CN100362638C - Method for removing lattice defect in pad area of semiconductor device - Google Patents
Method for removing lattice defect in pad area of semiconductor device Download PDFInfo
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- CN100362638C CN100362638C CNB2004100530748A CN200410053074A CN100362638C CN 100362638 C CN100362638 C CN 100362638C CN B2004100530748 A CNB2004100530748 A CN B2004100530748A CN 200410053074 A CN200410053074 A CN 200410053074A CN 100362638 C CN100362638 C CN 100362638C
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- lattice defect
- pad area
- conductive layer
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Abstract
The present invention discloses a method for removing lattice defects in a pad area of a semiconductor device by the sputtering and repairing treatment of Ar plasma. After a polyimide protective layer is formed on a pad, the detection whether the lattice defects exist in the pad area or not is carried out. If the lattice defects exist in the pad area, the lattice defects in the pad area are removed by the sputtering and repairing treatment of the Ar plasma.
Description
Technical field
The present invention relates to remove the method for the lattice defect in pad (PAD) district of semiconductor device, be particularly related to the method for removing the lattice defect in pad (PAD) district of semiconductor device with the repair process of argon gas (Ar) plasma sputtering, the method for the lattice defect during particularly the pad (PAD) of removing dynamic random access memory (hereinafter to be referred as DRAM) with the repair process of argon gas (Ar) plasma sputtering is distinguished.
Background technology
Semiconductor device comprises various types of active devices, for example, dynamic random access memory (DRAM) is a kind of semiconductor device with sandwich construction, for the member that will form in each rete links together to constitute a complete DRAM, with make DRAM be connected and constitute the electronic circuit module of needs with other semiconductor device or other electronic components, finish these and connect just necessary many pads that constitutes, pad is extremely important connecting elements, therefore, require pad to have good electrical conductivity and high reliability, the lattice defect in the pad area can cause negative effect to pad conductivity and high reliability.
The pad of general semiconductor device forms technology and may further comprise the steps; Step 1 forms conductive layer on the substrate of other members that are formed with semiconductor device, for example, and the aluminum or aluminum alloy layer; Step 2 applies photoresist (PR) on the aluminum or aluminum alloy conductive layer; Step 3 is carried out photoetching and corrosion with the mask with land pattern to conductive layer, to constituting the conductive layer composition of pad; Step 4 is carried out ashing (Ashing) and is handled, and removes the photoresist on the conductive layer; Step 5 is carried out organic solvent and is cleaned, and removes photoresist; Step 6 forms the aluminium alloy passivation layer on established conductive layer with land pattern; Step 7 forms the polyimides protective layer on the conductive welding disk that is formed with the aluminium alloy passivation layer, form pad thus.
Form in the technology at existing pad, because in the step 3 to conductive layer photoetching corrosion composition, used corrosive agent is fluorine-containing corrosive agent, the fluorine ion (F that overflows in the corrosive agent
+) in processing step subsequently, can cause pad area lattice defect to occur, the lattice defect in the pad area can cause negative effect to the conductivity and the high reliability of pad.In order to prevent in pad area, to produce lattice defect, the blanking time (Q time) between strict controlled step 6 in the existing processes (forming the aluminium alloy passivation layer on the established conductive layer with land pattern) and the step 7 (at formation polyimides protective layer on the conductive welding disk that is formed with the aluminium alloy passivation layer).But; this qualification aluminium alloy passivation layer forms step, and (step 6) and polyimides protective layer form step, and (method of the blanking time between the step 7) (Q time) is not reliable especially; in case surpassed the Q time, will in pad area, produce lattice defect.And, even after the polyimides protective layer forms, also can find to have in the pad area lattice defect.These defectives can cause negative effect to the reliability of DRAM.
Summary of the invention
In order to overcome above-mentioned defective the inventive method is proposed.The objective of the invention is; a kind of method of removing the lattice defect in the pad area is proposed; form step (after the step 7) at the polyimides protective layer; detect in the pad and whether have lattice defect; if in pad area, there is lattice defect; then adopt the repair process of argon gas (Ar) plasma sputtering, to eliminate the lattice defect in the pad area.
According to a technical scheme of the present invention; on pad area, form after the polyimides protective layer, detect in the pad area whether have lattice defect, if there is lattice defect in the pad area; then carry out the repair process of argon gas (Ar) plasma sputtering, to remove the lattice defect in the pad area.
Description of drawings
Accompanying drawing is a part of specification, with the word segment of specification principle of the present invention and feature is described, demonstrates the embodiment that represents the principle of the invention and feature in the accompanying drawing.Wherein,
Fig. 1 is that the pad of conventional semiconductor device forms process chart;
Fig. 2 is the pad formation process chart by semiconductor device of the present invention;
Fig. 3 is the microphotograph that lattice defect is arranged in the pad area of taking with light microscope (OM);
Fig. 4 is the microphotograph that lattice defect is arranged in the pad area of taking with tiltable electronic scanner microscope (Jo-SEM); With
Fig. 5 is the spectrogram that carries out component analysis with the X-ray spectral analysis method of loosing.
Embodiment
Fig. 2 is the pad formation process chart by semiconductor device of the present invention.Fig. 2 is shown, and to form technological process by the pad of semiconductor device of the present invention be to have increased step S1 (detect in the pad area and whether have lattice defect) afterwards in the step 7 (forming the polyimides protective layer) that the pad of the shown conventional semiconductor device of Fig. 1 forms technological process; (, carry out step S2 (repair process of argon gas (Ar) plasma sputtering) with step S2 when step S1 detects when having lattice defect in the pad area.If, detect when not having lattice defect in the pad area at step S1, finish the manufacturing of pad.
Specific embodiment
Below describe the method for the lattice defect in distinguishing according to the pad (PAD) of removing semiconductor device with the repair process of argon gas (Ar) plasma sputtering of the present invention in detail referring to Fig. 2.Fig. 2 is the pad formation process chart by semiconductor device of the present invention.
It is to have increased afterwards in the step 7 (forming the polyimides protective layer) that the pad of the shown conventional semiconductor device of Fig. 1 forms technological process that the pad according to semiconductor device of the present invention that shows at Fig. 2 forms technological process: step S1, detect in the pad area whether have lattice defect; With step S2,, carry out the repair process of argon gas (Ar) plasma sputtering when step S1 detects when having lattice defect in the pad area.Step S1 wherein, detect in the pad area with light microscope (OM) whether lattice defect is arranged, when in finding pad area, lattice defect being arranged, shooting has the microphotograph of the pad of lattice defect, and takes the microphotograph of the pad area that lattice defect is arranged with tiltable electronic scanner microscope (Jo-SEM).Then, carry out step S2, carry out argon gas (Ar) plasma sputtering repair process stream.
Treatment conditions in the repair process of argon gas (Ar) plasma sputtering are:
Vacuum-Du in argon gas (Ar) the plasma sputtering repair process chamber is: 50-200mTorr,
The electrical power of using in the repair process of argon gas (Ar) plasma sputtering is: 300-500W,
Argon gas (Ar) is flowed into,
The loss amount of pad aluminum or aluminum alloy conductive layer should be less than 1000 after the repair process of argon gas (Ar) plasma sputtering.
By usefulness argon gas (Ar) plasma sputtering described above repair process, eliminated the lattice defect that exists in the pad area, the pad that can guarantee semiconductor device has good electrical conductivity and high reliability, can constitute the semiconductor device with high reliability thus.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in the foregoing description and the specification just illustrates principle of the present invention; the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, and these changes and improvements all fall in the claimed scope of the present invention.The scope of protection of present invention is defined by appending claims and equivalent thereof.
Claims (3)
1. remove the method for the lattice defect in the pad area of semiconductor device, may further comprise the steps:
Step 1 forms the aluminum or aluminum alloy conductive layer on the substrate of other members that are formed with semiconductor device;
Step 2 applies photoresist on the aluminum or aluminum alloy conductive layer;
Step 3 is carried out photoetching and corrosion with the mask with land pattern to conductive layer, to constituting the conductive layer composition of pad;
Step 4 is carried out ashing treatment, removes the photoresist on the conductive layer;
Step 5 is carried out organic solvent and is cleaned, and removes photoresist;
Step 6 forms the aluminium alloy passivation layer on established conductive layer with land pattern;
Step 7 forms the polyimides protective layer on the conductive welding disk that is formed with the aluminium alloy passivation layer; Make the pad of semiconductor device,
It is characterized in that, after step 7, also comprise:
Step S1 detects whether there is lattice defect in the pad area;
Step S2 detects in step S1 when in the pad area lattice defect being arranged, and established pad structure is carried out argon plasma sputter repair process, to eliminate the lattice defect in the pad area.
2. according to the method for claim 1, it is characterized in that step S1 detects in the pad area whether have lattice defect; Be with the lattice defect in light microscope and the tiltable electronic scanner microscope detection pad area, and carry out component analysis with the X-ray spectral analysis method of loosing.
3. according to the method for claim 1, it is characterized in that the condition in the argon plasma sputter repair process of step S2 is:
Vacuum degree in the argon plasma sputter repair process chamber is: 50-200mTorr,
The electrical power of using in the argon plasma sputter repair process is: 300-500W,
Argon gas is flowed into,
The loss amount of pad aluminum or aluminum alloy conductive layer should be done 1000 for a short time after the argon plasma sputter repair process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100530748A CN100362638C (en) | 2004-07-22 | 2004-07-22 | Method for removing lattice defect in pad area of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100530748A CN100362638C (en) | 2004-07-22 | 2004-07-22 | Method for removing lattice defect in pad area of semiconductor device |
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| CN1725457A CN1725457A (en) | 2006-01-25 |
| CN100362638C true CN100362638C (en) | 2008-01-16 |
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| CNB2004100530748A Expired - Fee Related CN100362638C (en) | 2004-07-22 | 2004-07-22 | Method for removing lattice defect in pad area of semiconductor device |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295656B (en) * | 2007-04-24 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN101593711B (en) * | 2008-05-30 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing formation of crystal lattice defect of chip welding disk area and corresponding welding disk forming method |
| CN103545163B (en) * | 2012-07-10 | 2016-11-16 | 中芯国际集成电路制造(上海)有限公司 | There is the processing method of the semiconductor structure of fluorine residue or chlorine residual |
| CN104952749A (en) * | 2014-03-26 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | Welding pad defect detecting method |
| CN108878350B (en) * | 2017-05-09 | 2020-11-03 | 中芯国际集成电路制造(上海)有限公司 | Metal layer structure and manufacturing method thereof, semiconductor structure and manufacturing method thereof |
| CN111276399B (en) * | 2020-02-19 | 2024-02-27 | 武汉新芯集成电路制造有限公司 | Reworking method of bonding pad crystallization defect and semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1268245A (en) * | 1997-05-23 | 2000-09-27 | 阿尔平微型系统公司 | A system and method for packaging integrated circuits |
| US20030196681A1 (en) * | 2002-04-23 | 2003-10-23 | Ching-Ping Wu | Eliminating residual polymer in the cleaning process of post pad etching |
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2004
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1268245A (en) * | 1997-05-23 | 2000-09-27 | 阿尔平微型系统公司 | A system and method for packaging integrated circuits |
| US20030196681A1 (en) * | 2002-04-23 | 2003-10-23 | Ching-Ping Wu | Eliminating residual polymer in the cleaning process of post pad etching |
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