CH609518GA3 - - Google Patents

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Publication number
CH609518GA3
CH609518GA3 CH1824973A CH1824973A CH609518GA3 CH 609518G A3 CH609518G A3 CH 609518GA3 CH 1824973 A CH1824973 A CH 1824973A CH 1824973 A CH1824973 A CH 1824973A CH 609518G A3 CH609518G A3 CH 609518GA3
Authority
CH
Switzerland
Prior art keywords
integrated circuit
channel
insulation
electronic
enhance
Prior art date
Application number
CH1824973A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of CH609518GA3 publication Critical patent/CH609518GA3/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
    • G04F5/04—Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses
    • G04F5/06—Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses using piezoelectric resonators
    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G3/00—Producing timing pulses
    • G04G3/02—Circuits for deriving low frequency timing pulses from pulses of higher frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electric Clocks (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
CH1824973A 1972-12-29 1973-12-28 CH609518GA3 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000503A JPS4991279A (ja) 1972-12-29 1972-12-29

Publications (1)

Publication Number Publication Date
CH609518GA3 true CH609518GA3 (ja) 1979-03-15

Family

ID=11475550

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1824973A CH609518GA3 (ja) 1972-12-29 1973-12-28

Country Status (5)

Country Link
US (1) US3939642A (ja)
JP (1) JPS4991279A (ja)
CH (1) CH609518GA3 (ja)
DE (1) DE2365128C3 (ja)
GB (1) GB1450559A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986199A (en) * 1974-02-19 1976-10-12 Texas Instruments Incorporated Bipolar logic having graded power
JPS51101478A (ja) * 1975-03-04 1976-09-07 Suwa Seikosha Kk
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
US4141209A (en) * 1976-12-27 1979-02-27 Fairchild Camera And Instrument Corporation Crystal controlled oscillator and method of tuning same
JPS5473671A (en) * 1977-11-25 1979-06-13 Seiko Epson Corp Semiconductor integrated circuit for watch
US4395774A (en) * 1981-01-12 1983-07-26 National Semiconductor Corporation Low power CMOS frequency divider
JPS59201460A (ja) * 1983-04-30 1984-11-15 Sharp Corp Ｃｍｏｓ△ｆｅｔ集積回路の製造方法
WO1994015364A1 (en) * 1992-12-29 1994-07-07 Honeywell Inc. Depletable semiconductor on insulator low threshold complementary transistors
JP3646236B2 (ja) * 1997-01-16 2005-05-11 日本プレシジョン・サーキッツ株式会社 水晶発振回路及び水晶発振用集積回路装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577166A (en) * 1968-09-17 1971-05-04 Rca Corp C-mos dynamic binary counter
US3560998A (en) * 1968-10-16 1971-02-02 Hamilton Watch Co Electronically controlled timepiece using low power mos transistor circuitry
US3585527A (en) * 1969-10-27 1971-06-15 Suisse Pour L Ind Horlogere Sa Oscillator circuit including a quartz crystal operating in parallel resonance
US3672155A (en) * 1970-05-06 1972-06-27 Hamilton Watch Co Solid state watch
DE2110888A1 (de) * 1971-03-08 1972-09-14 Vdo Schindling Elektrische Uhr
US3715604A (en) * 1971-08-09 1973-02-06 Motorola Inc Integrated circuit frequency divider having low power consumption
US3757510A (en) * 1972-07-03 1973-09-11 Hughes Aircraft Co High frequency electronic watch with low power dissipation

Also Published As

Publication number Publication date
US3939642A (en) 1976-02-24
DE2365128C3 (de) 1981-07-16
JPS4991279A (ja) 1974-08-31
DE2365128B2 (de) 1980-09-18
GB1450559A (en) 1976-09-22
DE2365128A1 (de) 1974-07-11

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