CH487508A - Circuit électrique de protection d'un transistor à effet de champ - Google Patents

Circuit électrique de protection d'un transistor à effet de champ

Info

Publication number
CH487508A
CH487508A CH1603468A CH1603468A CH487508A CH 487508 A CH487508 A CH 487508A CH 1603468 A CH1603468 A CH 1603468A CH 1603468 A CH1603468 A CH 1603468A CH 487508 A CH487508 A CH 487508A
Authority
CH
Switzerland
Prior art keywords
protecting
field effect
effect transistor
electrical circuit
electrical
Prior art date
Application number
CH1603468A
Other languages
English (en)
Inventor
Paul Renz Robert
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr Co filed Critical Ncr Co
Publication of CH487508A publication Critical patent/CH487508A/fr

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers
    • H03F1/523Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CH1603468A 1967-11-02 1968-10-24 Circuit électrique de protection d'un transistor à effet de champ CH487508A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68010067A 1967-11-02 1967-11-02

Publications (1)

Publication Number Publication Date
CH487508A true CH487508A (fr) 1970-03-15

Family

ID=24729680

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1603468A CH487508A (fr) 1967-11-02 1968-10-24 Circuit électrique de protection d'un transistor à effet de champ

Country Status (6)

Country Link
BE (1) BE722730A (fr)
BR (1) BR6803425D0 (fr)
CH (1) CH487508A (fr)
DE (1) DE1805843B2 (fr)
FR (1) FR1593099A (fr)
GB (1) GB1179388A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636385A (en) * 1970-02-13 1972-01-18 Ncr Co Protection circuit
DE2531846C2 (de) * 1974-07-16 1989-12-14 Nippon Electric Co., Ltd., Tokyo Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
IT1150062B (it) * 1980-11-19 1986-12-10 Ates Componenti Elettron Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
NL8100347A (nl) * 1981-01-26 1982-08-16 Philips Nv Halfgeleiderinrichting met een beveiligingsinrichting.
DE3123628A1 (de) * 1981-06-15 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Einrichtung zur umkristallisation duenner oberflaechenschichten oder duenner, auf substraten aufgebrachter schichten mittels eines elektronenmissionssystems

Also Published As

Publication number Publication date
DE1805843A1 (de) 1969-10-23
GB1179388A (en) 1970-01-28
BR6803425D0 (pt) 1973-01-04
BE722730A (fr) 1969-04-01
DE1805843B2 (de) 1972-10-12
FR1593099A (fr) 1970-05-25

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Legal Events

Date Code Title Description
PL Patent ceased