CN100341214C - Method for preparing InGaAs/InGaAsP quantum well laser with long wavelength and big strain - Google Patents
Method for preparing InGaAs/InGaAsP quantum well laser with long wavelength and big strain Download PDFInfo
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- CN100341214C CN100341214C CNB2005100591892A CN200510059189A CN100341214C CN 100341214 C CN100341214 C CN 100341214C CN B2005100591892 A CNB2005100591892 A CN B2005100591892A CN 200510059189 A CN200510059189 A CN 200510059189A CN 100341214 C CN100341214 C CN 100341214C
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Abstract
The present invention relates to a method for preparing long-wavelength large-strain indium-gallium-arsenic/indium-gallium-arsenic-phosphor quantum well laser. The present invention comprises the following steps: step 1, an indium phosphide buffer layer epitaxially grows on an n-type indium phosphide substrate; step 2, a silicon dioxide layer which is photoetched to prepare two bar-shaped mask patterns grows on the indium phosphide buffer layer by a PECVD method; step 3, a laser structure epitaxially grows on the indium phosphide buffer layer by an MOCVD method; step 4, a bragg grating is prepared on the laser structure; step 5, the bragg grating externally extends a limiting layer and a contact layer twice; step 6: a ridge-shaped waveguide is formed by photoetching; step 7, silicon dioxide layers grow on both sides and the upper side of the ridge-shaped waveguide and the surface of the laser structure; step 8, the silicon dioxide layer at the upper side of the ridge-shaped waveguide is etched off to form an electrode window; step 9, the whole upper surface of the device is sputtered with titan/platinum/aurum; step 10, the back side is thinned, and an n-side electrode of aurum/germanium/nickel is evaporated to complete the preparation of the device.
Description
Technical field
The present invention relates to a kind of with big strain indium gallium arsenic/InGaAsP (InGaAs/InGaAsP) quantum-well laser of metal-organic chemical vapor deposition equipment method selective epitaxy growth long wavelength (1.6-2.0 micron).
Background technology
Along with the enhancing of people's environmental consciousness, the input of environmental protection cause is constantly increased.Owing to be subjected to the influence of pollutant sources such as vehicle exhaust, the nitrogen oxide in the urban atmosphere, carbon monoxide (CO) content are higher, and the content of monitoring these pollutants is an important link to control atmosphere pollution.Gas in the mining (methane) blast threatens workman's life security, and the instrument that can monitor methane concentration constantly is self-evident to the importance of mining.
Traditional method according to gas molecule quality analysis gas content owing to reasons such as its analysis precision and costs, and can not be applicable to day by day high accuracy widely, application such as monitoring constantly.The gas molecule optical absorption spectra is just as the mankind's fingerprint, and the absorption spectrum that utilizes gas molecule is the effective means that gaseous species identification and gas molecular concentration are measured.The spectrum gas sensing is to have utilized wave-length coverage to absorb characteristic spectrum in the molecular vibration/rotation of the gas with various of 1-20 μ m.LASER Light Source generally adopts the gas laser or the tunable lead salt laser of fixed frequency.The morning that the research that relevant tunable lead salt laser is used for the minimum gas sensing is carried out, can obtain good gas-selectively and very high detection sensitivity.Yet this laser costs an arm and a leg, spectral line of emission multimode, and power output is relatively low, the structure heaviness, and need work in low temperature environment.These factors have seriously restricted its extensive use in gas sensing.
Methane, hydrogen chloride, hydrogen bromide, carbon monoxide, carbon dioxide, nitrogen oxide (CH
4, HCl, HBr, CO, CO
2, NOx) stronger absworption peak is arranged in the 1.6-2.0 micron waveband, so the laser sensor of these gases needs the single-mode laser of 1.6-2.0 micron waveband.This requires to introduce big stress in the active layer domestic demand, and needs to strengthen the width of quantum well, and this causes lattice generation relaxation easily, and crystal mass descends.And the InGaAs trap material of big strain is because In content height need low-temperature epitaxy, but barrier material and limiting layer material InGaAsP need grow under higher temperature.And so need to optimize the growth conditions of metal organic chemical vapor deposition growth method.
The InGaAs active layer need be grown under lower temperature, forms " island " of rich indium to prevent the phosphide atom migration.But lower growth temperature but causes relatively poor crystal mass, and laser performance is very poor.
Adopt selective epitaxy method (SAG) the growth long wave strain InGaAs/InGaAsP quantum-well laser of growing up to overcome the above problems.Use trimethyl gallium (TMGa), trimethyl indium (TMIn), and arsine (AsH
3) growth InGaAs, Ga and In are at H
2Diffusion coefficient in the carrier gas is decided by the size of collision cross section between the quality of particle itself and particle and the carrier gas particle, and Ga and In are at H
2Diffusion coefficient in the carrier gas is basic identical.But Ga and In but have very big difference, K at the rate of adsorption K of substrate surface unit's lysate concentration
Ga/ K
In≈ 0.14, and the difference of the particle rate of adsorption causes in selecting the vitellarium rich In because from the mask by diffuse laterally into select the vitellarium easier absorption of In source reflect nucleation by substrate.During therefore with selective epitaxy method (SAG) growth InGaAs active area, by optimizing growth temperature, growth pressure, V/III, conditions such as mask width improve selects In components contents in the vitellarium, has avoided the reduction growth temperature to improve In components contents in the InGaAs active area like this.Be that other growth conditionss do not change, just can increase the wavelength of laser.
Summary of the invention
The objective of the invention is to, a kind of grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave for preparing is provided, can improve and select In components contents in the district; Under all immovable situation of other growth conditionss, can increase the wavelength of laser.By the optimization growth temperature, growth pressure, V/III, conditions such as mask width improve selects In components contents in the vitellarium, has avoided the reduction growth temperature to improve In components contents in the InGaAs active area like this.
The present invention is a kind of to prepare the grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave, it is characterized in that, comprises the steps:
Step 1: epitaxial growth indium phosphide resilient coating on n type indium phosphide substrate;
Step 2: adopt PECVD method growthing silica layer on the indium phosphide resilient coating, the mask graph of two bar shapeds is prepared in photoetching;
Step 3: adopt mocvd method epitaxial growth laser structure on the indium phosphide resilient coating;
Step 4: on laser structure, prepare Bragg grating;
Step 5: secondary epitaxy light limiting layer and contact layer on Bragg grating;
Step 6: photoetching forms ridge waveguide;
Step 7: the both sides of ridge waveguide and above with the superficial growth silicon dioxide layer of laser structure;
Step 8: erode the silicon dioxide layer above the ridge waveguide, form electrode window through ray;
Step 9: at the entire upper surface sputtered titanium/platinum/gold of device;
Step 10: thinning back side, evaporated gold/germanium/nickel n face electrode is finished the making of device.
Wherein laser structure comprises: lower waveguide layer, Multiple Quantum Well and last ducting layer.
Wherein the width of the mask graph of two bar shapeds is the 10-30 micron, and two bar shaped mask graph interstitial growth sector widths are the 10-15 micron.
Wherein the structure of Multiple Quantum Well comprises: replace the compressive strain indium gallium arsenic material and the tensile strain InGaAsP material of stack, the thickness of this compressive strain indium gallium arsenic material is 10nm, and band gap wavelength is the 1.6-2.0 micron; The thickness of this tensile strain InGaAsP material is 15nm, and band gap wavelength is 1.25 microns.
Wherein the growth temperature of Multiple Quantum Well is the 620-655 degree, and growth pressure is the 20-60 millibar.
Characteristics of the present invention are:
During 1, with metal-organic chemical vapor deposition equipment method selective epitaxy method (SAG) growth InGaAs active area, can improve and select In components contents in the district.Under all immovable situation of other growth conditionss, can increase the wavelength of laser.
2, by the optimization growth temperature, growth pressure, V/III, conditions such as mask width improve selects In components contents in the vitellarium, has avoided the reduction growth temperature to improve In components contents in the InGaAs active area like this.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the structural representation behind extension indium phosphide resilient coating on the substrate;
Fig. 2 is the structural representation that makes by lithography behind the mask pattern;
Fig. 3 is the structural representation behind the epitaxial growth laser structure;
Fig. 4 is the structural representation after removing mask pattern and etching Bragg grating;
Fig. 5 is the structural representation behind extension light limiting layer, the contact layer;
Fig. 6 is the structural representation that makes by lithography behind the ridge waveguide;
Fig. 7 is the structural representation that cuts out behind the ridge waveguide window;
Fig. 8 is the structural representation of entire device.
Embodiment
See also Fig. 1 to Fig. 8, the present invention is a kind of to prepare the grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave, comprises the steps:
1, epitaxial growth indium phosphide resilient coating 2 on n type indium phosphide substrate 1;
2, adopt PECVD method growthing silica layer on indium phosphide resilient coating 2, the mask graph 3 of two bar shapeds is prepared in photoetching, and the width of the mask graph 3 of this two bar shaped is the 10-30 micron, and two bar shaped mask graphs, 3 interstitial growth sector widths are the 10-15 micron;
3, adopt mocvd method epitaxial growth laser structure 100 on indium phosphide resilient coating 2, this laser structure 100 comprises: lower waveguide layer 4, Multiple Quantum Well 5 and last ducting layer 6, wherein the structure of Multiple Quantum Well 5 comprises: the compressive strain indium gallium arsenic material and the tensile strain InGaAsP material that replace stack, the thickness of this compressive strain indium gallium arsenic material is 10nm, and band gap wavelength is the 1.6-2.0 micron; The thickness of this tensile strain InGaAsP material is 15nm, and band gap wavelength is 1.25 microns; The growth temperature of this Multiple Quantum Well 5 is the 620-655 degree, and growth pressure is the 20-60 millibar;
4, preparation Bragg grating 7 on laser structure 100;
5, secondary epitaxy light limiting layer 8 and contact layer 9 on Bragg grating 7;
6, photoetching forms ridge waveguide;
7, the both sides of ridge waveguide and above and the superficial growth silicon dioxide layer 10 of laser structure 100;
8, erode silicon dioxide layer above the ridge waveguide, form electrode window through ray;
9, at the entire upper surface sputtered titanium/platinum/gold 11 of device;
10, thinning back side, evaporated gold/germanium/nickel n face electrode 12 is finished the making of device.
Embodiment
Please consult Fig. 1 to Fig. 8 again, the present invention is a kind of to prepare the grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave, comprises the steps:
1. the InP resilient coating 2 that epitaxial growth Si mixes on the n type InP substrate 1 that cleans up.Thickness is the 1-2 micron, and doping content is 2 * 10
18, see Fig. 1.
2. be the SiO of 0.2～0.3 μ m at epitaxial wafer surface heat oxidation deposit one layer thickness
2Masking layer, then, mask lithography goes out SAG mask pattern structure 3 as shown in Figure 2, wherein SiO
2The width of mask regions is the 10-30 micron, and the interstitial growth sector width is the 10-15 micron.
3. epitaxial wafer is through cleaning back growth laser structure 100 in MOCVD.As shown in Figure 3, structure is followed successively by from bottom to top: the InGaAsP of 100nm (InGaAsP) lower waveguide layer 4, and band gap wavelength is 1.3 microns; 3-5 layer Multiple Quantum Well 5, trap material are compressive strain indium gallium arsenic (InGaAs), and thickness is 10nm, and band gap wavelength is the 1.6-2.0 micron, and barrier material is tensile strain InGaAsP (InGaAsP), and thickness is 15nm, and band gap wavelength is 1.25 microns; The InGaAsP of 100nm (InGaAsP) is gone up ducting layer 6, and band gap wavelength is 1.3 microns.Growth temperature is the 620-655 degree, and growth pressure is the 20-60 millibar.
4. SiO is removed in corrosion
2Mask graph; Adopt holographic exposure, dry method and wet etching to combine, scribe one-level Bragg grating at last ducting layer, the cycle is 250nm-320nm, the Bragg grating 7 that cuts out, as shown in Figure 4.
5. after the epitaxial wafer clean, secondary epitaxy grow light limiting layer and electric contacting layer, the growth order of each layer is as shown in Figure 5.Light limiting layer 8 is the InP material, and thickness is 1～3 micron, and contact layer 9 is indium gallium arsenic (InGaAs) material, thickness 0.1～0.5 μ m, and the p type mixes, and doping content is 8 * 10
18
6. the photoetching wet etching prepares ridge waveguide, and bar is wide to be 3 microns, and ridge is the 1-3 micron deeply, sees Fig. 6.
7. large tracts of land thermal oxidation deposit dielectric insulating film SiO
2L0 then, adopts self-registered technology to cut out the ridge waveguide window and sees Fig. 7.
8. sputtered titanium/platinum/gold (Ti/Pt/Au) 11, thickness is that 0.1～0.5 μ m is thick, chip thinning is to about the 100 μ m, and evaporated gold/germanium/nickel (Au/Ge/Ni) n face electrode 12 overleaf, sees Fig. 8, finishes entire device.
During with metal-organic chemical vapor deposition equipment method selective epitaxy (SAG) growth InGaAs active area, can improve and select In components contents in the district.Under all immovable situation of other growth conditionss, can increase the wavelength of laser.By optimization mask width, growth temperature, growth pressure, V/III obtains high-quality big strain indium gallium arsenic/InGaAsP quantum-well laser etc. condition.
Claims (5)
1. one kind prepares the grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave, it is characterized in that, comprises the steps:
Step 1: epitaxial growth indium phosphide resilient coating on n type indium phosphide substrate;
Step 2: adopt PECVD method growthing silica layer on the indium phosphide resilient coating, the mask graph of two bar shapeds is prepared in photoetching;
Step 3: adopt mocvd method epitaxial growth laser structure on the indium phosphide resilient coating;
Step 4: on laser structure, prepare Bragg grating;
Step 5: secondary epitaxy light limiting layer and contact layer on Bragg grating;
Step 6: photoetching forms ridge waveguide;
Step 7: the both sides of ridge waveguide and above with the superficial growth silicon dioxide layer of laser structure;
Step 8: erode the silicon dioxide layer above the ridge waveguide, form electrode window through ray;
Step 9: at the entire upper surface sputtered titanium/platinum/gold of device;
Step 10: thinning back side, evaporated gold/germanium/nickel n face electrode is finished the making of device.
2. the grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave for preparing according to claim 1 is characterized in that wherein laser structure comprises: lower waveguide layer, Multiple Quantum Well and last ducting layer.
3. the grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave for preparing according to claim 1, it is characterized in that, wherein the width of the mask graph of two bar shapeds is the 10-30 micron, and two bar shaped mask graph interstitial growth sector widths are the 10-15 micron.
4. the grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave for preparing according to claim 2, it is characterized in that, wherein the structure of Multiple Quantum Well comprises: the compressive strain indium gallium arsenic material and the tensile strain InGaAsP material that replace stack, the thickness of this compressive strain indium gallium arsenic material is 10nm, and band gap wavelength is the 1.6-2.0 micron; The thickness of this tensile strain InGaAsP material is 15nm, and band gap wavelength is 1.25 microns.
5. the grow up method of strain indium gallium arsenic/InGaAsP quantum-well laser of long wave for preparing according to claim 2 is characterized in that wherein the growth temperature of Multiple Quantum Well is the 620-655 degree, and growth pressure is the 20-60 millibar.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100591892A CN100341214C (en) | 2005-03-24 | 2005-03-24 | Method for preparing InGaAs/InGaAsP quantum well laser with long wavelength and big strain |
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|---|---|---|---|
| CNB2005100591892A CN100341214C (en) | 2005-03-24 | 2005-03-24 | Method for preparing InGaAs/InGaAsP quantum well laser with long wavelength and big strain |
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| CN1838493A CN1838493A (en) | 2006-09-27 |
| CN100341214C true CN100341214C (en) | 2007-10-03 |
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| CN102142658B (en) * | 2011-02-28 | 2012-10-31 | 北京航星网讯技术股份有限公司 | Method for manufacturing laser chip for natural gas detection |
| CN108493768A (en) * | 2018-04-10 | 2018-09-04 | 中国科学院半导体研究所 | The preparation method of ridge waveguide structure laser P-type electrode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297476A (en) * | 1994-04-21 | 1995-11-10 | Hitachi Ltd | Semiconductor laser device |
| CN1426143A (en) * | 2001-12-10 | 2003-06-25 | 中国科学院半导体研究所 | Method for mixing organic gallium source selective zone growing indium-gallium-arsenic-phosphor multiple quantum well |
| US6611544B1 (en) * | 2000-04-11 | 2003-08-26 | E20 Communications, Inc. | Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers |
| CN1452285A (en) * | 2002-01-28 | 2003-10-29 | 夏普公司 | Semiconductor laser device |
| CN1492550A (en) * | 2002-10-25 | 2004-04-28 | 中国科学院半导体研究所 | Method for producing adjustable wave length distribution Bragg reflective laser |
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- 2005-03-24 CN CNB2005100591892A patent/CN100341214C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297476A (en) * | 1994-04-21 | 1995-11-10 | Hitachi Ltd | Semiconductor laser device |
| US6611544B1 (en) * | 2000-04-11 | 2003-08-26 | E20 Communications, Inc. | Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers |
| CN1426143A (en) * | 2001-12-10 | 2003-06-25 | 中国科学院半导体研究所 | Method for mixing organic gallium source selective zone growing indium-gallium-arsenic-phosphor multiple quantum well |
| CN1452285A (en) * | 2002-01-28 | 2003-10-29 | 夏普公司 | Semiconductor laser device |
| CN1492550A (en) * | 2002-10-25 | 2004-04-28 | 中国科学院半导体研究所 | Method for producing adjustable wave length distribution Bragg reflective laser |
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