CN100365947C - Heat backup system and method for radio-frequency power amplifier - Google Patents
Heat backup system and method for radio-frequency power amplifier Download PDFInfo
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- CN100365947C CN100365947C CNB2004100776875A CN200410077687A CN100365947C CN 100365947 C CN100365947 C CN 100365947C CN B2004100776875 A CNB2004100776875 A CN B2004100776875A CN 200410077687 A CN200410077687 A CN 200410077687A CN 100365947 C CN100365947 C CN 100365947C
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Abstract
The present invention relates to a warm backup system and a method for a radio-frequency power amplifier. In N sectors of the system, each sector comprises a power amplifier and a pair of backward-forward microwavesingle-pole double-throw switches; the system is also provided with a backup amplifier which is the same as the power amplifier, and the sectors of the system jointly use one backup power amplifier. When the failure of the power amplifier of such sector in the system occurs, the backward-forward single-pole double-throw switches of the sector are switched so as to enable the backup power amplifier to immediately replace the work of the power amplifier which generates the failure without stopping power and stopping a machine, and each sector has very high isolation.
Description
Technical field
The present invention relates to communication technical field, relate in particular to N+1 hot backup system and its implementation of the radio-frequency power amplifier that in wireless access and microwave system, adopts the realization of single-pole double throw microwave switch.
Background technology
Along with the development of mobile communication, radio-frequency power amplifier is widely used in wireless access and the microwave system, carries out the amplification of signal, is an important components in system.Insert in the multicarrier system at cdma wireless, if the power amplifier of certain sector has fault, the cellphone subscriber of this sector does not just get through phone, to the service quality of mobile communication carrier be had a negative impact, so cdma wireless access multicarrier system has proposed very high requirement to the stability and the reliability of power amplifier.But power amplifier is operated in big electric current, high-voltage state, and thermal environment is also bad, easily goes wrong.So want the Hot Spare technology of developed horse power amplifier, to improve stability.
Be example all below with three sectors.As shown in Figure 1, conventional technology is that each sector all has at least one power amplifier, and any one power amplifier all is the input signal that only amplifies this sector, and irrelevant with other sector signals, it doesn't matter between the power amplifier, isolates mutually.The input signal of IN1 arrives the antenna S1 of certain sector after power amplifier PA1 amplifies, the input signal of IN2 arrives S2 after power amplifier PA2 amplifies, same, and the input signal of IN3 arrives S3 after power amplifier PA3 amplifies.If PA1 damages, then this sector no signal output, all terminal mobile subscribers of this sector can't connecting system.Can damage the prestige of mobile operator like this, the prestige to equipment manufacturers has adverse influence equally.The scheme of the no heat backup device of this routine requires power amplifier that very high reliability is arranged.
Summary of the invention
Technical problem to be solved by this invention is: a kind of system with warm standby function of many sectors radio-frequency power amplifier is provided, and this system guarantees isolation index excellence between the sector when having solved many sectors radio-frequency power amplifier Hot Spare problem.
Another purpose of the present invention is: a kind of method of utilizing the microwave single-pole double-throw switch (SPDT) to realize the Hot Spare of N sector radio-frequency power amplifier is provided.
The present invention solves the problems of the technologies described above the technical scheme that is adopted to be:
A kind of hot backup system of radio-frequency power amplifier comprises N power amplifier and a backup amplifier identical with described power amplifier, comprises that also N is to the microwave single-pole double-throw switch (SPDT); Each described power amplifier input and the port one of the preposition microwave single-pole double-throw switch (SPDT) in a pair of microwave single-pole double-throw switch (SPDT) join, and the port one of the rearmounted microwave single-pole double-throw switch (SPDT) in output and a pair of microwave single-pole double-throw switch (SPDT) joins; And
The control port of preposition microwave single-pole double-throw switch (SPDT) is the input of microwave signal; The control port of rearmounted microwave single-pole double-throw switch (SPDT) is the output of microwave signal; And
The port two that described N splits the preposition microwave single-pole double-throw switch (SPDT) in the Central Shanxi Plain is connected to the input of described backup power amplifier jointly; The port two that described N splits the rearmounted microwave single-pole double-throw switch (SPDT) in the Central Shanxi Plain is connected to the output of described backup power amplifier jointly;
Wherein, N is a sector number, is the positive integer greater than 0.
Described system, wherein: described microwave single-pole double-throw switch (SPDT) comprises 3 sections transmission lines and 2 switching devices; Described first transmission line, second transmission line and the 3rd transmission line are connected in series in proper order, and the first transmission line head end is that port one, the three line end is that port two, the first line end and the second transmission line head end intersection are control end;
First switching device is connected between described port one and the ground; Be connected the second switch device between described second line end and the 3rd transmission line head end intersection and the ground.
Described system, wherein: described transmission line is 1/4 wavelength line; The characteristic impedance of described transmission line is same numerical value.
Described system is characterized in that: described switching device adopts PIN diode.
A kind of method of N+1 Hot Spare of radio-frequency power amplifier is used for N sector of wireless access and microwave system, and each sector comprises the microwave single-pole double-throw switch (SPDT) that an identical main power amplifier and a pair of and main power amplifier are connected; Also comprise a backup power amplifier that each sector is shared; Described method comprises the steps:
A, the input of the described main power amplifier of each sector and the port one of the preposition microwave single-pole double-throw switch (SPDT) in a pair of microwave single-pole double-throw switch (SPDT) are joined, and the port one of output and rearmounted microwave single-pole double-throw switch (SPDT) joins; And input signal inserts from the control port of preposition microwave single-pole double-throw switch (SPDT), and the control port of rearmounted microwave single-pole double-throw switch (SPDT) is connected with antenna system; And the preposition microwave single-pole double-throw switch (SPDT) port two that described N splits the Central Shanxi Plain is connected to the input of described backup power amplifier jointly; The port two that described N splits the rearmounted microwave single-pole double-throw switch (SPDT) in the Central Shanxi Plain is connected to the output of described backup power amplifier jointly;
B, described microwave single-pole double-throw switch (SPDT) is set, makes each main power amplifier conducting, the backup power amplifier opens circuit, and make the power amplifier of each sector be in normal operating conditions, and described backup power amplifier is in holding state;
C, when the described power amplifier of a certain sector breaks down, described microwave single-pole double-throw switch (SPDT) is set, make that described fault power amplifier opens circuit, the conducting of described backup power amplifier, make described backup power amplifier replace described fault power amplifier; Wherein, N is a sector number, is the positive integer greater than 0.
Beneficial effect of the present invention is: because all there is a power amplifier each sector in the hot backup system of the present invention, and the power amplifier that also has a backup in the system, to be that system is common do not belong to any sector with this backup power amplifier, therefore, when the power amplifier of one of them sector breaks down, the power amplifier of backup can substitute out of order power amplifier work and realize backup functionality under the situation of shutting down that do not have a power failure immediately; Owing to heat backup device of the present invention, any one in its N power amplifier all only amplified the signal of a sector, so the isolation between the sector can be done finely, satisfies actual user demand again.Simultaneously, because the microwave single-pole double-throw switch (SPDT) topological structure that the present invention adopts is simple, and each transmission line of formation microwave single-pole double-throw switch (SPDT) can adopt microstrip line or strip line on the PCB to realize that this has been very ripe PCB manufacturing process; And each switching device can adopt the Microwave PIN diode, and PIN diode also is very ripe device, is easy to buying; So advantage that the present invention has also that circuit is simple, technical maturity, cost are low, be easy to realize.
Description of drawings
Fig. 1 is the no Hot Spare of routine and three sector power amplifiers of mutual-aid function
The microwave single-pole double-throw switch (SPDT) topological structure that Fig. 2 adopts for the present invention
Fig. 3 is power amplifier 3+1 heat backup device of the present invention structural representation
Embodiment
With embodiment the present invention is described in further detail with reference to the accompanying drawings below:
Power amplifier hot backup system of the present invention can comprise N sector, because three sector configuration that adopt in the practical application, and convenient narration, therefore following is example with N=3 more, and how radio-frequency (RF) power amplification that three sectors are described realizes the 3+1 warm standby function.
As shown in Figure 3, power amplifier hot backup system of the present invention has three sectors, and there is a power amplifier each sector, that is: PA1 is the power amplifier of sector one, and PA2 is the power amplifier of sector two, and PA3 is the power amplifier of sector three; Also has the backup power amplifier PA identical that each sector is shared in the system with power amplifier; And all there is a pair of microwave single-pole double-throw switch (SPDT) that is made of transmission line and switching device each sector, as shown in Figure 3: constitute the preposition microwave single-pole double-throw switch (SPDT) of sector one by transmission line A, C, E and switching device SW1, SW3, and constitute the rearmounted microwave single-pole double-throw switch (SPDT) of sector one by transmission line B, D, F and switching device SW2, SW4; Constitute the preposition microwave single-pole double-throw switch (SPDT) of sector two by transmission line K, I, G and switching device SW7, SW5, and constitute the rearmounted microwave single-pole double-throw switch (SPDT) of sector two by transmission line L, J, H and switching device SW8, SW6; Constitute the preposition microwave single-pole double-throw switch (SPDT) of sector three by transmission line O, M, Q and switching device SW11, SW9, and constitute the rearmounted microwave single-pole double-throw switch (SPDT) of sector three by transmission line P, N, R and switching device SW12, SW10.Therefore, system of the present invention includes 3 power amplifiers and 3 pairs of microwave single-pole double-throw switch (SPDT)s, its connected mode is: the port one of the preposition microwave single-pole double-throw switch (SPDT) in the input of each power amplifier and a pair of microwave single-pole double-throw switch (SPDT) joins, and the port one of the rearmounted microwave single-pole double-throw switch (SPDT) in output and a pair of microwave single-pole double-throw switch (SPDT) joins; And the control port of preposition microwave single-pole double-throw switch (SPDT) is the input IN of microwave signal; The control port of rearmounted microwave single-pole double-throw switch (SPDT) is the output OUT of microwave signal, connects antenna system; And the port two that described N splits the preposition microwave single-pole double-throw switch (SPDT) in the Central Shanxi Plain is connected to the input of described backup power amplifier PA jointly; The port two that N splits the rearmounted microwave single-pole double-throw switch (SPDT) in the Central Shanxi Plain is connected to the output of described backup power amplifier PA jointly.
Described each microwave single-pole double-throw switch (SPDT) is made of 3 sections transmission lines and 2 switching devices, its topological structure is that example illustrates with sector one preposition microwave switch, as shown in Figure 2: the first transmission line A, the second transmission line C and the 3rd transmission line E are connected in series in proper order, that is: the end of the first transmission line A links to each other with the head end of the second transmission line C, the end of the second transmission line C links to each other with the head end of the 3rd transmission line E, and the head end of the first transmission line A is a port one, the end of the 3rd transmission line E is that port two, the first transmission line A and the second transmission line E intersection are control end; The first switching device SW1 is connected between described port one and the ground, and second switch device SW3 is connected between the second transmission line C and the 3rd transmission line E intersection and the ground.The transmission line that constitutes microwave switch is 1/4 wavelength line; The characteristic impedance of described transmission line is Z0.According to the feature of 1/4 wavelength line as can be known: when the SW1 closure, when SW3 disconnected, the end of the first transmission line A was considered as open end over the ground, so control end and port one isolation, and communicate with port two, the microwave signal that inserts from control end can only be transferred to port two by transmission line C and transmission line E; And when the SW3 closure, when SW1 disconnected, the head end of the second transmission line C was considered as open end over the ground, so control end and port two isolation, and communicated with port one, and the microwave signal that inserts from control end can be transferred to port one by transmission line A; Form the function of single-pole double throw thus.The topological structure of this microwave single-pole double-throw switch (SPDT) is simple and practical.
Whole system shown in Figure 3 has four kinds of states:
Three power amplifier PA1, the PA2 that first kind of state is three sectors, PA3 operate as normal, backup power amplifier PA do not work.SW3, SW4, SW5, SW6, SW9, SW10 closure are set this moment, SW1, SW2, SW7, SW8, SW11, SW12 disconnect, principle according to above-mentioned microwave single-pole double-throw switch (SPDT), input signal IN1, IN2, IN3, enter transmission line A, K, O respectively, after power amplifier PA1, PA2, PA3 amplify, again through transmission line B, L, P output.Aspect input, because SW3, SW5, the SW9 short circuit ground connection of each preposition microwave switch be open circuit through 1/4 guide wavelength impedance conversion to PA input respectively, so power amplifier PA do not have input signal; Aspect output,, therefore there is not output signal to scurry PA because SW4, SW6, the SW10 short circuit ground connection of each rearmounted microwave switch are open circuit through 1/4 guide wavelength impedance conversion to PA output respectively yet.
Second kind of PA2, PA3 operate as normal, backup power amplifier PA replacement PA1 work that state is sector one power amplifier PA1 damage, sector two, three.SW1, SW2, SW5, SW6, SW9, SW10 closure are set this moment, and SW3, SW4, SW7, SW8, SW11, SW12 disconnect, and input signal IN1 enters transmission line C, E, after backup power amplifier PA amplifies, export through transmission line F, D again.At the IN1 input, because SW1 short circuit ground connection, be open circuit, so IN1 can not pass through from transmission line A through 1/4 guide wavelength impedance conversion to input, power amplifier PA1 does not have input signal; , therefore directly export through transmission line F, B, and can not flow into PA1 because SW2 short circuit ground connection is open circuit through 1/4 guide wavelength impedance conversion to output at output through transmission line B through the PA amplifying signal.
The third state is that power amplifier PA2 damage, the PA1 of sector one, three, PA3 operate as normal, the backup power amplifier PA of sector two replaces PA2 work.SW3, SW4, SW7, SW8, SW9, SW10 closure are set this moment, and SW1, SW2, SW5, SW6, SW11, SW12 disconnect, and its operation principle and second kind of state are identical.
The 4th kind of power amplifier PA3 damage, the PA1 of sector one, two, PA2 operate as normal, the backup power amplifier PA replacement PA3 work that state is sector three.SW3, SW4, SW5, SW6, SW11, SW12 closure are set this moment, and SW1, SW2, SW7, SW8, SW9, SW10 disconnect, and its operation principle and second kind of state are identical.
The above, if first kind of state as the normal condition of power amplifier, then second kind, the third, the 4th kind of state be equivalent to Hot Spare.Power amplifier PA is the backup of power amplifier PA1, PA2, PA3; do not belong to any sector; when the power amplifier of one of them sector breaks down; switch the microwave single-pole double-throw switch (SPDT) of this sector; the power amplifier PA that makes backup is under the situation of shutting down that do not have a power failure; substitute the power amplifier work of breaking down immediately, realized Hot Spare.What is more important, any one among four power amplifier PA1, PA2, PA3, the PA all only amplified the signal of a sector when work, so adopt this system, the isolation index between the sector can be done very highly.
In actual applications, the microwave switch that the switching device in the microwave single-pole double-throw switch (SPDT) can adopt the Microwave PIN diode to constitute, but be not limited to the Microwave PIN diode, PIN diode is very ripe device, and is with low cost, be easy to buying; And each transmission line that constitutes the microwave single-pole double-throw switch (SPDT) can adopt microstrip line or the strip line on the PCB to realize that this has been very ripe PCB manufacturing process; Simultaneously, in actual applications, the not enough problem of the 3rd transmission line electrical length of preposition and rearmounted microwave switch when solving many sectors, it is (1/4+n/2) wavelength line that the 3rd transmission line of microwave switch can adopt electrical length, wherein n is 〉=0 positive integer, as shown in Figure 3, can to adopt electrical length be 3/4 transmission line for transmission line Q and transmission line R.This shows that radio-frequency (RF) power amplification hot backup system of the present invention has also that circuit is simple, cost is low, technical maturity, practical advantage.
Be understandable that, for those of ordinary skills, can be equal to replacement or change according to technical scheme of the present invention and inventive concept thereof, and all these changes or replacement all should belong to the protection range of the appended claim of the present invention.
Claims (5)
1. the hot backup system of a radio-frequency power amplifier comprises N power amplifier and a backup amplifier identical with described power amplifier; It is characterized in that: comprise that also N is to the microwave single-pole double-throw switch (SPDT); Each described power amplifier input and the port one of the preposition microwave single-pole double-throw switch (SPDT) in a pair of microwave single-pole double-throw switch (SPDT) join, and the port one of the rearmounted microwave single-pole double-throw switch (SPDT) in output and a pair of microwave single-pole double-throw switch (SPDT) joins; And
The control port of preposition microwave single-pole double-throw switch (SPDT) is the input of microwave signal; The control port of rearmounted microwave single-pole double-throw switch (SPDT) is the output of microwave signal; And
The port two that described N splits the preposition microwave single-pole double-throw switch (SPDT) in the Central Shanxi Plain is connected to the input of described backup power amplifier jointly; The port two that described N splits the rearmounted microwave single-pole double-throw switch (SPDT) in the Central Shanxi Plain is connected to the output of described backup power amplifier jointly;
Wherein, N is a sector number, is the positive integer greater than 0.
2. system according to claim 1 is characterized in that: described microwave single-pole double-throw switch (SPDT) comprises 3 sections transmission lines and 2 switching devices;
Described first transmission line, second transmission line and the 3rd transmission line are connected in series in proper order, and the first transmission line head end is that port one, the three line end is that port two, the first line end and the second transmission line head end intersection are control end;
First switching device is connected between described port one and the ground; Be connected the second switch device between described second line end and the 3rd transmission line head end intersection and the ground.
3. system according to claim 2 is characterized in that: described transmission line is 1/4 wavelength line; The characteristic impedance of described transmission line is same numerical value.
4. according to claim 2 or 3 described systems, it is characterized in that: described switching device adopts PIN diode.
5. the method for the N+1 Hot Spare of a radio-frequency power amplifier is used for N sector of wireless access and microwave system, and each sector comprises the microwave single-pole double-throw switch (SPDT) that an identical main power amplifier and a pair of and main power amplifier are connected; Also comprise a backup power amplifier that each sector is shared; Described method comprises the steps:
A, the input of the described main power amplifier of each sector and the port one of the preposition microwave single-pole double-throw switch (SPDT) in a pair of microwave single-pole double-throw switch (SPDT) are joined, and the port one of output and rearmounted microwave single-pole double-throw switch (SPDT) joins; And input signal inserts from the control port of preposition microwave single-pole double-throw switch (SPDT), and the control port of rearmounted microwave single-pole double-throw switch (SPDT) is connected with antenna system; And the preposition microwave single-pole double-throw switch (SPDT) port two that described N splits the Central Shanxi Plain is connected to the input of described backup power amplifier jointly; The port two that described N splits the rearmounted microwave single-pole double-throw switch (SPDT) in the Central Shanxi Plain is connected to the output of described backup power amplifier jointly;
B, described microwave single-pole double-throw switch (SPDT) is set, makes each main power amplifier conducting, the backup power amplifier opens circuit, and make the power amplifier of each sector be in normal operating conditions, and described backup power amplifier is in holding state;
C, when the described power amplifier of a certain sector breaks down, described microwave single-pole double-throw switch (SPDT) is set, make that described fault power amplifier opens circuit, the conducting of described backup power amplifier, make described backup power amplifier replace described fault power amplifier;
Wherein, N is a sector number, is the positive integer greater than 0.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100776875A CN100365947C (en) | 2004-12-17 | 2004-12-17 | Heat backup system and method for radio-frequency power amplifier |
| PCT/CN2005/001969 WO2006053506A1 (en) | 2004-11-19 | 2005-11-21 | The radio frequency power amplifier hot standby system and the microwave switch and the backup method |
| BRPI0518340A BRPI0518340B1 (en) | 2004-11-19 | 2005-11-21 | hot standby redundancy system and method for radio frequency power amplifier |
| US11/750,435 US7525396B2 (en) | 2004-11-19 | 2007-05-18 | System, microwave switch and method for hot standby of radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100776875A CN100365947C (en) | 2004-12-17 | 2004-12-17 | Heat backup system and method for radio-frequency power amplifier |
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| CN1790933A CN1790933A (en) | 2006-06-21 |
| CN100365947C true CN100365947C (en) | 2008-01-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100776875A Active CN100365947C (en) | 2004-11-19 | 2004-12-17 | Heat backup system and method for radio-frequency power amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103916144B (en) * | 2013-01-05 | 2016-09-28 | 北京北广科技股份有限公司 | Very low frequency long-wave transmitter power amplifier unit self-adapting correction method and device |
| CN110620593B (en) * | 2019-09-27 | 2021-04-06 | 北京北广科技股份有限公司 | Signalling equipment based on double-channel resource allocation |
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| CN1492606A (en) * | 2003-09-28 | 2004-04-28 | 中兴通讯股份有限公司 | High power linear transmitting-receiving switch circuit |
| CN1523907A (en) * | 2003-02-20 | 2004-08-25 | 华为技术有限公司 | A method for backup of power amplifier and equipment thereof |
| WO2004098117A2 (en) * | 2003-04-29 | 2004-11-11 | Mediacell Licensing Corporation | Distributed gain network |
| CN1780044A (en) * | 2004-11-19 | 2006-05-31 | 华为技术有限公司 | Microwave switch and power amplifier thermal back-up, its mutual system and realization thereof |
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- 2004-12-17 CN CNB2004100776875A patent/CN100365947C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1523907A (en) * | 2003-02-20 | 2004-08-25 | 华为技术有限公司 | A method for backup of power amplifier and equipment thereof |
| WO2004098117A2 (en) * | 2003-04-29 | 2004-11-11 | Mediacell Licensing Corporation | Distributed gain network |
| CN1492606A (en) * | 2003-09-28 | 2004-04-28 | 中兴通讯股份有限公司 | High power linear transmitting-receiving switch circuit |
| CN1780044A (en) * | 2004-11-19 | 2006-05-31 | 华为技术有限公司 | Microwave switch and power amplifier thermal back-up, its mutual system and realization thereof |
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