CH565455A5 - - Google Patents

Info

Publication number
CH565455A5
CH565455A5 CH513273A CH513273A CH565455A5 CH 565455 A5 CH565455 A5 CH 565455A5 CH 513273 A CH513273 A CH 513273A CH 513273 A CH513273 A CH 513273A CH 565455 A5 CH565455 A5 CH 565455A5
Authority
CH
Switzerland
Application number
CH513273A
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of CH565455A5 publication Critical patent/CH565455A5/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
CH513273A 1972-04-10 1973-04-10 CH565455A5 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00242534A US3818289A (en) 1972-04-10 1972-04-10 Semiconductor integrated circuit structures

Publications (1)

Publication Number Publication Date
CH565455A5 true CH565455A5 (OSRAM) 1975-08-15

Family

ID=22915159

Family Applications (1)

Application Number Title Priority Date Filing Date
CH513273A CH565455A5 (OSRAM) 1972-04-10 1973-04-10

Country Status (5)

Country Link
US (1) US3818289A (OSRAM)
JP (1) JPS5629385B2 (OSRAM)
CH (1) CH565455A5 (OSRAM)
DE (1) DE2317610A1 (OSRAM)
GB (1) GB1383893A (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187516A (en) * 1972-04-10 1980-02-05 Raytheon Company Semiconductor integrated circuits
US3979612A (en) * 1973-11-21 1976-09-07 Raytheon Company V-groove isolated integrated circuit memory with integral pinched resistors
US3947298A (en) * 1974-01-25 1976-03-30 Raytheon Company Method of forming junction regions utilizing R.F. sputtering
US3998673A (en) * 1974-08-16 1976-12-21 Pel Chow Method for forming electrically-isolated regions in integrated circuits utilizing selective epitaxial growth
US3982266A (en) * 1974-12-09 1976-09-21 Texas Instruments Incorporated Integrated injection logic having high inverse current gain
JPS6155587U (OSRAM) * 1984-09-19 1986-04-14
EP0195232B1 (en) * 1985-03-20 1991-12-11 Hitachi, Ltd. Piezoresistive strain sensing device
JPH0828421B2 (ja) * 1987-08-27 1996-03-21 株式会社東芝 半導体集積回路装置
JP3180599B2 (ja) * 1995-01-24 2001-06-25 日本電気株式会社 半導体装置およびその製造方法
EP2781269A1 (de) 2013-03-20 2014-09-24 Eurodrill GmbH Schwingungserreger, insbesondere für eine Baumaschine

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298196A (OSRAM) * 1962-09-22
US3254277A (en) * 1963-02-27 1966-05-31 United Aircraft Corp Integrated circuit with component defining groove
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
US3659160A (en) * 1970-02-13 1972-04-25 Texas Instruments Inc Integrated circuit process utilizing orientation dependent silicon etch
FR2096669B1 (OSRAM) * 1970-05-19 1974-03-01 Gen Electric
US3631309A (en) * 1970-07-23 1971-12-28 Semiconductor Elect Memories Integrated circuit bipolar memory cell
US3716425A (en) * 1970-08-24 1973-02-13 Motorola Inc Method of making semiconductor devices through overlapping diffusions
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Also Published As

Publication number Publication date
DE2317610A1 (de) 1973-10-31
US3818289A (en) 1974-06-18
GB1383893A (en) 1974-02-12
JPS4918280A (OSRAM) 1974-02-18
JPS5629385B2 (OSRAM) 1981-07-08

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Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased