CN100359645C - Laser machinining - Google Patents
Laser machinining Download PDFInfo
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- CN100359645C CN100359645C CNB038238055A CN03823805A CN100359645C CN 100359645 C CN100359645 C CN 100359645C CN B038238055 A CNB038238055 A CN B038238055A CN 03823805 A CN03823805 A CN 03823805A CN 100359645 C CN100359645 C CN 100359645C
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- liquid
- halohydrocarbon
- mixtures
- liquids
- halides
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Abstract
A silicon body W is machined with a UV or green laser beam 6 in a refrigerated liquid halide compound environment. Local heating with the laser beam of the liquid halide compound in the vicinity of a machining location is sufficient to cause a chemical reaction between the silicon body and the liquid halide compound which accelerates machining, enhances machining quality and reduces laser machining generated debris.
Description
Technical field
The present invention relates to laser processing, particularly contain the laser processing of the entity of at least quite most of silicon.
Background technology
Silicon and all halogen vigorous reaction generation silicon tetrahalogens.Therefore, silicon and fluorine, F
2, chlorine, Cl
2, bromine, Br
2With iodine, I
2Reaction generates silicon fluoride, SiF respectively
4, silicon chloride, SiCl
4, silicon bromide, SiBr
4With iodate silicon, SiI
4At room temperature carry out with the reaction of fluorine, and other reactions require to be heated to more than 300 ℃.
Si+F
2=SiF
4(gas)
Si+Cl
2=SiCl
4(gas)
Learn that from US5266532A and US5322988A the ablation speed of silicon has been accelerated in the existence of halohydrocarbon.The example of halohydrocarbon-pasc reaction is
Si+CF
4=SiF
4(gas)+C (solid)
Reaction between halohydrocarbon and the silicon is not spontaneous.This reaction only just can take place under the energy of the fusion threshold value that is higher than silicon, therefore has very much polarization and is applicable to the application of single step silicon microfabrication, for example wafer cutting (wafer dicing), through hole (vias) and patterned surface.
Summary of the invention
An object of the present invention is to provide compared with prior art improved silicon processing.
According to first aspect of the present invention, a kind of method with the ultraviolet ray or the laser beam machine silicon body (silicon body) of green visible wavelength is provided, wherein processing comprises and processes one of through-hole structure and cutting channel at least, this method comprises the following steps:
A. at least one Working position at the silicon body provides liquid halides or comprises halohydrocarbon and the environment of the liquid of other mixtures of liquids;
B. laser beam is aligned in liquid halides or comprises the Working position of the silicon body in the liquid environment of halohydrocarbon and other mixtures of liquids;
C. near the Working position of silicon body with laser beam localized heating liquid halides or comprise the liquid of halohydrocarbon and other mixtures of liquids, degree of heat be enough to this Working position cause silicon body and liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids between chemical reaction; With
D. use laser beam at Working position machine silicon body, thus at the Working position initiating chamical reaction to generate gas and solia particle accessory substance; With
E. from liquid halides or comprise the environment of liquid of halohydrocarbon and other mixtures of liquids and discharge gaseous by-product, and make solid by-product be dispersed in liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids in.
Advantageously, provide the step of liquid halide compound environment to comprise a kind of liquid halocarbon environment is provided.
Easily, the step of alignment comprises the laser beam of aiming at the UV wavelength.
Perhaps, the step of alignment comprises the laser beam of aiming at green visible wavelength.
Easily, providing the step of liquid halide compound environment to comprise provides to be used for a receiving fluids halide environments simulation box.
Preferably, provide the step of liquid halides to comprise the liquid halides that a kind of cooling is provided.
Advantageously, provide the step of the liquid halides of cooling be included in first being processed, among and the temperature of the liquid halides of control cooling afterwards.
Perhaps, provide the step of liquid halide compound environment to comprise the aerosol spray mouth device that is provided for carrying to Working position at least liquid halides.
Easily, provide the step of liquid halide compound environment to comprise a kind of halohydrocarbon that contains the halogen that is selected from fluorine, chlorine, bromine and iodine is provided.
Advantageously, the step of machine silicon body comprises that the temperature of control silicon body is fully to prevent the fire damage to the silicon body by the heat load of controlling the silicon body.
According to second aspect of the present invention, a kind of laser process equipment that is used for the machine silicon body is provided, wherein processing comprises and processes one of through-hole structure and cutting channel at least that this equipment comprises: a ultraviolet ray or green visible wavelength lasers device; Environment control unit is used for providing liquid halides or comprise halohydrocarbon and the controlled environment of the liquid of other mixtures of liquids on the Working position of silicon body at least; The beam alignment device, be used for being registered on the Working position from the laser beam of laser so as near the Working position of silicon body with laser beam localized heating liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids, degree of heat be enough to this Working position cause silicon body and liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids between chemical reaction, and with laser beam at Working position machine silicon body, thus at the Working position initiating chamical reaction to generate gas and solia particle accessory substance, make solid by-product be dispersed in liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids in; And gas vent, be used for discharging gaseous by-product from liquid halides or the environment that comprises the liquid of halohydrocarbon and other mixtures of liquids.
Advantageously, assembling is used to provide the device of controlled liquid halide compound environment so that the controlled fluid halocarbon environment to be provided.
Easily, the device that is provided for controlled liquid halide comprises environmental chamber means.
Preferably, environmental chamber means comprises the bath apparatus of the liquid halides that is used to cool off.
Easily, environmental chamber means comprises an import and outlet that is used for liquid halides, also comprises gas vent.
Preferably, environmental chamber means comprises a window that can see through laser beam, with so that laser beam enter in the environmental chamber means.
Preferably, this window scribbles antireflecting coating.
Preferably, laser process equipment further comprises and is used for providing cooling liquid halid refrigerating plant to environmental chamber means.
Advantageously, assemble this refrigerating plant in case first being processed, among and the halid temperature of controlling liquid afterwards.
Preferably, be used to provide the device of controlled liquid halide compound environment to comprise the aerosol spray mouth device that is used for carrying to Working position at least liquid halides.
Easily, laser is launched with ultraviolet wavelength.
Perhaps, laser is launched with green visible wavelength.
Preferably, laser process equipment further comprises and is used to control entity to be processed temperature control equipment in the temperature of Working position, assembles this device fully to prevent the fire damage to this entity by the heat load of controlling this entity.
Easily, laser process equipment further comprises the telecentric lens arrangement that is used for alignment, and wherein Leng Que liquid halides stream is full of the visual field of telecentric lens.
Description of drawings
According to hereinafter with reference to accompanying drawing to only as an example the description of some embodiments of the present invention, can understand the present invention more thoroughly, wherein:
Fig. 1 is the perspective diagram according to laser process equipment of the present invention; With
Fig. 2 is the plane graph of the equipment of Fig. 1.
In these figure, the identical identical parts of reference number representative.
Embodiment
With reference to Fig. 1 and 2, laser process equipment 1 comprises the stainless steel casing that has liquid-inlet 3, liquid outlet 4 and gas vent 5.Optical system 10 is installed in this shell top.Finish the liquid bath of sealing by the window 15 that scribbles antireflecting coating, this window can see through laser beam so that the UV laser beam is entered on the silicon wafer W in the bath.Perhaps, can use the laser beam of transmitting green visible light.
During use, wafer W is placed shell 2, and during the cooling liquid halide of HFC-134a and so on bathed via import 3 suction.Perhaps, can use some other liquid halides, the particularly liquid halocarbon of making by the halogen of fluorine, chlorine, bromine or iodine and so on.Import 3 and outlet 4 are refrigerating circuits, are equal to or less than the halid gas transition temperature of particular fluid so that fluid temperature is remained on.This is bathed to small part liquid is housed.
Can first being processed, among and control the temperature of substrate W to be processed and the temperature of active fluid afterwards so that improve working (machining) efficiency and crudy.
Can change the wafer substrates W temperature in the environment around,, thereby in laser processing procedure, realize better thermal control so that by reducing the heat load in the substrate and prevent fire damage thus to substrate.
UV restraints the process operation of Working position to expect that 6 alignment wafer W go up expectation.Partly, promptly on Working position, laser beam heats silicon makes that next-door neighbour's liquid also is heated to more than the gas transition temperature on every side, and the temperature of silicon and gas all is enough to produce reaction.In this case, most of accessory substances all are gas and discharge through gas vent 5.These solia particles are dispersed in the liquid and do not have redeposited on wafer surface.
The advantage of this system is that this system can be distributed on the relatively large zone of substrate surface to be processed liquid halides, realizes effective with consistent processing thus.For the laser processing of using through-hole structure, cutting channel (dice lanes) or the scribe lanes (scribe lanes) of on wafer substrates, carrying out, can make the visual field (for example common 50 millimeter * 50 millimeter sizes) of halogenation logistics optimization to be full of telecentric lens fully of cooling based on galvanometric scanner, telecentric lens and linear XY mechanical stage.Because cooling halide all exists and need not mobile XY platform, can process parts to be processed all in this visual field very effectively in whole visual field.Similarly, because the even substep of cooling halide in the visual field can carry out consistent processing (being that they have the similar degree of depth and quality) to all parts in the visual field.
Therefore, the invention provides very effective and high-quality laser processing as can be seen.
The invention is not restricted to above-mentioned embodiment, but can on structure and details, change.For example, liquid can contain halohydrocarbon and other mixtures of liquids.Similarly, environmental chamber can partly be equipped with the halohydrocarbon liquid of cooling, and remainder is gassy then.Not only UV can be used in addition, green laser can also be used.Can there be more than one import in addition so that in environmental chamber, add other liquid or gas.
Although the present invention is described the machine silicon body, the present invention can be used for processing any entity that contains quite most of silicon at least.An example of this entity is the sandwich construction that contains several layers of semiconductor, metal, interlayer dielectric and ceramic material.This sandwich construction can partly or entirely be processed in environmental chamber, wherein selects fluid type and optical maser wavelength so that each material layer is carried out the most effective processing.Between the processing of different layers, fluid type can be replaced to down the optimal one other fluid of processing of one deck.
After in environmental chamber, carrying out laser processing, take out substrate, if desired, can use the conventional art of rotation-rinsing-drying, ultrasonic waves for cleaning and megahertz level ultrasonic wave (megasonic) cleaning and so on to clean.
Claims (24)
1. method with the ultraviolet ray or the laser beam machine silicon body of green visible wavelength, wherein processing comprises and processes one of through-hole structure and cutting channel at least, this method comprises the following steps:
A. at least one Working position at the silicon body provides liquid halides or comprises halohydrocarbon and the environment of the liquid of other mixtures of liquids;
B. laser beam is aligned in liquid halides or comprises the Working position of the silicon body in the liquid environment of halohydrocarbon and other mixtures of liquids;
C. near the Working position of silicon body with laser beam localized heating liquid halides or comprise the liquid of halohydrocarbon and other mixtures of liquids, degree of heat be enough to this Working position cause silicon body and liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids between chemical reaction; With
D. use laser beam at Working position machine silicon body, thus at the Working position initiating chamical reaction to generate gas and solia particle accessory substance; With
E. from liquid halides or comprise the environment of liquid of halohydrocarbon and other mixtures of liquids and discharge gaseous by-product, and make solid by-product be dispersed in liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids in.
2. the method for claim 1 wherein saidly provides liquid halides or comprises halohydrocarbon and the step of the environment of the liquid of other mixtures of liquids comprises: provide a kind of and be used to hold described liquid halides or comprise halohydrocarbon and the environmental chamber of the liquid of other mixtures of liquids.
3. the method for claim 1 wherein saidly provides liquid halides or comprises halohydrocarbon and the step of the environment of the liquid of other mixtures of liquids comprises: a kind of liquid halides of cooling is provided or comprises halohydrocarbon and the liquid of the cooling of other mixtures of liquids.
4. method as claimed in claim 3, the wherein said step of liquid that the liquid halides of cooling is provided or comprises the cooling of halohydrocarbon and other mixtures of liquids comprises: first being processed, among and the liquid halides of control cooling afterwards or comprise halohydrocarbon and the temperature of the liquid of the cooling of other mixtures of liquids.
5. the method for claim 1 wherein saidly provides liquid halides or comprises halohydrocarbon and the step of the environment of the liquid of other mixtures of liquids comprises: be provided for carrying described liquid halides or comprising halohydrocarbon and the aerosol spray mouth device of the liquid of other mixtures of liquids to Working position at least.
6. the method for claim 1 wherein saidly provides liquid halides or comprises halohydrocarbon and the step of the environment of the liquid of other mixtures of liquids comprises: the halohydrocarbon that contains the halogen that is selected from fluorine, chlorine, bromine and iodine is provided.
7. the method for claim 1 wherein saidly provides liquid halides or comprises halohydrocarbon and the step of the environment of the liquid of other mixtures of liquids comprises a sharp HFC-134a environment is provided.
8. the method for claim 1, the step of wherein said machine silicon body comprises: the temperature of control silicon body fully prevents fire damage to the silicon body with the heat load by control silicon body.
9. the method for claim 1, the step of wherein said machine silicon body comprise that processing contains the entity of silicon.
10. method as claimed in claim 9, the step of the entity that wherein said processing is siliceous comprises the processing sandwich construction.
11. method as claimed in claim 10, wherein said processing sandwich construction comprise that processing has the sandwich construction of multi-lager semiconductor, metal, interlayer dielectric and ceramic material.
12. a laser process equipment that is used for the machine silicon body, wherein processing comprises and processes one of through-hole structure and cutting channel at least that this equipment comprises:
A ultraviolet ray or green visible wavelength lasers device;
Environment control unit is used for providing liquid halides or comprise halohydrocarbon and the controlled environment of the liquid of other mixtures of liquids on the Working position of silicon body at least;
The beam alignment device, be used for being registered on the Working position from the laser beam of laser so as near the Working position of silicon body with laser beam localized heating liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids, degree of heat be enough to this Working position cause silicon body and liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids between chemical reaction, and with laser beam at Working position machine silicon body, thus at the Working position initiating chamical reaction to generate gas and solia particle accessory substance, make solid by-product be dispersed in liquid halides or comprise halohydrocarbon and the liquid of other mixtures of liquids in; With
Gas vent is used for discharging gaseous by-product from liquid halides or the environment that comprises the liquid of halohydrocarbon and other mixtures of liquids.
13. laser process equipment as claimed in claim 12, the described environment control unit of controlled environment that wherein is used to provide liquid halides or comprises the liquid of halohydrocarbon and other mixtures of liquids is assembled so that the controlled fluid halocarbon environment to be provided.
14. laser process equipment as claimed in claim 12, the described environment control unit of controlled environment that wherein is used to provide liquid halides or comprises the liquid of halohydrocarbon and other mixtures of liquids comprises environmental chamber means.
15. laser process equipment as claimed in claim 14, wherein said environmental chamber means comprises the bath apparatus of the liquid halides that is used to cool off.
16. laser process equipment as claimed in claim 14, wherein said environmental chamber means comprise an import and outlet that is used for liquid halides, also comprise described gas vent.
17. laser process equipment as claimed in claim 14, wherein said environmental chamber means comprise a window that can see through laser beam, with so that laser beam enter in the described environmental chamber means.
18. laser process equipment as claimed in claim 17, wherein this window scribbles antireflecting coating.
19. laser process equipment as claimed in claim 14 comprises being used for the liquid halides of cooling being provided or comprising halohydrocarbon and the refrigerating plant of the liquid of other mixtures of liquids to described environmental chamber means.
20. laser process equipment as claimed in claim 19, wherein assemble described refrigerating plant in case first being processed, among and control described liquid halides afterwards or comprise halohydrocarbon and the temperature of the liquid of other mixtures of liquids.
21. comprising, laser process equipment as claimed in claim 12, the described environment control unit of environment that wherein is used to provide liquid halides or comprises the liquid of halohydrocarbon and other mixtures of liquids be used for carrying liquid halides or comprising halohydrocarbon and the aerosol spray mouth device of the liquid of other mixtures of liquids to Working position at least.
22. laser process equipment as claimed in claim 12 comprises the temperature control equipment that is used to control the temperature of silicon body on Working position to be processed, assembles this device fully to prevent the fire damage to the silicon body by the heat load of controlling the silicon body.
23. laser process equipment as claimed in claim 19, wherein, described beam alignment device comprises the telecentric lens arrangement that is used for alignment, and wherein Leng Que liquid halides stream is full of the visual field of telecentric lens.
24. laser process equipment as claimed in claim 12, the wherein said environment control unit of controlled environment that is used to provide liquid halides or comprises the liquid of halohydrocarbon and other mixtures of liquids comprises the environment control unit that is used to provide a kind of HFC-134a environment.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IE2002/0655 | 2002-08-06 | ||
| IE20020655 | 2002-08-06 | ||
| GB0224585.0 | 2002-10-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1689145A CN1689145A (en) | 2005-10-26 |
| CN100359645C true CN100359645C (en) | 2008-01-02 |
Family
ID=35306414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038238055A Expired - Fee Related CN100359645C (en) | 2002-08-06 | 2003-08-06 | Laser machinining |
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| Country | Link |
|---|---|
| CN (1) | CN100359645C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105880847A (en) * | 2016-06-04 | 2016-08-24 | 吴江市三达五金工具厂 | Laser cutter equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59225896A (en) * | 1983-06-06 | 1984-12-18 | Semiconductor Energy Lab Co Ltd | Laser working method |
| JPS6153731A (en) * | 1984-08-24 | 1986-03-17 | Anritsu Corp | Etching method by ultraviolet ray and apparatus for the same |
| JPS6394657A (en) * | 1986-10-08 | 1988-04-25 | Nec Corp | Method and apparatus of laser processing |
| US5057184A (en) * | 1990-04-06 | 1991-10-15 | International Business Machines Corporation | Laser etching of materials in liquids |
| WO1995007152A1 (en) * | 1993-09-08 | 1995-03-16 | Uvtech Systems, Inc. | Surface processing |
| WO1997024768A1 (en) * | 1995-12-29 | 1997-07-10 | Pacific Solar Pty. Limited | Improved laser grooving and doping method |
| US20020050489A1 (en) * | 2000-10-26 | 2002-05-02 | Kabushiki Kaisha Toshiba | Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining |
-
2003
- 2003-08-06 CN CNB038238055A patent/CN100359645C/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59225896A (en) * | 1983-06-06 | 1984-12-18 | Semiconductor Energy Lab Co Ltd | Laser working method |
| JPS6153731A (en) * | 1984-08-24 | 1986-03-17 | Anritsu Corp | Etching method by ultraviolet ray and apparatus for the same |
| JPS6394657A (en) * | 1986-10-08 | 1988-04-25 | Nec Corp | Method and apparatus of laser processing |
| US5057184A (en) * | 1990-04-06 | 1991-10-15 | International Business Machines Corporation | Laser etching of materials in liquids |
| WO1995007152A1 (en) * | 1993-09-08 | 1995-03-16 | Uvtech Systems, Inc. | Surface processing |
| WO1997024768A1 (en) * | 1995-12-29 | 1997-07-10 | Pacific Solar Pty. Limited | Improved laser grooving and doping method |
| US20020050489A1 (en) * | 2000-10-26 | 2002-05-02 | Kabushiki Kaisha Toshiba | Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining |
Non-Patent Citations (1)
| Title |
|---|
| Laser-stimulated etching of n-Si in aqueous solutions. V. Svorcik, et al.Materials Letters,Vol.9 No.5, 6. 1990 * |
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| Publication number | Publication date |
|---|---|
| CN1689145A (en) | 2005-10-26 |
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