CN100356261C - Liquid crystal display - Google Patents
Liquid crystal display Download PDFInfo
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- CN100356261C CN100356261C CNB2004100772272A CN200410077227A CN100356261C CN 100356261 C CN100356261 C CN 100356261C CN B2004100772272 A CNB2004100772272 A CN B2004100772272A CN 200410077227 A CN200410077227 A CN 200410077227A CN 100356261 C CN100356261 C CN 100356261C
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- lcd
- molybdenum
- aluminium
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Abstract
The present invention discloses a liquid crystal display. A basal plate of the liquid crystal display comprises an insulating base, a common line positioned on the insulating base, a common electrode connected with the common line, and a pixel electrode and a dielectric layer positioned between the common line and the pixel electrode, wherein the common line is provided with a plurality of lugs which form a memory capacitor with the pixel electrode positioned above the lugs and the dielectric layer between the common line and the pixel electrode. In the liquid crystal display, the load and the power consumption of a drive circuit can not be increased when capacitance is stored.
Description
[technical field]
The present invention relates to a kind of LCD.
[background technology]
Adopt the LCD of active matrix array to generally comprise a plurality of pixel region and a plurality of thin film transistor (TFT) (Thin Film Transistor that are arranged on gate line and source electrode line infall that intersect to form mutually by gate line and source electrode line, TFT), wherein, each pixel has a pixel electrode, and this thin film transistor (TFT) is used to control the switch switching of this pixel electrode.
When a signal was loaded into thin film transistor (TFT), pixel region was activated, and signal of video signal is applied on this pixel electrode.For reaching high-quality display effect, be applied to voltage on the pixel electrode and must keep a certain normal value when next signal is received.Yet; usually can leak fast in order to the electric charge of keeping voltage on the pixel electrode; cause the voltage on the pixel electrode to reduce too early; thereby reduce the display effect of LCD, therefore each pixel of LCD uses a memory capacitance to keep the voltage of its pixel electrode to stablize constant in the given time usually.
March 29 calendar year 2001, disclosed TaiWan, China patent disclosed a kind of memory capacitance of prior art for No. 493101, as depicted in figs. 1 and 2.Fig. 1 is the pixel region planimetric map of an active-matrix substrate, and Fig. 2 is along the cut-open view of II-II line among Fig. 1.Wherein, this pixel region 1 comprises the data line 11 and the pixel electrode 13 of the gate line 12 of many horizontal expansions, many longitudinal extensions, and each pixel region 1 intersects to form with gate line 12 mutually by the data line 11 in a certain zone.
Wherein, gate line 12 is positioned at substrate 10 tops, and pixel region 1 comprises a plurality of storage electrodes 14, and these a plurality of storage electrodes 14 tops are coated with insulation course 17 and protective seam 18 successively, the part hollow out of corresponding stored electrode 14 on this protective seam 18 is exposed the insulation course 17 of counterpart; Pixel electrode 13 is positioned at insulation course 17 and protective seam 18 tops.A plurality of storage electrodes 14 are strip, are arranged in parallel successively, with insulation course 17 and the pixel electrode 13 common memory capacitance that form.
In this pixel region 1, a plurality of strip storage electrodes 14 are set on gate line 12, increase the total area of storage electrode 14, can increase the capacitance of memory capacitance, thereby can store more multi-charge, keep the voltage of pixel electrode constant in a long time, obtain high-quality display effect.But the load that a plurality of strip storage electrodes 14 can increase gate line 11 simultaneously is set on gate line 11.
[summary of the invention]
When increasing memory capacitance, can increase the defective of gate line load for overcoming the prior art LCD, the invention provides a kind of LCD that has memory capacitance and can not increase the gate line load.
The technical scheme that technical solution problem of the present invention is adopted is: a kind of LCD is provided, the one substrate comprises a dielectric base, at the concentric line on this dielectric base, a public electrode that is connected with this concentric line, the dielectric layer of a pixel electrode and between this concentric line and this pixel electrode, wherein have a plurality of projections on this concentric line, these a plurality of projections and the pixel electrode above it and the dielectric layer between the two form a memory capacitance.
Compared with prior art, in this pixel region, be positioned on the concentric line owing to form a plurality of projections of memory capacitance, these a plurality of projections and pixel electrode and the dielectric layer between the two form memory capacitance jointly.But concentric line only provides reference voltage to public electrode usually, and this LCD has memory capacitance, and its display quality is improved, and can not increase the load and the power consumption of driving circuit simultaneously.
[description of drawings]
Fig. 1 is a kind of pixel region planimetric map of prior art LCD.
Fig. 2 is along the cut-open view of II-II line among Fig. 1.
Fig. 3 is the pixel region planimetric map of LCD of the present invention.
Fig. 4 is along the cut-open view of IV-IV line among Fig. 3.
[embodiment]
One pixel region of LCD of the present invention as shown in Figure 3 and Figure 4, Fig. 3 is the planimetric map of a pixel region of liquid crystal display-display of the present invention, Fig. 4 is along the cut-open view of IV-IV line among Fig. 3.
See also Fig. 3, this pixel region 3 comprises that the data line 31, of gate line 32, a longitudinal extension of a horizontal expansion is positioned at concentric line (CommonLine) 36 and pixel electrode 33 that this gate line 32 and the thin film transistor (TFT) 35, of the point of crossing of this data line 31 are arranged essentially parallel to this gate line 32, and adjacent two data lines 31 and two gate lines 32 intersect to form pixel region 3 mutually.
Wherein, this thin film transistor (TFT) 35 comprises grid 350, drain electrode 351 and source electrode 352.Gate line 32 is electrically connected with grid 350 and provides control signal to it, and data line 31 is electrically connected with the drain electrode 351 of thin film transistor (TFT) 35 and provide picture element signal to pixel electrode 33 by it, concentric line 36 is positioned at pixel region 3, provides one to drive the reference voltage of liquid crystal layer to the public electrode (Common Electrode) 360 that is connected with this concentric line 36; This public electrode 360 is overlapped with this pixel electrode 33, and the lap 330 of pixel electrode 33 and concentric line 36 is as the last storage electrode of memory capacitance 50.Wherein this concentric line 36 is provided with a plurality of projections that are separated from each other 34, and these a plurality of projections 34 are as the following storage electrode of this memory capacitance 50, respectively and lap 330 and the dielectric layer between the two (figure does not show) constitute a plurality of sub-memory capacitance jointly.These a plurality of sub-memory capacitance formation in parallel memory capacitance 50.
Please consult Fig. 4 together, grid 350, public electrode 360 and concentric line 36 all are arranged on the dielectric base 30, and wherein grid 350 is provided with at interval with public electrode 360, concentric line 36, and public electrode 360 is connected with concentric line 36; Its top is coated with gate insulating film 37, directly over grid 350 and concentric line 36, be disposed with active layers 39 and ohm articulamentum 41, on dielectric base 30, form a conductor layer with said modules, this conductor layer is after etch processes, the conductor layer of public electrode 360 tops is removed, thereby forms drain electrode 351, source electrode 352 and the pixel electrode 33 of thin film transistor (TFT) 35.Above drain electrode 351, source electrode 352, pixel electrode 33 and gate insulating film 37, a passivating film 38 is set.Wherein pixel electrode 33 is electrically connected with drain electrode 351, pixel electrode 33 is overlapped with concentric line 36, a plurality of projections 34 common memory capacitance 50 that form on pixel electrode 33 and gate insulating film 37 and the concentric line 36, wherein the overlapping part 330 of this pixel electrode 33 and concentric line 36 is as the last storage electrode of this memory capacitance 50, and gate insulating film 37 is used as the dielectric layer of this memory capacitance 50.
Compared with prior art, in this pixel region 3, be positioned on the concentric line 36 these a plurality of projections 34 and pixel electrode 33 and the gate insulating film 37 common memory capacitance 50 that form owing to form a plurality of storage electrodes (being a plurality of projections) 34 down of memory capacitance 50.But concentric line 36 only provides reference voltage to public electrode usually, adopts the LCD of this design, has memory capacitance 50, does not increase the load of gate line 32 simultaneously, thereby does not increase the load and the power consumption of driving circuit.
Wherein, these a plurality of projections 34 can be the rectangle projections, and promptly the strip projection also can be trapezoidal projection or triangular bump.On the lap 330 of pixel electrode 33 and concentric line 36 and these a plurality of projections 34, a plurality of holes can also be set, utilize the edge effect of these a plurality of holes further to increase the capacitance of memory capacitance 50.
This concentric line 36, grid 350 and public electrode 360 can be single layer structure, double-decker or three-decker.If this concentric line 36, grid 350 and public electrode 360 are single layer structure, can adopt conductive materials such as aluminium, chromium, Nb-Al alloy, molybdenum and tungsten alloy or molybdenum niobium alloy to make; If this concentric line 36, grid 350 and public electrode 360 are double-decker, its double-deck material can adopt following combination of materials: molybdenum/neodymium aluminium alloy or neodymium aluminium alloy/chromium; If this concentric line 36, grid 350 and public electrode 360 are three-decker, its material of three layers can adopt following combination of materials: titanium/aluminium/titanium or molybdenum/aluminium/molybdenum.In addition, aluminium can replace above-mentioned aluminium alloy, as neodymium aluminium alloy, Nb-Al alloy etc.
In addition, this pixel electrode 33 can adopt tin indium oxide (Indium Tin Oxide, ITO) or indium zinc oxide (Indium Zinc Oxide, IZO) etc. transparent conductive material is made, and can adopt silicon nitride, monox, phenylpropyl alcohol cyclobutane (Benzocyclobutene) or acryl dielectric materials such as (Acryl) to make as the gate insulating film 37 of dielectric layer.
Claims (25)
1. LCD, the one substrate comprises a dielectric base, at the concentric line on this dielectric base, a public electrode that is connected with this concentric line, the dielectric layer of a pixel electrode and between this concentric line and this pixel electrode, it is characterized in that: have a plurality of projections on this concentric line, these a plurality of projections and the pixel electrode above it and the dielectric layer between the two form a memory capacitance, and the pixel electrode part that this projection is provided with a plurality of holes or this projection top is provided with a plurality of holes.
2. LCD as claimed in claim 1 is characterized in that: this projection is at least a in following three kinds of projections: rectangle projection, trapezoidal projection and triangular bump.
3. LCD as claimed in claim 1 is characterized in that: this concentric line is a single layer structure, and its material is at least a in the group that forms of following material: aluminium, chromium, Nb-Al alloy, molybdenum and tungsten alloy and molybdenum niobium alloy.
4. LCD as claimed in claim 1 is characterized in that: this concentric line is a double-decker, and this double-deck material is one of following combination of materials: molybdenum/neodymium aluminium alloy and neodymium aluminium alloy/chromium.
5. LCD as claimed in claim 1 is characterized in that: this concentric line is a three-decker, and the material of this three-decker is one of following combination of materials: titanium/aluminium/titanium and molybdenum/aluminium/molybdenum.
6. LCD as claimed in claim 1 is characterized in that: this public electrode is a single layer structure, and its material is selected from the group that following material forms at least a: aluminium, chromium, Nb-Al alloy, molybdenum and tungsten alloy and molybdenum niobium alloy.
7. LCD as claimed in claim 1 is characterized in that: this public electrode is a double-decker, and this double-deck material is one of following combination of materials: molybdenum/neodymium aluminium alloy and neodymium aluminium alloy/chromium.
8. LCD as claimed in claim 1 is characterized in that: this public electrode is a three-decker, and the material of this three-decker is one of following combination of materials: titanium/aluminium/titanium and molybdenum/aluminium/molybdenum.
9. LCD as claimed in claim 1 is characterized in that: this dielectric layer is to be selected from least a in the group that following material forms: silicon nitride, monox, phenylpropyl alcohol cyclobutane and acryl material.
10. LCD as claimed in claim 1 is characterized in that: this pixel electrode adopts transparent conductive material to make.
11. LCD as claimed in claim 10 is characterized in that: this transparent conductive material is indium zinc oxide or tin indium oxide.
12. a LCD, its thin film transistor base plate comprises:
One dielectric base,
One gate line,
One is arranged essentially parallel to the concentric line of this gate line,
One data line, itself and this gate line and concentric line intersect to form a pixel region mutually;
One is positioned at the thin film transistor (TFT) of gate line and data line point of crossing;
One public electrode that is positioned at pixel region and is connected with this concentric line;
One pixel electrode that is connected with this thin film transistor (TFT);
One dielectric layer between this concentric line and this pixel electrode;
It is characterized in that: have a plurality of projections on this concentric line, these a plurality of projections and the pixel electrode above it and the dielectric layer between the two form a memory capacitance, and the pixel electrode part that this projection is provided with a plurality of holes or this projection top is provided with a plurality of holes.
13. LCD as claimed in claim 12 is characterized in that: this projection is at least a in following three kinds of projections: rectangle projection, trapezoidal projection and triangular bump.
14. LCD as claimed in claim 12 is characterized in that: this concentric line is a single layer structure, and its material is at least a in the group that forms of following material: aluminium, chromium, Nb-Al alloy, molybdenum and tungsten alloy and molybdenum niobium alloy.
15. LCD as claimed in claim 12 is characterized in that: this concentric line is a double-decker, and this double-deck material is one of following combination of materials: molybdenum/neodymium aluminium alloy and neodymium aluminium alloy/chromium.
16. LCD as claimed in claim 12 is characterized in that: this concentric line is a three-decker, and the material of this three-decker is one of following combination of materials: titanium/aluminium/titanium and molybdenum/aluminium/molybdenum.
17. LCD as claimed in claim 12 is characterized in that: this gate line is a single layer structure, and its material is at least a in the group that forms of following material: aluminium, chromium, Nb-Al alloy, molybdenum and tungsten alloy and molybdenum niobium alloy.
18. LCD as claimed in claim 12 is characterized in that: this gate line is a double-decker, and this double-deck material is one of following combination of materials: molybdenum/neodymium aluminium alloy and neodymium aluminium alloy/chromium.
19. LCD as claimed in claim 12 is characterized in that: this gate line is a three-decker, and the material of this three-decker is one of following combination of materials: titanium/aluminium/titanium and molybdenum/aluminium/molybdenum.
20. LCD as claimed in claim 12 is characterized in that: this public electrode is a single layer structure, and its material is at least a in the group that forms of following material: aluminium, chromium, Nb-Al alloy, molybdenum and tungsten alloy and molybdenum niobium alloy.
21. LCD as claimed in claim 12 is characterized in that: this public electrode is a double-decker, and this double-deck material is one of following combination of materials: molybdenum/neodymium aluminium alloy and neodymium aluminium alloy/chromium.
22. LCD as claimed in claim 12 is characterized in that: this public electrode is a three-decker, and the material of this three-decker is one of following combination of materials: titanium/aluminium/titanium and molybdenum/aluminium/molybdenum.
23. LCD as claimed in claim 12 is characterized in that: this dielectric layer is selected from the group that following material forms at least a: silicon nitride, monox, phenylpropyl alcohol cyclobutane and acryl material.
24. LCD as claimed in claim 12 is characterized in that: this pixel electrode adopts transparent conductive material to make.
25. LCD as claimed in claim 24 is characterized in that: this transparent conductive material is indium zinc oxide or tin indium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100772272A CN100356261C (en) | 2004-12-01 | 2004-12-01 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100772272A CN100356261C (en) | 2004-12-01 | 2004-12-01 | Liquid crystal display |
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| Publication Number | Publication Date |
|---|---|
| CN1782825A CN1782825A (en) | 2006-06-07 |
| CN100356261C true CN100356261C (en) | 2007-12-19 |
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| CNB2004100772272A Expired - Fee Related CN100356261C (en) | 2004-12-01 | 2004-12-01 | Liquid crystal display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102088025A (en) | 2009-12-02 | 2011-06-08 | 群康科技(深圳)有限公司 | Thin film transistor substrate and method of manufacturing the same |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956103A (en) * | 1996-06-19 | 1999-09-21 | Sharp Kabushiki Kaisha | Active matrix substrate with the double layered structure |
| CN1246639A (en) * | 1998-07-24 | 2000-03-08 | 日本电气株式会社 | Active matrix-type liquid crystal display device |
| JP2001044442A (en) * | 1999-07-30 | 2001-02-16 | Casio Comput Co Ltd | Thin-film transistor panel |
| CN1357786A (en) * | 2000-12-05 | 2002-07-10 | 国际商业机器公司 | Pixel unit and its making process |
| CN1466703A (en) * | 2001-07-12 | 2004-01-07 | ���ǵ�����ʽ���� | Vertical alignment type liquid crystal display device and color filter substrate used in the LCD |
| CN1479145A (en) * | 2002-08-30 | 2004-03-03 | Nec液晶技术株式会社 | Manufacturing methd of liquid crystal display device |
| JP2004264652A (en) * | 2003-03-03 | 2004-09-24 | Seiko Epson Corp | Active matrix substrate, liquid crystal device, driving method of liquid crystal device, projection type display device |
| US20040195574A1 (en) * | 2003-04-03 | 2004-10-07 | Ahn Byung Chul | Liquid crystal display of horizontal electric field applying type and fabricating method thereof |
| CN2757177Y (en) * | 2004-12-18 | 2006-02-08 | 鸿富锦精密工业（深圳）有限公司 | Liquid crystal display |
-
2004
- 2004-12-01 CN CNB2004100772272A patent/CN100356261C/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956103A (en) * | 1996-06-19 | 1999-09-21 | Sharp Kabushiki Kaisha | Active matrix substrate with the double layered structure |
| CN1246639A (en) * | 1998-07-24 | 2000-03-08 | 日本电气株式会社 | Active matrix-type liquid crystal display device |
| JP2001044442A (en) * | 1999-07-30 | 2001-02-16 | Casio Comput Co Ltd | Thin-film transistor panel |
| CN1357786A (en) * | 2000-12-05 | 2002-07-10 | 国际商业机器公司 | Pixel unit and its making process |
| CN1466703A (en) * | 2001-07-12 | 2004-01-07 | ���ǵ�����ʽ���� | Vertical alignment type liquid crystal display device and color filter substrate used in the LCD |
| CN1479145A (en) * | 2002-08-30 | 2004-03-03 | Nec液晶技术株式会社 | Manufacturing methd of liquid crystal display device |
| JP2004264652A (en) * | 2003-03-03 | 2004-09-24 | Seiko Epson Corp | Active matrix substrate, liquid crystal device, driving method of liquid crystal device, projection type display device |
| US20040195574A1 (en) * | 2003-04-03 | 2004-10-07 | Ahn Byung Chul | Liquid crystal display of horizontal electric field applying type and fabricating method thereof |
| CN2757177Y (en) * | 2004-12-18 | 2006-02-08 | 鸿富锦精密工业（深圳）有限公司 | Liquid crystal display |
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| CN1782825A (en) | 2006-06-07 |
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