CH484520A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
CH484520A
CH484520A CH1477467A CH1477467A CH484520A CH 484520 A CH484520 A CH 484520A CH 1477467 A CH1477467 A CH 1477467A CH 1477467 A CH1477467 A CH 1477467A CH 484520 A CH484520 A CH 484520A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH1477467A
Other languages
German (de)
Inventor
Joseph Edlinger Wolfgang Franz
Peter Morgan Leonard
Gilbert Smith James
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH484520A publication Critical patent/CH484520A/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CH1477467A 1966-10-24 1967-10-23 Semiconductor device CH484520A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB47536/66A GB1207961A (en) 1966-10-24 1966-10-24 Improvements in and relating to transistors

Publications (1)

Publication Number Publication Date
CH484520A true CH484520A (en) 1970-01-15

Family

ID=10445332

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1477467A CH484520A (en) 1966-10-24 1967-10-23 Semiconductor device

Country Status (6)

Country Link
BE (1) BE705523A (en)
CH (1) CH484520A (en)
DE (1) DE1614288A1 (en)
GB (1) GB1207961A (en)
NL (1) NL6714339A (en)
SE (1) SE319240B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035670A (en) * 1975-12-24 1977-07-12 California Linear Circuits, Inc. Transistor stored charge control using a recombination layer diode

Also Published As

Publication number Publication date
SE319240B (en) 1970-01-12
NL6714339A (en) 1968-04-25
DE1614288A1 (en) 1970-08-20
GB1207961A (en) 1970-10-07
BE705523A (en) 1968-04-23

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Legal Events

Date Code Title Description
PL Patent ceased