CN100357816C - Liquid crystal display unit - Google Patents
Liquid crystal display unit Download PDFInfo
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- CN100357816C CN100357816C CNB2004100346523A CN200410034652A CN100357816C CN 100357816 C CN100357816 C CN 100357816C CN B2004100346523 A CNB2004100346523 A CN B2004100346523A CN 200410034652 A CN200410034652 A CN 200410034652A CN 100357816 C CN100357816 C CN 100357816C
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- Prior art keywords
- collection region
- color filter
- viewing area
- pin
- lead collection
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- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 239000004020 conductor Substances 0.000 claims abstract description 45
- 239000011347 resin Substances 0.000 claims abstract description 18
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 9
- 239000000615 nonconductor Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 28
- 239000000758 substrate Substances 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000004941 influx Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 43
- 238000000034 method Methods 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000012860 organic pigment Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 239000012260 resinous material Substances 0.000 description 8
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 239000000049 pigment Substances 0.000 description 5
- 230000004224 protection Effects 0.000 description 5
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 3
- 150000004056 anthraquinones Chemical class 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- 238000010526 radical polymerization reaction Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- Liquid Crystal (AREA)
Abstract
The present invention relates to a liquid crystal display device which utilizes the technology that a color light filter is integrated with a thin film transistor array substrate (COA). When color light filters (R, G, B) or shade layer (BM) resin is formed on a glass substrate, a conductor wire influx zone and an outer pin connection zone beyond a plurality of outer connection pins are covered, which prevents a metal conductor wire from being exposed, increases the insulation characteristic between the outer connection pins, and improves the reliability of a product.
Description
Technical field
The present invention relates to a kind of LCD device, particularly relate to a kind of LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate (COA:Color Filter On Array) technology.
Background technology
General conventional thin film transistor LCD (TFT-LCD) panel is by a slice thin film transistor (TFT) (TFT:Thin-Film Transistor) face glass, form with another sheet colored filter (Color Filter) glass gluing, pour into liquid crystal molecule in the middle of two layers of glass again.And novel volume production technology, be after the glass of TFT panel is finished thin film transistor (TFT) array (Array) manufacturing process, then carry out the manufacturing process of colored filter again, just so-called color filter sheet integrated thin-film transistor array base-plate (COA:Color Filter On Array) technology.Utilize the COA technology, can promote the aperture opening ratio of TFT, main function is effectively to promote the brightness of panel.Past TFT face glass and colorized optical filtering sheet glass are in applying, when irritating liquid crystal, the contraposition of two sheet glass must be very accurate, the centre will stay the even space of 3-4 μ m to hold liquid crystal, therefore in the middle manufacturing process of this (Cell), it is the minimum part of yield rate in the whole front panel manufacturing process, if it is can save the loss of this section, very big for the help that whole yield rate promotes and cost reduces.
Ask for an interview Fig. 1 and Fig. 2.Fig. 1 is the sectional view of general conventional thin film transistor LCD (TFT-LCD).Thin-film transistor display panel glass 11 is fitted with colored filter (Color Filter) glass 12.A plurality of thin film transistor (TFT)s 111 (TFT:Thin-FilmTransistor) are arranged on the thin-film transistor display panel glass 11; all corresponding pixel electrode 112 on each thin film transistor (TFT) 111, between thin film transistor (TFT) 111 and pixel electrode 112 then is a transparent protection insulation course 113.The colored filter 121 of a plurality of red (R), green (G), blue (B) is then arranged on another sheet colored filter (Color Filter) glass 12, and each colored filter all separates with light shield layer 122 (BM), to prevent leakage of light.One transparent common electrode 123 is then arranged on colored filter 121.What be clipped in thin-film transistor display panel glass 11 and colored filter (Color Filter) glass 12 centres then is liquid crystal layer 13.
Fig. 2 illustrated is the sectional view of the Thin Film Transistor-LCD (TFT-LCD) that utilizes the COA technology made.Subsurface glass sheet 21 fits with upper strata face glass 22.A plurality of thin film transistor (TFT)s 211 (TFT:Thin-Film Transistor) are arranged on the subsurface glass sheet 21, all corresponding pixel electrode 212 on each thin film transistor (TFT) 211, between thin film transistor (TFT) 211 and pixel electrode 212 then is the colored filter 213 of a plurality of red (R), green (G), blue (B), each colored filter all separates with light shield layer 214 (BM), to prevent leakage of light.One transparent common electrode 221 is then arranged on the face glass of upper strata.What be clipped in subsurface glass sheet 21 and upper strata face glass 22 centres then is liquid crystal layer 23.
The structure of utilizing the made Thin Film Transistor-LCD device of COA technology at present as shown in Figure 3.Effectively viewing area 31 (Active Area) is outer one deck light shield layer zone 32, and 32 in light shield layer zone is adjacent with lead collection region 33, and lead collection region 33 engages (OLB:Outer Lead Bonding) regional 34 again with outer pin adjacent.This moment, effectively viewing area 31, lead collection region 33 and outer pin engaging zones 34 were electrical connection; but plain conductor is except that effective viewing area 31 has the protective seam protection; all unprotect layer protections of pin engaging zones 34 outside lead collection region 33 reaches; cause aqueous vapor to invade easily, and then cause the problem on the production reliability.
Summary of the invention
In above-mentioned background of invention; the existing made Thin Film Transistor-LCD device of COA technology that utilizes; its plain conductor is all unprotect layer protections of pin engaging zones outside the lead collection region reaches, and cause aqueous vapor to invade easily, cause the problem on the production reliability.So the invention provides a kind of new liquid crystal indicator, avoid said circumstances to produce.
One object of the present invention is to provide a kind of liquid crystal indicator.When forming, the plain conductor with the lead collection region covers in the lump by light shield layer or colored filter, exposes to prevent plain conductor, promotes the fiduciary level of product.
Another purpose of the present invention is to provide a kind of liquid crystal indicator.When forming, will not comprise in the outer pin engaging zones that many zones of drawing pin outward cover by light shield layer or colored filter in the lump,, promote the fiduciary level of product to increase outer insulation characterisitic of drawing between pin.
A further object of the present invention is to provide a kind of liquid crystal indicator.By light shield layer or colored filter when forming, to not comprise that many zones of drawing pin outward cover in the plain conductor of lead collection region and the outer pin engaging zones in the lump, to prevent that plain conductor from exposing and increase outer insulation characterisitic of drawing between pin, promotes the fiduciary level of product.
According to above-described purpose, the invention provides a kind of LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate (COA) technology, comprising: an effective viewing area; One lightproof area, adjacent with this effective viewing area; One lead collection region, adjacent with this lightproof area, have many plain conductors and form and be electrically connected with this effective viewing area; One outer pin engaging zones, adjacent with this lead collection region, have many and draw pin outward and form and be electrically connected with this lead collection region; And a protective seam, be formed at this lightproof area and this lead collection region, wherein in this lightproof area in order to preventing leakage of light, and expose in order to prevent this plain conductor in this lead collection region.
According to above-mentioned conception, wherein this protective seam is a resin bed.
According to above-mentioned conception, wherein this resin bed is the nonconductor layer of an anti-aqueous vapor.
According to above-mentioned conception, wherein this resin bed is the resinous material of a carbon containing.
According to above-mentioned conception, wherein this resin bed also is formed at this outer pin engaging zones simultaneously, in order to increase the insulation characterisitic between this outer pin.
According to above-mentioned conception, wherein the thickness of this resin bed is less than this outer height that draws pin.
According to above-mentioned conception, wherein the thickness of this resin bed is approximately between 0.5 μ m～3 μ m.
According to above-mentioned conception, wherein the material of this plain conductor is to select from following: molybdenum, aluminium and aforesaid combination.
According to above-mentioned conception, wherein this plain conductor skin also comprises the plated film that utilizes sputter (sputter) mode, and in order to prevent burning, its material is to select from following: indium tin oxide (ITO), indium-zinc oxide (IZO) and aforesaid combination.
According to above-described purpose, the invention provides a kind of LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate (COA) technology, comprising: an effective viewing area; One lightproof area, adjacent with this effective viewing area; One lead collection region, adjacent with this lightproof area, have many plain conductors and form and be electrically connected with this effective viewing area; One outer pin engaging zones, adjacent with this lead collection region, have many and draw pin outward and form and be electrically connected with this lead collection region; And a color filter layers, be formed at this effective viewing area and this lead collection region, wherein expose in order to prevent this plain conductor in this lead collection region.
According to above-mentioned conception, wherein this colored filter layer material that forms in this lead collection region is to select from following: red color filter layers, blue color filter layers, green color filter layers and aforementioned three kinds combination in any.
According to above-mentioned conception, wherein this color filter layers also is formed at this outer pin engaging zones simultaneously, in order to increase this outer insulation characterisitic of drawing between pin.
According to above-mentioned conception, wherein this colored filter layer material that forms in this lead collection region is selected from following: red color filter layers, blue color filter layers, green color filter layers and aforementioned three kinds combination in any.
According to above-mentioned conception, wherein the thickness of this colored filter is less than this outer height that draws pin.
According to above-mentioned conception, wherein the thickness of this colored filter is approximately between 0.5 μ m～3 μ m.
According to above-mentioned conception, wherein the material of this particoloured wire is to select from following: molybdenum, aluminium and aforesaid combination.
According to above-mentioned conception, wherein this plain conductor skin also comprises the plated film that utilizes sputter (sputter) mode, and in order to prevent burning, its material is to select from following: indium tin oxide (ITO), indium-zinc oxide (IZO) and aforesaid combination.
According to above-described purpose, the invention provides a kind of LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate (COA) technology, comprising: an effective viewing area; One lightproof area, adjacent with this effective viewing area; One lead collection region, adjacent with this lightproof area, have many plain conductors and form and be electrically connected with this effective viewing area; One outer pin engaging zones, adjacent with this lead collection region, have many and draw pin outward and form and be electrically connected with this lead collection region; And a protective seam, be formed at this lightproof area with should outer pin engaging zones, wherein in this lightproof area in order to preventing leakage of light, and outside this pin engaging zones in order to increase the insulation characterisitic of drawing outside this between pin.
According to above-mentioned conception, wherein this protective seam is a resin bed.
According to above-mentioned conception, wherein this resin bed is the resinous material of a carbon containing.
According to above-mentioned conception, wherein the thickness of this resin bed is less than this outer height that draws pin.
According to above-mentioned conception, wherein the thickness of this resin bed is approximately between 0.5 μ m～3 μ m.
According to above-described purpose, the invention provides a kind of LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate (COA) technology, comprising: an effective viewing area; One lightproof area, adjacent with this effective viewing area; One lead collection region, adjacent with this lightproof area, have many plain conductors and form and be electrically connected with this effective viewing area; One outer pin engaging zones, adjacent with this lead collection region, have many and draw pin outward and form and be electrically connected with this lead collection region; And a color filter layers, be formed at this effective viewing area with should outer pin engaging zones, wherein outside this pin engaging zones in order to increase the insulation characterisitic between pin outside this.
According to above-mentioned conception, wherein this colored filter layer material that the pin engaging zones forms outside this is to select from following: red color filter layers, blue color filter layers, green color filter layers and aforementioned three kinds combination in any.
According to above-mentioned conception, wherein the thickness of this color filter layers is less than this outer height that draws pin.
According to above-mentioned conception, wherein the thickness of this color filter layers is approximately between 0.5 μ m～3 μ m.
Description of drawings
What Fig. 1 illustrated is the sectional view of general conventional thin film transistor LCD;
What Fig. 2 illustrated is the existing sectional view that utilizes the made Thin Film Transistor-LCD of COA technology;
What Fig. 3 illustrated is the existing structure of utilizing the made Thin Film Transistor-LCD device of COA technology;
What Fig. 4 A illustrated is the structure of the Thin Film Transistor-LCD device of first and second embodiment of the present invention;
What Fig. 4 B illustrated is the sectional view of first embodiment of the invention lead collection region;
What Fig. 4 C illustrated is the sectional view of second embodiment of the invention lead collection region;
What Fig. 5 A illustrated is the structure of the Thin Film Transistor-LCD device of the present invention the 3rd and the 4th embodiment;
What Fig. 5 B illustrated is the sectional view of third embodiment of the invention pin engaging zones;
What Fig. 5 C illustrated is the sectional view of fourth embodiment of the invention pin engaging zones;
What Fig. 6 A illustrated is the structure of the Thin Film Transistor-LCD device of the present invention the 5th and the 6th embodiment;
What Fig. 6 B illustrated is the sectional view of fifth embodiment of the invention lead collection region and outer pin engaging zones; And
What Fig. 6 C illustrated is the sectional view of sixth embodiment of the invention lead collection region and outer pin engaging zones.
The simple symbol explanation
11: thin-film transistor display panel glass
12: the colorized optical filtering sheet glass
13,23: liquid crystal layer
111,211: thin film transistor (TFT)
112,212: pixel electrode
113: the protection insulation course
121,213: colored filter
122,214: filter layer
123,221: common electrode
21: the subsurface glass sheet
22: the upper strata face glass
31,41,51,61: effective viewing area
32: light shield layer
33,411,511,611: the lead collection region
34,412,512,612: outer pin engaging zones
42,52,62: glass substrate
43,53,63: plain conductor
44,54,64:ITO or IZO
45,55,65: light shield layer
46,56,66: color filter layers
58,68: draw pin outward
Embodiment
Some embodiments of the present invention can be described in detail as follows.Yet except describing in detail, the present invention can also be widely implements at other embodiment, and scope of the present invention do not limited, its with after claim be as the criterion.
First embodiment of the present invention asks for an interview the sectional view of structure and Fig. 4 B lead collection region of Fig. 4 A Thin Film Transistor-LCD device, and Fig. 4 B is along the sectional view of XX ' direction among Fig. 4 A.The manufacturing process of on a transparent glass substrate 42, finish a series of thin film transistor (TFT) manufacturing process at first earlier, external plain conductor drawing pin outside reaching, to form a plurality of plain conductors 43 projectioies shown in Fig. 4 B after manufacturing process is finished, this moment, effectively viewing area, lead collection region and outer pin engaging zones were electrical connection.The general employed material of plain conductor is molybdenum (Mo), aluminium (Al) or both are folded mutually forms, common metal lead periphery all also can utilize the method for sputter (sputter) that indium tin oxide (ITO) or indium-zinc oxide (IZO) 44 are plated, and purpose is for preventing burning.After finishing above manufacturing process, promptly begin the manufacturing process of colored filter.Form a light shield layer at first earlier on effective viewing area 41 and lead collection region 411.The method that forms be earlier with the resinous material rotary coating of a carbon containing on substrate, again through photolithographic exposure, development, baking, zone beyond the shading region in effective viewing area 41 and the light shield layer on the outer pin engaging zones 412 are removed, so promptly form the light shield layer 45 on Fig. 4 B.Cover by the plain conductor of light shield layer, expose, promote the fiduciary level of product to prevent plain conductor with the lead collection region.
The second embodiment of the present invention is asked for an interview the sectional view of structure and Fig. 4 C lead collection region of Fig. 4 A Thin Film Transistor-LCD device, and Fig. 4 C is along the sectional view of XX ' direction among Fig. 4 A.The manufacturing process of on a transparent glass substrate 42, finish a series of thin film transistor (TFT) manufacturing process at first earlier, external plain conductor drawing pin outside reaching, to form a plurality of plain conductors 43 projectioies shown in Fig. 4 C after manufacturing process is finished, this moment, effectively viewing area, lead collection region and outer pin engaging zones were electrical connection.The general employed material of plain conductor is molybdenum (Mo), aluminium (Al) or both are folded mutually forms, common metal lead periphery all also can utilize the method for sputter (sputter) that indium tin oxide (ITO) or indium-zinc oxide (IZO) 44 are plated, and purpose is for preventing burning.After finishing above manufacturing process, promptly begin the manufacturing process of colored filter.Form a light shield layer at first earlier on effective viewing area 41.The method that forms be earlier with the resinous material rotary coating of a carbon containing on substrate, again through photolithographic exposure, development, baking, light shield layer on zone beyond the shading region in effective viewing area 41, lead collection region 411 and the outer pin engaging zones 412 is removed, promptly begun the making of colored filter after light shield layer is finished.At present main commercialization manufacturing process is organic pigment dispersion method (PigmentDispersion), utilizes manufacturing process such as the coating on substrate of reactive group aggretion type (Radical Polymerization) photoresist, photolithographic exposure, development and baking that organic pigment disperses are carried out for three times back and forth and to be formed the color filter patterns of three kinds of different colours of red, green, blue (R, G, B) respectively.Organic pigment has Anthraquinone system aspect R, the Phthalocyanine series pigments is then being arranged aspect G, the B.Wherein, colored filter in effectively viewing area 41 and 411 formation of lead collection region will be retained, wherein be positioned at the colored filter of lead collection region 411, promptly form the color filter layers 46 on Fig. 4 C, the reservation mode can be the colored filter of red, green, blue solid color, or the colored filter that builds up of both or three wherein, to look closely its fire resistance characteristic and what person of electrical characteristics preferred and decide when color filter layers 46 to select aforementioned what person for use.In addition, the colored filter of outer pin engaging zones 412 will be removed in process for making.
The 3rd embodiment of the present invention asks for an interview the sectional view of the structure of Fig. 5 A Thin Film Transistor-LCD device and the outer pin engaging zones of Fig. 5 B, and Fig. 5 B is along the sectional view of YY ' direction among Fig. 5 A.The manufacturing process of on a transparent glass substrate 52, finish a series of thin film transistor (TFT) manufacturing process at first earlier, external plain conductor drawing pin outside reaching, to form a plurality of outer pin 58 projectioies of drawing shown in Fig. 5 B after manufacturing process is finished, this moment, effectively viewing area, lead collection region and outer pin engaging zones were electrical connection.After finishing above manufacturing process, promptly begin the manufacturing process of colored filter.Form at first earlier a light shield layer in effective viewing area 51 and outside on the pin engaging zones 512, the method that forms be earlier with the resinous material rotary coating of a carbon containing on substrate, again through photolithographic exposure, development, baking, zone beyond the shading region in effective viewing area 51 and the light shield layer on the lead collection region 511 are removed, so promptly form the light shield layer 55 on Fig. 5 B.The height of light shield layer 55 is less than outer pin and connects 58 height, just is unlikely to take place electrical disconnected problem as drawing pin 58 in addition when being connected with flexible printed wiring board (FPC:Flexible Printed CircuitBoard).The height of general light shield layer 55 is approximately between 0.5 μ m～3 μ m.
The 4th embodiment of the present invention asks for an interview the sectional view of the structure of Fig. 5 A Thin Film Transistor-LCD device and the outer pin engaging zones of Fig. 5 C, and Fig. 5 C is along the sectional view of YY ' direction among Fig. 5 A.The manufacturing process of on a transparent glass substrate 52, finish a series of thin film transistor (TFT) manufacturing process at first earlier, external plain conductor drawing pin outside reaching, to form a plurality of outer pin 58 projectioies of drawing shown in Fig. 5 C after manufacturing process is finished, this moment, effectively viewing area, lead collection region and outer pin engaging zones were electrical connection.After finishing above manufacturing process, promptly begin the manufacturing process of colored filter.Form a light shield layer at first earlier on effective viewing area 51, the method that forms be earlier with the resinous material rotary coating of a carbon containing on substrate, again through photolithographic exposure, development, baking, light shield layer on zone beyond the shading region in effective viewing area 51, lead collection region 511 and the outer pin engaging zones 512 is removed, promptly begun the making of colored filter after light shield layer is finished.At present main commercialization manufacturing process is organic pigment dispersion method (Pigment Dispersion), utilizes manufacturing process such as the coating on substrate of reactive group aggretion type (Radical Polymerization) photoresist, photolithographic exposure, development and baking that organic pigment disperses are carried out for three times back and forth and to be formed the color filter patterns of three kinds of different colours of red, green, blue (R, G, B) respectively.Organic pigment has Anthraquinone system aspect R, the Phthalocyanine series pigments is then being arranged aspect G, the B.Wherein, the colored filter that pin engaging zones 512 forms outside effectively viewing area 51 reaches will be retained, wherein be positioned at the colored filter of outer pin engaging zones 512, promptly form the color filter layers 56 on Fig. 5 C, the reservation mode can be the colored filter of red, green, blue solid color, or the colored filter that builds up of both or three wherein, to look closely its fire resistance characteristic and what person of electrical characteristics preferred and decide when color filter layers 56 to select aforementioned what person for use.In addition, the colored filter of lead collection region 511 will be removed in process for making.The height of color filter layers 56 is less than the outer height that draws pin 58, just is unlikely to take place electrical disconnected problem as drawing pin 58 in addition when being connected with flexible printed wiring board (FPC:Flexible Printed Circuit Board).The height of general color filter layers 56 is approximately between 0.5 μ m～3 μ m.
The 5th embodiment of the present invention asks for an interview the structure of Fig. 6 A Thin Film Transistor-LCD device and the sectional view of Fig. 6 B lead collection region and outer pin engaging zones, and Fig. 6 B is the sectional view that reaches YY ' direction among Fig. 6 A along XX '.The manufacturing process of on a transparent glass substrate 62, finish a series of thin film transistor (TFT) manufacturing process at first earlier, external plain conductor drawing pin outside reaching, to form a plurality of plain conductors 63 and outer pin 68 projectioies shown in Fig. 6 B after manufacturing process is finished, this moment, effectively viewing area, lead collection region and outer pin engaging zones were electrical connection.The general employed material of plain conductor is molybdenum (Mo), aluminium (Al) or both are folded mutually forms, common metal lead periphery all also can utilize the method for sputter (sputter) that indium tin oxide (ITO) or indium-zinc oxide (IZO) 64 are plated, and purpose is for preventing burning.After finishing above manufacturing process, promptly begin the manufacturing process of colored filter.Form at first earlier a light shield layer in effective viewing area 61, lead collection region 611 and outside on the pin engaging zones 612, the method that forms be earlier with the resinous material rotary coating of a carbon containing on substrate, again through photolithographic exposure, development, baking, the light shield layer in the zone beyond the shading region in effective viewing area 61 is removed, so promptly formed the light shield layer 65 on Fig. 6 B.The height of light shield layer 65 is greater than the height that plain conductor 63 adds indium tin oxide (ITO) or indium-zinc oxide (IZO) 64, but less than the height that draws pin 68 outward, just be unlikely to take place electrical disconnected problem as drawing pin 68 in addition when being connected with flexible printed wiring board (FPC:Flexible Printed Circuit Board), and plain conductor 63 is also because of there being the covering of light shield layer 65, prevent that plain conductor from exposing, and then promote the fiduciary level of product.
The 6th embodiment of the present invention asks for an interview the structure of Fig. 6 A Thin Film Transistor-LCD device and the sectional view of Fig. 6 C lead collection region and outer pin engaging zones, and Fig. 6 C is the sectional view that reaches YY ' direction among Fig. 6 A along XX '.The manufacturing process of on a transparent glass substrate 62, finish a series of thin film transistor (TFT) manufacturing process at first earlier, external plain conductor drawing pin outside reaching, to form a plurality of plain conductors 63 and outer pin 68 projectioies shown in Fig. 6 C after manufacturing process is finished, this moment, effectively viewing area, lead collection region and outer pin engaging zones were electrical connection.The general employed material of plain conductor is molybdenum (Mo), aluminium (Al) or both are folded mutually forms, common metal lead periphery all also can utilize the method for sputter (sputter) that indium tin oxide (ITO) or indium-zinc oxide (IZO) 64 are plated, and purpose is for preventing burning.After finishing above manufacturing process, promptly begin the manufacturing process of colored filter.Form a light shield layer at first earlier on effective viewing area 61, the method that forms be earlier with the resinous material rotary coating of a carbon containing on substrate, again through photolithographic exposure, development, baking, light shield layer on zone beyond the shading region in effective viewing area 61, lead collection region 611 and the outer pin engaging zones 612 is removed, promptly begun the making of colored filter after light shield layer is finished.At present main commercialization manufacturing process is organic pigment dispersion method (Pigment Dispersion), utilizes manufacturing process such as the coating on substrate of reactive group aggretion type (Radical Polymerization) photoresist, photolithographic exposure, development and baking that organic pigment disperses are carried out for three times back and forth and to be formed the color filter patterns of three kinds of different colours of red, green, blue (R, G, B) respectively.Organic pigment has Anthraquinone system aspect R, the Phthalocyanine series pigments is then being arranged aspect G, the B.Wherein, the colored filter that pin engaging zones 612 forms outside lead collection region 611 reaches will be retained, promptly form the color filter layers 66 on Fig. 6 C, the reservation mode can be the colored filter of red, green, blue solid color, or the colored filter that builds up of both or three wherein, to look closely its fire resistance characteristic and what person of electrical characteristics preferred and decide when color filter layers 66 to select aforementioned what person for use.In addition, the height of color filter layers 66 is greater than the height that plain conductor 63 adds indium tin oxide (ITO) or indium-zinc oxide (IZO) 64, but less than the height that draws pin 68 outward, just be unlikely to take place electrical disconnected problem as drawing pin 68 in addition when being connected with flexible printed wiring board (FPC:Flexible Printed Circuit Board), and plain conductor 63 is also because of the covering of chromatic colour filter layer 66, so can prevent aqueous vapor, and then promote the fiduciary level of product.
Even the present invention describes by enumerating several preferred embodiments, but the present invention is not limited to the embodiment that enumerated.Though the specific embodiment of before enumerating and narrating, apparently, other does not break away under the disclosed spirit, and the equivalence of being finished changes or modifies, and all should be included in the claim of the present invention.In addition, all other do not break away under the disclosed spirit, and other that finished are similar and approximate to be changed or modification, also includes in claim of the present invention.Should explain scope of the present invention with the widest definition simultaneously, use and comprise all modifications and similar structures.
Claims (10)
1. LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate technology comprises:
One effective viewing area;
One lightproof area, adjacent with this effective viewing area;
One lead collection region, adjacent with this lightproof area, have many plain conductors and form and be electrically connected with this effective viewing area;
One outer pin engaging zones, adjacent with this lead collection region, have many and draw pin outward and form and be electrically connected with this lead collection region; And
One protective seam is formed at this lightproof area and this lead collection region, wherein in this lightproof area in order to preventing leakage of light, and expose in order to prevent this plain conductor in this lead collection region.
2. LCD device as claimed in claim 1, wherein this protective seam is a resin bed; Wherein, and this resin bed be the nonconductor layer of an anti-aqueous vapor.
3. LCD device as claimed in claim 2, wherein this resin bed also is formed at this outer pin engaging zones simultaneously, in order to increase this outer insulation characterisitic of drawing between pin; Wherein the thickness of this resin bed is between 0.5 μ m～3 μ m, and less than this outer height that draws pin.
4. LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate technology comprises:
One effective viewing area;
One lightproof area, adjacent with this effective viewing area;
One lead collection region, adjacent with this lightproof area, have many plain conductors and form and be electrically connected with this effective viewing area;
One outer pin engaging zones, adjacent with this lead collection region, have many and draw pin outward and form and be electrically connected with this lead collection region; And
One color filter layers is formed at this effective viewing area and this lead collection region, wherein exposes in order to prevent this plain conductor in this lead collection region.
5. LCD device as claimed in claim 4, wherein this color filter layers also is formed at this outer pin engaging zones simultaneously, in order to increase this outer insulation characterisitic of drawing between pin.
6. LCD device as claimed in claim 5, wherein formed this colored filter layer material of pin engaging zones or this lead collection region is to select from following respectively outside this: red color filter layers, blue color filter layers, green color filter layers and aforementioned three kinds combination in any; Wherein the thickness of this color filter layers is between 0.5 μ m～3 μ m, and less than this outer height that draws pin.
7. LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate technology comprises:
One effective viewing area;
One lightproof area, adjacent with this effective viewing area;
One lead collection region, adjacent with this lightproof area, have many plain conductors and form and be electrically connected with this effective viewing area;
One outer pin engaging zones, adjacent with this lead collection region, have many and draw pin outward and form and be electrically connected with this lead collection region; And
One protective seam, be formed at this lightproof area with should outer pin engaging zones, wherein in this lightproof area in order to preventing leakage of light, and outside this pin engaging zones in order to increase the insulation characterisitic of drawing outside this between pin.
8. LCD device as claimed in claim 7, wherein this protective seam is a resin bed, the thickness of this resin bed is between 0.5 μ m～3 μ m, and less than this outer height that draws pin; Wherein, and this resin bed be the nonconductor layer of an anti-aqueous vapor.
9. LCD device of utilizing color filter sheet integrated thin-film transistor array base-plate technology comprises:
One effective viewing area;
One lightproof area, adjacent with this effective viewing area;
One lead collection region, adjacent with this lightproof area, have many plain conductors and form and be electrically connected with this effective viewing area;
One outer pin engaging zones, adjacent with this lead collection region, have many and draw pin outward and form and be electrically connected with this lead collection region; And
One color filter layers, be formed at this effective viewing area with should outer pin engaging zones, wherein outside this pin engaging zones in order to increase the insulation characterisitic of drawing outside this between pin.
10. LCD device as claimed in claim 9, wherein this colored filter layer material that the pin engaging zones forms outside this is to select from following: red color filter layers, blue color filter layers, green color filter layers and aforementioned three kinds combination in any, wherein the thickness of this color filter layers is between 0.5 μ m～3 μ m, and less than this outer height that draws pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100346523A CN100357816C (en) | 2004-04-19 | 2004-04-19 | Liquid crystal display unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100346523A CN100357816C (en) | 2004-04-19 | 2004-04-19 | Liquid crystal display unit |
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| CN1690817A CN1690817A (en) | 2005-11-02 |
| CN100357816C true CN100357816C (en) | 2007-12-26 |
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| CNB2004100346523A Expired - Lifetime CN100357816C (en) | 2004-04-19 | 2004-04-19 | Liquid crystal display unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100421019C (en) * | 2006-12-06 | 2008-09-24 | 友达光电股份有限公司 | Method for producing liquid crystal display device substrate |
| CN101452124B (en) * | 2007-11-28 | 2012-10-10 | 奇美电子股份有限公司 | Display panel with protection structure and image display system applying the display panel |
| CN101539678B (en) * | 2008-03-17 | 2011-03-16 | 中华映管股份有限公司 | Liquid crystal display panel and manufacturing method thereof |
| CN101706635B (en) * | 2009-11-02 | 2020-04-14 | 友达光电股份有限公司 | Pixel array, polymer stable alignment liquid crystal display panel and photoelectric device |
| CN102722056A (en) * | 2011-03-29 | 2012-10-10 | 京东方科技集团股份有限公司 | A color light-filtering array base plate, a manufacture method thereof, and a liquid-crystal display panel |
Citations (4)
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|---|---|---|---|---|
| US5648858A (en) * | 1992-07-22 | 1997-07-15 | Hitachi, Ltd. | Liquid crystal display which suppresses interference fringes |
| US20010048490A1 (en) * | 2000-05-25 | 2001-12-06 | Lim Byoung Ho | Liquid crystal display device and method for manufacturing the same |
| CN1410804A (en) * | 2001-10-04 | 2003-04-16 | 精工爱普生株式会社 | Electrooptics device, mfg. method and electronic apparatus thereof |
| US20030137621A1 (en) * | 2001-12-28 | 2003-07-24 | Fujitsu Display Technologies Corporation | Liquid crystal display device and method of manufacturing the same |
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2004
- 2004-04-19 CN CNB2004100346523A patent/CN100357816C/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5648858A (en) * | 1992-07-22 | 1997-07-15 | Hitachi, Ltd. | Liquid crystal display which suppresses interference fringes |
| US20010048490A1 (en) * | 2000-05-25 | 2001-12-06 | Lim Byoung Ho | Liquid crystal display device and method for manufacturing the same |
| CN1410804A (en) * | 2001-10-04 | 2003-04-16 | 精工爱普生株式会社 | Electrooptics device, mfg. method and electronic apparatus thereof |
| US20030137621A1 (en) * | 2001-12-28 | 2003-07-24 | Fujitsu Display Technologies Corporation | Liquid crystal display device and method of manufacturing the same |
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