CH418468A - Peak diode - Google Patents

Peak diode

Info

Publication number
CH418468A
CH418468A CH657064A CH657064A CH418468A CH 418468 A CH418468 A CH 418468A CH 657064 A CH657064 A CH 657064A CH 657064 A CH657064 A CH 657064A CH 418468 A CH418468 A CH 418468A
Authority
CH
Switzerland
Prior art keywords
peak diode
diode
peak
Prior art date
Application number
CH657064A
Other languages
German (de)
Inventor
Arthur Dr Gaudlitz
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH418468A publication Critical patent/CH418468A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrotherapy Devices (AREA)
CH657064A 1963-08-28 1964-05-20 Peak diode CH418468A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1963S0086953 DE1264618C2 (en) 1963-08-28 1963-08-28 TIP DIODE WITH A SPRING MOLYBDAEN OR TUNGSTEN WIRE AND PROCESS FOR THEIR PRODUCTION

Publications (1)

Publication Number Publication Date
CH418468A true CH418468A (en) 1966-08-15

Family

ID=7513397

Family Applications (1)

Application Number Title Priority Date Filing Date
CH657064A CH418468A (en) 1963-08-28 1964-05-20 Peak diode

Country Status (6)

Country Link
US (1) US3355638A (en)
CH (1) CH418468A (en)
DE (1) DE1264618C2 (en)
FR (1) FR1405133A (en)
GB (1) GB1035714A (en)
NL (1) NL6409290A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975756A (en) * 1974-06-28 1976-08-17 The United States Of America As Represented By The Secretary Of The Army Gadolinium doped germanium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1104073A (en) * 1911-06-21 1914-07-21 Wireless Specialty Apparatus Company Detector for wireless telegraphy and telephony.
US2402839A (en) * 1941-03-27 1946-06-25 Bell Telephone Labor Inc Electrical translating device utilizing silicon
US2429222A (en) * 1943-06-05 1947-10-21 Bell Telephone Labor Inc Method of making contact wires
US2818536A (en) * 1952-08-23 1957-12-31 Hughes Aircraft Co Point contact semiconductor devices and methods of making same
US2876400A (en) * 1953-02-27 1959-03-03 Siemens Ag Composite electrodes for directional crystal devices
US2820135A (en) * 1956-09-05 1958-01-14 Pacific Semiconductors Inc Method for producing electrical contact to semiconductor devices
US2984890A (en) * 1956-12-24 1961-05-23 Gahagan Inc Crystal diode rectifier and method of making same
US3254279A (en) * 1963-04-17 1966-05-31 Cohn James Composite alloy electric contact element

Also Published As

Publication number Publication date
NL6409290A (en) 1965-03-01
GB1035714A (en) 1966-07-13
DE1264618C2 (en) 1977-06-02
US3355638A (en) 1967-11-28
DE1264618B (en) 1968-03-28
FR1405133A (en) 1965-07-02

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