CN100362377C - Sol-gel material derived adjustable light attenuator and its producing method - Google Patents
Sol-gel material derived adjustable light attenuator and its producing method Download PDFInfo
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- CN100362377C CN100362377C CNB2004100787403A CN200410078740A CN100362377C CN 100362377 C CN100362377 C CN 100362377C CN B2004100787403 A CNB2004100787403 A CN B2004100787403A CN 200410078740 A CN200410078740 A CN 200410078740A CN 100362377 C CN100362377 C CN 100362377C
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
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- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 claims description 12
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- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims 3
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Abstract
The present invention relates to a variable optical attenuator and a producing method thereof. The producing method comprises the following steps: firstly, forming a bottom coating on a substrate; secondly, utilizing photoetching technique to form a waveguide structure with a waveguide core region and a waveguide attenuation region on the bottom coating; successively, forming an upper coating on the bottom coating and the waveguide structure; then, arranging an electrode on the upper coating, and making the position of the electrode correspond to the upper side of the waveguide attenuation region. In addition, the waveguide structure is composed of a sol-gel material, wherein the sol-gel material is obtained by mixing and heating a metal alkane oxide solution and an organic modified siloxane solution.
Description
Technical field
The relevant a kind of adjustable light attenuator of the present invention, and particularly relevant a kind of adjustable light attenuator and manufacture method thereof of deriving by sol-gel material.
Background technology
Flourish along with the optical communication network, relevant light communication element exploitation also relative raising with its performance requirement, wherein adjustable light attenuator (variable optical attenuator; VOA) playing the part of epochmaking role aspect long distance communication and the metropolitan area communication.For example, at wave division multiplexing (WDM) conversion (wave divisionmultiplexing; WDM) in the system, adjustable light attenuator can be used to dwindle the energy difference and the signal to noise ratio (S/N ratio) (signal/noise ratio) of keeping passage between passage (channel), therefore can combine with image intensifer adjusting its gain, or change (dense wave division multiplexing at the high density wave division multiplexing (WDM); DWDM) in the grid, dynamically adjust the power division of intersection connected network.
The mechanical type adjustable light attenuator is a damping capacity of utilizing mechanical system control light, yet the component size of common mechanical formula adjustable light attenuator is bigger, and unfavorable miniaturization and the modular integrated element of being applied to.Though the micro electromechanical adjustable light attenuator provides miniaturization adjustable light attenuator array, it must finish manufacturing under accurate, complicated control, therefore is not suitable for a large amount of productions.Electric light formula or thermo-optic type adjustable light attenuator then are to change the refractive index of certain material by control electric field or temperature, and then reach the purpose of control light decrement.For electric light formula or thermo-optic type adjustable light attenuator, it is one of most important problem that suitable optical application material is provided.
Because demand that all can network increases fast, how to reduce cost and strengthen management function, become the main developing direction of adjustable light attenuator.Another trend then is to transplant integrated circuit (integrated circuit; IC) notion is to making integrated optical circuit (optical integrated circuit; OIC) on the element.Therefore at present relevant dealer there's no one who doesn't or isn't is devoted to develop new material or operation or miniaturization or integrates optical element, to reduce manufacturing cost and to improve component properties and application.
Summary of the invention
Therefore the object of the present invention is to provide a kind of adjustable light attenuator and manufacture method thereof, make adjustable light attenuator easily become an optical module with other optical elements integration, reducing manufacturing cost and to dwindle component size, but and then volume production, make adjustable light attenuator.
In view of above-mentioned purpose, the present invention proposes a kind of adjustable light attenuator that utilizes sol-gel material to make, and manufacture method.
A kind of sol-gel material derived adjustable light attenuator is provided according to an aspect of the present invention, comprises at least: a substrate; One waveguiding structure is formed on this substrate, and wherein this waveguiding structure has a waveguide core zone and a waveguide attenuation zone, and this waveguide attenuation zone is made of a sol-gel material; And drape over one's shoulders coating on one, be formed on this substrate and this waveguiding structure.
A kind of manufacture method of sol-gel material derived adjustable light attenuator is provided according to a further aspect of the invention, comprises at least: form a waveguide core zone on a substrate; Be coated with a sol-gel material on this substrate and this waveguide core zone; Provide a mask layer on this sol-gel material, and this mask layer have an opening; Carry out exposure process; Remove this sol-gel material that is covered by this mask layer, and stay this sol-gel material under this opening of this mask layer, with as a waveguide attenuation zone; Toast this substrate; And form and drape over one's shoulders coating on one on this substrate, this waveguide core zone and this waveguide attenuation zone.
According to a preferred embodiment of the present invention, sol-gel material is by metal alkoxide and organic upgrading siloxane reactions and get, and this material can be greater than 90% in the penetrance of optical communication wavelength, and has the high index of refraction temperature coefficient.In addition, sol-gel material can be made component structure by photoetching technique, so produce in a large number easilier.This material combined with photoetching technique make adjustable light attenuator, can effectively reduce manufacturing cost.On the other hand, adjustable light attenuator can an embedded waveguiding structure or a ridged waveguide structure come so more to can be applicable in the integrated optical circuit as its basic structure, and help integrating and miniaturized components.
Description of drawings
For above-mentioned and other purposes of the present invention, characteristics and advantage can be become apparent, below conjunction with figs. is elaborated.
Figure 1A is a kind of process flow diagram for preparing sol-gel material according to a preferred embodiment of the present invention;
Figure 1B is the preparation process flow diagram of sol-gel material before character is measured according to Figure 1A preparation;
Fig. 2 A to 2F is the making flow process schematic cross-section according to a kind of adjustable light attenuator of another preferred embodiment of the present invention;
Fig. 3 is the schematic cross-section according to a kind of adjustable light attenuator of the another preferred embodiment of the present invention;
Fig. 4 A is a kind of vertical view of channel-type adjustable light attenuator; And
Fig. 4 B is a kind of vertical view of deviation formula adjustable light attenuator.
Embodiment
The present invention utilizes the characteristic of sol-gel material, as have bigger thermo-optic effect, the semiconductor technology can using and be beneficial to character such as volume production, make an adjustable light attenuator, to reach the purpose that reduces manufacturing cost and integrated assembly.The preferred embodiment of the preparation of its sol-gel material, the application of adjustable light attenuator, details are as follows with reference to the accompanying drawings.
The 1st embodiment
Present embodiment reaches the measurement of sol-gel material character for describing the preparation flow of sol-gel material.
Figure 1A is a kind of process flow diagram for preparing sol-gel material.In this preferred embodiment, with tetrabutyl zirconate (zirconium butoxide; Zr (OBu) 4) is the precursor of metal alkoxide (metal alkoxide), and with an organic upgrading siloxane (organically modified Si-alkoxide) reaction, as methacrylic acid propyl trimethoxy siloxane (methacryloxypropyl tri-methoxysilane; MPTMS), get an organic and inorganic sol-gel material.With reference to Figure 1A, at first in step 100, MPTMS is added to stir about 30 to 60 minutes in one first solvent and forms one first solution with 1: 2 part by weight, wherein can add appropriate amount of catalysts according to step 120, as the hydrochloric acid of 0.1N, to quicken the hydrolysis reaction of MPTMS.
Then carry out step 140, add approximately in Zr (OBu) 4 to second solvents with weight ratios such as second solvent, and stirred and made Zr (OBu) 4 hydrolysis in 10-30 minute and form one second solution.Wherein, Zr (OBu) 4 is 1: 1 to 1: 10 with the mol ratio of MPTMS, and preferable ratio then is 1: 2 to 1: 5.Secondly according to step 160, the first above-mentioned solution is mixed stirring with second solution, and add thermal response a period of time.In this preferred embodiment, first solvent and second solvent are all tetrahydrofuran (tetra-hydrofuran; And temperature of reaction is about 65 ℃ THF).Then according to step 180, with above-mentioned reaction solution displacement to one the 3rd solvent and form one the 3rd solution.Compared to first solvent and second solvent, the consumption of the 3rd solvent is less, boiling point is higher, therefore can improve the solid content of sol-gel material.In this embodiment, the 3rd solvent is with acetate butyl glycol ether ester (propylene glycol monoether acetate; PMAc) be preferable selection.
Figure 1B is the preparation flow process of sol-gel material before character is measured according to Figure 1A preparation.With reference to Figure 1B, in step 110, add earlier in the 3rd solution of light inlet initiator to the above-mentioned displacement, and the addition of light initiator is about 2.5% to 10%.Then, after according to step 130 this solution being filtered, the mode with rotary coating (spin coating) is applied on the glass substrate again.It with about 150 ℃ of preliminary dryings (pre-baking) glass substrate, carries out the exposure process of step 170 inferior in the step 150 then.
At last, the sol-gel material that exposure is finished carries out the material character measurement.With the absorption of the sol-gel material of ultraviolet light/visible light/this preferred embodiment of near infrared light spectrometer measurement/penetrate spectrum to find, it can be greater than more than 90% in the visible-range (400-700nm) and the penetrance of the use wavelength (1310nm and 1550nm) of general optical communication, and the refractive index of measuring sol-gel material (Zr (OBu) 4 is about 1: 2 with the mol ratio of MPTMS) with prism coupler (prism coupler) then is 1.5217 ± 0.0001 at wavelength 1310nm.In addition, utilize Mach-Zehnder interferometer (Mach-Zehner interferometer) to measure thermal refractive index coefficient (the refractiveindex-to-temperature coefficient of material (Zr (OBu) 4 is about 1: 2 with the mol ratio of MPTMS); Dn/dT) find that between absolute temperature 303K to 353K, material is respectively-9.38 * 10 in the thermal refractive index coefficient of wavelength 633nm and 1300nm
-51/K be-1.56 * 10
-41/K shows that this sol-gel material has the thermo-optic effect of height, can effectively change refractive index by the control temperature variation.Moreover by the result of thermal analysis experiment as can be known, above-mentioned sol-gel material has low thermal expansivity (coefficient of thermal expansion; CTE), be 6.47ppm/ ℃ wherein, and in the time of 60-140 ℃, its value is 2.64ppm/ ℃ in 40-100 ℃ thermal expansivity.
The 2nd embodiment
Present embodiment is to utilize the sol-gel material among the 1st embodiment to make an adjustable light attenuator.In order to make full use of the character of sol-gel material, and be beneficial to a large amount of productions, manufacturing in conjunction with photoetching technique, an aspect of the present invention is to propose the next basic structure as adjustable light attenuator of a kind of embedded (buried) waveguiding structure, and it makes flow process shown in Fig. 2 A to 2F.Moreover this embedded waveguiding structure more can be used in the highdensity optical planar circuit, becomes optical module to integrate adjustable light attenuator and various element.
With reference to Fig. 2 A, coating (bottom cladding) 210 is draped over one's shoulders on a silicon substrate 200 in one end of formation earlier, is leaked outside by silicon substrate 200 with isolated light field; Etching one irrigation canals and ditches structure 220 is with as embedded waveguiding structure main body then.Wherein, this waveguiding structure main body is revolved cross section such as Fig. 2 F after turning 90 degrees.Shown in Fig. 2 F, can know during by light direct of travel 295 another cross sections of inspection oscillography guide structure main body and see, also can be divided into 255 and one waveguide core zone (core) 235, waveguide attenuation zone in this waveguiding structure main body.Recall Fig. 2 B and 2C, as shown in the figure a photosensitive material 230 is coated that the end drapes over one's shoulders on the coating 210 and irrigation canals and ditches structure 220 in, and form one have the mask layer 242 of an opening after, expose, remove mask layer 242 in regular turn, develop removing before steps such as the photosensitive material 230 that covered by mask layer 242 and baking, and limit the position in waveguide core zone 235.
Then carry out the making in waveguide attenuation zone 255.Shown in Fig. 2 D, the sol-gel material among the 1st embodiment 250 mixed an amount of light initiator (2.5%-10%) after, coat earlier on the silicon substrate 200 of finishing waveguide core zone 235, and 200 a period of times of preliminary drying silicon substrate.Form one then and have the mask layer 246 of another opening, and expose, remove mask layer 246 once more, develop and remove sol-gel material 250 under the mask layer 246, with step such as baking, limit the position in waveguide attenuation zone 255.Can know by the waveguiding structure main body other direction cross section shown in Fig. 2 F and to see that waveguide attenuation zone 255 is to be positioned among the waveguide core zone 235.In addition, above-mentioned development, remove step for adopting the Wet-type etching operation.
Secondly with reference to Fig. 2 E, form on one and drape over one's shoulders coating (top cladding) 260 on the silicon substrate 200 of finishing waveguide attenuation zone 255 (not being shown in Fig. 2 E) and waveguide core zone 235.Wherein, drape over one's shoulders on coating 260 and the end drape over one's shoulders the refractive index of coating 210 must be lower with the refractive index in waveguide core zone 235 than waveguide attenuation zone 255.
With reference to Fig. 2 F, it is for showing the schematic cross-section of embedded waveguiding structure main body other direction with 295 inspections of light direct of travel.Shown in Fig. 2 F, form an electrode 270 at last and drape over one's shoulders on the coating 260, and the position of electrode 270 is corresponding to waveguide attenuation region 255 tops in the waveguiding structure in last, so can finish the making of adjustable light attenuator.Waveguide core zone 235 also can be used to connect other optical element except that the light conducting path is provided, for example optical fiber etc.After light enters waveguide core zone 235 by direct of travel 295, by heating electrode 270, can change the refractive index of the sol-gel material 250 that constitutes waveguide attenuation zone 255, and then the advance decay of light of may command.
On the other hand, though above-mentioned serve as to implement aspect to illustrate how to utilize sol-gel material and photoetching technique to make adjustable light attenuator with embedded waveguiding structure.Yet, under the situation that does not break away from spirit of the present invention and scope, also can use identical notion, material and technology etc., be the adjustable light attenuator of foundation structure and produce one with ridged (ridge) waveguiding structure.
Fig. 3 is the schematic cross-section that utilizes prepared another aspect adjustable light attenuator of above-mentioned sol-gel material.With reference to Fig. 3, drape over one's shoulders coating 310 and be formed at earlier on the silicon substrate 300 at an end.Then, utilize photosensitive material and sol-gel material respectively, and limit, form a ridged waveguide structure 340 by photoetching technique and drape over one's shoulders on the coating 310 end of in, wherein this waveguiding structure 340 also can be divided into a waveguide core zone (photosensitive material) with the transmission light of advancing, and a waveguide attenuation zone (sol-gel material) is to carry out the optical attenuation effect.Next forms drapes over one's shoulders coating 360 and drapes over one's shoulders on the coating 310 in the waveguiding structure 340 and the end on one, and on drape over one's shoulders coating 360 and drape over one's shoulders the refractive index of the refractive index of coating 310 less than waveguiding structure 340 end of with.One electrode 370 is set then drapes over one's shoulders on the coating 360 in last, and corresponding on the waveguide attenuation region in the waveguiding structure 340.So when heating electrode 370, can change the refractive index of sol-gel material, and then utilize the waveguide attenuation zone to control the decay of the light of advancing.In addition, if the refractive index of substrate is lower than waveguiding structure, then coating is draped over one's shoulders at this substrate end of also can be used as adjustable light attenuator, and directly is made in waveguiding structure on the substrate, again will on drape over one's shoulders coating and be formed on substrate and the waveguiding structure, this also can reach the effect of leaded light.
Moreover above-mentioned embedded waveguiding structure or ridged waveguide structure also can be the structure of a passage pattern (channel) or a deviation pattern (prism-assisted).Fig. 4 A and 4B are respectively the vertical view of the adjustable light attenuator with channel-type attenuation region and deviation formula attenuation region.Shown in Fig. 4 A, the waveguiding structure that drape over one's shoulders on the coating 410 at the end is made of a nucleus 435 and a channel-type attenuation region 452.When light marches to channel-type attenuation region 452 via nucleus 435, owing to can change the refractive index of channel-type attenuation region 452 by heating electrode, and make part light can't continue to be passed to another nucleus 435 again, the energy of the output light of therefore can decaying.With reference to Fig. 4 B, its waveguiding structure then comprises a nucleus 435 and a deviation formula attenuation region 458.After heated by electrodes deviation formula attenuation region 458, can change the refractive index of sol-gel material, and cause the deviation of light direct of travel, therefore the energy of output light reduces, and reaches the purpose of optical attenuation.
By the invention described above preferred embodiment as can be known, utilize sol-gel material to make adjustable light attenuator, can significantly reduce cost of manufacture.And, therefore can carry out the volume production of element because of sol-gel material can be made component structure by photoetching technique.In addition, cooperate the manufacture method of sol-gel material and adjustable light attenuator of the present invention, can integrate multiple optical element, and then Miniaturizable or making optical module.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; any ripe be present technique personnel without departing from the spirit and scope of the present invention; when the change that can do various equivalences or replacement, so protection scope of the present invention is when looking accompanying being as the criterion that the application's claim scope defined.
Claims (25)
1. sol-gel material derived adjustable light attenuator comprises at least:
One substrate;
One waveguiding structure is formed on this substrate, and wherein this waveguiding structure has a waveguide core zone and a waveguide attenuation zone, and this waveguide attenuation zone is made of a sol-gel material;
Drape over one's shoulders coating on one, be formed on this substrate and this waveguiding structure, and should on drape over one's shoulders coating refractive index be lower than this waveguide attenuation zone and this waveguide core zone; And
One electrode is arranged on this and drapes over one's shoulders on the coating, and corresponding to the top position in this waveguide attenuation zone of this waveguiding structure.
2. sol-gel material derived adjustable light attenuator as claimed in claim 1 is characterized in that also comprising:
Coating was draped over one's shoulders at one end, was formed between this substrate and this waveguiding structure.
3. sol-gel material derived adjustable light attenuator as claimed in claim 2 it is characterized in that the described end drapes over one's shoulders coating and also comprise an irrigation canals and ditches structure, and this waveguiding structure is to be arranged in this irrigation canals and ditches structure.
4. sol-gel material derived adjustable light attenuator as claimed in claim 1 is characterized in that described sol-gel material is by a metal alkoxide and an organic upgrading siloxane reactions and get.
5. sol-gel material derived adjustable light attenuator as claimed in claim 4 is characterized in that described metal alkoxide comprises a tetrabutyl zirconate, and this organic upgrading siloxane comprises monomethyl acrylic acid propyl trimethoxy siloxane.
6. sol-gel material derived adjustable light attenuator as claimed in claim 5, the mol ratio that it is characterized in that described tetrabutyl zirconate and this methacrylic acid propyl trimethoxy siloxane is to be 1: 1 to 1: 10.
7. sol-gel material derived adjustable light attenuator as claimed in claim 5, the mol ratio that it is characterized in that described tetrabutyl zirconate and this methacrylic acid propyl trimethoxy siloxane is to be 1: 2 to 1: 5.
8. sol-gel material derived adjustable light attenuator as claimed in claim 1 is characterized in that described waveguide core zone is made of a photosensitive material.
9. sol-gel material derived adjustable light attenuator as claimed in claim 1 is characterized in that described waveguide attenuation zone is for a channel-type attenuation region or is a deviation formula attenuation region.
10. the manufacture method of a sol-gel material derived adjustable light attenuator comprises at least:
Form a waveguide core zone on a substrate;
Be coated with a sol-gel material on this substrate and this waveguide core zone;
Provide a mask layer in this sol-gel material top, and this mask layer have an opening;
Carry out exposure process;
Remove this sol-gel material that is covered by this mask layer, and stay this sol-gel material under this opening of this mask layer, with as a waveguide attenuation zone;
Toast this substrate;
Form and drape over one's shoulders coating on one on this substrate, this waveguide core zone and this waveguide attenuation zone;
One electrode is set in draping over one's shoulders on the coating on this, and corresponding to the top position in this waveguide attenuation zone of this waveguiding structure.
11. the manufacture method of sol-gel material derived adjustable light attenuator as claimed in claim 10 is characterized in that this waveguide core zone method on this substrate of described formation comprises at least:
Be coated with a photosensitive material on this substrate;
Provide another mask layer on this photosensitive material, and this another mask layer have another opening;
Carry out exposure process;
Remove this photosensitive material that is covered by this another mask layer, and stay this photosensitive material under this another opening; And
Toast this photosensitive material.
12. the manufacture method of sol-gel material derived adjustable light attenuator as claimed in claim 10, it is characterized in that forming before also being contained in the step that forms this waveguide core zone an end drape over one's shoulders coating on this substrate and an irrigation canals and ditches structure drape over one's shoulders on the coating in this end.
13. the manufacture method of sol-gel material derived adjustable light attenuator as claimed in claim 10, it is characterized in that the step that also is contained in this sol-gel material of coating forms the step of this sol-gel material before, and add the step of a smooth initiator in this sol-gel material.
14. the manufacture method of sol-gel material derived adjustable light attenuator as claimed in claim 13 is characterized in that the method for described this sol-gel material of formation comprises at least:
Add a tetrabutyl zirconate in one first solvent to form one first solution, wherein the weight ratio of this tetrabutyl zirconate and this first solvent is 1: 1;
To form one second solution, wherein the weight ratio of this methacrylic acid propyl trimethoxy siloxane and this second solvent is 1: 2 in one second solvent for an adding monomethyl acrylic acid propyl trimethoxy siloxane and a catalyzer;
Mix this first solution and this second solution to form a mixed solution;
Heat this mixed solution; And
Replace this mixed solution to one the 3rd solvent, wherein the boiling point of the 3rd solvent is higher than the boiling point of this first solvent and this second solvent.
15. the manufacture method of sol-gel material derived adjustable light attenuator as claimed in claim 14, the mol ratio that it is characterized in that described tetrabutyl zirconate and this methacrylic acid propyl trimethoxy siloxane is to be 1: 1 to 1: 10.
16. the manufacture method of sol-gel material derived adjustable light attenuator as claimed in claim 14, the mol ratio that it is characterized in that described tetrabutyl zirconate and this methacrylic acid propyl trimethoxy siloxane is to be 1: 2 to 1: 5.
17. the manufacture method of sol-gel material derived adjustable light attenuator as claimed in claim 10 is characterized in that also being contained in the step of this substrate of preliminary drying before the step that this mask layer is provided.
18. the manufacture method of sol-gel material derived adjustable light attenuator as claimed in claim 9 is characterized in that the described step that removes this sol-gel material that is covered by this mask layer is to adopt wet etch process.
19. a deviation formula adjustable light attenuator comprises at least:
One substrate;
Coating was draped over one's shoulders at one end, was formed on this substrate;
One waveguiding structure is formed at this end to drape over one's shoulders on the coating, and wherein this waveguiding structure has a nucleus and a deviation formula attenuation region;
Drape over one's shoulders coating on one, be formed at this end to drape over one's shoulders on coating and this waveguiding structure, and should on drape over one's shoulders coating refractive index be lower than this waveguide attenuation zone and this waveguide core zone; And
One electrode is arranged on this and drapes over one's shoulders on the coating, and corresponding to the top position of this deviation formula attenuation region of this waveguiding structure.
20. deviation formula adjustable light attenuator as claimed in claim 19, it is characterized in that described deviation formula attenuation region is made of a sol-gel material, and this sol-gel material is by a metal alkoxide and an organic upgrading siloxane reactions and get.
21. deviation formula adjustable light attenuator as claimed in claim 20 is characterized in that described metal alkoxide comprises a tetrabutyl zirconate, and this organic upgrading siloxane comprises monomethyl acrylic acid propyl trimethoxy siloxane.
22. deviation formula adjustable light attenuator as claimed in claim 21, the mol ratio that it is characterized in that described tetrabutyl zirconate and this methacrylic acid propyl trimethoxy siloxane is to be 1: 1 to 1: 10.
23. deviation formula adjustable light attenuator as claimed in claim 21, the mol ratio that it is characterized in that described tetrabutyl zirconate and this methacrylic acid propyl trimethoxy siloxane is to be 1: 2 to 1: 5.
24. deviation formula adjustable light attenuator as claimed in claim 19 is characterized in that described nucleus is made of a photosensitive material.
25. deviation formula adjustable light attenuator as claimed in claim 19 it is characterized in that the described end drapes over one's shoulders coating and also comprise an irrigation canals and ditches structure, and this waveguiding structure is to be arranged in this irrigation canals and ditches structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100787403A CN100362377C (en) | 2004-09-15 | 2004-09-15 | Sol-gel material derived adjustable light attenuator and its producing method |
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|---|---|---|---|
| CNB2004100787403A CN100362377C (en) | 2004-09-15 | 2004-09-15 | Sol-gel material derived adjustable light attenuator and its producing method |
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| Publication Number | Publication Date |
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| CN1749787A CN1749787A (en) | 2006-03-22 |
| CN100362377C true CN100362377C (en) | 2008-01-16 |
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| CNB2004100787403A Expired - Fee Related CN100362377C (en) | 2004-09-15 | 2004-09-15 | Sol-gel material derived adjustable light attenuator and its producing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003232941A (en) * | 2002-02-07 | 2003-08-22 | Matsushita Electric Ind Co Ltd | Optical waveguide and method of manufacturing the same |
| US20040096181A1 (en) * | 2002-11-19 | 2004-05-20 | Bintz Louis J. | Electro-optic polymer waveguide devices incorporating organically modified sol-gel clads |
| US20040131303A1 (en) * | 2002-11-21 | 2004-07-08 | Nippa David W. | Embedded electrode integrated optical devices and methods of fabrication |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003232941A (en) * | 2002-02-07 | 2003-08-22 | Matsushita Electric Ind Co Ltd | Optical waveguide and method of manufacturing the same |
| US20040096181A1 (en) * | 2002-11-19 | 2004-05-20 | Bintz Louis J. | Electro-optic polymer waveguide devices incorporating organically modified sol-gel clads |
| US20040131303A1 (en) * | 2002-11-21 | 2004-07-08 | Nippa David W. | Embedded electrode integrated optical devices and methods of fabrication |
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