CN100353484C - Method for adjusting voltage on a powered faraday shield - Google Patents

Method for adjusting voltage on a powered faraday shield Download PDF

Info

Publication number
CN100353484C
CN100353484C CNB038184338A CN03818433A CN100353484C CN 100353484 C CN100353484 C CN 100353484C CN B038184338 A CNB038184338 A CN B038184338A CN 03818433 A CN03818433 A CN 03818433A CN 100353484 C CN100353484 C CN 100353484C
Authority
CN
China
Prior art keywords
voltage
coil
capacitor
inductively coupled
coupled plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB038184338A
Other languages
Chinese (zh)
Other versions
CN1672237A (en
Inventor
S·P·罗霍卡尔
A·库蒂
A·D·拜利三世
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN1672237A publication Critical patent/CN1672237A/en
Application granted granted Critical
Publication of CN100353484C publication Critical patent/CN100353484C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Abstract

An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.

Description

Be used to adjust the voltage method on the charged Faraday shield
Technical field
The present invention relates generally to the semiconductor manufacturing, more specifically relate to the voltage that is used to adjust on the charged Faraday shield to be controlled at the apparatus and method for of inductively coupled plasma etching reative cell ionic medium body performance.
Prior art
In semiconductor is made, the execution of the very general and continuous repetition of etching technics.As known to the skilled person, have two kinds of etching technics, dry etching and wet etchings.Dry etching utilizes inductively coupled plasma etching equipment to carry out usually.
Fig. 1 shows the inductively coupled plasma etching equipment 100 according to prior art.Inductively coupled plasma etching equipment 100 comprises etching reaction chamber 101, and its structure is defined by reaction chamber wall 102 and chamber window 104.Reaction chamber wall 102 is made of stainless steel usually, however the material that also can utilize other to be fit to.Chamber window 104 is made by quartz usually, yet, also can utilize other materials such as aluminium oxide (Al 2O 3), silicon nitride (Si 3N 4), aluminium nitride (AlN), carborundum (SiC) and silicon (Si).104 pairs of reaction chamber wall 102 of chamber window provide vacuum seal.On the chuck 108 that semiconductor wafer (being wafer) 110 is fixed on the bottom interior surface that is placed on etching reaction chamber 101.Coil 116 is positioned on the chamber window 104 with metallic shield 112.Coil 116 is fixed on the etching reaction chamber 101 by the insulation spacer (not shown).Coil 116 is made and comprise a complete circle coil at least by electric conducting material.Coil 116 shown in Fig. 1 comprises three circle coils.Coil 116 symbolic representation coils 116 with " * " rotate extension in the page.Opposite, the coil 116 symbolic representation coils 116 with " ● " extend toward page inner rotary.Metallic shield 112 utilize insulation spacer 114 with a fixed interval of separating under coil 116.Metallic shield 112 is arranged on next-door neighbour's chamber window 104.Coil 116, metallic shield 112, be set to parallel to each other basically with chamber window 104.In addition, coil 116 is electrically connected via a tap 118 with metallic shield 112.
Fig. 2 shows according to prior art, the basic principle of operation of inductively coupled plasma etching equipment 100.In the middle of operation, reacting gas flows through etching reaction chamber 101 to the gas discharge outlet (not shown) from the gas introduction port (not shown).High frequency power (being radio frequency (RF) power) is applied to coil 116 by the power supply (not shown) then, flows through the RF electric current of coil 116 with generation.The RF electric current that flows through coil 116 generates an electromagnetic field 120 around coil 116.Electromagnetic field 120 has produced induced current 122 in etching reaction chamber 101.Thereby induced current 122 acts on reacting gas and has produced plasma 123.High frequency power (being radio-frequency power) is applied to chuck 108 by a power supply (not shown) and provides directionality with article on plasma body 123, makes plasma 123 by on the surface that pulls down to wafer 110 and carry out etching technics.
Plasma 123 comprises the various free radicals that exist with the form of positive and negative ion.Use the chemical reaction of various forms of positive and negative ions to come etched wafer 110.In etching technics, the similar function of first coil in coil 116 execution and the transformer, and the similar function of second coil in plasma 123 execution and the transformer.
The product that etching technics produced may be volatility or non-volatile.The reacting gas that volatile product is accompanied by use sees through gas discharge outlet and discharges.Yet nonvolatile product can residue in the etching reaction chamber 101 usually.Nonvolatile product may adhere to reaction chamber wall 101 and chamber window 104.Nonvolatile product adheres to chamber window 104 can disturb etching technics.The interior zone of the non-volatile reaction products of depositing electrically conductive meeting electric screen etching reaction chamber 101 on chamber window 104 makes it avoid near the influence of coil 116 electromagnetic fields 120 that produced.Therefore, plasma 123 can't well bombard, and must interrupt etching technics, up to remove this deposit from chamber window 104.In addition, too much deposit can cause by chamber window 104 and fall particle on the wafer 110, has therefore disturbed etching technics.Therefore, too much deposit needs clean-up etch reative cell 101 and chamber window 104 more frequently.
The phenomenon that non-volatile reaction products is deposited on the chamber window 104 can be by relaxing with the removal deposit chamber window 104 sputter plasma and avoiding.Heterogeneity in the plasma 123, this sputter should be carried out in a uniform mode in entire reaction chamber window 104.Uneven deposition and/or uneven sputter meeting are introduced drift in the etching technics.It is reproducibility between uniform a plurality of wafer 110 that drift may stop its characteristic.
Metallic shield 112 as Faraday shield to guarantee being distributed to plasma 123 equably by the electromagnetic energy that coil 116 is produced.Because electromagnetic energy is distributed in the plasma 123 of chamber window 104 neighbouring areas uniformly, the phenomenon that non-volatile reaction products is deposited on the chamber window 104 can produce uniformly.Same, the sputter of the non-volatile reaction products of being come by chamber window 104 also can take place uniformly.The generation that has homogeneous plasma 123 characteristics that are beneficial to whole etching reaction chamber 101 in the uniform electrical characteristics of entire reaction chamber window 104.Yet, even deposition of non-volatile reaction products will foregoing interference etching technics on chamber window 104 uniformly.Therefore, need be to chamber window 104 sputter plasma 123 to avoid the generation of non-volatile reaction products deposition.Must carry out carefully chamber window 104 sputter plasma 123, with the erosion of the charged particle that minimizes or avoid plasma 123 chamber window 104.
Fig. 3 shows according to prior art, how to control Faraday shield voltage to influence the characteristic of chamber window 104.View 134 show by apply an appropriate voltage to metallic shield 112 with the control non-volatile reaction products for the deposition of chamber window 104 and the influence of sputter.By suitable voltage is applied to metallic shield 112, the incident ion 128 meeting quilts of plasma 123 are directed response chamber window 104 equably.The energy of incident ion 128 and intensity will prevent deposition, and the erosion effect with sputter minimizes simultaneously.View 136 shows that applying one crosses the effect of low-voltage to metallic shield 112.Use this low excessively voltage, the incident ion 130 that is directed to chamber window 104 will lack the generation that required energy and intensity prevent non-volatile reaction products, and this non-volatile reaction products is commonly referred to deposit 124.View 138 demonstrations apply the effect of a too high voltages to metallic shield 112.Use this too high voltage, the incident ion 132 that is directed to chamber window 104 has too high energy and intensity, therefore causes too much sputter.Too much sputter meeting causes the erosion 126 of chamber window 104.The service life of chamber window 104 is not only shortened in this erosion 126, also can produce the particle that pollutes wafer 110 and unwanted chemical substance is introduced in the etching technics environment.It is harmful especially that this unwanted chemical substance is present in the etching technics environment, because it can cause the reproducibility of bad etch technological condition.
Suitable Faraday shield voltage depends on performed specific etching technics.Some factors that can influence this suitable voltage comprise: the kind of reacting gas, be applied to coil 116 RF power, will be from wafer 110 etch material, and etching reaction chamber 101 in the process environments condition.Many etching method for makings comprise a plurality of etch step, as puncture step (breakthrough step), body etch step (bulk etch step), with over etching (over etch) step, wherein RF power, pressure, be different basically with gas composition.Therefore, for a given etch step, the specific settings of its suitable Faraday shield voltage may be suitable for other etch step.Therefore, Faraday shield voltage should not have the non-volatile reaction products deposition to guarantee chamber window 104 for controllable in etching technics.In addition, Faraday shield voltage should be to adjust easily, to adapt to the variation for the voltage request of different etching technology and step.In the prior art, etching apparatus is reconfigured by mechanical, to obtain to be used for the suitable Faraday shield voltage of specific etching technics.This mechanical reconfiguring has less operation window, and with the cost of material and to cause the angle of the time of low chip yield be very expensive
According to above-mentioned situation, need an apparatus and method for, can be easy to adjust the voltage of the Faraday shield that is applied to inductively coupled plasma etching equipment.
Summary of the invention
In short, the present invention satisfies the demand by the apparatus and method for that the voltage on a kind of Faraday shield that can adjust inductively coupled plasma etching equipment easily is provided.The sputter for the plasma of chamber window has been controlled in the adjustment of this Faraday shield voltage, to avoid and to reduce the deposition of non-volatile reaction products.Should be appreciated that at this present invention can implement in many ways, comprise technology, equipment, system, device or method.The following describes a plurality of embodiments of the invention.
In one embodiment, disclose a kind of inductively coupled plasma etching equipment, comprise: reative cell; Chamber window, in order to seal the upper end open of this reative cell, this chamber window has the inner surface of the interior zone that is exposed to this reative cell; Metallic shield, be disposed at this chamber window above; Coil is disposed at the top of this metallic shield and is spaced from, and this coil has input, output and length; Wherein this coil is defined as and comprises the RF standing wave on this coil, and this RF standing wave has the node at least one length that is positioned at this coil; The tap of conduction is configured on corresponding to coil near the position of the point of no-voltage this coil to be connected to this metallic shield, and the node that is positioned on the length of this coil near the point of no-voltage and at least one on the described coil is relevant; And control circuit, be electrically connected with this input and output, this control circuit is set to supply RF power to this input, this control circuit comprises first capacitor that is electrically connected with this output, this first capacitor is set to and can be adjusted, in order to the voltage control in this metallic shield one near zero voltage level between the scope of a higher voltage level, wherein select process voltage to be positioned at this scope.
In another embodiment, voltage adjusting method on a kind of Faraday shield of inductively coupled plasma etching equipment is disclosed.The capacitor fixing that the method comprises tuning capacitor arrives near Z-operation electric capacity, and wherein this tuning capacitor is connected to the coil of the plasma etching equipment of this inductance coupling high.The method also comprises the position of determining the node on this coil, and wherein this node correspondence is present in the node of the RF standing wave on this coil.When this tuning capacitor is fixed near Z-operation electric capacity, determine this node location.The method also comprises this coil is electrically connected to a metallic shield, and its link position is basically near the position of this node.This method also comprises adjusts this tuning capacitor to obtain for the voltage in the shielding of etching technics proper metal.
In another embodiment, a kind of inductively coupled plasma etching implementation of processes method is disclosed.It is to carry out at a reative cell (dispose this reative cell and be used for etched wafer) that this method is based on this inductively coupled plasma etching technology.This reative cell comprises a chamber window in a upper end open.This chamber window has outer surface and the inner surface that is exposed to the interior zone of this reative cell.Coil and metallic shield all are positioned on the outer surface of this chamber window.This metallic shield is configured between the outer surface of this coil and this chamber window with a state that separates.The capacitor fixing that this method comprises tuning capacitor arrives near Z-operation electric capacity, and wherein this tuning capacitor is connected to this coil.This method also comprises the position of determining the node on this coil.This node is present in the node of the RF standing wave on this coil when being fixed near Z-operation electric capacity when this tuning capacitor.This method also comprises this coil is electrically connected to this metallic shield, and its link position is basically near the position of this node.According to the method, adjust this tuning capacitor to obtain for the voltage in this suitable metallic shield of etching technics.This method also comprises carries out this etching technics.
The present invention has many advantages.Be apparent that most that the disclosed in the present invention apparatus and method for that is used for adjusting the Faraday shield voltage of inductively coupled plasma etching equipment can be avoided problems of the prior art for the sputter of etching reaction chamber window by the control plasma.The sputter of control plasma prevents from and has reduced non-volatile reaction products to be deposited on the chamber window.
In conjunction with the accompanying drawings, by the description of example of the present invention, other aspects of the present invention and advantage will become apparent from following detailed description.
Description of drawings
By the detailed description and the conjunction with figs. of reference the invention described above, will be more readily understood the present invention and more advantage thereof, wherein:
Fig. 1 shows the inductively coupled plasma etching equipment according to prior art;
Fig. 2 shows according to prior art, the basic principle of operation of inductively coupled plasma etching equipment;
Fig. 3 shows according to prior art, how to control Faraday shield voltage to influence the characteristic of chamber window;
Fig. 4 shows inductively coupled plasma etching equipment according to an embodiment of the invention;
Fig. 5 shows the circuit diagram of inductively coupled plasma etching equipment according to an embodiment of the invention;
Fig. 6 shows according to one embodiment of the invention, has the RF standing wave on the coil;
Fig. 7 shows that according to one embodiment of the invention, expression is present in the conductive path of the virtual short between Faraday shield and the earth terminal;
Fig. 8 shows according to one embodiment of the invention, Faraday shield and the exploded view that is used for fixing the element of Faraday shield;
Fig. 9 shows according to one embodiment of the invention, coil and the exploded view that is used for fixing the element of coil;
Figure 10 shows the experimental data figure of one exemplary embodiment according to the present invention, and this experimental data figure is obtained from Faraday shield voltage for the response of adjusting tuning capacitor;
Figure 11 shows the experimental data figure of one exemplary embodiment according to the present invention, and this experimental data figure is obtained under various exemplary condition of plasma, and Faraday shield voltage is for the response of adjusting tuning capacitor;
Figure 12 shows according to one embodiment of the invention, the voltage method flow chart on the Faraday shield of adjustment inductively coupled plasma etching equipment;
Figure 13 shows according to another embodiment of the present invention, the method flow diagram of voltage on the Faraday shield of adjustment inductively coupled plasma etching equipment; And
Figure 14 shows according to the present invention another embodiment again, the voltage method flow chart on the Faraday shield of adjustment inductively coupled plasma etching equipment.
Embodiment
The present invention discloses the apparatus and method for of the voltage on the Faraday shield that a kind of adjustment is applied to inductively coupled plasma etching equipment.In a broad sense, the present invention allows an appropriate voltage to be applied to a Faraday shield expediently and changeably, so that the control plasma sputtering is to avoid and the deposition of the non-volatile reaction products of mitigation meeting negative effect etching technics.The appropriate voltage that is used for specific etching technics or step is applied to Faraday shield by simple adjustment one tuning capacitor.Therefore, the present invention has eliminated mechanical etching apparatus is used for the suitable Faraday shield voltage of specific etching technics with acquisition the needs that reconfigure.
In ensuing narration,, many concrete details have been put down in writing in order to understand the present invention fully.Yet, one skilled in the art will appreciate that under the situation that does not have part or all of these details, also can implement the present invention.In other example,, do not describe known technological operation in detail for fear of obscuring the present invention.
Fig. 4 shows inductively coupled plasma etching equipment 2 05 according to an embodiment of the invention.Inductively coupled plasma etching equipment 205 comprises etching reaction chamber 101, and its structure is defined by reaction chamber wall 102 and chamber window 104.Reaction chamber wall 102 is made of stainless steel usually, however the material that also can utilize other to be fit to.Chamber window 104 is made up of quartzy institute usually, yet, also can utilize other materials such as aluminium oxide (Al 2O 3), silicon nitride (Si 3N 4), aluminium nitride (AlN), carborundum (SiC), and silicon (Si).104 pairs of reaction chamber wall 102 of chamber window provide vacuum seal.Semiconductor wafer (being wafer) 110 is fixed on the chuck 108 of the bottom interior surface that is positioned at etching reaction chamber 101.It is chuck 108 power supplies that RF power supply 240 sees through match circuit 242.The RF power that is applied to chuck 108 is used to provide the directionality of plasma 123, makes plasma 123 be directed on the wafer 110.
With reference to figure 4, coil 116 is positioned on the chamber window 104 with metallic shield (or Faraday shield) 112 again.Coil 116 is fixed on the etching reaction chamber 101 by the insulation spacer (not shown).Coil 116 is made and comprise a complete circle coil at least by electric conducting material.Coil 116 shown in Fig. 4 comprises three circle coils.Coil 116 symbolic representation coils 116 with " * " rotate extension in the page.Opposite, the coil 116 symbolic representation coils 116 with " ● " extend toward page inner rotary.Faraday shield 112 utilize insulation spacer 114 with an interval of separating be fixed in coil 116 below.
Insulation spacer 114 shown in Figure 4 is represented an exemplary configurations.Another structure can have to radially and inner the extension to fill up the insulation spacer 114 in the space between coil 116 and the Faraday shield 112.These big insulation spacer 114 structures can be used to avoid the voltage breakdown (as electric arc) between coil 116 and the Faraday shield 112.In another structure, insulation spacer 114 can surround the edge of Faraday shield 112 fully.In this structure, close Faraday shield 112 edges and the zone between chamber window 104 outer surfaces and Faraday shield 112 can be insulated pad 114 and occupy.The use of special insulation pad 114 structures depends on the space between coil 116 and the Faraday shield 112.
Faraday shield 112 is arranged on next-door neighbour's reative cell 104.Because Faraday shield 112 can capacitively be coupled to chamber window 104, so Faraday shield 112 can contact with outer (on reaching) surface of chamber window 104 or be positioned on the chamber window 104.Therefore, Faraday shield 112 can place, in conjunction with or be supported on the chamber window 104.Exemplary embodiments of the present invention shown in Fig. 4 show that Faraday shield 112 is supported on the chamber window 104.Coil 116, Faraday shield 112, be set to parallel to each other basically with chamber window 104.In addition, coil 116 is electrically connected via a tap 118 with Faraday shield 112.
RF power supply 212 is coil 116 power supplies.RF power supply 212 communicates by lead 207 and capacitor 210.Capacitor 210 communicates via lead 209 and capacitor 204 again.Capacitor 204 communicates via the input 201 of lead 211 with coil 116 again.One voltage Vin offers input 201 by capacitor 204.With input 201 complementations, coil also has an output 203.The output 203 of coil 116 communicates via a lead 213 and a capacitor 206.One voltage Vout offers capacitor 206 by output 203.Capacitor 206 communicates via lead 215 and earth terminal 214 again.Capacitor 208 communicates by lead 217 and capacitor 210 and capacitor 204, and lead 217 is electrically connected with lead 209.Capacitor 208 also is electrically connected with capacitor 206 and earth terminal 214 by lead 219, and lead 219 is electrically connected with lead 215.
In the middle of operation, reacting gas flows through etching reaction chamber 101 to the gas discharge outlet (not shown) from the gas introduction port (not shown).High frequency power (RF power) is applied to coil 116 by a power supply (not shown) then, flows through the RF electric current of coil 116 with generation.The RF electric current that flows through coil 116 produces an electromagnetic field around coil 116.Electromagnetic field has produced induced current in etching reaction chamber 101.This induced current acts on the reacting gas and has produced plasma 123.The sheath (sheath) that plasma 123 is formed by the non-plasma reacting gas surrounds.Therefore, high frequency power (being RF power) is applied to chuck 108 so that the directionality of plasma 123 to be provided by power supply 240 by match circuit 242, makes plasma 123 by on the surface that pulls down to wafer 110 and carry out etching technics.
Plasma 123 comprises the various free radicals that exist with the form of positive and negative ion.The chemical reaction of various forms of positive and negative ions is used to etched wafer 110.In etching technics, the similar function of first coil in coil 116 execution and the transformer, and the similar function of second coil in plasma 123 execution and the transformer.
Fig. 5 shows the circuit diagram of inductively coupled plasma etching equipment 205 according to an embodiment of the invention.At the input 201 of RF power supply 212, earth terminal 214, coil 116, described identical with Fig. 4 with electronic component and lead between the output 203 of coil 116.Electrical relation between the physical component of inductively coupled plasma etching equipment 205 is shown in the remainder of Fig. 5.
As show that coil 116 is electrically connected via a tap 118 with Faraday shield 112.Physical separation between coil 116 and the Faraday shield 112 causes capacitive effect.Specifically, along the length of the coil 116 between input 201 and the tap 118, electric capacity 216a is present between coil 116 and the Faraday shield 112.Same, along the length of the coil 116 between output 203 and the tap 118, electric capacity 216b is present between coil 116 and the Faraday shield 112.Physical separation between Faraday shield 112 and the chamber window 104 also causes a capacitive effect, shown in capacitor 218.
Coil 116 generates an electromagnetic field, to induce electric current in the reacting gas in etching reaction chamber 101.The electric current of being responded in reacting gas causes the plasma 123 that will be produced.Coil 116 and plasma 123 with respectively similar in appearance to the mode of first and second coil of a transformer by electric coupling.Therefore, shown coil 116 has inductance 221, and shown plasma 123 has inductance 224.Shown plasma 123 also has resistance 226 for induced current.In addition, the sheath that plasma 123 is formed by reacting gas surrounds, and it is separated charged plasma 123 and the reaction chamber wall 102 that is connected to earth terminal 214 effectively.The sheath that reacting gas is formed has electric capacity 222 and resistance 220.Remove chuck 108 fully from chamber window 104, make its electrical properties can not influence the electrical properties of coil 116 and Faraday shield 112.Therefore, chuck 108, its match circuit 242 and RF power supply 240 are not shown among Fig. 5 from the electrical relation in body etching apparatus 205 for inductance coupling high etc.
Faraday shield 112 in etching reaction chamber 101 plasma 123 and chamber window 104 between produce electrostatic field.The electrostatic field that is produced by Faraday shield 112 produces a voltage, and it makes the ion in the plasma 123 be accelerated towards chamber window 104 directions.This acceleration and the collision with chamber window 104 that causes are called sputter.The sputter meeting is removed the non-volatile reaction products that is deposited on the chamber window 104.Therefore, suitably the sputter of control can effectively be avoided and relax non-volatile reaction products and is deposited on the chamber window 104.
Be applied to Faraday shield 112 voltage control the electrostatic field that is produced by Faraday shield 112.Control is applied to the feasible sputter that can control 123 pairs of chamber window 104 of plasma of voltage of Faraday shield 112.Therefore, be applied to the voltage of Faraday shield 112 by careful control, the sputter that can control 123 pairs of chamber window 104 of plasma carefully can minimize the erosion effect of sputter to avoid deposition simultaneously.In order further the erosion effect of sputter to be minimized, replaceability embodiment of the present invention can place dielectric protective lining in the adjacent domain of chamber window 104 inner surfaces.Minimize for fear of deposition and with the erosion effect of sputter, the invention provides and a kind ofly be used for careful control and be applied to the apparatus and method for of the voltage of Faraday shield 112.
Fig. 6 shows according to one embodiment of the invention, is positioned at the RF standing wave on the coil 116.Shown coil 116 inputs 201 are corresponding to a positive amplitude top (being crest) 228 of RF standing wave.Opposite, shown coil 116 outputs 203 are corresponding to a negative amplitude top (being trough) 230 of RF standing wave.Therefore, node 232 is present on the length of coil 116.In the position of node 232, the voltage of corresponding coil 116 is basically near zero.If coil 116 long enoughs might have more than one node 232, wherein the distance between the node 232 depends on the RF frequency.Though embodiments of the invention show that one has the coil 116 of individual node 232, when having a plurality of node, apparatus and method for of the present invention remains unchanged.
Conventional transmission line theory is used to determine the distributed line properties as the coil 116 of effective transmission line.When determining the distributed line properties of coil 116, in the effect of plasma 123 is included in as the distribution impedance of modification.At coil 116 inputs 201 and coil 116 outputs 20 places, different RF power is carried out voltage and phase measurement.Voltage combines terminal impedance (being the resistance of capacitor 206) and is used to determine corresponding to the spatial distribution along the voltage of the R standing wave of coil 116 length with the measurement of phase place.Many methods can be used to determine the spatial distribution of voltage on the length of coil 116.One exemplaryly can be used to determine that the method for voltage spatial distribution sees " the Observations of StandingWaves on an Inductive Plasma Coil Modeled aS a UniformTransmission Line " that Albert J.Lamm is shown on the length of coil 116, and it is published among the Journal of Vacuum Scienceand Technology A15 (5) in 1997 the 2615th to 2622 page.
Fig. 7 shows that according to one embodiment of the invention, expression one is present in the conductive path of the virtual short 233 between Faraday shield 112 and the earth terminal 214.For virtual short 23 is existed, tap 118 should be electrically connected to coil 116 near the position along the node 232 of the RF standing wave of coil 116 length with Faraday shield 112 basic.By tap 118 is placed node 232, capacitor 206 is along a conductive path and RF standing wave resonance, and this conductive path is via coil 116 and tap 118 and be limited between capacitor 206 and the Faraday shield 112.Because capacitor 206 and RF standing wave resonance are so capacitor 206 presents low resistance.Therefore, between Faraday shield 112 and earth terminal 214 and via the conductive path of capacitor 206, form virtual short 233.
Make be connected to coil 116 that by configuration tap 118 capacitor 206 can be used as tuning capacitor in the position of node 232.The electric capacity that changes tuning capacitor can change the input 201 of coil 116 and the voltage V of output 203 InAnd V OutAny V InOr V OutChange can make the position change that is positioned at the node 232 on the RF standing wave of coil 116 length.Because the position of tap 118 is completely fixed, so the change of node 232 positions can cause tap 118 no longer to be positioned at the position of node 232.Therefore, by changing the electric capacity of tuning capacitor, the virtual short 233 that is present between Faraday shield 112 and the earth terminal 214 will no longer exist, and the voltage on the Faraday shield 112 begins to rise by zero.
The advantage of the position of the corresponding change node 232 of electric capacity of the present invention's utilization and change tuning capacitor.Specifically, the electric capacity of change tuning capacitor (being capacitor 206) (promptly adjusting) with the position of mobile node 232, makes the voltage of Faraday shield 112 change accordingly.Along with the position away from tap 118, the position of node 232, the voltage on the Faraday shield 112 also rises thereupon.In a preferred embodiment, tuning capacitor is a variable capacitor, and its electric capacity can be changed the voltage with control Faraday shield 112.Along with the electric capacity of tuning capacitor increases or reduces from numerical value (at this numerical value place, node 232 positions are corresponding to tap 118 positions), the voltage on the Faraday shield 112 also rises thereupon.Therefore, in order to increase the scope maximization of voltage on the Faraday shield 112, when node 232 positions are determined and tap 118 when being connected to the position of node 232, tuning capacitor should be set to basically near its position of minimum capacitance.By+----this structure, the electric capacity of tuning capacitor can increase by one in a big way, and Faraday shield 112 voltages can increase by one in a big way accordingly.In a preferred embodiment, the capacitance range of tuning capacitor is from 20pF to 500pF.In an exemplary embodiment of the present invention, by adjusting tuning capacitor at 45pF between the scope of 90pF, Faraday shield 112 voltages can be adjusted between about 1200V at about 0V.Faraday shield 112 voltages depend on the condition of specific etching technics and plasma 123 for the specific response of adjusting tuning capacitor.Corresponding to a bigger possibility, this bigger possibility is can obtain suitable voltage to satisfy the needs of specific etching technics an ability of adjusting Faraday shield 112 voltages on a large scale.
Fig. 8 shows according to one embodiment of the invention, Faraday shield 112 and the exploded view that is used for fixing the element of Faraday shield 112.Faraday shield 112 is fixed in the bottom of connection box 312 by a plurality of bolts 302, and connection box 312 is equipped with a plurality of connection pads 314.Each connects pad 314 is fixed in connection box by bolt 310 top.Connection box 312, connect pad 314, bolt 310, can be formed by any suitable insulating material with a plurality of bolts 302.A plurality of radial slots 300 are formed in the Faraday shield 112.A plurality of radial slots 300 can prevent that radial current from flowing in the Faraday shield 112 of conduction, wherein radial current is the induction by current that is flowed by on the coil 116.These are necessary, because the electric current that is flowed on the Faraday shield 112 can be with coil 116 and etching reaction chamber 101 electric screen each other.Consider a plurality of radial slots 300, in order to keep the shape of Faraday shield 112, external rings 304, inner loop 306, be fixed to connection box 312 by a plurality of bolts 302 with center disk 308.External rings 304, inner loop 306, can form by any suitable insulating material with center disk 308.The alternative embodiment of Faraday shield 112 can be used to combine with the present invention, as long as be configured to act on Faraday shield 112 similar.
Fig. 9 shows according to one embodiment of the invention, coil 116 and the exploded view that is used for fixing the element of coil 116.As shown in Figure 8 before, connection box 312 be connected pad 314 and be disposed between Faraday shield 112 and the coil 116.Four ends of each chiasma type coil stationary plate 326 are fixed in by bolt 331 supports spring casing 330.Four ends of each chiasma type coil stationary plate 326 also are fixed in the connection pad 314 of connection box 312 by bolt 328.Coil 116 is fixed in the bottom of chiasma type coil stationary plate 326 by a plurality of bolts 336 (only showing for drawing is clear).In this structure, coil 116 separates with a substantially parallel mode and a Faraday shield 112.
Tap 118 is connected to coil 116 near the position of node 232 basically one.With regard to electrically, node 232 is an a single point.Therefore, do not need very accurately tap to be placed in the position of node 232.Yet, when tap 118 when one is connected to coil 116 near the position of node 232 basically, node 232 can be moved by adjusting tuning capacitor, to obtain aforesaid virtual short.According to above-mentioned consideration, shown in arrow 354, tap 118 is inserted between coil 116 and the Faraday shield 112.In the embodiment shown in fig. 9, tap 118 is fixed to coil 116 by bolt 352, and is fixed to Faraday shield 112 by bolt 353.In interchangeable embodiment, tap 118 can otherwise be fixed on coil 116 and the Faraday shield 112, makes each in conjunction with all being conduction and fixing (as melting metal solder, electric welding etc.).In addition, tap 118 can be formed by any electric conducting material.Tap 118 are coils 116 with Faraday shield 112 between unique conduction be connected.In a preferred embodiment, tap 118 is connected to Faraday shield 112 by striding across the shortest as far as possible air line distance with coil 116.In other embodiments, tap 118 can be arbitrary shape, and it is connected to Faraday shield 112 by the distance that strides across outside the shortest as far as possible air line distance with coil 116.
Fig. 9 also shows coil member 318 always, and it is across chiasma type coil stationary plate 326 tops and is fixed on the coil 116 by bolt 332.Curved coil member 322 is disposed at close coil 116 central authorities and is positioned at the bottom of chiasma type coil stationary plate 326, and is fixed to linear coil member 318 by bolt 334.Input 338 is fixed to the end of curved coil member 322 by bolt 340.Output 342 is fixed in end with respect to the coil 116 of input 338 by bolt 344.Other embodiment of coil 116 can be used to combine with the present invention, as long as be configured to act on coil 116 similar.
Figure 10 shows the experimental data figure of one exemplary embodiment according to the present invention, and this experimental data figure is obtained from Faraday shield 112 voltages for the response of adjusting tuning capacitor.Curve 402 shows an example, and oxygen plasma 123 is at pressure 5mT and RF power under the situation at 1000W, the scope of the voltage that produces on the Faraday shield 112.In this example, along with tuning capacitor is adjusted to about 80pF by about 60pF, Faraday shield 112 voltages are by very changing to about 1200V near 0V basically.When the capacitance settings of tuning capacitor can obtain node 232 for very near 61pF the time.Note that the curve among Figure 10 is based on actual Faraday shield 112 voltage measurements of limited quantity and obtains.Therefore, as shown in figure 10, can not arrive the level of 0V fully at node 232 according to the curve of actual measurement data institute match.Yet, as previously mentioned, adjust the position that tuning capacitor can be used to node 232 is placed in tap 118, make corresponding Faraday shield 112 voltages convergence 0V basically.Therefore, near the accurate node location of adjusting tuning capacitor can accurate positioning capacitance 61pF.
Figure 11 shows the experimental data figure of one exemplary embodiment according to the present invention, and it is obtained under various exemplary plasma 123 situations, and Faraday shield 112 voltages are for the response of adjusting tuning capacitor.Figure 11 is presented under the condition of various oxygen plasmas 123, results from the scope of the voltage on the Faraday shield 112.Curve 402 corresponding to oxygen plasma 123 in pressure 5mT and RF power situation, as shown in Figure 10 before at 1000W.Curve 404 corresponding to oxygen plasma 123 in pressure 80mT and RF power situation at 300W.Curve 406 corresponding to oxygen plasma 123 in pressure 80mT and RF power situation at 100W.When the capacitance settings of tuning capacitor can obtain node 232 near 61pF the time.Note the conditional independence of node 232 positions and plasma 123.The independence of these node 232 position article on plasma body 123 conditions allows to adjust Faraday shield 112 voltages by the use tuning capacitor, and does not need to settle again the position of tap 118 or reconfigure inductively coupled plasma etching equipment 100.The example of Figure 11 is based on and utilizes oxygen to be reacting gas.Yet by utilizing other suitable reacting gas, basic principle of the present invention and function remain unchanged.As Figure 10, note that actual Faraday shield 112 voltage measurements that the curve among Figure 11 is based on limited quantity obtain.Therefore, as shown in figure 11, can not arrive the level of 0V fully at node 232 according to the curve of actual measurement data institute match.Yet, as previously mentioned, adjust the position that tuning capacitor can be used to node 232 is placed in tap 118, so that corresponding Faraday shield 112 voltages convergence 0V basically.Therefore, near capacitance 61pF, accurately adjust tuning capacitor and can locate accurate node location.
Figure 12 shows according to one embodiment of the invention, the voltage method flow chart of the Faraday shield 112 of adjustment inductively coupled plasma etching equipment 100.In the method, step 600 comprises the capacitor fixing of tuning capacitor near Z-operation electric capacity.The step 602 of the method need determine to be present in node 232 positions of the RF standing wave on the coil 116.Execution in step 602 when tuning capacitor is fixed near Z-operation electric capacity.Step 604 needs tap 118 in an approaching basically position by the determined RF standing wave node 232 of step 602, and coil 116 is electrically connected to Faraday shield 112.Step 606 requires to adjust tuning capacitor to obtain required Faraday shield 112 voltages for a specific etching technics.Step 608 comprises this specific etching technics of execution.
Figure 13 shows according to another embodiment of the present invention, the Faraday shield 112 voltage method flow charts of adjustment inductively coupled plasma etching equipment 100.In the method, step 620 comprises the capacitor fixing of tuning capacitor near Z-operation electric capacity.Step 622 need determine to be present in the position of the node 232 of the RF standing wave on the coil 116.When tuning capacitor is fixed near Z-operation electric capacity, execution in step 622.Step 624 requires tap 118 in an approaching basically position by the determined RF standing wave node 232 of step 622, and coil 116 is electrically connected to Faraday shield 112.Step 626 need be ready to first etch step that inductively coupled plasma etching equipment 100 is used for a plurality of etching technics steps.Step 628 requires to adjust tuning capacitor for the present etch step of a plurality of etching technics steps, to obtain required Faraday shield 112 voltages.Step 630 comprises this present etch step of execution.Determining step 632 judges whether present etch step is the final step of a plurality of etching technics steps.If etch step is not final step at present, the method is proceeded by execution in step 634, and the next etch step of wherein a plurality of etching technics steps becomes present etch step.The method is proceeded step 628 then, wherein adjusts adjustable condenser to obtain required Faraday shield 112 voltages for present etch step.About determining step 632,, then stop a plurality of etching technics steps if etch step is final step at present.
Figure 14 shows according to the present invention another embodiment again, adjusts the Faraday shield 112 voltage method flow charts of inductively coupled plasma etching equipment 100.In the method, step 650 comprises the capacitor fixing of tuning capacitor near Z-operation electric capacity.Step 652 need determine to be present in the position of the node 232 of the RF standing wave on the coil 116.When step 652 is fixed near Z-operation electric capacity at tuning capacitor, execution in step 652.Step 654 require tap 118 basically near by the position of the determined RF standing wave node 232 of step 652, coil 116 is electrically connected to Faraday shield 112.Step 656 requires inductively coupled plasma etching equipment 100 should be ready to be used for first etch step of a plurality of etching technics steps.Step 658 requires the present etch step for a plurality of etching technics steps, adjusts tuning capacitor to obtain required Faraday shield 112 voltages.Step 660 comprises this present etch step of execution.
When carrying out present etch step, monitor that chamber window 104 is to detect the deposition of non-volatile etch by-products material.Many technology can be used to monitor and detect the deposition of non-volatile etch by-products material in chamber window 104.The optical reflection mensuration that a kind of like this example is a film.The present invention also can utilize the variation that detects Faraday shield 112 voltages as standard of measurement, to detect the deposition of non-volatile etch by-products material.Determining step 662 is represented the supervision of this deposition.If the deposition of detecting, just carry out step 668, the electric capacity that wherein increases tuning capacitor is to improve Faraday shield 112 voltages.Raising Faraday shield 112 voltages will cause the increase of 123 pairs of chamber window 104 sputters of plasma.The increase of 123 pairs of chamber window 104 sputters of plasma can be removed the deposition that is detected and be avoided further deposition.Among step 668 is adjusted tuning capacitor or afterwards, continue to carry out present etch step.
When carrying out present etch step, monitor that chamber window 104 is to detect the excessive sputter of plasma 123 in addition.Determining step 664 is represented the supervision of plasma 123 sputters.If detect excessive sputter, just carry out step 670, the electric capacity that wherein reduces tuning capacitor is to reduce Faraday shield 112 voltages.Reduce the minimizing that Faraday shield 112 voltages will cause 123 pairs of chamber window 104 sputters of plasma.The minimizing of 123 pairs of chamber window 104 sputters of plasma has prevented the erosion of chamber window 104 materials.Therefore, prevented from unwanted chamber window 104 chemical substances are introduced the etching environment, and the service life that can improve chamber window 104.Among step 670 is adjusted tuning capacitor or afterwards, proceed present etch step.
Shown in determining step 666, proceed present etch step till finishing.After finishing present etch step, determining step 672 judges whether present etch step is the final step of a plurality of etching technics steps.If etch step is not final step at present, the method is proceeded by execution in step 674, and the next etch step of wherein a plurality of etching technics steps becomes present etch step.This method is proceeded step 658 then, wherein adjusts tuning capacitor to obtain required Faraday shield 112 voltages for present etch step.About determining step 672,, then stop a plurality of etching technics steps if etch step is final step at present.
Though with regard to some embodiment the present invention has been described, those skilled in the art can make amendment, increase, reach the change of equivalence to it by aforesaid explanation and accompanying drawing.Therefore, any do not break away from spirit of the present invention and scope these revise, increase, and the change of equivalence, all should be included within the scope of the present invention.

Claims (21)

1. inductively coupled plasma etching equipment comprises:
Reative cell;
Chamber window, in order to seal the upper end open of this reative cell, this chamber window has the inner surface of the interior zone that is exposed to this reative cell;
Metallic shield, be disposed at this chamber window above;
Coil is disposed at the top of this metallic shield and is spaced from, and this coil has input, output and length; Wherein this coil is defined as and comprises the RF standing wave on this coil, and this RF standing wave has the node at least one length that is positioned at this coil;
The tap of conduction is configured on corresponding to coil near the position of the point of no-voltage this coil to be connected to this metallic shield, and the node that is positioned on the length of this coil near the point of no-voltage and at least one on the described coil is relevant; And
Control circuit, be electrically connected with this input and output, this control circuit is set to supply RF power to this input, this control circuit comprises first capacitor that is electrically connected with this output, this first capacitor is set to and can be adjusted, in order to the voltage control in this metallic shield one near zero voltage level between the scope of a higher voltage level, wherein select process voltage to be positioned at this scope.
2. inductively coupled plasma etching equipment as claimed in claim 1, wherein the tap of this conduction also is configured to across the short lines distance between this coil and this metallic shield.
3. inductively coupled plasma etching equipment as claimed in claim 1, wherein this first capacitor is a variable capacitor, and it is set to have an opereating specification, and this opereating specification comprises the capacitance between position of minimum capacitance and maximum capacitor value.
4. inductively coupled plasma etching equipment as claimed in claim 3, wherein this variable capacitor is set to basically near this position of minimum capacitance, and the corresponding control voltage in this metallic shield is basically near zero voltage level.
5. inductively coupled plasma etching equipment as claimed in claim 4 wherein is provided with this variable capacitor, makes the proportional voltage that is relevant in this metallic shield of this electric capacity.
6. require 3 described inductively coupled plasma etching equipment as the wooden fork profit, also comprise motor, this motor is set to engage with this variable capacitor, and this motor also is set to control this variable capacitor.
7. inductively coupled plasma etching equipment as claimed in claim 1, wherein this first capacitor is used to control the voltage in this metallic shield, optimally to reduce the sputter on the inner surface of this chamber window, avoid the deposition of etch by-products on the inner surface of this chamber window simultaneously basically.
8. inductively coupled plasma etching equipment as claimed in claim 1, wherein this control circuit also comprises:
Second capacitor is electrically connected with the input of this coil;
The 3rd capacitor is connected with this second capacitor electrode, and the 3rd capacitor arrangements becomes to receive RF power;
The 4th capacitor is connected with this first capacitor, second capacitor and the 3rd capacitor electrode; And
Earth terminal is connected with the 4th capacitor electrode with this first capacitor.
9. inductively coupled plasma etching equipment as claimed in claim 1 also comprises the insulating material in the space that is disposed between this coil and this metallic shield.
10. inductively coupled plasma etching equipment as claimed in claim 1 also comprises a protective lining, is disposed at the inner surface near this chamber window basically.
11. the voltage method on the Faraday shield that is used to adjust inductively coupled plasma etching equipment comprises:
Fixedly the electric capacity of tuning capacitor is extremely near Z-operation electric capacity, and this tuning capacitor is connected to the coil of this inductively coupled plasma etching equipment;
Determine the position of the node on this coil, this node is present in the node of the RF standing wave on this coil when being fixed near Z-operation electric capacity when this tuning capacitor;
This coil is electrically connected to metallic shield, and its link position is the position of close this node basically; And
Adjust this tuning capacitor to obtain the required voltage in this metallic shield, the required voltage in this metallic shield is suitable for etching technics.
12. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 11 is wherein adjusted this tuning capacitor and carried out by the control motor, this motor engages with this tuning capacitor.
13. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 11 also comprises:
Monitor this etching technics to determine the well-formedness of the voltage in this metallic shield, this supervision comprises the existence of detection etch by-product deposition; And
Adjust this tuning capacitor to keep the appropriate voltage in this metallic shield, the appropriate voltage in this metallic shield fully prevents the deposition of etch by-products.
14. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 11 also comprises:
Monitor this etching technics to determine the well-formedness of the voltage in this metallic shield, the well-formedness of this voltage is based on the requirement of etching technics; And
Adjust this tuning capacitor to keep the appropriate voltage in this metallic shield, the appropriate voltage in this metallic shield can fully satisfy the requirement of etching technics.
15. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 11, wherein this inductively coupled plasma etching equipment comprises: in order to the reative cell of etched wafer, this reative cell comprises chamber window in upper end open, this chamber window has outer surface and the inner surface that is exposed to the interior zone of this reative cell, be positioned at the coil on the outer surface of this chamber window, and being positioned at metallic shield on the outer surface of this chamber window, this metallic shield is placed between the outer surface of this coil and this chamber window with the state that separates.
16. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 15, wherein this method also comprises:
Carry out a plurality of etching technics steps, each step of these a plurality of etching technics steps may need the voltage in the different metallic shields; And
Adjusting this tuning capacitor between the etching technics step to obtain the required voltage in this metallic shield, this required voltage is suitable for ensuing etching technics step.
17. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 16, wherein carry out a plurality of etching technics steps, and between the etching technics step, adjust this tuning capacitor from moving according to predetermined method for making.
18. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 17 also comprises:
Monitor the deposition of the inner surface of this chamber window with the detection etch byproduct material, this supervision is to carry out in each step of these a plurality of etching technics steps; And
Automatically control this tuning capacitor to control the voltage in this metallic shield, the control voltage in this metallic shield prevents that the etch by-products material further is deposited on the inner surface of this chamber window.
19. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 18 also comprises:
The inner surface that monitors this chamber window is to detect sputter, and this supervision is to carry out in each step of these a plurality of etching technics steps; And
Automatically control this tuning capacitor controlling the voltage in this metallic shield, the control voltage in this metallic shield prevents the further sputter on the inner surface of this chamber window.
20. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 15 also comprises:
Carry out etching technics;
Monitor the deposition of the inner surface of this chamber window with the detection etch byproduct material, this supervision is carried out during etching technics; And
Automatically control this tuning capacitor to control the voltage in this metallic shield, the control voltage in this metallic shield prevents that the etch by-products material further is deposited on the inner surface of this chamber window.
21. the voltage method on a kind of Faraday shield that is used to adjust inductively coupled plasma etching equipment as claimed in claim 15 also comprises:
Carry out etching technics;
The inner surface that monitors this chamber window is to detect sputter, and this supervision is carried out during etching technics; And
Automatically control this tuning capacitor controlling the voltage in this metallic shield, the control voltage in this metallic shield prevents the further sputter on the inner surface of this chamber window.
CNB038184338A 2002-07-31 2003-07-23 Method for adjusting voltage on a powered faraday shield Expired - Lifetime CN100353484C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21023902A 2002-07-31 2002-07-31
US10/210,239 2002-07-31

Publications (2)

Publication Number Publication Date
CN1672237A CN1672237A (en) 2005-09-21
CN100353484C true CN100353484C (en) 2007-12-05

Family

ID=31187255

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038184338A Expired - Lifetime CN100353484C (en) 2002-07-31 2003-07-23 Method for adjusting voltage on a powered faraday shield

Country Status (7)

Country Link
US (1) US7413673B2 (en)
EP (1) EP1525602A2 (en)
JP (1) JP4741839B2 (en)
CN (1) CN100353484C (en)
AU (1) AU2003259241A1 (en)
TW (1) TWI232515B (en)
WO (1) WO2004012221A2 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7595271B2 (en) * 2005-12-01 2009-09-29 Asm America, Inc. Polymer coating for vapor deposition tool
JP4888076B2 (en) * 2006-11-17 2012-02-29 パナソニック株式会社 Plasma etching equipment
JP2011124293A (en) 2009-12-09 2011-06-23 Hitachi High-Technologies Corp Plasma processing apparatus
US8987678B2 (en) * 2009-12-30 2015-03-24 Fei Company Encapsulation of electrodes in solid media
JP5711953B2 (en) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ Plasma processing equipment
US9293353B2 (en) 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
US9966236B2 (en) 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
WO2013099372A1 (en) 2011-12-27 2013-07-04 キヤノンアネルバ株式会社 Discharge vessel and plasma treatment device
US8664717B2 (en) 2012-01-09 2014-03-04 Globalfoundries Inc. Semiconductor device with an oversized local contact as a Faraday shield
US9867238B2 (en) 2012-04-26 2018-01-09 Applied Materials, Inc. Apparatus for treating an exhaust gas in a foreline
CN103457118A (en) * 2012-05-29 2013-12-18 上海宏力半导体制造有限公司 Radio frequency coil connector with gasket
US9064868B2 (en) 2012-10-12 2015-06-23 Globalfoundries Inc. Advanced faraday shield for a semiconductor device
US9029267B2 (en) 2013-05-16 2015-05-12 Lam Research Corporation Controlling temperature of a faraday shield
US9384948B2 (en) * 2013-06-13 2016-07-05 Lam Research Corporation Hammerhead TCP coil support for high RF power conductor etch systems
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
KR101652845B1 (en) * 2014-08-08 2016-09-01 인베니아 주식회사 An plasma generating module and an plasma process apparatus comprising that
JP6561804B2 (en) 2015-12-03 2019-08-21 三菱電機株式会社 Manufacturing method of semiconductor device
CN106937474B (en) * 2015-12-31 2020-07-31 中微半导体设备(上海)股份有限公司 Inductively coupled plasma processor
US20170278680A1 (en) * 2016-03-28 2017-09-28 Lam Research Corporation Substrate processing system including coil with rf powered faraday shield
JP6715129B2 (en) * 2016-08-31 2020-07-01 東京エレクトロン株式会社 Plasma processing device
US10896806B2 (en) * 2016-11-03 2021-01-19 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
US10541114B2 (en) * 2016-11-03 2020-01-21 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
US10903046B2 (en) * 2016-11-03 2021-01-26 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
CN113130281B (en) * 2019-12-31 2022-07-29 江苏鲁汶仪器有限公司 Plasma processing system and Faraday shielding device contained therein
JP2022067321A (en) * 2020-10-20 2022-05-06 東京エレクトロン株式会社 Plasma generation device, plasma processing device, and plasma processing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2249451Y (en) * 1995-05-11 1997-03-12 中国科学院微电子中心 Technical device of high-density plasma
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
CN1308771A (en) * 1998-05-06 2001-08-15 东京电子亚利桑那公司 Method and apparatus for ionized physical vapor deposition
US20020084035A1 (en) * 1996-11-27 2002-07-04 Hideyuki Kazumi Plasma processing apparatus and method
US6422173B1 (en) * 2000-06-30 2002-07-23 Lam Research Corporation Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3429391B2 (en) * 1995-05-22 2003-07-22 株式会社アルバック Plasma processing method and apparatus
JP5047423B2 (en) * 2000-03-31 2012-10-10 ラム リサーチ コーポレーション Inductively coupled plasma etching system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2249451Y (en) * 1995-05-11 1997-03-12 中国科学院微电子中心 Technical device of high-density plasma
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US20020084035A1 (en) * 1996-11-27 2002-07-04 Hideyuki Kazumi Plasma processing apparatus and method
CN1308771A (en) * 1998-05-06 2001-08-15 东京电子亚利桑那公司 Method and apparatus for ionized physical vapor deposition
US6422173B1 (en) * 2000-06-30 2002-07-23 Lam Research Corporation Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system

Also Published As

Publication number Publication date
AU2003259241A1 (en) 2004-02-16
WO2004012221A3 (en) 2004-07-01
WO2004012221A2 (en) 2004-02-05
JP2005535117A (en) 2005-11-17
US7413673B2 (en) 2008-08-19
JP4741839B2 (en) 2011-08-10
TW200405462A (en) 2004-04-01
US20050194355A1 (en) 2005-09-08
TWI232515B (en) 2005-05-11
CN1672237A (en) 2005-09-21
EP1525602A2 (en) 2005-04-27

Similar Documents

Publication Publication Date Title
CN100353484C (en) Method for adjusting voltage on a powered faraday shield
US11908661B2 (en) Apparatus and methods for manipulating power at an edge ring in plasma process device
KR100542459B1 (en) Apparatus for treating substrate by plasma and method thereof
US11830747B2 (en) Plasma reactor having a function of tuning low frequency RF power distribution
KR101513322B1 (en) Methods and arrangements for plasma processing system with tunable capacitance
CN102106191B (en) Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring
JP4852189B2 (en) Plasma processing apparatus and plasma processing method
EP1193746B1 (en) Apparatus for plasma processing
KR101700981B1 (en) Multifrequency capacitively coupled plasma etch chamber
US20190006155A1 (en) Plasma reactor having a function of tuning low frequency rf power distribution
JP5492070B2 (en) Method and plasma processing apparatus for inducing a DC voltage on an electrode facing a wafer
KR20060087474A (en) Process kit for using in a plasma processing chamber
US11094509B2 (en) Plasma processing apparatus
KR100888807B1 (en) Apparatus for generating plasma
CN109961997A (en) Plasma processing apparatus and its DC offset voltage control method
KR100849709B1 (en) Plasma chamber having multiple RF source frequencies
WO2023043558A1 (en) Distortion current mitigation in a radio frequency plasma processing chamber
EP1269512B1 (en) Inductively coupled plasma etching apparatus with active control of RF peak-to-peak voltage
JP5244123B2 (en) Electric field reduction device for plasma containment
KR100873923B1 (en) Plasma generator
KR100907438B1 (en) Plasma generator
KR20230026506A (en) Pulsed Voltage Boost for Substrate Processing
KR20210120291A (en) Focus ring, chuck assembly for securing a substrate and plasma treatment apparatus having the same
KR101045146B1 (en) Method for adjusting voltage on a powered faraday shield
US20230071168A1 (en) Method and apparatus for digital control of ion energy distribution in a plasma

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20071205