CN100366790C - Film forming device and film forming method - Google Patents
Film forming device and film forming method Download PDFInfo
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- CN100366790C CN100366790C CNB2003101012667A CN200310101266A CN100366790C CN 100366790 C CN100366790 C CN 100366790C CN B2003101012667 A CNB2003101012667 A CN B2003101012667A CN 200310101266 A CN200310101266 A CN 200310101266A CN 100366790 C CN100366790 C CN 100366790C
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Abstract
Raw material supplying sources, namely a target and a microwave gun are provided in a vacuum chamber such that they oppose a substrate, and a main evacuation port is disposed closer to the microwave gun between both the raw material supply sources. A control system memorizes oxygen gas flow rate under a predetermined argon gas flow rate, and sputter film formation rates comprised of three modes of high-, middle- and low-speeds, namely, high-speed metallic species film forming mode, low-speed compound species film forming mode and intermediate film forming mode depending on the oxygen gas flow rate, as reference data. At the time of film formation under a predetermined argon gas flow rate, an oxygen gas flow rate and an argon gas flow rate corresponding to the high-speed metallic species film forming mode are selected. Then, both the gas flow rates are controlled so as to maintain the ratio of both the flow rates of the selected oxygen gas and argon gas, and then, a reaction process by operating a microwave gun having an oxygen gas introduction port and an oxygen exhaust port nearby and a film forming process by operating a sputter target having an argon gas introduction port nearby are executed alternately so as to execute pulse-like film forming process.
Description
Background of invention
1. invention field
The present invention relates to forming thin film device and forming thin film method, be specifically related to metal compound film film deposition system and the forming thin film method that is used on this device.
2. description of Related Art
In the optics field, require to form metal compound film (oxide film, nitride film, fluoride films etc.) with the quick split hair caccuracy of sputtering method.
Yet with under the sputtering method film forming situation, adopt by this metallic compound for example metal oxide forms target the time, its film deposition rate situation very low and the formation metallic film is different.Therefore, though can form metal compound film with reactive sputtering method sometimes, but when sending reactant gases excessive, also can significantly reduce the rate of film build of sputtered film, in this method, reactant gases (for example oxygen, nitrogen, fluorine gas etc.) is incorporated in the sputtering atmosphere.
Therefore, according to disclosed method (for example patent documentation 1-4), in order to keep high forming thin film speed, at first on end liner, deposit the ultrathin film of forming by metal with sputtering method, plasma body or the active result that produces with reactant gases shines this ultrathin film subsequently, makes it convert metal compound film to.The technology of repeated deposition ultrathin film and convert the technology of compound film to then, repeated several times forms the metal compound film with requirement film thickness.
Yet want the thickness of split hair caccuracy control film very difficult, because in these conventional forming thin film devices, end liner is motion constantly between sputter area and conversion zone, and another problem of Xing Chenging is that the structure of device is very big and complicated thus.
That is, disclosed sputter equipment has the structure of disk load mode in patent documentation 1,2, shown in the signal sectional elevation of Fig. 1.With reference to figure 1, this device 10 comprises spatter film forming zone (metal film forming zone) 11, oxide regions (conversion zone) 12, and these area configurations also comprise the end liner rotating mechanism 13 that is contained in central authorities in the left and right direction of drawing.This spatter film forming zone comprises target 14, forms the sputter cathode 15 of one and be configured near the sputter gas intake 16 of negative electrode with target.This oxide regions 12 comprises microwave excited plasma producer 17 and is configured near the oxygen intake 18 of this producer.This end liner rotating mechanism 13 is made of rotating disk 19a, this dial rotation, and end liner 19 is placed on this rotating cylinder.
In the sputter equipment 10 of this structure, the argon gas and the oxygen of regulation flow is incorporated in the vacuum chamber by sputter gas intake 16 and oxygen intake 18, in this vacuum chamber, form predetermined pressure state.This rotating disk 19a rotates, and when target 14 and plasma generator 17 during facing to end liner 19, just can constantly repeat film-forming process and oxidizing process.
This spline structure of disclosed sputter equipment in patent documentation 3,4 makes end liner rotate, shown in the schematic section of Fig. 2.With reference to Fig. 2, device 20 comprises sputter area (metal becomes diaphragm area) 21 and oxide regions (being reacted into diaphragm area) 22, and these zones are positioned at the left and right direction of this figure.This metallic film becomes diaphragm area 21 to comprise target 24, form the sputter cathode 25 of one and be configured near the sputter gas intake 26 of these parts with target.This oxide regions 22 comprises microwave excited plasma producer 27 and is configured near the oxygen intake 28 of this producer.Metallic membrane form zone 21 and above the oxide regions 22 configuration rotate end liner 29 by rotating end liner support (not shown) fixed.In this device 20, the argon gas and the oxygen of regulation flow is incorporated in the vacuum chamber through sputter gas intake 26 and oxygen intake 28, make this this vacuum chamber form predetermined pressure state.This rotation end liner 29 is rotated,, just alternately carry out film-forming process and oxidizing process when target 24 and plasma generator 27 during facing to end liner 29.
Above-mentioned conventional equipment adopts the system that end liner 19,29 is rotated, and makes end liner can enter and withdraw from the spatter film forming zone 11,21 of carrying out film-forming process, and enters and withdraw from the conversion zone 12,22 of carrying out reaction process.Because the end liner position as the film forming object is always changing, be difficult to form the stable high film of reliability.In addition, as mentioned above, because this structure of device needs rotating mechanism, so structure is huge and complicated.
With reference to Fig. 1 and 2, spatter film forming zone 11,21 and conversion zone 12,22 are spatially divided by partition wall 10a, 20a to be opened.Yet viewpoint from structure, this is difficult to keep the gas-tight seal of respective regions, when end liner moved between one-tenth diaphragm area and conversion zone, the reaction atmosphere of introducing for reaction process in conversion zone for example oxygen just can enter into the spatter film forming zone, so the quality on target surface just reduces.That is, because become membrane stage always unsettled, so cause the unsettled major reason of quality of forming film.
In order to get rid of the influence of the survival gas that enters film-forming process by this way, can consider when reaction process finishes, to stop the transport of reactant gases body, and carry out vacuumizing of long period, thereby remove reactant gases effectively.Yet this method needs the long period to carry out technology to be switched, so efficient is very low.
Patent documentation 1: Japanese patent application bulletin No.H11-256327 (Fig. 1)
Patent documentation 2: Japanese patent application bulletin No.H03-229870 (Fig. 8)
Patent documentation 3: Japanese patent laid-open publication gazette No.H08-19518 (Fig. 4)
Patent documentation 4: U.S. Patent No. 4420385 (Fig. 2 and 4)
Brief summary of the invention
Owing to there are the problems referred to above, the purpose of this invention is to provide a kind of forming thin film device and adopt the used forming thin film method of this device, this apparatus structure simply can effectively form reliable film.
In order to achieve the above object, the invention provides a kind of forming thin film device, this device comprises the raw material delivery source, i.e. spatter film forming source in same vacuum chamber and reactant gases delivery source, make these two sources all facing to end liner, wherein, the main venting port that this vacuum chamber is vacuumized disposes near the reactant gases delivery source in two sources, this forming thin film device also comprises Controlling System, this Controlling System is carried out reaction process by operation reactant gases delivery source, this reactant gases delivery source has reactant gases intake and reactant gases relief outlet, and carries out film-forming process by operation spatter film forming source, and this spatter film forming source has the sputter gas intake.
As a result, utilize main venting port that vacuum chamber is always vacuumized and can form the sputter gas stream between main venting port and spatter film forming source between film stage.Therefore, the reactant gases of being emitted by reacting gas source is subjected to the shielding of above-mentioned sputter gas air-flow curtain, just for that part of gas that carries out the directive end liner that the requirement reaction launches is not shielded, can prevent thus reactant gases enter into the spatter film forming source for example sputtering target near.Even therefore incessantly from reactant gases delivery source transport of reactant gases body, do not stop to carry reactant gases from this source emission, also can avoid the reduction of forming thin film speed under proper condition.
Can be separately because comprise the reacting gas source of reactant gases by above-mentioned gas curtain, so can utilize Controlling System to prevent that the forming thin film technology of moving the reaction process of reacting gas source and moving the spatter film forming source is interfering with each other, this spatter film forming source has the sputter gas intake, and this Controlling System can be controlled this two technologies.So just, can not need to make end liner to rotate, alternately enter film forming and conversion zone, fully and conventional equipment different.
On the other hand, when employing have said structure can prevent between film-forming process and the reaction process interferential film deposition system time, can also see, rate of film build can be drawn as rate curve, this curve by high, in and three zones of low speed constitute, promptly high-speed metal film forming zone, the reaction film of lower velocity become the diaphragm area that becomes of diaphragm area and middling speed.Can carry out forming thin film technology highly reliably by controlling these zones.
Specifically be that this control divides two kinds.That is, a kind of control is alternately carried out and without any overlapping two kinds of technologies, can finish back any technology from reaction process and film-forming process in other technology and begin.Another kind of control constantly repeats film-forming process, and carries out reaction process its off time, promptly is carried out to membrane process with pulse mode under the condition of carrying out reaction process.
Certainly in both cases, all can carry out the fixed forming thin film when end liner is maintained fixed, and forming thin film technology can switch with pulse mode, switch between execution/interruption, making can be with the high-power forming thin film that carries out.
In the conventional structure that separately only depends on the device configuration of reaction process and two kinds of technologies of forming thin film technology, problem may take place, the sputtering target surface that promptly is used for film-forming process can be subjected to the oxidation of reactant gases oxygen, makes film forming efficiency reduce.Though as a kind of measure, the most handy high-power the carrying out of film-forming process, but may produce between two kinds of technology under the situation of interferential routine techniques, the power that requires is higher than the power of calculating, and need add higher power continuously, therefore produce another problem, promptly film thickness increases.Because these reasons, so convert the parameter that metallic compound must consider when thin to and change will being deposited on ultrathin film on the end liner, this variation is difficult to control.
In contrast,, and can utilize gas curtain to prevent to disturb,, and not produce the new problem that film thickness increases so the present invention can carry out forming thin film highly reliably owing to film-forming process switches between execution/interruption with pulse mode.
Concrete structure for the forming thin film device, as reacting gas source, the plasma generator that can utilize reactant gases is microwave plasma-generator, ion gun or radiation mechanism for example, and main venting port and near the reactant gases venting port that is positioned at this plasma body producer are equipped with flow control valve respectively.As a result, can realize the condition of continuous full-time transport of reactant gases body.
That is, use this flow control valve can regulate the flow velocity of sputter gas and reactant gases.When employing has the film deposition system of said structure, can see, the correlationship that forming thin film speed has can be drawn as rate curve, sputter gas velocity and reaction gas flow speed are as parameter in this curve, this curve by high, in and three zones of low speed constitute, promptly become diaphragm area, low speed reactive film to become diaphragm area to become diaphragm area to constitute with middling speed by the high speed metal.In other words, can with the spatter film forming rate-controlling high, in and in three zones of low speed, mainly by the reactant gases flow rate control under predetermined sputter gas velocity condition, above-mentioned flow control valve can be carried out the flow rate regulation function.
Adopt this film deposition system can inhibited reaction gas rotten to the influence of forming thin film technology and target material, even between film stage, carry sputter gas and reactant gases continuously.Therefore, can switch to membrane process and reaction process fast.In addition,,, can form film like this, therefore can form highly reliably effectively film with requirement film thickness so can carry out forming thin film technology by applying pulse power because can switch to membrane process and reaction process.In addition, because as mentioned above, end liner is a fixed, so can remove the mechanism that rotates end liner, can avoid the structure of complexity and the increase of cost thus.In addition, this device can be applied to the spatter film forming method of straight-line type, and this is difficult to for the mechanism that rotates end liner.
In the forming thin film device, carry under the condition of sputter gas and reactant gases between film stage continuously, can be according to any method in above-mentioned two kinds of control methods, alternately repeat the high-speed film film-forming process and the chemical reaction process of metal ultrathin film, can effectively form the fabulous metal compound film of film quality, meet the requirements of film thickness, this high-speed film film-forming process only moves two spatter film forming sources in the raw material delivery source, and reaction process only moves the reactant gases delivery source, and this chemical reaction carries out in the film thickness direction of metal ultrathin film.
In this alternate operation, a kind of control method hockets two kinds of technologies, can finish any technology of back from film-forming process and reaction process in other technology and begin, and another kind of control method constantly repeats film-forming process, and in pitch time, keep reaction process.Can be with any method in these two kinds of methods.
Promptly, because it is alternately repeated forming the dominant technology of film forming and the dominant technology of reaction process (converting metal compound film to) of metallic film (ultrathin film) on end liner, being included in the situation of moving reacting gas source between execution/interruption when the sputtered film film deposition source switches towards mode with pulse continuously also can think alternately repeated, so can effectively form the fabulous metal compound film of film quality, until film thickness that requires.
Promptly, the Controlling System of forming thin film device is stored in reactant gases flow velocity and the spatter film forming speed under the predetermined sputter gas velocity, as reference data, the sputtered film rate of film build comprise height, in and three kinds of patterns of low speed, be high speed metallic forms forming thin film pattern, low speed compound product forming thin film pattern and middling speed forming thin film pattern, can select spatter film forming speed according to the reactant gases flow velocity.During the forming thin film under the predetermined sputter gas velocity, can select reactant gases flow velocity and sputter gas flow velocity corresponding to high speed metallic forms thin film-forming method, control two kinds of gas flow rates (the rapid-result and sputter gas flow velocity of reacting gas flow) then, thereby the ratio between two kinds of gas flow rates that keep selecting is constant.Therefore, can avoid the reduction of spatter film forming speed, because can be chosen to membrane process than the more dominant condition of reaction process, perhaps selective reaction technology is than forming the more dominant condition of membrane process, so can alternately repeat a technology than the more dominant condition of another technology, can form film thus with requirement film thickness.
In this case, in each time film-forming process, the increase of the film thickness that is formed by this forming thin film technology preferably is limited to less than 20 .Therefore, can be penetrated into the whole layer of ultrathin film, and can not be subjected to the influence of sedimentary film thickness in film-forming process, can obtain the fabulous metal compound film of film quality thus at the chemical reaction of reaction process subsequently.
When utilizing forming thin film device of the present invention on end liner, to form compound film, can form shielding effect by the sputter air-flow, the shielding reacting gas flow makes to be carried out to membrane process and reaction process, and can stop simultaneously reactant gases enter into target near.By switch the conveying of sputter gas with pulse mode, between execution/interruption, switch, can in film-forming process, form film, even under the condition of carrying sputter gas and reactant gases continuously, also be like this with the distinctive high speed film forming speed of metallic forms film forming.In reaction process, can carry out complete reaction along whole film thickness direction with the reactant gases of appropriate amount.As a result, can form the film of required thickness, and can not cause the unwanted increase of film thickness.Because sputtering source and reacting gas source are separated by argon gas stream, so can use the fixedly film-forming system of end liner, this system is being fabulous aspect the one-tenth membrane stability.This film-forming system is simple in structure, and cost is low.
In addition, when this device is used for inline system, not only can carry out fixed film forming, but also can carry out the film forming of delivering.Device is contained in this system can effectively increase film forming efficiency.
Brief Description Of Drawings
Fig. 1 is the schematic section of the disk delivering forming thin film device of routine;
Fig. 2 is the schematic section of the end liner rotary type forming thin film device of routine;
Fig. 3 is the schematic section of first embodiment of the invention forming thin film device;
Fig. 4 is a graphic representation, and it is when being scheduled to flow velocity that argon gas is shown, the relation between oxygen gas flow rate and the forming thin film speed;
Fig. 5 is the schematic section of second embodiment of the invention forming thin film device;
Fig. 6 is the schematic section of third embodiment of the invention forming thin film device;
Fig. 7 is the schematic section of fourth embodiment of the invention forming thin film device;
Fig. 8 is the schematic section of fifth embodiment of the invention forming thin film device;
Fig. 9 is the schematic section of sixth embodiment of the invention forming thin film device;
Figure 10 is the film-forming process of the present invention's first example and the technological cycle synoptic diagram of oxidizing process;
Figure 11 is the film-forming process of the present invention's the 3rd example and the technological cycle synoptic diagram of oxidizing process;
Figure 12 is the film-forming process of the present invention's the 4th example and the technological cycle synoptic diagram of oxidizing process.
The explanation of preferred embodiment
Fig. 3 is a schematic section, and the forming thin film device of first embodiment of the invention is shown.In Fig. 3, near the territory, a lateral areas of device 30 bottoms, chamber, dispose negative electrode 35, this negative electrode has the Si target 34 with its formation one.Target 34 covers by protecting sheet 31 with the negative electrode 35 that forms one, and this protecting sheet comprises sputter gas intake 36, just is not capped in the alpha emission direction.Negative electrode 35 is by DC power supply.
Fixing at upper area by end liner support 39a fixed end liner 39, and target 34 and microwave gun 37 are configured to facing to this end liner 39.The main venting port 43 that is connected in the vacuum pump (not shown) is configured on the side of device chamber 30 through the second conductance valve 42.
The first and second two conductance valves 41 and 42 are structure so all, makes their opening degree be controlled by the Controlling System (not shown).In addition, at the center configuration partition wall 44 that installs 30 bottoms, chamber.The actual microwave radiation district that this partition wall 44 is configured to extend into actual sputtering particle flight range that two extreme point lines by end liner 39 respect to one another and target 34 form and is formed by two extreme point lines of end liner 39 respect to one another and microwave gun 37.
Desiredly with forming thin film device 30 film forming the time be, can effectively form film, avoid simultaneously because the oxygen that enters makes the surface oxidation of target 34.The present invention can utilize the shielding effect that is produced by argon gas, and this argon gas is expressed as the sputter air-flow in Fig. 3.
As mentioned above, adopt sputtering method metal refining ultrathin film, plasma body or the active result that reactant gases is produced is mapped on this ultrathin film then, can convert this film to metal compound film thus.Then with ultrathin film depositing operation and compound film conversion process repeated several times.When being fixed on the regulation flow velocity when the change oxygen gas flow rate and with the sputter air-flow, Fig. 4 illustrates the correlationship (supposition is 100sccm as the hydrogen flow rate of sputter gas, and its one-tenth film pressure is 0.3Pa) between corresponding oxygen gas flow rate and the rate of film build.Spatter film forming speed is positioned at the high speed zone corresponding to metallic forms film forming pattern (metal mode), and this mode can be guaranteed high rate of film build.Spatter film forming speed is positioned at the film forming pattern (oxide mode) of the zone of low speed corresponding to oxide form, and this pattern can be guaranteed the low speed rate of film build in Fig. 4.In addition, the transition portion that carries out the transition to oxide form forming thin film pattern from metallic forms forming thin film formula is called as middling speed film forming pattern, so spatter film forming speed can be divided into high speed, middling speed and three kinds of patterns of low speed.
In above-mentioned metallic forms film forming pattern, can utilize the shielding effect of argon gas to prevent entering of oxygen, sedimentary material is almost formed by metal on end liner, so can keep the distinctive high rate of film build of metallic membrane.On the other hand, in the film forming pattern of oxide form, because Oxygen Flow speed increases, thus the shielding effect of argon gas reduction, and produce the reaction gas atmosphere that comprises oxygen, and make the characteristic of target degenerate, reduce rate of film build thus.Because in the film forming pattern of metallic forms, almost completely the settled layer of being made up of metal chemically is being active, so after deposition on the end liner, before forming sizable thickness, this settling is as easy as rolling off a log reaction.Therefore, after acquiring a certain degree, film thickness can carry out oxidizing reaction, and thus can be at the sedimentary film of film thickness direction complete oxidation.Though forming metal oxide film is last purpose, when needs form the sizable film of above-mentioned film thickness, can reach this point by the ultrathin film technology and the oxidizing reaction technology of repeated deposition metal.At this moment, the rate of film build of metal oxide film depends on the high metal film forming speed of metallic forms forming thin film pattern and the oxidizing reaction rate of depositing metal layers, and this forming thin film speed is much larger than the forming thin film speed in sull film forming pattern.The inventive system comprises the flow adjustment mechanism and the deposited film reaction mechanism that are used for sputter gas and reactant gases, so that carry out effective film forming.
On end liner 39, forming SiO with vacuum chamber 30 shown in Figure 3
2During film, vacuumize, make in the device chamber 30 to keep predetermined pressure by main venting port 43.With after sputter gas intake 36 is introduced the argon gas of predetermined amount, introduce the oxygen of specified amount simultaneously through oxygen intake 38, keep predetermined pressure thereby make in the device chamber 30.At this moment, regulate the second conductance valve 42, regulate the flow of argon gas and oxygen thus, for example make under the 0.3Pa constant pressure, when argon flow amount is 100sccm, oxygen flow to be fixed on about 50sccm with the Controlling System (not shown).Keep this throughput ratio, just can fully form the shielding effect of hydrogen, thereby prevent the surperficial oxidized of target 34, keep quite high spatter film forming speed simultaneously.Can roughly measure the trend of air-flow with the ionization vacuum meter A (being used for argon gas) and the ionization vacuum meter B (being used for oxygen) that are contained in the device shown in Figure 3.
By the direct supply (not shown) with predetermined power for example 1kW power be added on the Si target 34, make negative electrode 35 enter the output waiting status.On the other hand, add predetermined power (for example 0.5kW), make the radiation of microwave plasma enter waiting status with the microwave power supply (not shown) that is connected in microwave gun 37.
With this understanding, can be carried out to membrane process with above-mentioned Controlling System operation cathode power, the operation microwave power supply carries out oxidizing process (reaction process), repeats alternately to carry out the scheduled time.When flow is higher than oxygen flow, form the hydrogen stream, free in the institute of film-forming process and oxidizing process, this stream is all near the main venting port 43 of the flow direction of argon gas intake 36.Therefore, the oxygen of introducing from oxygen intake 38 is by the microwave-excitation of microwave power supply, and is drawn out of in company with above-mentioned argon gas stream from main venting port 43, and just the oxygen as oxygen plasma of directive end liner 39 is not drawn out of.Therefore, even oxygen is introduced from oxygen intake 38 always, argon gas stream also forms gas curtain, plays shielding effect, enters near the target so can suppress oxygen, therefore can prevent because the variation of the rate of film build that the target oxidation causes and the variation of film quality.Because in above-mentioned metallic forms film forming pattern, on end liner 39, keep metal deposit, so can obtain quite high film forming speed.
In addition; in forming thin film device of the present invention chamber 30; in the space that surrounds by protecting sheet 32; configuration oxygen venting port 40; this venting port is by the first-class pilot valve 41 as supplementary unit; thereby can carry out the differential pressure exhaust by oxygen exhaust 40 and main exhaust 43, can regulate the discharging of oxygen thus.Thereby can prevent the oxidation of target definitely.Under the very little situation of the flow of sputter gas, when perhaps under low pressure carrying out spatter film forming, this is very favourable.The Controlling System of regulating the first and second conductance valves 41 and 42 is stored in the oxygen gas flow rate and the spatter film forming speed of being scheduled under the argon gas flow conditions, as reference data, this spatter film forming speed can be divided into three kinds of patterns (high, in and low-speed mode), be the compound form film forming pattern of high speed metallic forms film forming pattern, low speed and the film forming pattern of middling speed, these patterns depend on oxygen gas flow rate.Between the film stage of predetermined sputter gas velocity, select oxygen gas flow rate and argon gas flow velocity, make it corresponding to high speed metallic forms film forming pattern, control these flow velocitys then, its oxygen gas flow rate that keeps selection and the ratio of argon gas flow velocity are remained unchanged.
Though the argon gas that is included in the sputter air-flow is also discharged by oxygen relief outlet 40, can significantly not change from flowing to the argon gas stream that main exhaust 43 forms near the argon gas stream intake 36.Because the vacuum capability of main venting port 43 is quite big.In constant pressure is 0.3Pa, the argon gas flow velocity is that 100sccm and oxygen gas flow rate are under the condition of 50sccm, the method that reaches this state is, 12 inches cryopump (not shown) are connected in main venting port 43, and 6 inches turbomolecular pumps 33 are connected in oxygen relief outlet 40.
Fig. 5 is the schematic section of second embodiment of the invention forming thin film device.This device is different from film deposition system part shown in Figure 3 and is, is formed in the straight-line type film deposition system as the device chamber 50 of filming chamber.Along with the increase of recent complete processing and the increasing of end liner, often adopt the film deposition system of this straight-line type, in this embodiment, end liner 39 transmits along the direction perpendicular to Fig. 5.Because this device is made to end liner is that fixed and conventional example are different,, can be used in the inline system so it is relatively simple for structure.
When in device chamber 50 shown in Figure 5, on end liner 39, form SiO
2During film, make end liner along transmission direction (perpendicular to the drawing of Fig. 5) access device chamber.To install after chamber 50 is set to the predetermined pressure state, introduce the argon gas of predetermined amount of flow, introduce the oxygen of predetermined amount of flow simultaneously through oxygen intake 38, make that the pressure in the filming chamber remains on steady state through sputter gas intake 36.At this moment, regulate the second conductance valve 52, form the shielding effect of argon gas with the Controlling System (not shown), identical with the situation of device 30 shown in Figure 3.
With the direct supply (not shown) predetermined power is added on the Si target 34, makes negative electrode 35 enter the output waiting status, add the predetermined power of the microwave power supply (not shown) that is connected in microwave gun 37 then, make the radiation of microwave plasma enter the output waiting status.
Under this condition, utilize above-mentioned Controlling System operation cathode power to be carried out to membrane process, and operate microwave power supply and carry out oxidizing process, repeat alternately to carry out these two kinds of technologies.At this moment, form argon gas stream whole the carrying out of two kinds of technologies in the time, this argon gas stream flows to main exhaust 53 near the argon gas intake 36.The oxygen of introducing through oxygen intake 38 is except that by the mixing with argon gas stream as the oxygen of oxygen gas plasma directive end liner 39 of the microwave-excitation of microwave power supply, and mainly exhaust 53 discharges of warp.
That is, both made through oxygen intake 38 and introduced oxygen always, this argon gas stream also can form the gas curtain of shielding oxygen effect, therefore can prevent because the variation of the rate of film build that the target oxidation causes and the reduction of film quality.Therefore, the same with forming thin film device 30 shown in Figure 3, can reach the distinctive quite high rate of film build of metallic forms sedimentation model.The forming thin film device chamber 50 also forming thin film device chamber shown in the image pattern 3 30 is the same, in this device chamber 50, the oxygen relief outlet is configured in the space that is surrounded by holding plate 32 as supplementary unit, can carry out the differential pressure discharging by the emission flow of exhaust 40 of suitable adjusting oxygen and main vent 53; In addition, can regulate oxygen, prevent the oxidation of target reliably; And can regulate the first and second conductance valves 41 and 52 with Controlling System.
Though according to second embodiment, film can be formed on the fixed end liner, like that, can end liner 39 be transmitted along the delivery direction (perpendicular to the direction of Fig. 5) of straight-line type device in the device chamber 30 shown in the image pattern 3 in the film forming while.This method can be carried out sufficient film forming, saves the activity duration, and this is a straight-line type device inherent advantage.
Fig. 6 is a schematic section, illustrates to be used for the film forming straight-line type device of this through type, and this device is the 3rd embodiment of forming thin film device of the present invention.This device is different from forming thin film device part shown in Figure 5 and is, the main vent 63 of device chamber 60 is formed near the bottom side the microwave gun 37.In this straight-line type device, end liner 39 can transmit along the left and right direction of Fig. 6 drawing.
In film deposition system chamber 60, on end liner 39, form SiO in structure shown in Figure 6
2During film, this end liner 39 is transmitted through separates valve 64 and 65, thereby guarantees the predetermined pressure that device is indoor.With after sputter gas intake 36 is introduced the argon gas of predetermined flow velocity, introduce the oxygen of predetermined amount of flow simultaneously through oxygen intake 38, make in the indoor maintenance constant pressure of film deposition system.At this moment, regulate the second conductance valve 62, form the shielding effect of argon gas with the Controlling System (not shown), the same with device chamber 50 shown in Figure 5.
By the direct supply (not shown) predetermined power is added on the Si target 34, makes negative electrode 35 enter the output waiting status, the predetermined power with the microwave power supply (not shown) is added on the microwave gun 37 then, makes the radiation of microwave plasma enter the output waiting status.
When on Fig. 6 left side/when the front end of the end liner 39 that right transmits enters overlapping region between actual sputtering particle flight range that is formed by target 34 and the actual microwave radiation zone that is formed by microwave gun 37, just be carried out to membrane process and carry out oxidizing process by the operation cathode power by the operation microwave power supply, repeat alternately to carry out these two kinds of technologies, every kind of technology is carried out preset time.Subsequently, when passing through above-mentioned overlapping region in the rear end of end liner 39, two kinds of technologies finish.In these two kinds of technologies, form the argon gas stream that flows to main vent 63 from argon gas intake 36.The oxygen of introducing through oxygen intake 38 all mixes with argon gas stream except that by the oxygen of the directive end liner 39 of the microwave-excitation of microwave power supply, and with main vent 63 discharges.
Thereby can prevent because the variation of the rate of film build that the target oxidation causes and the reduction of film quality.As a result, the same with the situation of forming thin film device shown in Figure 5 chamber 50, can guarantee the distinctive quite high rate of film build of metallic forms sedimentation model.In addition, the extraction flow of oxygen venting port 40 and main vent 63 can be regulated, the oxidation of target can be prevented thus reliably with the Controlling System (not shown).
Fig. 7 illustrates the fourth embodiment of the present invention.This embodiment is different from part embodiment illustrated in fig. 5 and is, is configured on the sidewall of filming chamber 50 as the radiation electrode 77 of oxidation source.
In film deposition system chamber 50, on end liner 39, form SiO in structure shown in Figure 7
2During film, after transmitting end liner 39, the pressure that installs the chamber is adjusted to the predetermined pressure state, introduces the argon gas of predetermined flow velocity then through sputter gas intake 36 along delivery direction (perpendicular to the direction of Fig. 7 drawing).Simultaneously, the oxygen by oxygen intake 38 introducing predetermined amount of flow makes it keep constant compression force in the film deposition system chamber.The same with second embodiment shown in Figure 5, can utilize the Controlling System (not shown) to regulate the second conductance valve 52, thereby form the shielding effect of argon oxygen, the same with device 30 shown in Figure 3.Predetermined power with direct supply is added on the Si target 34 then, makes negative electrode 35 enter the output waiting status, and the predetermined power with the high frequency electric source (not shown) is added on the radiation electrode 77 then, makes radiation electrode enter the output waiting status.
Under this condition, be carried out to membrane process by certain hour interval repetitive operation cathode power, operate high frequency electric source simultaneously, carry out oxidizing process continuously.At this moment, carry out two technologies free in formation from flowing to the argon gas stream of main exhaust 53 near the argon gas intake 36.The oxygen of introducing through oxygen intake 38 is by high frequency electric source continuous agitation, thereby produces the plasma body of oxygen on the surface of radiation electrode 77.The front surface that is mapped to end liner 39 by the atomic oxygen or the positively charged ion of plasma generation.Can be successively oxidized in the off time at film-forming process by the middling speed film-forming process at the metallic membrane as thin as a wafer (ultrathin film) that forms on the end liner 39, thus through behind the certain hour, can reach the oxide film of predetermined film thickness.
The gas of introducing from reactant gases intake 38 can comprise O
3Gas.
Fig. 8 illustrates the fifth embodiment of the present invention.This embodiment is different from the 3rd embodiment difference shown in Figure 6 and is, the ion gun 87 that is connected in microwave power supply 83 (not shown) as oxidation source be configured in end liner 39 near; Ion gun 87 can be introduced valve 82 through reactant gases and carry O
2Gas; The magnetic field circuit 80 that is used to produce magnetic field is configured in the back side of end liner 39 grades.
In film deposition system chamber 60, on end liner 39, form SiO in structure shown in Figure 8
2During film, end liner 39 is transported in this chamber through separating valve 64 and 65.After will the chamber of device being set in the predetermined pressure state, introduce the argon gas of predetermined amount of flow through sputter gas intake 36.Introduce the oxygen that valve 82 is introduced predetermined amount of flow by operation oxygen, the pressure in the film deposition system chamber can be adjusted to constant pressure thus.Utilize Controlling System (illustrating) to regulate the second conductance valve 81, form the condition that hydrogen plays shielding effect, this condition is identical with the condition of the 3rd embodiment shown in Figure 6.
The predetermined power of direct supply (not shown) is added on the Si target 34, makes negative electrode enter the output waiting status, the predetermined power with microwave power supply 83 is added on the ion gun 87 then, makes the radiation of ion gun 87 enter the output waiting status.
When on a left side/when the front end of the end liner 39 of right transmission enters overlapping region between actual sputtering particle flight range that is formed by target 34 and the actual ions rifle emitting area that is formed by ion gun 87, operation microwave power supply 83 and ion gun 87 carry out the ECR oxidizing process continuously, repeat film-forming process simultaneously at a certain time interval.At this moment, in the institute of two kinds of technologies is free, form from flowing to the argon gas stream of main vent 53 near the argon gas intake 36.Introduce oxygen that valve 82 introduces by microwave power supply 83 and ion gun 87 continuous agitations through oxygen, thus oxygenous ecr plasma.Produce the front surface of atomic oxygen or oxonium ion directive end liner 39 by ecr plasma.Can be successively oxidized in the timed interval at film-forming process by the middling speed film-forming process at the extreme thin metallic membrane (ultrathin film) that forms on the end liner 39.Thereby after after a while, can obtain having the oxide film of pre-determined thickness.
Fig. 9 illustrates the sixth embodiment of the present invention.This embodiment is different from the 5th embodiment part and is, a pair of oxygen jet that is connected in the outdoor hand-deliver of device stream power supply 90 as source of oxygen be configured in end liner 39 near.Form pore so that gas is sprayed onto on the surface of end liner 39, added alternating-current has gas spout 48 with 38 conduction of two metal tubes on this metal tube.
The same with the 5th embodiment shown in Figure 8, when on a left side/when the front end of the end liner 39 that right transmits enters the actual sputtering particle flight range that is formed by target 34, operate AC power 90 simultaneously and carry out the plasma oxygen metallization processes continuously, and be carried out to membrane process with the at interval interrupted repetitive operation cathode power of certain hour.At this moment, in the time in two kinds of technologies, form the argon gas stream that flows to main exhaust valve 91 from argon gas intake 36.The oxygen of introducing through gas jet 98 is excited by AC power 90 continuously, thereby can produce the plasma body of oxygen, subsequently, and by the atomic oxygen of plasma generation or the front surface of oxonium ion directive end liner 39.With the middling speed film-forming process sedimentary metallic membrane (ultrathin film) as thin as a wafer on the end liner 39 can be in the timed interval at film-forming process successively oxidized, thereby, can obtain to have the sull of definite thickness through after a while.
Though the film that forms according to these embodiment is SiO
2Film, but the invention is not restricted to these examples, much less, the present invention can be used for forming TiO
2Perhaps Ta
2O
5Film.Can make the material of target 34 with Ti or Ta in these situations.
Though can form oxide film according to these embodiment, the invention is not restricted to these examples, can be used for forming nitride film.
[example 1]
In device shown in Figure 3 30, be that 4 inches Si negative electrode is made target 34 and negative electrode 35 with diameter.According to the reference data of storing, Controlling System is sent instruction, will arrive 100sccm by the argon gas flow rate regulation that sputter gas intake 36 is introduced, and will be adjusted to 50sccm by the oxygen gas flow rate that oxygen intake 38 is introduced.Subsequently, 1kW power is added on the Si negative electrode 35, makes negative electrode enter the output waiting status, add the power of 0.5kW then by microwave power supply, make the microwave plasma radiation enter the output waiting status by direct supply.
Under the control of above-mentioned Controlling System, the operation cathode power is carried out to membrane process, and this technique initialization exists, " execution " 0.05s, and " interruption " 0.04s.The operation microwave power supply carries out oxidizing process, sets oxidizing process like this, makes " execution " 0.02s and " interruption " 0.07s.Alternately repeat this two technology (see figure 10)s.At this moment, in one-pass film-forming technology, the film thickness of Si metallic membrane increases by 2 .Then, repeat two technologies, repeat 60min, film thickness is increased to 12 μ m.
According to research, can find out obviously that this film has the amorphous thin film structure to film.In addition,, can find out obviously that this film is fabulous optical thin film (SiO according to the opticmeasurement of this film being carried out at infrared region
2Film), specific refractory power is 1.46, and specific absorbance is 3 * 10
-4
[comparative example 1]
Form film (SiO with the same manner
2Film), just change the flow velocity of introducing oxygen through oxygen intake 38.For the various oxygen gas flow rates of this moment, table 1 illustrates in the device shown in Figure 3 chamber 30 pressure value of measuring at ion vacuumometer position A and B.
[table 1]
| Ar flow velocity (sccm) | O 2Flow velocity (sccm) | I/G A(Pa) | I/G B(Pa) |
| 100 | 0 | 0.28 | 0.1 |
| 100 | 25 | 0.29 | 0.2 |
| 100 | 50 | 0.30 | 0.3 |
| 100 | 100 | 0.40 | 0.5 |
| 100 | 150 | 0.60 | 0.8 |
Fig. 1 illustrates, if oxygen gas flow rate, then can guarantee between ion vacuumometer installation site A and B sufficient pressure reduction is arranged less than 50sccm.This shows, has formed from flowing to the hydrogen stream of main vent 43 near the argon gas intake 36, and argon gas plays sufficient shielding effect to oxygen thus.
Example 1 and comparative example 1 are compared as can be seen, according to the forming thin film method that adopts forming thin film device of the present invention, hydrogen can form shielding effect to oxygen, thereby can carry out thin film deposition with the surface of metallic target, and oxidizing reaction can be penetrated in this sedimentary film, thereby can form oxide film subsequently.That is, because can carry out film forming with the distinctive high film forming speed of metal film forming, so we can say, method of the present invention can be carried out forming thin film with quite high speed.
[example 2]
In device chamber 50 shown in Figure 5, adopt 5 * 16 inches Si negative electrodes to make target 34 and negative electrode 35, the pressure in the spatter film forming chamber 50 remains under the constant pressure of 0.3Pa.Send instruction according to the reference data Controlling System of storing, will introduce 36 argon gas flow rate regulation to 100sccm by sputter gas, and will be through the oxygen gas flow rate (O that comprises 10% volume of oxygen intake 38
3Gas) be adjusted to 50sccm.By direct supply 5KW power is added on the Si negative electrode 35, this negative electrode enters the output waiting status, adds the power of 2.0kW then by microwave power supply, makes the radiation of microwave plasma enter the output waiting status.
Utilize above-mentioned Controlling System operation cathode power, be carried out to membrane process, this film-forming process is set at, " execution " 0.05s, and " interruption " 0.04s.Operate microwave power supply then, carry out oxidizing process, oxidizing process is set like this, feasible " execution " 0.02s, and " interruption " 0.07s.The two kinds of technology (see figure 10)s that hocket, in one-pass film-forming technology, the film thickness of Si metallic membrane increases about 2 , under this condition, at the film forming transmission support (not shown) that transmits end liner 39 simultaneously of shape, transmits with the speed of 1m/min.Can find out obviously that according to precision research this film has amorphous membrane structure to this film.In addition, according to can obviously finding out the optical detecting of this film at infrared region, this film is fabulous optical thin film (SiO
2Film), its specific refractory power is 1.46, and specific absorbance is 3 * 10
-4.
[example 3]
In the device chamber 50 shown in Figure 7, make negative electrode target 34 and negative electrode 35 with 5 * 16 inches Si, spattering filming device chamber 50 keeps under the constant pressure of 0.3Pa.Send instruction according to storing the reference data Controlling System, will arrive 100sccm by the argon gas flow rate regulation of sputter gas intake 36, and will be adjusted to 50sccm through the oxygen gas flow rate that oxygen intake 38 is introduced.Be added on the Si negative electrode 35 by the power of direct supply (not shown), make negative electrode enter the output waiting status, add the power of 2.0kW then by high frequency electric source, make radiation electrode enter the output waiting status 5kW.
Under the control of above-mentioned Controlling System, add the predetermined power (2kW) of high frequency electric source, operate radiation electrode 77 continuously.Operate cathode power then and be carried out to membrane process, this film-forming process is set like this, feasible " execution " 0.05s, and " interruption " (gap) 0.04s.Repeat this circulation (seeing Figure 11), make in one-pass film-forming technology, the film thickness of Si metal increases about 2 , and is the same with example 1.According in the mensuration of infrared region to its compound film optical characteristics, the film that obtains at last is fabulous optical thin film (SiO
2Film), its specific refractory power is 1.46, and specific absorbance is 7 * 10
-4
[example 4]
In above-mentioned device chamber 60 shown in Figure 8, after negative electrode 35 and ion gun 87 enter the output waiting status, under the control of Controlling System, add predetermined electric power (2kW) by microwave power supply 83, operate ion gun 87 continuously.Operate the cathode power of 1kW then, be carried out to membrane process, film-forming process is set like this, feasible " execution " 0.05s, and " interruption " (gap top grade) 0.04s.Repeat this circulation (seeing Figure 12), make in one-pass film-forming technology, the film thickness of Si metallic film increases about 2 .According at infrared region the optical characteristics of this compound film being measured, the film that obtains at last is fabulous optical thin film (SiO
2Film), its specific refractory power is 1.46, and inhaling system is 2 * 10
-4
[example 5]
In device chamber 60 shown in Figure 9, under the control of above-mentioned Controlling System, AC power by 10kHz is added in predetermined power on the pair of metal pipe 38, produce the plasma body of oxygen thus, operate the cathode power of 2kW then, be carried out to membrane process, film-forming process is set like this, feasible " execution " 0.05s, and " interruption " (gap) 0.04s.Repeat this circulation, make that in one-pass film-forming technology, the film thickness of Si metallic membrane increases by 3 .According in the mensuration of infrared region to the optical characteristics of its compound film, the film that obtains at last is fabulous optical thin film (SiO
2Film), its specific refractory power is 1.46, and the extinction system is 6 * 10
-4, continue and repeatedly kick into capable film-forming process 40min, can make film thickness be increased to 12 μ m.
[comparative example 2]
Change " execution "/" interruption " time (" execution " 0.05s/ " interruption " 0.04s) of cathode power in the example 5, be set at always " execution ", the compound film that obtains at last has very big light absorptive, so the transparency that can not obtain requiring.Reason be the successive sedimentation of metal sputtering particle on end liner, can not obtain complete oxidation subsequently, this mode is different from the mode in the example 5, film-forming process intermittently carries out in example 5.
[comparative example 3]
Change " execution "/" interruption " time (" execution " 0.05s/ " interruption " 0.04s) of cathode power in the example 5, " execution " time of making is 0.5s.Because in one-pass film-forming technology, the film thickness of Si metallic membrane increases about 30 , therefore, waiting its specific refractory power of film that obtains is 1.52, and the extinction system is 8 * 10
-2, this shows that light absorptive is very big.Reason metal sputtering particle is big more than example 5, and can not obtain oxidation subsequently, so SiO
2Film and metal Si film are mixed in together.
[comparative example 4]
Change the power (2kW) that is added in the example 5 on the cathode power, cathode power is changed to 0.5kW.In addition, change " execution "/" interruption " time (" execution " 0.05s/ " interruption " 0.04s) of cathode power, " execution " time of making is 0.2s, and " interruption " time is 0.04s.In addition, carry out the forming thin film of 40min continuously, in one-pass film-forming technology, the film thickness of Si metallic membrane increases about 3 .According to the optical characteristics of compound film being measured the blooming (SiO that obtains at last at infrared region
2Film) be transparent blooming, its specific refractory power is 1.46, and inhaling system is 4 * 10
-4
Yet after film thickness is increased to 5.0 μ m, can find out obviously that it is extremely slow that film forming speed becomes.Therefore can obtain conclusion, near sputtering target, have a certain amount of oxygen.When sputtering power strengthened, the sputter that is produced by argon gas strengthened, even the thin layer on the surface of target is subjected to oxidation.Therefore, compound film is always removed continuously, reaches the forming thin film state of metal mode thus.Yet when power was very low, sputter was just carried out with so-called oxide mode, because the surface of target is in oxidized state always.As a result, the film that obtains is transparent SiO
2Film reduces such shortcoming yet rate of film build occurs.
[example 6]
Change the power (2kW) that is added in the example 5 on the cathode power, cathode power is become 4.0kW.In addition, change " executions "/" interruption " time (" execution " 0.05s/ " interruption " 0.04s) of cathode power, feasible " execution " time is 0.025s, and thrusts " time is 0.065s.In addition, carry out the forming thin film of 40min continuously, make that the film thickness of Si metallic membrane increases about 3 in forming thin film technology.According in the mensuration of infrared region to this compound film optical characteristics, the blooming (SiO that obtains at last
2Film) be transparent blooming, its specific refractory power is 1.46, and the extinction system is 5 * 10
-4, carry out the film-forming process of 40min, can make film thickness reach 24 μ m.
The result shows, rate of film build increases twice than the speed in the example 5, because in one-pass film-forming technology, the thickness of film is 3 , this means and to reach sufficient oxidation, in addition, " continuing " time (0.05s) of one-time process is example 5 " continue " time half of (0.025s), and the each film thickness that forms of this expression is 3 .
The present invention is very important in the field that needs form the film optical thin film at a high speed.
The explanation of Ref. No.
10,20,30,50 and 60: film deposition system
14,24 and 34: target
15,25 and 35: sputter cathode
16,26 and 36: the sputter gas intake
17,27 and 37: microwave excited plasma generator (microwave gun)
18,28 and 38: the reacting gas intake
19,29 and 39: end liner
40: the reacting gas exhaust outlet
41: first-class pilot valve (flow control valve)
42,52,62,81 and 91: second pilot valve (flow control valve)
43,53 and 63: main vent
77: radiation electrode
82: oxygen is introduced valve
83: microwave power supply
87: ion gun
Claims (8)
1. forming thin film device, be included in raw material delivery source in the same vacuum chamber, be spatter film forming source and reactant gases delivery source, make this two provenance facing to end liner, wherein find time the main vent of vacuum chamber near the configuration of the reactant gases delivery source in these two sources, this forming thin film device also comprises Controlling System, and this Controlling System executable operations has the reaction process of reactant gases delivery source of reactant gases intake and reactant gases venting port and the film-forming process in spatter film forming source that operation has the sputter gas intake.
2. forming thin film device as claimed in claim 1 is characterized in that, Controlling System any technology in reaction process and film-forming process finishes the back from another kind of technology, alternately carries out two kinds of technologies thus.
3. forming thin film device as claimed in claim 1 is characterized in that, when keeping reaction process, Controlling System repeats film-forming process at interval by certain hour.
4. as each described forming thin film device among the claim 1-3, it is characterized in that, the reactant gases delivery source is made up of the reactant gases plasma generator, and the main vent and the reactant gases venting port that dispose near this plasma body producer have flow control valve respectively.
5. forming thin film method with the described forming thin film device of claim 2, it is characterized in that, between film stage, carry the sputter gas and the reactant gases of two raw material delivery source continuously, finish the back from another kind of technology by any technology in film-forming process and reaction process, alternately carry out film-forming process that is undertaken by operation spatter film forming source and the reaction process that is undertaken by the operant response gas delivery source thus.
6. forming thin film method with the described forming thin film device of claim 3, it is characterized in that, continue to carry out the film-forming process that is undertaken by operation spatter film forming source, repeat the reaction process that is undertaken by the operant response gas delivery source by certain hour at interval.
7. forming thin film method, it is characterized in that, Controlling System as each described forming thin film device among the claim 1-3 is stored in the reactant gases flow velocity and the spatter film forming speed of being scheduled under the sputter gas flow velocity degree condition, as reference data, this spatter film forming speed comprises height, in and three kinds of patterns of low speed, it is high speed metallic forms film forming pattern, low speed compound form film forming pattern and middling speed film forming pattern, can select these patterns according to the reactant gases flow velocity, under the sputter gas flow velocity degree condition of being scheduled between film stage, selection is corresponding to the reactant gases flow velocity and the sputter gas flow velocity of high speed metallic forms film forming pattern, control this two kinds of gas flow rates then, the ratio that feasible these two kinds of gas flow rates of selecting are reactant gases flow velocity and sputter gas flow velocity remains unchanged, can be chosen to membrane process thus than the more dominant condition of reaction process, perhaps selective reaction technology is than the more dominant condition of film-forming process.
8. as each described forming thin film method among the claim 5-7, it is characterized in that, each time film-forming process in forming thin film technology, the growth of film thickness is less than 20 .
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| CN101798675B (en) * | 2010-04-07 | 2011-09-28 | 苏州羿日新能源有限公司 | Cathode device for carrying out linear reactive sputtering film coating by utilizing electric-field confinded plasmas |
| TWI565527B (en) * | 2011-12-26 | 2017-01-11 | 鴻海精密工業股份有限公司 | Plasma film deposition device |
| CN108531871A (en) * | 2018-07-09 | 2018-09-14 | 山东三齐能源有限公司 | A kind of continuous coating sputter system |
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| CN1046356A (en) * | 1990-03-22 | 1990-10-24 | 四川大学 | The preparation method of film of multicomponent metal oxide |
| CN1350284A (en) * | 2000-10-04 | 2002-05-22 | Eni技术公司 | System and method for controlling passive bipolar electric arc |
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| CN1046356A (en) * | 1990-03-22 | 1990-10-24 | 四川大学 | The preparation method of film of multicomponent metal oxide |
| CN1350284A (en) * | 2000-10-04 | 2002-05-22 | Eni技术公司 | System and method for controlling passive bipolar electric arc |
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