CN100340696C - Sputtering apparatus - Google Patents
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- CN100340696C CN100340696C CNB2004100078125A CN200410007812A CN100340696C CN 100340696 C CN100340696 C CN 100340696C CN B2004100078125 A CNB2004100078125 A CN B2004100078125A CN 200410007812 A CN200410007812 A CN 200410007812A CN 100340696 C CN100340696 C CN 100340696C
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Abstract
To obtain a titanium oxide thin film having high durability and photocatalytic function. Titanium oxide thin films 31 are made to exist at intervals on the surface of a barrier thin film 12, hydrophilic thin films 41 are formed between the titanium thin films to constitute a functional thin film 3. Since both parts to which the titanium oxide thin films 31 are exposed and parts to which the hydrophilic thin films 41 are exposed exist together on the surface of the functional thin film 31, functions of both the thin films can be obtained. Consequently a self cleaning effect and superhydrophilic nature are developed under an environment of irradiation with ultraviolet rays and a hydrophilicity of a certain degree is obtained even at a dark place. When a titanium oxide target in the titanium oxide thin films 31 is sputtered with a sputtering gas containing an oxygen gas, deficient oxygen in the titanium oxide thin film to be formed can be supplied with oxygen to form the titanium oxide thin films 31 having a photocatalytic function.
Description
The present patent application is that application number is the dividing an application of patent application of CN00101041.7 (applying date is on January 11st, 2000).
Technical field
The invention relates to the technical field of functional film, particularly about the applied technical field of functional film with photo-catalysis function.
Background technology
In recent years, as thin-film material, be titanium oxide (TiO with Superhydrophilic and anti-fouling effect
2) utmost point paid close attention to.
Well-known titanium oxide is a kind of of photocatalyst, when being subjected to uviolizing, can be activated, make airborne oxygen generate hydroxyl free radical and superoxide anion, because they can decompose attached to lip-deep organic pollution materials, so have the self-stip effect, in addition because the decomposition of pollution substance, and expose peace and quiet surface, its result can obtain Superhydrophilic.
The dispersion liquid of titanium dioxide powder in spraying plating on the surface of this barrier film 112, burn till, form thin film of titanium oxide 113 (colloidal sol, gel method), from the teeth outwards, the photocatalysis thin film that formation is made of thin film of titanium oxide 113, by this layer thin film of titanium oxide 113, can obtain self-stip effect and Superhydrophilic.
In addition, barrier membranes 112 is for preventing the film of the diffusion of contaminants such as sodium in the substrate 111.When not forming barrier film 112, and when directly the spraying plating of titanium oxide dispersion liquid being formed thin film of titanium oxide 113 on substrate 111 surfaces, burn till in the process of thin film of titanium oxide, contained sodium becomes branch to be immersed in the thin film of titanium oxide 113 in the substrate 111, and generate the Ti-Na compound, thin film of titanium oxide 113 is lost activity.
Yet the crystal system of titanium oxide is shown Detitanium-ore-type, rutile-type and brookite type, and known Detitanium-ore-type can demonstrate the highest optical activity.Yet Detitanium-ore-type is exposed to high temperature following time and can be transformed into rutile-type, and the result becomes and do not show anti-fouling effect and Superhydrophilic.
When the general using sputtering method forms film,, thereby can not form the thin film of titanium oxide of Detitanium-ore-type because the film forming energy is excessive.And the occasion of vapour deposition method owing to need the film forming of limit heating at high temperature object limit to form film, is not suitable for forming film to glass baseplate surface.
To this, in above-mentioned sol-gel method, use the titanium dioxide powder of Detitanium-ore-type, owing under the low temperature about 800 ℃, burn till the formation film, thus do not produce crystal conversion, thus the thin film of titanium oxide of Detitanium-ore-type can be formed.
Yet, with the thin film of titanium oxide 113 of sol-gel method formation, because film strength is very poor, so the shortcoming of peeling off is easily arranged.
In recent years, the Superhydrophilic of thin film of titanium oxide receives publicity, and when being applied to mirror, even in the rainy day, identification is also fine, and can expect to obtain high-performance visor that has the self-stip function etc.Therefore, also more and more higher to the goodsization and the life requirement of the functional film that used thin film of titanium oxide.
Summary of the invention
The present invention is that its objective is provides a kind of weather resistance height, has the thin film of titanium oxide of photo-catalysis function for the undesirable situation that solves in the above-mentioned current techniques proposes.
In order to solve above-mentioned problem, the invention of record in the claim 1, be the functional film of a kind of possess hydrophilic property film and thin film of titanium oxide, it is characterized in that, mixing the part that part that hydrophilic film exposes and thin film of titanium oxide expose in the tiny area on the above-mentioned functions film surface.
The invention of record in the claim 2 is the functional film of record in the claim 1, it is characterized in that above-mentioned thin film of titanium oxide forms on above-mentioned hydrophilic film.
The invention of record in the claim 3, be to have glass substrate, form the functional base plate of thin film of titanium oxide at the barrier film that forms on this glass substrate with on this barrier film, it is characterized in that expose on the surface of some above-mentioned barrier film on the above-mentioned thin film of titanium oxide.
The invention of record in the claim 4, it is the functional base plate of record in the claim 3, it is characterized in that, in above-mentioned thin film of titanium oxide, dispose hydrophilic film, and in the tiny area on aforesaid substrate, the part that above-mentioned thin film of titanium oxide exposes is in the same place with the partial hybrid that above-mentioned hydrophilic film exposes.
The invention of record in the claim 5, it is functional base plate, it is characterized in that, this substrate comprises glass substrate, with the barrier film that on this glass substrate, forms, with thin film of titanium oxide that on this barrier film, forms and the hydrophilic film that on this thin film of titanium oxide, forms, and on above-mentioned glass substrate, mixing the part that part that above-mentioned hydrophilic film exposes and thin film of titanium oxide expose in the tiny area.
The invention of record in the claim 6, be that the film forming object is configured in the vacuum environment, utilize the plasma body of sputter gas, make the titanium oxide target carry out sputter, on the surface of above-mentioned film forming object, make the manufacture method of the thin film of titanium oxide of thin film of titanium oxide, it is characterized in that, in the above-mentioned sputter gas, as oxygen-containing gas, contain the wantonly gas more than a kind or 2 kinds in oxygen, ozone gas or the titanium dioxide nitrogen.
The invention of record in the claim 7 is the manufacture method of the thin film of titanium oxide of record in the claim 6, it is characterized in that the contained ratio of the above-mentioned oxygen-containing gas in above-mentioned sputter gas is more than 10 volume %.
The invention of record in the claim 8, be that film forming matter is configured in the vacuum environment, utilize the plasma body of sputter gas, make the titanium oxide target carry out sputter, on the surface of above-mentioned film forming object, make the manufacture method of the thin film of titanium oxide of thin film of titanium oxide, it is characterized in that this manufacture method is on one side to shine oxygen plasma on above-mentioned film forming object surface, Yi Bian form thin film of titanium oxide.
The invention of record in the claim 9, it is a kind of vacuum unit, the formation of this device is, comprise vacuum tank, with the turntable that is configured in the rotatable and lifting in the vacuum tank, and be configured in several film-forming components in the vacuum tank and cover dividing plate between this film-forming component, and the film forming object is configured on the above-mentioned turntable, when this turntable rotation and lifting, can between above-mentioned each film-forming component, transfer the film forming object.
The invention of record in the claim 10 is the vacuum unit of record in the claim 9, it is characterized in that in above-mentioned several film-forming components, having 1 film-forming component at least is with the sputter equipment of titanium oxide as target.
The invention of record in the claim 11 is the vacuum unit of record in the claim 10, it is characterized in that in above-mentioned several film-forming components, having 1 film-forming component at least is with the sputter equipment of Si oxide as target.
The invention of record in the claim 12, be a kind of have vacuum tank and target that is configured in the vacuum tank, film forming sputter equipment on sputtering target and the film forming matter surface in being transplanted on vacuum tank, it is characterized in that, in above-mentioned target and film forming object, dispose net, and can not form film in the net shadow part on film forming object surface.
The invention of record in the claim 13 is the sputter equipment of record in the claim 12, it is characterized in that, has used titanium oxide in above-mentioned target.
The invention of record in the claim 14 is the sputter equipment of record in the claim 12, it is characterized in that, has used Si oxide in above-mentioned target.
The invention of record in the claim 15 is the sputter equipment of record in the claim 12, it is characterized in that, is provided with to make the relative locating device that coincide with net of film forming object.
Functional film of the present invention constitutes as above, that is, hydrophilic film exposed portions serve and thin film of titanium oxide exposed portions serve mix existence in the lip-deep tiny area of functional film.For example, thin film of titanium oxide is scattered here and there with island in hydrophilic film, and on the contrary, hydrophilic film also can be scattered here and there with island in thin film of titanium oxide.Thin film of titanium oxide and hydrophilic film can can also be to be configured on the mesh position with net-like configuration also with the wire cross-over configuration on the other hand.
The functional film that the partial hybrid that expose on part that expose on the thin film of titanium oxide surface and hydrophilic film surface exists can form on the barrier film that forms on the glass substrate.Also the hydrophilic film filling can be dispersed in the middle of the thin film of titanium oxide, also the thin film of titanium oxide filling can be distributed in the middle of the hydrophilic film.In addition, also can on comprehensive film forming titanium oxide on the barrier film, form island dispersive hydrophilic film or wire or netted hydrophilic film.
Importantly, in the tiny area on functional film surface with thin film of titanium oxide surface and hydrophilic film surface mix exist for good.When tiny area is 1 square inch, preferably there is island thin film of titanium oxide about 100 to disperse thereon for well.
The thin film of titanium oxide that is provided with on above-mentioned functions film or functional base plate must have photo-catalysis function.Carrying out the sputter formation titanium oxide target period of the day from 11 p.m. to 1 a.m, in rare gas such as argon gas, add oxygen-containing gass such as oxygen, ozone gas or titanium dioxide nitrogen and form sputter gas, when utilizing this sputter gas plasma body that target is carried out sputter, can replenish and form damaged Sauerstoffatom in the thin film of titanium oxide, can obtain to have the anatase-type titanium oxide film of photo-catalysis function.
In order to obtain to have the thin film of titanium oxide of photo-catalysis function, the interpolation ratio of oxygen-containing gas is The more the better, must contain 10 volume % (rare gas: oxygen-containing gas=9: 1).When the ratio of rare gas such as argon gas diminishes, because sputtering rate is very low, so the upper limit of oxygen-containing gas is determined according to film forming speed.
In addition, in sputter, also can utilize ion gun etc. to substrate surface irradiation oxygen plasma, owing to can replenish damaged Sauerstoffatom, so can form thin film of titanium oxide with photo-catalysis function.
Description of drawings
Fig. 1 (a)～(d) is the functional film of the present invention's one example and the manufacture method explanatory view of functional base plate.
Fig. 2 (a) and (b): be other routine explanatory views.
Fig. 3 is an example that can form the film deposition system of functional film.
Fig. 4 is the explanatory view of thin film of titanium oxide formation method.
Fig. 5 is the explanatory view of screen plate configuration status.
Fig. 6 is the figure of expression contact angle.
Fig. 7 is the graph of a relation of expression ultraviolet irradiation time and contact angle θ.
Fig. 8 is the explanatory view of the functional film of old technology.
Among the figure:
2～4 functional films
5～7 functional base plates
11 glass substrates
12 barrier film or hydrophilic films
31,32 thin film of titanium oxide
41,42 hydrophilic films
Embodiment
The preferred embodiment of invention is described in down
Describe functional film of the present invention and functional base plate in detail, the manufacture method of thin film of titanium oxide of the present invention also is described simultaneously.
With reference to Fig. 3, symbol 9 is examples that form the film deposition system of functional film of the present invention.This film deposition system 9 has vacuum tank 54.Configuration turntable 59 on the bottom side in vacuum tank 54, the film-forming component 51～53 of sending parts 60 and the 1st～3rd is sent in the top configuration above it.
The substrate that symbol 11 expressions of Fig. 1 (a)～(d) are formed by cum calce soda glass.Be pre-formed reflectance coating 18 at the back side of glass substrate 11.
Use above-mentioned film deposition system 9, when forming functional film, make formation vacuum environments in the vacuum tank 54 with not shown vacuum pump in advance, and keep this environment and remain untouched, again substrate 11 is sent to send and send in the parts 50.Restart turntable 59, substrate 11 is sent in the 1st film-forming component 51.
The 1st film-forming component 51 is sputter equipments, the target that configuration is made by Si oxide, and this target of sputter makes the barrier film 12 (Fig. 1 (b)) that is formed by Si oxide carry out comprehensive film forming on the surface of substrate 11.
Then, start turntable 59, this substrate 11 is moved to the 2nd film-forming component 52 places.The 2nd film-forming component 52 also is a sputter equipment, and its structural models as shown in Figure 4.
This film-forming component 52 has dividing plate 71, at top side configuration negative electrode 72, the target 73 that configuration is made by titanium oxide on the bottom side of negative electrode 72.The substrate of sending into 11 makes its surperficial barrier film 12 towards target 73 1 sides, is configured in the dividing plate 71.
In this dividing plate 71, configurating filtered plate 75 between target 73 and the substrate 11.Their mutual alignment has been shown among Fig. 5.
After sending into substrate 11, make the environment of environment in vacuum tank 54 in the 2nd film-forming component 52 independently, feed argon gas and oxygen herein with the ratio (be 1: 1, promptly oxygenous ratio is 50 volume %) of regulation, with pressure-stabilisation 3.0 * 10
-2Torr (1 torr is about 133pa), anticathode 72 applies voltage.
As a result,, generate the sputter gas plasma body of forming by argon gas and oxygen, make target 73 can carry out sputter at target 73 near surfaces.
When go up on barrier film 12 surfaces that the sputtering particle (titanium oxide) that is flown out by target 73 surfaces arrives substrate 11, form thin film of titanium oxide thereon.
When utilizing sputtering method to form thin film of titanium oxide, if contain oxygen-containing gas in sputter gas, formed thin film of titanium oxide can form Detitanium-ore-type.In addition, the pressure of sputter environment has confidential relation to the crystallization pattern.
The pressure of sputter environment when thin film of titanium oxide forms and the character of the titanium film that forms have been shown in the following table.
Table 1 TiO
2Sputtering condition
| Pressure during film forming (torr) (Ar: O 2＝1∶1) | Contact angle θ () behind the uviolizing 18h |
| 3.0×10 -3 | × |
| 1.0×10 -2 | △ |
| 2.0×10 -2 | ○ |
| 3.0×10 -2 | ○ |
Below zero: 10 °
△: between 10～20 °
*: more than 20 °
Contact angle θ is the ultraviolet ray of pointing to the irradiation specified time on comprehensive film forming thin film of titanium oxide surface on the glass baseplate surface, the angle that glass substrate when being loaded with water droplet and water droplet surface form.Contact angle θ is shown in Fig. 6, and symbol 60 is glass substrates, and symbol 61 is water droplets.
According to table 1 as can be known, 2.0 * 10
-2Under the pressure more than the torr, the contact angle θ of formation can think to have Superhydrophilic below 10 °.Therefore, 2.0 * 10
-2Under the above pressure, can form the thin film of titanium oxide of Detitanium-ore-type.
When graphic representation shown in Figure 7 is expression acquisition Superhydrophilic, the graph of a relation of ultraviolet irradiation time and contact angle θ.As seen from the figure, irradiation can obtain Superhydrophilic in about 40～60 minutes.
But, 1.0 * 10
-2The contact angle of the thin film of titanium oxide that torr pressure obtains down, enough in actual applications, can think 5.0 * 10
-3The thin film of titanium oxide that the above pressure of torr forms down just can use.The upper limit is the pressure that does not produce arc discharge in sputter, is 5.0 * 10
-2About torr.
Yet, in the 2nd above-mentioned film-forming component 52, owing between target 73 and substrate 11, disposed screen plate 75, so the sputtering particle that is flown out by target 73 is during by screen plate 75, a part has only the sputtering particle by mesh 76 just to reach on barrier film 12 surfaces attached on the shield component 76.Therefore, the thin film of titanium oxide that uses screen plate 75 to form on barrier membranes 12 surfaces is cancellous.Symbol 31 these cancellous thin film of titanium oxide of expression of Fig. 1 (c) are dispersed on barrier film 12 surfaces regularly.
After forming cancellous thin film of titanium oxide 31, from film deposition system 9, take out substrate 11, when making visor, under the environment of irradiation ultraviolet radiation on thin film of titanium oxide 31 surfaces, by the self-stip function of thin film of titanium oxide 31, it is peace and quiet to carry out the surface, can see the effect of Superhydrophilic.In this state, even the attached water film is also expanded from the teeth outwards, can not generate water droplet yet.
Because in thin film of titanium oxide 31, exposed the surface of hydrophilic barrier film 12, so, even under the environment of irradiation ultraviolet radiation not, also can guarantee wetting ability to a certain degree.
Therefore, the functional film 2 that is made of cancellous thin film of titanium oxide 31 and barrier film 12 is no matter have or not all possess hydrophilic properties of uviolizing.Symbol 5 expressions have the functional base plate of this functional film 2.
Here, will from film deposition system 9, not take out by this substrate 11, can further send in the 3rd film-forming component 53.
This film-forming component 53 is sputter equipments, and portion is provided with target of being made by Si oxide and the screen plate of being made by above-mentioned metallic screen within it.
To send into the back that substrate 11 in the film-forming component 53 is configured in screen plate, the position of screen plate and substrate 11 is positioned on the relative position that coincide, the mesh of screen plate is arranged on the barrier film 12 that thin film of titanium oxide 31 exposes.When carrying out sputter in this state, on barrier film 12 surfaces of exposing, can form the hydrophilic film of forming by Si oxide 41 (Fig. 1 (d)).
This substrate 11 is shifted out from film deposition system 9, when making mirror, owing to expose thin film of titanium oxide 31 and hydrophilic film 41 on the surface, thus obtain having the visor of self-stip function and Superhydrophilic.
The surface of barrier film 12, when being covered by thin film of titanium oxide 31 or hydrophilic film 41, barrier film 12 no wetting abilities are also passable, as long as can prevent that the diffusion of contaminants in the substrate 11 is interior to thin film of titanium oxide 31.Therefore, can constitute the functional film 3 of possess hydrophilic property with thin film of titanium oxide 31 and hydrophilic film 41.Symbol 6 expressions have the functional base plate of this functional film 3.
In addition, shown in Fig. 2 (a), on barrier film 12 surfaces of substrate 11, make thin film of titanium oxide 32 comprehensive film forming (about thickness 500～3000 ), also can form the hydrophilic film 42 (about thickness 500～3000 ) of island dispersive silicon oxide film etc. in its surface.The thin film of titanium oxide 32 that exposes on the bottom surface in hydrophilic film 42 can obtain self-stip function and Superhydrophilic on this part.Therefore, can constitute functional film 4 by thin film of titanium oxide 32 and hydrophilic film 42.Symbol 7 expressions have the functional base plate of this functional film 4.
At this moment, as long as preventing the impurity such as sodium in the substrate 11 effectively, barrier film 12 immerses in the thin film of titanium oxide 32, even it is also passable not have wetting ability.
Owing to utilize sputtering method can form thin film of titanium oxide, so can obtain the functional film of obdurability.
Owing in thin film of titanium oxide, disposed the hydrophilic film surface, so even do not having also to obtain wetting ability under the environment of uviolizing.Owing in tiny area, mixing thin film of titanium oxide surface and hydrophilic film surface, so be difficult to form water droplet.
Claims (4)
1. film deposition system, this device has:
Disposed the target of barrier film the 1st film-forming component,
Disposed the target of making by titanium oxide the 2nd film-forming component and
Disposed the 3rd film-forming component of the target of hydrophilic film;
Constituting of this device:
Between above-mentioned target in the above-mentioned the 2nd and 3 film-forming component and the above-mentioned film forming object each self-configuring net,
The identical device of above-mentioned net relative position that makes in film forming object and above-mentioned the 3rd film-forming component is set on above-mentioned the 3rd film-forming component,
In above-mentioned the 3rd film-forming component, on the surface of the barrier film that exposes between the mesh-shape thin film of titanium oxide that in above-mentioned the 2nd film-forming component, forms, form in the 1st film-forming component, form above-mentioned hydrophilic film.
2. according to the film deposition system of claim 1 record, the constituting of this device: have universal stage, the above-mentioned film forming object that disposes on above-mentioned universal stage is fed in above-mentioned the 1st, the 2nd, the 3rd film-forming component successively.
3. according to the film deposition system of claim 1 record, wherein, the target of above-mentioned hydrophilic film is made of Si oxide, and above-mentioned hydrophilic film is a silicon oxide film.
4. according to the film deposition system of claim 1 record, wherein, the target of above-mentioned barrier film is made of Si oxide, and above-mentioned barrier film is a silicon oxide film.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11003916A JP2000203885A (en) | 1999-01-11 | 1999-01-11 | Functional thin film, functional substrate and production of titanium oxide thin film |
| JP3916/1999 | 1999-01-11 | ||
| JP3916/99 | 1999-01-11 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001010417A Division CN1165366C (en) | 1999-01-11 | 2000-01-11 | Method for producing functional film, functional base plate and titanium oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1528946A CN1528946A (en) | 2004-09-15 |
| CN100340696C true CN100340696C (en) | 2007-10-03 |
Family
ID=11570501
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001010417A Expired - Fee Related CN1165366C (en) | 1999-01-11 | 2000-01-11 | Method for producing functional film, functional base plate and titanium oxide film |
| CNB2004100078125A Expired - Lifetime CN100340696C (en) | 1999-01-11 | 2000-01-11 | Sputtering apparatus |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001010417A Expired - Fee Related CN1165366C (en) | 1999-01-11 | 2000-01-11 | Method for producing functional film, functional base plate and titanium oxide film |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2000203885A (en) |
| CN (2) | CN1165366C (en) |
| HK (1) | HK1028362A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2814094B1 (en) * | 2000-09-20 | 2003-08-15 | Saint Gobain | SUBSTRATE WITH PHOTOCATALYTIC COATING AND MANUFACTURING METHOD THEREOF |
| KR101014734B1 (en) * | 2001-11-29 | 2011-02-15 | 시바우라 메카트로닉스 가부시끼가이샤 | Apparatus for producing photocatalyst element |
| TWI276613B (en) * | 2002-04-05 | 2007-03-21 | Murakami Corp | Composite material |
| FR2857885B1 (en) * | 2003-07-23 | 2006-12-22 | Saint Gobain | PROCESS FOR THE PREPARATION OF A PHOTOCATALYTIC COATING INTEGRATED IN THE THERMAL TREATMENT OF A GLAZING |
| JP4997421B2 (en) * | 2006-04-21 | 2012-08-08 | 鳥取県金属熱処理協業組合 | Method for producing visible light responsive photocatalyst |
| JP6879819B2 (en) * | 2017-05-09 | 2021-06-02 | フォルシアクラリオン・エレクトロニクス株式会社 | Self-cleaning lens, lens assembly and camera |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002545A (en) * | 1976-02-09 | 1977-01-11 | Corning Glass Works | Method of forming a thin film capacitor |
| CN85107549A (en) * | 1984-10-30 | 1986-08-13 | 国际商用机器公司 | The diffusion barrier layer that is used for maskless coated metal method |
| CN85104654A (en) * | 1984-04-24 | 1986-12-24 | 株式会社堀场制作所 | The mask of using in the spectral filter production |
| CN86204865U (en) * | 1986-07-09 | 1987-12-05 | 天津大学 | Mutliple-purpose sputtering apparatus with opposite targets |
| JPH09310167A (en) * | 1996-05-21 | 1997-12-02 | Toshiba Corp | Sheet type magnetron sputtering device |
-
1999
- 1999-01-11 JP JP11003916A patent/JP2000203885A/en active Pending
-
2000
- 2000-01-11 CN CNB001010417A patent/CN1165366C/en not_active Expired - Fee Related
- 2000-01-11 CN CNB2004100078125A patent/CN100340696C/en not_active Expired - Lifetime
- 2000-12-01 HK HK00107731A patent/HK1028362A1/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002545A (en) * | 1976-02-09 | 1977-01-11 | Corning Glass Works | Method of forming a thin film capacitor |
| CN85104654A (en) * | 1984-04-24 | 1986-12-24 | 株式会社堀场制作所 | The mask of using in the spectral filter production |
| CN85107549A (en) * | 1984-10-30 | 1986-08-13 | 国际商用机器公司 | The diffusion barrier layer that is used for maskless coated metal method |
| CN86204865U (en) * | 1986-07-09 | 1987-12-05 | 天津大学 | Mutliple-purpose sputtering apparatus with opposite targets |
| JPH09310167A (en) * | 1996-05-21 | 1997-12-02 | Toshiba Corp | Sheet type magnetron sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1528946A (en) | 2004-09-15 |
| CN1165366C (en) | 2004-09-08 |
| HK1028362A1 (en) | 2001-02-16 |
| JP2000203885A (en) | 2000-07-25 |
| CN1260232A (en) | 2000-07-19 |
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