CH678245A5 - - Google Patents

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Publication number
CH678245A5
CH678245A5 CH2133/89A CH213389A CH678245A5 CH 678245 A5 CH678245 A5 CH 678245A5 CH 2133/89 A CH2133/89 A CH 2133/89A CH 213389 A CH213389 A CH 213389A CH 678245 A5 CH678245 A5 CH 678245A5
Authority
CH
Switzerland
Prior art keywords
gate
cathode
base layer
anode
doped
Prior art date
Application number
CH2133/89A
Other languages
German (de)
English (en)
Inventor
Friedhelm Dr Bauer
Jens Dr Gobrecht
Thomas Stockmeier
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to CH2133/89A priority Critical patent/CH678245A5/de
Priority to DE4014207A priority patent/DE4014207A1/de
Publication of CH678245A5 publication Critical patent/CH678245A5/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures

Landscapes

  • Thyristors (AREA)
CH2133/89A 1989-06-07 1989-06-07 CH678245A5 (enrdf_load_stackoverflow)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CH2133/89A CH678245A5 (enrdf_load_stackoverflow) 1989-06-07 1989-06-07
DE4014207A DE4014207A1 (de) 1989-06-07 1990-05-03 Bipolares, ueber ein gate abschaltbares leistungshalbleiter-bauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH2133/89A CH678245A5 (enrdf_load_stackoverflow) 1989-06-07 1989-06-07

Publications (1)

Publication Number Publication Date
CH678245A5 true CH678245A5 (enrdf_load_stackoverflow) 1991-08-15

Family

ID=4226646

Family Applications (1)

Application Number Title Priority Date Filing Date
CH2133/89A CH678245A5 (enrdf_load_stackoverflow) 1989-06-07 1989-06-07

Country Status (2)

Country Link
CH (1) CH678245A5 (enrdf_load_stackoverflow)
DE (1) DE4014207A1 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4123414A1 (de) * 1991-07-15 1993-01-21 Siemens Ag Leistungs-halbleiterbauelement und verfahren zu dessen herstellung
JP3182262B2 (ja) * 1993-07-12 2001-07-03 株式会社東芝 半導体装置
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
CN104919595B (zh) 2013-06-24 2019-06-07 理想能量有限公司 具有双向双极晶体管的系统、电路、器件和方法
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
JP6659685B2 (ja) 2014-11-06 2020-03-04 アイディール パワー インコーポレイテッド ダブルベースバイポーラジャンクショントランジスタの最適化された動作を有する回路、方法、及びシステム、並びに、可変電圧自己同期整流器回路、方法、及びシステム、並びに、ダブルベースコンタクト双方向バイポーラジャンクショントランジスタ回路による動作ポイント最適化、方法、及びシステム。
CN114551601B (zh) * 2022-04-26 2022-07-15 成都蓉矽半导体有限公司 高抗浪涌电流能力的集成栅控二极管的碳化硅mosfet

Also Published As

Publication number Publication date
DE4014207A1 (de) 1990-12-13

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