CN100358130C - Radiator and production thereof - Google Patents
Radiator and production thereof Download PDFInfo
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- CN100358130C CN100358130C CNB2004100268191A CN200410026819A CN100358130C CN 100358130 C CN100358130 C CN 100358130C CN B2004100268191 A CNB2004100268191 A CN B2004100268191A CN 200410026819 A CN200410026819 A CN 200410026819A CN 100358130 C CN100358130 C CN 100358130C
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- heat abstractor
- layer
- catalyst
- preparation
- aluminium nitride
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Abstract
The present invention provides a radiator which comprises a base, an aluminium-titanium nitride layer formed on the base, a catalyst layer formed on the aluminium-titanium nitride layer, and a carbon nanotube formed on the catalyst layer. In addition, the present invention also provides a preparation method of the radiator, which comprises the following steps: providing the base; forming the aluminium-titanium nitride layer on the base; forming the catalyst layer on the aluminium-titanium nitride layer; growing out the carbon nanotube on the catalyst layer. The present invention uses the aluminium-titanium nitride layer as a diffusion impervious layer. The diffusion impervious layer can not only effectively prevent copper atoms from diffusing to the catalyst layer and reacting with catalyst particles to influence the growth of the carbon nanotube, but also ensure the high heat radiation efficiency of the radiator. In addition, using the preparation method provided by the present invention can prepare radiators with high heat radiation efficiency.
Description
[technical field]
The present invention relates to a kind of heat abstractor and preparation method thereof, especially relates to heat abstractor of a kind of high cooling efficiency and preparation method thereof.
[background technology]
In recent years, along with developing rapidly of information industry, the deal with data ability of the heater element (as central processing unit and video card heater element) that electronic installation is inner set is also more and more strong.Yet, follow the lifting of heater element arithmetic speed, the heat of its generation also increases considerably.For described heat is discharged rapidly, heater element can be moved under normal working temperature, to guarantee the quality of data processing, storage and transmission, on the surface of this heater element one heat abstractor is set usually and dispels the heat.
Heat abstractor generally comprises the radiator in order to distribute heat, and the thermal interfacial material between between heater element and radiator.
In recent years, because of the carbon nano-tube conductive coefficient high, so become the research focus of thermal interfacial material.Carbon nano-tube is curling seamless, the hollow tubular thing that forms of graphite linings that carbon atom forms, has excellent axial thermal conductivity, its conductive coefficient can reach 20000W/mK (be approximately copper product 50 times), can improve the heat conductivility between heater element and the radiator greatly, thereby improve the heat dispersion of this heat abstractor.
But the pedestal of existing radiator adopts copper product to make (the copper conductive coefficient can reach 402W/mK) mostly, then how to form orderly carbon nanotubes arranged at the copper substrate surface and become key with carbon nano-tube as the thermal interface material applications radiator.
In the prior art, for obtaining to be formed at orderly carbon nanotubes arranged in the radiator substrate, normally behind catalyst particles such as nickel deposited, iron, cobalt on the copper coin, again by the chemical vapour deposition technique carbon nano-tube.Yet, if direct catalyst particles such as nickel deposited, iron, cobalt on copper coin, because the copper atom diffusivity is very good, thus very easily be diffused into catalyst layer, thus react with the catalyst particle, cause growing the carbon nano-tube that can be applicable to heat abstractor smoothly.
For solving the problem that the copper atom diffusion influence carbon nano tube growth, need be on copper coin evaporation or sputter one deck barrier layer are to stop the generation of copper diffusion phenomena in advance, titanium nitride (TiN) material of using always in the manufacture of semiconductor is used on the barrier layer that proposes more at present.Disclose a kind of chemical gas-phase method depositing titanium nitride and copper metal layer Damascus technics No. 03114708.9 as Chinese patent application, this method is in a multi-cavity body vacuum equipment, successive sedimentation TiN barrier layer, Cu metallic film successively, and at H
2-N
2Carry out rapid thermal annealing in the atmosphere, thereby obtain grain size and all well-proportioned barrier layer of distribution of resistance and Cu metallic film.
But, the TiN barrier layer that said method provides, because the conductive coefficient of TiN is very little, only be 30W/mK, relative copper (the copper conductive coefficient can reach 402W/mK) and carbon nano-tube (conductive coefficient can reach 20000W/mK), heat transfer rate is very slow, thereby has limited the radiating efficiency of heat abstractor on the whole.
[summary of the invention]
Be the low problem of radiating efficiency of the heat abstractor that solves prior art, the purpose of this invention is to provide a kind of heat abstractor of high cooling efficiency.
Another object of the present invention provides the preparation method of above-mentioned heat abstractor.
For realizing purpose of the present invention, the invention provides a kind of heat abstractor, it comprises: cooling base, be formed at the aluminium nitride titanium layer on this cooling base, be formed at the metal solvent layer on this aluminium nitride titanium layer, be formed at the carbon nano-tube on this metal solvent layer.
For realizing another object of the present invention, the invention provides a kind of preparation method of heat abstractor, it comprises the steps: to provide a cooling base; On this cooling base, form an aluminium nitride titanium layer; On this aluminium nitride titanium layer, form a metal solvent layer; On this metal solvent layer, grow carbon nano-tube.
With respect to prior art, the present invention is as diffusion impervious layer with the aluminium nitride titanium layer, this barrier layer can prevent effectively that not only copper atom is diffused into metal solvent layer and catalyst particle reaction and influences the growth of carbon nano-tube, and the TiAlN conductive coefficient is higher, also can guarantee the high cooling efficiency of heat abstractor.
[description of drawings]
Fig. 1 is the structural representation of heat abstractor in the embodiment of the invention.
Fig. 2 is preparation method's flow chart of heat abstractor in the embodiment of the invention.
Fig. 3 is the formation method schematic diagram of aluminium nitride titanium layer in the embodiment of the invention.
Fig. 4 is the use schematic diagram of heat abstractor of the present invention.
[embodiment]
Please consulting Fig. 1 earlier, is the structural representation of the heat abstractor 5 of preferred embodiment of the present invention, and it comprises pedestal 1, is formed at the aluminium nitride titanium layer 2 on the pedestal 1, is formed at the catalyst layer 3 on the aluminium nitride titanium layer 2, is formed at the carbon nano-tube 4 on the catalyst layer 3.
Please consult Fig. 2 and Fig. 3 together, the preparation method of the heat abstractor 5 that preferred embodiment of the present invention provided is elaborated.
The preparation method of the heat abstractor 5 of preferred embodiment of the present invention may further comprise the steps: step 11 provides a pedestal 1; Step 12 forms an aluminium nitride titanium layer 2 on pedestal 1; Step 13 forms a catalyst layer 3 on aluminium nitride titanium layer 2; Step 14 grows carbon nano-tube 4 on catalyst layer 3.
Below in conjunction with embodiment each step is elaborated.
Metal have crystal boundary, and crystal boundary is a kind of fabulous diffusion path originally as crystalline texture for copper atom, add the metal that copper itself is a kind of high diffusion coefficient, therefore is easy to dissolve at low temperatures in the catalyst metal layer.The present invention is with the diffusion impervious layer of aluminium nitride titanium layer 2 as copper atom, and it is to add nitrogen-atoms by plasma processing in metallic aluminium and titanium, and nitrogen-atoms destroys the crystal structure of metallic aluminium and titanium, thereby eliminates crystal boundary, effectively stops the diffusion of copper atom.And TiAlN has high-melting-point, even at high temperature also do not dissolve each other with copper, conductive coefficient is higher, can guarantee the high cooling efficiency of heat abstractor 5.In addition, TiAlN is down anti-oxidant and keep its proper property at 1000 ℃, even in the forming process of catalyst layer 3, on aluminium nitride titanium layer 2, generate the aluminium oxide thin layer, aluminium oxide at high temperature also belongs to stable phase, and be one can effectively intercept the barrier layer that atom moves, thus can reduce copper atom be diffused into touch coal seam 3 and with wherein catalyst particle reaction, also can prevent from that catalyst particle in the catalyst layer 3 from diffusing out with copper atom simultaneously to combine and reacted away; The heat conductivility of aluminium oxide is also preferable, and its conductive coefficient is more than 30W/mK.Thereby the aluminium nitride titanium layer 2 of the heat abstractor 5 of present embodiment not only can effectively prevent the copper atom diffusion, and can guarantee the high cooling efficiency of heat abstractor 5.
In addition, heat abstractor of the present invention also can comprise that by metal radiating fins such as copper, aluminium, its section can be shapes such as U font, L font, and this radiating fin can utilize impact style to be formed at the another side of pedestal 1.
See also Fig. 4, be the use schematic diagram of heat abstractor 9 of the present invention.The heat that heater element 8 is produced is delivered to pedestal 1 through carbon nano-tube 4, catalyst layer 3 and aluminium nitride titanium layer 2, be delivered on the radiating fin 7 by pedestal 1 again, finally heat is dispersed on every side in the flow air, thereby finishes the heat dissipation of heat abstractor 9 by pedestal 1 and radiating fin 7.And, because carbon nano-tube 4, catalyst layer 3 and aluminium nitride titanium layer 2 all have good heat conductivility, can guarantee that the heat that heater element 8 is produced in time is discharged from, heater element 8 can be moved, under normal working temperature to guarantee the quality of data processing, storage and transmission.
Claims (10)
1. heat abstractor, it comprises: a cooling base, it comprises relative two surfaces; It is characterized in that: this a cooling base wherein surface is formed with an aluminium nitride titanium layer; Deposit a metal solvent layer on this aluminium nitride titanium layer; And growth has carbon nano-tube on this metal solvent layer.
2. heat abstractor as claimed in claim 1 is characterized in that described heat abstractor further includes radiating fin, and this radiating fin is formed at another surface of cooling base.
3. heat abstractor as claimed in claim 2 is characterized in that described cooling base and radiating fin are to be made of copper.
4. the preparation method of heat abstractor as claimed in claim 1, it comprises the steps: to provide a cooling base; Form an aluminium nitride titanium layer in this cooling base one surface; On this aluminium nitride titanium layer, form a metal solvent layer; On described metal solvent layer, grow carbon nano-tube.
5. the preparation method of heat abstractor as claimed in claim 4 is characterized in that, the method that forms an aluminium nitride titanium layer on a surface of this cooling base is sputtering method or vapour deposition method.
6. the preparation method of heat abstractor as claimed in claim 5 is characterized in that, this sputtering method or vapour deposition method are to carry out in nitrogen environment.
7. the preparation method of heat abstractor as claimed in claim 4 is characterized in that, the step that forms the metal solvent layer on this aluminium nitride titanium layer comprises: catalyst metal is formed at the TiAlN laminar surface; The cooling base that deposits catalyst metal is positioned in the air,, makes catalyst metal be oxidized to the catalyst oxide particle in about 10 hours of 300～400 ℃ of heat treatments; This catalyst oxide particle is reduced into nanoscale catalyst particle with reducibility gas.
8. the preparation method of heat abstractor as claimed in claim 7 is characterized in that, described catalyst metal comprises in nickel, iron, cobalt and the alloy thereof one or more.
9. the preparation method of heat abstractor as claimed in claim 7 is characterized in that, the deposition process of described catalyst metal comprises electron beam vapor deposition method, heat deposition method or sputtering method.
10. the preparation method of heat abstractor as claimed in claim 4 is characterized in that, growing carbon nano-tube on this catalyst layer is to realize by chemical vapour deposition technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100268191A CN100358130C (en) | 2004-04-08 | 2004-04-08 | Radiator and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100268191A CN100358130C (en) | 2004-04-08 | 2004-04-08 | Radiator and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1681111A CN1681111A (en) | 2005-10-12 |
| CN100358130C true CN100358130C (en) | 2007-12-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100268191A Expired - Fee Related CN100358130C (en) | 2004-04-08 | 2004-04-08 | Radiator and production thereof |
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| Country | Link |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2397440B1 (en) * | 2009-02-10 | 2019-11-20 | Zeon Corporation | Substrate for producing aligned carbon nanotube aggregates and method for producing the aligned carbon nanotube aggregates |
| CN104567047B (en) * | 2013-11-28 | 2017-10-31 | 康雪慧 | Using the heat collecting element resistant to hydrogen barrier layer and preparation method of TiAlN material |
| JP2016522996A (en) * | 2014-05-30 | 2016-08-04 | 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． | Heat dissipation structure and synthesis method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5990550A (en) * | 1997-03-28 | 1999-11-23 | Nec Corporation | Integrated circuit device cooling structure |
| US5990618A (en) * | 1996-01-12 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel and heat sink |
| US6407922B1 (en) * | 2000-09-29 | 2002-06-18 | Intel Corporation | Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader |
| WO2003011755A1 (en) * | 2001-07-27 | 2003-02-13 | University Of Surrey | Production of carbon nanotubes |
| CN2543119Y (en) * | 2001-12-27 | 2003-04-02 | 富准精密工业(深圳)有限公司 | Combination of cooling device |
-
2004
- 2004-04-08 CN CNB2004100268191A patent/CN100358130C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5990618A (en) * | 1996-01-12 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel and heat sink |
| US5990550A (en) * | 1997-03-28 | 1999-11-23 | Nec Corporation | Integrated circuit device cooling structure |
| US6407922B1 (en) * | 2000-09-29 | 2002-06-18 | Intel Corporation | Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader |
| WO2003011755A1 (en) * | 2001-07-27 | 2003-02-13 | University Of Surrey | Production of carbon nanotubes |
| CN2543119Y (en) * | 2001-12-27 | 2003-04-02 | 富准精密工业(深圳)有限公司 | Combination of cooling device |
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| Publication number | Publication date |
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| CN1681111A (en) | 2005-10-12 |
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