CH635210A5 - CIRCUIT ARRANGEMENT FOR CONTROLLING A BISTABLE RELAY. - Google Patents

Description

The object of the invention is now to provide a further embodiment according to FIG. 23 to design an embodiment according to FIG. 3 with a white

that the self-acting diode required when the excitation voltage is lost;

24, an embodiment according to FIG. 23 with a

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Field effect transistor and a thyristor. Base resistance R1 due to the higher overall gain of the

In the arrangement shown in FIG. 1, an ohmic flip-flop formed from the transistors T2, T3 and having a greater resistance R1 can be dimensioned for the connections of the excitation voltage U. Through the resistor R2 is connected to allele and with one of its connections with the anode and cathode of the diode D1, the same potential is formed, the resistor element diode D1 is connected, which in 5 thereby ensures that the flip-flop T2, T3 remains blocked. Forward direction to the excitation voltage U is switched. As the excitation voltage U now drops somewhat, it remains on

The semiconductor switch is a transistor T with its base electrode, the cathode of the Zener diode ZD 1, and the potential present at the connection point of the diode D1 and ohmic resistors, because the Zener diode ZD 1 was placed in the reverse direction R1 and on the output side to the non-interconnected is claimed. Only when the excitation voltage U of the connected terminals of the diode Dl and the ohmic resistor 10 has dropped so far that the voltage drop at the zener diode R1 has been switched on. ZD 1 the Zener voltage UZD | achieved, it becomes a manager.

The excitation voltage is applied by closing the switch S by the diode D1 and resistor R2 now occurring, the relay Rls being turned on by the charging current of the voltage drop, the transistor T2 becomes conductive and its base current capacitor C1 is excited. The transistor T1 on the input side can now flow via the zener diode ZD 1 and the ohmic resistance. The level of the threshold voltage of the diode Dl in the blocking direction 15 was R1, and thus the complementary load on it is also blocked and is therefore blocked. Turned on after charging of the transistor T3. The capacitor C1 discharges capacitor C1 only flows to recharge it via the excitation coil Rls, whereby the relay switches back into its required current and a resistance through the base R1 starting position.

conditional current. If the switch S is now opened or the Erre- In addition to the advantage of a compared to the circuit after switching voltage U, the diode Dl now blocks, then 20 Fig. 1 reduced leakage current results in the circuit, the emitter electrode of the transistor T1 positive compared to the - According to Fig. 2 by the implementation of a defined waste chip base electrode. The transistor T1 is hereby carried out so that fluctuations in the excitation voltage U control it, so that the capacitor C1 can be allowed to discharge through the excitation coil maximum value up to the drop-out voltage of the relay. As a result, the bistable switches, without an unintentional switching back of the relay relay back to its starting position. At 25 monostable.

3 shows that a defined drop-in voltage source can be achieved by the losses in the base resistor R1 and also by the fact that one of two ohmic capacitors C1 is only used to charge the capacitor resistors (R3 , R4) existing voltage divider to the tors CI energy. The low expenditure on components enables connections of the excitation voltage (U) to be connected in parallel. Also an economical and space-saving 30 ner of the divider resistors (R3) is with the exciter chip construction. The entire arrangement is preferably connected in the anode of the diode D1 lying for the voltage U. The semi-lead relay provided housing. The switch is connected to the center tap with its control electrode

Instead of the diode D1, a principle voltage divider R3, R4 can be used as the resistance element and an ohmic resistance can also be used on the output side. However, before the divider resistor R3 faces away from a slow discharge of the capacitor C1, 35 resistor element and the other divider resistor R4 provide the diode D1. It also turns on the voltage drop at the on. The drop-out voltage of the relay is in this case the output circuit of transistor T1 during the charging of the capacitor by the ratio of the divider resistors R3, R4, capacitor C1 to its threshold voltage and thus to a switch, a harmless dimension of complementary transistors T2, T3 . In addition, the flip-flop built to charge the capacitor C1, in each case the collector electrode of the ei-the excitation voltage U is also reduced only by the threshold flip-flop transistor with the base electrode of the other voltage of the diode D1. The diode D2 is used in the case of a flip-flop transistor and in which the Emitter polarity of the excitation voltage U serves as protection for the tranelectrode of the one transistor T2 to the cathode of the diode transistor T1. and the emitter electrode of the other transistor T3 to the

In the arrangement shown in FIG. 2, the diode D1 is a common base of the circuit arrangement connected-Zener diode ZD 1 in the forward direction to the excitation voltage U 45 sen, is connected in series in the manner already described. The diode Dl is conductive from an ohmic re-charging of the capacitor C1 when the excitation standby R2 is bridged and as a semiconductor switch one of two voltages U of opposite conductivity type has dropped to the value of the desired drop voltage transistors T2, T3. A flip-flop is provided to define the switching point. The collector electrode of one and to prevent the inadvertent switching on of the transistors is in each case connected to the base electrode of the other tripping stage when voltage peaks occur, the flipping transistor. With this stage transistor, a further npn transistor T4 is connected upstream due to the zener voltage, exemplary embodiment a defined value for the drop voltage in such a way that its collector electrode is fixed to the base electrode of the relay. The drop-out voltage results from the flip-flop transistor T3, whose base electrode with the difference between the excitation voltage U and the Zener voltage center tap of the voltage divider R3, R4 and its emitter UZD). If the excitation voltage U is switched via the switch S to the common base point of the circuit, the charging current of the capacitor C1 flows through the arrangement.

Zener diode ZD 1, the diode D1 and the excitation coil Rls. In order to get a defined tightening voltage, too

The relay is thereby excited and switches. Provided on the diodes that the diode ZD1 and Dl serving as a resistance element, voltage drops in turn occur in the D1, a further one consisting of complementary transistors T5, T6 at the level of their threshold voltages. The pnp transistor T2 6 ° built flip-flop is connected upstream and that to the base elec- is thereby blocked, as was already described in the arrangement of FIG. 1 trode of the first flip-flop transistor T6. Accordingly, the voltage is also applied in such a way that the flip-flop only then turns off transistor T3. when the excitation voltage U is the height of the reference voltage

After charging the capacitor C1 limited voltage exceeds. The reference voltage here specifies the current flow, in turn, essentially to the desired pull-in voltage. As soon as the excitation voltage of the capacitor C1 and a current through the U exceeds the reference voltage, the trigger circuit T5,

Resistor R1. This residual current can, however, be conductive. The charging current of the capacitor C1 can now be kept considerably smaller than in the case of FIG. 1, because the diode D1 and the excitation coil Rls flow, so that the

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Relay responds. If the excitation voltage U falls below that when the excitation voltage U rises slowly, it is initially

Reference voltage, then the flip-flop T5, T6. The transistor T7 is turned on to educate the transistor T10 and the reference voltage is blocked between the base electrode. The common voltage divider tap has positive-first transistor T6 and the common ground potential of the res potential as the emitter electrode of transistor T8, so circuit arrangement means the series connection of an ohmic s that this is conductive and T9 is blocked. It is thus ensured that resistor R7 and one in the reverse direction to the excitation voltage cause the capacitor C1 to be discharged.

voltage polarized Zener diode ZD2 switched on. If the sum of the excitation voltage U increases

In order to ensure that the residual currents of the transistors T5, the base-emitter voltage of the transistor T7 and the span-T6 are kept small and an unintentional change in voltage drop across the resistor R14, the Zener voltage UZD3 at the trigger circuit is avoided, the base-emitter paths are OK Base electrode of T7 exceeds, then the transistor of the transistors T5, T6 is blocked with ohmic resistors R5, R6 T7 and transistor T10 conductive. Bridged on this first. The capacitor C2 between the base and emitter switchover point of the Schmitt trigger gets the common electrode of the transistor T6 is provided in order to have a more negative potential than the emitters of the excitation voltage U when the voltage divider tap is turned on, the electrodes of the transistors T8, T9 switching too early , making T9 conductive and T8 prevent flip-flops T5, T6. 15 is blocked. Now the charging current of the capacitor Cl flows

So that the circuit arrangement also with AC voltage and the relay is energized.

rectifier D2 is switched on. When the excitation voltage U drops, the second DC operation becomes the reverse polarity protection. Additional switching point of the Schmitt trigger is reached when the sum is still a capacitor C4 in the input circuit of the semiconductor from the voltage drops on the base-emitter path of the switch T4, T3, T2, the capacity of which is 20 transistors T7 and the resistor R7 the Zener voltage UZD3 is selected so that the resulting discharge time constant falls below. Now transistor T7 is turned on again and Tranais the period of the transistor T10 caused by the rectification is blocked. As a result, transistor T9 is voltage dips. is blocked and transistor T8 becomes conductive, which causes the

In the embodiment of FIG. 4, the diode Dl is a gate Cl is discharged and the relay switches back.

25, the capacitor C3 at the input of the circuit arrangement is complementary to the one parallel to the series circuit, which also ensures perfect switching of the Schmitt trigger

Excitation winding Rls and capacitor C1 are first at excitation voltages U, the switching edges of which are high steepness semiconductor switches. It also has a voltage divider between. Otherwise, the connections of the excitation voltage U are switched on by the choice of the Zener voltage, at whose UZD3 the switchover points of the trigger, so that the control electrodes of the semiconductor switches for pulling and tapping are applied to the drop-out voltage of the relay, even when the excitation voltage is creeping - the alternate activation thereof. The potential is precisely defined. They differ only in that at the tap of the voltage divider is chosen so that the hysteresis voltage common with Schmitt triggers.

applied excitation voltage U the further semiconductor switch. FIG. 5 shows a variant of an arrangement according to FIG. 3 or

conducts, so that the charging current of the capacitor C1 via FIG. 2, with the parallel connection instead of the Zener diode ZD 1

Diode D1 and the excitation coil Rls flows and the first semiconductor 35 of a resistor RI 1 and a diode D6 is used. This switch disables. If the excitation voltage U is absent, the semiconductor switch is blocked and the first conductive, in particular in the case of a circuit structure with a discrete construction, whereby sharing an economical alternative. At the base of which the capacitor discharges in the manner described. Transistor T6 applied reference voltage is the

4, a series circuit of the resistor R5, the Zener diode ZD2 and npn transistor T8 is obtained as the first semiconductor switch and a pnp 40 of the diode D7 is obtained as the second semiconductor switch. The characteristic of the diode D7 shows transistor T9 provided. The npn transistor T8 is the collector in this case, FIG. 6. As soon as the excitation voltage U exceeds the reference chip side with the cathode of the diode D1, on the emitter side with the voltage, the trigger circuit T5, T6 becomes conductive and the common ground potential of the circuit arrangement becomes a relay Rls speaks.

bound. The pnp transistor T9 is connected with its collector electrode. In the exemplary embodiment shown in FIG. 7, the one at the anode of the diode D1 and its emitter electrode is connected to the resistor R1 and the Zener diode ZD1 from FIG. 2 through a connection of the excitation voltage U. The voltage flip-flop T5, T6 with a basic voltage divider R13, R14 consists of an ohmic resistor RIO and one replaced. The flip-flop becomes conductive when the voltage drop caused by the further voltage drop between the tap and the common ground excitation voltage U turns on the threshold potential. Both transistors T8, voltage of the base-emitter diode of the first flip-flop transistor T9 are exceeded on the base side by tapping the voltage divider 50 T6. The relay Rls is energized and bound, charging between the taps of the voltage capacitor C1. In FIG. 8, the lers and the base electrodes of the transistors T8, T9 ohmic additional transistor T10 are conductive and the diode D5 is blocked. Resistors R8, R9 are turned on. If, however, the excitation voltage U is interrupted, it blocks

The further resistance shown in FIG. 4 of the transistor T10 and the diode D5 conducts, so that a small voltage divider is through the output circuit of a Schmitt trigger T7 fed by the excitation current 55 of the capacitor C1 via the resistor R2 voltage U. , T10 formed. Flows on. which causes a voltage drop that is sufficient to pass through the input of this Schmitt trigger is one from the excitation of the trigger circuit T2, T3. Now reference voltage derived from voltage U can be applied, such that capacitor C1 discharges via flip-flops T2, T3 and Rls that the switching points of the Schmitt trigger switch the response back to the starting position.

or determine the dropout voltage of the relay. 60 The built up from the transistors T2, T3 and T5, T6

So that the emitter potential of transistor T8 in the case of conductive flip-flops SCR1, SCR2 are identical and transistor T10 can also be clearly above its collector potential by other controllable semiconductors, e.g. Thyristors, replaced and thus transistor T8 safely blocks, are two diodes D4, D5.

in the forward direction between its emitter electrode and While in the arrangement shown in Fig. 2, due

Ground potential switched on. A diode D3 in the collector 65 due to the junction capacitance of the Zener diode ZD1, short supply line of the transistor T8 prevents accidental voltage drops or fluctuations in the excitation voltage-creeping charging of the capacitor C1 via the resistance U, a discharge of the capacitor C1 or a residue RIO, R8. switching of the relay Rls can trigger this in the switching

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9 avoided by the flip-flop T2, T3 transistor T4 avoided. For this purpose, the base electrode of the transistor T4 is connected via the series circuit of a resistor R16 and a Zener diode ZD3 with their cathode to the positive pole of the excitation voltage source. The Zener voltage of the diode ZD3 defines the voltage value up to which the excitation voltage U can drop without causing an unintentional discharge of the capacitor C1 and thus a switching back of the relay Rls.

In the circuit arrangement shown in FIG. 10, the ohmic resistance R17 is additionally inserted between the base electrode of the transistor T2 and the collector electrode of the transistor T3 compared to that of FIG. 2. It is thereby achieved that neither an excessive current load nor even a short circuit can occur at the multivibrator T2, T3 if the voltage increase at this multivibrator is too steep. Instead of the resistor R17, an ohmic resistor can equally well be inserted between the collector electrodes of the transistor T2 and the base electrode of the transistor T3.

FIG. 11 shows an embodiment in which, as in FIG. 5, instead of the Zener diode ZD1 (FIG. 2), a parallel connection of a resistor R1 and a diode D6 polarized in the forward direction to the excitation voltage U is used. When the excitation voltage U is switched off, the trigger circuit consisting of the transistors T2, T3 is triggered by the voltage drop across this parallel circuit D6, RI 1. The capacitor C1 is discharged and the relay Rls is switched back in its initial position.

In a further development of the embodiment according to FIG. 11, a further trigger circuit comprising the transistors T5, T6 is connected upstream according to FIG. This flip-flop corresponds in function to the flip-flop according to FIG. 3, but differs in structure from this in that the reference voltage is obtained by the Zener diode ZD4, which is connected between the base electrode of the first transistor T6 and the emitter electrode of the second transistor T5 .

13 and 14 explain the function of the circuit according to FIG. 12, FIG. 13 illustrating the characteristic curve of the Zener diode ZD4 and FIG. 14 the switching behavior of the circuit arrangement with increasing and decreasing excitation voltage U. If the excitation voltage U rises slowly according to FIG. 14 (a), a current flow only begins when the zener voltage Uz is reached. Only at this moment does the voltage for the series circuit consisting of relay Rls and capacitor C1 have an effect, as shown in FIG. 14 (b). The capacitor is charged and the relay responds. When the excitation voltage U drops as shown in FIG. 14 (c), the Zener diode ZD4 remains switched through until the residual voltage Uo is reached. After falling below this residual voltage, the trigger circuit containing the Zener diode ZD4 and the transistors T5, T6 is blocked, so that the voltage curve according to FIG. 14 (d) results at the output of the trigger circuit. At this moment, the capacitor C1 begins to discharge via the flip-flop T2, T3, and the relay switches back to its initial position.

FIG. 15 shows a variant of the circuit according to FIG. 2, which consists in the fact that an additional pnp transistor TI 1 is switched on in the emitter circuit of the transistor T3, the base electrode of which is connected to the positive pole via a diode D10 polarized in the reverse direction to the excitation voltage U. the excitation voltage is connected. This additional measure ensures that the semiconductor switch consisting of transistors T2, T3 remains reliably blocked even when higher excitation voltages occur.

In a modification of the circuit arrangement according to FIG. 1, an npn transistor T1 'is used as the semiconductor switch according to FIG. 16, which is connected with its emitter electrode to the anode of the diode D1 and with its base electrode to the cathode of this diode. The diode D1 is also a zener diode

ZD1 connected in the forward direction to the excitation voltage and the collector-emitter path of a switching transistor T12, on the base electrode of which there is a reference voltage. In the present case, the reference voltage is implemented by a series circuit comprising a resistor R18 and a further Zener diode ZD5. The dropout voltage of the relay Rls is determined by this reference voltage.

As a variant of FIG. 16, a thyristor SCR2 and SCR1 is used instead of the npn transistors Tl 'and T12 in the circuit according to FIG.

In the embodiment according to FIG. 18, a Schmitt trigger with the transistors T7, T10 is provided, similarly to that according to FIG. 4, for controlling the semiconductor switch T8. In order to ensure its function even when the excitation voltage U is switched off, storage capacitor C3 is provided in the circuit according to FIG. 4 and then takes over the power supply. In the circuit according to FIG. 18, however, the current for operating the Schmitt trigger when the excitation voltage is switched off is supplied from the capacitor C1 via a diode D11. The arrangement according to FIG. 18 is particularly advantageous when the circuit is to be implemented using integrated circuit technology because the storage capacitor C3 provided in FIG. 4 is saved.

Another possibility of making the energy required for the Schmitt trigger T7, T10 available when the excitation voltage is switched off, according to FIG. 19, is that a pnp transistor T15 is switched on in parallel with the series circuit comprising capacitor C1 and relay winding Rls Base electrode is connected to the positive pole of the excitation voltage U via reverse diodes Dl 1. As long as the excitation voltage is present, the diodes Dil and thus also the transistor T1 5 are blocked. When the excitation voltage is switched off, on the other hand, the transistor Tl 5 becomes conductive, so that this transistor supplies the base current via the diodes Dl 1 to the Schmitt trigger T7, T10, which drives the transistor switch T8. This in turn then short-circuits the series circuit comprising capacitor C1 and relay winding R1.

A development of the circuit arrangement according to FIG. 12 is shown in FIG. 20. As in FIG. 12, the Zener diode ZD4 connected between the base electrode of the first flip-flop transistor T6 and the emitter electrode of the second flip-flop transistor T5 causes the flip-flop to become conductive only when the Zener voltage is exceeded.

Instead of each Zener diode, it is also possible to use a parallel connection of two diode branches, in which in one branch several diodes are connected in series with the same polarity, while in the other branch a single diode is antiparallel. If, for example in FIG. 20, the Zener diode ZD 1 and / or ZD4 is replaced by such a diode parallel connection, the drop-out voltage of the relay depends on the number of diodes of the one diode branch which are connected in series with the same polarity.

A further development of the circuit arrangement according to FIG. 2 is illustrated in FIG. 21, in which instead of the Zener diode ZD 1, a diode D6 is switched on in the forward direction to the excitation voltage U. A directly coupled flip-flop, consisting of two transistors Tl 3, Tl 4, is connected between the excitation voltage connections, the diode D6 being located between the emitter electrodes of the transistors T13, T14. The drop voltage of the relay Rls is determined by the voltage divider R19, R20, at the tap of which the base of the transistor T13 is located. As long as the desired excitation voltage U is present, the transistor T13 is conductive and the transistor T14 is blocked. Fluctuations in the excitation voltage remain ineffective as long as the voltage drop occurring at resistor R20 keeps transistor T13 conductive. However, when the excitation voltage drops, the minimum voltage required to control the emitter-base path of the transistor T13 becomes

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falls below, this transistor blocks, and the transistor switches and its collector electrode via an ohmic T14 becomes conductive. By this measure, an abrupt switch-through and semiconductor switch T2, T3 is reached with a resistor R23 at the connection point of capacitor C1 predetermined drop voltage. Through this th the flip-flop T2, T3 is reached, whereby the capacitor C1 discharges measures that the semiconductor switch is switched back at higher excitation and the relay Rls. Compared to FIG. 1, s voltages U are not inadvertently tipped and a defined drop voltage is thus achieved overall. Reduction of the current load on the transistors T2, T3.

The circuit according to FIG. 21, as shown in FIG. 22, can also be modified in the two circuits according to FIGS. 23 and 24 in such a way that instead of the transistor T14 of FIG. 21, two inputs marked + are provided, of which the a diode D7 between the collector electrodes of the Transisto- in the drawing upper connection, which is switched on directly with the input ren T3, Tl 3. Also when the semiconductor switch T2, T3 is connected to io for lower Erre-Fig. 22, the drop voltage of the relay Rl is provided by the voltage voltages, while the division ratio of the resistors R19, R20 in the drawings is predetermined. lower entrance due to the interposition of the others

23 and 24 show further developments of the switching flip-flop T5, T6 for higher excitation voltages.

The arrangement according to FIG. 24 differs Dl from another diode D6 in the forward direction to the exciter from that according to FIG. 23 in that upstream instead of the further breakover voltage U and A further diode D9, whose ter thyristor SCR3 is provided, is inserted into the input circuit of the half stage T5, T6, a conductor switch T2, T3 driven by a field effect transistor FET. The circuit according to FIG. 23 is located on the control electrode of the semiconductor switch. behaves essentially in the same way as the circuit. In addition, the base electrode of transistor T4 is a further one according to FIG. 23.

Diode D8 forward in direction of excitation voltage

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Claims (36)

635 210 2 PATENT CLAIMS (R3) with the excitation voltage 1.Circuit arrangement for controlling a bistable connection of the resistance element is connected and that relay, the excitation coil of which is connected to a capacitor in series with the semiconductor switch with its control electrode on the center, in which the series connection of coil and capacitor is applied to the voltage divider (R3, R4) and is on the output side to the excitation of the relay and simultaneous charging of the capacitor, the connection of the capacitor facing away from the one partial resistor (R3) is connected to excitation voltage and, in the absence of a resistance element and the other divider resistor, excitation voltage is switched on by an output circuit to it (R4) (Fig 3) parallel-connected semiconductor switch can be short-circuited, 7. Circuit arrangement according to claim 6, characterized whereby the relay switches back to its starting position, shows that as a resistance element one in forward direction - characterized in that the semiconductor switch with its io device to the excitation voltage (U) diode (Dl)) and as an input circuit to a series excitation coil (Rls) and semiconductor switch a flip-flop made up of complementary transistors (T2, capacitor (C1) connected in parallel T3) is provided that each Kolist and that after charging the capacitor (C1) the electrode of the one flip-flop transistor (T2) with the and switched off Excitation voltage (U) is a voltage drop that occurs at the resistor base electrode of the other flip-flop transistor (T3) and that the semiconductor switch is conductive and that the emitter electrode of the one transistor (T2) controls. to the cathode of the diode (D1) and the emitter electrode of the 2. Circuit arrangement according to claim 1, characterized in that another transistor (T3) at the common base point that an ohmic resistor (R1) is connected to the connection circuit arrangement (FIG. 3). sen the excitation voltage (U) connected in parallel and with an 8th circuit arrangement according to claim 7, of its connections to the resistance element, 20 shows that the other flip-flop transistor (T3) has a white switch and that the semiconductor switch with its control electrode is connected upstream of the further transistor (T4) in such a way that its Kol connection point between the resistance element and the ohmic detector electrode the base electrode of the other flip-flop resistor (R1) and on the output side to the transistors (T3), the base electrode of which is connected to the center tap of the connected connections of the resistance element and the voltage divider (R3, R4) and the emitter electrode of which is the ohmic resistor ( R1) is switched on. 25 common base of the circuit arrangement connected 3. Circuit arrangement according to claim 2, characterized thereby (Fig. 3). is characterized in that as a resistance element in a forward 9. Circuit arrangement according to one of the preceding device to the excitation voltage (U) switched diode (Dl) and as claims, characterized in that the resistance sele semiconductor switch is a pnp transistor (T1) is used, and one of complementary transistors (T5, T6) so that the transistor (Tl) is connected with its emitter electrode to the 30-way flip-flop or a cathode of the diode (Dl) connected by a field effect transistor (Fig. 1). controlled thyristor (SCR3) is connected upstream and that to the 4. Circuit arrangement according to claim 1, characterized in that the base electrode of the first flip-flop transistor (T6) or records that the resistance element is a Zener diode (ZD1), the field-effect transistor is applied with a reference voltage, in the forward direction to the excitation voltage (U) or a diaphragm, that the flip-flop or the thyristor is only connected upstream of the arrangement, that an ohmic resistor becomes 35 when the excitation voltage exceeds the level of the reference voltage (R1) parallel to the connections of the excitation voltage (U). switches and with one of its connections to the anode of the 10th circuit arrangement according to claim 9, characterized Zener diode (ZD 1) or connected to the diode arrangement characterized in that the collector electrode of the first flip is that the semiconductor switch with its control electrode on the step transistor (T6) with the base electrode of the second flip connection point of the resistance element with the cathode 40 step transistor (T5) and the collector electrode of the second one of the Zener diode (ZD 1) or with the diode arrangement is located and the flip-flop transistor (T5) is connected to the base electrode of the first output side which is not connected to the Zener diode (ZD 1) or Dio flip-flop transistor (T6) that the The base-emit-connected connections of the resistor section of both transistors (T5, T6), each with an ohmic element and the ohmic resistor (R 1) connected to the resistor (T5, R6), are bridged and that between the and that the height the Zener voltage by the difference between 45 a connection of the excitation voltage and the emitter voltage and the desired drop voltage of the trode of the first transistor (T6) and the base electrode of a relay is fixed. Capacitor (C2) is turned on (Fig. 3). 5. Circuit arrangement according to claim 4, characterized 11. Circuit arrangement according to claim 9 or 10, characterized in that as a resistance element is characterized by an ohm- that in order to achieve the reference voltage between resistor (R2) bridged diode (Dl) in pass- 50 see the base electrode of the first transistor (T6) and the direction to the excitation voltage (U) switched on and as a semi-common ground potential of the circuit arrangement, the circuit-breakers one opposite of two transistors (T2, T3) - series connection of an ohmic resistor (R7) and one in th conductivity type existing flip-flop is used, the blocking direction to the excitation voltage polarized Zener diode (ZD2) such that the base electrode of one transistor (T2) is switched on (Fig. 3). Connection point of Zener diode (ZD 1) or diode arrangement 55 12. Circuit arrangement according to claim 1, thereby and diode (D1) guided and with the collector electrode characterized in that the resistance element is preceded by another transistor (T3) and the collector electrode of a semiconductor switch, that this semiconductor switching transistor (T2) is connected to the base electrode of the other transistor ter in the conductivity type complementary to that parallel to (T3), and that the one transistor (T2) with its series connection of excitation winding (Rls) and capacitor emitter electrode to the cathode of the diode (Dl) and the other 60 (C1) lying first semiconductor switch is that a voltage transistor (T3) is connected on the emitter side to the connection point of the connection of the excitation voltage (U) connected in parallel between the connections of the excitation voltage and that the control electrodes of the semiconductor switch to resistance and the Se Series connection of excitation coil (Rls) whose alternate control is connected to a tap of the chip and capacitor (C 1) (Fig. 2.). are divided. 6. Circuit arrangement according to claim 1, characterized in that the circuit arrangement according to claim 12, characterized in that one of two ohmic resistors (R3, R4) is characterized in that as a resistance element a voltage divider in passage to the connections of the excitation direction to the excitation voltage polarized diode (Dl), as the first voltage (U) connected in parallel, that one of the partial resistor semiconductor switches is an npn transistor (T8) and as a second half. A pnp transistor (T9) is provided in such a way that the npn transistor (T8) is connected on the collector side to the cathode of the diode (Dl), and on the emitter side is connected to the common ground potential of the circuit arrangement, that the pnp transistor (T9) is connected to its collector electrode at the anode of the diode (Dl) and with its emitter electrode at a connection of the excitation voltage (U), there is an ohmic resistor (RIO) and another resistor connected between the tap and the common ground potential and that the two Transistors (T8, T9) are connected on the base side to the tap of the voltage divider. 14. A circuit arrangement according to claim 12, characterized in that a diode (Dl) which is polarized in the forward direction to the excitation voltage, a npn transistor (T8) as the first semiconductor switch and a pnp transistor (T9) as the second semiconductor switch are provided as the resistance element The npn transistor (T8) on the collector side is connected to the cathode of the diode (Dl), on the emitter side it is connected to the common ground potential of the circuit arrangement, that the pnp transistor (T9) with its collector electrode on the anode of the diode (D 1) and with its emitter electrode at a connection of the excitation voltage (U) is that an ohmic resistor (R 10) and an output circuit of a so-called Schmitt trigger (T7, T10) fed by the excitation voltage (U) are provided as a voltage divider and connected between the tap and the common ground potential that the two transistors (T8, T9) are connected on the base side to the tap of the voltage divider and that at the on gear of the Schmitt trigger, a reference voltage derived from the excitation voltage (U) is applied, the switching points of the Schmitt trigger determining the response or dropout voltage of the relay. 15. Circuit arrangement according to one of claims 13 or 14, characterized in that between the tap of the voltage divider and the base electrodes of the transistors (T8, T9) ohmic resistors (R8, R9) are switched on. 16. Circuit arrangement according to one of the preceding claims, characterized in that the excitation voltage (U) is supplied via a rectifier (D2) and a capacitor (C4) is switched on in the input circuit of the semiconductor switch and that the capacitance of the capacitor (C4) is selected in this way that the resulting discharge time constant is greater than the duration of the voltage drops caused by the rectification. 17. Circuit arrangement according to one of claims 1 to 8, characterized in that the resistance element is preceded by a thyristor, to the control electrode of which a reference voltage is applied, such that the thyristor becomes live when the excitation voltage exceeds the level of the reference voltage. 18. Circuit arrangement according to claim 9, characterized in that the collector electrode of the first flip-flop transistor (T6) is connected to the base electrode of the second flip-flop transistor (T5) and the collector electrode of the second flip-flop transistor (T5) is connected to the base electrode of the first flip-flop transistor (T6) that the base-emitter paths of both transistors (T5, T6) are each bridged with an ohmic resistor (R5, R6), that the base-emitter path of the second flip-flop transistor (T5) through the parallel connection of an ohmic resistor (RH) and one diode (D6) which is polarized in the forward direction to the supply voltage (U), and that a further ohmic resistor (R12) is connected between the emitter electrode of the second flip-flop transistor (T5) and the ground potential. (Fig. 5). 19. Circuit arrangement according to one of claims 9, 17 or 18, characterized in that the reference voltage through the series connection of a in the reverse direction to the excitation 635 210 Voltage polarized Zener diode (ZD2) and a diode (D7) with negative differential resistance is realized and that the flip-flop (T5, T6), or the thyristor connected upstream of the resistance element, becomes live when the excitation voltage (U) exceeds the reference voltage (Fig. 5). 20. Circuit arrangement according to claim 1, characterized in that a resistor (R2) bridged diode (Dl) is switched on in the forward direction to the excitation voltage (U) as a resistance element, which is connected upstream of a first flip-flop made up of complementary transistors (T5, T6) that the middle term of a voltage divider (R13, R14) connected in parallel with the connections of the excitation voltage (U) is connected to the base electrode of the first flip-flop transistor (T6) and that a second flip-flop of opposite conductivity type consisting of two transistors (T2, T3) is used as the semiconductor switch is such that the base electrode of one transistor (T2) leads to the junction of the emitter electrode of the second transistor (T5) of the first flip-flop and the diode (Dl) and with the collector electrode of the other transistor (T3) and the collector electrode of the one transistor ( T2) with the base electrode of the other transistor (T3), and that one transistor (T2) with its emitter electrode to the cathode of the diode (D 1) and the other transistor (T3) on the emitter side to the connection point of the resistor connected in parallel with the connections of the excitation voltage (U) and the Series connection of excitation coil (Rls) and capacitor (Cl) is switched on (Fig. 7). 21. Circuit arrangement according to claim 20, characterized in that the collector electrode of the first flip-flop transistor (T6) is connected to the base electrode of the second flip-flop transistor (T5) and the collector electrode of the second flip-flop transistor (T5) is connected to the base electrode of the first flip-flop transistor (T6) (Fig 7). 22. Circuit arrangement according to claim 20 or 21, characterized in that the divider resistor (R14) of the voltage divider switched on between the base electrode of the first flip-flop transistor (T6) and the ground potential is divided into two resistors (R141, R142) such that the connection point of the resistors ( R141, R142) is connected to the base electrode of a pnp transistor (T10), which is connected on the emitter side to one connection of the excitation voltage (U) and on the collector side with the interposition of an ohmic resistor (R15) to the ground potential of the circuit arrangement, and that the collector electrode of the Transistor (T10) is connected to the cathode of a diode (D5) which is on the anode side of the emitter electrode of the second flip-flop transistor (T5) (Fig. 8). 23. Circuit arrangement according to claim 5, characterized in that a further transistor (T4) is connected upstream of the flip-flop transistor (T3), such that its collector electrode is connected to the base electrode of the flip-flop transistor (T3), its emitter electrode is connected to the common base of the circuit arrangement and its base electrode is connected via an ohmic resistor (R16) to the anode of a Zener diode (ZD3), which is on the cathode side at the positive connection of the excitation voltage (U) (Fig. 9.) 24. Circuit arrangement according to claim 5, characterized in that between the base electrode of one and the collector electrode of the other transistor of the flip-flop (T2, T3) an ohmic resistor (R17) is switched on (Fig. 10). 25. Circuit arrangement according to claim 5, characterized in that the resistance element as a diode arrangement is preceded by a diode (D 6) which is polarized in the forward direction to the excitation voltage (U) and is bridged by an ohmic resistor (R11) (Fig. 11). 26. Circuit arrangement according to claim 10, characterized 3rd 5 10th 15 20th 25th 30th 35 40 45 50 55 60 65 635 210 characterized in that to achieve the reference voltage between the base electrode of the first transistor (T6) and the emitter electrode of the second transistor (T5) a Zener diode (ZD 4) is switched on in the reverse direction to the excitation voltage (U) (Fig. 12). 27. The circuit arrangement as claimed in claim 5, characterized in that an additional transistor (TU) with its collector-emitter path is switched on in the emitter circuit of the transistor (T3) of the semiconductor switch and that the base electrode of the additional transistor (T 11) is switched off in the reverse direction Excitation voltage (U) polarized diode (D 10) is connected to the positive pole of the excitation voltage (Fig. 15). 28. Circuit arrangement according to claim 27, characterized in that the additional transistor (TU) is a pnp transistor which is connected on the emitter side to the transistor (T 3) of the semiconductor switch and on the collector side to the ground potential of the circuit arrangement. 29. Circuit arrangement according to claim 2, characterized in that a diode (Dl) connected in the forward direction to the excitation voltage (U) and a npn transistor (T1 ') is used as the resistance element and that the transistor (T 1') with its Emitter electrode is connected to the anode of the diode (D 1) (Fig. 16). 30. The circuit arrangement according to claim 29, characterized in that the diode (D 1) is preceded by a Zener diode (ZD 1) in the forward direction to the excitation voltage (U) and the collector-emitter path of a switching transistor (T12) that between the collector electrode of the switching transistor ( T 12), which is connected to the cathode of the Zener diode (ZD 1) and an ohmic resistor (R 1) is switched on to the ground potential of the circuit arrangement and that a reference voltage is applied to the base electrode of the switching transistor (T 12) (FIG. 16) . 31. A circuit arrangement according to claim 2, characterized in that a diode (Dl) connected in the forward direction to the excitation voltage (U) and a thyristor (SCR2) is used as the resistance element and that the thyristor with its cathode and the anode of the diode (Dl ) connected is. 32. Circuit arrangement according to one of claims 29 or 31, characterized in that the diode (D 1) a Zener diode (ZD1) in the forward direction to the excitation voltage (U) and a thyristor (SCR1) is connected upstream that between the anode of the thyristor (SCR1 ), which is connected to the cathode of the Zener diode (ZD1), and an ohmic resistor (R1) is switched on to the ground potential of the circuit arrangement and that a reference voltage is applied to the control electrode of the thyristor (SCR1) (FIG. 17). 33. Circuit arrangement according to one of claims 30 or 32, characterized in that an ohmic resistor (R 18) with a Zener diode (ZD5) is connected in series to generate the reference voltage. 34. Circuit arrangement according to claim 15, characterized in that a diode (Dil) between the connection point of the capacitor (C 1) with the semiconductor switch and the positive pole of the excitation voltage (U) is switched on in the reverse direction (Fig. 18). 35. Circuit arrangement according to claim 15, characterized in that the series connection of excitation coil (Rls) and capacitor (C) is bridged by the collector-emitter path of a transistor (T15) and that the base electrode of this transistor (T15) via at least one in the reverse direction Excitation voltage (U) switched on diode (Dil) is connected to the positive pole of the excitation voltage (Fig. 19). 36. Circuit arrangement according to claim 5, characterized in that a further flip-flop composed of complementary transistors (T5, T6) is connected upstream of the anode of the Zener diode (ZD 1) connected upstream of the resistance element and that a reference voltage is connected to the base electrode of the first flip-flop transistor (T6) is applied in such a way that the trigger circuit only becomes conductive when the excitation voltage exceeds the level of the reference voltage (FIG. 20). 37. Circuit arrangement according to claim 36, characterized in that the collector electrode of the first flip-flop transistor (T6) is connected to the base electrode of the second flip-flop transistor (T5) and the collector electrode of the second flip-flop transistor (T5) is connected to the base electrode of the first flip-flop transistor (T6) the base-emitter paths of both transistors (T5, T6) are each bridged with an ohmic resistor (R5, R6), that between the emitter electrode of the first transistor (T6) connected to the excitation voltage and its base electrode, a capacitor (C 2 ) is switched on and that in order to achieve the reference voltage between the base electrode of the first flip-flop transistor (T6) and the emitter electrode of the second flip-flop transistor (T5) a reverse zener diode, or a diode voltage reference arrangement is switched on (FIG. 20). 38. Circuit arrangement according to claim 36 or 37, characterized in that two branches of diodes connected in parallel with one another are used as the diode arrangement and / or as the diode voltage reference arrangement, that in one branch a number of diodes corresponding to the desired reference voltage is connected in series, such that the anode of one diode is connected to the cathode of the following diode, and in the other branch there is a single diode, the anode of which is connected to the cathode of the diode located at one end of the first branch and the cathode of which is connected to the anode of the other end of the first mentioned branch connected diode. 39. Circuit arrangement according to claim 5, characterized in that a diode (D 6) is switched on in the forward direction to the excitation voltage as a diode arrangement, that a directly coupled flip-flop (T13, T14) is switched on between the connections of the excitation voltage (U), such that the diode (D 6) lies between the emitter electrodes of both transistors (T13, T14) and that the drop-out voltage of the relay (Rls) is determined by a base voltage divider (R19, R 20) provided for the transistor (T13) (Fig. 21). 40. Circuit arrangement according to claim 5, characterized in that a diode (D 6) is switched on in the forward direction to the excitation voltage as a diode arrangement, that a transistor (T 13) with a base voltage divider (R 19, R 20) between the connections of the excitation voltage (U) is switched on in such a way that its emitter electrode is connected to the anode of the diode (D 6) and its collector side is connected to the ground potential of the circuit arrangement with the interposition of an ohmic resistor (R 21) and that another diode (D 7) is connected with its cathode to the collector electrode of the transistor (T 13) and with its anode to the collector electrode of the transistor (T 3) of the semiconductor switch (FIG. 22). 41. Circuit arrangement according to one of claims 1 to 11, characterized in that the resistor element is preceded by a diode (D 6) in the forward direction to the excitation voltage (U) (Fig. 23). 42. Circuit arrangement according to one of claims 1 to 11 or 41, characterized in that a diode (D 9) is switched on in the input circuit of the semiconductor switch, such that its cathode is connected to the control electrode of the semiconductor switch (Fig. 23). 43. Circuit arrangement according to one of claims 8, 41 or 42, characterized in that the collector electrode of the further transistor (T 4) via an ohmic resistor (R 23) at the connection point of the capacitor (C 1) and 4th 5 10th 15 20th 25th 30th 35 40 45 50 55 60 65 5 635 210 Semiconductor switch is connected and that in the base supply wall on components can be realized than in the known arrangement of the further transistor (T 4) a diode (D 8) in the opening. direction to excitation voltage (U) is switched on (Fig. 23). According to the invention, this object is achieved in that the semiconductor switch is connected in parallel with its input circuit to a resistance element lying in series with the excitation coil and capacitor, and that after the capacitor has been charged and the excitation voltage has been switched off, a voltage drop occurring at the resistance element is related to the circuit arrangement conductor switch controls conductive. Activation of a bistable relay, the excitation coil of which is achieved by means of these measures that the evaluation circuit which is required for the series connection of the known arrangement is completely in coil and capacitor for excitation of the relay and simultaneously saved and thus a particularly simple and space-saving charging of the capacitor connected to the excitation voltage is achieved. In the simplest case, an ohmic resistance in the output circuit to its semiconductor circuit connected in parallel can be provided as resistance and if there is no excitation voltage by means of a element, however, an element with short circuit is preferably short-circuited, as a result of which the relay is in its output - linear characteristic, e.g. one switches back in the forward direction to the excitation position. Voltage-switched diode is used because then the circuitry for switching a bistable load on the input circuit of the semiconductor relay with the aid of a semiconductor switch is, for example, a switch e.g. limited to the value of the threshold voltage of the diode from the book "Relay Lexicon" by H. Sauer, 1st edition 1975.20, but the charging current of the capacitor is almost unknown. When the excitation voltage is applied, it remains impaired. first transistor in series with the coil and capacitor Advantageous refinements of the conductive according to the invention, the relay responds and the capacitor is switched in the dependent claims. Apply a positive control signal to the input of a specified. second transistor, then the first transistor is blocked and 25 exemplary embodiments of the invention are described below with reference to the figures, a third transistor lying parallel to the coil and capacitor. In detail show: stor leading. 1, a circuit arrangement with a diode as a gate is discharged and the relay switches back. If the control status element jumps to which the base-emitter path of a transistor gnal to the value zero, then the second and the third are connected in parallel, The transistor is blocked again, the first transistor is conductive, and the circuitry with a defined drop-out capacitor is recharged, with which the relay switches over Such a circuit arrangement is useful for the operation of FIGS. 3 and 4 arrangements with fixed pull-in and bistable relays if the polarity of the excitation drop voltages for the relays used. The voltage remains unchanged. The relay persists according to FIG. 5 an embodiment according to FIGS. 3 or 2 with a Charging the capacitor in its switching position, independent diode and a resistor instead of the Zener diode; gig of whether the excitation voltage is switched off or according to Fig. 6, the characteristic of the diode with negative differential as before. A diode connected in series prevents resistance; 7 excitation voltage a creeping discharge of Fig. An embodiment with a flip-flop instead of Capacitor. The relay is only switched back by the Zener diode; the positive control pulse at the input of the second transistor 40 Fig. 8 an embodiment of FIG. 7 with a white-triggered. After this pulse from the excitation voltage teren transistor; cannot be obtained if this is switched off, FIG. 9 shows an embodiment with one of the flip-flops, here the need for an external control signal source. switched transistor; From DAS 2624913 a circuit is also known. FIG. 10 shows an embodiment according to FIG. 2 with an arrangement for controlling bistable relays, by means of the 45 additional protective resistor; these behave like monostable relays, that is to say in the event of the failure of FIG. 11, an embodiment with one diode and one Excitation voltage automatically switch back to the starting position - resistance instead of the Zener diode; This is achieved in that an embodiment according to FIG. 11 with a further point of excitation of the excitation coil and capacitor on the one hand and the lower flip-flop; the control electrode of the semiconductor switch, on the other hand, FIG. 13 the characteristic curve of the Zener diode ZD4 from FIG. 12; 14 shows the switching behavior of the arrangement from FIG. 12; is an embodiment of FIG. 2 with a voltage and controls the absence of the exciter. For additional transistor; preventing an unintentional discharge of the capacitor. FIG. 16 shows an exemplary embodiment according to FIG. 1 with an npn — a diode is also connected into the current path here. A 55 transistor; Series resistance in the same path serves both as a short- Fig. 17 an embodiment according to Fig. 16 with thyristor final fuse for the semiconductor switch as well as for the corresponding; Appropriate dimensioning to achieve a defined voltage. FIG. 18 shows an exemplary embodiment according to FIG. 4 with a modified drop, with which relays with economically producible low-energy supply for the Schmitt trigger; voltage winding at higher voltages, e.g. the network 60 Fig. 19 a further embodiment with a modified Voltage must be operated. In contrast, however, this leads to the Schmitt trigger energy supply; To achieve the monostable switching behavior of the relay, FIG. 20 shows an embodiment according to FIG. 12; evaluated circuit at a relatively high cost on FIG. 21 an embodiment of FIG. 2 with a diode Components. instead of the zener diode;