abrasive particle, 12.7 μ m～15.7 μ m, become whole abrasive particles volume 65.6%.The maximum volume particle diameter of this abrasive particle is 15.3 μ m.
(4) abrasive particle of volume distributed median of the present invention, (that is, 12.7 μ m～15.7 μ m the volume of) abrasive particle adds up to, and becomes 70.9% of total abrasive particle volume in the zone of average volume particle diameter-2 μ m～+ 1 μ m.The maximum volume particle diameter of this abrasive particle is 15.1 μ m.
(5) abrasive particle of volume distributed median of the present invention, (that is, 12.7 μ m～15.7 μ m the volume of) abrasive particle adds up to, and becomes 75.1% of total abrasive particle volume in the zone of average volume particle diameter-2 μ m～+ 1 μ m.The maximum volume particle diameter of this abrasive particle is 15.2 μ m.
In the wafer that obtains according to (1), (2), (3), (4), (5), investigated the number of packages of the surperficial wafer that has visual visible to rise and fall or damage, it the results are shown in table 2.Numeric representation results from and rises and falls or the rejection number ratio of surface damage.
Table 2
| The ratio of average volume particle diameter-2 μ m～+ 1 μ m | There is the ratio of the wafer of fluctuating on the surface | There is the ratio (%) of the wafer of damage on the surface | Good article rate (%) | ||
| (1) | Abrasive particle in the past | Not control | 4.2 | 5.4 | 81.7 |
| (2) | Abrasive particle in the past | 64.5 | 3.6 | 3.9 | 84.2 |
| (3) | Abrasive particle of the present invention | 65.6 | 0.8 | 1.5 | 90.4 |
| (4) | Abrasive particle of the present invention | 70.9 | 0.5 | 1.1 | 92.3 |
| (5) | Abrasive particle of the present invention | 75.1 | 0.4 | 1.0 | 92.5 |
In abrasive particle in the past, the ratio that produces surface undulation on the wafer is 4.2%, for the zone of average volume particle diameter-2 μ m～+ 1 μ m of (2) (promptly, 12.7 the volume of abrasive particle μ m～15.7 μ m) adds up to the abrasive particle of 64.5% the volume distributed median in the past become total abrasive particle volume, becomes 3.6%.
Relative therewith, (that is, 12.7 μ m～15.7 μ m the volume of) abrasive particle adds up to the abrasive particle of 65.6% the volume distributed median of the present invention that becomes total abrasive particle volume, becomes 0.8% for the zone of average volume particle diameter-2 μ m～+ 1 μ m of (3).In addition, add up to the abrasive particle of 70.9% the volume distributed median of the present invention that becomes total abrasive particle volume for the volume of the abrasive particle of (4), become 0.5%, 75.1% the abrasive particle of becoming for (5) becomes 0.4%.Like this, add up to the abrasive particle of the volume distributed median of the present invention 65% or more that becomes total abrasive particle volume at the volume of the abrasive particle in the zone of average volume particle diameter-2 μ m～+ 1 μ m, the ratio that wafer surface produces fluctuating reduces significantly.In addition, add up to the abrasive particle of the volume distributed median of the present invention 70% or more that becomes total abrasive particle volume at the volume of the abrasive particle in the zone of average volume particle diameter-2 μ m～+ 1 μ m, wafer surface produces the further reduction significantly of ratio that rises and falls.In addition, for abrasive particle of the present invention, surface damage also is reduced to 1.5%～1.0% significantly from 5.4%, 3.9%.
Hence one can see that, abrasive particle in the past for (1), good article rate (all rejection number ratios) is 81.7%, for the zone of average volume particle diameter-2 μ m～+ 1 μ m of (2) (promptly, 12.7 the volume of abrasive particle μ m～15.7 μ m) adds up to the abrasive particle of 64.5% the volume distributed median become total abrasive particle volume, be 84.2%, for the zone of average volume particle diameter-2 μ m～+ 1 μ m (promptly, 12.7 the volume of abrasive particle μ m～15.7 μ m) adds up to the abrasive particle of the present invention of (3) more than 65%～(5) that become total abrasive particle volume, good article rate rises to more than 90%, especially (promptly for the zone of average volume particle diameter-2 μ m～+ 1 μ m, 12.7 the volume of abrasive particle μ m～15.7 μ m) adds up to (4) more than 70% that become total abrasive particle volume, (5) abrasive particle, good article rate surpasses 92%, shows high good article rate.
Claims (6)
1. abrasive particle, the cutting fluid of when semiconductor piece cuts certain thickness wafer, using, adopt, it is characterized in that: constitute by following particle, promptly, the particle diameter of the average-volume of corresponding abrasive particle is that average volume particle diameter is the scope of 6～16 μ m, from than the little 2 μ m of described average volume particle diameter to the cumulative volume than the particle of the big 1 μ m of average volume particle diameter be the particle more than 65% of total abrasive particle volume
Wherein, the composition of described abrasive particle is SiC,
The linear lag of particle is more than the 70 volume % of volume of abrasive particle integral body at the particle of 1.4～2.4 scope, perhaps, the camber of described particle 1.2～1.8 scopes particle be more than the 70 volume % of volume of abrasive particle integral body.
2. abrasive particle according to claim 1 is characterized in that: constitute by following particle, that is, and from than the little 2 μ m of average volume particle diameter to the cumulative volume than the particle of the big 1 μ m of average volume particle diameter be the particle more than 70% of total abrasive particle volume.
3. abrasive particle according to claim 1 and 2 is characterized in that: in the volume distributed median of above-mentioned abrasive particle, volumetric ratio is that maximum particle diameter is more than average volume particle diameter.
4. the dicing method of a semiconductor piece; Keep with configuration between the roller by the steel wire of wire feeding shaft supply at a plurality of intervals; By the limit with winding off spindle batch, the limit supplies with the slip be mixed with abrasive particle in liquid; Semiconductor piece is cut into slices; It is characterized in that: adopt following particle; Namely; The particle diameter of the average external volume of corresponding abrasive particle is that average volume particle diameter is the scope of 6～16 μ m; From than the little 2 μ m of described average volume particle diameter to the cumulative volume than the particle of the large 1 μ m of average volume particle diameter be the particle more than 65% of total abrasive particle volume
Wherein, the composition of described abrasive particle is SiC, the linear lag of particle is more than the 70 volume % of volume of abrasive particle integral body at the particle of 1.4～2.4 scope, perhaps, the camber of described particle 1.2～1.8 scopes particle be more than the 70 volume % of volume of abrasive particle integral body.
5. the dicing method of semiconductor piece according to claim 4 is characterized in that: in the volume distributed median of above-mentioned abrasive particle, volumetric ratio is that maximum particle diameter is more than average volume particle diameter.
6. according to the dicing method of claim 4 or 5 described semiconductor pieces, it is characterized in that: above-mentioned semiconductor piece is a silicon.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2002346086 | 2002-11-28 | ||
| JP2002346087 | 2002-11-28 | ||
| JP2002346086 | 2002-11-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200310118127 Division CN1239303C (en) | 2002-11-28 | 2003-11-25 | Abrasion granule and slicing up method of semiconductor block using the abrasion granule |
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| CN1800292A CN1800292A (en) | 2006-07-12 |
| CN100368502C true CN100368502C (en) | 2008-02-13 |
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| CNB2005101341004A Expired - Fee Related CN100368502C (en) | 2002-11-28 | 2003-11-25 | Abrasive grain and semiconductor block slicing method using the same |
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| JP6604313B2 (en) * | 2016-11-10 | 2019-11-13 | 株式会社Ｓｕｍｃｏ | Abrasive Grain Evaluation Method and Wafer Manufacturing Method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5215551A (en) * | 1989-02-01 | 1993-06-01 | Showa Denko K.K. | Alumina-based ceramics materials, abrasive materials and method for the manufacture of the same |
| JPH07331229A (en) * | 1994-06-06 | 1995-12-19 | Bayer Ag | Suspension for cutting |
| CN1185367A (en) * | 1996-08-13 | 1998-06-24 | Memc电子材料有限公司 | Method for cutting ingot and apparatus thereof |
| JP2000117726A (en) * | 1998-10-20 | 2000-04-25 | Toray Eng Co Ltd | Wire saw |
-
2003
- 2003-11-25 CN CNB2005101341004A patent/CN100368502C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5215551A (en) * | 1989-02-01 | 1993-06-01 | Showa Denko K.K. | Alumina-based ceramics materials, abrasive materials and method for the manufacture of the same |
| JPH07331229A (en) * | 1994-06-06 | 1995-12-19 | Bayer Ag | Suspension for cutting |
| CN1185367A (en) * | 1996-08-13 | 1998-06-24 | Memc电子材料有限公司 | Method for cutting ingot and apparatus thereof |
| JP2000117726A (en) * | 1998-10-20 | 2000-04-25 | Toray Eng Co Ltd | Wire saw |
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| CN1800292A (en) | 2006-07-12 |
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