CN100353244C - Liquid crystal display device, and its manufacturing method anbd transistor array substrate and manufacturing method - Google Patents
Liquid crystal display device, and its manufacturing method anbd transistor array substrate and manufacturing method Download PDFInfo
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- CN100353244C CN100353244C CNB2004100009924A CN200410000992A CN100353244C CN 100353244 C CN100353244 C CN 100353244C CN B2004100009924 A CNB2004100009924 A CN B2004100009924A CN 200410000992 A CN200410000992 A CN 200410000992A CN 100353244 C CN100353244 C CN 100353244C
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- etch stop
- stop layer
- substrate
- viewing area
- lcd
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Abstract
The present invention relates to a liquid crystal display device, a manufacturing method of the liquid crystal display device, a transistor array base plate of the liquid crystal display device and a manufacturing method of the transistor array base plate of the liquid crystal display device. The manufacturing method of the liquid crystal display device comprises the following steps: a base plate is provided; an etching barrier layer is formed on the base plate; a source electrode-drain electrode region is formed on the etching barrier layer; an insulating layer is formed on the etching barrier layer; a plurality of grid electrode wires which are mutually parallel and a plurality of data wires which are mutually parallel are arranged on the insulating layer, and the grid electrode wires and the data wires are vertically crossed; a display region is defined between the two adjacent grid electrode wires and the two adjacent data wires; a source electrode is electrically connected with one data wire of the two adjacent data wires; an insulating layer of an etching display region is limited until the etching barrier layer is exposed so that the degree of penetration of light in the display region is increased; a picture element electrode is formed on a protective layer of the display region and is electrically connected with a drain electrode; a second base plate is provided and is arranged above the corresponding first base plate; the first base plate and the second base plate are abutted; liquid crystal is filled between the first base plate and the second base plate.
Description
Technical field
The present invention is particularly to the LCD that can improve the Newton ring phenomenon and preparation method thereof relevant for LCD and preparation method thereof.
Background technology
LCD (liquid crystal display, hereinafter to be referred as LCD) be the main flow of present flat-panel screens development, its displaying principle is dielectric anisotropy and the conduction anisotropy that utilizes liquid crystal molecule to have, the ordered state of liquid crystal molecule is changed, cause liquid crystal film to produce various photoelectric effect.
The panel construction of LCD is generally to be coincided by two plate bases and forms, and the space of certain distance is left in order to the perfusion liquid crystal in the centre, and is being formed with counter electrode respectively on the two substrates up and down, turning to and arranging in order to the control liquid crystal molecule.
General thin film transistor (TFT) (Thin Film Transistor; TFT) panel of LCD is provided with the TFT multiple substrate of thin film transistor (TFT) array by a slice and colored filter substrate that a slice is provided with colored light filter membrane layer is formed, and below with reference to Fig. 1 the detailed structure of TFT multiple substrate is described.
Fig. 1 shows the fragmentary cross-sectional view of a TFT multiple substrate.As shown in Figure 1, an insulated substrate (for example glass, quartz etc.) 101 is provided with a polysilicon layer, and it divides into source area 102, the drain region 103 that is mixed with impurity, and channel region 104; Gate insulator 107 is covered on the insulated substrate 101; Grid 108 is arranged on the gate insulator 107; Interbedded insulating layer 112 is covered on the substrate 101; Between interlayer insulating film 112 and gate insulator 107, be formed with communicate contact hole 110,111, and source electrode 122 is electrical connected with source area 102 via contact hole 110; Drain electrode 123 is electrical connected with drain region 103 via contact hole 111.One protective seam 130 is covered on source electrode 122, drain electrode 123 and the substrate 101, and it has a contact hole 130a, and pixel electrode 105 and drain electrode 123 are electrical connected.
To promptly become a panel of LCD after this substrate 101 and the colored filter substrate combination.In Fig. 1, pixel electrode 105 regions are predetermined viewing area (being photic zone), because insulation courses such as gate insulator 107, interlayer insulating film 112 do not remove in this zone, therefore after panel completes, extraneous incident light can form reflection at the insulation course on this photic zone, and then form interference fringe with the light that on colored filter substrate, reflects, and form the Newton ring phenomenon, influence the outward appearance of LCD.In addition, the insulation course of photic zone top is blocked up also can be absorbed backlightly, reduces the brightness of light and consumes the energy backlight.
Summary of the invention
In view of this, the objective of the invention is to improve the Newton ring phenomenon of LCD, and reduce the consumption of backlight power.
For reaching above-mentioned purpose, the present invention is by the insulation course that removes top, viewing area (being photic zone), with the Newton ring phenomenon that can form after avoiding ambient light to reflect at the incident liquid crystal panel and via the photic zone insulation course.In addition, the insulation course that removes on the photic zone can promote penetrance backlight, thereby reaches the function that reduces backlight power consumption.
LCD provided by the present invention comprises a upper substrate, a liquid crystal layer and an infrabasal plate, wherein is formed with an etch stop layer on the infrabasal plate; One source pole-drain region is formed on the etch stop layer, and an insulation course covers above-mentioned etch stop layer, and (photic zone) exposes etch stop layer in the viewing area; The data line that the gate line that a plurality of are parallel to each other and a plurality of are parallel to each other is arranged on the above-mentioned insulation course, wherein gate line and data line intersect vertically, between adjacent two gate lines and adjacent two data lines, be defined as above-mentioned photic zone, and data line forms and electrically connects one of in source electrode and adjacent two data lines; One protective seam be covered in the top of those gate lines and those data lines, and this protective seam at least a portion is contacted with the top surface of this etch stop layer of this viewing area; One pixel electrode is formed on one of photic zone protective seam, and forms electric connection with drain electrode.
The present invention also provides a kind of transistor array substrate of LCD, comprising: a substrate, and definition has a transistor area and a viewing area on it; One etch stop layer is formed on the substrate; One transistor is arranged on the etch stop layer of transistor area, and this transistor comprises gate insulator, and this gate insulator exposes etch stop layer in the viewing area; One protective seam is covered on transistor and the viewing area, and this protective seam at least a portion is contacted with the top surface of this etch stop layer of this viewing area; And one pixel electrode be formed on the protective seam, and form electric connection via contact hole and a transistor.
The present invention still provides a kind of method for making of LCD transistor array substrate, comprising: a substrate is provided, is formed with an etch stop layer on it; Form one source pole-drain region on etch stop layer; Form an insulation course on etch stop layer; A plurality of gate lines that are parallel to each other and a plurality of data lines that is parallel to each other are set on insulation course, between adjacent two gate lines and adjacent two data lines, be defined as a viewing area (being photic zone), and data line forms and electrically connects one of in above-mentioned source electrode and adjacent two data lines; The insulation course of etching photic zone is till expose etch stop layer, to increase the light penetration of photic zone; Form a protective seam, be covered in the top of those gate lines and those data lines, and this protective seam of at least a portion is contacted with the surface of this etch stop layer of this viewing area; Form a pixel electrode on photic zone, and this pixel electrode forms electric connection with drain electrode.
The present invention still provides a kind of method for making of LCD, comprising: one first substrate is provided, is formed with an etch stop layer on it; Form one source pole-drain region on this transparent etch stop layer; Form an insulation course on above-mentioned transparent etch stop layer; Be provided with a plurality of be parallel to each other and towards the gate line of horizontal expansion on above-mentioned insulation course, and definition has at least one viewing area (photic zone) between each gate line; The insulation course of this photic zone of etching is till expose this etch stop layer, to increase the light penetration of photic zone; Be provided with a plurality of be parallel to each other and towards the data line of longitudinal extension on above-mentioned insulation course, it avoids the position of above-mentioned photic zone, intersects vertically with above-mentioned gate line, and forms with this source electrode and to electrically connect; Form a protective seam, be covered in the top of those gate lines and those data lines, and this protective seam of at least a portion is contacted with the surface of this etch stop layer of this viewing area; Form a pixel electrode on this photic zone, and this pixel electrode and this drain electrode formation electric connection; One second substrate is provided, and it is arranged at the top of corresponding first substrate; Fit first substrate and second substrate; And the perfusion liquid crystal is between above-mentioned two substrates.
According to the present invention, above-mentioned etch stop layer is preferably transparent material, and its material and indefinite can be tin indium oxide (ITO) or indium zinc oxide (IZO).
According to the present invention, aforesaid substrate can be glass or quartz; Pixel electrode layer can be tin indium oxide or indium zinc oxide.
According to the present invention, above-mentioned LCD can more comprise a grid, and the gate line in its adjacent two gate lines with this links to each other, in order to drive this source electrode-drain region.
According to the present invention, the source electrode in the method for making of above-mentioned LCD can be via a contact hole of passing insulation course form to electrically connect with a data line in adjacent two data lines; Pixel electrode can form electric connection with drain electrode via another contact hole of passing insulation course.In addition, the insulation course step of etching photic zone below can be carried out in the above-mentioned contact of etching hole, need not increase extra step when also promptly removing photic zone below insulation course, also can not increase production cost.
Description of drawings
Fig. 1 shows the fragmentary cross-sectional view of a TFT multiple substrate.
Fig. 2 A～2D shows the initiatively sectional view of multiple substrate making flow process of present embodiment TFT-LCD.
Fig. 2 E shows the initiatively top view of multiple substrate of present embodiment TFT-LCD.
Fig. 2 F shows the sectional view of present embodiment LCD.
The figure number explanation
1,101,400 substrates, 2 etch stop layers, 3 cushions
4 polysilicon layers, 5 presumptive areas, 6 transistor area
7 viewing areas, 10,107 gate insulators, 12,108 grids
14,104 channel regions, 16,102 source areas, 500 liquid crystal
7,103 drain regions, 18,112 interlayer insulating films
20,122 source electrodes, 22,123 drain electrodes
26,130 protective seams, 28,105 pixel electrodes
200,201 gate lines, 300,301 data lines
18a, 18b, 26a, 110,111,130a contact the hole
Embodiment
Fig. 2 A～2D shows the sectional view of the TFT-LCD active multiple substrate making flow process of present embodiment, and Fig. 2 E is the top view of the TFT-LCD active multiple substrate of present embodiment.
At first, shown in Fig. 2 A, provide as being a substrate 1 of glass, form an etch stop layer 2 thereon, its material for example is transparent tin indium oxide.Then form a cushion 3 on etch stop layer 2, its material for example is SiO
2Afterwards, on cushion 3, form a polysilicon layer 4 (polysiliconlayer).
Then, shown in Fig. 2 B, polysilicon layer 4 is bestowed implanting ions, the source area 16, the drain region 17 that polysilicon layer 4 are had be mixed with impurity, and not doping channel region 14.Afterwards, above substrate 1, form a gate insulator 10 and a grid 12 in regular turn.Afterwards, form interbedded insulating layer 18 on substrate 1.Wherein gate insulator 10 for example is SiN with the material of interlayer insulating film 18
xOr SiO
2
Then shown in Fig. 2 C, etching is corresponding to the gate insulator 10 and interlayer insulating film 18 of source area 16,17 tops, drain region, to form contact hole 18a and 18b.Simultaneously, the gate insulator 10, cushion 3 that etching is located at presumptive area 5 and interlayer insulating film 18 are till the surface that exposes etch stop layer 2, to reduce the thickness of presumptive area 5 top insulation courses.
Wherein, owing to increase by an etch stop layer 2 among the present invention on substrate 1, therefore can be by adjusting the required etching period of contact hole 18a, 18b, the gate insulator 10 and interlayer insulating film 18 that is positioned at presumptive area 5 removed in etching simultaneously, till the surface of exposing etch stop layer 2.This step has improves the not good effect of substrate that etching causes 1 homogeneity, thereby increase the tolerable degree (Processwindow) of technology, can reduce the probability that is reflected because of gate insulator 10 and interlayer insulating film 18 influences in presumptive area 5 backlight simultaneously.In addition, because etching solution is lower for the etch-rate of polysilicon layer 4, therefore when etching contact hole 18a, 18b, polysilicon layer 4 can be played the part of the role of etch stop layer, therefore can not influence electrically because of increasing whole etching period.
Then, shown in Fig. 2 D, earlier deposition one conductor layer (not drawing) carries out the lithography step then and removes this conductor layer partly and form the data line 300 of longitudinal extension and source electrode 20, drain electrode 22 on interlayer insulating film 18.Afterwards, form a protective seam 26 and be covered on source electrode 20, drain electrode 22 and the etch stop layer 2, and on protective seam 26, form a contact hole 26a.The material of this protective seam for example is a photoresistance.Then, form a pixel electrode 28, form electric connection via contact hole 26a with drain electrode 22 simultaneously in protective seam 26 tops.
Fig. 2 E is the initiatively top view of multiple substrate of present embodiment TFT-LCD, shown in Fig. 2 E, is formed with source area 16 and drain region 17 on substrate 1; Gate line 200,201 that is parallel to each other and the data line 300,301 that is parallel to each other are arranged on the aforesaid substrate 1, wherein gate line 200,201 and data line 300,301 intersect vertically, have a viewing area 7 (being photic zone) therebetween, and source electrode 16 forms electric connection with data line 300.
Then, as process for manufacturing liquid crystal display, carry out initiatively aiming at and the applying step of multiple substrate 1 of colored filter substrate 400 and TFT-LCD.At last, again in paste and after LCD in perfusion liquid crystal 500, promptly finish the LCD of present embodiment after sealing, shown in Fig. 2 F.
A kind of liquid crystal display device structure of present embodiment (please refer to Fig. 2 F) comprises a substrate 1, one etch stop layer 2 and is formed on the substrate 1; One thin film transistor (TFT) is formed at etch stop layer 2 tops of transistor area 6; One protective seam 26 is covered in thin film transistor (TFT) and is arranged on the etch stop layer 2 of viewing area 7; One pixel electrode 28 is formed at the part surface of protective seam 26, and forms electric connection via contact hole 26a and drain electrode 22; One colored filter substrate 400 is arranged at the top of corresponding substrate 1; And liquid crystal layer 500 is sandwiched between above-mentioned colored filter substrate 400 and the substrate 1.
As above-mentioned, the structure of LCD of the present invention and method for making, it utilizes etch stop layer control etched depth, makes etch process be easy to control, avoids not causing the etched back of glass substrate to form uneven surface because of etched homogeneity is good.The contrast that has alleviated the Newton ring light intensity by the insulation course etching of photic zone is removed makes Newton ring more not obvious, increases penetrance backlight simultaneously, makes LCD utilization factor to light under the pattern of penetrating promote, and then reaches the display effect of high brightness.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (10)
1, a kind of LCD has a upper substrate, a liquid crystal layer and an infrabasal plate, it is characterized in that this display comprises at least:
One etch stop layer is formed at this infrabasal plate top;
One source pole-drain region is formed at this etch stop layer top;
One gate insulator covers above-mentioned etch stop layer, and exposes etch stop layer in the viewing area;
The data line that the gate line that a plurality of are parallel to each other and a plurality of are parallel to each other is arranged at this gate insulator top, and defines a viewing area between adjacent two these gate lines and adjacent two these data lines; And
One protective seam be covered in the top of those gate lines and those data lines, and this protective seam at least a portion is contacted with the top surface of this etch stop layer of this viewing area.
2, LCD as claimed in claim 1 is characterized in that, this etch stop layer is a transparent material, and this transparent material comprises tin indium oxide or indium zinc oxide.
3, LCD as claimed in claim 1 is characterized in that, this display more includes a pixel electrode layer, is formed at this protective seam top.
4, a kind of transistor array substrate of LCD is characterized in that, comprising:
One substrate, definition has a transistor area and a viewing area on this substrate;
One etch stop layer is formed at this substrate top;
One transistor is arranged at this etch stop layer top of this transistor area, and this transistor comprises gate insulator, and this gate insulator exposes etch stop layer in the viewing area;
One protective seam is covered on the transistor and viewing area of transistor area, and this protective seam at least a portion is contacted with the top surface of this etch stop layer of this viewing area; And
One pixel electrode is formed on this protective seam, and forms electric connection with this transistor.
5, the transistor array substrate of LCD as claimed in claim 4 is characterized in that, this etch stop layer is tin indium oxide or indium zinc oxide.
6, a kind of method for making of transistor array substrate of LCD is characterized in that, comprising:
One substrate is provided, is formed with an etch stop layer on it;
Form one source pole-drain region in this etch stop layer top;
Form an insulation course in this source electrode-top, drain region;
A plurality of gate lines that are parallel to each other and a plurality of data lines that is parallel to each other are set on this insulation course, and between adjacent two gate lines and adjacent two data lines, are defined as a viewing area;
This insulation course that this viewing area is removed in etching is till the surface of exposing this etch stop layer; And
Form a protective seam, be covered in the top of those gate lines and those data lines, and this protective seam of at least a portion is contacted with the surface of this etch stop layer of this viewing area.
7, the transistor array substrate method for making of LCD as claimed in claim 6 is characterized in that, this etch stop layer is a transparent material, and this transparent material comprises tin indium oxide or indium zinc oxide.
8, the transistor array substrate method for making of LCD as claimed in claim 6 is characterized in that, more comprise forming a pixel electrode layer in this top, viewing area, and this pixel electrode and this drain electrode formation electric connection.
9, a kind of method for making of LCD comprises:
One first substrate is provided, is formed with an etch stop layer on it;
Form one source pole-drain region on this etch stop layer;
Form an insulation course on this etch stop layer;
A plurality of gate lines are set on this insulation course, and respectively between this gate line definition at least one viewing area arranged;
This insulation course of this viewing area of etching is till the surface that exposes this etch stop layer;
A plurality of data lines are set on this insulation course;
Form a protective seam, be covered in the top of those gate lines and those data lines, and this protective seam of at least a portion is contacted with the surface of this etch stop layer of this viewing area;
Form a pixel electrode on this viewing area, and this pixel electrode and this drain electrode formation electric connection;
One second substrate is provided, and its setting corresponds to this first substrate top;
Fit this first substrate and this second substrate; And
The perfusion liquid crystal is between this two substrates.
10, the method for making of LCD as claimed in claim 9 is characterized in that, this etch stop layer is tin indium oxide or indium zinc oxide.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100009924A CN100353244C (en) | 2004-01-17 | 2004-01-17 | Liquid crystal display device, and its manufacturing method anbd transistor array substrate and manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100009924A CN100353244C (en) | 2004-01-17 | 2004-01-17 | Liquid crystal display device, and its manufacturing method anbd transistor array substrate and manufacturing method |
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| CN1641450A CN1641450A (en) | 2005-07-20 |
| CN100353244C true CN100353244C (en) | 2007-12-05 |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569416A (en) * | 2012-02-15 | 2012-07-11 | 华映光电股份有限公司 | Thin film transistor, thin film transistor substrate and production method thereof |
| CN106298950B (en) * | 2015-04-14 | 2019-06-18 | 鸿富锦精密工业（深圳）有限公司 | Thin film transistor (TFT) and its manufacturing method |
| CN107315292A (en) * | 2016-04-26 | 2017-11-03 | 群创光电股份有限公司 | Display panel and its manufacture method |
| CN106707639B (en) * | 2016-12-20 | 2021-01-22 | 厦门天马微电子有限公司 | Array substrate, display panel and array substrate manufacturing method |
| CN106707638B (en) * | 2016-12-20 | 2020-08-11 | 厦门天马微电子有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN106972033B (en) * | 2017-05-25 | 2021-02-19 | 厦门天马微电子有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
| CN109119762B (en) * | 2017-06-22 | 2021-10-22 | 群创光电股份有限公司 | Microwave device capable of modulating |
| CN107436518A (en) * | 2017-08-31 | 2017-12-05 | 厦门天马微电子有限公司 | A kind of array base palte, display panel, display device and HUD display systems |
| CN107910355A (en) * | 2017-11-27 | 2018-04-13 | 信利（惠州）智能显示有限公司 | Array base palte and preparation method thereof and organic electroluminescence display device and method of manufacturing same |
| CN109003991A (en) | 2018-08-01 | 2018-12-14 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof and display panel |
| CN109659319B (en) * | 2018-12-10 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| US20240103328A1 (en) * | 2021-06-29 | 2024-03-28 | Boe Technology Group Co., Ltd. | Displaying base plate and manufacturing method thereof, and displaying device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10177968A (en) * | 1996-12-18 | 1998-06-30 | Toshiba Corp | Thin film device, forming method thereof, and manufacturing method of this film transistor and liquid crystal display device |
| US20020109797A1 (en) * | 2001-02-12 | 2002-08-15 | Woo-Suk Chung | TFT LCD device having multi-layered pixel electrodes |
-
2004
- 2004-01-17 CN CNB2004100009924A patent/CN100353244C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10177968A (en) * | 1996-12-18 | 1998-06-30 | Toshiba Corp | Thin film device, forming method thereof, and manufacturing method of this film transistor and liquid crystal display device |
| US20020109797A1 (en) * | 2001-02-12 | 2002-08-15 | Woo-Suk Chung | TFT LCD device having multi-layered pixel electrodes |
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