CH462338A - Arrangement with a light-sensitive semiconductor component and method for producing such an arrangement - Google Patents

Arrangement with a light-sensitive semiconductor component and method for producing such an arrangement

Info

Publication number
CH462338A
CH462338A CH650367A CH650367A CH462338A CH 462338 A CH462338 A CH 462338A CH 650367 A CH650367 A CH 650367A CH 650367 A CH650367 A CH 650367A CH 462338 A CH462338 A CH 462338A
Authority
CH
Switzerland
Prior art keywords
arrangement
producing
light
semiconductor component
sensitive semiconductor
Prior art date
Application number
CH650367A
Other languages
German (de)
Inventor
Zerbst Manfred Dr Dipl-Phys
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH462338A publication Critical patent/CH462338A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
CH650367A 1966-05-10 1967-05-09 Arrangement with a light-sensitive semiconductor component and method for producing such an arrangement CH462338A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1966S0103725 DE1299087B (en) 1966-05-10 1966-05-10 Field effect phototransistor

Publications (1)

Publication Number Publication Date
CH462338A true CH462338A (en) 1968-09-15

Family

ID=7525384

Family Applications (1)

Application Number Title Priority Date Filing Date
CH650367A CH462338A (en) 1966-05-10 1967-05-09 Arrangement with a light-sensitive semiconductor component and method for producing such an arrangement

Country Status (6)

Country Link
AT (1) AT270766B (en)
CH (1) CH462338A (en)
DE (1) DE1299087B (en)
GB (1) GB1167063A (en)
NL (1) NL6703297A (en)
SE (1) SE329449B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2903587A1 (en) * 1979-01-31 1980-08-07 Telefonbau & Normalzeit Gmbh Prodn. of opto-coupler formed by LED and phototransistor - uses separate securing of diode and transistor, involving grooved metallised multilayer board for diode and flat board for transistor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642148B2 (en) * 1975-01-24 1981-10-02
US4394572A (en) * 1981-04-01 1983-07-19 Biox Technology, Inc. Photodetector having an electrically conductive, selectively transmissive window
JPH0691296B2 (en) * 1987-03-31 1994-11-14 三菱電機株式会社 Assembling method of semiconductor laser
DE69636016T2 (en) * 1995-01-23 2006-11-09 National Institute Of Advanced Industrial Science And Technology, Independent Administrative Institution Verharen to produce a light receiving device
DE102004024368A1 (en) * 2004-05-17 2005-12-15 Rohde & Schwarz Gmbh & Co. Kg Illuminable GaAs switching device with transparent housing and microwave circuit hereby
FR2930084B1 (en) 2008-04-09 2012-06-08 Thales Sa METHOD FOR MANAGING AN ELECTRICAL NETWORK

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
NL6407445A (en) * 1964-07-01 1966-01-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2903587A1 (en) * 1979-01-31 1980-08-07 Telefonbau & Normalzeit Gmbh Prodn. of opto-coupler formed by LED and phototransistor - uses separate securing of diode and transistor, involving grooved metallised multilayer board for diode and flat board for transistor

Also Published As

Publication number Publication date
NL6703297A (en) 1967-11-13
SE329449B (en) 1970-10-12
DE1299087B (en) 1969-07-10
AT270766B (en) 1969-05-12
GB1167063A (en) 1969-10-15

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