CH410010A - Verfahren zur Herstellung von reinstem Galliumphosphid bzw. Galliumarsenid - Google Patents

Verfahren zur Herstellung von reinstem Galliumphosphid bzw. Galliumarsenid

Info

Publication number
CH410010A
CH410010A CH1379660A CH1379660A CH410010A CH 410010 A CH410010 A CH 410010A CH 1379660 A CH1379660 A CH 1379660A CH 1379660 A CH1379660 A CH 1379660A CH 410010 A CH410010 A CH 410010A
Authority
CH
Switzerland
Prior art keywords
gallium
purest
production
phosphide
gallium arsenide
Prior art date
Application number
CH1379660A
Other languages
German (de)
English (en)
Inventor
Plust Heinz-Guenther Dipl-Ing
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1310155D priority Critical patent/FR1310155A/fr
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1379660A priority patent/CH410010A/de
Priority to DEA36399A priority patent/DE1130421B/de
Publication of CH410010A publication Critical patent/CH410010A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1379660A 1960-12-09 1960-12-09 Verfahren zur Herstellung von reinstem Galliumphosphid bzw. Galliumarsenid CH410010A (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1310155D FR1310155A (en)) 1960-12-09
CH1379660A CH410010A (de) 1960-12-09 1960-12-09 Verfahren zur Herstellung von reinstem Galliumphosphid bzw. Galliumarsenid
DEA36399A DE1130421B (de) 1960-12-09 1960-12-30 Verfahren zur Herstellung von reinstem Galliumphosphid bzw. Galliumarsenid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1379660A CH410010A (de) 1960-12-09 1960-12-09 Verfahren zur Herstellung von reinstem Galliumphosphid bzw. Galliumarsenid

Publications (1)

Publication Number Publication Date
CH410010A true CH410010A (de) 1966-03-31

Family

ID=4395401

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1379660A CH410010A (de) 1960-12-09 1960-12-09 Verfahren zur Herstellung von reinstem Galliumphosphid bzw. Galliumarsenid

Country Status (3)

Country Link
CH (1) CH410010A (en))
DE (1) DE1130421B (en))
FR (1) FR1310155A (en))

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1176102B (de) * 1962-09-25 1964-08-20 Siemens Ag Verfahren zum tiegelfreien Herstellen von Galliumarsenidstaeben aus Galliumalkylen und Arsenverbindungen bei niedrigen Temperaturen
US3305385A (en) * 1963-06-27 1967-02-21 Hughes Aircraft Co Method for the preparation of gallium phosphide

Also Published As

Publication number Publication date
DE1130421B (de) 1962-05-30
FR1310155A (en)) 1963-03-06

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