CH501294A - Matrice de "points-mémoire" pour dispositif de lecture-écriture - Google Patents

Matrice de "points-mémoire" pour dispositif de lecture-écriture

Info

Publication number
CH501294A
CH501294A CH1929568A CH1929568A CH501294A CH 501294 A CH501294 A CH 501294A CH 1929568 A CH1929568 A CH 1929568A CH 1929568 A CH1929568 A CH 1929568A CH 501294 A CH501294 A CH 501294A
Authority
CH
Switzerland
Prior art keywords
matrix
read
write device
memory points
points
Prior art date
Application number
CH1929568A
Other languages
English (en)
Inventor
Haure-Touze Marc
Khimeche Abdelcader
Original Assignee
Comp Generale Electricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comp Generale Electricite filed Critical Comp Generale Electricite
Publication of CH501294A publication Critical patent/CH501294A/fr

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
CH1929568A 1968-01-05 1968-12-27 Matrice de "points-mémoire" pour dispositif de lecture-écriture CH501294A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR135098 1968-01-05

Publications (1)

Publication Number Publication Date
CH501294A true CH501294A (fr) 1970-12-31

Family

ID=8644217

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1929568A CH501294A (fr) 1968-01-05 1968-12-27 Matrice de "points-mémoire" pour dispositif de lecture-écriture

Country Status (7)

Country Link
US (1) US3594737A (fr)
BE (1) BE725629A (fr)
CH (1) CH501294A (fr)
DE (1) DE1900267A1 (fr)
FR (1) FR1561232A (fr)
GB (1) GB1211524A (fr)
NL (1) NL6900185A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112438A (ja) * 1992-09-25 1994-04-22 Fujitsu Ltd 記憶装置、その情報読出し方法、情報書込み方法および記憶装置の製造方法
US7381981B2 (en) * 2005-07-29 2008-06-03 International Business Machines Corporation Phase-change TaN resistor based triple-state/multi-state read only memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3221180A (en) * 1960-09-12 1965-11-30 Rca Corp Memory circuits employing negative resistance elements
US3107345A (en) * 1960-10-05 1963-10-15 Ibm Esaki diode memory with diode coupled readout
US3119985A (en) * 1961-01-03 1964-01-28 Rca Corp Tunnel diode switch circuits for memories
GB1001908A (en) * 1962-08-31 1965-08-18 Texas Instruments Inc Semiconductor devices

Also Published As

Publication number Publication date
FR1561232A (fr) 1969-03-28
BE725629A (fr) 1969-06-18
DE1900267A1 (de) 1969-09-04
US3594737A (en) 1971-07-20
GB1211524A (en) 1970-11-11
NL6900185A (fr) 1969-07-08

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Legal Events

Date Code Title Description
PL Patent ceased