CN100365510C - Method of making metal pattern - Google Patents
Method of making metal pattern Download PDFInfo
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- CN100365510C CN100365510C CNB031015751A CN03101575A CN100365510C CN 100365510 C CN100365510 C CN 100365510C CN B031015751 A CNB031015751 A CN B031015751A CN 03101575 A CN03101575 A CN 03101575A CN 100365510 C CN100365510 C CN 100365510C
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- metal
- making
- substrate surface
- energy irradiation
- metal pattern
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Abstract
The present invention provides a method for making metal patterns on a liquid crystal display panel. The liquid crystal display panel comprises a base plate and a metal layer arranged on the surface of the base plate. The method has the steps: firstly, irradiating the surface of the base plate by high energy to reduce the surface tension of the metal layer; secondly, etching the surface of the base plate in a wet etching mode to remove partial metal layer so as to finish making metal patterns.
Description
Technical field
The invention provides a kind of method of making metal pattern, refer to a kind of method that can effectively reduce the making metal pattern of etch residues especially.
Background technology
In the technology of LCD panel of thin-film transistor, the good corrupt quality influence for liquid crystal panel that metal pattern is made is very big.For example, in the technology of liquid crystal panel, need carry out several photetching program, with the stacked structures such as grid, source/drain and contact hole that define thin film transistor (TFT) respectively.In order to improve the covering power of follow-up dielectric sedimentary deposit, usually when these metal patterns of definition, all can avoid in etch process, making metal pattern to produce the situation of undercutting (undercut) as far as possible, in order to avoid the metal fragment after the etching residues in the hole of metal pattern below, influence the electrical performance of thin film transistor (TFT).Therefore at present industry is the side wall construction that forms taper when making metal pattern, though also metal pattern to form good platform (taper) shape preferable.
Known when the enterprising row metal layer of glass substrate etch process, in order to form good platform shape, take immersion type (Dip) wet etching process, being about to glass substrate is immersed in the etching solution in the mode of soaking, make chemical agent and metallic film in the etching solution produce chemical reaction, to remove the metal level that is not covered, define the metal pattern on the glass substrate by mask layer.Carry out wet etching with immersion way, no doubt can form good etching shape, yet its shortcoming be the metal pattern density on the glass substrate have dredge have close, so as easy as rolling off a log generation load effect (loading effect), make that chemical agent and metal level reaction are uneven in the etching solution, cause metal residual that part should get rid of at substrate surface.Especially in the metal pattern live width than stenosis owing to need etch away a large amount of metals, but tend to cause a large amount of metal residuals to make substrate produce defective, and then influence the product yield because etching is inhomogeneous.
Therefore in the manufacturing process of glass substrate, how to solve the metal residual problem that substrate etching inequality causes, real is current important topic.
Summary of the invention
The engraving method that the purpose of this invention is to provide a kind of metal pattern of liquid crystal display substrate is to solve the problem of metal residual.
The invention provides a kind of method for making of metal pattern of display panels, this display panels includes substrate, and the metal level of being located at this substrate surface, and this method for making includes the following step:
Carry out high-energy irradiation at this substrate surface, to reduce the surface tension of this metal level; And
Carry out wet etching process, with this metal level of removing part and form this metal pattern,
Wherein, this metal pattern is intended for lead,
This metal level is by formed composite beds of metal material such as molybdenum/aluminium/molybdenum or molybdenum/aluminium alloys.
In an embodiment of the present invention, described display panels also includes the part surface that mask layer is covered in this metal level, to be used for defining this metal pattern.
The present invention also provides a kind of method that reduces etch residues, and it includes the following step:
Glass substrate is provided, and this glass baseplate surface includes metal level;
Carry out high-energy irradiation in this substrate surface, to reduce the surface tension of this metal level; And
Carry out wet etching process, with this metal level of removing part and form metal pattern,
Wherein, this metal pattern is intended for lead,
This metal level is by formed composite beds of metal material such as molybdenum/aluminium/molybdenum or molybdenum/aluminium alloys.
In an embodiment of the present invention, this glass substrate also includes the part surface that mask layer is covered in this metal level in the method for above-mentioned minimizing etch residues, to be used for defining this metal pattern.
In a preferred embodiment of the present invention, this method is to utilize Excimer UV light (excimer UV) to shine glass baseplate surface metal-layer before etch process, to reduce layer on surface of metal tension force, carry out wet etching process afterwards again, remove this metal level of part and form metal pattern.
Because the present invention utilizes high-energy light, first irradiated substrate before carrying out etch process, the surface tension of substrate surface metal level is reduced, so when carrying out etch process, the chemical agent in the etching solution just can be not excessive because of surface tension, and produce excessive contact angle with the metal surface, cause the etching inequality, produce the situation of metal residue,, improve the shortcoming of known metal etch process so can effectively promote the efficient of etch process.
Description of drawings
Fig. 1 inspects figure for glass substrate after the Excimer UV rayed behind etch process.
Embodiment
In preferred embodiment of the present invention, at first on glass substrate, form molybdenum/aluminium/sodium/molybdenum composite metal layer, or molybdenum/Al-alloy metal layer, and cover the part surface of this metal level with mask layer, then with this glass baseplate surface of Excimer UV rayed of wavelength 172nm, carry out the immersion type wet etching again, remove the part metals layer, to form metal pattern.In the present embodiment simultaneously, the metal pattern through being etched after the Excimer UV rayed has the taper side wall construction, can form good platform shape.
Because in the metal pattern etch process; adopt the immersion type wet etching process to cause etching incomplete easily; wherein one is former because the surface tension of metal level is excessive on the substrate; cause that the chemical agent in the etching solution and metal surface form excessive contact angle in etching process; and can't the uniform etching metal; particularly on substrate the metal live width than stenosis; position as space, backguy district and hole between source electrode and drain electrode; because this type of zone need etch away a large amount of metals; regular meeting has metal residue to form, thereby influences the substrate quality.
Please refer to table 1, table 1 is in preferred embodiment of the present invention, the surface tension comparison sheet of the molybdenum/aluminium on the substrate/sodium/molybdenum composite metal layer or molybdenum/Al-alloy metal layer after with Excimer UV light (excimer ultraviolet) pre-irradiation.As shown in Table 1, substrate is divided under the situation of nine blocks and carries out the Excimer UV rayed, the surface tension of the most of block of metal level all obviously descends on the substrate, and on average decline degree reaches 35%, hence one can see that comes the treatment substrate surface with high-energy irradiation, can effectively reduce the surface tension of substrate surface metal level really.
Table 1 glass substrate of the present invention utilizes the surface tension comparison sheet before and after the Excimer UV rayed.
| The zone | ?P1 | ?P2 | ?P3 | ?P4 | ?P5 | ?P6 | ?P7 | ?P8 | ?P9 | Mean value | The improvement rate |
| ?NO?UV | ?6.4 | ?9.3 | ?5.6 | ?4.6 | ?15.5 | ?12.9 | ?6.2 | ?16.1 | ?7.7 | ?9.37 | ?35.5％ |
| ?UV | ?8.6 | ?4.8 | ?8.7 | ?4.4 | ?4.0 | ?6.7 | ?6.2 | ?3.7 | ?7.4 | ?6.06 |
Please refer to Fig. 1, Fig. 1 is in the present invention the preferred embodiment, and one earlier with behind the subregional glass substrate of Excimer UV illumination part, carries out the substrate of etch process again and inspects figure.Wherein substrate is divided into 24 zones, the defective that the stain table metal residual among the figure causes, and A-H, X, Y, Z carry out the preceding zone of crossing via the Excimer UV photo-irradiation treatment of etch process on the substrate.As shown in Figure 1, in the zone that the Excimer UV photo-irradiation treatment is crossed, the defective number of appearance is far below other zones on the substrate, and the S-W zone is more because be detected number of defects too much and can't normal operation behind the etch process.During the etch process of hence one can see that on carrying out glass substrate metal level, utilize the problem that can solve metal residual as the high-energy irradiation of Excimer UV light really.
Except the Excimer UV light that in preferred embodiment of the present invention, uses, in other embodiments of the invention, can use ultraviolet light (ultraviolet), deep UV (ultraviolet light) (deep ultraviolet), plasma (plasma) and atmospheric plasma high energy illumination beams such as (atmospheric pressure plasma) to reduce glass baseplate surface tension force, also can reach and Excimer UV light similar effects, effectively improve the problem of known technology metal residual.
Compare with known glass substrate metal etch technology, the present invention is before the etching substrates metal pattern, carry out the surface tension of metal level on the high-energy irradiation reduction substrate earlier, make when carrying out wet etching process, the chemical agent of etching solution can carry out etching with the layer on surface of metal film equably, effectively improves the metal residual problem that the etching inequality is caused.
The above only is preferred embodiment of the present invention, and all equal variation and modifications of doing according to claim of the present invention all should belong to the covering scope of patent of the present invention.
Claims (19)
1. the method for making of the metal pattern of a display panels, this display panels includes substrate, and the metal level of being located at this substrate surface, and this method for making includes the following step:
Carry out high-energy irradiation at this substrate surface, to reduce the surface tension of this metal level; And
Carry out wet etching process, with this metal level of removing part and form this metal pattern,
Wherein, this metal pattern is intended for lead,
This metal level is by formed composite beds of metal material such as molybdenum/aluminium/molybdenum or molybdenum/aluminium alloys.
2. method for making as claimed in claim 1, wherein this display panels also includes the part surface that mask layer is covered in this metal level, to be used for defining this metal pattern.
3. method for making as claimed in claim 1, wherein this high-energy irradiation is to utilize this substrate surface of Excimer UV rayed.
4. method for making as claimed in claim 1, wherein this high-energy irradiation is to utilize this substrate surface of UV-irradiation.
5. method for making as claimed in claim 1, wherein this high-energy irradiation is to utilize deep UV (ultraviolet light) to shine this substrate surface.
6. method for making as claimed in claim 1, wherein this high-energy irradiation is to utilize this substrate surface of plasma irradiating.
7. method for making as claimed in claim 1, wherein this high-energy irradiation is to utilize atmospheric plasma to shine this substrate surface.
8. method for making as claimed in claim 1, wherein this wet etching process is the wet etching for immersion type.
9. method for making as claimed in claim 1, wherein this metal pattern comprises the taper side wall construction.
10. method for making as claimed in claim 1, wherein this substrate is a glass substrate.
11. a method that reduces etch residues, it includes the following step:
Glass substrate is provided, and this glass baseplate surface includes metal level;
Carry out high-energy irradiation in this substrate surface, to reduce the surface tension of this metal level; And
Carry out wet etching process, with this metal level of removing part and form metal pattern,
Wherein, this metal pattern is intended for lead,
This metal level is by formed composite beds of metal material such as molybdenum/aluminium/molybdenum or molybdenum/aluminium alloys.
12. method as claimed in claim 11, wherein this glass substrate also includes the part surface that mask layer is covered in this metal level, to be used for defining this metal pattern.
13. method as claimed in claim 11, wherein this high-energy irradiation is to utilize this substrate surface of Excimer UV rayed.
14. method as claimed in claim 11, wherein this high-energy irradiation utilizes this substrate surface of UV-irradiation to carry out.
15. method as claimed in claim 11, wherein this high-energy irradiation is to utilize deep UV (ultraviolet light) to shine this substrate surface.
16. method as claimed in claim 11, wherein this high-energy irradiation is to utilize this substrate surface of plasma irradiating.
17. method as claimed in claim 11, wherein this high-energy irradiation is to utilize atmospheric plasma to shine this substrate surface.
18. method as claimed in claim 11, wherein this wet etching process is the wet etching for immersion type.
19. method as claimed in claim 11, wherein this metal pattern comprises the taper side wall construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031015751A CN100365510C (en) | 2003-01-15 | 2003-01-15 | Method of making metal pattern |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031015751A CN100365510C (en) | 2003-01-15 | 2003-01-15 | Method of making metal pattern |
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|---|---|
| CN1517800A CN1517800A (en) | 2004-08-04 |
| CN100365510C true CN100365510C (en) | 2008-01-30 |
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| CNB031015751A Expired - Fee Related CN100365510C (en) | 2003-01-15 | 2003-01-15 | Method of making metal pattern |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100817101B1 (en) * | 2007-04-04 | 2008-03-26 | 한국과학기술원 | Polymer or resist pattern, and mold, metal film pattern, metal pattern using thereof, and methods of forming the sames |
| CN103698970A (en) * | 2013-12-19 | 2014-04-02 | 无锡中微掩模电子有限公司 | Metal residue defect repairing method of mask plate for integrated circuit |
| CN105742404A (en) * | 2014-12-11 | 2016-07-06 | 上海晶玺电子科技有限公司 | Etching method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6179226A (en) * | 1984-09-27 | 1986-04-22 | Hitachi Ltd | Pattern forming method |
| US5025346A (en) * | 1989-02-17 | 1991-06-18 | Regents Of The University Of California | Laterally driven resonant microstructures |
| US5072288A (en) * | 1989-02-21 | 1991-12-10 | Cornell Research Foundation, Inc. | Microdynamic release structure |
| EP0520631A2 (en) * | 1991-06-24 | 1992-12-30 | Wisconsin Alumni Research Foundation | Micromechanical magnetic devices and method of producing the same |
| US5196295A (en) * | 1987-07-31 | 1993-03-23 | Microsi, Inc. | Spin castable mixtures useful for making deep-UV contrast enhancement layers |
| EP0592094A2 (en) * | 1992-09-21 | 1994-04-13 | International Business Machines Corporation | Micro-miniature structure fabrication |
| JPH08278625A (en) * | 1995-04-06 | 1996-10-22 | Toppan Printing Co Ltd | Production of photomask |
| CN1220742A (en) * | 1996-05-20 | 1999-06-23 | 纳幕尔杜邦公司 | Attenuating embedded phase shift photomask blanks |
| WO2001067180A1 (en) * | 2000-03-09 | 2001-09-13 | Clariant International Ltd. | Method for forming resist pattern in reverse-tapered shape |
| CN1373863A (en) * | 1999-08-19 | 2002-10-09 | 东进瑟弥侃株式会社 | Photoresist remover composition |
-
2003
- 2003-01-15 CN CNB031015751A patent/CN100365510C/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6179226A (en) * | 1984-09-27 | 1986-04-22 | Hitachi Ltd | Pattern forming method |
| US5196295A (en) * | 1987-07-31 | 1993-03-23 | Microsi, Inc. | Spin castable mixtures useful for making deep-UV contrast enhancement layers |
| US5025346A (en) * | 1989-02-17 | 1991-06-18 | Regents Of The University Of California | Laterally driven resonant microstructures |
| US5072288A (en) * | 1989-02-21 | 1991-12-10 | Cornell Research Foundation, Inc. | Microdynamic release structure |
| EP0520631A2 (en) * | 1991-06-24 | 1992-12-30 | Wisconsin Alumni Research Foundation | Micromechanical magnetic devices and method of producing the same |
| EP0592094A2 (en) * | 1992-09-21 | 1994-04-13 | International Business Machines Corporation | Micro-miniature structure fabrication |
| JPH08278625A (en) * | 1995-04-06 | 1996-10-22 | Toppan Printing Co Ltd | Production of photomask |
| CN1220742A (en) * | 1996-05-20 | 1999-06-23 | 纳幕尔杜邦公司 | Attenuating embedded phase shift photomask blanks |
| CN1373863A (en) * | 1999-08-19 | 2002-10-09 | 东进瑟弥侃株式会社 | Photoresist remover composition |
| WO2001067180A1 (en) * | 2000-03-09 | 2001-09-13 | Clariant International Ltd. | Method for forming resist pattern in reverse-tapered shape |
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