CH569515A5 - - Google Patents

Info

Publication number
CH569515A5
CH569515A5 CH1213471A CH1213471A CH569515A5 CH 569515 A5 CH569515 A5 CH 569515A5 CH 1213471 A CH1213471 A CH 1213471A CH 1213471 A CH1213471 A CH 1213471A CH 569515 A5 CH569515 A5 CH 569515A5
Authority
CH
Switzerland
Application number
CH1213471A
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1213471A priority Critical patent/CH569515A5/xx
Priority to DE19712144018 priority patent/DE2144018A1/en
Publication of CH569515A5 publication Critical patent/CH569515A5/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
CH1213471A 1971-08-18 1971-08-18 CH569515A5 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CH1213471A CH569515A5 (en) 1971-08-18 1971-08-18
DE19712144018 DE2144018A1 (en) 1971-08-18 1971-09-02 Doping semiconductors with boron - by diffusion from chemically deposited metal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1213471A CH569515A5 (en) 1971-08-18 1971-08-18

Publications (1)

Publication Number Publication Date
CH569515A5 true CH569515A5 (en) 1975-11-28

Family

ID=4380201

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1213471A CH569515A5 (en) 1971-08-18 1971-08-18

Country Status (2)

Country Link
CH (1) CH569515A5 (en)
DE (1) DE2144018A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2395325A1 (en) * 1977-06-22 1979-01-19 Silec Semi Conducteurs Electroless nickel plating of silicon semiconductor substrate - in nickel bath contg. boron cpd. as reducing agent
DE102009011308A1 (en) * 2009-03-02 2010-09-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Apparatus and method for simultaneous microstructuring and doping of semiconductor substrates

Also Published As

Publication number Publication date
DE2144018A1 (en) 1973-08-02

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Legal Events

Date Code Title Description
PL Patent ceased