CN100337341C - Method for preparing back plate in electroluminescent device preparing process - Google Patents
Method for preparing back plate in electroluminescent device preparing process Download PDFInfo
- Publication number
- CN100337341C CN100337341C CNB03156237XA CN03156237A CN100337341C CN 100337341 C CN100337341 C CN 100337341C CN B03156237X A CNB03156237X A CN B03156237XA CN 03156237 A CN03156237 A CN 03156237A CN 100337341 C CN100337341 C CN 100337341C
- Authority
- CN
- China
- Prior art keywords
- back electrode
- ito
- photoetching
- producing
- seal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a method for producing a back electrode in the producing technology of electroluminescent devices. An ITO glass substrate after photoetching treatment is simply treated in a mode similar to the mode of sealing treatment, and a polyurethane material is printed on the ITO glass substrate after photoetching treatment; an insulation isolating column is formed; after each organic layer is evaporated, the back electrode is evaporated. The method for producing a back electrode comprises the following steps: a streak pattern of the back electrode is designed; a macromolecule material which is polydimethylsiloxane is selected for manufacturing the seal of the streak pattern; the seal is used for printing the polyurethane material on the ITO glass substrate after photoetching treatment, the direction is vertical to the ITO, and the thickness is about 1 to 5 micrometers; after drying and cooling treatment is carried out, a ditch which is the isolating column vertical to an ITO streak is formed; other layers are coated by vaporization; the back electrode material is coated by vaporization. The method for producing a back electrode has the advantages that the photoetching complex technology is saved, and the defects of low resolution and difficult board (mould) opposite combination of the masking method are overcome.
Description
Technical field
The present invention relates to the manufacturing technology of back electrode among a kind of electroluminescent device preparation technology.
Background technology
The preparation electroluminescent device all must be considered this important step of back electrode.Traditional method is a mask method, has both utilized the good template of prior photoetching (some position) to block or (and other positions) leaked the electric conducting material (such as aluminium, silver or gold etc.) of desire evaporation.The shape of electrode is identical with the lithographic pattern of template.But because the cause of mechanical clearance and the limitation of mould material, the striped of electrode can not be done too carefully.Can't satisfy the requirement of high definition degree of analysing.1994, C.W.Tang disclosed a kind of U.S. Patent number: 5,276,380, and patent name: " organic electroluminescent image display device ", and on glass with the way of photoetching at electroconductive ITO, the technology of the prefabricated insulated column vertical with the ITO striped.The purpose of this technology is to replace mask technique, improves the resolution of matrix panel.But this specification requirement has mask aligner and dustless environment and other harsh conditions etc. of superior in quality (costing an arm and a leg); Reason is the core-insulated column of this technology, is to adopt photoetching method to realize.Another shortcoming of this technology is easy short circuit; Because organic layer is thinner near the contact-making surface of insulated column and ITO, make electrode material herein that the possibility that is penetrated on the following anode ITO be arranged.
Summary of the invention
The technical problem to be solved in the present invention had both overcome mask method to plate difficulty, the coarse defective of lines, had solved problems such as the photoetching cost is too high, technology is loaded down with trivial details again.Back electrode manufacture method among a kind of electroluminescent device preparation technology is provided.
The technical solution adopted in the present invention is: be exactly specifically, in preparation electroluminescent device process, earlier good ito glass or flexible substrate to photoetching, carry out the simple process of similar formula with an official seal affixed, polyurethane or dielectric resin material are printed on the good ito glass substrate of photoetching; Thereby form the insulation insulated column, evaporate back electrode in order to after evaporating each organic layer.
The concrete steps of technical solution of the present invention:
(1) candy strip of design back electrode;
(2) select macromolecular material-dimethyl silicone polymer, make the seal of candy strip;
(3) utilize this seal, polyurethane material is printed on the good ito glass substrate of photoetching, direction is vertical with ITO, and thickness is about the 1-5 micron;
(4) after the oven dry cooling, form vertical with ITO striped raceway groove-insulated column;
(5) other layers of evaporation;
(6) evaporation back electrode material.Thereby finish insulated column and preparation of devices.
The mask technique of the present invention and present use and photoetching technique prepare the beneficial effect that the method for back electrode is compared: at first it is than the resolution height of mask method; Secondly, it has omitted the complex techniques process of photoetching.Can reduce cost, can raise the efficiency again.Mask process when in the technical process of thin film electroluminescence matrix panel, just having omitted the evaporation back electrode like this; Make the thin-film EL display panel of efficient colour.
Description of drawings
Fig. 1 insulated column technology of the present invention
The method block diagram for preparing back electrode in Fig. 2 electroluminescent device technology
Among the figure: glass substrate 1, ito anode 2, organic layer 3, insulated column 4, back electrode-negative electrode 5
Embodiment
Embodiments of the present invention as shown in Figure 2, its step:
(1) candy strip of design back electrode;
(2) select macromolecular material-dimethyl silicone polymer Poly (dimethylsiloxane), make the seal of candy strip;
(3) utilize this seal, with polyurethane or dielectric resin material etc., be printed on good ito glass of photoetching or the flexible substrate or by siphonage polymer, filling is entered; Direction is vertical with ITO, and thickness is the 1-5 micron;
(4) after the oven dry cooling, form vertical with ITO striped raceway groove-insulated column, finish the preparation of insulated column;
(5) other layers of evaporation: electrode modification film, carrier transmission material film, luminescent material thin-film etc.;
(6) evaporation back electrode material or magnesium silver alloy etc.Thereby finish the preparation of insulated column and entire device.
According to above method, particularly (2), (3), (4), when preparation electroluminescent matrix screen, when both avoiding plating back electrode to the hardship of plate; Can under the condition of non-photoetching, finish high-resolution matrix panel again.
Claims (1)
1. prepare the method for back electrode among the electroluminescent device preparation technology, it is characterized in that: the concrete steps of this method:
(1) candy strip of design back electrode;
(2) select macromolecular material-dimethyl silicone polymer, make the seal of candy strip;
(3) utilize this seal, polyurethane or dielectric resin material are printed on the good ito glass substrate of photoetching, direction is vertical with ITO, and thickness is the 1-5 micron;
(4) after the oven dry cooling, form the raceway groove-insulated column vertical with the ITO striped;
(5) other layers of evaporation: electrode modification film, carrier transmission material film, luminescent material thin-film;
(6) evaporation back electrode material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03156237XA CN100337341C (en) | 2003-09-02 | 2003-09-02 | Method for preparing back plate in electroluminescent device preparing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03156237XA CN100337341C (en) | 2003-09-02 | 2003-09-02 | Method for preparing back plate in electroluminescent device preparing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1486123A CN1486123A (en) | 2004-03-31 |
| CN100337341C true CN100337341C (en) | 2007-09-12 |
Family
ID=34156896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB03156237XA Expired - Fee Related CN100337341C (en) | 2003-09-02 | 2003-09-02 | Method for preparing back plate in electroluminescent device preparing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100337341C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429584B2 (en) * | 2000-03-30 | 2002-08-06 | Pioneer Corporation | Organic electroluminescence display panel and method of manufacturing the same |
| CN1399800A (en) * | 1999-11-23 | 2003-02-26 | 普林斯顿大学理事会 | Method for patterning devices |
-
2003
- 2003-09-02 CN CNB03156237XA patent/CN100337341C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1399800A (en) * | 1999-11-23 | 2003-02-26 | 普林斯顿大学理事会 | Method for patterning devices |
| US6429584B2 (en) * | 2000-03-30 | 2002-08-06 | Pioneer Corporation | Organic electroluminescence display panel and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1486123A (en) | 2004-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5306341B2 (en) | Method for forming a patterned layer on a substrate | |
| JP4994727B2 (en) | Organic transistor active substrate, manufacturing method thereof, and electrophoretic display using the organic transistor active substrate | |
| DE10324880B4 (en) | Process for the preparation of OLEDs | |
| KR102336491B1 (en) | Active matrix led display | |
| CN102334392B (en) | The manufacture method of electronic unit and the electronic unit manufactured by the method | |
| CN1311625A (en) | Nano stack film circuit material | |
| CN1832191A (en) | Organic thin film transistor array panel and manufacturing method thereof | |
| CN201936883U (en) | Organic electroluminescence display | |
| WO2001017319A1 (en) | Organic electroluminescent device and production method | |
| WO2023082686A1 (en) | Manufacturing method for low-surface-roughness transparent electrode | |
| CN110310914A (en) | A kind of flexible device and preparation method thereof, flexible apparatus | |
| WO2005107346A1 (en) | Component placement substrate and production method thereof | |
| CN100337341C (en) | Method for preparing back plate in electroluminescent device preparing process | |
| CN1214356C (en) | Organic electroluminescent device | |
| CN1917227A (en) | Organic electroluminescent display, and prepartion method | |
| GB2485828A (en) | Organic Transistor Arrays | |
| CN106430083B (en) | The preparation method of nano level columnar thing woods | |
| CN1867214A (en) | Method for preparing electroluminescent matrix device | |
| CN1711810A (en) | Method for controlled ink-jet spreading of polymers for the insulation and/or protection of printed circuits | |
| US20060220528A1 (en) | Light-emitting devices | |
| RU2552402C2 (en) | Electronic devices | |
| CN113327890A (en) | Manufacturing method of backboard, display panel and display device | |
| CN1747622A (en) | Metal-base circuit carrier | |
| CN1942056A (en) | Production of flexible circuit board | |
| CN1688182A (en) | Method for making high-molecular lattice lighting display screen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070912 Termination date: 20100902 |