CN100358172C - Active organic electrolumniescence device and its mfg. method - Google Patents
Active organic electrolumniescence device and its mfg. method Download PDFInfo
- Publication number
- CN100358172C CN100358172C CNB2004100343671A CN200410034367A CN100358172C CN 100358172 C CN100358172 C CN 100358172C CN B2004100343671 A CNB2004100343671 A CN B2004100343671A CN 200410034367 A CN200410034367 A CN 200410034367A CN 100358172 C CN100358172 C CN 100358172C
- Authority
- CN
- China
- Prior art keywords
- electrode
- film transistor
- thin
- emitting diode
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000003491 array Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 91
- 238000002955 isolation Methods 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 27
- 239000011241 protective layer Substances 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 abstract description 21
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229920002521 macromolecule Polymers 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910019923 CrOx Inorganic materials 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The present invention discloses an active organic electrolumniescence element and a manufacturing method thereof. The active organic electrolumniescence element has a heat insulation structure. The organic electrolumniescence element comprises pixel areas, wherein pixel areas are provided with a plurality of arrays; each of the pixel areas at least comprises a thin film transistor, an organic light emitting diode and a heat insulation groove; the heat insulation groove is formed between the thin film transistor and the organic light emitting diode to keep that the second electrode of the organic light emitting diode and the thin film transistor are separated by a preset distance. The main aim of the present invention is to offer an active organic electroluminescent element which has the heat insulation structure to solve the problem of the degradation of the organic light emitting diode caused by the heat which is generated by the thin film transistor.
Description
Technical field
Relevant a kind of active formula organic electroluminescent device of the present invention and manufacture method thereof are particularly about a kind of active formula organic electroluminescent device (organic electroluminescentdevice) and manufacture method thereof with heat insulation structural.
Background technology
In recent years, along with the progress of electronic product Development Technology and increasingly extensive application thereof, it similarly is the city of asking of mobile phone, PDA and notebook computer, make the demand of comparing flat-panel screens with traditional monitor grow with each passing day, become and make one of important electron application product at present with smaller size smaller and power consumption characteristic.In the middle of flat-panel screens,, make the optimal selection that will become flat-panel screens of future generation undoubtedly of organic electroluminescent spare because organic electroluminescent spare has characteristics such as self-luminous, high brightness, wide viewing angle, high answer speed and technology is easy.
Organic Light Emitting Diode (organic light emitting diode, OLED) for using the light-emitting diode of organic layer as active layer (active layer), gradually, be used in recent years on the flat panel display (flatpanel display), can divide into passive type organic electroluminescent (PM-OLED) and active formula organic electroluminescent (AM-OLED) display according to type of drive.
The passive type organic electroluminescent device is mainly driven merely via the XY matrix electrodes.Because the passive type organic electroluminescent device is to carry out with the linear precedence type of drive, when scan line (scanninglines) increases to hundreds of when above, desired moment brightness (instantaneous brightness) is hundreds of times that observe brightness, therefore, the immediate current amount of generation is also up to hundreds of times.So big power consumption makes Organic Light Emitting Diode produce a large amount of heat, has improved the operating temperature of Organic Light Emitting Diode simultaneously.Yet the raising of operating temperature easily makes and thus, easily causes the reduction of the luminous efficiency and the component life of organic electroluminescent device by speeding up of Organic Light Emitting Diode deterioration.
Developing the organic electroluminescent device with high-luminous-efficiency and long life is one of main trend of present plane Display Technique.Therefore, (thin film transistor, active formula organic electroluminescent device TFT) is suggested the collocation thin-film transistor, with the problem of avoiding the passive type organic electroluminescent device to be produced.Because active formula display of organic electroluminescence has the luminous feature of face, self luminous high-luminous-efficiency and low driving voltage advantages such as (driving voltage), and have wide viewing angle, high contrast, high answer speed (high-response speed), reach characteristic such as full-colorization.Do bigger and bigger when the size of display, the requirement of resolution is more and more higher, and under the situation of full-colorization demand, active formula organic electroluminescent will become the optimal selection of full-colorization flat-panel screens of future generation undoubtedly.
Please refer to Fig. 1, show a kind of plane schematic diagram of existing active formula organic electroluminescent device pixel region.This active full-colorization of formula organic electroluminescent device includes the pixel region 10 of a plurality of arrays, and as shown in Figure 1, this pixel region 10 consists predominantly of two thin- film transistors 11 and 13, electric capacity 15 and an Organic Light Emitting Diode 17.In each pixel region 10, also include data wire 12,14 and two scan lines 16 that extend along directions X of source electrode line (source line) that extend along directions X that extend along the Y direction and constitute.Wherein, this Organic Light Emitting Diode 17 is with the anode of a transparency electrode 21 as this Organic Light Emitting Diode.
Please refer to Fig. 2, it is pixel region 10 cross-sectional view corresponding to Figure 1A-A ' tangent line.This thin-film transistor 13 and this Organic Light Emitting Diode 17 are formed on the transparency carrier 5, and wherein this thin-film transistor 13 comprises a grid 31, an insulating barrier 32, an amorphous silicon layer 33, a doped amorphous silicon layer 34, one source pole 36, a drain electrode 35 and one silicon nitride layer 37.The step that forms this Organic Light Emitting Diode 17 is for after the technology of finishing this thin-film transistor 13, and the transparency electrode 21 that forms a patterning is on this transparency carrier 5, and the smooth property covered formation one luminescent layer 23 and an aluminum metal electrode 25 are in said structure.
Though above-mentioned active formula organic electroluminescent device can significantly reduce the magnitude of current by Organic Light Emitting Diode 17, and then avoid Organic Light Emitting Diode 17 heat energy a large amount of because of power consumption produces.Yet, this active formula organic electroluminescent device be with this thin-film transistor 13 as its drive circuit, a large amount of electric currents can be flowed through as the amorphous silicon layer 33 of thin-film transistor 13 raceway grooves (channel).Because this amorphous silicon layer 33 be semi-conductor layer, the electric current that its resistance can cause flowing through produces power consumption and passes and change a large amount of heat into, makes the operating temperature increase of active formula organic electroluminescent device.Please refer to Fig. 3, it shows the empirical value that thin-film transistor is placed high temperature furnace, by among the figure as can be known, under 50～80 ℃ situation, temperature causes any impact hardly to the film crystal tube lifetime.Review Organic Light Emitting Diode, please refer to Fig. 4, it is presented under the different operating temperature, the relation of Organic Light Emitting Diode voltage and brightness.As shown in Figure 4, when operating temperature rises, can find significantly that Organic Light Emitting Diode voltage has sizable difference to the characteristic of brightness, and this characteristic also directly has influence on the useful life of Organic Light Emitting Diode, that is to say that higher operating temperature can cause the degradation speed of Organic Light Emitting Diode to be accelerated.
Therefore, developing and brand-new active formula organic electroluminescent device structure and technology, effectively to avoid the influence to Organic Light Emitting Diode of heat that thin-film transistor produces, is the emphasis of needing research on the present active formula organic electroluminescent device technology badly.
Summary of the invention
In view of this, in order to address the above problem, main purpose of the present invention is under the prerequisite that does not increase process complexity, improve and design at the dot structure of active formula organic electroluminescent device, so that a kind of active formula organic electroluminescent device with heat insulation structural to be provided, with the problem of solution, and then increase active formula organic electroluminescent device luminous efficiency and useful life because of the Organic Light Emitting Diode deterioration that heat energy was caused of thin-film transistor generation.
Moreover another object of the present invention is for providing a kind of manufacture method of active formula organic electroluminescent device, to form the active formula organic electroluminescent device with heat insulation structural of the present invention.
For reaching above-mentioned purpose of the present invention, active formula organic electroluminescent device with heat insulation structural of the present invention, it includes the pixel region of a plurality of arrays, and wherein each pixel region includes thin-film transistor and Organic Light Emitting Diode is formed on the substrate.This thin-film transistor includes semiconductor layer, grid, source electrode and drain electrode; And this Organic Light Emitting Diode include first electrode form on this substrate, and organic electro luminescent layer and second electrode be formed on this first electrode.Wherein, this pixel region also includes the thermal isolation groove, and this thermal isolation groove shaped is formed between this thin-film transistor and this Organic Light Emitting Diode, to keep the semiconductor layer interval preset distance of this Organic Light Emitting Diode and this thin-film transistor.
In addition, the active formula organic electroluminescent device with heat insulation structural of the present invention can also the another way performance.
This active formula organic electroluminescent device includes the pixel region of a plurality of arrays, wherein each pixel region include thin-film transistor and insulating barrier is formed on the substrate, first electrode is formed on this insulating barrier, protective layer is formed at this thin-film transistor and this first electrode of part on and organic electro luminescent layer and second electrode be formed on this first electrode.Wherein, this thin-film transistor includes semiconductor layer, grid, source electrode and the drain electrode of semiconductor layer, doping, and the zone that this first electrode, this organic electro luminescent layer and this second electrode change mutually constitutes OLED.This pixel region also includes the thermal isolation groove, and this thermal isolation groove shaped is formed between this thin-film transistor and this Organic Light Emitting Diode, to keep the semiconductor layer interval specific range of this Organic Light Emitting Diode and this thin-film transistor.
According to the active formula organic electroluminescent device with heat insulation structural of the present invention, can comprise that also light shield layer is formed on this protective layer, wherein this light shield layer shields this semiconductor layer at least.In addition, in this thermal isolation groove, insert the material of low heat conduction coefficient.
According to the active formula organic electroluminescent device with heat insulation structural of the present invention, wherein this substrate can be printing opacity or lighttight substrate.In this first electrode and this second electrode at least one is transparency electrode, and this active formula organic electroluminescent device can be luminous by its substrate-side, or is top luminous (top-emission) element, also can be lighting at two sides type element.
According to the active formula organic electroluminescent device with heat insulation structural of the present invention, this thermal isolation groove can be via graphical this second electrode of etching mode and forms.And this thermal isolation groove also can be via graphical this second electrode of etching mode and this organic electro luminescent layer and forms.
For reaching another purpose of the present invention, the present invention also provides a kind of manufacture method of active formula organic electroluminescent device of tool heat insulation structural, at first, substrate is provided, and form a plurality of polycrystalline SiTFTs and insulating barrier on this substrate, wherein this thin-film transistor includes semiconductor layer, grid, source electrode and the drain electrode of semiconductor layer, doping.Then, form first electrode on this insulating barrier.After forming this first electrode, form protective layer on this first electrode of this thin-film transistor and part.Then; be formed with the organic electroluminescent layer and second electrode continuously on all surface of this substrate; and cover this first electrode and this protective layer substantially, wherein the zone that changes mutually of this first electrode, this organic electro luminescent layer and this second electrode constitutes OLED.At last, graphical this second electrode, to form the thermal isolation groove, wherein this thermal isolation groove makes the semiconductor layer interval specific range of this Organic Light Emitting Diode and this thin-film transistor.
Manufacture method according to the active formula organic electroluminescent device of tool heat insulation structural of the present invention; forming this protective layer after the step of this thin-film transistor and this first electrode partly; can more comprise and form light shield layer on this protective layer, to cover this semiconductor layer at least.And in the step of graphical this second electrode, can this protective layer as etching stopping layer, to form the thermal isolation groove.In addition, after graphical this second electrode is with the step that forms the thermal isolation groove, comprise that more the material of inserting low heat conduction coefficient is in this groove.
For above-mentioned purpose of the present invention, feature can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the plane schematic diagram that shows existing active formula organic electroluminescent device pixel region;
Fig. 2 is the generalized section that shows existing active formula organic electroluminescent device pixel region;
Fig. 3 is for showing thin-film transistor under different operating temperatures, the graph of a relation of usefulness and service time;
Fig. 4 shows OLED under different operating temperatures, the graph of a relation of voltage and brightness;
Fig. 5 is the plane schematic diagram that shows according to a preferred embodiment of active formula organic electroluminescent device of the present invention;
Fig. 6 a to Fig. 6 f is the making flow process profile that shows according to a preferred embodiment of active formula organic electroluminescent device of the present invention;
Fig. 7 shows the heat distribution simulation that utilizes flotheam software that existing active formula organic electroluminescent device is done; And
Fig. 8 shows the heat distribution simulation that utilizes flotheam software that active formula organic electroluminescent device of the present invention is done.
Description of reference numerals
Prior art:
5～substrate; The pixel region of 10～organic electroluminescent device; 11,13～thin-film transistor; 12～data wire; 14～source electrode line; 15～electric capacity; 16～scan line; 17～Organic Light Emitting Diode; 21～transparency electrode; 23～luminescent layer; 25～aluminum metal electrode; 31～grid; 32～plasma display; 33～amorphous silicon layer; 34～doped amorphous silicon layer; 35～drain electrode; 36～source electrode; 37～silicon nitride layer; A-A '～along the hatching of A-A '.
The technology of the present invention:
The pixel region of 100～organic electroluminescent device; 101,107～thin-film transistor; 102～data wire; 103～electric capacity; 105～Organic Light Emitting Diode; 106～transparency conducting layer; 108～thermal isolation groove; 110～substrate; 112～insulating barrier; 121～grid; 123～semiconductor layer; The semiconductor layer of 124～doping; 125～source electrode; 126～drain electrode; 130～protective layer; 132～light shield layer; 134～organic electro luminescent layer; 136～metal electrode; 140～preset distance; The hatching of B-B '～B-B '.
Embodiment
The invention provides a kind of with the active formula organic electroluminescent device of thin-film transistor as driving element, its pixel region has a thermal isolation groove, can effectively completely cut off thermal energy conduction that thin-film transistor produced to Organic Light Emitting Diode, to avoid Organic Light Emitting Diode because of the too high deterioration of operating temperature.Below be the preferred embodiment of manufacture method of the active formula organic electroluminescent device of tool heat insulation structural of the present invention, existing conjunction with figs. is described in detail as follows.
Embodiment
Please refer to Fig. 5, its demonstration meets the pixel region plane schematic diagram of a preferred embodiment of the active formula organic electroluminescent device of tool heat insulation structural of the present invention, and this pixel region 100 consists predominantly of a thin-film transistor 101 and is coupled to data wire 102, a condenser storage 103, an Organic Light Emitting Diode 105 and a thin-film transistor 107 that extends along the Y direction and is coupled to this Organic Light Emitting Diode 105.And the present invention designs a thermal isolation groove 108 promptly at this thin-film transistor 107 and this Organic Light Emitting Diode 105, to avoid heat conduction that thin-film transistor 107 produces to Organic Light Emitting Diode 105.Fig. 6 a to Fig. 6 f is pixel region 100 cross-sectional view of a series of B-B ' tangent lines corresponding to Fig. 5, and it is used for illustrating the manufacturing process of a preferred embodiment of active formula organic electroluminescent device of the present invention.
At first, please refer to Fig. 6 a, the thin-film transistor 107 of this pixel region is formed on the substrate 110, and also has an insulating barrier 112 on this substrate 110.This thin-film transistor 107 includes a grid 121, semi-conductor layer 123, a semiconductor layer 124 that mixes, one source pole 125 and a drain electrode 126, and wherein this semiconductor layer 123 can be amorphous silicon semiconductor layer, organic semiconductor thin-film layer or via the polysilicon semiconductor layer of low temperature process gained.The present invention is for employed thin-film transistor kind and unrestricted, this thin-film transistor 107 can for example be embedded thin-film transistor or heap base formula thin-film transistor, and illustrated thin-film transistor structure only is the example in the existing grid structure, non-herein pass feature of the present invention, non-foundation for the restriction scope of the invention; And this insulating barrier 112 can be an oxygen containing silicide layer, forming this insulating barrier 112 after the step on this substrate 110, can more use a chemical mechanical milling tech that planarization is carried out on the surface of this insulating barrier.This smooth insulating barrier 112 after helping electrode surface roughness formed thereon lower, to avoid element short circuit and leakage current.According to the present invention, substrate 110 can be a printing opacity or lighttight substrate, for example glass, pottery or plastic base, but in this preferred embodiment, be one to be example by the luminous organic electroluminescent device of substrate-side, so employed substrate is a transparent substrates, a glass substrate for example.
Then, please refer to Fig. 6 b, form a transparency conducting layer 106 on this insulating barrier 112.This transparency conducting layer 106 can be indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO).And this transparency conducting layer 106 can be formed by sputtering method, electron beam evaporation plating method, hot vapour deposition method, chemical gaseous phase coating method and spray pyrolysis method.This transparency conducting layer 106 is the anode electrodes as the Organic Light Emitting Diode of follow-up formation.
Then, shown in Fig. 6 c, compliance forms a protective layer 130 on this transparency conducting layer 106 of this thin-film transistor 107 and part, to cover this thin-film transistor 107 and this transparency conducting layer 106 of part.This protective layer 130 can be dielectric material or organic material, if dielectric material, then this protective layer 130 can be in the group that oxide, carbide, nitride and the composition thereof of insulation form, and similarly is silica (SiOx), aluminium oxide (AlOx), magnesium oxide (MgO), silicon nitride (SiNx), aluminium nitride (AlNx) or magnesium fluoride (MgFx) etc.; This coating layer also can be organic material, similarly is acrylic resin (acrylic resin), polyimides (polyimide) or the transparent photoresist material that can utilize sensitization or be heating and curing.
In the technology of organic electroluminescent device,, before being formed with organic electroluminescent layer, can carry out the surface modification program to this transparency conducting layer 106 earlier in order to increase the usefulness of organic light-emitting diode element.Please refer to Fig. 6 d, for avoiding this semiconductor layer 123 of employed UV light injury in the surface modification program, be to form a light shield layer 132 on this protective layer 130, and these light shield layer 132 formed zones is to shield this semiconductor layer 123 at least.The optional usefulness of the composition of this light shield layer 132 has the individual layer material (as: CrOx) of light tight and insulation or contains the double-decker (as: polyimides/carbon black) of macromolecule resin.
Please refer to Fig. 6 e, then, the smooth in regular turn property covered formation one organic electro luminescent layer 134 and a metal electrode 136 are in said structure, so that this organic electro luminescent layer 134 contacts with the upper surface of this transparency conducting layer 106, and this metal electrode 136 is to contact with the upper surface of this organic electro luminescent layer 134.This transparency conducting layer 106, this organic electro luminescent layer 134 and this metal electrode 136 formed heaps are built structure and are constituted Organic Light Emitting Diode 105 of the present invention.Wherein, this organic electro luminescent layer 134 can be micromolecule or macromolecule electroluminescent organic material, and can be the Organic Light Emitting Diode material layer or the stacking formation of closing of multilayer electroluminescent organic material of individual layer.If the micromolecule electroluminescent organic material can utilize the vacuum evaporation mode to form; If the macromolecule electroluminescent organic material then can use modes such as rotary coating, ink-jet or screen painting to be formed with the OLED material layer; The material of this metal electrode 136 can be selected from the metal material or the composite material of Ca, Ag, Mg, Al, Li and other low working function, and generation type can be vacuum thermal evaporation or sputtering way.
At last, shown in Fig. 6 f, from the semiconductor layer 123 of this thin-film transistor 107 a preset distance 140 places near these Organic Light Emitting Diode 105 sides, with graphical this metal electrode 136 of etching mode to form a thermal isolation groove 108.In addition, this thermal isolation groove 108 also can further be formed in this organic electro luminescent layer 134.The mode that forms this thermal isolation groove 108 can be and forms a patterned photoresist layer on this metal electrode 136; and with protective layer 130 as etching stopping layer; (reactive ion etching RIE) removes this metal electrode 136 and this organic electro luminescent layer 134 that is not covered by this photoresist layer with reactive ion etching.The width of this thermal isolation groove 108 then can be not less than 1nm.So far finish the manufacture method with active formula organic electroluminescent device of thermal isolation structure of the present invention.
Please refer to Fig. 5 and Fig. 6 f; in the preferred embodiment of the invention described above; be that metal electrode 136 at comprehensive evaporation carries out graphically with etching mode; forming a thermal isolation groove 108 between this thin-film transistor 107 and Organic Light Emitting Diode as drive circuit, and this thermal isolation groove 108 hollows out to exposing this protective layer 130.After finishing encapsulation, promptly be nitrogen environment in this active formula organic electroluminescent device, it is interior to form a thermal isolation structure that nitrogen can be inserted this thermal isolation groove 108, is equivalent to add in the heat conduction path originally one air dielectric.The coefficient of heat conduction (237W/mK) compared to aluminum metal, the coefficient of heat conduction of nitrogen medium (0.0338W/mK) can be said so extremely low, therefore, thermal isolation groove of the present invention can reach and make heat conduct to the purpose of this Organic Light Emitting Diode via this metal electrode 136.
Fig. 7 and Fig. 8 are respectively the heat distribution simulation of using flotheam software to be done.Wherein, heat source position is in coordinate (0,0), and temperature is 60 ℃; This thermal source is of a size of 5 μ m * 5 μ m; Substrate size is 5mm * 5mm; Thickness of glass is 0.7mm; The thickness of aluminium electrode (second electrode) is 100 μ m; And the heat conduction efficiency of glass, aluminium and air (thermal conductivity) is respectively 1.4W/m-k, 170W/m-k, reaches 0.0338W/m-k.
Fig. 7 is the heat distribution situation of existing active formula organic electroluminescent device, and Fig. 8 is the heat distribution situation with active formula organic electroluminescent device of heat insulation structural of the present invention, therefore, learn that by knowing among the figure heat that thin-film transistor produced can effectively be completely cut off because of this thermal isolation groove.
In sum, active formula organic electroluminescent device with heat insulation structural of the present invention, be in heat insulation mode, at near the thin-film transistor of this Organic Light Emitting Diode around it main heat conduction path plan, make the heat that this thin-film transistor produced in non-luminous region, transmit as much as possible, to solve problem because of the Organic Light Emitting Diode deterioration that heat energy was caused that thin-film transistor was produced.
Though the present invention with a preferred embodiment openly as above; but it is not in order to limit the present invention; those skilled in the art are under the situation that does not break away from the spirit and scope of the present invention; should do a little change and retouching, so protection scope of the present invention is worked as with being as the criterion that claims were defined.
Claims (10)
1. active formula organic electroluminescent device, its pixel region that includes a plurality of arrays is formed on the substrate, and wherein each pixel region comprises:
Thin-film transistor;
Organic Light Emitting Diode; And
The thermal isolation groove is arranged between the semiconductor layer of this Organic Light Emitting Diode and this thin-film transistor.
2. active formula organic electroluminescent device as claimed in claim 1, wherein this Organic Light Emitting Diode includes first electrode, organic electro luminescent layer and second electrode, and wherein second electrode of this Organic Light Emitting Diode is connected with second electrode of adjacent Organic Light Emitting Diode.
3. active formula organic electroluminescent device as claimed in claim 2, wherein this thin-film transistor includes semiconductor layer, grid, source electrode and drain electrode, and this thermal isolation groove is arranged in this second electrode, and between this semiconductor layer and this Organic Light Emitting Diode of this thin-film transistor.
4. active formula organic electroluminescent device as claimed in claim 3, wherein this thermal isolation groove is arranged in this second electrode and this organic electro luminescent layer, and between this semiconductor layer and this Organic Light Emitting Diode of this thin-film transistor.
5. active formula organic electroluminescent device as claimed in claim 1 is wherein inserted the material of low heat conduction coefficient in this thermal isolation groove.
6. active formula organic electroluminescent device as claimed in claim 5, wherein the width of this thermal isolation groove is to be not less than in the scope of 1nm.
7. active formula organic electroluminescent device, its pixel region that includes a plurality of arrays is formed on the substrate, and wherein each pixel region comprises:
Thin-film transistor and insulating barrier are formed on this substrate, and wherein this thin-film transistor includes semiconductor layer, grid, source electrode and the drain electrode of semiconductor layer, doping;
First electrode is formed on this insulating barrier;
Protective layer is formed on this first electrode of this thin-film transistor and part;
The organic electro luminescent layer and second electrode are formed on all surface of this substrate in succession, and cover this first electrode and this protective layer, and wherein the zone that changes mutually of this first electrode, this organic electro luminescent layer and this second electrode constitutes OLED; And
The thermal isolation groove is arranged in this second electrode, and between this thin-film transistor and this Organic Light Emitting Diode.
8. the manufacture method of an active formula organic electroluminescent device, it includes the following step:
Substrate is provided;
Form a plurality of polycrystalline SiTFTs on this substrate, wherein this thin-film transistor includes semiconductor layer, grid, source electrode and the drain electrode of semiconductor layer, doping;
Form insulating barrier in this substrate;
Form first electrode on this insulating barrier;
Form protective layer on this first electrode of this thin-film transistor and part;
Be formed with the organic electroluminescent layer and second electrode in succession on all surface of this substrate, and cover this first electrode and this protective layer, wherein the zone that changes mutually of this first electrode, this organic electro luminescent layer and this second electrode constitutes OLED; And
Graphical at the semiconductor layer of this thin-film transistor and this second electrode between this Organic Light Emitting Diode, to form the thermal isolation groove.
9. the manufacture method of active formula organic electroluminescent device as claimed in claim 8, in the step of graphical this second electrode, with this protective layer as etching stopping layer, to form the thermal isolation groove.
10. the manufacture method of active formula organic electroluminescent device as claimed in claim 8 after graphical this second electrode is with the step that forms the thermal isolation groove, comprises that also the material of inserting low heat conduction coefficient is in this groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100343671A CN100358172C (en) | 2004-04-14 | 2004-04-14 | Active organic electrolumniescence device and its mfg. method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100343671A CN100358172C (en) | 2004-04-14 | 2004-04-14 | Active organic electrolumniescence device and its mfg. method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1564642A CN1564642A (en) | 2005-01-12 |
| CN100358172C true CN100358172C (en) | 2007-12-26 |
Family
ID=34481491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100343671A Expired - Lifetime CN100358172C (en) | 2004-04-14 | 2004-04-14 | Active organic electrolumniescence device and its mfg. method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100358172C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101788680B (en) * | 2009-01-24 | 2014-08-20 | Ge医疗系统环球技术有限公司 | Detector module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0845770A1 (en) * | 1996-11-29 | 1998-06-03 | TDK Corporation | Organic electroluminescence display apparatus |
| CN1353464A (en) * | 2000-11-10 | 2002-06-12 | 株式会社半导体能源研究所 | Luminous device |
| CN1435894A (en) * | 2002-01-29 | 2003-08-13 | 国际商业机器公司 | Organic LED device and mfg. method thereof |
| US20040056591A1 (en) * | 2002-09-19 | 2004-03-25 | Samsung Sdi Co., Ltd. | Organic electroluminescent display and method of manufacturing the same |
-
2004
- 2004-04-14 CN CNB2004100343671A patent/CN100358172C/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0845770A1 (en) * | 1996-11-29 | 1998-06-03 | TDK Corporation | Organic electroluminescence display apparatus |
| CN1353464A (en) * | 2000-11-10 | 2002-06-12 | 株式会社半导体能源研究所 | Luminous device |
| CN1435894A (en) * | 2002-01-29 | 2003-08-13 | 国际商业机器公司 | Organic LED device and mfg. method thereof |
| US20040056591A1 (en) * | 2002-09-19 | 2004-03-25 | Samsung Sdi Co., Ltd. | Organic electroluminescent display and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1564642A (en) | 2005-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI231153B (en) | Organic electroluminescence display device and its fabrication method | |
| CN100539179C (en) | Organic electro-luminescent display unit and manufacture method thereof | |
| CN100479183C (en) | Pixel structure and organic EL component | |
| CN103762247A (en) | Thin film transistor, manufacturing method for thin film transistor, array substrate and organic light-emitting display panel | |
| US20160181348A1 (en) | Active matrix organic light-emitting display and display apparatus | |
| CN101043047A (en) | Display apparatus and method of manufacturing thereof | |
| CN106601778A (en) | OLED backboard and manufacturing method thereof | |
| KR100740132B1 (en) | Organic light emitting display | |
| CN1444426A (en) | Electroluminescence display device and its making method | |
| US20060197441A1 (en) | Array substrates for electroluminescent displays and methods of forming the same | |
| US20180224683A1 (en) | Tft substrate and manufacturing method thereof | |
| CN106992185A (en) | Thin film transistor base plate including its display and its manufacture method | |
| US7129636B2 (en) | Active matrix organic electroluminescent device and fabrication method thereof | |
| CN103839973A (en) | Active matrix organic light-emitting diode array substrate, manufacturing method and display device | |
| CN104966718A (en) | Manufacturing method of AMOLED backboard and AMOLED backboard structure | |
| CN101075635B (en) | Image displaying system | |
| CN104538421A (en) | OLED display substrate and manufacturing method of OLED display substrate | |
| US20180337049A1 (en) | Tft substrate and manufacturing method thereof | |
| CN103247762A (en) | Active type OLED (organic light-emitting diode) display device and manufacturing method thereof | |
| TWI239790B (en) | Organic light-emitting device and fabrication method thereof | |
| CN203674269U (en) | Thin film transistor, array substrate and organic light-emitting display panel | |
| CN106783924B (en) | OLED display panel and manufacturing method thereof | |
| CN100358172C (en) | Active organic electrolumniescence device and its mfg. method | |
| US20200335566A1 (en) | Tft array substrate and method for manufacturing the same and oled display panel | |
| CN100372099C (en) | Method for making organic light-emitting-diode panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20071226 |