CH478459A - Thyristor - Google Patents

Thyristor

Info

Publication number
CH478459A
CH478459A CH1481267A CH1481267A CH478459A CH 478459 A CH478459 A CH 478459A CH 1481267 A CH1481267 A CH 1481267A CH 1481267 A CH1481267 A CH 1481267A CH 478459 A CH478459 A CH 478459A
Authority
CH
Switzerland
Prior art keywords
thyristor
Prior art date
Application number
CH1481267A
Other languages
German (de)
English (en)
Inventor
Svedberg Per
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Publication of CH478459A publication Critical patent/CH478459A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
CH1481267A 1966-10-25 1967-10-21 Thyristor CH478459A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1460666A SE335389B (en:Method) 1966-10-25 1966-10-25

Publications (1)

Publication Number Publication Date
CH478459A true CH478459A (de) 1969-09-15

Family

ID=20299378

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1481267A CH478459A (de) 1966-10-25 1967-10-21 Thyristor

Country Status (6)

Country Link
US (1) US3566211A (en:Method)
CH (1) CH478459A (en:Method)
DE (1) DE1589478A1 (en:Method)
GB (1) GB1193096A (en:Method)
NL (1) NL6714497A (en:Method)
SE (1) SE335389B (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2349216A1 (fr) * 1976-04-19 1977-11-18 Gen Electric Dispositif semi-conducteur auto-protege

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH460957A (de) * 1967-08-03 1968-08-15 Bbc Brown Boveri & Cie Schaltungsanordnung mit mehreren Halbleiterelementen
US3978513A (en) * 1971-05-21 1976-08-31 Hitachi, Ltd. Semiconductor controlled rectifying device
BE787241A (fr) * 1971-08-06 1973-02-05 Siemens Ag Thyristor
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
JPS4936290A (en:Method) * 1972-03-02 1974-04-04
JPS541437B2 (en:Method) * 1973-04-18 1979-01-24
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
GB1499203A (en) * 1975-02-04 1978-01-25 Standard Telephones Cables Ltd Thyristor structure to facilitate zero point switching
JPS5927108B2 (ja) * 1975-02-07 1984-07-03 株式会社日立製作所 半導体制御整流装置
DE2730612C2 (de) * 1977-07-07 1982-02-04 Brown, Boveri & Cie Ag, 6800 Mannheim Betriebsschaltung für einen Thyristor
GB2036429B (en) * 1978-03-23 1982-09-15 Bbc Brown Boveri & Cie Semiconductor device comprising at least two semiconductor elements
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
PL2819174T3 (pl) * 2013-06-24 2017-03-31 Silergy Corp. Tyrystor, metoda wyzwalania tyrystora i obwody tyrystorowe

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2349216A1 (fr) * 1976-04-19 1977-11-18 Gen Electric Dispositif semi-conducteur auto-protege

Also Published As

Publication number Publication date
GB1193096A (en) 1970-05-28
DE1589478A1 (de) 1970-04-09
SE335389B (en:Method) 1971-05-24
US3566211A (en) 1971-02-23
NL6714497A (en:Method) 1968-04-26

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Legal Events

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