CH551718A - Integriertes daempfungsglied sowie verfahren zum betrieb dieses daempfungsgliedes. - Google Patents

Integriertes daempfungsglied sowie verfahren zum betrieb dieses daempfungsgliedes.

Info

Publication number
CH551718A
CH551718A CH1708372A CH1708372A CH551718A CH 551718 A CH551718 A CH 551718A CH 1708372 A CH1708372 A CH 1708372A CH 1708372 A CH1708372 A CH 1708372A CH 551718 A CH551718 A CH 551718A
Authority
CH
Switzerland
Prior art keywords
attenuator
operating
integrated
integrated attenuator
Prior art date
Application number
CH1708372A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH551718A publication Critical patent/CH551718A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Bipolar Transistors (AREA)
CH1708372A 1972-01-24 1972-11-23 Integriertes daempfungsglied sowie verfahren zum betrieb dieses daempfungsgliedes. CH551718A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2203209A DE2203209C3 (de) 1972-01-24 1972-01-24 Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb

Publications (1)

Publication Number Publication Date
CH551718A true CH551718A (de) 1974-07-15

Family

ID=5833847

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1708372A CH551718A (de) 1972-01-24 1972-11-23 Integriertes daempfungsglied sowie verfahren zum betrieb dieses daempfungsgliedes.

Country Status (10)

Country Link
US (1) US3870976A (xx)
JP (1) JPS5646265B2 (xx)
CA (1) CA972072A (xx)
CH (1) CH551718A (xx)
DE (1) DE2203209C3 (xx)
FR (1) FR2169582A5 (xx)
GB (1) GB1389350A (xx)
IT (1) IT971901B (xx)
NL (1) NL7216374A (xx)
SE (2) SE388090B (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359699A (en) * 1981-03-25 1982-11-16 Martin Marietta Corporation PIN Diode attenuator exhibiting reduced phase shift and capable of fast switching times
JPS62134253U (xx) * 1986-02-14 1987-08-24
US4947142A (en) * 1987-12-23 1990-08-07 Reza Tayrani Attenuation controlling by means of a monolithic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070711A (en) * 1958-12-16 1962-12-25 Rca Corp Shift register
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
US3432778A (en) * 1966-12-23 1969-03-11 Texas Instruments Inc Solid state microstripline attenuator
US3579059A (en) * 1968-03-11 1971-05-18 Nat Semiconductor Corp Multiple collector lateral transistor device

Also Published As

Publication number Publication date
GB1389350A (en) 1975-04-03
SE388090B (sv) 1976-09-20
IT971901B (it) 1974-05-10
DE2203209C3 (de) 1980-01-31
JPS4886487A (xx) 1973-11-15
SE402683B (sv) 1978-07-10
DE2203209A1 (de) 1973-07-26
NL7216374A (xx) 1973-07-26
DE2203209B2 (de) 1979-05-23
FR2169582A5 (xx) 1973-09-07
JPS5646265B2 (xx) 1981-10-31
SE7512843L (sv) 1975-11-14
CA972072A (en) 1975-07-29
US3870976A (en) 1975-03-11

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Legal Events

Date Code Title Description
PL Patent ceased